JP2007096279A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007096279A5 JP2007096279A5 JP2006225479A JP2006225479A JP2007096279A5 JP 2007096279 A5 JP2007096279 A5 JP 2007096279A5 JP 2006225479 A JP2006225479 A JP 2006225479A JP 2006225479 A JP2006225479 A JP 2006225479A JP 2007096279 A5 JP2007096279 A5 JP 2007096279A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- substrate
- circuit device
- recess
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 18
- 239000000463 material Substances 0.000 claims 11
- 230000017525 heat dissipation Effects 0.000 claims 5
- 239000011521 glass Substances 0.000 claims 2
- 229910052904 quartz Inorganic materials 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
Claims (12)
前記凹部には、放熱性材料が充填されていることを特徴とする集積回路装置。 On one surface an integrated circuit is provided, comprising a substrate having a recess on the other side,
The front Symbol recess, the integrated circuit device heat dissipation material is characterized in that it is filled.
前記複数の基板のうち少なくとも１つの基板は、一方の面に集積回路が設けられ、他方の面に凹部を有し、
前記凹部には、放熱性材料が充填されていることを特徴とする集積回路装置。 Having a plurality of stacked substrates,
At least one substrate of the plurality of substrates, integrated circuits are provided on one surface, has a recess on the other side,
The front Symbol recess, the integrated circuit device heat dissipation material is characterized in that it is filled.
少なくとも前記凹部の表面には、放熱性材料を含む膜が設けられていることを特徴とする
集積回路装置。 On one surface an integrated circuit is provided, comprising a substrate having a recess on the other side,
On the surface of the recess even without low, integrated circuit device, wherein a film containing a heat dissipation material is provided.
前記複数の基板のうち少なくとも１つの基板は、一方の面に集積回路が設けられ、他方の面に凹部を有し、
少なくとも前記凹部の表面には、放熱性材料を含む膜が設けられていることを特徴とする集積回路装置。 Having a plurality of stacked substrates,
At least one substrate of the plurality of substrates, integrated circuits are provided on one surface, has a recess on the other side,
On the surface of the recess even without low, integrated circuit device, wherein a film containing a heat dissipation material is provided.
前記他方の面は、前記一方の面よりも表面積が大きいことを特徴とする集積回路装置。The integrated circuit device, wherein the other surface has a surface area larger than that of the one surface.
前記複数の基板のうち少なくとも１つの基板には、放熱部が設けられていることを特徴とする集積回路装置。 In claim 2 or claim 4,
An integrated circuit device, wherein a heat radiating portion is provided on at least one of the plurality of substrates.
前記放熱部は、前記基板の端部に設けられていることを特徴とする集積回路装置。The integrated circuit device, wherein the heat radiating portion is provided at an end portion of the substrate.
前記放熱部に凹部が設けられていることを特徴とする集積回路装置。An integrated circuit device, wherein the heat radiating portion is provided with a recess.
前記放熱性材料は、前記基板を構成する材料よりも熱伝導率が高い材料であることを特徴
とする集積回路装置。 In any one of claims 1 to 8,
The integrated circuit device, wherein the heat dissipating material is a material having a higher thermal conductivity than a material constituting the substrate.
前記基板は、ガラス基板または石英基板であり、
前記放熱性材料は、２０℃における熱伝導率が２Ｗ／（ｍ・Ｋ）以上の材料であることを
特徴とする集積回路装置。 In any one of Claims 1 thru | or 9 ,
The substrate is a glass substrate or a quartz substrate;
The integrated circuit device, wherein the heat dissipating material is a material having a thermal conductivity of 2 W / (m · K) or more at 20 ° C.
前記基板は、ガラス基板または石英基板であり、The substrate is a glass substrate or a quartz substrate;
前記放熱性材料は、Ｓｉ、金属、合金、窒化アルミニウム、グラファイト、窒化珪素、またはこれらをポリマー中に混合した材料であることを特徴とする集積回路装置。The integrated circuit device is characterized in that the heat dissipation material is Si, metal, alloy, aluminum nitride, graphite, silicon nitride, or a material obtained by mixing these in a polymer.
前記基板の厚さは１００μｍ以下であることを特徴とする集積回路装置。 In any one of Claims 1 to 11 ,
An integrated circuit device, wherein the substrate has a thickness of 100 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006225479A JP5137356B2 (en) | 2005-09-02 | 2006-08-22 | Integrated circuit device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005254481 | 2005-09-02 | ||
| JP2005254481 | 2005-09-02 | ||
| JP2006225479A JP5137356B2 (en) | 2005-09-02 | 2006-08-22 | Integrated circuit device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007096279A JP2007096279A (en) | 2007-04-12 |
| JP2007096279A5 true JP2007096279A5 (en) | 2009-09-10 |
| JP5137356B2 JP5137356B2 (en) | 2013-02-06 |
Family
ID=37981542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006225479A Expired - Fee Related JP5137356B2 (en) | 2005-09-02 | 2006-08-22 | Integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5137356B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4973328B2 (en) * | 2007-06-14 | 2012-07-11 | 株式会社デンソー | Semiconductor device |
| CN102576735B (en) | 2009-09-30 | 2016-01-20 | 大日本印刷株式会社 | The manufacture method of flexible device substrate, flexible device thin film transistor base plate, flexible device, thin-film component substrate, thin-film component, thin-film transistor, the manufacture method of thin-film component substrate, the manufacture method of thin-film component and thin-film transistor |
| US20110186899A1 (en) * | 2010-02-03 | 2011-08-04 | Polymer Vision Limited | Semiconductor device with a variable integrated circuit chip bump pitch |
| JP2011233858A (en) * | 2010-04-09 | 2011-11-17 | Dainippon Printing Co Ltd | Method for manufacturing substrate for thin film element, method for manufacturing thin film element, method for manufacturing thin film transistor, thin film element and thin film transistor |
| JP2014082253A (en) * | 2012-10-15 | 2014-05-08 | Nippon Hoso Kyokai <Nhk> | Lamination type semiconductor device, semiconductor chip, and method of manufacturing lamination type semiconductor device |
| US20220037778A1 (en) * | 2018-12-25 | 2022-02-03 | Toray Industries, Inc. | Method for manufacturing wireless communication device, wireless communication device, and assembly of wireless communication devices |
| KR20220096469A (en) | 2020-12-31 | 2022-07-07 | 엘지디스플레이 주식회사 | Display apparatus comprising overlapped pixel driving circuits |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3506054B2 (en) * | 1999-07-23 | 2004-03-15 | 日本電気株式会社 | Semiconductor device and method of manufacturing semiconductor device |
| JP2002246514A (en) * | 2001-02-14 | 2002-08-30 | Fuji Electric Co Ltd | Semiconductor device |
| JP4483123B2 (en) * | 2001-05-07 | 2010-06-16 | ソニー株式会社 | Three-dimensional semiconductor chip and manufacturing method thereof |
| JP3791459B2 (en) * | 2002-05-27 | 2006-06-28 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
| JP4238998B2 (en) * | 2004-03-18 | 2009-03-18 | セイコーエプソン株式会社 | Electrical device |
-
2006
- 2006-08-22 JP JP2006225479A patent/JP5137356B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007096279A5 (en) | ||
| JP2011508456A5 (en) | ||
| TW200910539A (en) | Heat radiation package and semiconductor device | |
| JP2011249684A5 (en) | ||
| JP2008159995A (en) | Heat sink | |
| WO2014204828A2 (en) | Thermal interface nanocomposite | |
| JP2012164956A5 (en) | ||
| TWM317745U (en) | Improved structure of heat sink | |
| JP2010287866A5 (en) | ||
| TWM298324U (en) | Coating-type heat-dissipating device | |
| TWM438651U (en) | Stacked type heat dissipation module of electronic device | |
| EP1715732A3 (en) | Printed circuit board structure having a layer at one of its surfaces for dissipating heat by convection | |
| JP7288101B2 (en) | Heat-conducting structures and electronic devices | |
| JP2012129379A (en) | Radiation fin | |
| WO2017079889A1 (en) | Thermally conductive adhesive, heat dissipation device of communication terminal and communication terminal | |
| TWI544866B (en) | Heat dissipation device | |
| TWM406259U (en) | Package substrate of light emitting diode having a double-sided DLC film | |
| TWI321441B (en) | Heat dissipation module | |
| TWM538240U (en) | Heat dissipation sheet for integrated circuit | |
| TW202014838A (en) | Conductive lid and semiconductor device package | |
| TW200427393A (en) | Heat sink | |
| JP2011514663A5 (en) | ||
| TWM440536U (en) | Semiconductor chip heat dissipation substrate and semiconductor chip package structure | |
| JP2011014837A5 (en) | ||
| TW200905903A (en) | Improved heat dissipation structure of solar cell |