JPS5832241Y2 - thick film bridge circuit - Google Patents

thick film bridge circuit

Info

Publication number
JPS5832241Y2
JPS5832241Y2 JP3046779U JP3046779U JPS5832241Y2 JP S5832241 Y2 JPS5832241 Y2 JP S5832241Y2 JP 3046779 U JP3046779 U JP 3046779U JP 3046779 U JP3046779 U JP 3046779U JP S5832241 Y2 JPS5832241 Y2 JP S5832241Y2
Authority
JP
Japan
Prior art keywords
thick film
bridge circuit
film bridge
electrodes
thermistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3046779U
Other languages
Japanese (ja)
Other versions
JPS55132901U (en
Inventor
博巳 戸崎
昭 池上
健夫 長
英夫 有馬
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP3046779U priority Critical patent/JPS5832241Y2/en
Publication of JPS55132901U publication Critical patent/JPS55132901U/ja
Application granted granted Critical
Publication of JPS5832241Y2 publication Critical patent/JPS5832241Y2/en
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は、インピーダンス素子(例えば厚膜抵抗2個お
よび厚膜サーミスフ2個計4個)から成る厚膜ブリッジ
回路の形状に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the form of a thick film bridge circuit consisting of impedance elements (for example, two thick film resistors and two thick film thermistors).

第1図はブリッジ回路図の1例である。FIG. 1 is an example of a bridge circuit diagram.

第1図中のR,、R,は抵抗、 R2,R4はサーミス
タ、E1〜E4は電極である。
In FIG. 1, R and R are resistors, R2 and R4 are thermistors, and E1 to E4 are electrodes.

これを厚膜化したもので最も小型のものとしては、従来
第2図に示すものが知られている。
The most compact version of this thick-film version is conventionally known as shown in FIG. 2.

この第2図(但し図中1は基板、R1゜R3は抵抗、R
2,R4はサーミスタ、E1〜E4は電極である)に示
す構造のものは、小型であるという特長の他に、次の3
つの特長がある。
This figure 2 (in the figure, 1 is the substrate, R1°R3 is the resistance, R
2, R4 is a thermistor, and E1 to E4 are electrodes) has the following three features in addition to being small.
It has two features.

すなわち、(1)フェースダウンボンディングによる接
続が可能、(2)基板中央に穴をあけ、ネジによる固定
が可能であり、またこのため測温の場合には被測温体へ
の付着が容易である。
In other words, (1) it can be connected by face-down bonding, (2) it can be fixed with screws by drilling a hole in the center of the board, and it is therefore easy to attach it to the object to be measured when measuring temperature. be.

(3)抵抗値調節のためのトリミングをする場合、多く
は抵抗体をトリミングするが、第2図でわかるように、
抵抗体が一列になっているため、トリミングが容易であ
る。
(3) When trimming to adjust the resistance value, the resistor is often trimmed, but as shown in Figure 2,
Since the resistors are arranged in a row, trimming is easy.

これらの多くの特長のため、抵抗、サーミスタの抵抗値
の大きい場合は第2図のものが使用されることが多い。
Because of these many features, the one shown in Figure 2 is often used when the resistance value of the resistor or thermistor is large.

しかし、抵抗、サーミスタの抵抗値が小さい場合は第3
図(但し図中1は基板、R1,R3は抵抗、R2,R4
はサーミスタ、E1〜E4は電極である)に示すように
、対向電極の対向距離が長く、対向電極間隔が狭いもの
となる。
However, if the resistance value of the resistor or thermistor is small, the third
Figure (However, in the figure, 1 is the board, R1, R3 are resistors, R2, R4
is a thermistor and E1 to E4 are electrodes), the facing distance of the opposing electrodes is long and the spacing between the opposing electrodes is narrow.

すると結果的に、抵抗およびサーミスタの基板表面に対
する占有面積が狭い割に厚膜基板の全表面積が広くなり
、熱応答性感度を上げるためにもさらに小型化が必要で
あった。
As a result, although the area occupied by the resistor and thermistor on the substrate surface is small, the total surface area of the thick film substrate becomes large, and further miniaturization is required to increase the thermal responsiveness sensitivity.

本考案の目的は厚膜ブリッジ回路において、従来の厚膜
ブリッジ回路の有する特色を損なうことなく、さらに小
型化、小感度化した厚膜ブリッジ回路を提供するにある
An object of the present invention is to provide a thick film bridge circuit that is further miniaturized and has lower sensitivity without impairing the features of conventional thick film bridge circuits.

本考案は厚膜基板の対角線部に、インピーダンス素子(
例えば抵抗およびサーミスタ)が配置され、かつこれら
インピーダンス素子が接続されるように電極を配置する
ことにまり遠戚できる。
In this invention, an impedance element (
For example, resistors and thermistors) are arranged and the electrodes are arranged so that these impedance elements are connected.

以下、本考案を実施例により説明する。The present invention will be explained below with reference to examples.

実施例 第4図は本考案の厚膜ブリッジ回路である。Example FIG. 4 shows the thick film bridge circuit of the present invention.

基板1の各辺から中央に向けてデルタ状に導電ペースト
をスクリーン印刷し、焼成して電極E1〜E4を形成す
る。
A conductive paste is screen printed in a delta shape from each side of the substrate 1 toward the center and fired to form electrodes E1 to E4.

次いで、基板の対角線の位置で相となり合う電極間に抵
抗ペーストおよびサーミスタペーストをスクリーン印刷
し、焼成して抵抗R=、R3とサーミスタR2,R4を
形成し厚膜ブリッジを得た。
Next, a resistor paste and a thermistor paste were screen-printed between electrodes in phase with each other at diagonal positions on the substrate, and fired to form resistors R=, R3 and thermistors R2, R4, thereby obtaining a thick film bridge.

以上述べた如く、本考案によれば厚膜ブリッジ回路は、
従来の約÷の大きさになる利点を持つ。
As described above, according to the present invention, the thick film bridge circuit is
It has the advantage of being approximately ÷ the size of the conventional one.

このことは、熱応答性が従来の2倍の速度になるなどの
性能向上につながると共に材料費の低減をはかることが
できるという利点のあることを示している。
This indicates that there is an advantage that the thermal response is twice as fast as that of the conventional method, leading to improved performance, and that material costs can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はブリッジ回路、第2図、第3図は従来の厚膜ブ
リッジ回路、第4図は本考案の厚膜ブリッジ回路で゛あ
る。 R,、R3:抵抗、R2,R4:サーミスタ、El、R
2゜R3,R4:電極。
FIG. 1 shows a bridge circuit, FIGS. 2 and 3 show a conventional thick film bridge circuit, and FIG. 4 shows a thick film bridge circuit according to the present invention. R,, R3: Resistor, R2, R4: Thermistor, El, R
2°R3, R4: Electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基板の対角線部にインピーダンス素子が配置され、かつ
これらインピーダンス素子が接続される形に電極が配置
されたことを特徴とする厚膜ブリッジ回路。
A thick film bridge circuit characterized in that impedance elements are arranged on diagonal portions of a substrate, and electrodes are arranged in such a way that these impedance elements are connected.
JP3046779U 1979-03-12 1979-03-12 thick film bridge circuit Expired JPS5832241Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3046779U JPS5832241Y2 (en) 1979-03-12 1979-03-12 thick film bridge circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3046779U JPS5832241Y2 (en) 1979-03-12 1979-03-12 thick film bridge circuit

Publications (2)

Publication Number Publication Date
JPS55132901U JPS55132901U (en) 1980-09-20
JPS5832241Y2 true JPS5832241Y2 (en) 1983-07-18

Family

ID=28880181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3046779U Expired JPS5832241Y2 (en) 1979-03-12 1979-03-12 thick film bridge circuit

Country Status (1)

Country Link
JP (1) JPS5832241Y2 (en)

Also Published As

Publication number Publication date
JPS55132901U (en) 1980-09-20

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