JP3506054B2 - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a structure of a heat dissipation mechanism in a semiconductor device including a semiconductor element having a heat generating effect and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device formed by mounting a semiconductor element or the like on a substrate, how to dissipate heat generated from the semiconductor element has been an important technical problem. Particularly in a semiconductor device using a circuit element such as a transistor having a large power, the problem of heat radiation is particularly important.

On the other hand, in recent years, the size of semiconductor devices has been in the direction of downsizing to make them smaller, and therefore it is becoming increasingly difficult to secure a space that can be used for heat dissipation.

Here, in general, conventionally, when manufacturing the semiconductor device 100, as shown in FIG. 13, after the silicon oxide film 1 is formed on the glass substrate 20, the silicon oxide film 1 is formed. Since the desired semiconductor element 30 is directly mounted and formed on the upper surface of the semiconductor element 30 and therefore the silicon oxide film / glass substrate having a poor thermal conductivity is present, there is no place for heat to escape from the element 30. There is a problem that heat is accumulated in a narrow element, which causes a temperature rise of the semiconductor element 30 itself.

It should be noted that the structure of the semiconductor device 100 in the case where a transistor is used as the semiconductor element 30 in FIG. 13 will be briefly explained. A diffusion layer is formed on the silicon oxide film 1 described above. A polysilicon film 2 as a conductive film is formed, and a gate oxide film 5 is further formed on the polysilicon film 2.

Next, a gate electrode 6 is arranged on the gate oxide film 5 in a region where the semiconductor element 30 is to be formed, and the gate oxide film 5 and the gate electrode 6 are appropriately separated by an interlayer oxide film 7. Then, the contact hole 4 penetrating the interlayer oxide film 7 and the gate oxide film 5 in the portion corresponding to the source / drain region of the transistor 30.
And a source electrode 8 and a drain electrode 9 are formed by burying a conductive member in the contact hole 4.

Due to the above structure, the semiconductor element 3
Since the temperature of the semiconductor element rises due to the heat generated from 0,
As a result, the semiconductor element is deteriorated or destroyed, and particularly when the semiconductor element is a circuit element having high power, the influence thereof is becoming particularly large.

In recent years, a thin film transistor (TFT) has been used as an example of the semiconductor element 30, and when amorphous silicon is polycrystallized in the process of forming such a TFT. There is also a problem that the characteristics of the transistor are deteriorated unless the temperature rise due to the heating means such as the laser used is prevented.

As a method for solving such a problem, for example, in Japanese Patent Laid-Open No. 5-21344, there is a substrate and a TFT.
There is disclosed a constitution in which a heat sink layer is provided between the heat sink layer and the polycrystalline semiconductor layer constituting the above-mentioned JP-A-4-32387.
No. 6 discloses a configuration in which a thin film having high thermal conductivity is arranged between a substrate and a transistor in a thin film transistor, but in any known example, the substrate or the silicon oxide film itself is disclosed. There is no disclosure regarding a technique of forming a groove-shaped heat dissipation path.

Further, in Japanese Patent Laid-Open No. 5-206468,
Similarly, when a thin film transistor is formed, a thin film layer having high thermal conductivity is arranged on a substrate, and a structure is shown in which a transistor is formed directly on or through an insulating film. However, there is no disclosure regarding a technique for forming a groove-shaped heat dissipation path on the substrate or the silicon oxide film itself.

Further, Japanese Unexamined Patent Publication No. 6-177386 discloses a structure in which, when forming a thin film transistor, a heat dissipation layer is formed on an upper surface of a TFT made of polysilicon formed on a substrate via an interlayer insulating film. However, the known example does not disclose a technique of forming a groove-shaped heat dissipation path in the substrate or the silicon oxide film itself.

Similarly, Japanese Patent Laid-Open No. 9-293870 discloses a semiconductor device in which an electrically insulating film is provided on a substrate and a polycrystalline silicon film forming a thin film transistor is formed on the electrically insulating film. Although a configuration of a semiconductor device in which an electrically conductive film having high thermal conductivity is arranged between the substrate and the electrically insulating film is disclosed, the known example discloses a substrate or a silicon oxide film. There is no disclosure regarding a technique for forming a groove-shaped heat dissipation path in itself.

[0013]

SUMMARY OF THE INVENTION Therefore, the object of the present invention is to improve the above-mentioned drawbacks of the prior art, to effectively dissipate heat generated from a semiconductor device formed on a substrate, and Suppresses the rise in temperature, thereby
The present invention provides a semiconductor device capable of effectively preventing damage and destruction of a semiconductor element and deterioration of characteristics due to the heat, and a manufacturing method thereof.

[0014]

In order to achieve the above-mentioned object, the present invention adopts the technical constitution as described below.

That is, a first aspect of the present invention is a semiconductor device in which a semiconductor element made of polysilicon having a heat generating action is formed on an appropriate oxide film, and a semiconductor device forming region or At least a part of the oxide film portion facing the vicinity region is provided with a heat dissipation groove portion filled with a metal having good heat conductivity , and at least a part of a lower portion of the heat dissipation groove portion is a flat heat dissipation plate portion. According to a second aspect of the present invention, a semiconductor element made of polysilicon having a heat generating effect is formed on an appropriate oxide film. In manufacturing a semiconductor device, a step of burying and forming a flat plate-shaped heat dissipation plate portion made of a metal having good thermal conductivity in an appropriate oxide film, the flat plate is formed on the first surface of the oxide film. Forming a groove so as to abut at least a part of the heat dissipation plate portion of the shape, forming a groove portion connected to each other through the flat heat dissipation plate portion, a step of embedding a metal having good thermal conductivity in the groove portion, A step of arranging so that at least a part of the heat generating surface of the semiconductor element made of polysilicon abuts at least a part of the groove on the surface of the oxide film on which the groove is formed. And a semiconductor device manufacturing method.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Since the semiconductor device and the method for manufacturing the semiconductor device according to the present invention employ the technical structure as described above, a large surface area is provided under the circuit element having a large power, and Since the structure for releasing the heat generation is provided, the heat from the element can be effectively released, and the temperature rise of the element can be suppressed.

Further, according to the present invention, a groove filled with Si, SiC, Al or the like having a high thermal conductivity is provided below a semiconductor element having heat generating properties such as a TFT, a resistor and a diode. , The heat generated from the element is conducted to the filling material of this groove, and as a result, the volume of the heat conducting material is expanded and the heat capacity is increased, and the surface area is also increased, which facilitates the escape of heat to the surroundings. Thus, the temperature rise of the semiconductor element can be suppressed.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a specific example of a semiconductor device and a method for manufacturing a semiconductor device according to the present invention will be described in detail below with reference to the drawings.

That is, FIG. 1 is a sectional view for explaining the structure of a specific example of the semiconductor device 100 according to the present invention. In the drawing, a semiconductor element 3 having a heat generating action on an appropriate oxide film 1 is shown.
In the semiconductor device 100 in which 0 is formed, the heat dissipation groove portion 10 is provided in at least a part of the oxide film 1 portion facing the formation region of the semiconductor element 30 or a region in the vicinity thereof. Has been done.

As the semiconductor element 30 having heat generating property used in the semiconductor device 100 according to the present invention, for example, a transistor, a resistor, a diode or the like is used. It is also desirable to use TFT).

In the present invention, the semiconductor element 30 is formed on the oxide film 1.
Is preferably a silicon oxide film, for example.

Further, in the present invention, the oxide film 1
May constitute the glass substrate 20 itself.

Therefore, in the present invention, the semiconductor element 30 may be directly formed on the glass substrate 20, or may be formed on the silicon oxide film 1 as the oxide film. It may be one.

Similarly, in the present invention, the glass substrate 2
The semiconductor element 30 may be formed on the oxide film 1 formed on the silicon oxide film 1, for example, the silicon oxide film 1.

In the present invention, the silicon oxide film 1 and the glass substrate 20 have substantially the same composition and characteristics, and the heat conduction characteristics are substantially the same. Therefore, in the following description, The laminated structure of the silicon oxide film 1 and the glass substrate 20 will be simply referred to as the silicon oxide film 1.

Therefore, in the following description, for example, when the heat dissipation groove 10 is formed in the silicon oxide film 1, the heat dissipation groove 10 may be formed only in the oxide film 1 at the same time. In some cases, the silicon oxide film 1 may be penetrated to reach a part of the glass substrate 20.

Further, in the present invention, the glass substrate 2 concerned
When the semiconductor element 30 is directly formed on the substrate 0, the heat dissipation groove 10 may be formed only on the glass substrate 20.

On the other hand, in the present invention, the heat dissipation groove portion 1 is provided.
0 is required to be embedded with a material 16 having good thermal conductivity, and metal 1 to be embedded in the heat dissipation groove portion 10 is required.
6 is, for example, Si, SiC, Al, W, WSi
It is hoped that it is one selected from materials such as.

It is also preferable that the surface of the metal 16 embedded in the heat dissipation groove 10 in the semiconductor device 100 according to the present invention is further covered with a silicon oxide film 14.

In the semiconductor device 100 according to the present invention, the heat dissipation groove portion 10 provided for improving the heat dissipation effect of the semiconductor element 30 has a high heat generation effect in the formation region 40 of the semiconductor element 30. It is preferable to provide it in the inside 50 of the oxide film 1 region facing the portion.

That is, as a first aspect of the present invention, in the portion of the semiconductor element 30, the oxide film portion 1 or the glass which faces the peripheral region centering on the portion having the highest heat generation amount. It is preferable that at least one, and preferably a plurality of the heat dissipation grooves 10 be formed in a region of the substrate 20.

On the other hand, as a second aspect of the present invention, the heat dissipation groove portion 10 affects the crystallinity of the constituent material of the semiconductor element in the vicinity of the central portion of the formation region 40 of the semiconductor element 30. Is provided, the heat dissipation groove 10 is provided inside the oxide film 1 facing the vicinity of the peripheral edge of the formation region 40 of the semiconductor element 30 except near the center of the formation region 40 of the semiconductor element 30. It is a thing.

Further, in the present invention, the shape, the number, the arrangement pattern, etc. of the heat dissipation groove portions 10 are not particularly limited, but have a predetermined depth, the number, the arrangement formation density, etc. Moreover, it is desirable that the oxide film 1 is formed in the oxide film 1 so as to have a predetermined pattern shape.

Further, the semiconductor device 100 according to the present invention.
It is also preferable that at least a part of the heat dissipation groove portion 10 in the above is configured in combination with the flat heat dissipation plate portion 13 formed in the oxide film 1.

The semiconductor device 10 according to the present invention will be described below.
A more detailed configuration of 0 will be described with reference to the drawings in the form of an embodiment.

That is, as shown in FIG. 13, the glass substrate 2
0, IC, LSI, for example, via a silicon oxide film 1.
In recent years, it has been attempted to form an integrated circuit like this and provide a driving circuit for an LCD, an EL, a light valve, etc. to reduce costs by reducing the number of parts and improve reliability by reducing connection points. There is.

Further, it is also considered to reduce the cost by independently forming it on the glass substrate 20 like an ordinary IC or LSI.

However, the glass substrate 20 is made of silicon Si.
Thermal conductivity of 100W / mK, 1.1W / mK
The thermal conductivity is poor, and the heat generated from the semiconductor element 30 accumulates without escaping, causing a temperature rise, which leads to deterioration or destruction of the semiconductor device. Therefore, as in the present invention, it is important to form the heat dissipation structure 10 for prompting heat dissipation in the glass substrate 20.

An example of a method of manufacturing a semiconductor device in which the heat dissipation groove 10 is formed in the substrate 20 or the silicon oxide film 1 is shown below.

Usually, the glass substrate 20 is covered with the silicon oxide film 1 in order to prevent contamination from glass, but the silicon oxide film 1 and the glass substrate 20 are made of the same substance and have the same thermal conductivity. Therefore, both the silicon oxide film 1 and the glass substrate 20 will be collectively referred to as the silicon oxide film 1 below. (See FIG. 2 (A) refer) Next, as shown in FIG. 2 (B), the silicon oxide film 1, for example, using anisotropic etching by RIE device
The heat dissipation groove 10 is provided.

As shown in FIG. 2C, the heat dissipation groove 10 is
The radiating groove 10 is formed by filling with one material having a high thermal conductivity selected from Si, Al, SiC, W, WSi and the like.

The filling method is a CVD method, for example, Si.
Then, a-Si (amorphous Si) is vapor-deposited and buried, and then CMP (chemical mechanical polish) is performed.
ing) to remove the unnecessary film and flatten it.

As another method, there is an etch-back method, in which the filling film is grown thick and then the recess is formed into a coating film (SOG).
-Spin on glass) and then dry etching to remove unnecessary films by etching from above.

After that, as shown in FIG. 2C and thereafter, the semiconductor element 30 is formed by a usual method.

Here, a TFT is used as the semiconductor element 30.
2C, the amorphous silicon (a-Si) film 2 is first formed on the surface of the silicon oxide film 1 in which the heat dissipation groove 10 is formed, as shown in FIG. 2C. Is grown, and the amorphous silicon (a-Si) is irradiated by laser irradiation with an ELA (excimer laser annealing) device.
The film 2 is polysilicon (p-Si) which is polycrystalline silicon.
Convert to 2.

At this time, when the amorphous silicon a-Si film 2 is grown, the impurity boron can be introduced into the region corresponding to the channel of the TFT simultaneously with the growth.

After that, after forming the first gate oxide film 3 on the polysilicon (p-Si) film layer 2, the polysilicon is patterned from the first gate oxide film 3 to form each semiconductor element. Form 30 prototypes.

After that, as shown in FIG. 2D, a region (S) forming a source region and a drain region of the transistor is formed.
It is desirable that a diffusion layer is formed by injecting a predetermined impurity also into (D). For example, the source-drain is heavily doped with phosphorus by an ion doping apparatus, and if necessary, a second gate oxide film is grown to form the gate oxide film 5.

Further, a conductive material to be a gate electrode is deposited on the gate oxide film 5 to form a gate electrode 6. As the material of the gate electrode 6, it is desirable to use a high melting point material such as silicon, silicide, W or WSi.

After that, LD is further formed in a desired region.
Phosphorus or boron for forming D (Light Doped Drain) is introduced into the polysilicon layer 2 by ion implantation or another method, or impurities such as boron are introduced into the SD, and then the doped impurities are annealed. The activation operation may be executed.

The processing temperature in this operation is usually 90.
The temperature is around 0 ° C, but in the recent low temperature TFT process, 5
It is around 00 ° C. Further, in order to stabilize the TFT characteristics, a hydrogenation process may be performed thereafter.

Next, as shown in FIG. 2E, the contact hole 4 is formed at a desired position such as the source and drain regions (SD).
Is formed by RIE or WET etching,
As shown in (F), an appropriate metal is buried in the contact hole 4 to form the source electrode 8 and the drain electrode 9, and the respective semiconductor elements 30 are connected to complete the process.

The metal buried in the contact hole 4 is, for example, aluminum containing silicon,
Copper or the like is used.

That is, in the present invention, since the above-mentioned structure is adopted, conventionally, the semiconductor element 3 which requires power is required.
In the case of 0, since the substrate 20 is an oxide film, the thermal conductivity is two orders of magnitude smaller than that of silicon, and the heat radiation effect is small, so heat is accumulated by the heat generated from the semiconductor element 30. Therefore, the temperature of the semiconductor element 30 rises.

The temperature of the semiconductor element 30 depends on the area of the semiconductor element 30, and the larger the area is, the more there is no escape area for heat in the central portion of the semiconductor element 30, resulting in an increase in temperature. The temperature of the semiconductor element 30 is sometimes 200-300.
Since the temperature may rise to 0 ° C., the semiconductor element 30 itself may be deteriorated or destroyed.

For example, when the width of the TFT is about 10 μm and the temperature is increased by 60 ° C. under the condition of the same current density, the temperature may be increased up to 250 ° C. when the width is 100 μm, and the heat is effective. In order to escape to, it is important to create a heat escape area.

Therefore, the region most suitable for easily and effectively forming the heat dissipation structure in the substrate 20 or the oxide film on the substrate 20, for example, the silicon oxide film 1 is the oxide film under the semiconductor element 30. Becomes

By using the trench process used in the semiconductor process technology, the heat dissipation groove (trench) 10 can be easily formed in the device manufacturing process.

A material having a high thermal conductivity is used as the filling material of the trench, and for example, silicon or Si is used.
C, W, WSi and the like.

The heat generated in the semiconductor element portion is transferred to the filling material of the groove 10, that is, the temperature rise in the semiconductor element region is suppressed, so that the element is not deteriorated or destroyed by the heat.

In the present invention, the groove 10 for heat dissipation provided in the lower portion of the semiconductor element 30 immediately takes in the heat generated in the element region 40 into the filling material inside, and the entire semiconductor element including the semiconductor element 30. The increase in heat capacity disperses the heat generated in the semiconductor element 30, so that the temperature rise of the semiconductor element itself slows down.

At the same time, since the surface area of the heat radiating groove 10 as the heat radiating means is increased, the heat radiating effect is proportionally increased by the increase in the surface area.

For example, when the surface area is 100 times, even an oxide film having a thermal conductivity of 1/100 of silicon has the same heat dissipation effect as silicon. The temperature rise of the element can be suppressed by these two effects.

For example, in an element having a large semiconductor element area and easily accumulating heat inside the semiconductor element, in particular, the heat dissipation groove 10 provided under the semiconductor element is increased due to the larger semiconductor element area, thereby suppressing the temperature rise. Also grows.

The semiconductor device 100 according to the present invention described above.
In the specific example, the shape, number, size, arrangement pattern, etc. of the heat dissipation groove 10 are not particularly limited,
The semiconductor element 30 used in the semiconductor device 100.
It is possible to appropriately determine the size, number, density, etc. of the power of the.

As shown in FIG. 1, it is also preferable that the heat dissipation groove 10 has a rectangular cross section having a major axis in a direction orthogonal to the surface of the substrate 20 of the semiconductor device 100.

Further, the depth or formation density of the heat dissipation groove 10 in the direction orthogonal to the surface of the substrate 20 is not particularly limited, and can be appropriately determined.

Further, as an example of the planar arrangement pattern of the heat dissipation grooves 10, the patterns shown in FIGS. 7 to 9 can be arbitrarily used.

Next, the semiconductor device 100 according to the present invention.
Another specific example will be described in detail with reference to the drawings.

FIG. 3 is a cross-sectional view showing the configuration of the second specific example of the semiconductor device 100 according to the present invention. In the second specific example, as is apparent from FIG.
On the other hand, the structure is such that the effect of further suppressing the temperature rise of the semiconductor element 30 is increased by further increasing the volume and surface area of the heat dissipation means.

That is, in this example, the heat dissipation groove 1 is
0 and a radiating plate 13 which is orthogonal to the longitudinal direction of the radiating groove 10, that is, a flat plate-shaped radiating plate 13 formed in a horizontal method are combined.

In order to configure the heat dissipation means, first, before the trench process for forming the heat dissipation groove 10 described above, a material having good thermal conductivity (eg, silicon or SiC) is formed on the substrate 20. , W, WSi, etc.) and patterned into a desired shape to form a flat heat dissipation layer 13.

After that, the substrate 20 and the plate-shaped heat dissipation layer 13 are entirely covered with the silicon oxide film 1, and the same trench process as described above is performed to complete the heat dissipation groove 10.

Subsequent steps are the same as the steps in the above-mentioned first specific example.

The thickness, area, arrangement position, etc. of the flat plate-shaped heat dissipation layer 13 in the second specific example are not particularly limited, and the thickness of the semiconductor element 30 used in the semiconductor device 100 is not particularly limited. The magnitude, number, density, etc. of power can be taken into consideration and appropriately determined.

Next, the semiconductor device 100 according to the present invention.
A third specific example of the above will be described with reference to FIG.

That is, FIG. 4 shows an ELA processing step for converting amorphous silicon into polysilicon when a heat radiation groove is generally provided in the channel portion (under the main gate) of the semiconductor element 30, which is required from the lower portion of the semiconductor element 30. Such heat may escape and deteriorate the quality of the polysilicon film, which may adversely affect the TFT characteristics (determined by the margin taken during circuit design).

As a countermeasure, when the heat dissipation groove 10 is buried by using the material 15 having high thermal conductivity in the groove portion 10 formed by the trench process, silicon is further provided on the material 15 having high heat conductivity. By forming the oxide film 14 and completing the burying process, it is possible to suppress the heat conduction to some extent.

In this specific example, the depth of the heat dissipation groove 10 and the depth of the material 15 having a high thermal conductivity to be embedded in the groove portion 10 are adjusted by considering the deterioration of the TFT characteristics in advance. be able to.

On the other hand, FIG. 5 and FIG. 6 respectively show the configurations of the fourth concrete example and the fifth concrete example of the semiconductor device 100 according to the present invention, and are the third concrete shown in FIG. In order to separately reinforce the amount of the suppressed heat conduction in the above-mentioned concrete example, a structure in which the structure of the second concrete example shown in FIG. 3 is used together is incorporated.

That is, in FIG. 5, the flat heat dissipation layer 13 is
It is an example of patterning to the size of the semiconductor element 30,
FIG. 6 is an example in which the flat heat dissipation layer 13 is made larger than the semiconductor element region.

The configuration of such a specific example can be similarly applied to the semiconductor device 100 in the second specific example shown in FIG. 3 described above, and can be dealt with according to the design situation at that time.

Further, FIGS. 7, 8 and 9 are as described above.
A plan view showing a specific example of the arrangement formation pattern of the heat dissipation groove 10 used in the specific example of the semiconductor device 100 according to the present invention disclosed in FIGS. 1, 3, 4, 5, and 6, respectively. Is.

Although FIG. 7, FIG. 8 and FIG. 9 show an array pattern consisting of orthogonal vertical and horizontal lines, the line may be an oblique line and the pattern shape is not limited to a rectangle. It may be a hexagon, a triangle, a rhombus, a circle or an ellipse.

Regarding the pattern of the heat dissipation groove 10, it is difficult to embed the cross portion in consideration of the embedding of the trench, and a flat pattern that is avoided is preferable.

FIG. 10 shows the semiconductor device 1 according to the present invention.
FIG. 50 is a cross-sectional view showing the configuration of the sixth example in No. 00, and in the fifth example, the semiconductor element 30
In this example, the heat dissipation groove 10 is not provided in the substrate 20 or the portion 50 of the silicon oxide film 1 facing the channel portion 60 (below the main gate).

That is, the semiconductor element 3 according to the present invention.
The heat dissipation groove 10 is formed in the substrate 20 or the silicon oxide film 1 portion while avoiding the central portion of 0 or the peripheral portion 40 thereof or the main channel region 60.
The quality of the polysilicon film can be maintained without deteriorating the TFT characteristics of the semiconductor element 30.

FIG. 11 shows the configuration of the seventh example of the semiconductor device 100 according to the present invention.
In this specific example, in the above-mentioned fifth specific example,
As the heat dissipation groove 10 is reduced, the heat dissipation member 1 which is a flat heat dissipation plate is provided below the heat dissipation groove 10 as in FIGS. 3 and 5 and 6.
3 is provided and the heat dissipation layer 13 is formed. This area may be larger than the area of the heating element by adjusting the area of the pattern so that heat can be dissipated. As a result, the accumulation of heat and the surface area can be increased to disperse the heat from the element, enhance the heat dissipation effect, and suppress the temperature rise.

Note that FIG. 12 is an example of a plan view with respect to the sectional view of FIG. The broken line is the heat dissipation groove.

As is clear from the above description of each specific example, the method of manufacturing the semiconductor device according to the present invention is as follows.
When manufacturing a semiconductor device in which a semiconductor element having an exothermic action is formed on an appropriate oxide film, a step of forming a groove on the first surface of an appropriate oxide film, a metal having good thermal conductivity is formed in the groove. The burying step and the step of arranging and forming such that at least a part of the heating surface of the semiconductor element is in contact with at least a part of the groove part on the surface of the oxide film where the groove part is formed. It is a method of manufacturing a semiconductor device.

In the method of manufacturing the semiconductor device according to the present invention, the oxide film is one selected from a silicon oxide film, a glass substrate or a laminated body of a silicon oxide film and a glass substrate. Is preferred, and in the groove,
The material having a high thermal conductivity to be embedded is Si, SiC, A.
It is also desirable that it is one selected from l, W, WSi and the like.

Further, in the method of manufacturing the semiconductor device according to the present invention, following the step of filling the groove with the metal having good thermal conductivity, the surface of the metal in the groove is oxidized with silicon. The step of coating with a film may be provided, and before the step of forming the groove, the oxide film may be provided at a position where it abuts at least a part of the groove. It is also possible to provide a step of forming a flat plate-shaped heat dissipation plate portion made of a metal having good thermal conductivity.

[0093]

Since the semiconductor device and the method of manufacturing the semiconductor device of the present invention employ the technical configuration as described above,
The heat generated from the semiconductor element formed on the substrate is effectively dissipated, and the temperature rise of the semiconductor element region is suppressed,
As a result, damage and destruction of the semiconductor element due to the heat,
It is possible to easily obtain a semiconductor device and its manufacturing method that can effectively prevent deterioration of characteristics.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a first specific example of a semiconductor device according to the present invention.

2 (A) to 2 (F) are cross-sectional views illustrating a procedure of a method for manufacturing a semiconductor device according to a first specific example of the semiconductor device according to the present invention.

FIG. 3 is a sectional view showing a configuration of a second specific example of the semiconductor device according to the present invention.

FIG. 4 is a cross-sectional view showing the configuration of a third specific example of the semiconductor device according to the present invention.

FIG. 5 is a sectional view showing a configuration of a fourth specific example of the semiconductor device according to the present invention.

FIG. 6 is a sectional view showing a configuration of a fifth specific example of the semiconductor device according to the present invention.

FIG. 7 is a plan view showing an example of an arrangement pattern of heat dissipation grooves used in the semiconductor device according to the present invention.

FIG. 8 is a plan view showing an example of an arrangement pattern of heat dissipation grooves used in the semiconductor device according to the present invention.

FIG. 9 is a plan view showing an example of an arrangement pattern of heat dissipation grooves used in the semiconductor device according to the present invention.

FIG. 10 is a sectional view showing a configuration of a sixth specific example of the semiconductor device according to the present invention.

FIG. 11 is a cross-sectional view showing the configuration of a seventh specific example of the semiconductor device according to the present invention.

FIG. 12 is a plan view showing the configuration of a sixth specific example of the semiconductor device according to the present invention.

FIG. 13 is a sectional view showing a configuration example of a conventional semiconductor device.

[Explanation of symbols]

1 ... Oxide film, Silicon oxide film 2 ... Polysilicon film 4 ... Contact hole 5 ... Gate oxide film 6 ... Gate electrode 7 ... Interlayer oxide film 8 ... Source electrode 9 ... Drain electrode 10 ... Heat dissipation groove 13 ... Flat-shaped heat sink 14 ... Silicon oxide film 16 ... Material with good thermal conductivity 20 ... Glass substrate 30 ... Semiconductor element 40 ... Element forming region 50 ... Inside oxide film region 60 ... Channel forming region 100 ... Semiconductor device

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 29/786 H01L 27/12

Claims (19)

(57) [Claims] 1. A semiconductor device in which a semiconductor element made of polysilicon having a heat generating action is formed on an appropriate oxide film, and a portion of the oxide film facing a formation region of the semiconductor element or a region in the vicinity thereof. At least a part is provided with a heat dissipation groove portion filled with a metal having good thermal conductivity, and at least a part of a lower portion of the heat dissipation groove portion is connected to each other through a flat heat dissipation plate portion. Semiconductor device. 2. The semiconductor device according to claim 1, wherein the semiconductor element is one semiconductor element selected from a transistor, a resistor, a diode, a TFT and the like. 3. The semiconductor device according to claim 1, wherein the oxide film is a silicon oxide film. 4. The semiconductor device according to claim 3, wherein the oxide film constitutes a glass substrate. 5. The semiconductor device according to claim 3, wherein the oxide film is composed of the glass substrate and a silicon oxide film formed on the glass substrate. 6. The semiconductor device according to claim 1, wherein the heat dissipation groove portion is formed on either the glass substrate or the silicon oxide film. 7. The semiconductor device according to claim 1, wherein the heat dissipation groove portion is formed in a laminated body of the glass substrate and the silicon oxide film. 8. The metal embedded in the heat dissipation groove is S
The semiconductor device according to claim 1, wherein the semiconductor device is one selected from i, SiC, Al, W, WSi and the like. 9. The semiconductor device according to claim 8, wherein the surface of the metal embedded in the heat dissipation groove is covered with a silicon oxide film. 10. The semiconductor device according to claim 1, wherein the heat dissipation groove is provided inside the oxide film facing a portion of the semiconductor element region having a high heat generation effect. . 11. The semiconductor device according to claim 1, wherein the heat dissipation groove portion is provided inside the oxide film facing the vicinity of a peripheral edge portion in the semiconductor element region. 12. The heat dissipation groove portion is formed in the oxide film so as to have a predetermined depth and a predetermined pattern shape. Semiconductor device. 13. A heat generating film on a suitable oxide film.
Semiconductors with semiconductor elements made of silicon
When manufacturing the device, the thermal conductivity in the appropriate oxide film
Formed by embedding a flat heat dissipation plate made of good metal
The step of applying the flat plate-like material to the first surface of the oxide film.
Form a groove so that it abuts at least part of the hot plate.
Form a groove part connected to each other through the flat plate-shaped heat dissipation plate part
Process of embedding a metal with good thermal conductivity in the groove
The surface of the oxide film on which the groove is formed is
At least the heat generation surface of the semiconductor element made of silicon
Part of the groove is placed so that it abuts at least part of the groove.
A semi-finished product characterized by the process
A method for manufacturing a conductor device. 14. The oxide film is a silicon oxide film or glass.
Substrate or a laminate of silicon oxide film and glass substrate
14. The one selected from the above,
A method for manufacturing a semiconductor device as described above. 15. The thermal conductivity to be embedded in the groove
High materials are selected from Si, SiC, Al, W, WSi, etc.
The selected one is characterized in that it is one selected.
A method of manufacturing a semiconductor device according to item 1. 16. The metal having good thermal conductivity is provided in the groove.
Subsequent to the step of embedding the surface of the metal in the groove.
That there is a step of coating the
The semiconductor according to any one of claims 13 to 15, characterized in that
Device manufacturing method. 17. The radiating groove portion has a predetermined pattern.
Claims characterized by being formed along a chain
Item 17. A method of manufacturing a semiconductor device according to any one of items 13 to 16
Law. 18. The heat dissipation groove portion is formed in the semiconductor element region.
Inside the oxide film facing the part with high heat generation effect in
It is provided in any one of Claims 13 thru | or 17 characterized by the above-mentioned.
A method for manufacturing a semiconductor device as described above. 19. The heat dissipation groove is formed in the semiconductor element region.
Provided inside the oxide film facing the vicinity of the peripheral edge in
The half according to any one of claims 13 to 18, characterized in that
A method for manufacturing a conductor device.