JP2007103656A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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JP2007103656A
JP2007103656A JP2005291248A JP2005291248A JP2007103656A JP 2007103656 A JP2007103656 A JP 2007103656A JP 2005291248 A JP2005291248 A JP 2005291248A JP 2005291248 A JP2005291248 A JP 2005291248A JP 2007103656 A JP2007103656 A JP 2007103656A
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layer
semiconductor device
wiring
film
shock absorbing
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JP4645398B2 (en
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Hiroyasu Ito
伊藤　　裕康
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Denso Corp
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Denso Corp
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  • Engineering & Computer Science (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of connecting a bonding wire directly to a bonding pad on an active circuit by employing fail-safe structure, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device is constituted of an active circuit 1 connected by a first wiring 2 and covered by an interlayer insulating layer 3, a second wiring 5 connected through a first connecting hole 4 so that the active circuit 1 functions, impact absorbing beams 6 having a plurality of openings and provided in a bonding connection region, a thick electrode 9 covered by a protective film 7 and electrically connected to the active circuit 1 through second connecting holes 8 while being provided so as to be positioned on the impact absorbing beams 6, and a protective resin layer 10 opened above the impact absorbing beams 6 to effect bonding connection to the thick electrode 9. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、一般的には集積回路半導体装置におけるワイヤボンディング接続に関し、特に、前記半導体装置の能動回路領域上でのワイヤボンディング接続を可能とする前記能動回路領域上に配置されたボンディングパッドおよびその製造方法に関する。   The present invention generally relates to wire bonding connection in an integrated circuit semiconductor device, and more particularly, to a bonding pad disposed on the active circuit region that enables wire bonding connection on the active circuit region of the semiconductor device, and the same It relates to a manufacturing method.

通常の集積回路半導体装置は、能動回路領域の周辺部に配置されたボンディングパッドを有する。これらのボンディングパッドは、ボールボンディング接続またはスティッチボンディング接続のいずれかを可能とするように十分な大きさでなければならない。従ってボンディングパッドのため半導体装置が大きくなるという問題があった。   A typical integrated circuit semiconductor device has a bonding pad arranged at the periphery of an active circuit region. These bonding pads must be large enough to allow either a ball bonding connection or a stitch bonding connection. Therefore, there is a problem that the semiconductor device becomes large due to the bonding pad.

（第１の従来技術）
このボンディングパッドのため半導体装置が大きくなるという問題を改善するために、図３７に示す特許文献１に開示された技術が提案されている。この特許文献１のものによれば、能動回路上にポリイミド層を介してボンディングパッドを形成するとともに接続孔によりボンディングパッドと能動回路とを電気的に接続した後、ボンディングパッドにワイヤをボンディングするというものであり、この結果として、能動回路領域の周辺部に配置されたボンディングパッドを削減できるというものである。 (First prior art)
In order to improve the problem that the semiconductor device becomes large due to the bonding pad, a technique disclosed in Patent Document 1 shown in FIG. 37 has been proposed. According to this patent document 1, a bonding pad is formed on an active circuit via a polyimide layer, and after the bonding pad and the active circuit are electrically connected by a connection hole, a wire is bonded to the bonding pad. As a result, the number of bonding pads arranged in the peripheral portion of the active circuit region can be reduced.

上記した特許文献１に示す能動回路上ボンディングパッドでは、ワイヤをボンディングする際のボンディング衝撃をボンディングパッド下層のポリイミド層により吸収・緩和する構造であるが、図３７に示すようにボンディングパッドと下部の能動回路とを電気的に接続する接続部にもボンディング衝撃が作用し、この接続部での接続不良が発生するという問題があった。   The above-mentioned bonding pad on the active circuit shown in Patent Document 1 has a structure in which a bonding impact when bonding a wire is absorbed and alleviated by a polyimide layer below the bonding pad. However, as shown in FIG. There is a problem in that bonding impact also acts on a connection portion that electrically connects the active circuit, and a connection failure occurs at this connection portion.

（第２の従来技術）
ボンディングパッドのため半導体装置が大きくなるという基本的な問題の改善に加え、ボンディング衝撃によりボンディングパッドと能動回路との接続部での接続不良が発生するという特許文献１の不具合を改善するために、図３８に示すような特許文献２に開示された技術が提案されている。 (Second prior art)
In addition to improving the basic problem that the semiconductor device becomes large due to the bonding pad, in order to improve the defect of Patent Document 1 in which a connection failure occurs at the connection portion between the bonding pad and the active circuit due to bonding impact, A technique disclosed in Patent Document 2 as shown in FIG. 38 has been proposed.

この特許文献２の技術によれば、能動回路上に実質的に中断箇所を持たない無機材料からなるパシベーション材料層を形成した後、能動回路上にボンディングパッドを形成し、ワイヤをボンディングする領域から離れた箇所に形成された接続孔を介して能動回路とボンディングパッドとを電気的に接続するというものである。   According to the technique of this patent document 2, after forming a passivation material layer made of an inorganic material having substantially no interruption point on an active circuit, a bonding pad is formed on the active circuit, and a wire is bonded from the region. The active circuit and the bonding pad are electrically connected through a connection hole formed at a remote location.

この特許文献２の技術による能動回路上ボンディングパッドでは、能動回路との接続孔はボンディング領域から離れておりボンディングパッドの一部を延長した接続配線により能動回路と接続するためボンディング衝撃により接続部での接続不良が発生するという問題は改善できる。   In the bonding pad on the active circuit according to the technique of this patent document 2, the connection hole with the active circuit is separated from the bonding region and is connected to the active circuit by the connection wiring obtained by extending a part of the bonding pad. The problem of poor connection can be improved.

しかし、ボンディングパッドおよび接続配線ともに露出した構造となるため特許文献２の半導体装置をモールド樹脂により実装した場合、前記接続部を含む接続配線の耐環境信頼性において問題があった。   However, since both the bonding pad and the connection wiring are exposed, there is a problem in the environmental reliability of the connection wiring including the connection portion when the semiconductor device of Patent Document 2 is mounted using a mold resin.

加えて、ボンディング衝撃を金属材料からなるボンディングパッドと無機材料からなるパシベーション材料層とで吸収・緩和する構造であるため、能動回路の配線段差が大きく急峻な場合にはボンディング衝撃によりパシベーション材料層にクラックが発生する。   In addition, since the bonding shock is absorbed and relaxed by a bonding pad made of a metal material and a passivation material layer made of an inorganic material, if the wiring step of the active circuit is large and steep, the bonding shock causes the passivation material layer to Cracks occur.

また、半導体装置の使用時の環境温度変化が大きい場合、ボンディング衝撃により発生したクラックが伸展しボンディングパッドと能動回路の配線が短絡するという問題点があった。加えて、ボンディング衝撃によるパシベーション材料層のクラックに起因する経時劣化現象が検出できないという問題点があった。
特開平６−２０４２７７号公報 特表２００２−５３２８８２号公報 Further, when the environmental temperature change during use of the semiconductor device is large, there is a problem that a crack generated by a bonding impact is extended and the bonding pad and the active circuit wiring are short-circuited. In addition, there is a problem that the deterioration with time due to cracks in the passivation material layer due to bonding impact cannot be detected.
JP-A-6-204277 Japanese translation of PCT publication No. 2002-532882

ボンディングパッドのため半導体装置が大きくなるという問題を改善する能動回路上ボンディングパッドにおいて、能動回路とボンディングパッドと電気的に接続する接続孔にボンディング衝撃が作用する場合にはボンディング衝撃により接合部に不良が発生するという問題がある。   The bonding pad on the active circuit improves the problem that the semiconductor device becomes large due to the bonding pad. If a bonding impact acts on the connection hole electrically connected to the active circuit and the bonding pad, the bonding impact is defective due to the bonding impact. There is a problem that occurs.

また、接続孔をボンディング領域から離して形成しボンディングパッドの一部を延長した接続配線で接続する構造においてボンディングパッドとともに接続配線が露出する構造の場合には耐環境信頼性が劣化するという問題がある。   In addition, in the structure in which the connection hole is formed away from the bonding region and the connection wiring is connected with the bonding pad extended, there is a problem that the environmental reliability is deteriorated in the structure in which the connection wiring is exposed together with the bonding pad. is there.

加えて、配線段差が大きく急峻な能動回路上に無機材料による絶縁層を介してボンディングパッドを形成した構造ではボンディング衝撃により前記絶縁層にクラックが発生し初期不良もしくは信頼性不良が発生するという問題点がある。   In addition, in a structure in which a bonding pad is formed on an active circuit with a large wiring step via an insulating layer made of an inorganic material, a crack is generated in the insulating layer due to bonding impact, resulting in an initial failure or a reliability failure. There is a point.

本発明は、ボンディング衝撃による能動回路とボンディングパッドとの接合部不良および能動回路とボンディングパッドとの間の絶縁層不良の発生を抑止するとともに、ボンディング衝撃に対しフェールセーフ的な構造でありボンディング衝撃に起因する不良を検出可能とした能動回路上ボンディングパッドを有する半導体装置およびその製造方法を提供するものである。   The present invention suppresses the occurrence of defective bonding between the active circuit and the bonding pad due to the bonding impact and the failure of the insulating layer between the active circuit and the bonding pad, and has a fail-safe structure against the bonding shock. The present invention provides a semiconductor device having a bonding pad on an active circuit that can detect a defect caused by the above-described problem and a method for manufacturing the same.

本発明による半導体装置においては、半導体装置の能動回路上に絶縁膜を介して平面構造において複数の開口を持つ衝撃吸収梁を形成し、能動回路を保護する保護膜を介して衝撃吸収梁上に保護膜に設けた接続孔により能動回路と接続された厚い電極を形成し、厚い電極にボンディング接続時に必要な領域のみ開口した保護樹脂層で半導体装置を被覆する構造であり、前記衝撃吸収梁を被覆する保護膜の表面段差以上に前記の厚い電極の厚さを設定することにより、ボンディング面方向の超音波振動に起因するボンディング衝撃を主として厚い電極で吸収・緩和することが可能となるとともに、下層へ伝播した衝撃により前記保護膜にクラックが発生した場合においても前記衝撃吸収梁によりその後のクラックの伸展を抑止することができ能動回路との短絡が発生しないフェールセーフ構造である。   In the semiconductor device according to the present invention, an impact absorbing beam having a plurality of openings in a planar structure is formed on an active circuit of the semiconductor device via an insulating film, and is formed on the impact absorbing beam via a protective film that protects the active circuit. A thick electrode connected to the active circuit is formed by a connection hole provided in the protective film, and the semiconductor device is covered with a protective resin layer that is opened only in a necessary region at the time of bonding connection to the thick electrode. By setting the thickness of the thick electrode above the surface step of the protective film to be coated, it becomes possible to absorb and mitigate the bonding impact caused by the ultrasonic vibration in the bonding surface direction mainly with the thick electrode, Even when a crack is generated in the protective film due to an impact propagated to the lower layer, the impact absorbing beam can suppress subsequent crack extension. It is a fail-safe structure in which short-circuiting between the circuit does not occur.

また前記衝撃吸収梁に形成する開口部の平面形状を円形もしくは多角形にすることにより、ボンディング衝撃に対する指向性を無くすことができ能動回路上でのボンディングパッドの配置位置自由度を向上できる。   In addition, by making the planar shape of the opening formed in the shock absorbing beam circular or polygonal, directivity with respect to bonding impact can be eliminated and the bonding pad layout position freedom on the active circuit can be improved.

加えてボンディング接続に必要な領域のみ開口した保護樹脂層で半導体装置を被覆する構造であるため、実装後の半導体装置においてボンディングパッドと能動回路を接続する接続配線に起因する耐環境信頼性の劣化現象を抑止できる。   In addition, since the semiconductor device is covered with a protective resin layer that is opened only in the area necessary for bonding connection, degradation of environmental reliability due to connection wiring connecting the bonding pad and active circuit in the mounted semiconductor device The phenomenon can be suppressed.

本発明の別の半導体装置においては、半導体装置の能動回路上に絶縁膜を介して平面構造において複数の開口を持つ衝撃吸収梁を形成し、能動回路を保護する保護膜を介して衝撃吸収梁上に厚いパッド電極を形成し、厚いパッド電極を被服しその一部を延長し保護膜に設けた接続孔により能動回路と接続するよう被覆金属配線層を形成し、厚いパッド電極へのボンディング接続時に必要な領域のみ開口した保護樹脂層で半導体装置を被覆する構造である。   In another semiconductor device of the present invention, an impact absorbing beam having a plurality of openings in a planar structure is formed on an active circuit of the semiconductor device via an insulating film, and the impact absorbing beam is protected via a protective film that protects the active circuit. A thick pad electrode is formed on top, a thick pad electrode is coated, a part of it is extended, and a covering metal wiring layer is formed to connect to the active circuit through a connection hole provided in the protective film, and bonding connection to the thick pad electrode In some cases, the semiconductor device is covered with a protective resin layer that is opened only in necessary regions.

厚いパッド電極を被覆金属配線層より機械的強度の高い金属材料で形成するとともにその厚さを前記衝撃吸収梁上に形成した前記保護膜の表面段差以上に設定することにより、ボンディング面方向の超音波振動に起因するボンディング衝撃を主として前記被覆金属配線層を変形させることで吸収・緩和するとともに、下層へ伝播するボンディング衝撃を機械的強度の高い厚いパッド電極で分散することによりボンディング衝撃による能動回路への影響を従来構造より低減できる。   By forming the thick pad electrode with a metal material having a mechanical strength higher than that of the coated metal wiring layer and setting the thickness to be equal to or greater than the surface step of the protective film formed on the shock absorbing beam, it is possible to Absorbing and mitigating bonding impact caused by sonic vibration mainly by deforming the coated metal wiring layer, and dispersing the bonding impact propagating to the lower layer with thick pad electrodes with high mechanical strength, thereby active circuit due to bonding impact Can be reduced compared to the conventional structure.

加えて、ボンディング衝撃により前記保護膜にクラックが発生した場合においても前記衝撃吸収梁によりクラックの伸展を抑止し能動回路との短絡を発生させないフェールセーフ構造である。   In addition, even when a crack is generated in the protective film due to a bonding impact, the fail-absorbing structure prevents the extension of the crack by the impact absorbing beam and does not cause a short circuit with the active circuit.

また、前記衝撃吸収梁に形成する開口部の平面形状を円形もしくは多角形にすることにより、ボンディング衝撃に対する指向性を無くすことができ能動回路上でのボンディングパッドの配置位置自由度を向上できる。   In addition, by making the planar shape of the opening formed in the shock absorbing beam circular or polygonal, directivity with respect to bonding impact can be eliminated, and the freedom of arrangement position of the bonding pad on the active circuit can be improved.

更に、前記厚いパッドと能動回路との接続部は保護樹脂層で保護されているため実装後の耐環境信頼性の劣化を抑止できる。   Furthermore, since the connection portion between the thick pad and the active circuit is protected by a protective resin layer, it is possible to suppress degradation of environmental resistance reliability after mounting.

また本発明の更に別の半導体装置においては、半導体装置の能動回路上に絶縁膜を介して平面構造において複数の開口を持つ衝撃吸収梁を形成し、能動回路を保護する保護膜を形成したのち衝撃吸収梁の近傍に接続孔を形成し、衝撃吸収梁と接続孔を被覆するよう厚いパッド電極を形成し厚いパッド電極と能動回路とを電気的に接続する。   In still another semiconductor device of the present invention, an impact absorbing beam having a plurality of openings in a planar structure is formed on an active circuit of the semiconductor device via an insulating film, and a protective film for protecting the active circuit is formed. A connection hole is formed in the vicinity of the shock absorbing beam, a thick pad electrode is formed so as to cover the shock absorbing beam and the connection hole, and the thick pad electrode and the active circuit are electrically connected.

また衝撃吸収梁は、その一部を延長し保護膜に設けた別の接続孔により最上層配線層と接続される。厚いパッド電極を被覆金属配線層により被服した後、厚いパッド電極へのボンディング接続時に必要な領域のみ開口した保護樹脂層で半導体装置を被覆する構造である。   Further, the shock absorbing beam is connected to the uppermost wiring layer through another connection hole that is partially extended and provided in the protective film. After the thick pad electrode is coated with the covering metal wiring layer, the semiconductor device is covered with a protective resin layer that is opened only in a region necessary for bonding connection to the thick pad electrode.

厚いパッド電極を被覆金属配線層より機械的強度の高い金属材料で形成するとともにその厚さを前記衝撃吸収梁上に形成した前記保護膜の表面段差以上に設定することにより、ボンディング面方向の超音波振動に起因するボンディング衝撃を主として前記被覆金属配線層を変形させることで吸収・緩和することが可能となるとともに、下層へ伝播するボンディング衝撃を機械的強度の高い厚いパッド電極で分散することができボンディング衝撃による能動回路への影響を従来構造より低減できる。   By forming the thick pad electrode with a metal material having a mechanical strength higher than that of the coated metal wiring layer and setting the thickness to be equal to or greater than the surface step of the protective film formed on the shock absorbing beam, it is possible to It is possible to absorb and mitigate bonding impact caused by sonic vibration mainly by deforming the coated metal wiring layer and to disperse the bonding impact propagating to the lower layer with a thick pad electrode with high mechanical strength. The effect on the active circuit due to bonding impact can be reduced compared to the conventional structure.

加えて、衝撃により前記保護膜にクラックが発生した場合においても前記衝撃吸収梁によりクラックの伸展を抑止することができ能動回路との短絡を発生させないフェールセーフ構造であり、最上層配線を介して厚いパッド電極と衝撃吸収梁間の漏洩電流を測定することにより前記のクラック発生を検出することができるという自己診断機能を有する。   In addition, even when a crack is generated in the protective film due to an impact, the impact absorbing beam can suppress the extension of the crack, and a fail-safe structure that does not cause a short circuit with an active circuit. It has a self-diagnosis function capable of detecting the occurrence of cracks by measuring the leakage current between the thick pad electrode and the shock absorbing beam.

また、前記衝撃吸収梁に形成する開口部の平面形状を円形もしくは多角形にすることにより、ボンディング衝撃に対する指向性を無くすことができ能動回路上のボンディングパッドの配置位置自由度を向上できる。   Further, by making the planar shape of the opening formed in the shock absorbing beam circular or polygonal, directivity with respect to bonding impact can be eliminated, and the position of the bonding pad on the active circuit can be improved.

更に、前記厚いパッドと能動回路との接続部は保護樹脂層で保護されているため実装後の耐環境信頼性の劣化を抑止できる。   Furthermore, since the connection portion between the thick pad and the active circuit is protected by a protective resin layer, it is possible to suppress degradation of environmental resistance reliability after mounting.

（第１の実施形態）
以下、添付図面を参照しつつ、本発明の実施例を説明する。
図１は、本発明に係る能動回路上に配置されたボンディングパッド部の第１の実施例を示す模式的な平面図である。また、図２は図１中Ａ−Ａ´線で示す部分の模式的な断面図である。 (First embodiment)
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a schematic plan view showing a first embodiment of a bonding pad portion disposed on an active circuit according to the present invention. FIG. 2 is a schematic cross-sectional view taken along the line AA ′ in FIG.

第１の実施例は、図２に示すように第１の配線２で結線された能動回路１を被覆した層間絶縁層３の上面に、能動回路１が機能するよう第１の接続孔４を介して接続された第２の配線５と、平面構造において複数の開口を持つ衝撃吸収梁６がボンディング接続領域に設ける。   In the first embodiment, as shown in FIG. 2, the first connection hole 4 is formed on the upper surface of the interlayer insulating layer 3 covering the active circuit 1 connected by the first wiring 2 so that the active circuit 1 functions. The second wiring 5 connected via the shock absorbing beam 6 having a plurality of openings in the planar structure is provided in the bonding connection region.

第２の配線５と衝撃吸収梁６を設けた前記能動回路１を保護膜７により被覆し、図１に示すように保護膜７上に衝撃吸収梁６を被覆しその一部が保護膜７に設けられた第２接続孔８を介して能動回路１と電気的に接続されるよう厚い電極９を設け、ワイヤ１１をボンディングする際に必要な領域のみ開口した保護樹脂層１０により表面を保護した構造である。   The active circuit 1 provided with the second wiring 5 and the shock absorbing beam 6 is covered with a protective film 7, and the shock absorbing beam 6 is covered on the protective film 7 as shown in FIG. A thick electrode 9 is provided so as to be electrically connected to the active circuit 1 through the second connection hole 8 provided in the wire, and the surface is protected by a protective resin layer 10 opened only in a necessary region when bonding the wire 11. This is the structure.

第１の実施例において、衝撃吸収梁６を被覆する保護膜７の表面段差以上の膜厚に厚い電極９の膜厚を設定することが望ましい。   In the first embodiment, it is desirable to set the film thickness of the thick electrode 9 to a film thickness equal to or larger than the surface step of the protective film 7 covering the shock absorbing beam 6.

この膜厚に設定された厚い電極９にワイヤをボンディング接続する際、図２に示すように接続部の最下面は衝撃吸収梁６を被覆する保護膜７の最上面と同じかまたは高い位置となりボンディング衝撃の主要因である超音波振動の作用面は前記保護膜７の最上面より高くなるため、ボンディング衝撃は前記厚い電極９により吸収・緩和される。   When the wire is bonded to the thick electrode 9 set to this thickness, the lowermost surface of the connecting portion is the same as or higher than the uppermost surface of the protective film 7 covering the shock absorbing beam 6 as shown in FIG. Since the action surface of ultrasonic vibration, which is the main cause of the bonding impact, is higher than the uppermost surface of the protective film 7, the bonding impact is absorbed and alleviated by the thick electrode 9.

このボンディング衝撃の吸収・緩和性とボンディング接続性を両立するために、前記厚い電極９の材質としてはアルミ，アルミ合金，銅，ニッケル，クロム，チタン，チタン窒化膜，チタンタングステンのいずれか、またはこれらのうちの２以上のものの積層膜が望ましい。   In order to achieve both the absorption / relaxation of bonding impact and bonding connectivity, the thick electrode 9 is made of aluminum, aluminum alloy, copper, nickel, chromium, titanium, titanium nitride film, titanium tungsten, or A laminated film of two or more of these is desirable.

更に厚い電極９より下層に伝播したボンディング衝撃によって保護膜７にクラックが発生したとしても、クラックを発生させた後の過剰な衝撃は複数の開口を持つ網目状の前記衝撃吸収梁６を機械的に変形させることにより吸収される。   Even if a crack is generated in the protective film 7 due to the bonding impact propagated below the thicker electrode 9, the excessive impact after the crack is generated causes the mesh-like shock absorbing beam 6 having a plurality of openings to be mechanically applied. It is absorbed by deforming it.

これによりクラックの伸展を抑止できる。加えて、衝撃吸収梁６は前記能動回路１と電気的に絶縁されているため、保護膜７に発生したクラックを介して前記の厚い電極９と衝撃吸収梁６が電気的に短絡しても能動回路１に誤動作は発生しない。   Thereby, extension of a crack can be suppressed. In addition, since the shock absorbing beam 6 is electrically insulated from the active circuit 1, even if the thick electrode 9 and the shock absorbing beam 6 are electrically short-circuited through a crack generated in the protective film 7. No malfunction occurs in the active circuit 1.

加えて、第１の実施形態による能動回路上ボンディングパッドの配置に関し、能動回路１の表面段差状態の依存性またボンディング接続時に印加される超音波振動の方向依存性を無くすために、前記衝撃吸収梁６の開口形状は図３に示す円形もしくは図４に示す多角形が望ましい。   In addition, with respect to the arrangement of the bonding pads on the active circuit according to the first embodiment, the shock absorption is performed in order to eliminate the dependency of the surface step state of the active circuit 1 and the direction dependency of the ultrasonic vibration applied at the time of bonding connection. The opening shape of the beam 6 is preferably a circle shown in FIG. 3 or a polygon shown in FIG.

また機械的変形によるボンディング衝撃性を向上と製造過程の複雑さ低減を両立させるために、衝撃吸収梁６は前記の第２の配線５と同一材料でありアルミまたはアルミ合金を主材料とすることが望ましい。   Further, in order to improve both the bonding impact due to mechanical deformation and reduce the complexity of the manufacturing process, the shock absorbing beam 6 is made of the same material as the second wiring 5 and is mainly made of aluminum or an aluminum alloy. Is desirable.

また層間絶縁膜３は、衝撃吸収梁６と能動回路１との絶縁性に加え平坦性を確保するためシリコン酸化膜を主体とする膜が望ましく、保護膜７はボンディング衝撃に対する耐量を高めるため層間絶縁膜３より機械強度の高いシリコン窒化膜が望ましい。前記保護樹脂層１０は段差被覆性に優れ機械強度が高くかつ、耐熱性・耐湿性の高いポリイミド樹脂膜が望ましい。   The interlayer insulating film 3 is preferably a film mainly composed of a silicon oxide film in order to ensure flatness in addition to the insulation between the shock absorbing beam 6 and the active circuit 1, and the protective film 7 is an interlayer for increasing the resistance against bonding shock. A silicon nitride film having higher mechanical strength than the insulating film 3 is desirable. The protective resin layer 10 is preferably a polyimide resin film having excellent step coverage and high mechanical strength, and high heat resistance and moisture resistance.

（第２の実施形態）
図５は、本発明に係る能動回路上に配置されたボンディングパッド部の第２の実施例を示す模式的な断面図である。 (Second Embodiment)
FIG. 5 is a schematic sectional view showing a second embodiment of the bonding pad portion arranged on the active circuit according to the present invention.

第２の実施形態は、図５に示すように第１の実施例と同様に第１の配線３２で結線された能動回路３１を被覆した層間絶縁層３３の上面に、能動回路３１が機能するよう第２の配線３５と、平面構造において複数の開口を持つ衝撃吸収梁３６がボンディング接続領域に設ける。   In the second embodiment, as shown in FIG. 5, the active circuit 31 functions on the upper surface of the interlayer insulating layer 33 covering the active circuit 31 connected by the first wiring 32 as in the first embodiment. The second wiring 35 and the shock absorbing beam 36 having a plurality of openings in the planar structure are provided in the bonding connection region.

第２の配線３５と衝撃吸収梁３６を設けた前記能動回路３１は段差を緩和する処置を施した第２の層間絶縁層３７と保護膜３８により被覆し、保護膜３８上に前記衝撃吸収梁３６を被覆しその一部が第２の接続孔３９を介して能動回路３１と電気的に接続されるよう厚い電極４０を設け、ボンディング接続時に必要な領域のみ開口した保護樹脂層４１により表面を保護する構造である。   The active circuit 31 provided with the second wiring 35 and the shock absorbing beam 36 is covered with a second interlayer insulating layer 37 and a protective film 38 which have been treated to reduce the level difference, and the shock absorbing beam is formed on the protective film 38. A thick electrode 40 is provided so as to be electrically connected to the active circuit 31 through the second connection hole 39, and the surface is covered with a protective resin layer 41 which is opened only in a necessary region at the time of bonding connection. It is a structure to protect.

第２の実施例において、衝撃吸収梁３６を被覆する保護膜３８の表面段差以上の膜厚に厚い電極４０の膜厚を設定することが望ましい。また前記第２の層間絶縁層３７の段差緩和処置は、衝撃吸収梁３６上厚い電極４０の表面窪み部のテーパー角（図５中θと記載した角度）が４５°以上になるような段差緩和処置であることが望ましい。   In the second embodiment, it is desirable to set the film thickness of the thick electrode 40 to a film thickness equal to or larger than the surface step of the protective film 38 covering the shock absorbing beam 36. Further, the step relief treatment of the second interlayer insulating layer 37 is a step relief such that the taper angle (angle indicated by θ in FIG. 5) of the surface depression of the thick electrode 40 on the shock absorbing beam 36 is 45 ° or more. Desirably a treatment.

この構造によれば、ワイヤをボンディング接続する際の接続部の最下面は衝撃吸収梁３６を被覆する保護膜３８の最上面と同じかまたは高い位置となりボンディング衝撃の主要因である超音波振動の作用面は前記保護膜３８の最上面より高くなるとともに衝撃の鉛直方向成分より平面方向成分が大きくなり、厚い電極４０によるボンディング衝撃の吸収・緩和がより効率的なものとなる。   According to this structure, the lowermost surface of the connecting portion when bonding the wires is the same as or higher than the uppermost surface of the protective film 38 that covers the shock absorbing beam 36, and the ultrasonic vibration that is the main factor of the bonding impact is generated. The working surface is higher than the uppermost surface of the protective film 38 and the planar component is larger than the vertical component of the impact, so that the thicker electrode 40 can absorb and mitigate the bonding impact more efficiently.

厚い電極４０の材質としては、第１の実施例と同様にアルミ，アルミ合金，銅，ニッケル，クロム，チタン，チタン窒化膜，チタンタングステンのいずれか、またはこれらのうちの２以上のものの積層膜が望ましい。   As the material of the thick electrode 40, as in the first embodiment, aluminum, aluminum alloy, copper, nickel, chromium, titanium, titanium nitride film, titanium tungsten film, or a laminated film of two or more of them is used. Is desirable.

また第２の実施例においても、第１の実施例と同様に前記厚い電極４０より下層に伝播したボンディング衝撃により前記保護膜３８にクラックが発生したとしても、クラックを発生させた後の過剰な衝撃は複数の開口を持つ網目状の前記衝撃吸収梁３６を機械的に変形させることにより吸収され、クラックの伸展は抑止される。   Also in the second embodiment, as in the first embodiment, even if a crack is generated in the protective film 38 due to the bonding impact propagated below the thick electrode 40, an excessive amount after the crack is generated. The impact is absorbed by mechanically deforming the mesh-like shock absorbing beam 36 having a plurality of openings, and the extension of cracks is suppressed.

加えて衝撃吸収梁３６は前記能動回路３１と電気的に絶縁されているため、保護膜３８および第２の層間絶縁層３７に発生したクラックを介して前記の厚い電極４０と衝撃吸収梁３６が電気的に短絡しても能動回路３１に誤動作は発生しない。   In addition, since the shock absorbing beam 36 is electrically insulated from the active circuit 31, the thick electrode 40 and the shock absorbing beam 36 are connected to each other through cracks generated in the protective film 38 and the second interlayer insulating layer 37. Even if it is electrically short-circuited, no malfunction occurs in the active circuit 31.

（※以下、段落番号は提案書の番号とずれます）
また第２の実施例においても、能動回路３１の表面段差状態の依存性またボンディング接続時の超音波振動の方向依存性を無くすために、前記衝撃吸収梁３６の開口形状は図３に示す円形もしくは図４に示す多角形が望ましく、また機械的変形によるボンディング衝撃性を向上と製造過程の複雑さ低減を両立させるために、衝撃吸収梁３６は前記の第２の配線３５と同一材料でありアルミまたはアルミ合金を主材料とすることが望ましい。 (* The following paragraph numbers will be different from the proposal numbers.)
Also in the second embodiment, the opening shape of the shock absorbing beam 36 is circular as shown in FIG. 3 in order to eliminate the dependency of the surface step state of the active circuit 31 and the dependency of the ultrasonic vibration direction during bonding connection. Alternatively, the polygon shown in FIG. 4 is desirable, and the shock absorbing beam 36 is made of the same material as the second wiring 35 in order to improve the bonding impact due to mechanical deformation and reduce the complexity of the manufacturing process. It is desirable to use aluminum or an aluminum alloy as the main material.

前記第２の層間絶縁膜３７は段差緩和処置を実施したシリコン酸化膜を主体とする膜が望ましく、層間絶縁膜３３，保護膜３７および保護樹脂層４１は、第１の実施例と同様に、それぞれシリコン酸化膜を主体とする膜，シリコン窒化膜，ポリイミド樹脂膜が望ましい。   The second interlayer insulating film 37 is preferably a film mainly composed of a silicon oxide film that has been subjected to a step relief treatment. The interlayer insulating film 33, the protective film 37, and the protective resin layer 41 are formed in the same manner as in the first embodiment. A film mainly composed of a silicon oxide film, a silicon nitride film, and a polyimide resin film are preferable.

（第３の実施形態）
本発明に係る第３の実施例の能動回路上に配置されたボンディングパッド部の模式的な断面図を図６に示す。 (Third embodiment)
FIG. 6 shows a schematic sectional view of the bonding pad portion arranged on the active circuit of the third embodiment according to the present invention.

第３の実施例は、図６に示すように第１の実施例と同様に第１の配線５２で結線された能動回路５１を被覆した層間絶縁層５３の上面に、能動回路５１が機能するよう第１の接続孔５４を介して接続された第２の配線５５と平面構造において複数の開口を持つ衝撃吸収梁５６を配し、保護膜５７により被覆する。   In the third embodiment, as shown in FIG. 6, the active circuit 51 functions on the upper surface of the interlayer insulating layer 53 covering the active circuit 51 connected by the first wiring 52 as in the first embodiment. A shock absorbing beam 56 having a plurality of openings in a planar structure and a second wiring 55 connected through the first connection hole 54 are arranged and covered with a protective film 57.

衝撃吸収梁５６上方に保護膜５７を介して厚いパッド電極５９が設けその上面と全側面を被覆金属配線層６０により被覆する。被覆金属配線層６０の一部を延長した配線により第２接続孔５８を介して厚いパッド電極５９と前記能動回路５１とを電気的に接続し、ワイヤ６２をボンディングする際に必要な領域のみ開口した保護樹脂層６１により表面を保護した構造である。   A thick pad electrode 59 is provided above the shock absorbing beam 56 via a protective film 57, and the upper surface and all side surfaces thereof are covered with the covering metal wiring layer 60. The thick pad electrode 59 and the active circuit 51 are electrically connected to each other through the second connection hole 58 by a wiring obtained by extending a part of the covering metal wiring layer 60, and only an area necessary for bonding the wire 62 is opened. The surface of the protective resin layer 61 is protected.

第３の実施例の厚いパッド電極５９において、衝撃吸収梁５６を被覆する保護膜５７の表面段差以上の膜厚に厚いパッド電極５９の膜厚を設定することが望ましい。また厚いパッド電極５９の材質としては被覆する被覆金属配線層６０より機械的強度が高い材料が望ましく、アルミ合金，銅，ニッケル，クロム，タングステン，チタン，チタン窒化膜，チタンタングステンのいずれか、またはこれらのうちの２以上のものの積層膜が望ましい。   In the thick pad electrode 59 of the third embodiment, it is desirable to set the film thickness of the thick pad electrode 59 to a film thickness equal to or larger than the surface step of the protective film 57 covering the shock absorbing beam 56. The material of the thick pad electrode 59 is preferably a material having higher mechanical strength than the coated metal wiring layer 60 to be coated, and is any one of aluminum alloy, copper, nickel, chromium, tungsten, titanium, titanium nitride film, titanium tungsten, or A laminated film of two or more of these is desirable.

また前記被覆金属配線層６０は、主たる構成材料として厚いパッド電極５９の構成材料より機械的強度の低い材料でありワイヤボンディング時の接合強度を確保可能な材料が望ましく、アルミ，アルミ合金，金のいずれかかまたは、上層がアルミまたはアルミ合金いずれかであり下層がチタン，チタン窒化膜，チタンタングステンのいずれかで構成された２層積層膜が望ましい。   The coated metal wiring layer 60 is preferably made of a material having a mechanical strength lower than that of the thick pad electrode 59 as a main constituent material and capable of ensuring the bonding strength at the time of wire bonding, such as aluminum, aluminum alloy, or gold. Either one or a two-layer laminated film in which the upper layer is made of aluminum or an aluminum alloy and the lower layer is made of titanium, titanium nitride film, or titanium tungsten is desirable.

厚いパッド電極５９と被覆金属配線層６０をこれらの材料により構成することにより、ワイヤボンディング時の衝撃は主に被覆金属配線層６０の変形により吸収・緩和されるとともに、過剰な衝撃の下層への伝播は機械的強度の高い厚いパッド電極５９により分散されるため下層への影響を低減できる。   By configuring the thick pad electrode 59 and the coated metal wiring layer 60 with these materials, the impact during wire bonding is absorbed and mitigated mainly by deformation of the coated metal wiring layer 60, and excessive impact is applied to the lower layer. Since the propagation is dispersed by the thick pad electrode 59 having high mechanical strength, the influence on the lower layer can be reduced.

また第３の実施例では、前記の厚いパッド電極５９と能動回路５１とは厚いパッド電極５９を被覆する被覆金属配線層６０の一部により第２の接続孔５８を介して接続されているため接続部の配線被覆段差を低くできるため、図６に示すように保護樹脂層６１による接続部の被覆が十分なものとなり接合部の高信頼性化が図れる。   In the third embodiment, the thick pad electrode 59 and the active circuit 51 are connected through the second connection hole 58 by a part of the coated metal wiring layer 60 covering the thick pad electrode 59. Since the wiring covering step of the connecting portion can be reduced, the connecting portion is sufficiently covered with the protective resin layer 61 as shown in FIG. 6, and the reliability of the joint portion can be increased.

加えて層間絶縁層５３， 衝撃吸収梁５６および保護樹脂層６１は、その機能および望ましい材料は第１の実施例または第２の実施例と同じであるためその記載を省略する。   In addition, since the functions and desirable materials of the interlayer insulating layer 53, the shock absorbing beam 56, and the protective resin layer 61 are the same as those in the first embodiment or the second embodiment, description thereof is omitted.

また保護膜５７は第１の実施例に記載の保護膜７と同じかもしくは第２の実施例に記載の第２の層間絶縁層３７および保護膜３８と同じ膜による２層積層膜で構成されていることが望ましい。   The protective film 57 is formed of a two-layered film that is the same as the protective film 7 described in the first embodiment or the same film as the second interlayer insulating layer 37 and the protective film 38 described in the second embodiment. It is desirable that

（第４の実施形態）
本発明に係る第４の実施例の能動回路上に配置されたボンディングパッド部の模式的な断面図を図７に示すとともに図７中のＢ部の詳細図を図８に示す。 (Fourth embodiment)
FIG. 7 shows a schematic sectional view of the bonding pad portion arranged on the active circuit of the fourth embodiment according to the present invention, and FIG. 8 shows a detailed view of a portion B in FIG.

第４の実施例は、図７に示すように第１の実施例と同様に第１の配線７２で結線された能動回路７１を被覆した層間絶縁層７３の上面に、能動回路７１が機能するよう第１の接続孔７４を介して接続された第２の配線７５と平面構造において複数の開口を持つ衝撃吸収梁７６を配し、保護膜７７により被覆する。衝撃吸収梁７６上に密着強化金属層７９とシード電極層８０を介して厚いパッド電極８１を設けその上面と全側面を被覆金属配線層８２により被覆する。   In the fourth embodiment, as shown in FIG. 7, the active circuit 71 functions on the upper surface of the interlayer insulating layer 73 covering the active circuit 71 connected by the first wiring 72 as in the first embodiment. A shock absorbing beam 76 having a plurality of openings in a planar structure is arranged with the second wiring 75 connected through the first connection hole 74 and covered with a protective film 77. A thick pad electrode 81 is provided on the shock absorbing beam 76 via an adhesion reinforcing metal layer 79 and a seed electrode layer 80, and the upper surface and all side surfaces thereof are covered with a covering metal wiring layer 82.

厚いパッド電極８１は密着強化金属層７９，シード電極層８０および被覆金属配線層８２の一部を延長した配線により第２の接続孔７８を介して能動回路７１は電気的に接続され、ワイヤ８４をボンディングする際に必要な領域のみ開口した保護樹脂層８３により表面を保護した構造である。   The thick pad electrode 81 is electrically connected to the active circuit 71 via the second connection hole 78 by a wire extending a part of the adhesion reinforcing metal layer 79, the seed electrode layer 80 and the covering metal wiring layer 82, and the wire 84. In this structure, the surface is protected by a protective resin layer 83 which is opened only in a region necessary for bonding.

第４の実施例において、密着強化金属層７９は保護膜７７との密着性の高い金属薄膜が望ましく、チタン，チタン窒化膜，チタンタングステンのいずれかかまたはこれらのうちの２以上のものの積層膜で構成されていることが望ましい。   In the fourth embodiment, the adhesion reinforcing metal layer 79 is preferably a metal thin film having high adhesion to the protective film 77, and is a laminated film of any one of titanium, titanium nitride film, titanium tungsten, or two or more of these. It is desirable that

厚いパッド電極８１はシード電極層８０と同一材質でありシード電極層８０を形成時の種として用いるメッキ法により形成される金属膜が望ましく、材質としては電気抵抗が低く機械強度の高い銅が望ましい。またその膜厚については、第３の実施例に記載の厚いパッド電極５９と同じ要件を満たすことが望ましい。   The thick pad electrode 81 is made of the same material as the seed electrode layer 80 and is preferably a metal film formed by plating using the seed electrode layer 80 as a seed when forming the seed electrode layer 80. The material is preferably copper having low electrical resistance and high mechanical strength. . As for the film thickness, it is desirable to satisfy the same requirements as the thick pad electrode 59 described in the third embodiment.

ボンディング衝撃の吸収・緩和に対する被覆金属配線層８２で被覆した厚いパッド電極８１の機能は第３の実施例と同様でありその詳細は省略するが、第４の実施例においては、前記密着強化金属層７９を介して保護膜７７上に厚いパッド電極８１を設けるため、ボンディング時の超音波衝撃によるせん断力に対する厚いパッド電極８１の付着耐量が向上し信頼性の高いボンディングパッドを得ることが出来る。   The function of the thick pad electrode 81 covered with the covering metal wiring layer 82 for absorbing and mitigating the bonding impact is the same as that of the third embodiment, and the details thereof are omitted, but in the fourth embodiment, the adhesion reinforcing metal Since the thick pad electrode 81 is provided on the protective film 77 via the layer 79, the adhesion resistance of the thick pad electrode 81 to the shearing force due to ultrasonic impact during bonding is improved, and a highly reliable bonding pad can be obtained.

また厚いパッド電極８１と前記能動回路７１を接続する配線も、図８に示すように密着強化金属層７９，シード電極層８０および被覆金属配線層８２の積層構造により構成されるため、厚いパッド電極８１に対する接続性および保護膜７７に対する密着性が高く、信頼性の高い接続配線を得ることができる。   Further, the wiring connecting the thick pad electrode 81 and the active circuit 71 is also composed of a laminated structure of the adhesion reinforcing metal layer 79, the seed electrode layer 80 and the covering metal wiring layer 82 as shown in FIG. A highly reliable connection wiring with high connectivity to 81 and adhesion to the protective film 77 can be obtained.

加えて層間絶縁層７３， 衝撃吸収梁７６および保護樹脂層８３は、その機能および望ましい材料は第１の実施例または第２の実施例と同じであるためその記載を省略する。   In addition, since the functions and desirable materials of the interlayer insulating layer 73, the shock absorbing beam 76, and the protective resin layer 83 are the same as those in the first embodiment or the second embodiment, description thereof is omitted.

また保護膜７７は第１の実施例に記載の保護膜７と同じかもしくは、第２の実施例に記載の第２の層間絶縁層３７および保護膜３８と同じ膜による２層積層膜が望ましい。   Further, the protective film 77 is preferably the same as the protective film 7 described in the first embodiment or a two-layer laminated film made of the same film as the second interlayer insulating layer 37 and the protective film 38 described in the second embodiment. .

（第５の実施形態）
本発明に係る第５の実施例の能動回路上に配置されたボンディングパッド部の模式的な断面図を図９に示すとともに図９中のＣ部の拡大断面例を図１０に示す。 (Fifth embodiment)
FIG. 9 shows a schematic cross-sectional view of the bonding pad portion disposed on the active circuit of the fifth embodiment according to the present invention, and FIG. 10 shows an enlarged cross-sectional example of the portion C in FIG.

第５の実施例は、図９に示すように第１の実施例と同様に第１の配線７２で結線された能動回路７１を被覆した層間絶縁層７３の上面に、能動回路７１が機能するよう第１の接続孔７４を介して接続された第２の配線７５と平面構造において複数の開口を持つ衝撃吸収梁７６を配し、保護膜７７により被覆する。衝撃吸収梁７６上に密着強化金属層７９と介して厚いパッド電極８１を設け、厚いパッド電極８１の上面と全側面を被覆金属配線層８２により被覆する。   In the fifth embodiment, as shown in FIG. 9, the active circuit 71 functions on the upper surface of the interlayer insulating layer 73 covering the active circuit 71 connected by the first wiring 72 as in the first embodiment. A shock absorbing beam 76 having a plurality of openings in a planar structure is arranged with the second wiring 75 connected through the first connection hole 74 and covered with a protective film 77. A thick pad electrode 81 is provided on the shock absorbing beam 76 via an adhesion reinforcing metal layer 79, and the upper surface and all side surfaces of the thick pad electrode 81 are covered with a covering metal wiring layer 82.

また厚いパッド電極８１は密着強化金属層７９と被覆金属配線層８２との一部を延長し積層した配線，第２の接続孔７８，第２の配線７５および第１の接続孔７４を経由して能動回路７１と電気的に接続し、ワイヤ８４をボンディングする際に必要な領域のみ開口した保護樹脂層８３により表面を保護した構造である。   Further, the thick pad electrode 81 passes through a wiring obtained by extending and laminating a part of the adhesion reinforcing metal layer 79 and the covering metal wiring layer 82, the second connection hole 78, the second wiring 75, and the first connection hole 74. Thus, the surface is protected by a protective resin layer 83 that is electrically connected to the active circuit 71 and opened only in a region necessary for bonding the wire 84.

第５の実施例においては、厚いパッド電極８１は上面および全側面を被覆金属配線層８２により底面を密着強化金属層７９により完全に封止される。厚いパッド電極８１を形成する際にシード電極層８０を用いる場合においても図１０に示すように厚いパッド電極８１に加えシード電極層８０も密着強化金属層７９と被覆金属配線層８２により完全に封止される。   In the fifth embodiment, the thick pad electrode 81 is completely sealed on the top surface and all side surfaces by the covering metal wiring layer 82 and on the bottom surface by the adhesion reinforcing metal layer 79. Even when the seed electrode layer 80 is used when forming the thick pad electrode 81, the seed electrode layer 80 in addition to the thick pad electrode 81 is completely sealed by the adhesion reinforcing metal layer 79 and the coated metal wiring layer 82 as shown in FIG. Stopped.

また第２の接続孔７８を介して能動回路７１と厚いパッド電極８１を接続する接続配線は密着強化金属層７９と被覆金属配線層８２との積層により形成するため、電気抵抗またはその製造工程上の簡便さを優先させ厚いパッド電極８１の構成材料として材質面で耐湿性にやや劣る材料を用いた場合においても、耐環境性を劣化させることなく信頼性の高いボンディングパッドおよび接続配線を得ることができる。   Further, since the connection wiring for connecting the active circuit 71 and the thick pad electrode 81 through the second connection hole 78 is formed by stacking the adhesion reinforcing metal layer 79 and the covering metal wiring layer 82, the electrical resistance or the manufacturing process thereof is required. In the case of using a material that is slightly inferior in moisture resistance in terms of material as a constituent material of the thick pad electrode 81 in view of simplicity of the process, a highly reliable bonding pad and connection wiring can be obtained without deteriorating the environmental resistance Can do.

第５の実施例による能動回路上ボンディングパッドにおいても、ボンディング接続時の衝撃に対する吸収・緩和機能およびに耐せん断性については第４の実施例と同様であり、密着強化金属層７９，シード電極層８０，厚いパッド電極８１および被覆金属配線層８２それぞれの機能および望ましい材料は第４の実施例と同じであるためその詳細は省略する。加えて、層間絶縁層７３， 衝撃吸収梁７６，保護膜７７および保護樹脂層８３についても第４の実施例と同じであるためその詳細は省略する。   Also in the bonding pad on the active circuit according to the fifth embodiment, the absorption / relaxation function and the shear resistance against the impact at the time of bonding connection are the same as those of the fourth embodiment, and the adhesion strengthening metal layer 79, the seed electrode layer Since the functions and desirable materials of the 80, thick pad electrode 81 and coated metal wiring layer 82 are the same as those in the fourth embodiment, their details are omitted. In addition, since the interlayer insulating layer 73, the shock absorbing beam 76, the protective film 77, and the protective resin layer 83 are the same as those in the fourth embodiment, their details are omitted.

（第６の実施形態）
図１１は、本発明に係る能動回路上に配置されたボンディングパッド部の第６の実施例を示す模式的な平面図である。また、図１２は第６の実施例を示す模式的な平面図１１のＤ−Ｄ´での断面図である。 (Sixth embodiment)
FIG. 11 is a schematic plan view showing a sixth embodiment of the bonding pad portion arranged on the active circuit according to the present invention. FIG. 12 is a cross-sectional view taken along the line DD ′ of the schematic plan view 11 showing the sixth embodiment.

第６の実施例は、図１２に示すように第１の実施例と同様に第１の配線９２で結線された能動回路９１を被覆した層間絶縁層９３の上面に、能動回路９１が機能するよう第１の接続孔９４を介して接続された第２の配線９５と平面構造において複数の開口を持つ衝撃吸収梁９６と配し保護膜９７により被覆する。   In the sixth embodiment, as shown in FIG. 12, the active circuit 91 functions on the upper surface of the interlayer insulating layer 93 covering the active circuit 91 connected by the first wiring 92 as in the first embodiment. A shock absorbing beam 96 having a plurality of openings in a planar structure and a second wiring 95 connected via the first connection hole 94 are arranged and covered with a protective film 97.

衝撃吸収梁９６の近傍にボンディングパッドと能動回路９１を電気的に接続する第２の接続孔９８を設けた後、衝撃吸収梁９６と第２の接続孔９８を被覆するよう厚いパッド電極９９を設け、ワイヤ１０１をボンディングする際に必要な領域のみ開口した保護樹脂層１００により表面を保護した構造である。   After providing a second connection hole 98 for electrically connecting the bonding pad and the active circuit 91 in the vicinity of the shock absorbing beam 96, a thick pad electrode 99 is formed so as to cover the shock absorbing beam 96 and the second connecting hole 98. It has a structure in which the surface is protected by a protective resin layer 100 that is provided and opened only in a region necessary for bonding the wire 101.

図１１および図１２に示すように第６の実施例においては、厚いパッド電極９１は衝撃吸収梁９６の近傍に設けた第２の接続孔９８を介して能動回路９１と電気的に接続するため、接続配線が不要となり能動回路上ボンディングパッド構造において更に省面積効果を高めることができる。   As shown in FIGS. 11 and 12, in the sixth embodiment, the thick pad electrode 91 is electrically connected to the active circuit 91 through the second connection hole 98 provided in the vicinity of the shock absorbing beam 96. Thus, no connection wiring is required, and the area saving effect can be further enhanced in the bonding pad structure on the active circuit.

加えて厚いパッド電極９１へワイヤ１０１をボンディング接続する際にはボンディングボールの接続面が衝撃吸収梁９６上のみに形成されるよう第２の接続孔９８を配置することにより、第１の実施例で記載したように衝撃吸収梁９６によりボンディング衝撃の伝搬を抑止するフェールセーフ構造であるため、厚いパッド電極９１直下の第２の接続孔９８においてボンディング衝撃による接続不具合は発生しない。   In addition, when the wire 101 is bonded and connected to the thick pad electrode 91, the second connection hole 98 is arranged so that the connection surface of the bonding ball is formed only on the shock absorbing beam 96. As described above, since the fail-safe structure suppresses the propagation of the bonding impact by the impact absorbing beam 96, the connection failure due to the bonding impact does not occur in the second connection hole 98 immediately below the thick pad electrode 91.

衝撃吸収梁９６において、その機能は前述のように第１の実施例と同じであり望ましい材質も同じであるため、その詳細は省略する。同様に、層間絶縁層９３および保護樹脂層１００それぞれの機能および望ましい材料も第１の実施例と同じであるためその詳細は省略する。   Since the function of the shock absorbing beam 96 is the same as that of the first embodiment as described above and the desirable material is also the same, the details thereof are omitted. Similarly, the functions and desirable materials of the interlayer insulating layer 93 and the protective resin layer 100 are also the same as those in the first embodiment, and the details thereof are omitted.

また厚いパッド電極９１は、第３の実施例から第５の実施例に記載の構造および材質が望ましい。加えて保護膜９７については、前述の理由により第１の実施例に記載の保護膜７と同じかもしくは第２の実施例に記載の第２の層間絶縁層３７および保護膜３８と同じ膜による２層積層膜で構成されていることが望ましい。   The thick pad electrode 91 preferably has the structure and material described in the third to fifth embodiments. In addition, the protective film 97 is the same as the protective film 7 described in the first embodiment or the same film as the second interlayer insulating layer 37 and the protective film 38 described in the second embodiment for the reasons described above. It is desirable to be composed of a two-layer laminated film.

（第７の実施形態）
図１３は、本発明に係る能動回路上に配置されたボンディングパッド部の第７の実施例を示す模式的な平面図である。また、図１４は第７の実施例を示す模式的な平面図１３のＥ−Ｅ´での断面図であり、図１５は図１４中のＦ部の拡大断面例を示す。 (Seventh embodiment)
FIG. 13 is a schematic plan view showing a seventh embodiment of the bonding pad portion disposed on the active circuit according to the present invention. FIG. 14 is a cross-sectional view taken along the line EE ′ of the schematic plan view 13 showing the seventh embodiment, and FIG. 15 shows an enlarged cross-sectional example of the F portion in FIG.

第７の実施例は、図１３および１４に示すように第１の実施例と同様に第１の配線１１２で結線された能動回路１１１を被覆した層間絶縁層１１３の上面に、能動回路１１１が機能するよう第１の接続孔１１４を介して接続された第２の配線１１５と平面構造において複数の開口を持つ衝撃吸収梁１１６と配し保護膜１１７により被覆する。衝撃吸収梁１１６の近傍にボンディングパッドと能動回路１１１を電気的に接続する第２の接続孔１１８を設けた後、密着強化金属層１１９と介して衝撃吸収梁１１６と第２の接続孔１１８を被覆するよう厚いパッド電極１２１を設け、厚いパッド電極１２１の上面と全側面を被覆金属配線層１２２により被覆する。   In the seventh embodiment, as shown in FIGS. 13 and 14, the active circuit 111 is formed on the upper surface of the interlayer insulating layer 113 covering the active circuit 111 connected by the first wiring 112 as in the first embodiment. The second wiring 115 connected via the first connection hole 114 and the shock absorbing beam 116 having a plurality of openings in a planar structure are arranged and covered with the protective film 117 so as to function. After providing the second connection hole 118 for electrically connecting the bonding pad and the active circuit 111 in the vicinity of the shock absorbing beam 116, the shock absorbing beam 116 and the second connecting hole 118 are connected via the adhesion reinforcing metal layer 119. A thick pad electrode 121 is provided so as to cover it, and the upper surface and all side surfaces of the thick pad electrode 121 are covered with a covering metal wiring layer 122.

また衝撃吸収梁１１６はその一部を延長し第３の接続孔１２７を介して最上層配線１２６に電気的に接続し、ワイヤ８４をボンディングする際に必要な領域のみ開口した保護樹脂層１２４により表面を保護した構造である。   The shock absorbing beam 116 is partly extended and electrically connected to the uppermost layer wiring 126 through the third connection hole 127, and a protective resin layer 124 opened only in a necessary region when the wire 84 is bonded. The surface is protected.

第７の実施例は、衝撃吸収梁１１６は第３の接続孔１２７を介して最上層配線１２６に接続されているため、ボンディング衝撃により衝撃吸収梁１１６を被覆している保護膜１１７にクラックが発生しボンディング接続時に厚いパッド電極１２１と衝撃吸収梁１１６とが短絡した場合または実使用時の環境変化による前記クラックが経時的に伸展しパッド電極１２１と衝撃吸収梁１１６とが短絡した場合に厚いパッド電極１２１と衝撃吸収梁１１６との間の漏洩電流を計測することにより前期クラックの有無を検出することができる。   In the seventh embodiment, since the shock absorbing beam 116 is connected to the uppermost layer wiring 126 through the third connection hole 127, the protective film 117 covering the shock absorbing beam 116 is cracked by the bonding shock. When the thick pad electrode 121 and the shock absorbing beam 116 are short-circuited at the time of bonding connection, or when the crack is extended with time due to an environmental change during actual use and the pad electrode 121 and the shock absorbing beam 116 are short-circuited, they are thick. By measuring the leakage current between the pad electrode 121 and the shock absorbing beam 116, the presence or absence of the previous crack can be detected.

すなわち、第７の実施例による半導体装置は、第６の実施例と同様に衝撃吸収梁１１６の近傍に設けた第２の接続孔１１８を介して厚いパッド電極１２１と能動回路１１１とを電気的に接続するため接続配線が不要となり省面積効果を高めることができることに加え、ボンディング衝撃による不良および使用環境下における経時劣化によるボンディング部の不良を検出できる自己診断機能を持つ半導体装置である。   That is, the semiconductor device according to the seventh embodiment electrically connects the thick pad electrode 121 and the active circuit 111 via the second connection hole 118 provided in the vicinity of the shock absorbing beam 116 as in the sixth embodiment. This is a semiconductor device having a self-diagnosis function that can detect a defect due to bonding impact and a defect of a bonding part due to deterioration over time in a use environment, in addition to eliminating the need for connection wiring because it is connected to the substrate.

また厚いパッド電極１２１は、第５の実施例と同様に上面および全側面を被覆金属配線層１２２により底面を密着強化金属層１１９により完全に封止される。厚いパッド電極１２１を形成する際にシード電極層１２０を用いる場合においても図１５に示すように厚いパッド電極１２１に加えシード電極層１２０も密着強化金属層１１９と被覆金属配線層１２２により完全に封止される。   Further, the thick pad electrode 121 is completely sealed with the covering metal wiring layer 122 on the upper surface and all the side surfaces and the adhesion reinforcing metal layer 119 on the bottom surface as in the fifth embodiment. Even when the seed electrode layer 120 is used when forming the thick pad electrode 121, the seed electrode layer 120 in addition to the thick pad electrode 121 is completely sealed by the adhesion reinforcing metal layer 119 and the covering metal wiring layer 122 as shown in FIG. Stopped.

また最上層配線１２６は、密着強化金属層１１９と同一材質で形成された最上層配線密着層１２９と被覆金属配線層１２２と同一構造同一材質で形成された最上層配線被覆層１２９の積層により構成されることが望ましい。   In addition, the uppermost layer wiring 126 is configured by stacking the uppermost layer wiring adhesion layer 129 made of the same material as the adhesion reinforcing metal layer 119 and the uppermost layer wiring covering layer 129 made of the same material as the covering metal wiring layer 122. It is desirable that

加えて第７の実施例も、衝撃吸収梁１１６を有するためボンディング衝撃の伝搬を抑止するフェールセーフ構造の半導体装置であり、構造および材質は第１の実施例と同じであり望ましい材質も同じであるため、その詳細は省略する。同様に、層間絶縁層９３および保護樹脂層１００それぞれの機能および望ましい材料も第１の実施例と同じであるためその詳細は省略する。   In addition, the seventh embodiment is also a fail-safe semiconductor device that has a shock absorbing beam 116 to suppress the propagation of bonding impact, and the structure and material are the same as those of the first embodiment, and the desirable materials are the same. Details are omitted here. Similarly, the functions and desirable materials of the interlayer insulating layer 93 and the protective resin layer 100 are also the same as those in the first embodiment, and the details thereof are omitted.

また前述のように、密着強化金属層１１９， シード電極層１２０，厚いパッド電極１２１およびは、被覆金属配線層１２２それぞれの機能および望ましい材料も第５の実施例と同じであるためその詳細は省略する。   Further, as described above, the adhesion reinforcing metal layer 119, the seed electrode layer 120, the thick pad electrode 121, and the functions and desirable materials of the coated metal wiring layer 122 are the same as those in the fifth embodiment, and the details thereof are omitted. To do.

加えて保護膜１２４については、前述の理由により第１の実施例に記載の保護膜７と同じかもしくは第２の実施例に記載の第２の層間絶縁層３７および保護膜３８と同じ膜による２層積層膜で構成されていることが望ましい。   In addition, the protective film 124 is the same as the protective film 7 described in the first embodiment or the same film as the second interlayer insulating layer 37 and the protective film 38 described in the second embodiment for the reasons described above. It is desirable to be composed of a two-layer laminated film.

（第１の実施方法）
本発明による第１の実施例と第２の実施例の製造方法について、第１の実施例を例に図１６から図２０を参照しつつ第１の実施方法を説明する。 (First implementation method)
The manufacturing method of the first embodiment and the second embodiment according to the present invention will be described with reference to FIGS. 16 to 20 by taking the first embodiment as an example.

図１６に示すように、機能するよう第１の配線３０２で結線した能動回路３０１を層間絶縁膜３０３で被覆し第１の接続孔３０４を形成した後、第１の金属膜３０５を成膜する。この際、層間絶縁膜３０４は段差緩和処置を実施したシリコン酸化膜を主体とする膜が望ましく、第１の金属膜３０５はアルミまたはアルミ合金を主材料とすることが望ましい。   As shown in FIG. 16, the active circuit 301 connected with the first wiring 302 so as to function is covered with an interlayer insulating film 303 to form a first connection hole 304, and then a first metal film 305 is formed. . At this time, the interlayer insulating film 304 is preferably a film mainly composed of a silicon oxide film subjected to a step relaxation treatment, and the first metal film 305 is preferably made of aluminum or an aluminum alloy as a main material.

その後、図１７に示すように、マスク材を用いて第１の金属膜３０５を加工し第２の配線３０６と衝撃吸収梁３０７を形成する。この際、衝撃吸収梁３０７は複数の開口を持ちその開口形状が円形または多角形となるよう加工する。   Thereafter, as shown in FIG. 17, the first metal film 305 is processed using a mask material to form the second wiring 306 and the shock absorbing beam 307. At this time, the shock absorbing beam 307 has a plurality of openings and is processed so that the opening shape is circular or polygonal.

図１８に示すように保護膜３０８で能動回路３０１を被覆した後、第２の接続孔３０９を形成し、保護膜３０８上に衝撃吸収梁３０７を被覆するとともに第２の接続孔３０９を介して能動回路３０１と電気的に接続されるよう厚い電極３１０を設ける（図１９参照）。その後、図２０に示すように保護樹脂層３１１で被覆し厚い電極３１０にボンディングする際に必要な領域のみ開口する。   As shown in FIG. 18, after covering the active circuit 301 with the protective film 308, a second connection hole 309 is formed, and the shock absorbing beam 307 is covered on the protective film 308 and the second connection hole 309 is interposed. A thick electrode 310 is provided so as to be electrically connected to the active circuit 301 (see FIG. 19). Thereafter, as shown in FIG. 20, only a region necessary for bonding to the thick electrode 310 is opened by covering with the protective resin layer 311.

この際、保護膜３０８はシリコン窒化膜もしくは第２の実施例で記載した平坦化処理を実施したシリコン酸化膜上にシリコン窒化膜を形成した積層膜が望ましく、厚い電極３１０は膜厚を衝撃吸収梁３０７上の保護膜３０８における表面段差以上の膜厚に設定しその材質としてアルミ，アルミ合金，銅，ニッケル，クロム，チタン，チタン窒化膜，チタンタングステンのいずれか、またはこれらのうちの２以上のものの積層膜が望ましい。   At this time, the protective film 308 is desirably a silicon nitride film or a laminated film in which a silicon nitride film is formed on the silicon oxide film subjected to the planarization process described in the second embodiment, and the thick electrode 310 absorbs the film thickness by shock absorption. The thickness of the protective film 308 on the beam 307 is set to a thickness equal to or greater than the surface level difference, and the material thereof is aluminum, aluminum alloy, copper, nickel, chromium, titanium, titanium nitride film, titanium tungsten, or two or more of these. A laminated film of these is desirable.

また保護樹脂層３１１は段差被覆性に優れ機械強度が高くかつ、耐熱性・耐湿性の高いポリイミド樹脂膜が望ましい。   The protective resin layer 311 is preferably a polyimide resin film having excellent step coverage and high mechanical strength, and high heat resistance and moisture resistance.

（第２の実施方法）
本発明による第３の実施例と第７の実施例の製造方法について、第７の実施例を例に図２１から図２９を参照しつつ第２の実施方法を説明する。 (Second implementation method)
The manufacturing method of the third embodiment and the seventh embodiment according to the present invention will be described with reference to FIGS. 21 to 29 with the seventh embodiment as an example.

機能するよう第１の配線５０２で結線した能動回路５０１を層間絶縁膜５０３で被覆し、第１の接続孔５０４を形成した後第１の金属膜５０５を成膜する（図２１参照）。この際、層間絶縁膜５０４は段差緩和処置を実施したシリコン酸化膜を主体とする膜が望ましく、第１の金属膜５０５はアルミまたはアルミ合金を主材料とすることが望ましい。   The active circuit 501 connected by the first wiring 502 so as to function is covered with the interlayer insulating film 503, and after forming the first connection hole 504, the first metal film 505 is formed (see FIG. 21). At this time, the interlayer insulating film 504 is preferably a film mainly composed of a silicon oxide film that has been subjected to leveling mitigation, and the first metal film 505 is preferably made of aluminum or an aluminum alloy as a main material.

その後、図２２に示すように、マスク材を用いて第１の金属膜５０５を加工し第２の配線５０６と衝撃吸収梁５０７を形成する。この際、衝撃吸収梁５０７は複数の開口を持ちその開口形状が円形または多角形となるよう加工する。   After that, as shown in FIG. 22, the first metal film 505 is processed using a mask material to form the second wiring 506 and the shock absorbing beam 507. At this time, the shock absorbing beam 507 has a plurality of openings and is processed so that the shape of the openings is circular or polygonal.

図２３に示すように保護膜５０８で能動回路５０１を被覆した後、第３の接続孔５０９を形成し密着強化膜５１０を形成する（図２４参照）。同時にその後形成する厚いパッド電極と前記能動回路５０１とを電気的に接続するための接続孔を衝撃吸収梁５０７の近傍に形成する。   As shown in FIG. 23, after covering the active circuit 501 with a protective film 508, a third connection hole 509 is formed to form an adhesion enhancing film 510 (see FIG. 24). At the same time, a connection hole for electrically connecting the thick pad electrode formed thereafter and the active circuit 501 is formed in the vicinity of the shock absorbing beam 507.

この際、保護膜５０８はシリコン窒化膜もしくは第２の実施例で記載した平坦化処理を実施したシリコン酸化膜上にシリコン窒化膜を形成した積層膜が望ましい。また密着強化膜５１０は保護膜５０８との密着性の高い金属薄膜が望ましくチタン，チタン窒化膜，チタンタングステンのいずれか、またはこれらのうちの２以上のものの積層膜で構成されていることが望ましい。   At this time, the protective film 508 is preferably a silicon nitride film or a laminated film in which a silicon nitride film is formed on the silicon oxide film subjected to the planarization process described in the second embodiment. Further, the adhesion reinforcing film 510 is preferably a metal thin film having high adhesion to the protective film 508, and is preferably composed of titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. .

次に、図２５に示すように厚い金属膜５１１を形成しフォトリソグラフィ技術によりマスク材５１２を衝撃吸収梁５０７と前記の能動回路５０１と電気的に接続するための接続孔を被覆するよう形成する。この際厚い金属膜５１１は、その膜厚を衝撃吸収梁５０７上の保護膜５０８の表面段差以上の膜厚となるよう設定し、その材質として電気抵抗が低く機械強度の高い銅が望ましい。   Next, as shown in FIG. 25, a thick metal film 511 is formed, and a mask material 512 is formed so as to cover the connection hole for electrically connecting the shock absorbing beam 507 and the active circuit 501 by photolithography. . At this time, the thick metal film 511 is set to have a film thickness equal to or greater than the surface step of the protective film 508 on the shock absorbing beam 507, and the material is preferably copper having low electrical resistance and high mechanical strength.

その後マスク材５１２を用いて厚い金属膜５１１をエッチングし厚いパッド電極５１３を形成する。（図２６参照）。この際のエッチングは能動回路５０１にダメージを与えない湿式エッチングが望ましい。   Thereafter, the thick metal film 511 is etched using the mask material 512 to form a thick pad electrode 513. (See FIG. 26). Etching at this time is preferably wet etching that does not damage the active circuit 501.

次に図２７に示すように、被覆金属膜５１４を成膜したのちフォトリソグラフィ技術により厚いパッド電極５１３を被覆するとともに少なくとも第３の接続孔５０９を介して衝撃吸収梁５０７と電気的に接続する配線ができるようマスク材５１５を形成する。この際被覆金属膜５１４は、上層がワイヤボンディング時の接合強度を確保可能なアルミまたはアルミ合金いずれかであり、下層が上層金属と厚いパッド電極との反応を抑止できるチタン，チタン窒化膜，チタンタングステンのいずれかで構成された２層積層膜が望ましい。また厚いパッド電極５１３を被覆するマスク材は、平面的大きさを厚いパッド電極５１３の大きさより大きくなるよう設定する。   Next, as shown in FIG. 27, after forming a coating metal film 514, the thick pad electrode 513 is coated by photolithography and is electrically connected to the shock absorbing beam 507 through at least the third connection hole 509. A mask material 515 is formed so that wiring can be performed. At this time, the covering metal film 514 is made of aluminum or aluminum alloy whose upper layer can secure the bonding strength at the time of wire bonding, and the lower layer is titanium, titanium nitride film, titanium that can suppress the reaction between the upper layer metal and the thick pad electrode. A two-layer laminated film composed of any of tungsten is desirable. The mask material covering the thick pad electrode 513 is set to have a larger planar size than the thick pad electrode 513.

その後マスク材５１５を用いて被覆金属膜５１４と密着強化膜５１０とを連続してエッチング除去し、厚いパッド電極５１３を封止するよう密着強化金属層５１６および被覆金属配線層５１７を形成するとともに、最上層配線を形成する最上層配線密着強化層５１８と最上層配線被覆層５１９を形成する（図２８参照）。この際のエッチング除去も能動回路５０１にダメージを与えない湿式エッチングが望ましい。   Subsequently, the mask metal 515 is used to continuously remove the coating metal film 514 and the adhesion reinforcing film 510 by etching to form the adhesion reinforcing metal layer 516 and the coating metal wiring layer 517 so as to seal the thick pad electrode 513. An uppermost layer wiring adhesion reinforcing layer 518 and an uppermost layer wiring covering layer 519 for forming the uppermost layer wiring are formed (see FIG. 28). Etching removal at this time is preferably wet etching that does not damage the active circuit 501.

最後に、図２９に示すように保護樹脂層５２０で被覆し厚いパッド電極５１３にボンディングする際に必要な領域のみ開口する。保護樹脂層５２０の材質としては、段差被覆性に優れ機械強度が高くかつ耐熱性・耐湿性の高いポリイミド樹脂膜が望ましい。   Finally, as shown in FIG. 29, only a region necessary for bonding to the thick pad electrode 513 with the protective resin layer 520 is opened. As a material of the protective resin layer 520, a polyimide resin film having excellent step coverage and high mechanical strength, and high heat resistance and moisture resistance is desirable.

（第３の実施方法）
本発明による第４の実施例と第７の実施例に対する別の製造方法について、第７の実施例を例に図３０から図３６を参照しつつ第３の実施方法を説明する。 (Third implementation method)
As another manufacturing method for the fourth and seventh embodiments according to the present invention, the third embodiment will be described with reference to FIGS. 30 to 36 in the seventh embodiment.

図３０に示すように、第２の実施方法と同様な製造方法により第２の配線５０６と衝撃吸収梁５０７を形成した後能動回路５０１を保護膜５０８で被覆する。更に第２の実施方法と同様に第３の接続孔５０９と密着強化膜５１０を形成した後、密着強化膜５１０にシード金属層６０１を成膜する（図３１参照）。   As shown in FIG. 30, after the second wiring 506 and the shock absorbing beam 507 are formed by the manufacturing method similar to the second implementation method, the active circuit 501 is covered with a protective film 508. Further, after forming the third connection hole 509 and the adhesion reinforcing film 510 as in the second implementation method, a seed metal layer 601 is formed on the adhesion reinforcing film 510 (see FIG. 31).

次に図３２に示すように、フォトリソグラフィ技術により形成したマスク材６０２を用いシード金属層６０１を電極として電気メッキ法により厚いパッド電極６０３を形成する。シード金属層６０１と厚いパッド電極６０３の材質としては電気抵抗が低く機械強度の高い銅が望ましく、加えて厚いパッド電極６０３の膜厚は衝撃吸収梁５０７上の保護膜５０８の表面段差以上の膜厚となるよう設定することが望ましい。   Next, as shown in FIG. 32, a thick pad electrode 603 is formed by electroplating using a mask material 602 formed by a photolithography technique and using the seed metal layer 601 as an electrode. The material of the seed metal layer 601 and the thick pad electrode 603 is preferably copper with low electrical resistance and high mechanical strength. In addition, the film thickness of the thick pad electrode 603 is greater than the surface level difference of the protective film 508 on the shock absorbing beam 507. It is desirable to set it to be thick.

マスク材６０２を除去した後、湿式エッチング法か厚いパッド電極６０３の形成時の電気メッキとは逆のバイアスを印加した電気分解かまたは両者の複合処理により厚いパッド電極６０３下部以外の領域のシード金属層６０１を除去する（図３３参照）。   After removing the mask material 602, seed metal in a region other than the lower portion of the thick pad electrode 603 by wet etching, electrolysis applied with a reverse bias to electroplating at the time of forming the thick pad electrode 603, or a combination of the two. The layer 601 is removed (see FIG. 33).

その後、図３４に示すように、被覆金属膜６０４を成膜した後フォトリソグラフィ技術により厚いパッド電極６０３を被覆するとともに少なくとも第３の接続孔５０９を介して衝撃吸収梁５０７と電気的に接続する配線ができるようマスク材６０５を形成する。   Then, as shown in FIG. 34, after forming a coating metal film 604, the thick pad electrode 603 is coated by photolithography and is electrically connected to the shock absorbing beam 507 through at least the third connection hole 509. A mask material 605 is formed so that wiring can be performed.

この際被覆金属膜６０４は、上層がワイヤボンディング時の接合強度を確保可能なアルミまたはアルミ合金いずれかであり、下層が上層金属と厚いパッド電極との反応を抑止できるチタン，チタン窒化膜，チタンタングステンのいずれかで構成された２層積層膜が望ましく前記密着強化膜５１０と同一構造・材料であることが望ましい。また厚いパッド電極６０３を被覆するマスク材は、平面的大きさを厚いパッド電極６０３の大きさより大きくなるよう設定する。   At this time, the coating metal film 604 is made of aluminum or aluminum alloy whose upper layer can secure the bonding strength at the time of wire bonding, and the lower layer is titanium, titanium nitride film, titanium that can suppress the reaction between the upper layer metal and the thick pad electrode. A two-layer laminated film composed of any one of tungsten is desirable, and the same structure / material as the adhesion enhancing film 510 is desirable. Further, the mask material covering the thick pad electrode 603 is set to have a larger planar size than that of the thick pad electrode 603.

次に、マスク材６０５を用いて被覆金属膜６０４と密着強化膜５１０とを連続してエッチング除去し、厚い電極６０３を封止するよう密着強化金属層６０５および被覆金属配線層６０６を形成するとともに、最上層配線を形成する最上層配線密着強化層６０７と最上層配線被覆層６０８を形成する（図３５参照）。この際のエッチング除去も能動回路５０１にダメージを与えない湿式エッチングが望ましい。   Next, the coating metal film 604 and the adhesion reinforcing film 510 are continuously removed by etching using the mask material 605 to form the adhesion reinforcing metal layer 605 and the coating metal wiring layer 606 so as to seal the thick electrode 603. Then, the uppermost layer wiring adhesion reinforcing layer 607 and the uppermost layer wiring covering layer 608 for forming the uppermost layer wiring are formed (see FIG. 35). Etching removal at this time is preferably wet etching that does not damage the active circuit 501.

最後に、図３６に示すように保護樹脂層６０９で被覆し厚いパッド電極６０３にボンディングする際に必要な領域のみ開口する。保護樹脂層６０９の材質としては、段差被覆性に優れ機械強度が高くかつ耐熱性・耐湿性の高いポリイミド樹脂膜が望ましい。   Finally, as shown in FIG. 36, only a region necessary for bonding to the thick pad electrode 603 is formed by covering with a protective resin layer 609. As a material of the protective resin layer 609, a polyimide resin film having excellent step coverage and high mechanical strength, and high heat resistance and moisture resistance is desirable.

本発明の第１の実施形態における能動回路上に配置されたボンディングパッド部の模式的な平面図である。It is a typical top view of the bonding pad part arrange | positioned on the active circuit in the 1st Embodiment of this invention. 図１中、Ａ−Ａ´線で切断した部分の模式的な断面図である。It is typical sectional drawing of the part cut | disconnected by the AA 'line | wire in FIG. 衝撃吸収梁の開口形状を示す第１の模式的な平面図である。It is a 1st typical top view showing the opening shape of a shock absorption beam. 衝撃吸収梁の開口形状を示す第２の模式的な平面図である。It is a 2nd schematic top view which shows the opening shape of an impact-absorbing beam. 本発明の第２の実施形態における能動回路上に配置されたボンディングパッド部の模式的な断面図である。It is typical sectional drawing of the bonding pad part arrange | positioned on the active circuit in the 2nd Embodiment of this invention. 本発明の第３の実施形態における能動回路上に配置されたボンディングパッド部の模式的な断面図である。It is typical sectional drawing of the bonding pad part arrange | positioned on the active circuit in the 3rd Embodiment of this invention. 本発明の第４の実施形態における能動回路上に配置されたボンディングパッド部の模式的な断面図である。It is typical sectional drawing of the bonding pad part arrange | positioned on the active circuit in the 4th Embodiment of this invention. 図７中、Ｂで示す部分の構造の一例を示す模式的な断面図である。It is typical sectional drawing which shows an example of the structure of the part shown by B in FIG. 本発明の第５の実施形態における能動回路上に配置されたボンディングパッド部の模式的な略断面図である。It is a typical schematic sectional drawing of the bonding pad part arrange | positioned on the active circuit in the 5th Embodiment of this invention. 図９中、Ｃで示す部分の構造の一例を示す模式的な断面図である。It is typical sectional drawing which shows an example of the structure of the part shown by C in FIG. 本発明の第６の実施形態における能動回路上に配置されたボンディングパッド部の模式的な平面図である。It is a typical top view of the bonding pad part arrange | positioned on the active circuit in the 6th Embodiment of this invention. 図１１中、Ｄ−Ｄ´線で切断した部分の模式的な断面図である。It is typical sectional drawing of the part cut | disconnected by the DD 'line in FIG. 本発明の第７の実施形態における能動回路上に配置されたボンディングパッド部の模式的な平面図である。It is a typical top view of the bonding pad part arrange | positioned on the active circuit in the 7th Embodiment of this invention. 図１３中、Ｅ−Ｅ´線で切断した部分の模式的な断面図である。It is typical sectional drawing of the part cut | disconnected by the EE 'line | wire in FIG. 図１４中、Ｆで示す部分の構造の一例を示す模式的な断面図である。It is typical sectional drawing which shows an example of the structure of the part shown by F in FIG. 本発明の第１および第２の実施例に係る第１の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その１）である。FIG. 3 is a schematic cross-sectional view (No. 1) showing the first implementation method according to the first and second embodiments of the present invention and showing the state of each stage of the manufacturing process. 本発明の第１および第２の実施例に係る第１の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その２）である。FIG. 6 is a schematic cross-sectional view (No. 2) showing the first implementation method according to the first and second embodiments of the present invention and showing the state of each stage of the manufacturing process. 本発明の第１および第２の実施例に係る第１の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その３）である。FIG. 6 is a schematic cross-sectional view (No. 3) showing the first implementation method according to the first and second embodiments of the present invention and showing the state of each stage of the manufacturing process. 本発明の第１および第２の実施例に係る第１の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その４）である。FIG. 6 is a schematic cross-sectional view (No. 4) showing the first implementation method according to the first and second embodiments of the present invention and showing the state of each stage of the manufacturing process. 本発明の第１および第２の実施例に係る第１の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その５）である。FIG. 9 is a schematic cross-sectional view (No. 5) showing the first implementation method according to the first and second embodiments of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その１）である。FIG. 8 is a schematic cross-sectional view (No. 1) showing a second implementation method according to the third and seventh embodiments of the present invention and showing a state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その２）である。FIG. 9 is a schematic cross-sectional view (No. 2) showing the second implementation method according to the third and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その３）である。FIG. 10 is a schematic cross-sectional view (No. 3) showing the second implementation method according to the third and seventh embodiments of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その４）である。FIG. 10 is a schematic cross-sectional view (No. 4) showing the second implementation method according to the third and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その５）である。FIG. 10 is a schematic cross-sectional view (No. 5) showing the second implementation method according to the third and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その６）である。FIG. 10 is a schematic cross-sectional view (No. 6) showing the second implementation method according to the third and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その７）である。FIG. 10 is a schematic cross-sectional view (No. 7) showing the second implementation method according to the third and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その８）である。FIG. 10 is a schematic cross-sectional view (No. 8) showing the second implementation method according to the third and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第３および第７の実施例に係る第２の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その９）である。It is typical sectional drawing (the 9) which shows the 2nd implementation method which concerns on the 3rd and 7th Example of this invention, and shows the state of each step of a manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その１）である。FIG. 9 is a schematic cross-sectional view (No. 1) showing a third implementation method according to the fourth and seventh examples of the present invention and showing a state of each stage of the manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その２）である。FIG. 9 is a schematic cross-sectional view (No. 2) showing the third implementation method according to the fourth and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その３）である。FIG. 10 is a schematic cross-sectional view (No. 3) showing the third implementation method according to the fourth and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その４）である。FIG. 10 is a schematic cross-sectional view (No. 4) showing the third implementation method according to the fourth and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その５）である。FIG. 10 is a schematic cross-sectional view (No. 5) showing the third implementation method according to the fourth and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その６）である。FIG. 10 is a schematic cross-sectional view (No. 6) showing the third implementation method according to the fourth and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 本発明の第４および第７の実施例に係る第３の実施方法を示し、製造工程の各段階の状態を示す模式的断面図（その７）である。FIG. 14 is a schematic cross-sectional view (No. 7) showing the third implementation method according to the fourth and seventh examples of the present invention and showing the state of each stage of the manufacturing process. 第１の従来技術によるボンディングパッドの断面を示す図The figure which shows the cross section of the bonding pad by 1st prior art 第２の従来技術によるボンディングパッドの断面を示す図The figure which shows the cross section of the bonding pad by 2nd prior art

符号の説明Explanation of symbols

図面中、１，３１，５１，７１，９１，１１１，３０１，５０１は能動回路、２，３２，５２，７２，９２，１１２，３０２，５０２は第１の配線、３，３３，５３，７３，９３，１１３，３０３，５０３は層間絶縁層、４，３４，５４，７４，９４，１１４，３０４，５０４は第1の接続孔、５，３５，５５，７５，９５，１１５，３０６，５０６は第２の配線、６，３６，５６，７６，９６，１１６，３０７，５０７は衝撃吸収梁、７，３８，５７，７７，９７，１１７，３０８，５０８は保護膜、８，３９，５８，７８，９８，１１８，３０９，５０９は第２の接続孔、９，４０，３１０は厚い電極、１０，４１，６１，８３，１００，１２４，３１１，５２０，６０９は保護樹脂層、１１，６２，８４，１０１，１２５，３１２，５２１，６１０はボンディングワイヤ、２１は円形の開口部を持つ衝撃吸収梁、２２は多角形の開口部を持つ衝撃吸収梁，３７は第２の層間絶縁層、５９，８１，９９，１２１，５１３，６０３は厚いパッド電極、６０，８２，１２２，５１６，６０６は被覆金属配線層、７９，１１９，５１５，６０５は密着強化金属層、８０，１２０，６０１はシート゛金属層、１２３はボンディングパット領域、１２６は最上層配線、１２７，５０９は第３の接続孔、１２８，５１８，６０７は最上層配線密着強化層、１２９，５１９，６０８は最上層配線被覆層、２０１は能動回路、２０２は下部金属層、２０３はレベル間酸化物層、２０４は導体、２０５は上部金属層、２０６は保護膜、２０７は接続孔、２０８はポリイミド層、２０９はボンディングパッド、２１０は導電性ワイヤ、２１１は樹脂形成化合物、２２１は半導体本体、２２２は第１の金属層、２２３は絶縁層、２２４は第２の金属層、２２５はパシベーション材料層、２２６は接続領域、２２７はワイヤボンディング領域、２２８はワイヤ、３０５，５０５は第１の金属膜、５１０は密着強化金属膜，５１１は厚い金属膜、５１２，５１５，６０２はマスク材、５１４，６０４は被覆金属膜である。

In the drawing, 1, 31, 51, 71, 91, 111, 301, 501 are active circuits, 2, 32, 52, 72, 92, 112, 302, 502 are first wirings, 3, 33, 53, 73. , 93, 113, 303, 503 are interlayer insulating layers, 4, 34, 54, 74, 94, 114, 304, 504 are first connection holes, 5, 35, 55, 75, 95, 115, 306, 506. Is a second wiring, 6, 36, 56, 76, 96, 116, 307, 507 are shock absorbing beams, 7, 38, 57, 77, 97, 117, 308, 508 are protective films, 8, 39, 58 78, 98, 118, 309, 509 are second connection holes, 9, 40, 310 are thick electrodes, 10, 41, 61, 83, 100, 124, 311, 520, 609 are protective resin layers, 62, 84, 101, 125, 312, 52 1, 610 is a bonding wire, 21 is a shock absorbing beam having a circular opening, 22 is a shock absorbing beam having a polygonal opening, 37 is a second interlayer insulating layer, 59, 81, 99, 121, 513 , 603 is a thick pad electrode, 60, 82, 122, 516 and 606 are coated metal wiring layers, 79, 119, 515 and 605 are adhesion strengthening metal layers, 80, 120 and 601 are sheet metal layers, and 123 is a bonding pad area. , 126 is the uppermost layer wiring, 127 and 509 are the third connection holes, 128, 518 and 607 are the uppermost layer wiring adhesion reinforcing layers, 129, 519 and 608 are the uppermost layer wiring covering layers, 201 is the active circuit, and 202 is the lower portion Metal layer, 203 interlevel oxide layer, 204 conductor, 205 upper metal layer, 206 protective film, 207 connection hole, 208 polyimide layer, 209 bonding 210, a conductive wire, 211 a resin forming compound, 221 a semiconductor body, 222 a first metal layer, 223 an insulating layer, 224 a second metal layer, 225 a passivation material layer, and 226 a connection Area, 227 is a wire bonding area, 228 is a wire, 305 and 505 are first metal films, 510 is an adhesion strengthening metal film, 511 is a thick metal film, 512, 515 and 602 are mask materials, and 514 and 604 are coated metals It is a membrane.

Claims (81)

半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記層間絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記能動回路を保護するよう形成された保護膜と、
前記保護膜の一部に設けられた第２の接続孔を介して前期第２の配線と接続され且つ前記衝撃吸収梁上を十分に被覆するよう配置された厚い電極と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the interlayer insulating layer and having a plurality of openings in a planar structure;
A protective film formed to protect the active circuit;
A thick electrode connected to the second wiring in the previous period through a second connection hole provided in a part of the protective film and arranged to sufficiently cover the shock absorbing beam;
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記衝撃吸収梁の段差を緩和するよう形成した第２の層間絶縁層と、
前記能動回路を保護するよう前記第２の層間絶縁層上に形成された保護膜と、
前記第２の層間絶縁層と前記保護膜とを開口して形成した第２の接続孔を介して前記第２の配線と接続され且つ前記衝撃吸収梁上を十分に被覆するよう配置された厚い電極と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the insulating layer and having a plurality of openings in a planar structure;
A second interlayer insulating layer formed so as to alleviate the step of the shock absorbing beam;
A protective film formed on the second interlayer insulating layer to protect the active circuit;
The second interlayer insulating layer and the protective film are connected to the second wiring through a second connection hole formed by opening the second interlayer insulating layer and the protective film, and are thick enough to cover the shock absorbing beam. Electrodes,
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 前記第２の層間絶縁層が、シリコン酸化物を主体とする絶縁膜であることを特徴とする請求項２に記載の半導体装置。   The semiconductor device according to claim 2, wherein the second interlayer insulating layer is an insulating film mainly composed of silicon oxide. 前記厚い電極の膜厚が、前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項１から請求項３のいずれかに記載の半導体装置。   4. The semiconductor device according to claim 1, wherein a thickness of the thick electrode is equal to or greater than a surface level difference of the protective film covering the shock absorbing beam. 5. 前記厚い電極が、アルミ，アルミ合金，銅，ニッケル，クロム，チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項１から請求項４のいずれかに記載の半導体装置。   The thick electrode is made of aluminum, aluminum alloy, copper, nickel, chromium, titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. The semiconductor device according to claim 1. 半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記層間絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記能動回路を保護するよう形成された保護膜と、
前記衝撃吸収梁上を十分に被覆するよう前記保護膜上に形成された厚いパッド電極と、
前記厚いパッド電極の上面および全側面を被覆し且つその一部が前記保護膜に設けられた第２の接続孔を介して前記第２の配線と接続された被覆金属配線層と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the interlayer insulating layer and having a plurality of openings in a planar structure;
A protective film formed to protect the active circuit;
A thick pad electrode formed on the protective film to sufficiently cover the shock absorbing beam;
A coated metal wiring layer that covers the upper surface and all side surfaces of the thick pad electrode and a part of which is connected to the second wiring via a second connection hole provided in the protective film;
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 前記厚いパッド電極の膜厚が、前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項６に記載の半導体装置。   The semiconductor device according to claim 6, wherein a film thickness of the thick pad electrode is equal to or greater than a surface level difference of the protective film covering the shock absorbing beam. 前記厚いパッド電極が、アルミ合金，銅，ニッケル，クロム，タングステン，チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項６または請求項７に記載の半導体装置。   The thick pad electrode is formed of an aluminum alloy, copper, nickel, chromium, tungsten, titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. The semiconductor device according to claim 6 or 7. 前記被覆金属配線層が、アルミ，アルミ合金，金のいずれか，アルミまたはアルミ合金とチタン，チタン窒化膜，チタンタングステンのいずれかの積層膜で構成されていることを特徴とする請求項６から請求項８のいずれかに記載の半導体装置。   7. The coated metal wiring layer is made of any one of aluminum, aluminum alloy, and gold, or a laminated film of any of aluminum or aluminum alloy and titanium, titanium nitride film, or titanium tungsten. The semiconductor device according to claim 8. 半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記層間絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記能動回路を保護するよう形成された保護膜と、
前記保護膜との密着性を向上するための密着強化金属層と、
厚いパッド電極を形成するためのシード電極層を介して前記衝撃吸収梁上を十分に被覆するよう前記保護膜上に形成された厚いパッド電極と、
前記厚いパッド電極の上面および全側面を被覆し且つその一部が前記密着強化金属層と前記シード電極層とを介して保護膜に設けられた第２の接続孔により前記第２の配線と接続された被覆金属配線層と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the interlayer insulating layer and having a plurality of openings in a planar structure;
A protective film formed to protect the active circuit;
An adhesion reinforcing metal layer for improving adhesion with the protective film;
A thick pad electrode formed on the protective film so as to sufficiently cover the shock absorbing beam via a seed electrode layer for forming a thick pad electrode;
The thick pad electrode covers the upper surface and all side surfaces, and a part of the thick pad electrode is connected to the second wiring through a second connection hole provided in the protective film via the adhesion reinforcing metal layer and the seed electrode layer. Coated metal wiring layer,
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記層間絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記能動回路を保護するよう形成された保護膜と、
前記保護膜との密着性を向上するための密着強化金属層を介して前記衝撃吸収梁上を十分に被覆するよう前記保護膜上に形成された厚いパッド電極と、
前記厚いパッド電極の上面および全側面を被覆し且つその一部が密着強化金属層を介して保護膜に設けられた第２の接続孔により前記第２の配線と接続された被覆金属配線層と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the interlayer insulating layer and having a plurality of openings in a planar structure;
A protective film formed to protect the active circuit;
A thick pad electrode formed on the protective film so as to sufficiently cover the shock absorbing beam via an adhesion reinforcing metal layer for improving adhesion with the protective film;
A coated metal wiring layer that covers the upper surface and all side surfaces of the thick pad electrode, and a portion of which is connected to the second wiring by a second connection hole provided in the protective film via an adhesion reinforcing metal layer; ,
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 前記シード電極層および前記厚いパッド電極を、前記密着強化金属層と前記被覆金属配線層により封止することを特徴とする請求項１１に記載の半導体装置。   12. The semiconductor device according to claim 11, wherein the seed electrode layer and the thick pad electrode are sealed by the adhesion reinforcing metal layer and the coated metal wiring layer. 前記密着強化金属層が、チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項１０から請求項１２のいずれかに記載の半導体装置。   13. The structure according to claim 10, wherein the adhesion reinforcing metal layer is made of titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. A semiconductor device according to claim 1. 前記シード電極層の材質と前記厚いパッド電極の材質が、同一材質であることを特徴とする請求項１０から請求項１３のいずれかに記載の半導体装置。   14. The semiconductor device according to claim 10, wherein a material of the seed electrode layer and a material of the thick pad electrode are the same material. 前記厚いパッド電極の材質が銅であり、その膜厚が前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項１０から請求項１４のいずれかに記載の半導体装置。   The material of the thick pad electrode is copper, and the film thickness is a film thickness equal to or greater than the surface step of the protective film covering the shock absorbing beam. The semiconductor device described. 前記被覆金属配線層が、上層がアルミまたはアルミ合金で構成され、下層がチタン，チタン窒化膜，チタンタングステンのいずれかで構成した積層膜であることを特徴とする請求項１０から請求項１５のいずれかに記載の半導体装置。   16. The coated metal wiring layer according to claim 10, wherein the upper layer is made of aluminum or an aluminum alloy, and the lower layer is a laminated film made of titanium, titanium nitride film, or titanium tungsten. The semiconductor device according to any one of the above. 半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記層間絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記能動回路を保護するよう形成された保護膜と、
前記衝撃吸収梁上を十分に被覆するよう前記保護膜上に形成され且つその一部が前記衝撃吸収梁に隣接する位置の前記保護膜に設けられた第２の接続孔を介して前記第２の配線と接続された厚いパッド電極と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the interlayer insulating layer and having a plurality of openings in a planar structure;
A protective film formed to protect the active circuit;
The second film is formed on the protective film so as to sufficiently cover the shock absorbing beam, and a part of the second film is formed through a second connection hole provided in the protective film at a position adjacent to the shock absorbing beam. A thick pad electrode connected to the wiring of
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 前記第２の接続孔が、前記厚いパッド電極の直下であり且つ、前記厚いパッド電極とワイヤとの接続面より外となるよう開口されていることを特徴とする請求項１７に記載の半導体装置。   18. The semiconductor device according to claim 17, wherein the second connection hole is opened immediately below the thick pad electrode and outside the connection surface between the thick pad electrode and the wire. . 前記厚いパッド電極の膜厚が、前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項１７または請求項１８に記載の半導体装置。   19. The semiconductor device according to claim 17, wherein a film thickness of the thick pad electrode is equal to or greater than a surface level difference of the protective film covering the shock absorbing beam. 前記厚いパッド電極が、アルミ，アルミ合金，銅，ニッケル，クロム，チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項１７から請求項１９のいずれかに記載の半導体装置。   The thick pad electrode is made of aluminum, aluminum alloy, copper, nickel, chromium, titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. The semiconductor device according to any one of claims 17 to 19. 前記被覆金属配線層が、アルミ，アルミ合金，金のいずれか，アルミまたはアルミ合金とチタン，チタン窒化膜，チタンタングステンのいずれかの積層膜で構成されていることを特徴とする請求項１７から請求項２０のいずれかに記載の半導体装置。   The coated metal wiring layer is made of any one of aluminum, aluminum alloy, and gold, or a laminated film of any of aluminum or aluminum alloy and titanium, titanium nitride film, or titanium tungsten. The semiconductor device according to claim 20. 半導体基板の表面に設けられた能動回路と、
前記能動回路が機能するよう接続された第１の配線と、
層間絶縁層の一部に設けられた第１の接続孔を介して前記第１の配線と接続された第２の配線と、
前記層間絶縁層上に形成され平面構造において複数の開口を持つ衝撃吸収梁と、
前記能動回路を保護するよう形成された保護膜と、
前記保護膜との密着性を向上するための密着強化金属層と、
厚いパッド電極を形成するためのシード電極層と、
前記衝撃吸収梁上を十分に被覆するよう前記保護膜上に形成され且つその一部が前記衝撃吸収梁に隣接する位置の前記保護膜に設けられた第２の接続孔を介して前記第２の配線と接続された厚いパッド電極と、
前記厚いパッド電極の上面および全側面を被覆し被覆金属配線層と、
前記衝撃吸収梁と第３の接続孔を介して接続された最上層配線と、
前記能動回路を被覆し且つ前記衝撃吸収梁上にボンディング接続時に必要な領域を開口した保護樹脂層と
を備えたことを特徴とする半導体装置。 An active circuit provided on the surface of the semiconductor substrate;
A first wiring connected so that the active circuit functions;
A second wiring connected to the first wiring through a first connection hole provided in a part of the interlayer insulating layer;
A shock absorbing beam formed on the interlayer insulating layer and having a plurality of openings in a planar structure;
A protective film formed to protect the active circuit;
An adhesion reinforcing metal layer for improving adhesion with the protective film;
A seed electrode layer for forming a thick pad electrode;
The second film is formed on the protective film so as to sufficiently cover the shock absorbing beam, and a part of the second film is formed through a second connection hole provided in the protective film at a position adjacent to the shock absorbing beam. A thick pad electrode connected to the wiring of
A coated metal wiring layer covering the top and all sides of the thick pad electrode;
A top layer wiring connected to the shock absorbing beam via a third connection hole;
A semiconductor device comprising: a protective resin layer that covers the active circuit and has an opening necessary for bonding connection on the shock absorbing beam. 前記最上層配線が、前記被覆金属配線層と同一材料からなる配線か、または、最上層配線被覆層前記密着強化金属層と同一材料からなる最上層配線密着層と前記被覆金属配線層と同一材料からなる最上層配線被覆層の積層構造であることを特徴とする請求項２２に記載の半導体装置。   The uppermost layer wiring is made of the same material as the coated metal wiring layer, or the uppermost layer wiring coating layer is made of the same material as the adhesion reinforcing metal layer, and the same material as the coated metal wiring layer. 23. The semiconductor device according to claim 22, wherein the semiconductor device has a laminated structure of uppermost wiring covering layers. 前記シード電極層および前記厚いパッド電極を、前記密着強化金属層と前記被覆金属配線層により封止することを特徴とする請求項２２または請求項２３に記載の半導体装置。   24. The semiconductor device according to claim 22, wherein the seed electrode layer and the thick pad electrode are sealed with the adhesion reinforcing metal layer and the coated metal wiring layer. 前記密着強化金属層が、チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項２２から請求項２４のいずれかに記載の半導体装置。   25. Any one of claims 22 to 24, wherein the adhesion strengthening metal layer is composed of titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. A semiconductor device according to claim 1. 前記シード電極層の材質と前記厚いパッド電極の材質が、同一材質であることを特徴とする請求項２２から請求項２５のいずれかに記載の半導体装置。   26. The semiconductor device according to claim 22, wherein a material of the seed electrode layer and a material of the thick pad electrode are the same material. 前記厚いパッド電極の材質が銅であり、その膜厚が前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項２２から請求項２６のいずれかに記載の半導体装置。   27. The material according to claim 22, wherein the material of the thick pad electrode is copper, and the film thickness is equal to or greater than the surface step of the protective film covering the shock absorbing beam. The semiconductor device described. 前記被覆金属配線層が、上層がアルミまたはアルミ合金で構成され、下層がチタン，チタン窒化膜，チタンタングステンのいずれかで構成した積層膜であることを特徴とする請求項２２から請求項２７のいずれかに記載の半導体装置。   28. The coated metal wiring layer according to claim 22, wherein the upper metal layer is made of aluminum or an aluminum alloy, and the lower layer is a laminated film made of titanium, titanium nitride film, or titanium tungsten. The semiconductor device according to any one of the above. 前記第２の接続孔が、前記厚いパッド電極の直下であり且つ、前記厚いパッド電極とワイヤとの接続面より外となるよう開口されていることを特徴とする請求項２２から請求項２８のいずれかに記載の半導体装置。   29. The second connection hole according to claim 22, wherein the second connection hole is opened immediately below the thick pad electrode and outside the connection surface between the thick pad electrode and the wire. The semiconductor device according to any one of the above. 前記衝撃吸収梁の開口形状が円形であることを特徴とする請求項２２から請求項２９のいずれかに記載の半導体装置。   30. The semiconductor device according to claim 22, wherein an opening shape of the shock absorbing beam is circular. 前記衝撃吸収梁の開口形状が多角形であることを特徴とする請求項２２から請求項２９のいずれかに記載の半導体装置。   30. The semiconductor device according to claim 22, wherein an opening shape of the shock absorbing beam is a polygon. 前記衝撃吸収梁の材質が、前記第２の配線の材質と同じであることを特徴とする請求項２２から請求項３１のいずれかに記載の半導体装置。   32. The semiconductor device according to claim 22, wherein a material of the shock absorbing beam is the same as a material of the second wiring. 前記衝撃吸収梁の主となる材質が、アルミまたはアルミ合金であることを特徴とする請求項１から請求項３２のいずれかに記載の半導体装置。   The semiconductor device according to any one of claims 1 to 32, wherein a main material of the shock absorbing beam is aluminum or an aluminum alloy. 前記保護膜が、シリコン窒化膜であることを特徴とする請求項１から請求項３３のいずれかに記載の半導体装置。   The semiconductor device according to any one of claims 1 to 33, wherein the protective film is a silicon nitride film. 前記保護樹脂層が、ポリイミド樹脂膜であることを特徴とする請求項１から請求項３４のいずれかに記載の半導体装置。   The semiconductor device according to any one of claims 1 to 34, wherein the protective resin layer is a polyimide resin film. 半導体基板の表面に設けられた能動回路に、その能動回路が機能するよう第１の配線を接続する工程と、
層間絶縁層を形成する工程と、
第１の接続孔を前記層間絶縁層に形成する工程と、
第２の配線を形成する工程と、
平面構造において複数の開口を持つ衝撃吸収梁を形成する工程と、
前記能動回路を被覆するよう保護膜を形成する工程と、
前記第２の配線と接続するため前記保護膜の一部に第２の接続孔を開口する工程と、
前記衝撃吸収梁上を十分に被覆し且つ第２の接続孔を介して前記第２の配線と接続するよう成形された厚い電極を形成する工程と、
前記衝撃吸収梁上の前記厚い電極にボンディング接続できるよう必要な領域を開口した保護樹脂層により前記能動回路を被覆する工程と
を備えたことを特徴とする半導体装置の製造方法。 Connecting a first wiring to an active circuit provided on a surface of a semiconductor substrate so that the active circuit functions;
Forming an interlayer insulating layer;
Forming a first connection hole in the interlayer insulating layer;
Forming a second wiring;
Forming a shock absorbing beam having a plurality of openings in a planar structure;
Forming a protective film to cover the active circuit;
Opening a second connection hole in a part of the protective film to connect to the second wiring;
Forming a thick electrode sufficiently covering the shock absorbing beam and connected to the second wiring via a second connection hole;
And a step of covering the active circuit with a protective resin layer having a necessary region opened so as to be bonded to the thick electrode on the shock absorbing beam. 前記保護膜が、シリコン酸化膜とシリコン窒化膜との２層積層膜であることを特徴とする請求項３６に記載の半導体装置の製造方法。   37. The method of manufacturing a semiconductor device according to claim 36, wherein the protective film is a two-layer laminated film of a silicon oxide film and a silicon nitride film. 前記シリコン酸化膜とシリコン窒化膜との２層積層膜は、シリコン酸化膜の成膜後、シリコン酸化膜の被覆形状を緩やかなテーパー形状となるよう乾式エッチング処理を実施した後、シリコン窒化膜を積層することにより形成した２層積層膜であることを特徴とする請求項３７に記載の半導体装置の製造方法。   After the silicon oxide film is formed, the two-layer laminated film of the silicon oxide film and the silicon nitride film is subjected to a dry etching process so that the covering shape of the silicon oxide film becomes a gently tapered shape, and then the silicon nitride film is formed. 38. The method of manufacturing a semiconductor device according to claim 37, wherein the semiconductor device is a two-layer stacked film formed by stacking. 前記衝撃吸収梁に形成する開口の形状が、円形または多角形であることを特徴とする請求項３６から請求項３８のいずれかに記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to any one of claims 36 to 38, wherein a shape of the opening formed in the shock absorbing beam is a circle or a polygon. 前記第２の配線と前記衝撃吸収梁が同一材料から成り且つ、同一工程で加工することを同時に加工する特徴とする請求項３６から請求項３９のいずれかに記載の半導体装置の製造方法。   40. The method of manufacturing a semiconductor device according to claim 36, wherein the second wiring and the shock absorbing beam are made of the same material and are processed in the same process. 前記第２の配線と前記衝撃吸収梁とが、アルミまたはアルミ合金を主たる材料とすることを特徴とする請求項３６から請求項４０のいずれかに記載の半導体装置の製造方法。   41. The method of manufacturing a semiconductor device according to claim 36, wherein the second wiring and the shock absorbing beam are mainly made of aluminum or an aluminum alloy. 前記厚い電極が、アルミ，アルミ合金，銅，ニッケル，クロム，チタン，チタン化合物，チタン合金のいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項３６から請求項４１のいずれかに記載の半導体装置の製造方法。   The thick electrode is formed of any one of aluminum, aluminum alloy, copper, nickel, chromium, titanium, titanium compound, titanium alloy, or a laminated film of two or more of these. 42. A method of manufacturing a semiconductor device according to any one of items 36 to 41. 前記保護樹脂層が、ポリイミド樹脂膜であることを特徴とする請求項３６から請求項４２のいずれかに記載の半導体装置の製造方法。   43. The method of manufacturing a semiconductor device according to claim 36, wherein the protective resin layer is a polyimide resin film. 半導体基板の表面に設けられた能動回路に、能動回路が機能するよう第１の配線を接続する工程と、
層間絶縁層を形成する工程と、
第１の接続孔を前記層間絶縁層に形成する工程と、
第２の配線を形成する工程と、
平面構造において複数の開口を持つ衝撃吸収梁を形成する工程と、
前記能動回路を被覆するよう保護膜を形成する工程と、
前記第２の配線と接続するため前記保護膜の一部に第２の接続孔を開口する工程と、
前記衝撃吸収梁上を十分に被覆し且つ前記第２の接続孔を介して前記第２の配線と接続するよう成形された密着強化金属層を形成する工程と、
厚いパッド電極を形成するためのシード電極層を形成する工程と、
前記衝撃吸収梁上に厚いパッド電極を形成する工程と、
前記厚いパッド電極の上面および全側面を被覆し且つその一部が前記密着強化金属層と前記シード電極層を介して前記保護膜に設けられた前記第２の接続孔により第２の配線と接続されるよう成形された被覆金属配線層を形成する工程と、
前記厚いパッド電極にボンディング接続できるよう必要な領域を開口した保護樹脂層により前記能動回路を被覆する工程と
を備えたことを特徴とする半導体装置の製造方法。 Connecting the first wiring to the active circuit provided on the surface of the semiconductor substrate so that the active circuit functions;
Forming an interlayer insulating layer;
Forming a first connection hole in the interlayer insulating layer;
Forming a second wiring;
Forming a shock absorbing beam having a plurality of openings in a planar structure;
Forming a protective film to cover the active circuit;
Opening a second connection hole in a part of the protective film to connect to the second wiring;
Forming an adhesion-strengthening metal layer formed to cover the shock absorbing beam sufficiently and connect to the second wiring through the second connection hole;
Forming a seed electrode layer for forming a thick pad electrode;
Forming a thick pad electrode on the shock absorbing beam;
The thick pad electrode covers the upper surface and all side surfaces, and part of the thick pad electrode is connected to the second wiring by the second connection hole provided in the protective film via the adhesion reinforcing metal layer and the seed electrode layer. Forming a coated metal wiring layer shaped to be,
And a step of covering the active circuit with a protective resin layer having an opening necessary for bonding connection with the thick pad electrode. 前記保護膜が、シリコン酸化膜とシリコン窒化膜との２層積層膜であることを特徴とする請求項４４に記載の半導体装置の製造方法。   45. The method of manufacturing a semiconductor device according to claim 44, wherein the protective film is a two-layer laminated film of a silicon oxide film and a silicon nitride film. 前記シリコン酸化膜とシリコン窒化膜との２層積層膜は、前記シリコン酸化膜の成膜後、前記シリコン酸化膜の被覆形状を緩やかなテーパー形状となるよう乾式エッチング処理を実施した後、前記シリコン窒化膜を積層した２層積層膜であることを特徴とする請求項４５に記載の半導体装置の製造方法。   After the silicon oxide film is formed, the two-layer laminated film of the silicon oxide film and the silicon nitride film is subjected to a dry etching process so that the covering shape of the silicon oxide film becomes a gently tapered shape, and then the silicon oxide film is formed. 46. The method of manufacturing a semiconductor device according to claim 45, wherein the semiconductor device is a two-layer laminated film in which nitride films are laminated. 前記衝撃吸収梁に形成する開口の形状が、円形または多角形であることを特徴とする請求項４４から請求項４６のいずれかに記載の半導体装置の製造方法。   47. The method of manufacturing a semiconductor device according to claim 44, wherein the shape of the opening formed in the shock absorbing beam is a circle or a polygon. 前記第２の配線と前記衝撃吸収梁が同一材料から成りかつ、同一工程で加工することを同時に加工する特徴とする請求項４４から請求項４７のいずれかに記載の半導体装置の製造方法。   48. The method of manufacturing a semiconductor device according to claim 44, wherein the second wiring and the shock absorbing beam are made of the same material and are processed in the same process. 前記第２の配線と前記衝撃吸収梁とが、アルミまたはアルミ合金を主たる材料とすることを特徴とする請求項４４から請求項４８のいずれかに記載の半導体装置の製造方法。   49. The method of manufacturing a semiconductor device according to claim 44, wherein the second wiring and the shock absorbing beam are mainly made of aluminum or an aluminum alloy. 前記密着強化金属層が、チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項４４から請求項４９のいずれかに記載の半導体装置の製造方法。   50. Any of Claims 44 to 49, wherein the adhesion strengthening metal layer is composed of any one of titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. A method for manufacturing the semiconductor device according to claim 1. 前記シード電極層と前記厚いパッド電極とが、同一材質であることを特徴とする請求項４４から請求項５０のいずれかに記載の半導体装置の製造方法。   51. The method of manufacturing a semiconductor device according to claim 44, wherein the seed electrode layer and the thick pad electrode are made of the same material. 前記厚いパッド電極の製法および材質が、マスク材を用いた電気メッキ法で形成された銅であることを特徴とする請求項４４から請求項５１のいずれかに記載の半導体装置の製造方法。   52. The method of manufacturing a semiconductor device according to claim 44, wherein a method and a material of the thick pad electrode are copper formed by an electroplating method using a mask material. 前記厚いパッド電極の厚さが、前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項４４から請求項５２のいずれかに記載の半導体装置の製造方法。   53. The manufacturing method of a semiconductor device according to claim 44, wherein a thickness of the thick pad electrode is a film thickness equal to or larger than a surface step of the protective film covering the shock absorbing beam. Method. 前記被覆金属配線層が、上層がアルミまたはアルミ合金で構成され、下層がチタン，チタン窒化膜，チタンタングステンのいずれかで構成した積層膜であることを特徴とする請求項４４から請求項５３のいずれかに記載の半導体装置の製造方法。   54. The coated metal wiring layer according to claim 44, wherein the coated metal wiring layer is a laminated film having an upper layer made of aluminum or an aluminum alloy and a lower layer made of titanium, titanium nitride film, or titanium tungsten. The manufacturing method of the semiconductor device in any one. 前記保護樹脂層が、ポリイミド樹脂膜であることを特徴とする請求項４４から請求項５４のいずれかに記載の半導体装置の製造方法。   The method for manufacturing a semiconductor device according to any one of claims 44 to 54, wherein the protective resin layer is a polyimide resin film. 半導体基板の表面に設けられた能動回路に、その能動回路が機能するよう第１の配線を接続する工程と、
層間絶縁層を形成する工程と、
第１の接続孔を前記層間絶縁層に形成する工程と、
第２の配線を形成する工程と、
平面構造において複数の開口を持つ衝撃吸収梁を形成する工程と、
前記能動回路を被覆するよう保護膜を形成する工程と、
前記第２の配線と接続するため第２の接続孔を前記衝撃吸収梁の近傍に開口する工程と、
前記衝撃吸収梁上を十分に被覆し且つ前記第２の接続孔を介して前記第２の配線と接続するよう成形された密着強化金属層を形成する工程と、
前記密着強化金属層を介して前記衝撃吸収梁上に厚いパッド電極を形成する工程と、
前記厚いパッド電極の上面および全側面を被覆し且つその一部が前記密着強化金属層を介して前記保護膜に設けられた前記第２の接続孔により前記第２の配線と接続されるよう成形された被覆金属配線層を形成する工程と、
前記厚いパッド電極にボンディング接続できるよう必要な領域を開口した保護樹脂層により前記能動回路を被覆する工程と
を備えたことを特徴とする半導体装置の製造方法。 Connecting a first wiring to an active circuit provided on a surface of a semiconductor substrate so that the active circuit functions;
Forming an interlayer insulating layer;
Forming a first connection hole in the interlayer insulating layer;
Forming a second wiring;
Forming a shock absorbing beam having a plurality of openings in a planar structure;
Forming a protective film to cover the active circuit;
Opening a second connection hole in the vicinity of the shock absorbing beam for connection to the second wiring;
Forming an adhesion-strengthening metal layer formed to cover the shock absorbing beam sufficiently and connect to the second wiring through the second connection hole;
Forming a thick pad electrode on the shock-absorbing beam via the adhesion-strengthening metal layer;
Formed so as to cover the upper surface and all the side surfaces of the thick pad electrode and to be connected to the second wiring by the second connection hole provided in the protective film through the adhesion reinforcing metal layer. Forming a coated metal wiring layer,
And a step of covering the active circuit with a protective resin layer having an opening necessary for bonding connection with the thick pad electrode. 前記保護膜が、シリコン酸化膜とシリコン窒化膜との２層積層膜であることを特徴とする請求項５６に記載の半導体装置の製造方法。   57. The method of manufacturing a semiconductor device according to claim 56, wherein the protective film is a two-layer laminated film of a silicon oxide film and a silicon nitride film. 前記シリコン酸化膜とシリコン窒化膜との２層積層膜は、前記シリコン酸化膜の成膜後、前記シリコン酸化膜の被覆形状を緩やかなテーパー形状となるよう乾式エッチング処理を実施した後、シリコン窒化膜を積層した２層積層膜であることを特徴とする請求項５７に記載の半導体装置の製造方法。   After the silicon oxide film is formed, the two-layer laminated film of the silicon oxide film and the silicon nitride film is subjected to a dry etching process so that the covering shape of the silicon oxide film becomes a gently tapered shape, and then silicon nitride 58. The method of manufacturing a semiconductor device according to claim 57, wherein the semiconductor device is a two-layer laminated film in which films are laminated. 前記衝撃吸収梁に形成する開口の形状が、円形または多角形であることを特徴とする請求項５６から請求項５８のいずれかに記載の半導体装置の製造方法。   59. The method of manufacturing a semiconductor device according to claim 56, wherein a shape of the opening formed in the shock absorbing beam is a circle or a polygon. 前記第２の配線と前記衝撃吸収梁が同一材料から成りかつ、同一工程で加工することを同時に加工する特徴とする請求項５６から請求項５９のいずれかに記載の半導体装置の製造方法。   60. The method of manufacturing a semiconductor device according to claim 56, wherein the second wiring and the shock absorbing beam are made of the same material and are processed in the same process at the same time. 前記第２の配線と前記衝撃吸収梁とが、アルミまたはアルミ合金を主たる材料とすることを特徴とする請求項５６から請求項６０のいずれかに記載の半導体装置の製造方法。   61. The method of manufacturing a semiconductor device according to claim 56, wherein the second wiring and the shock absorbing beam are mainly made of aluminum or an aluminum alloy. 前記密着強化金属層が、チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項５６から請求項６１のいずれかに記載の半導体装置の製造方法。   62. Any one of claims 56 to 61, wherein the adhesion reinforcing metal layer is composed of titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. A method for manufacturing the semiconductor device according to claim 1. 前記厚いパッド電極が、銅，ニッケルまたはタングステンであることを特徴とする請求項５６から請求項６２のいずれかに記載の半導体装置の製造方法。   The method for manufacturing a semiconductor device according to any one of claims 56 to 62, wherein the thick pad electrode is copper, nickel, or tungsten. 前記厚いパッド電極の厚さが、前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項５６から請求項６４のいずれかに記載の半導体装置の製造方法。   65. The manufacturing method of a semiconductor device according to claim 56, wherein a thickness of the thick pad electrode is equal to or greater than a surface step of the protective film covering the shock absorbing beam. Method. 前記被覆金属配線層が、上層がアルミまたはアルミ合金で構成され、下層がチタン，チタン窒化膜，チタンタングステンのいずれかで構成した積層膜であることを特徴とする請求項５６から請求項６４のいずれかに記載の半導体装置の製造方法。   65. The coated metal wiring layer according to claim 56, wherein the coated metal wiring layer is a laminated film having an upper layer made of aluminum or an aluminum alloy and a lower layer made of titanium, titanium nitride film, or titanium tungsten. The manufacturing method of the semiconductor device in any one. 前記被覆金属配線層の下層を形成する材料が、前記密着強化金属層と同一材料であることを特徴とする請求項５６から請求項６５のいずれかに記載の半導体装置の製造方法。   66. The method of manufacturing a semiconductor device according to claim 56, wherein a material forming a lower layer of the coated metal wiring layer is the same material as that of the adhesion reinforcing metal layer. 前記保護樹脂層が、ポリイミド樹脂膜であることを特徴とする請求項５６から請求項６６のいずれかに記載の半導体装置の製造方法。   67. The method of manufacturing a semiconductor device according to claim 56, wherein the protective resin layer is a polyimide resin film. 半導体基板の表面に設けられた能動回路に、その能動回路が機能するよう第１の配線を接続する工程と、
層間絶縁層を形成する工程と、
第１の接続孔を層間絶縁層に形成する工程と、
第２の配線を形成する工程と、
平面構造において複数の開口を持つ衝撃吸収梁を形成する工程と、
前記能動回路を被覆するよう保護膜を形成する工程と、
前記衝撃吸収梁に隣接する位置の前記保護膜の一部に前記第２の配線と接続するため第２の接続孔を開口する工程と、
前記衝撃吸収梁上を十分に被覆し且つ前記第２の接続孔を介して前記第２の配線と接続するよう成形された密着強化金属層を形成する工程と、
前記衝撃吸収梁上を十分に被覆するよう前記保護膜上に形成され且つその一部が前記保護膜に設けられた前記第２の接続孔を介して前記第２の配線と接続するよう厚いパッド電極を形成する工程と、
前記厚いパッド電極下部以外のシード電極層を除去する工程と、
前記厚いパッド電極の上面および全側面を被覆するよう被覆金属配線層を形成する工程と、
前記保護膜に設けられた第３の接続孔を介して前記衝撃吸収梁と接続されるよう最上層配線を形成する工程と、
前記厚いパッド電極にボンディング接続できるよう必要な領域を開口した保護樹脂層により前記能動回路を被覆する工程と
を備えたことを特徴とする半導体装置の製造方法。 Connecting a first wiring to an active circuit provided on a surface of a semiconductor substrate so that the active circuit functions;
Forming an interlayer insulating layer;
Forming a first connection hole in the interlayer insulating layer;
Forming a second wiring;
Forming a shock absorbing beam having a plurality of openings in a planar structure;
Forming a protective film to cover the active circuit;
Opening a second connection hole to connect the second wiring to a part of the protective film at a position adjacent to the shock absorbing beam;
Forming an adhesion-strengthening metal layer formed to cover the shock absorbing beam sufficiently and connect to the second wiring through the second connection hole;
A thick pad formed on the protective film so as to sufficiently cover the shock absorbing beam and a part thereof being connected to the second wiring via the second connection hole provided in the protective film. Forming an electrode;
Removing the seed electrode layer other than the bottom of the thick pad electrode;
Forming a coated metal wiring layer so as to cover the upper surface and all side surfaces of the thick pad electrode;
Forming a top layer wiring to be connected to the shock absorbing beam via a third connection hole provided in the protective film;
And a step of covering the active circuit with a protective resin layer having an opening necessary for bonding connection with the thick pad electrode. 前記保護膜が、シリコン酸化膜とシリコン窒化膜との２層積層膜であることを特徴とする請求項６８に記載の半導体装置の製造方法。   69. The method of manufacturing a semiconductor device according to claim 68, wherein the protective film is a two-layer laminated film of a silicon oxide film and a silicon nitride film. 前記シリコン酸化膜とシリコン窒化膜との２層積層膜は、前記シリコン酸化膜の成膜後、前記シリコン酸化膜の被覆形状を緩やかなテーパー形状となるよう乾式エッチング処理を実施した後、シリコン窒化膜を積層した２層積層膜であることを特徴とする請求項６９に記載の半導体装置の製造方法。   After the silicon oxide film is formed, the two-layer laminated film of the silicon oxide film and the silicon nitride film is subjected to a dry etching process so that the covering shape of the silicon oxide film becomes a gently tapered shape, and then silicon nitride 70. The method of manufacturing a semiconductor device according to claim 69, wherein the semiconductor device is a two-layer laminated film in which films are laminated. 前記衝撃吸収梁に形成する開口の形状が、円形または多角形であることを特徴とする請求項６８から請求項７０のいずれかに記載の半導体装置の製造方法。   71. The method of manufacturing a semiconductor device according to claim 68, wherein a shape of the opening formed in the shock absorbing beam is a circle or a polygon. 前記第２の配線と前記衝撃吸収梁が同一材料から成りかつ、同一工程で加工することを同時に加工する特徴とする請求項６８から請求項７１のいずれかに記載の半導体装置の製造方法。   72. The method of manufacturing a semiconductor device according to claim 68, wherein the second wiring and the shock absorbing beam are made of the same material and are processed in the same process. 前記第２の配線と前記衝撃吸収梁とが、アルミまたはアルミ合金を主たる材料とすることを特徴とする請求項６８から請求項７２のいずれかに記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to any one of claims 68 to 72, wherein the second wiring and the shock absorbing beam are mainly made of aluminum or an aluminum alloy. 前記密着強化金属層が、チタン，チタン窒化膜，チタンタングステンのいずれか、または、これらのうちの２以上のものの積層膜で構成されていることを特徴とする請求項６８から請求項７３のいずれかに記載の半導体装置の製造方法。   74. Any one of claims 68 to 73, wherein the adhesion reinforcing metal layer is composed of any one of titanium, titanium nitride film, titanium tungsten, or a laminated film of two or more of these. A method for manufacturing the semiconductor device according to claim 1. 前記シード電極層と前記厚いパッド電極とが、同一材質であることを特徴とする請求項６８から請求項７４のいずれかに記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to any one of claims 68 to 74, wherein the seed electrode layer and the thick pad electrode are made of the same material. 前記厚いパッド電極の製法および材質が、マスク材を用いた電気メッキ法で形成された銅であることを特徴とする請求項６８から請求項７５のいずれかに記載の半導体装置の製造方法。   76. The method of manufacturing a semiconductor device according to claim 68, wherein a method and a material of the thick pad electrode are copper formed by an electroplating method using a mask material. 前記厚いパッド電極の厚さが、前記衝撃吸収梁を被覆する前記保護膜の表面段差以上の膜厚であることを特徴とする請求項６８から請求項７６のいずれかに記載の半導体装置の製造方法。   77. The method of manufacturing a semiconductor device according to claim 68, wherein the thickness of the thick pad electrode is a film thickness equal to or greater than a surface step of the protective film covering the shock absorbing beam. Method. 前記シード電極層を除去する工程が、前記厚いパッド電極の形成時とは逆の電界印加方法による電気分解処理と湿式エッチング処理とを複合した処理であることを特徴とする請求項７６または請求項７７に記載の半導体装置の製造方法。   76. The process according to claim 76, wherein the step of removing the seed electrode layer is a process in which an electrolysis process using an electric field application method opposite to the formation of the thick pad electrode and a wet etching process are combined. 77. A method for manufacturing a semiconductor device according to 77. 前記被覆金属配線層が、上層がアルミまたはアルミ合金で構成され、下層がチタン，チタン窒化膜，チタンタングステンのいずれかで構成した積層膜であることを特徴とする請求項６８から請求項７８のいずれかに記載の半導体装置の製造方法。   79. The coated metal wiring layer according to claim 68, wherein an upper layer is made of aluminum or an aluminum alloy, and a lower layer is a laminated film made of titanium, titanium nitride film, or titanium tungsten. The manufacturing method of the semiconductor device in any one. 前記最上層配線が、前記密着強化金属層と前記被覆金属配線層の積層構造であることを特徴とする請求項６８から請求項７９のいずれかに記載の半導体装置の製造方法。   80. The method of manufacturing a semiconductor device according to claim 68, wherein the uppermost layer wiring has a laminated structure of the adhesion reinforcing metal layer and the coated metal wiring layer. 前記保護樹脂層が、ポリイミド樹脂膜であることを特徴とする請求項６８から請求項７９のいずれかに記載の半導体装置の製造方法。

80. The method of manufacturing a semiconductor device according to claim 68, wherein the protective resin layer is a polyimide resin film.

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