JP2001036091A - Semiconductor device and manufacture of the semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor device, where damage and breakdown of a semiconductor element and deteriorations of characteristics due to heat can be effectively prevented, by dissipating heat generated from a semiconductor element on a substrate and restraining the rise of a temperature in a semiconduc tor element region, and a manufacturing method of the device. SOLUTION: In this semiconductor device 100, a semiconductor element 30 having a heat generating action is formed on a suitable oxide film 1. Heat dissipating trench parts 10 are arranged in at least a part of the oxide film 1 part which faces the forming region of the semiconductor element 30 or its adjacent region.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a structure of a heat radiating mechanism in a semiconductor device including a semiconductor element having a heating function and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device formed by mounting a semiconductor element or the like on a substrate, how to radiate heat generated from the semiconductor element is an important technical problem. In particular, in a semiconductor device using a circuit element such as a transistor having a large power, the problem of heat dissipation is particularly important.

On the other hand, in recent years, the size of semiconductor devices has been reduced in the direction of downsizing, so that it has become increasingly difficult to secure a space that can be used for heat radiation.

Conventionally, generally, when manufacturing the semiconductor device 100, as shown in FIG. 13, a silicon oxide film 1 is formed on a glass substrate 20 and then the silicon oxide film 1 is formed. The desired semiconductor element 30 is mounted and formed directly on the upper surface. Therefore, since there is a silicon oxide film / glass substrate having poor thermal conductivity, there is no place for heat to escape from the element 30. There is a problem that heat accumulates in a narrow element and causes a rise in the temperature of the semiconductor element 30 itself.

[0005] In FIG. 13, the diffusion of the diffusion layer is formed on the silicon oxide film 1, if the configuration of the semiconductor device 100 in the case of using a transistor as the semiconductor element 30 is added. A polysilicon film 2 as a conductive film is formed, and a gate oxide film 5 is further formed on the polysilicon film 2.

Next, a gate electrode 6 is arranged on the gate oxide film 5 in a region where the semiconductor element 30 is to be formed, and the gate oxide film 5 and the gate electrode 6 are connected to an appropriate interlayer oxide film 7. After that, a contact hole 4 penetrating through the interlayer oxide film 7 and the gate oxide film 5 is formed in a portion corresponding to the source / drain region of the transistor 30.
And a source electrode 8 and a drain electrode 9 are formed by burying a conductive member in the contact hole 4.

Here, due to the above configuration, the semiconductor element 3
Since the temperature of the semiconductor element rises due to the heat generated from 0,
The result is that the semiconductor element is degraded or destroyed. In particular, when the semiconductor element is a circuit element having a large power, the influence thereof is particularly large.

Recently, a thin film transistor (TFT) has come to be used as an example of the semiconductor element 30. In the process of forming such a TFT, when polycrystalline amorphous silicon is used, Unless the temperature rise due to the heating means such as a laser used is not prevented, there is a problem that the characteristics of the transistor are deteriorated.

As a method for solving such a problem, for example, Japanese Patent Application Laid-Open No. Hei 5-21344 discloses
A structure in which a heat sink layer is provided between the semiconductor device and a polycrystalline semiconductor layer is disclosed in Japanese Patent Application Laid-Open No. 4-32387.
Patent Document 6 also discloses a thin film transistor in which a thin film having high thermal conductivity is arranged between a substrate and a transistor. However, in any of the known examples, the substrate or the silicon oxide film itself is used. There is no disclosure about a technique for forming a groove-shaped heat radiation path.

[0010] Also, Japanese Patent Application Laid-Open No. 5-206468 discloses that
Similarly, when a thin film transistor is formed, a configuration is shown in which a thin film layer having high thermal conductivity is arranged on a substrate, and the transistor is formed thereon directly or via an insulating film. Also, there is no disclosure about a technique for forming a groove-shaped heat radiation path in a substrate or a silicon oxide film itself.

Japanese Patent Application Laid-Open No. 6-177386 discloses a structure in which a heat dissipation layer is formed on the upper surface of a TFT made of polysilicon formed on a substrate via an interlayer insulating film when forming a thin film transistor. However, the known example does not disclose a technique for forming a groove-shaped heat radiation path in the substrate or the silicon oxide film itself.

Similarly, Japanese Patent Application Laid-Open No. 9-293870 discloses a semiconductor device in which an electrical insulating film is provided on a substrate and a polycrystalline silicon film constituting a thin film transistor is formed on the electrical insulating film. Although a configuration of a semiconductor device in which an electrically conductive film having high thermal conductivity is disposed between the substrate and the electrically insulating film is disclosed, the known example includes a substrate or a silicon oxide film. There is no disclosure of a technology for forming a groove-shaped heat radiation path in itself.

[0013]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the above-mentioned drawbacks of the prior art and to effectively dissipate heat generated from a semiconductor element formed on a substrate, thereby to reduce the area of the semiconductor element area. Suppress the rise in temperature, thereby
An object of the present invention is to provide a semiconductor device capable of effectively preventing damage and destruction of a semiconductor element and deterioration of characteristics due to the heat, and a method of manufacturing the same.

[0014]

The present invention employs the following technical configuration to achieve the above object.

That is, as a first embodiment according to the present invention,
A semiconductor device in which a semiconductor element having a heat generating action is formed on an appropriate oxide film, wherein a heat dissipation groove is provided in at least a part of the oxide film portion facing a formation region of the semiconductor element or a region in the vicinity thereof. According to a second aspect of the present invention, there is provided a semiconductor device in which a semiconductor element having a heating action is formed on an appropriate oxide film. A step of forming a groove on the surface of step 1, a step of embedding a metal having good thermal conductivity in the groove, and a step of forming at least a part of the heat generating surface of the semiconductor element on the surface of the oxide film on which the groove is formed. And forming the semiconductor device so as to be in contact with at least a part of the groove.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device and a method of manufacturing a semiconductor device according to the present invention employ the above-described technical configuration. Since the structure that emits the heat is provided, the heat from the element can be effectively released, and the temperature rise of the element can be suppressed.

Furthermore, in the present invention, a groove filled with Si, SiC, Al or the like having high thermal conductivity is provided below a heat-generating semiconductor element such as a TFT, a resistor, and a diode. The heat generated from the element is conducted to the filling material of the groove, whereby the volume of the heat conducting material is increased and the heat capacity is increased, and the surface area is increased and the heat is easily released to the surroundings. Thus, an increase in the temperature of the semiconductor element can be suppressed.

[0018]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing a semiconductor device according to the present invention;

FIG. 1 is a cross-sectional view illustrating the structure of a specific example of the semiconductor device 100 according to the present invention. In FIG.
0 is formed, and the heat dissipation groove 10 is provided in at least a part of the oxide film 1 facing the formation region of the semiconductor element 30 or a region in the vicinity thereof. Have been.

As the semiconductor element 30 having heat generation used in the semiconductor device 100 according to the present invention, for example, a transistor, a resistor, a diode, or the like is used. It is also desirable to use TFT).

In the present invention, the semiconductor element 30 is formed on the oxide film 1.
Is preferably a silicon oxide film, for example.

Further, in the present invention, the oxide film 1
May constitute the glass substrate 20 itself.

Therefore, in the present invention, the semiconductor element 30 may be formed directly on the glass substrate 20, or may be formed on the silicon oxide film 1 as the oxide film. It may be something.

Similarly, in the present invention, the glass substrate 2
The semiconductor element 30 may be formed on the oxide film 1 formed on the silicon oxide film 1, for example, on the silicon oxide film 1.

In the present invention, the silicon oxide film 1 and the glass substrate 20 have substantially the same composition and characteristics, and have substantially the same heat conduction characteristics. The laminated structure of the silicon oxide film 1 and the glass substrate 20 is simply referred to as a silicon oxide film 1.

Therefore, in the following description, for example, when the heat dissipation groove 10 is formed in the silicon oxide film 1, the heat dissipation groove 10 may be formed only in the oxide film 1. In some cases, it may penetrate through the silicon oxide film 1 and reach a part of the glass substrate 20.

In the present invention, the glass substrate 2
In a case where the semiconductor element 30 is directly formed on the glass substrate 20, the heat dissipation groove 10 may be formed only on the glass substrate 20.

On the other hand, in the present invention, the heat radiation groove 1
No. 0 is required to be embedded with a material 16 having good thermal conductivity, and the metal 1 embedded in the heat radiation groove 10 is required.
6, for example, Si, SiC, Al, W, WSi
It is desirable that it is one selected from materials such as.

It is also preferable that the surface of the metal 16 buried in the heat dissipation groove 10 in the semiconductor device 100 according to the present invention is further covered with a silicon oxide film 14.

In the semiconductor device 100 according to the present invention, the heat radiation groove 10 provided for improving the heat radiation effect of the semiconductor element 30 has a high heat generating effect in the formation region 40 of the semiconductor element 30. It is preferable to provide it in the inside 50 of the oxide film 1 facing the portion.

That is, as a first aspect of the present invention, the oxide film portion 1 or the glass portion facing the peripheral region around the portion having the highest heat generation in the portion of the semiconductor element 30. It is preferable that at least one, preferably a plurality of the heat radiation grooves 10 are arranged and formed in the portion of the substrate 20.

On the other hand, as a second aspect of the present invention, the heat dissipation groove 10 affects the crystallinity of the constituent material of the semiconductor element near the center of the formation region 40 of the semiconductor element 30. Is provided, the heat dissipation groove 10 is provided inside the oxide film 1 facing the vicinity of the periphery of the formation region 40 of the semiconductor element 30 except for the vicinity of the center of the formation region 40 of the semiconductor element 30. Things.

In the present invention, the shape, the number, the arrangement pattern and the like of the heat radiation grooves 10 are not particularly limited, but may have a predetermined depth, number, arrangement formation density and the like. It is preferable that the oxide film 1 be formed in the oxide film 1 with a predetermined pattern shape.

Further, the semiconductor device 100 according to the present invention
It is also preferable that at least a part of the heat radiation groove portion 10 in this embodiment is configured in combination with a flat heat radiation plate portion 13 formed in the oxide film 1.

Hereinafter, the semiconductor device 10 according to the present invention will be described.
A more detailed configuration of 0 will be described in the form of an embodiment with reference to the drawings.

That is, as shown in FIG.
IC, LSI, for example, via silicon oxide film 1
In recent years, it has been practiced to form an integrated circuit such as that described above and provide drive circuits for LCDs, ELs, light valves, and the like, aiming at cost reduction by reducing the number of components and improvement of reliability by reducing connection points. I have.

Further, it has been studied to form the semiconductor device alone on the glass substrate 20 like an ordinary IC or LSI to reduce the cost.

However, the glass substrate 20 is made of silicon Si
Is 1.1 W / mK with respect to the thermal conductivity of 100 W / mK.
The heat conductivity of the semiconductor device 30 is low, and the heat generated from the semiconductor element 30 is accumulated without escaping, resulting in a rise in temperature, which leads to deterioration and destruction of the semiconductor device. Therefore, it is important to form the heat dissipation structure 10 that allows heat dissipation in the glass substrate 20 as in the present invention.

An example of a method of manufacturing a semiconductor device in which the heat dissipation groove 10 is formed in the substrate 20 or the silicon oxide film 1 as an example will be described below.

Normally, the glass substrate 20 is covered with a silicon oxide film 1 to prevent contamination from glass. The silicon oxide film 1 and the glass substrate 20 are made of the same material and have the same thermal conductivity. Therefore, hereinafter, both the silicon oxide film 1 and the glass substrate 20 will be collectively referred to as a silicon oxide film 1. (See FIG. 2A.) Next, as shown in FIG. 2B, heat dissipation grooves 10 are provided in the silicon oxide film 1 by using, for example, anisotropic etching by a RIE apparatus.

As shown in FIG. 2C, the heat radiation groove 10 is
The heat dissipation groove 10 is formed by filling with one material having high thermal conductivity selected from Si, Al, SiC, W, WSi and the like.

The filling method is a CVD method, for example, using Si
Then, it is buried by vapor-phase growth as a-Si (amorphous Si), and CMP (chemical mechanical polish)
An unnecessary film is removed by ing), and planarization is performed.

As another method, there is an etch-back method, in which a filling film is grown thickly and then a depression is formed in a coating film (SOG).
-Spin on glass), and there is a method of removing unnecessary films by etching from above by dry etching.

Thereafter, as shown in FIG. 2C and thereafter, the semiconductor element 30 is formed by a usual method.

Here, a TFT is used as the semiconductor element 30.
2C, first, as shown in FIG. 2C, first, an amorphous silicon (a-Si) film 2 is formed on the surface of the silicon oxide film 1 on which the heat radiation groove 10 is formed. Is grown, and the amorphous silicon (a-Si) is irradiated by laser irradiation with an ELA (excimer laser annealing) device.
The film 2 is made of polysilicon (p-Si) which is polycrystalline silicon.
Convert to 2.

At this time, when the amorphous silicon a-Si film 2 is grown, boron as an impurity can be introduced into the region corresponding to the channel of the TFT simultaneously with the growth.

Thereafter, after a first gate oxide film 3 is formed on the polysilicon (p-Si) film layer 2, the polysilicon is patterned from the first gate oxide film 3 so that each semiconductor element is formed. Form 30 prototypes.

Thereafter, as shown in FIG. 2D, regions (S) constituting the source region and the drain region of the transistor are formed.
D), it is desirable to implant a predetermined impurity to form a diffusion layer. For example, the source-drain is doped with phosphorus at a high concentration by an ion doping apparatus, and if necessary, a second gate oxide film is grown to form a gate oxide film 5.

Further, a conductive material serving as a gate electrode is deposited on the gate oxide film 5 to form a gate electrode 6. As the material of the gate electrode 6, it is desirable to use a high melting point material such as silicon, silicide, W, and WSi.

Thereafter, the LD is further placed in a desired region.
Phosphorus or boron for forming D (Light Doped Drain) is introduced into the polysilicon layer 2 by ion implantation or other methods, or impurities such as boron are introduced into the SD, and then the doped impurities are annealed. An activation operation may be performed.

The processing temperature in this operation is usually 90
It is carried out at around 0 ° C.
It is around 00 ° C. Further, in order to stabilize the TFT characteristics, hydrogenation treatment may be performed thereafter.

Next, as shown in FIG. 2E, contact holes 4 are formed at desired positions such as source and drain regions (SD).
Is formed by RIE or WET etching, and FIG.
As shown in (F), a suitable metal is buried in the contact hole 4 to form a source electrode 8 and a drain electrode 9, and the respective semiconductor elements 30 are connected to complete.

The metal to be buried in the contact hole 4 is, for example, aluminum containing silicon,
Copper or the like is used.

That is, in the present invention, since the above-described configuration is employed, the conventional semiconductor device 3 requiring power is required.
In the case of 0, since the substrate 20 is an oxide film, the thermal conductivity is two orders of magnitude lower than that of silicon, and the heat dissipation effect is small. Therefore, the temperature of the semiconductor element 30 rises.

The temperature of the semiconductor element 30 depends on the area of the semiconductor element 30. As the area is larger, there is no escape of heat at the center of the semiconductor element 30 and the temperature rises. The temperature of the semiconductor element 30 is sometimes 200-300.
In some cases, the temperature of the semiconductor device 30 rises to about 0 ° C., causing the semiconductor element 30 itself to deteriorate or break.

For example, when the width of the TFT is about 10 μm under the same current density condition, the temperature rises to 60 ° C., but when the width is 100 μm, the temperature may rise to 250 ° C. In order to escape, it is important to create a heat escape.

Therefore, the region most suitable for easily and effectively forming the heat dissipation structure in the substrate 20 or the oxide film on the substrate 20, for example, the silicon oxide film 1, is located in the oxide film under the semiconductor element 30. Becomes

Here, by using the trench process used in the semiconductor process technology, the heat radiation groove (trench) 10 can be easily formed in the device forming process.

As a material for filling the trench, a material having a high thermal conductivity is used.
C, W, WSi and the like.

The heat generated in the semiconductor element portion is transferred to the filling of the groove 10, that is, the temperature rise in the semiconductor element region is suppressed, so that the element does not deteriorate or break down due to the heat.

In the present invention, the heat radiation groove 10 provided below the semiconductor element 30 immediately takes in the heat generated in the element region 40 into the internal filling material, and the entirety including the semiconductor element 30 is formed. Since the increase in heat capacity disperses the heat generated in the semiconductor element 30, the temperature rise of the semiconductor element itself becomes slow.

At the same time, since the surface area of the heat dissipation groove 10 as the heat dissipation means increases, the heat dissipation effect also increases in proportion to the increase in the surface area.

For example, if the surface area is increased by 100 times, even an oxide film having a thermal conductivity of 1/100 of silicon has the same heat radiation effect as silicon. These two effects can suppress the temperature rise of the element.

For example, in an element having a large semiconductor element area and easily accumulating heat inside the semiconductor element, the heat radiation groove 10 provided below the semiconductor element is increased by the large area of the semiconductor element. Also increases.

Incidentally, the semiconductor device 100 according to the present invention described above.
In the specific example, the shape, number, size, arrangement pattern and the like of the heat radiation groove 10 are not particularly limited,
The semiconductor element 30 used in the semiconductor device 100
Can be appropriately determined in consideration of the magnitude, the number, the density, and the like of the power.

The cross-sectional shape of the heat radiation groove 10 is desirably a rectangular shape having a major axis in a direction perpendicular to the surface of the substrate 20 of the semiconductor device 100 as shown in FIG.

The depth or formation density of the heat radiation groove 10 in the direction orthogonal to the surface of the substrate 20 is not particularly limited, and can be determined appropriately.

Further, as an example of the planar arrangement pattern of the heat dissipation grooves 10, any of the patterns shown in FIGS. 7 to 9 can be arbitrarily used.

Next, the semiconductor device 100 according to the present invention
Another specific example will be described in detail with reference to the drawings.

FIG. 3 is a cross-sectional view showing the configuration of a second specific example of the semiconductor device 100 according to the present invention. In the second specific example, as apparent from FIG.
On the other hand, the structure is such that the effect of further suppressing the temperature rise of the semiconductor element 30 is increased by further increasing the volume and the surface area of the heat radiating means.

That is, in this specific example, the heat radiation groove 1
0 is orthogonal to the longitudinal direction of the heat radiation groove 10, that is, a flat heat radiation plate 13 formed in a horizontal manner is combined.

In order to constitute the heat radiating means, first, a material having good heat conductivity (for example, silicon, SiC) is formed on the substrate 20 before the trench process for forming the heat radiating groove 10 described above. , W, WSi, etc.) are deposited and patterned into a desired shape to form a flat heat dissipation layer 13.

Thereafter, the substrate 20 and the plate-shaped heat radiation layer 13 are entirely covered with the silicon oxide film 1, and the same trench process as described above is executed to complete the heat radiation groove 10.

The subsequent steps are the same as those in the first embodiment.

In the second specific example, the thickness, area, arrangement position, and the like of the plate-shaped heat radiation layer 13 are not particularly limited, and the thickness of the semiconductor element 30 used in the semiconductor device 100 is not limited. It can be appropriately determined in consideration of the magnitude, number, density, and the like of the power.

Next, the semiconductor device 100 according to the present invention will be described.
The third specific example will be described with reference to FIG.

That is, FIG. 4 shows an ELA process for converting amorphous silicon to polysilicon when a heat radiation groove is generally provided in the channel portion (under the main gate) of the semiconductor element 30. Heat may escape, degrading the polysilicon film quality and adversely affecting TFT characteristics (determined by how to take a margin in circuit design).

As a countermeasure, when the heat radiation groove 10 is buried in the groove 10 formed by the trench process using the material 15 having a high thermal conductivity, the silicon 15 is further placed on the material 15 having the high thermal conductivity. By forming the oxide film 14 and completing the embedding process, the heat conduction can be slightly suppressed.

In this specific example, the depth of the heat radiation groove 10 and the depth of the material 15 having a high thermal conductivity embedded in the groove 10 are adjusted by considering the deterioration of the TFT characteristics in advance. be able to.

FIGS. 5 and 6 show the structures of the fourth and fifth embodiments of the semiconductor device 100 according to the present invention, respectively. In order to separately reinforce the heat conduction suppressed in the specific example, a configuration in which the structure of the second specific example shown in FIG. 3 is used is adopted.

That is, FIG. 5 shows that the flat heat radiation layer 13 is
This is an example of patterning to the size of the semiconductor element 30,
FIG. 6 shows an example in which the flat heat dissipation layer 13 is larger than the semiconductor element region.

The configuration of this specific example can be similarly applied to the semiconductor device 100 in the second specific example shown in FIG. 3, and can be adapted according to the design situation at that time.

FIG. 7, FIG. 8, and FIG.
FIGS. 1, 3, 4, 5 and 6 are plan views showing specific examples of the arrangement and formation pattern of the heat dissipation grooves 10 used in the specific example of the semiconductor device 100 according to the present invention disclosed in each of FIGS. It is.

FIGS. 7, 8 and 9 show an array pattern composed of orthogonal vertical and horizontal lines. However, the line may be an oblique line, and the pattern shape is not limited to a rectangle. , A hexagon, a triangle, a rhombus, a circle or an ellipse.

As for the pattern of the heat radiation groove 10, the cross portion is hard to be buried in consideration of the burying of the trench, and it is preferable to avoid the plane pattern.

FIG. 10 shows the semiconductor device 1 according to the present invention.
FIG. 13 is a cross-sectional view showing the configuration of a sixth specific example at 00, and in the fifth specific example,
This is an example in which the heat dissipation groove 10 is not provided in the substrate 20 or the portion 50 of the silicon oxide film 1 facing the channel portion 60 (below the main gate).

That is, the semiconductor device 3 according to the present invention
The heat radiation groove 10 is formed in the substrate 20 or the silicon oxide film 1 while avoiding the central portion of 0 or the vicinity 40 thereof or the main channel region 60.
The polysilicon film quality can be maintained without deteriorating the TFT characteristics of the semiconductor element 30.

FIG. 11 shows the configuration of a seventh specific example of the semiconductor device 100 according to the present invention.
In this specific example, in the fifth specific example described above,
3 and FIGS. 5 and 6, the heat radiating material 1, which is a flat heat radiating plate, is provided below the heat radiating groove 10 because of the reduced heat radiating groove 10.
3 and a heat radiation layer 13 is formed. This area may be larger than the area of the heating element by adjusting the area of the pattern to a size capable of obtaining heat radiation. As a result, it is possible to increase the heat accumulation and the surface area, disperse the heat from the element, enhance the heat radiation effect, and suppress the temperature rise.

FIG. 12 is an example of a plan view corresponding to the sectional view of FIG. A broken line is a heat dissipation groove.

As is clear from the above description of each specific example, the method of manufacturing the semiconductor device according to the present invention includes the following.
In manufacturing a semiconductor device in which a semiconductor element having a heat-generating action is formed on an appropriate oxide film, a step of forming a groove in the first surface of the appropriate oxide film is performed by forming a metal having good thermal conductivity in the groove. A burying step, and a step of arranging and forming at least a part of a heat generating surface of the semiconductor element on a surface of the oxide film where the groove is formed so as to contact at least a part of the groove. 6 shows a method for manufacturing a semiconductor device.

In the method of manufacturing a semiconductor device according to the present invention, the oxide film is one selected from a silicon oxide film, a glass substrate, or a laminate of a silicon oxide film and a glass substrate. Is preferable, and in the groove,
The material having high thermal conductivity to be embedded is Si, SiC, A
It is also desirable that this is one selected from 1, W, WSi and the like.

Further, in the method of manufacturing a semiconductor device according to the present invention, following the step of embedding the metal having good heat conductivity in the groove, the surface of the metal is oxidized with silicon in the groove. A step of coating with a film may be provided, and before the step of forming the groove, in the oxide film, at a position such as to contact at least a part of the groove, It is also possible to adopt a configuration in which a step of forming a flat heat-dissipating plate portion made of a metal having good heat conductivity is provided.

[0093]

The semiconductor device and the method of manufacturing the semiconductor device according to the present invention employ the above-described technical configuration.
Effectively dissipates heat generated from the semiconductor element formed on the substrate, suppresses a rise in the temperature of the semiconductor element region,
Thereby, damage and destruction of the semiconductor element due to the heat,
It is possible to easily obtain a semiconductor device and a method of manufacturing the same, which can effectively prevent deterioration of characteristics.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a configuration of a first specific example of a semiconductor device according to the present invention.

FIGS. 2A to 2F are cross-sectional views illustrating a procedure of a method of manufacturing a semiconductor device according to a first specific example of a semiconductor device according to the present invention.

FIG. 3 is a cross-sectional view showing a configuration of a second specific example of the semiconductor device according to the present invention.

FIG. 4 is a cross-sectional view showing a configuration of a third specific example of the semiconductor device according to the present invention.

FIG. 5 is a sectional view showing a configuration of a fourth specific example of the semiconductor device according to the present invention.

FIG. 6 is a sectional view showing a configuration of a fifth specific example of the semiconductor device according to the present invention.

FIG. 7 is a plan view showing an example of an arrangement pattern of heat radiation grooves used in the semiconductor device according to the present invention.

FIG. 8 is a plan view showing an example of an arrangement pattern of heat radiation grooves used in the semiconductor device according to the present invention.

FIG. 9 is a plan view showing an example of an arrangement pattern of heat dissipation grooves used in the semiconductor device according to the present invention.

FIG. 10 is a cross-sectional view showing a configuration of a sixth specific example of the semiconductor device according to the present invention.

FIG. 11 is a cross-sectional view showing a configuration of a seventh specific example of the semiconductor device according to the present invention.

FIG. 12 is a plan view showing a configuration of a sixth specific example of the semiconductor device according to the present invention.

FIG. 13 is a cross-sectional view illustrating a configuration example of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Oxide film, silicon oxide film 2 ... Polysilicon film 4 ... Contact hole 5 ... Gate oxide film 6 ... Gate electrode 7 ... Interlayer oxide film 8 ... Source electrode 9 ... Drain electrode 10 ... Heat radiation groove 13 ... Plate heat radiation plate 14 ... Silicon oxide film 16 ... Material with good thermal conductivity 20 ... Glass substrate 30 ... Semiconductor element 40 ... Element formation area 50 ... Inside oxide film area 60 ... Channel formation area 100 ... Semiconductor device

Continued on front page F-term (reference)

Claims (22)

[Claims] 1. A semiconductor device in which a semiconductor element having a heat generating action is formed on an appropriate oxide film, wherein at least a part of the oxide film portion facing a region where the semiconductor element is formed or a region near the semiconductor element is formed. A semiconductor device having a heat dissipation groove. 2. The semiconductor device according to claim 1, wherein said semiconductor element is one semiconductor element selected from a transistor, a resistor, a diode, a TFT, and the like. 3. The semiconductor device according to claim 1, wherein said oxide film is a silicon oxide film. 4. The semiconductor device according to claim 3, wherein said oxide film forms a glass substrate. 5. The semiconductor device according to claim 3, wherein the oxide film includes the glass substrate and a silicon oxide film formed on the glass substrate. 6. The semiconductor device according to claim 1, wherein said heat radiation groove is formed on either said glass substrate or said silicon oxide film. 7. The semiconductor device according to claim 1, wherein said heat radiation groove is formed in a laminate of said glass substrate and said silicon oxide film. 8. The semiconductor device according to claim 1, wherein said heat radiation groove is buried with a metal having good heat conductivity. 9. The metal buried in the heat radiation groove is S
9. The semiconductor device according to claim 8, wherein the semiconductor device is one selected from i, SiC, Al, W, WSi, and the like. 10. The semiconductor device according to claim 8, wherein the surface of the metal buried in the heat radiation groove is covered with a silicon oxide film. 11. The semiconductor device according to claim 1, wherein said heat radiation groove is provided inside said oxide film facing a portion having a high heat generating effect in said semiconductor element region. . 12. The semiconductor device according to claim 1, wherein said heat radiation groove is provided inside said oxide film opposed to a vicinity of a peripheral portion in said semiconductor element region. 13. The heat radiation groove according to claim 1, wherein the heat radiation groove has a predetermined depth and a predetermined pattern and is formed in the oxide film. Semiconductor device. 14. The semiconductor device according to claim 1, wherein at least a part of the heat radiation groove is configured in combination with a flat heat radiation plate. 15. A step of forming a groove in a first surface of an appropriate oxide film when manufacturing a semiconductor device in which a semiconductor element having a heat generating action is formed on an appropriate oxide film;
A step of embedding a metal having good thermal conductivity in the groove, such that at least a part of the heat generating surface of the semiconductor element contacts at least a part of the groove on the surface of the oxide film on which the groove is formed. And a step of arranging and forming the semiconductor device. 16. The method according to claim 15, wherein the oxide film is one selected from a silicon oxide film, a glass substrate, or a laminate of a silicon oxide film and a glass substrate.
The manufacturing method of the semiconductor device described in the above. 17. The method according to claim 15, wherein the material having a high thermal conductivity to be embedded in the groove is one selected from Si, SiC, Al, W, WSi and the like.
13. The method for manufacturing a semiconductor device according to item 5. 18. The method according to claim 1, further comprising, after the step of embedding the metal having good thermal conductivity in the groove, covering the surface of the metal with a silicon oxide film in the groove. Item 18. A method for manufacturing a semiconductor device according to any one of Items 15 to 17. 19. A flat heat-radiating plate made of a metal having good thermal conductivity is provided in the oxide film at a position in contact with at least a part of the groove before the step of forming the groove. 19. The method of manufacturing a semiconductor device according to claim 15, further comprising a step of forming a portion. 20. The method of manufacturing a semiconductor device according to claim 15, wherein said heat radiation groove is formed along a predetermined pattern. 21. The semiconductor device according to claim 15, wherein the heat radiation groove is provided inside the oxide film facing a portion having a high heat generating effect in the semiconductor element region. Production method. 22. The method of manufacturing a semiconductor device according to claim 15, wherein said heat radiation groove is provided inside said oxide film opposed to a vicinity of a peripheral portion in said semiconductor element region. .