JP2007093453A - Surface-mounted temperature sensor - Google Patents

Surface-mounted temperature sensor Download PDF

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JP2007093453A
JP2007093453A JP2005284664A JP2005284664A JP2007093453A JP 2007093453 A JP2007093453 A JP 2007093453A JP 2005284664 A JP2005284664 A JP 2005284664A JP 2005284664 A JP2005284664 A JP 2005284664A JP 2007093453 A JP2007093453 A JP 2007093453A
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insulating substrate
film
temperature sensor
terminal electrode
mount type
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Yoshihiro Higuchi
由浩 樋口
Masatoshi Abe
政利 阿部
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To achieve higher temperature accuracy and response properties with less effect of thermal dissipation from the upper surface in a surface-mounted temperature sensor. <P>SOLUTION: The surface-mounted temperature sensor is provided with: an insulating substrate 10; a heat-sensitive resistor part 11 composed of a thermistor film formed on the surface of the insulating substrate 10; a film-like resistor part 12 which is formed on the surface of the insulating substrate 10 and whose one end and one end of the heat-sensitive resistor part 11 are electrically connected to each other; a first terminal electrode 13 electrically connected to the other end of the heat-sensitive resistor part 11; a second terminal electrode 14 electrically connected to the other end of the film-like resistor part 12; and a third terminal electrode 15 electrically connected to respective ends of the heat-sensitive resistor part 11 and the film-like resistor part 12. The heat-sensitive resistor part 11 is formed on the lower surface of the insulating substrate 10 to be the mounting surface. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、温度検出用や温度補償用等に有効な表面実装型温度センサに関する。   The present invention relates to a surface mount type temperature sensor effective for temperature detection and temperature compensation.

従来、温度検出用や温度補償用として用いられている薄膜あるいは厚膜タイプのサーミスタとしては、絶縁性基板上にサーミスタ部を形成し、その両端に端子電極部を形成した2端子構造のものが知られている。このようなサーミスタを利用した一般的な温度検出回路としては、図9の等価回路に示すように、入力端子電極1、抵抗2、出力端子電極3、NTCサーミスタ(Negative Temperature Coefficient Themistor)4及びアース端子電極5をこの順に直列に接続したものが知られている。   Conventionally, as a thin film or thick film type thermistor used for temperature detection or temperature compensation, there is a two-terminal structure in which a thermistor portion is formed on an insulating substrate and terminal electrode portions are formed at both ends thereof. Are known. As a general temperature detection circuit using such a thermistor, as shown in an equivalent circuit of FIG. 9, an input terminal electrode 1, a resistor 2, an output terminal electrode 3, an NTC thermistor (Negative Temperature Coefficient Themistor) 4, and a ground A device in which terminal electrodes 5 are connected in series in this order is known.

このような構成の温度検出回路は、入力端子電極1とアース端子電極5との間に電圧を印加し、出力端子電極3とアース端子電極5との間の電圧を計測することにより、出力電圧を温度に換算して温度変化を検出することができるものである。
従来、例えば特許文献1には、絶縁基板の上面(表面)にサーミスタ厚膜と抵抗体厚膜とを形成した厚膜サーミスタが提案されている。
The temperature detection circuit having such a configuration applies the voltage between the input terminal electrode 1 and the earth terminal electrode 5 and measures the voltage between the output terminal electrode 3 and the earth terminal electrode 5, thereby outputting the output voltage. Is converted into temperature, and a temperature change can be detected.
Conventionally, for example, Patent Document 1 proposes a thick film thermistor in which a thermistor thick film and a resistor thick film are formed on the upper surface (front surface) of an insulating substrate.

特開平10−312916号公報(特許請求の範囲、図7)Japanese Patent Laid-Open No. 10-312916 (Claims, FIG. 7)

上記従来の技術には、以下の課題が残されている。
すなわち、従来では、絶縁基板の上面からの熱放散によりサーミスタ厚膜における温度精度及び応答性が低下してしまう不都合があった。また、特に、過熱保護用途の場合であってFET等の発熱部品が検出対象となる場合に、この発熱部品との熱結合を図る場合に、検出温度精度をより向上させることが要望されている。
The following problems remain in the conventional technology.
In other words, conventionally, there has been a problem that the temperature accuracy and responsiveness of the thermistor thick film is reduced due to heat dissipation from the upper surface of the insulating substrate. In particular, in the case of overheat protection applications, when a heat-generating component such as an FET is a detection target, it is desired to further improve the detection temperature accuracy when thermal coupling with the heat-generating component is intended. .

本発明は、前述の課題に鑑みてなされたもので、上面からの熱放散の影響が少なく、より温度精度が高いと共に応答性に優れた表面実装型温度センサを提供することを目的とする。   The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a surface-mounted temperature sensor that is less affected by heat dissipation from the upper surface, has higher temperature accuracy, and has excellent responsiveness.

本発明は、前記課題を解決するために以下の構成を採用した。すなわち、本発明の表面実装型温度センサは、絶縁性基板と、前記絶縁性基板の面上に形成されたサーミスタ膜からなる感温抵抗部と、前記絶縁性基板の面上に形成され前記感温抵抗部と互いの一端同士が電気的に接続された膜状抵抗部と、前記感温抵抗部の他端に電気的に接続された第1の端子電極と、前記膜状抵抗部の他端に電気的に接続された第2の端子電極と、前記感温抵抗部及び前記膜状抵抗部のそれぞれの一端に電気的に接続された第3の端子電極と、を備え、前記感温抵抗部が、実装面となる前記絶縁性基板の下面に形成されていることを特徴とすることを特徴とする。   The present invention employs the following configuration in order to solve the above problems. That is, the surface mount type temperature sensor of the present invention is formed on the surface of the insulating substrate, the temperature sensitive resistor portion formed of the thermistor film formed on the surface of the insulating substrate, and the surface of the insulating substrate. A film resistance part in which one end of each is electrically connected to the temperature resistance part, a first terminal electrode electrically connected to the other end of the temperature sensitive resistance part, and the other of the film resistance part A second terminal electrode electrically connected to an end; and a third terminal electrode electrically connected to one end of each of the temperature-sensitive resistor portion and the film-like resistor portion, and the temperature-sensitive device. The resistance portion is formed on the lower surface of the insulating substrate serving as a mounting surface.

この表面実装型温度センサでは、感温抵抗部が実装面となる絶縁性基板の下面に形成されているので、感温抵抗部が絶縁性基板上面から離間しており、絶縁性基板上面からの熱放散の影響を低減することができ、高い温度精度を得ることができる。また、実装された状態で感温抵抗部が実装基板に接触又は近接するため、実装基板からの直接的な熱伝導が得られて応答性を高めることができる。特に、過熱保護用途の場合であってFET等の発熱部品が検出対象となる場合に、この発熱部品との熱結合を図る場合に、検出温度精度を向上させることができるメリットがある。   In this surface mount type temperature sensor, since the temperature sensitive resistor portion is formed on the lower surface of the insulating substrate serving as the mounting surface, the temperature sensitive resistor portion is separated from the upper surface of the insulating substrate, and from the upper surface of the insulating substrate. The influence of heat dissipation can be reduced, and high temperature accuracy can be obtained. In addition, since the temperature-sensitive resistor portion is in contact with or close to the mounting substrate in the mounted state, direct heat conduction from the mounting substrate can be obtained and the responsiveness can be improved. In particular, there is a merit that the detection temperature accuracy can be improved in the case of heat coupling with the heat generating component when the heat generating component such as FET is a detection target in the case of overheating protection.

また、本発明の表面実装型温度センサは、前記膜状抵抗部が、少なくとも前記絶縁性基板の上面に形成されていることを特徴とする。すなわち、この表面実装型温度センサでは、膜状抵抗部が感温抵抗部とは反対側の絶縁性基板の上面に形成されて感温抵抗部とは別々の面上に配されるので、同一面内に感温抵抗部と膜状抵抗部とを形成する場合に比べて、絶縁性基板の面上における膜状抵抗部及び感温抵抗部の面積を大きく設定することができる。逆に言えば、同じ面積の感温抵抗部及び膜状抵抗部で、絶縁性基板のチップサイズを小さくすることができ、全体の小型化を図ることができる。また、感温抵抗部が、膜状抵抗部の発熱の影響を受け難くなり、より温度精度を高めることができる。   In the surface mount type temperature sensor according to the present invention, the film-like resistance portion is formed at least on the upper surface of the insulating substrate. That is, in this surface mount type temperature sensor, the film-like resistance portion is formed on the upper surface of the insulating substrate opposite to the temperature-sensitive resistance portion, and is arranged on a different surface from the temperature-sensitive resistance portion. Compared with the case where the temperature-sensitive resistor portion and the film-like resistor portion are formed in the plane, the areas of the film-like resistor portion and the temperature-sensitive resistor portion on the surface of the insulating substrate can be set larger. In other words, the chip size of the insulating substrate can be reduced by the temperature-sensitive resistance portion and the film-like resistance portion having the same area, and the overall size can be reduced. In addition, the temperature-sensitive resistance portion is not easily affected by the heat generated by the film-like resistance portion, and the temperature accuracy can be further improved.

また、本発明の表面実装型温度センサは、前記絶縁性基板の下面及び端面の少なくとも一方に形成され前記第1〜3の端子電極と電気的に絶縁された第4の端子電極を備えていることを特徴とする。すなわち、この表面実装型温度センサでは、第4の端子電極を絶縁性基板の下面及び端面の少なくとも一方に形成しているので、第4の端子電極が熱的結合端子として機能し、より高い熱伝導性を得ることができる。なお、この場合、第4の端子電極は、熱伝導性が良好でかつハンダ付け可能な材料で形成されることが好ましい。   The surface mount type temperature sensor of the present invention includes a fourth terminal electrode formed on at least one of the lower surface and the end surface of the insulating substrate and electrically insulated from the first to third terminal electrodes. It is characterized by that. That is, in this surface mount type temperature sensor, since the fourth terminal electrode is formed on at least one of the lower surface and the end surface of the insulating substrate, the fourth terminal electrode functions as a thermal coupling terminal, and higher heat Conductivity can be obtained. In this case, it is preferable that the fourth terminal electrode is formed of a material that has good thermal conductivity and can be soldered.

さらに、本発明の表面実装型温度センサは、前記第4の端子電極が、前記絶縁性基板の互いに対向する一方の端面側に形成され、前記第1〜3の端子電極が、前記絶縁性基板の互いに対向する他方の端面側に形成され、前記第4の端子電極の面積が、前記第1〜3の端子電極よりも大きく設定されていることを特徴とする。すなわち、この表面実装型温度センサでは、第1〜3の端子電極と反対側に広い面積で第4の端子電極が形成されているので、熱結合端子となる第4の端子電極側をFET等の発熱部品側に向けて実装することで、大面積の第4の端子電極により、熱を受け易くすることができると共に、小面積の第1〜3の端子電極により、熱を逃がし難くすることができる。   Furthermore, in the surface mount type temperature sensor of the present invention, the fourth terminal electrode is formed on one end face side of the insulating substrate facing each other, and the first to third terminal electrodes are formed on the insulating substrate. And the area of the fourth terminal electrode is set larger than that of the first to third terminal electrodes. That is, in this surface mount type temperature sensor, since the fourth terminal electrode is formed in a wide area on the side opposite to the first to third terminal electrodes, the fourth terminal electrode side serving as a thermal coupling terminal is connected to an FET or the like. By mounting toward the heat-generating component side, heat can be easily received by the fourth terminal electrode having a large area, and heat can hardly be released by the first to third terminal electrodes having a small area. Can do.

また、本発明の表面実装型温度センサは、前記感温抵抗部上に、保護膜が形成されており、前記保護膜が、前記絶縁性基板の下面全体を面一にするように形成されていることを特徴とする。すなわち、この表面実装型温度センサでは、保護膜が絶縁性基板の下面全体を面一にするように形成されているので、実装した際に、絶縁性基板の下面全体が実装基板上に密着した状態で固定されることで、下面の感温抵抗部に対してより効率的に熱の伝導を図ることができる。   In the surface mount type temperature sensor of the present invention, a protective film is formed on the temperature-sensitive resistor portion, and the protective film is formed so that the entire lower surface of the insulating substrate is flush with the surface. It is characterized by being. That is, in this surface mount type temperature sensor, since the protective film is formed so that the entire lower surface of the insulating substrate is flush, the entire lower surface of the insulating substrate is in close contact with the mounting substrate when mounted. By fixing in a state, heat can be more efficiently conducted to the temperature-sensitive resistance portion on the lower surface.

本発明によれば、以下の効果を奏する。
すなわち、本発明に係る表面実装型温度センサによれば、感温抵抗部が実装面となる絶縁性基板の下面に形成されているので、絶縁性基板上面からの熱放散の影響を低減することができると共に実装基板からの直接的な熱伝導を得ることができ、高い温度精度及び応答性を得ることができる。したがって、特に、FET等の発熱部品に対する過熱保護用途等に好適である。
The present invention has the following effects.
That is, according to the surface mount type temperature sensor according to the present invention, since the temperature sensitive resistor portion is formed on the lower surface of the insulating substrate serving as the mounting surface, the influence of heat dissipation from the upper surface of the insulating substrate can be reduced. In addition, it is possible to obtain direct heat conduction from the mounting substrate, and to obtain high temperature accuracy and responsiveness. Therefore, it is particularly suitable for overheating protection for heat-generating parts such as FETs.

以下、本発明に係る表面実装型温度センサの第1実施形態を、図1から図3を参照しながら説明する。   Hereinafter, a surface mount type temperature sensor according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3.

本実施形態の表面実装型温度センサ110は、図1及び図2に示すように、アルミナ基板等の絶縁性基板10と、実装面となる絶縁性基板10の上面に形成され厚膜又は薄膜のサーミスタ膜からなる感温抵抗部11と、絶縁性基板10の下面に形成され感温抵抗部11と互いの一端同士が電気的に接続されトリミング可能な膜状抵抗部12と、感温抵抗部11の他端に電気的に接続された第1の端子電極13と、膜状抵抗部12の他端に電気的に接続された第2の端子電極14と、感温抵抗部11及び膜状抵抗部12のそれぞれの一端に電気的に接続された第3の端子電極15と、第1〜3の端子電極13〜15と電気的に絶縁された第4の端子電極16と、を備えている。すなわち、この表面実装型温度センサは、第1〜3の端子電極13〜15からなる有効3端子と、第4の端子電極16の熱結合端子と、を有する電圧出力タイプの温度センサである。   As shown in FIGS. 1 and 2, the surface mount type temperature sensor 110 according to the present embodiment is formed on an insulating substrate 10 such as an alumina substrate and an upper surface of the insulating substrate 10 to be a mounting surface. A temperature-sensitive resistor portion 11 made of a thermistor film; a temperature-sensitive resistor portion 11 formed on the lower surface of the insulating substrate 10; 11, a first terminal electrode 13 electrically connected to the other end of the electrode 11, a second terminal electrode 14 electrically connected to the other end of the film resistor 12, a temperature sensitive resistor 11 and a film A third terminal electrode 15 electrically connected to one end of each of the resistor parts 12; and a fourth terminal electrode 16 electrically insulated from the first to third terminal electrodes 13-15. Yes. That is, this surface-mount type temperature sensor is a voltage output type temperature sensor having effective three terminals including first to third terminal electrodes 13 to 15 and a thermal coupling terminal of the fourth terminal electrode 16.

上記感温抵抗部11としては、NTC型、PTC型、CTR型等のサーミスタが挙げられるが、本実施形態ではNTC型サーミスタを採用している。感温抵抗部11は、矩形状にMn−Co−Cu系材料、Mn−Co−Fe系材料等のサーミスタ材料で形成されている。また、感温抵抗部11下には、互いに所定間隔を空けて対向配置された第1の膜下電極部17aと、第2の膜下電極部17bとが形成されている。   Examples of the temperature sensitive resistor 11 include NTC type, PTC type, and CTR type thermistors. In this embodiment, NTC type thermistors are used. The temperature-sensitive resistance portion 11 is formed of a thermistor material such as a Mn—Co—Cu-based material or a Mn—Co—Fe-based material in a rectangular shape. A first sub-film electrode portion 17a and a second sub-film electrode portion 17b are formed below the temperature-sensitive resistance portion 11 so as to face each other with a predetermined distance therebetween.

さらに、第1の膜下電極部17aと第1の端子電極13とは、絶縁性基板10上に形成された第1の配線部13aで接続されている。また、第2の膜下電極部17bと第3の端子電極15とは、絶縁性基板10上に形成された第2の配線部15aで接続されている。また、絶縁性基板10上には、第2の端子電極14と接続された第3の配線部14aが膜状抵抗部12の一端部下まで延在して形成されている。さらに、第2の配線部15aは、一部が膜状抵抗部12の他端部下まで延在して形成されている。すなわち、図9の等価回路で説明すると、第1の端子電極13はアース端子電極5として、また、第2の端子電極14は入力端子電極1として、さらに、第3の端子電極15は出力端子電極3として機能する。   Further, the first subfilm electrode portion 17 a and the first terminal electrode 13 are connected by a first wiring portion 13 a formed on the insulating substrate 10. The second subfilm electrode portion 17 b and the third terminal electrode 15 are connected by a second wiring portion 15 a formed on the insulating substrate 10. A third wiring portion 14 a connected to the second terminal electrode 14 is formed on the insulating substrate 10 so as to extend below one end portion of the film-like resistor portion 12. Furthermore, the second wiring portion 15 a is formed so that a part thereof extends below the other end portion of the film-like resistance portion 12. That is, in the equivalent circuit of FIG. 9, the first terminal electrode 13 is the ground terminal electrode 5, the second terminal electrode 14 is the input terminal electrode 1, and the third terminal electrode 15 is the output terminal. It functions as the electrode 3.

上記膜状抵抗部12は、帯状に酸化ルテニウム系の厚膜材料で形成されている。また、上記第1〜第4の端子電極13〜16は、Agフィラー入り樹脂電極と、Niめっき層と、Snめっき層と、をこの順で積層した構成を有している。また、第1及び第2の膜下電極部17a、17b及び第1〜第3の配線部13a、14a、15aは、Ag系又はAg/Pd系電極材料で形成されている。   The film-like resistance portion 12 is formed of a ruthenium oxide thick film material in a band shape. Moreover, the said 1st-4th terminal electrodes 13-16 have the structure which laminated | stacked the resin electrode containing Ag filler, Ni plating layer, and Sn plating layer in this order. The first and second sub-film electrode portions 17a, 17b and the first to third wiring portions 13a, 14a, 15a are made of an Ag-based or Ag / Pd-based electrode material.

なお、上述したように、第1〜第4の端子電極13〜16は、熱伝導性が良好でかつハンダ付け可能な材料で形成される。
また、感温抵抗部11と膜状抵抗部12とは、互いに所定間隔を空けて配されている。さらに、絶縁性基板10の上には、図2に示すように、感温抵抗部11と膜状抵抗部12とを覆うようにガラス材料、SiOスパッタ膜や樹脂材料(エポキシ系)等の保護膜18が形成されている。この保護膜18は、図3に示すように、絶縁性基板10の下面全体を面一にするように形成されている。なお、図2及び図3以外の図では、保護膜18を省略して図示している。
As described above, the first to fourth terminal electrodes 13 to 16 are formed of a material having good thermal conductivity and solderable.
Further, the temperature-sensitive resistor portion 11 and the film-like resistor portion 12 are arranged with a predetermined interval therebetween. Furthermore, on the insulating substrate 10, as shown in FIG. 2, a glass material, a SiO 2 sputtered film, a resin material (epoxy-based) or the like is provided so as to cover the temperature-sensitive resistance portion 11 and the film-like resistance portion 12. A protective film 18 is formed. As shown in FIG. 3, the protective film 18 is formed so that the entire lower surface of the insulating substrate 10 is flush. In the drawings other than FIGS. 2 and 3, the protective film 18 is omitted.

第1〜第4の端子電極13〜16は、絶縁性基板10の互いに対向する端面に設けられていると共に、絶縁性基板10の上面及び下面まで回り込んだ状態で延在して形成されている。
また、第1の端子電極13と第4の端子電極16とは、感温抵抗部11を間に挟んで互いに対向して配置されていると共に、第2の端子電極14と第3の端子電極15とは、膜状抵抗部12を間に挟んで互いに対向して配置されている。
The first to fourth terminal electrodes 13 to 16 are provided on end surfaces facing each other of the insulating substrate 10, and are formed so as to extend to the upper surface and the lower surface of the insulating substrate 10. Yes.
In addition, the first terminal electrode 13 and the fourth terminal electrode 16 are disposed to face each other with the temperature-sensitive resistor portion 11 interposed therebetween, and the second terminal electrode 14 and the third terminal electrode. 15 are arranged opposite to each other with the film-like resistor 12 interposed therebetween.

次に、本実施形態の表面実装型温度センサ110の製造方法について、以下に説明する。なお、本実施形態においては、複数の表面実装型温度センサ110を一括形成する場合について説明する。   Next, a manufacturing method of the surface mount type temperature sensor 110 of the present embodiment will be described below. In the present embodiment, a case where a plurality of surface mount type temperature sensors 110 are collectively formed will be described.

まず、複数の表面実装型温度センサ110を形成可能な大面積のアルミナ基板等の絶縁性基板10を用意し、この絶縁性基板10上に、Ag系又はAg/Pd系電極材料を1つの表面実装型温度センサ110が形成される領域毎にスクリーン印刷によりパターン形成し、850℃で焼成することで、第1及び第2の膜下電極17a、17b並びに第1〜第3の配線部13a、14a、15aを形成する。   First, an insulating substrate 10 such as an alumina substrate having a large area capable of forming a plurality of surface mount type temperature sensors 110 is prepared, and an Ag-based or Ag / Pd-based electrode material is formed on one surface of the insulating substrate 10. A pattern is formed by screen printing for each region where the mounting type temperature sensor 110 is formed, and is fired at 850 ° C., whereby the first and second subfilm electrodes 17a and 17b and the first to third wiring portions 13a, 14a and 15a are formed.

次に、厚膜のサーミスタ膜を絶縁性基板10上の所定領域にパターン形成して感温抵抗部11を形成する。例えば、絶縁性基板10上に、ペースト状の厚膜サーミスタ材料をスクリーン印刷を用いて矩形状にパターニングした後、850℃で焼成して感温抵抗部11を形成する。また、この際、感温抵抗部11の両端が、第1及び第2の膜下電極17a、17b上に位置するように形成する。   Next, a thick thermistor film is patterned in a predetermined region on the insulating substrate 10 to form the temperature-sensitive resistor portion 11. For example, a paste-like thick film thermistor material is patterned into a rectangular shape on the insulating substrate 10 using screen printing, and then baked at 850 ° C. to form the temperature-sensitive resistor portion 11. At this time, both ends of the temperature-sensitive resistor portion 11 are formed so as to be positioned on the first and second subfilm electrodes 17a and 17b.

さらに、絶縁性基板10上の所定領域に酸化ルテニウム系のペースト状抵抗材料をスクリーン印刷によりパターン形成し、850℃で焼成することで、膜状抵抗部12を形成する。
上記膜状抵抗部12の形成後、絶縁性基板10上にガラスペーストをスクリーン印刷により塗布し、600℃で焼成する。このガラスペーストは、保護膜18の一部として機能する。
Further, a ruthenium oxide-based paste-like resistance material is formed in a predetermined region on the insulating substrate 10 by screen printing and baked at 850 ° C., thereby forming the film-like resistance portion 12.
After the formation of the film-like resistance portion 12, a glass paste is applied on the insulating substrate 10 by screen printing and baked at 600 ° C. This glass paste functions as a part of the protective film 18.

次に、事前に感温抵抗部11のサーミスタ特性を測定しておき、その値に合わせるように、膜状抵抗部12の抵抗を測定しながら、膜状抵抗部12に対してレーザトリミングを行う。
この後、絶縁性基板10上にエポキシ樹脂をスクリーン印刷によりコーティングし、200℃で硬化させることで、保護膜18を形成する。この際、保護膜18は、絶縁性基板10の下面全体を面一にするように凹凸を埋めて形成される。
Next, the thermistor characteristics of the temperature-sensitive resistor portion 11 are measured in advance, and laser trimming is performed on the film-like resistor portion 12 while measuring the resistance of the film-like resistor portion 12 so as to match the value. .
Thereafter, an epoxy resin is coated on the insulating substrate 10 by screen printing and cured at 200 ° C., thereby forming the protective film 18. At this time, the protective film 18 is formed by filling the unevenness so that the entire lower surface of the insulating substrate 10 is flush.

次に、この状態で、平板状の絶縁性基板10を短冊状に一次分割し、その絶縁性基板10の端面に、Ag系樹脂によるAgフィラー入り樹脂電極を所定領域に形成し、さらに、チップ状に二次分割した状態で、絶縁性基板10の端面のAgフィラー入り樹脂電極上に、Niめっき及びSnめっきをこの順で施して第1〜第4の端子電極13〜16を形成することで、表面実装型温度センサ110が作製される。   Next, in this state, the flat insulating substrate 10 is primarily divided into strips, and an Ag filler-containing resin electrode made of Ag-based resin is formed in a predetermined region on the end surface of the insulating substrate 10. The first to fourth terminal electrodes 13 to 16 are formed by performing Ni plating and Sn plating in this order on the Ag filler-containing resin electrode on the end face of the insulating substrate 10 in a state of being divided into a second shape. Thus, the surface mount type temperature sensor 110 is manufactured.

この表面実装型温度センサ110を実装する場合、図3に示すように、感温抵抗部11が形成された下面を実装面として実装基板P上に載置し、第1〜第4の端子電極13〜16をハンダHにより実装基板Pに接着すると共に電気的接続を行う。なお、この実装の際、熱結合端子である第4の端子電極16を、FET等の発熱部品F側に向けて実装基板Pに固定することで、発熱部品Fに第4の端子電極16が近くなり、温度精度及び応答性が向上する。   When mounting the surface mount type temperature sensor 110, as shown in FIG. 3, the lower surface on which the temperature sensitive resistor portion 11 is formed is mounted on the mounting substrate P as a mounting surface, and the first to fourth terminal electrodes are mounted. 13 to 16 are bonded to the mounting substrate P by solder H and electrically connected. At the time of this mounting, the fourth terminal electrode 16 that is a thermal coupling terminal is fixed to the mounting substrate P toward the heat generating component F such as an FET, so that the fourth terminal electrode 16 is attached to the heat generating component F. The temperature accuracy and responsiveness are improved.

このように本実施形態では、感温抵抗部11が実装面となる絶縁性基板10の下面に形成されているので、感温抵抗部11が絶縁性基板10上面から離間しており、絶縁性基板10上面からの熱放散の影響を低減することができ、高い温度精度を得ることができる。また、実装された状態で感温抵抗部11が実装基板Pに接触又は近接するため、実装基板Pからの直接的な熱伝導が得られて応答性を高めることができる。特に、過熱保護用途の場合であってFET等の発熱部品が検出対象となる場合に、この発熱部品との熱結合を図る場合に、検出温度精度を向上させることができるメリットがある。   As described above, in this embodiment, since the temperature-sensitive resistor portion 11 is formed on the lower surface of the insulating substrate 10 serving as a mounting surface, the temperature-sensitive resistor portion 11 is separated from the upper surface of the insulating substrate 10, so The influence of heat dissipation from the upper surface of the substrate 10 can be reduced, and high temperature accuracy can be obtained. In addition, since the temperature sensitive resistor portion 11 is in contact with or close to the mounting substrate P in the mounted state, direct heat conduction from the mounting substrate P can be obtained and responsiveness can be improved. In particular, there is a merit that the detection temperature accuracy can be improved in the case of heat coupling with the heat generating component when the heat generating component such as FET is a detection target in the case of overheating protection.

また、第4の端子電極16を絶縁性基板10の端面及び下面に形成しているので、第4の端子電極16が熱的結合端子として機能し、より高い熱伝導性を得ることができる。
さらに、保護膜18が絶縁性基板10の下面全体を面一にするように形成されているので、実装した際に、絶縁性基板10の下面全体が実装基板P上に密着した状態で固定されることで、下面の感温抵抗部11に対してより効率的に熱の伝導を図ることができる。
Moreover, since the 4th terminal electrode 16 is formed in the end surface and lower surface of the insulating board | substrate 10, the 4th terminal electrode 16 functions as a thermal coupling terminal, and can obtain higher thermal conductivity.
Furthermore, since the protective film 18 is formed so that the entire lower surface of the insulating substrate 10 is flush, the entire lower surface of the insulating substrate 10 is fixed in close contact with the mounting substrate P when mounted. This makes it possible to more efficiently conduct heat to the temperature-sensitive resistance portion 11 on the lower surface.

次に、本発明に係る表面実装型温度センサの第2実施形態について、図4から図6を参照して以下に説明する。なお、以下の各実施形態おいて、上記実施形態で説明した同一の構成要素には同一の符号を付し、その説明は省略する。   Next, a second embodiment of the surface mount type temperature sensor according to the present invention will be described below with reference to FIGS. In the following embodiments, the same constituent elements described in the above embodiments are denoted by the same reference numerals, and description thereof is omitted.

第2実施形態と第1実施形態との異なる点は、第1実施形態では、膜状抵抗部12が感温抵抗部11と同一面である絶縁性基板10の下面に形成されているのに対し、第2実施形態の表面実装型温度センサ120は、図4から図6に示すように、膜状抵抗部12が、絶縁性基板10の上面に形成されている点である。すなわち、第2実施形態の表面実装型温度センサ120では、膜状抵抗部12が感温抵抗部11とは反対側の絶縁性基板10の上面に形成されて感温抵抗部11とは別々の面上に配されている。   The difference between the second embodiment and the first embodiment is that, in the first embodiment, the film-like resistance portion 12 is formed on the lower surface of the insulating substrate 10 that is flush with the temperature-sensitive resistance portion 11. On the other hand, the surface-mounted temperature sensor 120 of the second embodiment is that the film-like resistance portion 12 is formed on the upper surface of the insulating substrate 10 as shown in FIGS. That is, in the surface-mounted temperature sensor 120 of the second embodiment, the film-like resistance portion 12 is formed on the upper surface of the insulating substrate 10 on the side opposite to the temperature-sensitive resistance portion 11 and is separate from the temperature-sensitive resistance portion 11. It is arranged on the surface.

したがって、第2実施形態の表面実装型温度センサ120では、同一面内に感温抵抗部11と膜状抵抗部12とを形成する場合に比べて、絶縁性基板10の面上における膜状抵抗部12及び感温抵抗部11の面積を大きく設定することができる。逆に言えば、同じ面積の感温抵抗部11及び膜状抵抗部12で、絶縁性基板10のチップサイズを小さくすることができ、全体の小型化を図ることができる。また、感温抵抗部11が、膜状抵抗部12の発熱の影響を受け難くなり、より温度精度を高めることができる。   Therefore, in the surface mount type temperature sensor 120 of the second embodiment, the film resistance on the surface of the insulating substrate 10 is compared with the case where the temperature sensitive resistance portion 11 and the film resistance portion 12 are formed in the same plane. The area of the part 12 and the temperature-sensitive resistor part 11 can be set large. In other words, the chip size of the insulating substrate 10 can be reduced by the temperature-sensitive resistor portion 11 and the film-like resistor portion 12 having the same area, and the overall size can be reduced. In addition, the temperature-sensitive resistance portion 11 is less susceptible to the heat generated by the film-like resistance portion 12, and the temperature accuracy can be further improved.

次に、本発明に係る表面実装型温度センサの第3実施形態について、図7及び図8を参照して以下に説明する。   Next, a third embodiment of the surface mount type temperature sensor according to the present invention will be described below with reference to FIGS.

第3実施形態と第2実施形態との異なる点は、第2実施形態では、第4の端子電極16と第3の端子電極15とが絶縁性基板10の同じ端面側に同様の面積で形成されているのに対し、第3実施形態の表面実装型温度センサ130では、図7及び図8に示すように、第4の端子電極36が、絶縁性基板10の互いに対向する一方の端面側に形成され、第1〜3の端子電極33〜35が、絶縁性基板10の互いに対向する他方の端面側に形成され、第4の端子電極36の面積が、第1〜3の端子電極33〜35よりも大きく設定されている点である。   The difference between the third embodiment and the second embodiment is that in the second embodiment, the fourth terminal electrode 16 and the third terminal electrode 15 are formed on the same end face side of the insulating substrate 10 with the same area. In contrast, in the surface mount type temperature sensor 130 of the third embodiment, as shown in FIGS. 7 and 8, the fourth terminal electrode 36 is on one end face side of the insulating substrate 10 facing each other. The first to third terminal electrodes 33 to 35 are formed on the opposite end surfaces of the insulating substrate 10, and the area of the fourth terminal electrode 36 is the first to third terminal electrodes 33. It is the point set larger than -35.

すなわち、第3実施形態の表面実装型温度センサ130では、第4の端子電極36が絶縁性基板10の一端面の全長にわたって形成されている。また、第1の端子電極33と第1の膜下電極部17aとを接続する第1の配線部33a及び第3の端子電極35と第2の膜下電極部17bとを接続する第2の配線部35aが、それぞれ複数折り返されたミアンダ状の細線部とされている。
この表面実装型温度センサ130を実装する場合、FET等の発熱部品F側に第4の端子電極36を向けて実装固定する。
That is, in the surface mount type temperature sensor 130 of the third embodiment, the fourth terminal electrode 36 is formed over the entire length of one end surface of the insulating substrate 10. Further, the first wiring portion 33a that connects the first terminal electrode 33 and the first subfilm electrode portion 17a, and the second wiring that connects the third terminal electrode 35 and the second subfilm electrode portion 17b. The wiring part 35a is a meander-shaped thin line part that is folded back in plural.
When the surface mount type temperature sensor 130 is mounted, the fourth terminal electrode 36 is directed and fixed to the heat generating component F side such as an FET.

このように第3実施形態では、第1〜3の端子電極33〜35と反対側に広い面積で第4の端子電極36が形成されているので、熱結合端子となる第4の端子電極36側をFET等の発熱部品F側に向けて実装することで、大面積の第4の端子電極36により、熱を受け易くすることができると共に、小面積の第1〜3の端子電極33〜35により、熱を逃がし難くすることができる。また、第1の配線部33a及び第2の配線部35aが、ミアンダ状の細線部とされているので、信号ラインからの熱の流出、すなわち、熱が第1の配線部33a及び第2の配線部35aを介して第1の端子電極33及び第3の端子電極35に伝わって放散してしまうことを抑制することができる。   Thus, in 3rd Embodiment, since the 4th terminal electrode 36 is formed in the wide area on the opposite side to the 1st-3rd terminal electrodes 33-35, the 4th terminal electrode 36 used as a thermal coupling terminal is formed. By mounting the side facing the heat-generating component F side such as an FET, the fourth terminal electrode 36 having a large area can easily receive heat, and the first to third terminal electrodes 33 to 33 having a small area. 35 makes it difficult to release heat. Further, since the first wiring portion 33a and the second wiring portion 35a are meander-shaped thin wire portions, the outflow of heat from the signal line, that is, the heat is transferred to the first wiring portion 33a and the second wiring portion 35a. It is possible to suppress the diffusion to the first terminal electrode 33 and the third terminal electrode 35 via the wiring portion 35a.

なお、本発明の技術範囲は上記各実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。   The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

例えば、上記各実施形態では、スクリーン印刷法等を用いて厚膜サーミスタの感温抵抗部を形成しているが、絶縁性基板10上に、フォトリソグラフィ技術によりパターニングを行ってスパッタリングで薄膜サーミスタの感温抵抗部11を形成しても構わない。
また、膜状抵抗部12は、NiCr膜やCr膜等の抵抗薄膜材料で形成しても構わない。
For example, in each of the above embodiments, the temperature-sensitive resistance portion of the thick film thermistor is formed using a screen printing method or the like. However, the thin film thermistor is patterned by sputtering on the insulating substrate 10 by photolithography. The temperature sensitive resistor portion 11 may be formed.
Further, the film-like resistance portion 12 may be formed of a resistance thin film material such as a NiCr film or a Cr film.

本発明に係る第1実施形態の表面実装型温度センサを示す下面図である。It is a bottom view which shows the surface mounted type temperature sensor of 1st Embodiment which concerns on this invention. 第1実施形態の表面実装型温度センサを示す下面側からみた斜視図である。It is the perspective view seen from the lower surface side which shows the surface mount type temperature sensor of 1st Embodiment. 第1実施形態の表面実装型温度センサを示す実装状態の概略断面図である。It is a schematic sectional drawing of the mounting state which shows the surface mount type temperature sensor of 1st Embodiment. 本発明に係る第2実施形態の表面実装型温度センサを示す上面側からみた斜視図である。It is the perspective view seen from the upper surface side which shows the surface mount type temperature sensor of 2nd Embodiment which concerns on this invention. 第2実施形態の表面実装型温度センサを示す下面図である。It is a bottom view which shows the surface mount type temperature sensor of 2nd Embodiment. 第2実施形態の表面実装型温度センサを示す上面図である。It is a top view which shows the surface mount type temperature sensor of 2nd Embodiment. 本発明に係る第3実施形態の表面実装型温度センサを示す上面側からみた斜視図である。It is the perspective view seen from the upper surface side which shows the surface mount type temperature sensor of 3rd Embodiment which concerns on this invention. 第3実施形態の表面実装型温度センサを示す下面図である。It is a bottom view which shows the surface mount type temperature sensor of 3rd Embodiment. サーミスタを利用した一般的な温度検出回路を示す等価回路図である。It is an equivalent circuit diagram showing a general temperature detection circuit using a thermistor.

符号の説明Explanation of symbols

10…絶縁性基板、11…感温抵抗部、12…膜状抵抗部、13、33…第1の端子電極、14、34…第2の端子電極、15、35…第3の端子電極、16、36…第4の端子電極、110、120、130…表面実装型温度センサ   DESCRIPTION OF SYMBOLS 10 ... Insulating substrate, 11 ... Temperature sensitive resistance part, 12 ... Film-like resistance part, 13, 33 ... 1st terminal electrode, 14, 34 ... 2nd terminal electrode, 15, 35 ... 3rd terminal electrode, 16, 36 ... fourth terminal electrode, 110, 120, 130 ... surface mount type temperature sensor

Claims (5)

絶縁性基板と、
前記絶縁性基板の面上に形成されたサーミスタ膜からなる感温抵抗部と、
前記絶縁性基板の面上に形成され前記感温抵抗部と互いの一端同士が電気的に接続された膜状抵抗部と、
前記感温抵抗部の他端に電気的に接続された第1の端子電極と、
前記膜状抵抗部の他端に電気的に接続された第2の端子電極と、
前記感温抵抗部及び前記膜状抵抗部のそれぞれの一端に電気的に接続された第3の端子電極と、を備え、
前記感温抵抗部が、実装面となる前記絶縁性基板の下面に形成されていることを特徴とすることを特徴とする表面実装型温度センサ。
An insulating substrate;
A temperature-sensitive resistor portion made of a thermistor film formed on the surface of the insulating substrate;
A film-like resistor portion formed on the surface of the insulating substrate and electrically connected at one end to the temperature-sensitive resistor portion;
A first terminal electrode electrically connected to the other end of the temperature sensitive resistor;
A second terminal electrode electrically connected to the other end of the film resistor,
A third terminal electrode electrically connected to one end of each of the temperature-sensitive resistance portion and the film-like resistance portion, and
The surface-mount type temperature sensor, wherein the temperature-sensitive resistance portion is formed on a lower surface of the insulating substrate serving as a mounting surface.
請求項1に記載の表面実装型温度センサにおいて、
前記膜状抵抗部が、前記絶縁性基板の上面に形成されていることを特徴とする表面実装型温度センサ。
The surface mount type temperature sensor according to claim 1,
The surface-mount type temperature sensor, wherein the film-like resistance portion is formed on an upper surface of the insulating substrate.
請求項1又は2に記載の表面実装型温度センサにおいて、
前記絶縁性基板の下面及び端面の少なくとも一方に形成され前記第1〜3の端子電極と電気的に絶縁された第4の端子電極を備えていることを特徴とする表面実装型温度センサ。
In the surface mount type temperature sensor according to claim 1 or 2,
A surface-mount type temperature sensor comprising a fourth terminal electrode formed on at least one of a lower surface and an end surface of the insulating substrate and electrically insulated from the first to third terminal electrodes.
請求項3に記載の表面実装型温度センサにおいて、
前記第4の端子電極が、前記絶縁性基板の互いに対向する一方の端面側に形成され、
前記第1〜3の端子電極が、前記絶縁性基板の互いに対向する他方の端面側に形成され、
前記第4の端子電極の面積が、前記第1〜3の端子電極よりも大きく設定されていることを特徴とする表面実装型温度センサ。
In the surface mount type temperature sensor according to claim 3,
The fourth terminal electrode is formed on one end face side of the insulating substrate facing each other;
The first to third terminal electrodes are formed on the other end face sides of the insulating substrate facing each other;
The surface mount type temperature sensor, wherein an area of the fourth terminal electrode is set larger than that of the first to third terminal electrodes.
請求項1から4のいずれか一項に記載の表面実装型温度センサにおいて、
前記感温抵抗部上に、保護膜が形成されており、
前記保護膜が、前記絶縁性基板の下面全体を面一にするように形成されていることを特徴とする表面実装型温度センサ。
In the surface mount type temperature sensor according to any one of claims 1 to 4,
A protective film is formed on the temperature-sensitive resistor portion,
The surface mount type temperature sensor, wherein the protective film is formed so that the entire lower surface of the insulating substrate is flush.
JP2005284664A 2005-09-29 2005-09-29 Surface-mounted temperature sensor Pending JP2007093453A (en)

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JP2009264803A (en) * 2008-04-23 2009-11-12 Murata Mfg Co Ltd Planar temperature detection sensor
KR101057519B1 (en) 2009-03-24 2011-08-17 노기영 Ultra-compact Thermal Control Unit with Surface-Mount Temperature Sensor
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JP2015080050A (en) * 2013-10-15 2015-04-23 セイコーエプソン株式会社 Quantum interference device, atomic oscillator, electronic apparatus and mobile body
JP2015126089A (en) * 2013-12-26 2015-07-06 株式会社デンソー Electronic apparatus
CN106197705A (en) * 2016-08-30 2016-12-07 广东爱晟电子科技有限公司 One quickly responds printer printer temperature sensor without membranous type
JP2018535413A (en) * 2015-11-02 2018-11-29 エプコス アクチエンゲゼルシャフトEpcos Ag Sensor element and method for manufacturing the sensor element
TWI656330B (en) * 2017-03-06 2019-04-11 日商Koa股份有限公司 Temperature sensor component
CN112798128A (en) * 2021-01-25 2021-05-14 唐钢国际工程技术股份有限公司 Thermal resistance-based round coal bunker internal temperature measuring device and installation method thereof
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JP2009264803A (en) * 2008-04-23 2009-11-12 Murata Mfg Co Ltd Planar temperature detection sensor
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CN106197705A (en) * 2016-08-30 2016-12-07 广东爱晟电子科技有限公司 One quickly responds printer printer temperature sensor without membranous type
TWI656330B (en) * 2017-03-06 2019-04-11 日商Koa股份有限公司 Temperature sensor component
WO2021220540A1 (en) * 2020-04-30 2021-11-04 株式会社村田製作所 Temperature sensor array and mounting structure therefor
CN112798128A (en) * 2021-01-25 2021-05-14 唐钢国际工程技术股份有限公司 Thermal resistance-based round coal bunker internal temperature measuring device and installation method thereof

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