JP4487825B2 - Temperature detection element - Google Patents

Temperature detection element Download PDF

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JP4487825B2
JP4487825B2 JP2005096523A JP2005096523A JP4487825B2 JP 4487825 B2 JP4487825 B2 JP 4487825B2 JP 2005096523 A JP2005096523 A JP 2005096523A JP 2005096523 A JP2005096523 A JP 2005096523A JP 4487825 B2 JP4487825 B2 JP 4487825B2
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electrode
terminal electrode
thermistor
temperature detection
detection element
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孝二 四元
由浩 樋口
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Mitsubishi Materials Corp
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Description

本発明は、プリント回路基板等に表面実装され温度検出用や温度補償用等に有効な温度検出素子に関する。   The present invention relates to a temperature detection element that is surface-mounted on a printed circuit board or the like and is effective for temperature detection or temperature compensation.

従来、プリント回路基板に実装されたパワートランジスタやパワーＩＣ等の電子部品が所定以上に過熱して焼損等を起こすことを防止するために、プリント回路基板にチップ型サーミスタ等の温度検出素子を実装して、電子部品等の温度検出が行われている。また、水晶発振子やバッテリ等の温度補償用としても、チップ型サーミスタ等の温度検出素子が用いられている。   Conventionally, a temperature detector such as a chip-type thermistor is mounted on the printed circuit board in order to prevent electronic components such as power transistors and power ICs mounted on the printed circuit board from overheating to a certain extent and causing burning. Thus, temperature detection of electronic components and the like is performed. Further, a temperature detecting element such as a chip type thermistor is also used for temperature compensation of a crystal oscillator or a battery.

例えば、特許文献１には、サーミスタ素子の一面が基板に当接するようにサーミスタ素子の電極非形成部分が両端部の電極より厚く盛り上がっているチップ型サーミスタが提案されている。このチップ型サーミスタは、基板から熱流がサーミスタ素子の両端部及び中央部の３カ所から同時にサーミスタ素子に伝導され、迅速かつ正確に基板の温度変化が検知できるものである。   For example, Patent Document 1 proposes a chip-type thermistor in which the electrode non-formed portion of the thermistor element is raised thicker than the electrodes at both ends so that one surface of the thermistor element is in contact with the substrate. In this chip type thermistor, heat flow from the substrate is simultaneously conducted to the thermistor element from the three ends of the thermistor element and the central part, and the temperature change of the substrate can be detected quickly and accurately.

特開平１１−３０７３０８号公報（特許請求の範囲、図１）Japanese Patent Laid-Open No. 11-307308 (Claims, FIG. 1)

上記従来の技術には、以下の課題が残されている。
すなわち、従来の特許文献１に記載の技術では、サーミスタ素子の一面が厚く盛り上がった電極非形成部分を作製するために別途、成形加工が必要であるが、主材料がセラミックスであるサーミスタ素子の成形加工は加工コストが高く、生産性が悪いという不都合があった。 The following problems remain in the conventional technology.
That is, in the technique described in the conventional patent document 1, in order to produce a non-electrode-forming portion where one surface of the thermistor element is thickly formed, a separate forming process is required. However, the thermistor element whose main material is ceramic is formed. Processing has the disadvantage of high processing costs and poor productivity.

本発明は、前述の課題に鑑みてなされたもので、製造コストの増大を抑制しつつ熱伝導性の向上を図ることができる温度検出素子を提供することを目的とする。   The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a temperature detection element that can improve thermal conductivity while suppressing an increase in manufacturing cost.

本発明は、前記課題を解決するために以下の構成を採用した。すなわち、本発明の温度検出素子は、チップ状のサーミスタ素体の表面に、第１の端子電極と、第２の端子電極と、絶縁性熱受容部と、を設け、前記絶縁性熱受容部が、前記サーミスタ素体の少なくとも実装面となる側面に形成され前記側面で前記第１の端子電極及び前記第２の端子電極に対して面一な又は突出する厚さに設定されていることを特徴とする。   The present invention employs the following configuration in order to solve the above problems. That is, the temperature detection element of the present invention is provided with a first terminal electrode, a second terminal electrode, and an insulating heat receiving portion on the surface of a chip-like thermistor body, and the insulating heat receiving portion. Is formed on at least a side surface which is a mounting surface of the thermistor body, and is set to have a thickness that is flush with or protrudes with respect to the first terminal electrode and the second terminal electrode on the side surface. Features.

この温度検出素子では、絶縁性熱受容部が、サーミスタ素体の少なくとも実装面となる側面に形成され該側面で第１の端子電極及び第２の端子電極に対して面一な又は突出する厚さに設定されているので、基板に実装した状態で、基板に絶縁性熱受容部が接触して効率的に基板からの熱をサーミスタ素体に伝導させることができる。また、サーミスタ素体に対して特別な成形加工を行う必要がなく、実装面に絶縁性熱受容部を設けるので、サーミスタ素体を成形加工するよりも製造コストが低く、優れた生産性を有することができる。さらに、絶縁性の熱受容部であるので、基板とサーミスタ素体との間の電気的接合を低くすることができ、サーミスタ素体への電気的影響を抑制することができる。   In this temperature detection element, the insulating heat receiving portion is formed on at least a side surface which becomes a mounting surface of the thermistor body, and has a thickness which is flush with or protrudes from the first terminal electrode and the second terminal electrode on the side surface. Therefore, the insulating heat receiving portion comes into contact with the substrate while being mounted on the substrate, so that heat from the substrate can be efficiently conducted to the thermistor body. In addition, there is no need to perform a special molding process on the thermistor body, and an insulating heat receiving portion is provided on the mounting surface, so that the manufacturing cost is lower than that of the thermistor body and the productivity is excellent. be able to. Furthermore, since it is an insulating heat receiving part, the electrical junction between the substrate and the thermistor element body can be lowered, and the electrical influence on the thermistor element body can be suppressed.

また、本発明の温度検出素子は、前記第１の端子電極に電気的に接続され前記サーミスタ素体の実装面となる前記側面に直接形成された第１の表面電極と、前記第２の端子電極に電気的に接続され前記サーミスタ素体の実装面となる前記側面に直接形成された第２の表面電極と、前記第１の表面電極及び前記第２の表面電極上に形成された側面絶縁層と、を備え、前記第１の表面電極及び前記第２の表面電極が、所定間隔を空けて互いに対向状態に形成され、前記サーミスタ素体の端部側でそれぞれ前記第１の端子電極及び第２の端子電極に接触して電気的に接続され、前記絶縁性熱受容部が、前記側面絶縁層上に形成されて前記第１の表面電極及び前記第２の表面電極に近接していることを特徴とする。すなわち、この温度検出素子では、第１の表面電極及び第２の表面電極が、絶縁性熱受容部の近傍に形成されているので、サーミスタ特性の決定に大きく寄与する第１の表面電極と第２の表面電極との間の領域に、絶縁性熱受容部によって基板から効率的に熱を伝導させることができ、より良好な熱応答性（より短時間で温度変化に応答する特性）を実現することができる。 The temperature detection element of the present invention includes a first surface electrode that is electrically connected to the first terminal electrode and is directly formed on the side surface serving as a mounting surface of the thermistor body, and the second terminal. A second surface electrode that is electrically connected to the electrode and directly formed on the side surface to be the mounting surface of the thermistor body; and a side surface insulation formed on the first surface electrode and the second surface electrode And the first surface electrode and the second surface electrode are formed to face each other at a predetermined interval, and the first terminal electrode and the second surface electrode respectively on the end side of the thermistor body It is in contact with and electrically connected to the second terminal electrode, and the insulating heat receiving portion is formed on the side surface insulating layer and is close to the first surface electrode and the second surface electrode. It is characterized by that. That is, in this temperature detection element, since the first surface electrode and the second surface electrode are formed in the vicinity of the insulating heat receiving portion, the first surface electrode and the second surface electrode that greatly contribute to the determination of the thermistor characteristics. Heat can be efficiently conducted from the substrate to the region between the two surface electrodes by the insulating heat receiving part, realizing better thermal response (characteristics that respond to temperature changes in a shorter time) can do.

さらに、本発明の温度検出素子は、前記第１の端子電極及び前記第２の端子電極が、前記サーミスタ素体の表面に絶縁層を介して形成されていることを特徴とする。すなわち、この温度検出素子では、第１の表面電極及び第２の表面電極に接続されている第１の端子電極及び第２の端子電極が、サーミスタ素体の表面に絶縁層を介して形成されているので、両端部において第１の端子電極及び第２の端子電極とサーミスタ素体との電気的接合が低くなり、サーミスタ特性を第１の表面電極と第２の表面電極との電極間距離に、より依存させることができる。   Furthermore, the temperature detection element of the present invention is characterized in that the first terminal electrode and the second terminal electrode are formed on the surface of the thermistor body via an insulating layer. That is, in this temperature detection element, the first terminal electrode and the second terminal electrode connected to the first surface electrode and the second surface electrode are formed on the surface of the thermistor body via the insulating layer. Therefore, the electrical connection between the first terminal electrode and the second terminal electrode and the thermistor element body at both ends is lowered, and the thermistor characteristics are determined by the distance between the first surface electrode and the second surface electrode. Can be made more dependent.

また、本発明の温度検出素子は、前記第１の端子電極及び前記第２の端子電極が、金属フィラー含有樹脂で形成された樹脂電極であることを特徴とする。すなわち、この温度検出素子では、第１の端子電極及び前記第２の端子電極が、金属フィラー含有樹脂で形成された樹脂電極であるので、金属電極等に比べて熱伝導性が低く、端子電極からの熱放散を防ぐことができる。   The temperature detection element of the present invention is characterized in that the first terminal electrode and the second terminal electrode are resin electrodes formed of a metal filler-containing resin. That is, in this temperature detection element, since the first terminal electrode and the second terminal electrode are resin electrodes formed of a metal filler-containing resin, the thermal conductivity is lower than that of a metal electrode or the like, and the terminal electrode Heat dissipation from can be prevented.

本発明によれば、以下の効果を奏する。
すなわち、本発明に係る温度検出素子によれば、絶縁性熱受容部が、サーミスタ素体の少なくとも実装面となる側面に形成され該側面で第１の端子電極及び第２の端子電極に対して面一な又は突出する厚さに設定されているので、サーミスタ素体の成形加工が不要であり、基板実装状態で絶縁性熱受容部が基板に接触して効率的に熱伝導を行うことができる。したがって、本発明の温度検出素子によれば、製造コストが低く優れた生産性を有しながら、高精度な温度検出を行うことができる。 The present invention has the following effects.
That is, according to the temperature detection element of the present invention, the insulating heat receiving portion is formed on at least the side surface that becomes the mounting surface of the thermistor element body, and the first terminal electrode and the second terminal electrode are formed on the side surface. Since the thickness is set to be flush or protruding, it is not necessary to mold the thermistor body, and the insulating heat receiving portion can contact the substrate and efficiently conduct heat when mounted on the substrate. it can. Therefore, according to the temperature detection element of the present invention, highly accurate temperature detection can be performed while having low productivity and excellent productivity.

以下、本発明に係る温度検出素子の第１実施形態を、図１を参照しながら説明する。   Hereinafter, a first embodiment of a temperature detection element according to the present invention will be described with reference to FIG.

本実施形態の温度検出素子は、チップ型サーミスタ１であって、図１に示すように、チップ状のサーミスタ素体２の表面に、第１の端子電極３と、第２の端子電極４と、サーミスタ素体２の側面を保護する側面絶縁層５と、絶縁性熱受容部６と、を設けている。
上記サーミスタ素体２としては、ＮＴＣ型、ＰＴＣ型、ＣＴＲ型等のサーミスタがあるが、本実施形態では、ＮＴＣ型サーミスタを採用している。このサーミスタ素体２は、Ｍｎ−Ｃｏ−Ｃｕ系材料、Ｍｎ−Ｃｏ−Ｆｅ系材料等のサーミスタ材料で形成されている。 The temperature detection element of the present embodiment is a chip-type thermistor 1, and as shown in FIG. 1, a first terminal electrode 3, a second terminal electrode 4, and the like are formed on the surface of a chip-like thermistor body 2. The side insulating layer 5 that protects the side surface of the thermistor body 2 and the insulating heat receiving portion 6 are provided.
Examples of the thermistor body 2 include thermistors of the NTC type, the PTC type, the CTR type and the like. In this embodiment, the NTC type thermistor is employed. The thermistor body 2 is made of a thermistor material such as a Mn—Co—Cu material or a Mn—Co—Fe material.

上記第１の端子電極３及び第２の端子電極４は、サーミスタ素体２の端部に直接接着されたＡｇフィラー（金属フィラー）含有樹脂の樹脂電極である。これらの第１の端子電極３及び第２の端子電極４は、例えばサーミスタ素体２の長手方向における端面にＡｇフィラー含有樹脂をスクリーン印刷等による印刷やディップで付け、乾燥後に焼き付けることで形成している。なお、この樹脂電極では、良好なハンダ付け性を維持するように、Ａｇフィラーの含有量が調整されている。
上記側面絶縁層５は、ガラスコートや樹脂コート等で形成されている。 The first terminal electrode 3 and the second terminal electrode 4 are resin electrodes made of Ag filler (metal filler) -containing resin directly bonded to the end of the thermistor body 2. The first terminal electrode 3 and the second terminal electrode 4 are formed, for example, by applying an Ag filler-containing resin to the end face in the longitudinal direction of the thermistor body 2 by printing or dipping by screen printing or the like, and baking after drying. ing. In this resin electrode, the content of the Ag filler is adjusted so as to maintain good solderability.
The side insulating layer 5 is formed of a glass coat or a resin coat.

上記絶縁性熱受容部６は、ガラスコート等の絶縁性保護層である。この絶縁性熱受容部６は、サーミスタ素体２の実装面となる側面２ａに側面絶縁層５を介して形成され、側面２ａで第１の端子電極３及び第２の端子電極４に対して面一な又は突出する厚さに設定されている。すなわち、絶縁性熱受容部６から第１の端子電極３及び第２の端子電極４の厚みを差し引いた厚み差をｄとすると、ｄ≧０に設定されている。なお、絶縁性熱受容部６を、サーミスタ素体２の他の側面にも形成しても構わない。   The insulating heat receiving portion 6 is an insulating protective layer such as a glass coat. The insulating heat receiving portion 6 is formed on the side surface 2 a serving as the mounting surface of the thermistor element body 2 via the side surface insulating layer 5, and the first terminal electrode 3 and the second terminal electrode 4 with respect to the side surface 2 a. The thickness is set to be flush or protruding. That is, if the difference in thickness obtained by subtracting the thickness of the first terminal electrode 3 and the second terminal electrode 4 from the insulating heat receiving portion 6 is d, d ≧ 0 is set. Note that the insulating heat receiving portion 6 may be formed on the other side surface of the thermistor body 2.

このように本実施形態のチップ型サーミスタ１では、絶縁性熱受容部６が、サーミスタ素体２の実装面となる側面２ａに形成され該側面２ａで第１の端子電極３及び第２の端子電極４に対して面一な又は突出する厚さに設定されているので、プリント回路基板に実装した状態で、プリント回路基板に絶縁性熱受容部６が接触して効率的にプリント回路基板からの熱をサーミスタ素体２に伝導させることができる。   As described above, in the chip-type thermistor 1 of the present embodiment, the insulating heat receiving portion 6 is formed on the side surface 2a that is the mounting surface of the thermistor body 2, and the first terminal electrode 3 and the second terminal are formed on the side surface 2a. Since the thickness is set to be flush with or projecting from the electrode 4, the insulating heat receiving portion 6 comes into contact with the printed circuit board in a state where it is mounted on the printed circuit board, and efficiently from the printed circuit board. Can be conducted to the thermistor body 2.

また、サーミスタ素体２に対して特別な成形加工を行う必要がなく、実装面である側面２ａに絶縁性熱受容部６を別途設けるので、サーミスタ素体２を成形加工するよりも製造コストが低く、優れた生産性を有することができる。さらに、サーミスタ素体２との間の電気的接合が低い絶縁性熱受容部６であるので、サーミスタ素体２への電気的影響を抑制することができる。   Further, it is not necessary to perform a special molding process on the thermistor body 2, and the insulating heat receiving portion 6 is separately provided on the side surface 2a that is the mounting surface. Low and can have excellent productivity. Furthermore, since the insulating heat receiving portion 6 has a low electrical connection with the thermistor body 2, the electrical influence on the thermistor body 2 can be suppressed.

さらに、第１の端子電極３及び第２の端子電極４が、Ａｇフィラー含有樹脂で形成された樹脂電極であるので、金属電極等に比べて熱伝導性が低く、これら端子電極からの熱放散を防ぐことができ、より高精度な温度検出が可能になる。   Furthermore, since the first terminal electrode 3 and the second terminal electrode 4 are resin electrodes formed of an Ag filler-containing resin, the thermal conductivity is lower than that of a metal electrode or the like, and heat dissipation from these terminal electrodes. Can be prevented, and more accurate temperature detection becomes possible.

次に、本発明に係る温度検出素子の第２実施形態を、図２を参照しながら説明する。なお、以下の各実施形態の説明において、上記実施形態において説明した同一の構成要素には同一の符号を付し、その説明は省略する。   Next, a second embodiment of the temperature detection element according to the present invention will be described with reference to FIG. In the following description of each embodiment, the same constituent elements described in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted.

第２実施形態と第１実施形態との異なる点は、第１実施形態では、第１の端子電極３と第２の端子電極４との電極間距離でサーミスタ特性が決定されるのに対し、第２実施形態のチップ型サーミスタ（温度検出素子）１０では、図２に示すように、第１の端子電極３に電気的に接続されサーミスタ素体２の側面２ａに直接形成された第１の表面電極１１と、第２の端子電極４に電気的に接続されサーミスタ素体２の側面２ａに直接形成された第２の表面電極１２と、を備え、これらの表面電極の電極間距離がサーミスタ特性の決定に大きく寄与している点である。さらに、第２実施形態では、第１の表面電極１１及び第２の表面電極１２が絶縁性熱受容部６の近傍に形成されている。   The difference between the second embodiment and the first embodiment is that, in the first embodiment, the thermistor characteristics are determined by the inter-electrode distance between the first terminal electrode 3 and the second terminal electrode 4. In the chip-type thermistor (temperature detection element) 10 of the second embodiment, as shown in FIG. 2, the first thermistor body 2 is electrically connected to the first terminal electrode 3 and directly formed on the side surface 2 a. A surface electrode 11 and a second surface electrode 12 that is electrically connected to the second terminal electrode 4 and formed directly on the side surface 2a of the thermistor body 2, and the distance between these surface electrodes is determined by the thermistor. This is a significant contribution to the determination of characteristics. Furthermore, in the second embodiment, the first surface electrode 11 and the second surface electrode 12 are formed in the vicinity of the insulating heat receiving portion 6.

すなわち、第２実施形態では、サーミスタ素体２の側面２ａに第１の表面電極１１及び第２の表面電極１２が所定間隔を空けて互いに対向状態に形成され、サーミスタ素体２の端部側でそれぞれ第１の端子電極３及び第２の端子電極４に接触して電気的に接続されている。これらの第１の表面電極１１及び第２の表面電極１２は、例えばサーミスタ素体２の側面２ａに導電性ペーストをスクリーン印刷等による印刷やディップで付け、乾燥後に焼き付けることで形成されている。   That is, in the second embodiment, the first surface electrode 11 and the second surface electrode 12 are formed on the side surface 2a of the thermistor element body 2 so as to face each other at a predetermined interval. Are in contact with and electrically connected to the first terminal electrode 3 and the second terminal electrode 4 respectively. The first surface electrode 11 and the second surface electrode 12 are formed, for example, by applying a conductive paste to the side surface 2a of the thermistor body 2 by printing or dipping by screen printing or the like, and baking it after drying.

これらの第１の表面電極１１及び第２の表面電極１２上には、側面絶縁層５が形成されている。そして、さらに側面絶縁層５上には、絶縁性熱受容部６が形成されている。したがって、絶縁性熱受容部６は、側面絶縁層５を介して第１の表面電極１１及び第２の表面電極１２に近接して設けられている。   A side insulating layer 5 is formed on the first surface electrode 11 and the second surface electrode 12. Further, an insulating heat receiving portion 6 is formed on the side surface insulating layer 5. Therefore, the insulating heat receiving portion 6 is provided in proximity to the first surface electrode 11 and the second surface electrode 12 with the side surface insulating layer 5 interposed therebetween.

このように本実施形態のチップ型サーミスタ１０では、第１の表面電極１１及び第２の表面電極１２が、絶縁性熱受容部６の近傍に形成されているので、サーミスタ特性の決定に大きく寄与する第１の表面電極１１と第２の表面電極１２との間の領域に、絶縁性熱受容部６によって基板から効率的に熱を伝導させることができ、より良好な熱応答性を実現することができる。   As described above, in the chip-type thermistor 10 according to the present embodiment, the first surface electrode 11 and the second surface electrode 12 are formed in the vicinity of the insulating heat receiving portion 6, and thus greatly contribute to the determination of the thermistor characteristics. Heat can be efficiently conducted from the substrate to the region between the first surface electrode 11 and the second surface electrode 12 by the insulating heat receiving portion 6, thereby realizing better thermal responsiveness. be able to.

次に、本発明に係る温度検出素子の第３実施形態を、図３を参照しながら説明する。   Next, a third embodiment of the temperature detection element according to the present invention will be described with reference to FIG.

第３実施形態と第２実施形態との異なる点は、第２実施形態では、第１の端子電極３及び第２の端子電極４がサーミスタ素体２の端部に直接形成されているのに対し、第３実施形態のチップ型サーミスタ（温度検出素子）２０では、図３に示すように、第１の端子電極３及び第２の端子電極４が、サーミスタ素体２の端面に端面絶縁層２１を介して形成されている点である。なお、第１の端子電極３及び第２の端子電極４とサーミスタ素体２との電気的接続は、第２実施形態と同様に、第１の表面電極１１及び第２の表面電極１２を介して行われている。また、上記端面絶縁層２１は、ガラスコートや樹脂コート等で形成されている。   The difference between the third embodiment and the second embodiment is that, in the second embodiment, the first terminal electrode 3 and the second terminal electrode 4 are formed directly at the end of the thermistor body 2. On the other hand, in the chip type thermistor (temperature detection element) 20 of the third embodiment, the first terminal electrode 3 and the second terminal electrode 4 are connected to the end surface insulating layer on the end surface of the thermistor body 2 as shown in FIG. It is a point formed through 21. The first terminal electrode 3 and the second terminal electrode 4 and the thermistor element body 2 are electrically connected to each other through the first surface electrode 11 and the second surface electrode 12 as in the second embodiment. Has been done. The end face insulating layer 21 is formed of a glass coat or a resin coat.

このように第３実施形態のチップ型サーミスタ２０では、第１の表面電極１１及び第２の表面電極１２に接続されている第１の端子電極３及び第２の端子電極４が、サーミスタ素体２の表面との間に端面絶縁層２１を介して形成されているので、両端部において第１の端子電極３及び第２の端子電極４とサーミスタ素体２との電気的接合が低くなり、サーミスタ特性を、第１の表面電極１１と第２の表面電極１２との電極間距離にさらに依存させることができる。したがって、第１の表面電極１１と第２の表面電極１２との電極間距離により、サーミスタ特性をより高精度に調整することが可能になる。   Thus, in the chip-type thermistor 20 of the third embodiment, the first terminal electrode 3 and the second terminal electrode 4 connected to the first surface electrode 11 and the second surface electrode 12 are the thermistor body. 2 is formed via the end face insulating layer 21 between the two surfaces, the electrical connection between the first terminal electrode 3 and the second terminal electrode 4 and the thermistor body 2 at both ends is reduced, The thermistor characteristics can be further made to depend on the interelectrode distance between the first surface electrode 11 and the second surface electrode 12. Therefore, the thermistor characteristics can be adjusted with higher accuracy by the inter-electrode distance between the first surface electrode 11 and the second surface electrode 12.

なお、本発明の技術範囲は上記各実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば、上記各実施形態の温度検出素子は、サーミスタ部だけを有するチップ型サーミスタ１、１０、２０であるが、サーミスタ部に加えて抵抗部を備えた複合素子（温度検出素子）としても構わない。 The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.
For example, the temperature detection element of each of the above embodiments is the chip type thermistor 1, 10, 20 having only the thermistor part, but may be a composite element (temperature detection element) provided with a resistance part in addition to the thermistor part. .

すなわち、サーミスタ素体２の側面上に、例えばＲｕＯ２等の抵抗体ペーストをスクリーン印刷等で印刷し、乾燥後に焼き付けて抵抗体層を抵抗部として形成してもよい。この場合、サーミスタ素体２の側面に第３の端子電極を、絶縁層を介して別途形成しておき、抵抗部の一端を、第１の端子電極３に電気的に接続すると共に、他端を第３の端子電極に電気的に接続することで、第３の端子電極、抵抗部、第１の端子電極３、ＮＴＣサーミスタのサーミスタ素体２及び第２の端子電極４をこの順に直列に接続した温度検出回路を構成させることができる。これにより、両端部及び側面部に電極を有する有効３端子構造の電圧出力タイプリニア温度センサを得ることができる。 That is, a resistor paste such as RuO 2 may be printed on the side surface of the thermistor element body 2 by screen printing or the like, and baked after drying to form the resistor layer as the resistor portion. In this case, a third terminal electrode is separately formed on the side surface of the thermistor element body 2 via an insulating layer, and one end of the resistance portion is electrically connected to the first terminal electrode 3 and the other end. Are electrically connected to the third terminal electrode, so that the third terminal electrode, the resistor, the first terminal electrode 3, the thermistor body 2 of the NTC thermistor, and the second terminal electrode 4 are arranged in series in this order. A connected temperature detection circuit can be configured. Thereby, the voltage output type linear temperature sensor of the effective three-terminal structure which has an electrode in both ends and a side part can be obtained.

この複合素子では、１チップで電圧出力モードの有効３端子構造を有し、出力電圧／温度特性においてリニア特性を実現して信号処理が容易になる。また、サーミスタ素体２と抵抗部との特性の整合を行うことにより、温度検知精度の向上を図ることができる。さらに、抵抗部を含めた１チップ化により、部品点数及び実装面積の削減を図ることができる。   This composite element has an effective three-terminal structure in a voltage output mode on a single chip, and realizes linear characteristics in output voltage / temperature characteristics to facilitate signal processing. Further, by matching the characteristics of the thermistor body 2 and the resistance portion, it is possible to improve temperature detection accuracy. Furthermore, the number of components and the mounting area can be reduced by using a single chip including the resistance portion.

本発明に係る第１実施形態の温度検出素子を示す断面図である。It is sectional drawing which shows the temperature detection element of 1st Embodiment which concerns on this invention. 本発明に係る第２実施形態の温度検出素子を示す断面図である。It is sectional drawing which shows the temperature detection element of 2nd Embodiment which concerns on this invention. 本発明に係る第３実施形態の温度検出素子を示す断面図である。It is sectional drawing which shows the temperature detection element of 3rd Embodiment which concerns on this invention.

符号の説明Explanation of symbols

１、１０、２０…チップ型サーミスタ（温度検出素子）、２…サーミスタ素体、２ａ…サーミスタ素体の側面、３…第１の端子電極、４…第２の端子電極、６…絶縁性熱受容部、１１…第１の表面電極、１２…第２の表面電極、２１…端面絶縁層
DESCRIPTION OF SYMBOLS 1, 10, 20 ... Chip type thermistor (temperature detection element), 2 ... Thermistor element body, 2a ... Side surface of the thermistor element body, 3 ... First terminal electrode, 4 ... Second terminal electrode, 6 ... Insulating heat Receiving part, 11 ... first surface electrode, 12 ... second surface electrode, 21 ... end face insulating layer

Claims (3)

チップ状のサーミスタ素体の表面に、第１の端子電極と、第２の端子電極と、絶縁性熱受容部と、を設け、
前記絶縁性熱受容部が、前記サーミスタ素体の少なくとも実装面となる側面に形成され前記側面で前記第１の端子電極及び前記第２の端子電極に対して面一な又は突出する厚さに設定され、
前記第１の端子電極に電気的に接続され前記サーミスタ素体の実装面となる前記側面に直接形成された第１の表面電極と、
前記第２の端子電極に電気的に接続され前記サーミスタ素体の実装面となる前記側面に直接形成された第２の表面電極と、
前記第１の表面電極及び前記第２の表面電極上に形成された側面絶縁層と、を備え、
前記第１の表面電極及び前記第２の表面電極が、所定間隔を空けて互いに対向状態に形成され、前記サーミスタ素体の端部側でそれぞれ前記第１の端子電極及び第２の端子電極に接触して電気的に接続され、
前記絶縁性熱受容部が、前記側面絶縁層上に形成されて前記第１の表面電極及び前記第２の表面電極に近接していることを特徴とする温度検出素子。 On the surface of the chip-like thermistor body, a first terminal electrode, a second terminal electrode, and an insulating heat receiving portion are provided,
The insulating heat receiving portion is formed on at least a side surface that becomes a mounting surface of the thermistor body, and has a thickness that is flush with or protrudes with respect to the first terminal electrode and the second terminal electrode on the side surface. Set ,
A first surface electrode that is electrically connected to the first terminal electrode and directly formed on the side surface that is the mounting surface of the thermistor body;
A second surface electrode that is electrically connected to the second terminal electrode and formed directly on the side surface that becomes the mounting surface of the thermistor body;
A side insulating layer formed on the first surface electrode and the second surface electrode, and
The first surface electrode and the second surface electrode are formed to face each other at a predetermined interval, and the first terminal electrode and the second terminal electrode are respectively formed on the end side of the thermistor body. In contact and electrically connected,
The temperature detecting element, wherein the insulating heat receiving portion is formed on the side surface insulating layer and is close to the first surface electrode and the second surface electrode . 請求項１に記載の温度検出素子において、
前記第１の端子電極及び前記第２の端子電極が、前記サーミスタ素体の表面に絶縁層を介して形成されていることを特徴とする温度検出素子。 The temperature detection element according to claim 1 ,
The temperature detecting element, wherein the first terminal electrode and the second terminal electrode are formed on the surface of the thermistor body via an insulating layer. 請求項１又は２に記載の温度検出素子において、
前記第１の端子電極及び前記第２の端子電極が、金属フィラー含有樹脂で形成された樹脂電極であることを特徴とする温度検出素子。 In the temperature detection element according to claim 1 or 2 ,
The temperature detection element, wherein the first terminal electrode and the second terminal electrode are resin electrodes formed of a metal filler-containing resin.
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