JP2007093437A - Probe unit and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe unit which can be aligned with respect to an electronic device being an object for inspection with high accuracy, and to provide its manufacturing method. <P>SOLUTION: The probe unit includes a substrate having through holes, conducting wires which are formed on a first surface of the substrate by the use of lithography and come in contact with the electrodes of a specimen, and inspection alignment marks at least portions of the sidewalls of which are formed in the through holes by the use of the lithography into the shape of columns separated from the sidewalls of the through holes, and are aligned with respect to the specimen in a state of being observed along with the specimen from the second surface side of the substrate being the rear face of the first surface. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe unit and a manufacturing method thereof, and more particularly to alignment of a probe unit and an electronic device to be inspected.

Conventionally, probe units used for inspection of electronic devices such as LSIs and liquid crystal panels are known. As the electronic device to be inspected is highly integrated, it is difficult to align the inspection object with the probe unit. In particular, in the probe unit where the contact part of the fine conductor does not protrude from the substrate, the inspection alignment mark used for alignment with the inspection object is formed on the surface opposite to the conductor of the substrate in a separate process from the conductor There is a need to. When the conductive wire and the inspection alignment mark are formed on both surfaces of the substrate, it is not easy to position the reference mark with respect to the conductive wire with high accuracy. For this reason, a highly accurate alignment between the inspection object and the probe unit using the inspection alignment mark is a problem.
In the probe unit disclosed in Patent Document 1, the substrate is formed of a thin film in which the conductive wire is visible from the opposite side of the substrate. However, since a thin film has a dimensional change due to environmental factors such as temperature, there is a problem that it is difficult to ensure the accuracy of arrangement of conductive wires formed with a narrow pitch.
In the probe unit disclosed in Patent Document 2, the substrate is formed of a sapphire that can visually recognize the conductive wire from the opposite side of the substrate. However, in sapphire, birefringence occurs due to the crystal orientation of the cut surface. As a result, since the inspection object is shown in multiple, it is not easy to align the inspection object and the conductor.

Japanese Patent Laid-Open No. 10-10155 JP-A-62-290144

  The present invention has been created to solve the above-described problems, and an object of the present invention is to provide a probe unit that can be aligned with an electronic device to be inspected with high accuracy, and a method for manufacturing the probe unit.

(1) A probe unit for solving the above-described problem is a substrate having a through hole, a lead formed on the first surface of the substrate using lithography, and contacting a specimen electrode, and at least a part of the side wall Is formed in the through hole in a columnar shape spaced from the side wall of the through hole using lithography, and the part of the side wall spaced from the side wall of the through hole is the back surface of the first surface. An inspection alignment mark that is aligned with the sample in a state of being observed together with the sample from the second surface side.
By forming the inspection alignment mark in the through hole, the mask of the conductive wire and the inspection alignment mark can be formed by lithography from the same first surface side of the substrate, so that it is positioned with high accuracy with respect to the conductive wire. The side wall of the inspection alignment mark can be formed away from the side wall of the hole. In the inspection of the electronic device using the probe unit in which the inspection alignment mark is formed in this way, the inspection alignment mark is passed while observing the inspection alignment mark together with the specimen from the second surface side opposite to the conductor of the substrate. By aligning the part separated from the side wall of the hole with respect to the specimen, the electrode of the specimen and the conducting wire can be aligned with high accuracy.

(2) A probe unit for solving the above-described problem is a substrate having a through hole, a lead formed on the first surface of the substrate using lithography, and contacting a specimen electrode, and at least a part of the side wall A manufacturing alignment mark formed in the through-hole using lithography in a columnar shape spaced apart from the side wall of the through-hole, and the through-hole on the second surface of the substrate that is the back surface of the first surface Formed on the second surface using a mask formed by lithography using the part of the side wall of the manufacturing alignment mark spaced from the side wall as a reference, and observed together with the specimen from the second surface side A test alignment mark that is aligned with the specimen in a state.
By forming the manufacturing alignment mark in the hole, the mask of the conducting wire and the manufacturing alignment mark can be formed by lithography from the same first surface side of the substrate, so that it is positioned with high accuracy with respect to the conducting wire. The side wall of the manufacturing alignment mark can be formed away from the side wall of the hole. By using the part of the manufacturing alignment mark that is separated from the side wall of the through hole as a reference, the mask of the inspection alignment mark is accurately aligned with the conductor by lithography from the second surface side opposite to the conductor of the substrate. Can be formed. In the inspection of electronic devices using the probe unit in which the inspection alignment mark is formed in this way, the inspection alignment mark is aligned with the sample while observing the inspection alignment mark together with the sample from the side opposite to the conductor of the substrate. By doing so, the electrode of the specimen and the conductive wire can be aligned with high accuracy.

(3) The inspection alignment mark may be disposed directly behind the conducting wire.
By forming the inspection alignment mark directly behind the conductor, for example, the inspection alignment mark and the electrode of the specimen can be simultaneously placed in a narrow field of view of the microscope, and the alignment between the specimen electrode and the conductor is facilitated. .

(4) In the method of manufacturing the probe unit for solving the above-described problem, a recess is formed on the first surface of the substrate, and a columnar layer in which at least a part of the side wall is separated from the side wall of the recess is formed by lithography. Forming a conductive wire in contact with an electrode of a specimen on the first surface using lithography, and grinding the second surface of the substrate, which is the back surface of the first surface, Exposing the columnar layer on the second surface.
A recess is formed on the first surface of the substrate on which the conductive wire is formed, a columnar layer serving as an inspection alignment mark is formed in the recess, and the second surface of the substrate that is the back surface of the first surface on which the recess is formed. By grinding the surface, the inspection alignment mark can be exposed on the second surface opposite to the conductor of the substrate. Such an inspection alignment mark can be formed in such a manner that at least a part of the side wall is separated from the side wall of the through hole formed by grinding the bottom of the recess using lithography. In the inspection of the electronic device using the probe unit in which the inspection alignment mark is formed in this manner, the inspection alignment mark is separated from the side wall of the through hole of the inspection alignment mark while observing the inspection alignment mark together with the specimen from the side opposite to the conductor of the substrate. By aligning the processed part with respect to the specimen, the electrode of the specimen and the conductive wire can be aligned with high accuracy.

(5) In the probe unit manufacturing method for solving the above-described problem, a recess is formed on the first surface of the substrate, and a columnar layer having at least a part of the side wall separated from the side wall of the recess is formed by lithography. Forming a conductive wire in contact with the electrode of the specimen on the first surface using lithography, and grinding the second surface of the substrate, which is the back surface of the first surface, The columnar layer is exposed on two surfaces, and the second surface is exposed on the second surface by lithography using the part of the side wall spaced from the side wall of the concave portion of the columnar layer as a reference. Forming a mask, and forming an inspection alignment mark that is observed together with the specimen from the second surface side and aligned with the specimen using the mask on the second face.
A recess is formed on the first surface of the substrate on which the conductive wire is formed, a columnar layer serving as a manufacturing alignment mark is formed in the recess, and the second surface of the substrate that is the back surface of the first surface on which the recess is formed. By grinding the surface, the manufacturing alignment mark can be exposed on the second surface opposite to the conductor of the substrate. Such a manufacturing alignment mark can be formed in a form in which at least a part of the side wall is separated from the side wall of the through hole formed by grinding the bottom of the recess using lithography. Then, by using the part separated from the side wall of the through hole of the manufacturing alignment mark as a reference, the mask of the inspection alignment mark is formed by accurately aligning with the conductor by lithography from the second surface side opposite to the conductor of the substrate. can do. In the inspection of the electronic device using the probe unit in which the inspection alignment mark is formed in this manner, the inspection alignment mark is separated from the side wall of the through hole of the inspection alignment mark while observing the inspection alignment mark together with the specimen from the side opposite to the conductor of the substrate. By aligning the processed part with respect to the specimen, the electrode of the specimen and the conductive wire can be aligned with high accuracy.

(6) After forming the conducting wire, a correction layer for correcting deformation of the substrate is fixed on the first surface, and the second surface of the substrate having the correction layer fixed to the first surface The inspection alignment mark may be formed thereon.
With the correction layer fixed on the first surface of the substrate corrected for deformation of the substrate, the inspection alignment mark mask is opposite to the substrate lead, using the part separated from the side wall of the through hole of the manufacturing alignment mark as a reference. It can be formed in precise alignment with the conductor by lithography from the second surface side. As a result, the inspection alignment mark can be positioned with high accuracy with respect to the conductive wire.

(7) The substrate may be divided at a boundary between a region where the columnar layer is formed and a region where the conducting wire and the inspection alignment mark are formed.
A manufacturing alignment mark after the probe unit is manufactured is not necessary. Therefore, the manufacturing alignment mark may be removed by dividing the substrate at the boundary between the region where the columnar layer is formed and the region where the conducting wire and the inspection alignment mark are formed.

  In the present specification, “... formed on” means “... formed directly on” and “... on the intermediate” unless there is a technical obstruction factor. It is meant to include both “formed through”. In addition, the order of each operation of the method described in the claims is not limited to the order of description unless there is a technical impediment, and may be executed in any order, and may be executed simultaneously. Also good.

Embodiments of the present invention will be described below based on a plurality of examples. In each of the embodiments, the component having the same reference sign corresponds to the component of the other embodiment having the reference sign.
(First Example)
1. Configuration of Probe Unit FIG. 1 is a schematic diagram showing a probe unit according to the first embodiment of the present invention. (A) is a plan view of the probe unit, (B) is a plan view of the probe unit viewed from the side opposite to (A), and (C) is a sectional view taken along line C1-C1 of (A).
As shown in FIG. 1, the probe unit 1 according to the first embodiment includes a substrate 10, a probe 20, an alignment mark 30, an alignment pattern 40, and the like.

  The substrate 10 is a ceramic substrate such as zirconia, alumina, or glass ceramic. The substrate 10 preferably has a thickness of 10 μm to 200 μm. When the substrate 10 is thinly formed as described above, the probe unit 1 can follow the shape of the electronic device by deforming the substrate 10 according to the shape of the electronic device. As a result, the probe unit 1 can be reliably brought into contact with the electronic device. The substrate 10 may be formed of an insulating material other than ceramics.

  The probe 20 as a lead wire contacts the specimen at the time of examination. The probe 20 is formed on the substrate 10 using a metal such as Ni or an alloy such as NiFe, NiMn, NiW, NiP, or NiCo using lithography. The probe 20 is desirably formed to a thickness of 100 μm or less. Hereinafter, the surface of the substrate 10 on which the probe 20 is formed is referred to as “first surface”, and the surface of the substrate 10 on which the probe 20 is not formed is referred to as “second surface”. The probe 20 may be a conductive material other than the metal or alloy described above.

The alignment mark 30 as a manufacturing alignment mark is used as a reference for the alignment pattern 40 when the probe unit 1 is manufactured. The alignment mark 30 is formed in a columnar shape smaller than the diameter of the through hole 12 using lithography at the center of the cylindrical through hole 12 penetrating the substrate 10. That is, the alignment mark 30 is exposed on both sides of the substrate 10, and the side wall of the alignment mark 30 is separated from the side wall of the through hole 12. A mark fixing portion 32 that fixes the alignment mark 30 to the substrate 10 is formed between the side wall of the through hole 12 and the side wall of the alignment mark 30.
As shown in FIG. 2, a part of the alignment mark 30 may be connected to the side wall of the through hole 12. In this case, the probe unit 1 may not include the mark fixing part 32.

  The alignment mark 30 and the mark fixing portion 32 are preferably formed of materials having different colors. Specifically, for example, when the alignment mark 30 is formed of NiFe, the mark fixing portion 32 is formed of Cu, Cu alloy, Ni or the like having a color different from that of NiFe. As will be described later in connection with the method for manufacturing the probe unit 1, the alignment pattern 40 is formed with high precision positioning with respect to the probe 20 using the position of the side wall of the alignment mark 30 as a reference. By forming the alignment mark 30 and the mark fixing portion 32 with materials of different colors, the position of the side wall of the alignment mark 30 can be accurately recognized. The alignment mark 30 and the mark fixing portion 32 may be formed of a material different from the metal or alloy described above.

  The alignment pattern 40 as an inspection alignment mark is positioned with high accuracy with respect to the probe 20. Specifically, for example, the alignment pattern 40 is patterned in substantially the same shape as the probe 20 directly behind the probe 20. The alignment pattern 40 is preferably made of a metal such as Ni, Au, Cr, or Ti, or an alloy such as a Ni alloy, Au alloy, Cr alloy, or Ti alloy, and has a thickness of 10 μm or less. The alignment pattern 40 may have a shape different from that of the probe 20 and may not be arranged directly behind the probe 20.

2. Electronic Device Inspection Method FIG. 3 is a schematic diagram showing an electronic device inspection method using the probe unit 1.
The inspection system of the electronic device 50 as a specimen includes a probe unit 1, an inspection apparatus main body (hereinafter referred to as a prober) 60 to which the probe unit 1 is attached, a microscope 62, and the like.

  As shown in FIG. 3A, the probe unit 1 is fixed to the prober 60 in a posture inclined with respect to the electronic device 50 so that the distal end portion 22 of the probe 20 is located on the electronic device 50 side. The probe 20 is electrically connected to the prober 60 via, for example, a flexible printed wiring board 64. Accordingly, the prober 60 can input an inspection signal to the electronic device 50 or receive an output signal corresponding to the inspection signal of the electronic device 50 via the probe 20. On the side of the alignment pattern 40 of the probe unit 1, a microscope 62 that displays an enlarged image of the electrode 52 and the alignment pattern 40 of the electronic device 50 is disposed.

  First, while observing the alignment pattern 40 together with the electrode 52 of the electronic device 50 from the second surface side of the substrate 10, the probe unit 1 is attached to the electronic device 50 so that the probe 20 has a one-to-one correspondence with the electrode 52 of the electronic device 50. Relatively close. As described above, the alignment pattern 40 is patterned in substantially the same shape as the probe 20 directly behind the probe 20. Therefore, the probe unit 1 and the electrode 52 of the electronic device 50 are moved relative to each other so that the alignment pattern 40 is positioned on the electrode 52 of the electronic device 50 as shown in FIG. And can be aligned.

  Thus, by aligning the probe unit 1 and the electronic device 50 using the alignment pattern 40 positioned with high accuracy with respect to the probe 20, the probe 20 of the probe unit 1 and the electrode 52 of the electronic device 50 Can be aligned with high accuracy. If the alignment pattern 40 is not formed directly behind the probe 20, the probe 20 of the probe unit 1 can be detected using the alignment mark for inspection formed on the electronic device 50 and the alignment pattern 40 of the probe unit 1. The electrode 52 of the electronic device 50 may be aligned.

  When the probe unit 1 comes relatively close to the electronic device 50, the tip portion 22 of the probe 20 comes into contact with the electrode 52 of the electronic device 50. As a result, the prober 60 is electrically connected to the electronic device 50 via the probe unit 1. The prober 60 inspects the electronic device 50 by inputting an inspection signal to the electronic device 50 via the probe 20 of the probe unit 1.

3. Method for Manufacturing Probe Unit FIGS. 4 to 7 are schematic views showing a method for manufacturing the probe unit 1.
First, as shown in FIG. 4A1, a recess 102 is formed in a substrate 100 by mechanical processing such as end milling or milling. The substrate 100 is formed in a process described later to form the substrate 10 of the probe unit 1, and the recess 102 is removed in the process described later to form the through hole 12 of the probe unit 1. Therefore, the recess 102 may be formed in the substrate 100 according to the shape of the through hole 12.

  Next, the columnar layer 104 constituting the alignment mark 30 is formed on the bottom of the recess 102 (see FIG. 4 (A3)). Specifically, for example, the columnar layer 104 is formed as follows. First, as shown in FIG. 4A2, the base layer 106 is formed on the first surface 100a of the substrate 100 by sputtering or the like. Next, a resist film 108 having an opening 108a that exposes part of the base layer 106 formed on the bottom of the recess 102 is formed by lithography. More specifically, a resist is applied to the base layer 106 to form a resist film. Then, a photomask having a predetermined shape is arranged, and the resist film is subjected to exposure and development processing, and unnecessary resist film is removed. Thereby, a resist film 108 is formed on the base layer 106. For removing the resist film, a resist stripping solution such as NMP (N-methyl-2-pyrrolidone) may be used, or it may be removed by ashing. Next, as shown in FIG. 4A3, a metal layer such as NiFe is grown in the opening 108a of the resist film 108 by plating. As a result, a metal columnar layer 104 is formed in the recess 102. The columnar layer 104 may be formed by a method other than plating, such as CVD (Chemical Vapor Deposition). The columnar layer 104 may not be a metal. Further, the step of forming the base layer 106 may be omitted, and the columnar layer 104 may be formed directly on the substrate 100.

Next, as illustrated in FIG. 5A4, a filling layer 110 that fills a space between the sidewall of the recess 102 and the sidewall of the columnar layer 104 is formed. The filling layer 110 is formed, for example, by plating Cu, Cu alloy, Ni or the like on the base layer 106. The filling layer 110 constitutes the mark fixing part 32.
Next, as shown in FIG. 5A5, for example, the filling layer 110, the columnar layer 104, and the base layer 106 are polished by CMP (Chemical Mechanical Polishing) until the substrate 100 is exposed, whereby the substrate 100 and the columnar layer are polished. 104, the underlayer 106, and the filling layer 110 are planarized.

  Next, the probe 20 is formed over the first surface 100a of the substrate 100 outside the recess 102 (see FIG. 6A8). Specifically, for example, the probe 20 is formed as follows. First, as illustrated in FIG. 5A6, the base layer 114 is formed on the planarized substrate 100, the columnar layer 104, the base layer 106, and the filling layer 110 by sputtering or the like. Next, a resist film 116 having an opening 116a that exposes a portion of the base layer 114 where the probe 20 is to be formed is formed on the base layer 114 by lithography. Next, as shown in FIG. 6 (A7), a metal layer such as NiFe is grown in the opening 116a of the resist film 116 by plating. Thereby, the metal probe 20 is formed in the opening 116a. Next, as shown in FIG. 6 (8), the resist film 116 and the unnecessary underlayer 114 other than the probe 20 are removed. The probe 20 may be formed by a method other than plating, such as CVD. Further, the step of forming the base layer 114 may be omitted, and the probe 20 may be formed directly on the substrate 100.

  Next, as shown in FIG. 6A9, the second surface 100b of the substrate 100 is ground until the columnar layer 104 and the filling layer 110 are exposed on the second surface 100b of the substrate 100. Specifically, for example, the columnar layer 104 and the filling layer 110 are exposed on the second surface 100b of the substrate 100 by polishing the second surface 100b of the substrate 100 by CMP or the like. As a result, the bottom of the recess 102 is removed and the through hole 12 is formed.

  As described above, the recess 102 is formed in the first surface 100a of the substrate 100 on which the probe 20 is formed, and the columnar layer 104 serving as the inspection alignment mark is formed in the recess 102, so that the recess 102 is formed. By grinding the second surface 100b of the substrate 100 which is the back surface of the first surface 100a, the alignment mark 30 can be exposed on the second surface 100b on the opposite side of the probe 20 of the substrate 100.

  Next, as shown in FIG. 7 (A10), the correction layer 119 is fixed on the first surface 100a of the substrate 100 with the adhesive layer 118 interposed therebetween. For example, the adhesive layer 118 is an adhesive or a heat-foamable adhesive tape. The correction layer 119 is, for example, a glass plate or a ceramic plate. Although the substrate 100 is deformed when the substrate 100 is thinly formed in the step of grinding the substrate 100 described above, the deformation of the substrate 100 can be corrected by fixing the correction layer 119 to the substrate 100. This step may be performed before the substrate 100 is ground. By fixing the correction layer 119 to the substrate 100 before the step of grinding the substrate 100, it is possible to prevent the substrate 100 from being deformed by grinding the substrate 100. Further, even if the alignment pattern 40 is formed in a state where the substrate 100 is deformed in the process described later, this process is omitted if the alignment pattern 40 positioned with accuracy within the specification range can be formed with respect to the probe 20. May be.

  Next, the alignment pattern 40 is formed over the second surface 100b of the substrate 100 (see FIG. 7A12). Specifically, for example, the alignment pattern 40 is formed as follows. First, as illustrated in FIG. 7A10, the base layer 120 is formed on the second surface 100b of the substrate 100 by sputtering or the like. Next, a resist film 122 as a mask is formed by photolithography, which has an opening 122a that exposes a portion of the base layer 120 where the alignment pattern 40 is to be formed. More specifically, first, a resist is applied to the base layer 120 to form a resist film. Next, using a mask aligner, a photomask having a predetermined shape with respect to the columnar layer 104 is arranged. Next, the resist film is exposed and developed to remove unnecessary resist films. Next, a metal layer such as NiFe is grown in the opening 122a of the resist film 122 by plating. Thereby, the metal alignment pattern 40 is formed. Next, the unnecessary underlayer 120, the correction layer 119, and the adhesive layer 118 other than the resist film 122 and the alignment pattern 40 are removed.

  As described above, by using the columnar layer 104 exposed on the second surface 100b of the substrate 100 as a reference, the mask of the alignment pattern 40 is accurately aligned with the probe 20 by lithography from the second surface 100b side of the substrate 100. Can be formed. As a result, the alignment pattern 40 can be formed with high precision positioning with respect to the probe 20. When forming the columnar layer 104 (see the alignment mark 30 shown in FIG. 2) in which a part of the side wall is connected to the side wall of the recess 102, a portion separated from the side wall of the through hole 12 of the columnar layer 104 is used as a reference. Thus, the mask of the alignment pattern 40 can be accurately aligned with the probe 20 by lithography from the second surface 100b side of the substrate 100.

(Second embodiment)
1. Configuration of Probe Unit and Manufacturing Method Thereof FIG. 8 is a schematic diagram showing a probe unit according to the second embodiment. (A) is a plan view of the probe unit, (B) is a plan view of the probe unit viewed from the side opposite to (A), and (C) is a sectional view taken along line C8-C8 in (A).
The probe unit 2 according to the second embodiment does not include components corresponding to the alignment pattern 40 according to the first embodiment. However, each component of the probe unit 2 shown in FIG. 8 is substantially the same as the corresponding component of the probe unit 1 according to the first embodiment. Therefore, each component of the probe unit 2 can be manufactured by substantially the same process as that of the corresponding component of the probe unit 1 according to the first embodiment.

2. Electronic Device Inspection Method FIG. 9A is a schematic diagram showing an electronic device inspection method using the probe unit 2. FIG. 9B is a schematic diagram showing an electronic device inspection method using a modification of the probe unit 2 in which the alignment marks 30 are formed in a cross shape.
In the inspection of the electronic device 50 using the probe unit 2, the alignment mark 54 of the electronic device 50 and the probe 52 of the probe unit 2 are observed by observing the alignment mark 30 of the probe unit 2 with the microscope 62. And positioning.

  As described in the first embodiment, the alignment mark 30 can be positioned with high accuracy with respect to the probe 20. By using the alignment mark 30 positioned with high accuracy with respect to the probe 20 as an inspection alignment mark, the probe 20 of the probe unit 2 and the electrode 52 of the electronic device 50 can be aligned with high accuracy.

(Third embodiment)
1. Probe Unit Configuration and Electronic Device Inspection Method The probe unit 3 according to the third embodiment does not include components corresponding to the alignment mark 30 according to the first embodiment. However, each component of the probe unit 3 is substantially the same as the corresponding configuration of the probe unit 1 according to the first embodiment. Therefore, the inspection method of the electronic device using the probe unit 3 is substantially the same as the inspection method of the electronic device 50 using the probe unit 1 according to the first embodiment.

2. Probe Unit Manufacturing Method FIG. 10 is a schematic view showing a probe unit manufacturing method according to the third embodiment.
The probe unit 3 before completion is provided with components corresponding to the alignment mark 30 according to the first embodiment. In the manufacturing process of the probe unit 3, first, the alignment pattern 40 is formed in the same manner as the manufacturing process of the probe unit 1 according to the first embodiment. Then, as shown by a dotted line in FIG. 10, the substrate 100 is divided at the boundary between the region where the columnar layer 104 is formed and the region where the probe 20 and the alignment pattern 40 are formed. Thereby, the unnecessary alignment mark 30 can be removed. In addition, although the board | substrate 100 which formed the alignment mark 30 for every probe unit 3 was illustrated and demonstrated, the alignment mark 30 should just be formed in the board | substrate 100 at least one.

(A), (B) is a top view which shows the probe unit by a 1st Example, (C) is sectional drawing by the C1-C1 line | wire of (A). The top view which shows the modification of the probe unit by a 1st Example. The schematic diagram which shows the inspection method using the probe unit by a 1st Example. Sectional drawing which shows the manufacturing method of the probe unit by a 1st Example. Sectional drawing which shows the manufacturing method of the probe unit by a 1st Example. Sectional drawing which shows the manufacturing method of the probe unit by a 1st Example. Sectional drawing which shows the manufacturing method of the probe unit by a 1st Example. (A), (B) is a top view which shows the probe unit by 2nd Example, (C) is sectional drawing by the C8-C8 line | wire of (A). The schematic diagram which shows the test | inspection method using the probe unit by a 2nd Example. The schematic diagram which shows the manufacturing method of the probe unit by a 3rd Example.

Explanation of symbols

1, 2: 3, probe unit, 10: substrate, 12: through hole, 20: probe (conductor), 30: alignment mark (manufacturing alignment mark, inspection alignment mark), 40: alignment pattern (inspection alignment mark), 50 : Electronic device (specimen) 52: Electrode 100: Substrate 100a: First surface 100b: Second surface 102: Recessed portion 104: Columnar layer 119: Correction layer 122: Resist film (mask)

Claims (7)

A substrate having a through hole;
A conductor formed on the first surface of the substrate using lithography and in contact with the electrode of the specimen;
At least a part of the side wall is formed in the through hole in a columnar shape separated from the side wall of the through hole using lithography, and the part of the side wall spaced from the side wall of the through hole is the back surface of the first surface. A test alignment mark that is aligned with the sample in a state of being observed together with the sample from the second surface side of the substrate,
A probe unit comprising: A substrate having a through hole;
A conductor formed on the first surface of the substrate using lithography and in contact with the electrode of the specimen;
A manufacturing alignment mark in which at least a part of the side wall is formed in the through hole using lithography in a columnar shape spaced apart from the side wall of the through hole;
Using a mask formed by lithography using the part of the side wall of the manufacturing alignment mark spaced from the side wall of the through hole on the second surface of the substrate that is the back surface of the first surface. An inspection alignment mark formed on the second surface and aligned with the sample in a state of being observed together with the sample from the second surface side;
A probe unit comprising: The inspection alignment mark is disposed directly behind the conducting wire,
The probe unit according to claim 2. Forming a recess in the first surface of the substrate;
A columnar layer in which at least a part of the side wall is separated from the side wall of the recess is formed on the bottom of the recess using lithography,
On the first surface, a conductive wire that contacts the electrode of the specimen is formed using lithography,
Grinding the second surface of the substrate which is the back surface of the first surface to expose the columnar layer on the second surface;
A method of manufacturing the probe unit. Forming a recess in the first surface of the substrate;
A columnar layer in which at least a part of the side wall is separated from the side wall of the recess is formed on the bottom of the recess using lithography,
Forming a conductive wire in contact with the electrode of the specimen on the first surface using lithography,
By grinding the second surface of the substrate that is the back surface of the first surface, the columnar layer is exposed on the second surface,
Forming a mask on the second surface by lithography using the part of the side wall spaced from the side wall of the concave portion of the columnar layer exposed on the second surface;
An inspection alignment mark that is observed together with the sample from the second surface side and is aligned with the sample is formed on the second surface using the mask.
A method of manufacturing the probe unit. After forming the conducting wire, fix the correction layer for correcting the deformation of the substrate on the first surface,
Forming the inspection alignment mark on the second surface of the substrate with the correction layer fixed to the first surface;
The manufacturing method of the probe unit of Claim 5 including this. The substrate is divided at a boundary between a region where the columnar layer is formed and a region where the conducting wire and the inspection alignment mark are formed.
The manufacturing method of the probe unit of Claim 5 or 6 including this.

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