JP2007132847A - Probe unit and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe unit capable of arraying a plurality of probes, separated by a minute spacing, which are positioned in slits formed on a substrate. <P>SOLUTION: The probe unit comprises the substrate on which a plurality of slits are formed by using lithography; a movable section which is formed inside a sacrificial film formed on a sidewall of the slit and has a void formed between itself and the sidewall by removing the sacrificial film, and whose movement is restricted by the sidewall of the slit in the arraying directions of the plurality of slits; and a plurality of probes, each of which moves along with the movable section, when contacting with the electrode of a specimen. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe unit and a manufacturing method thereof.

Patent Document 1 discloses a probe unit that inserts a probe into a slit formed in a jig. In the probe unit described in Patent Document 1, the probe can be positioned by the slit while restricting movement of the probe in the slit arrangement direction by the side wall of the slit. However, since the slits of the probe unit are formed by machining, a plurality of slits cannot be arranged at a finer interval than the dimensional accuracy of machining, and the probes cannot be arranged at a fine interval.
JP 2001-324515 A

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a probe unit capable of arranging a plurality of probes positioned at slits formed on a substrate at a fine interval. To do.

(1) A probe unit for solving the above problem is formed between a substrate on which a plurality of slits are formed using lithography and a sacrificial film formed on a side wall of the slit, and between the side walls. The movable part has a gap formed by removing the sacrificial film, and the movable part comes into contact with a movable part that is restricted from moving in the arrangement direction of the plurality of slits on the side wall of the slit and the electrode of the specimen. And a plurality of probes having contact portions that move together.
Since the plurality of slits are formed by lithography, these slits can be arranged at fine intervals. Since the movable part of the probe is formed inside the sacrificial film formed on the side wall of the slit, the probe can be positioned with high precision with respect to the slits arranged at fine intervals. That is, the plurality of probes can be arranged at fine intervals.

(2) The probe may be free from the substrate. The probe unit may further include a holding unit that holds the movable portion in the slit, and a biasing unit that biases the contact portion toward the specimen.
By urging the contact portion of the probe released from the substrate to the specimen side by the urging unit, the contact portion can be brought into contact with the electrode of the specimen with an appropriate contact pressure. If the movable part of the probe released from the substrate falls out of the slit, the probe may be displaced in the slit arrangement direction. By holding the movable part of the probe in the slit by the holding unit, the arrangement of the probe slits Deviation in the direction can be prevented.

(3) A part of the probe may be fixed to the substrate, and the contact part may be formed on the remaining part of the probe.
When the contact portion contacts the electrode of the specimen, the remaining portion of the probe that is not fixed to the substrate is deformed. As a result, since the contact portion of the probe moves together with the movable portion, the contact portion of the probe can be brought into contact with the electrode of the specimen with an appropriate contact pressure.

(4) In the method of manufacturing the probe unit for solving the above-described problem, a plurality of slits are formed on a substrate using lithography, a sacrificial film that covers the side walls of the slits is formed, and plating is performed on the inner side of the sacrificial film. Forming a probe and removing at least a portion of the sacrificial layer.
By forming a slit in the substrate using lithography, forming a sacrificial film that covers the side wall of the slit, and forming a conductive film by plating inside the sacrificial film, each of a plurality of slits arranged at fine intervals A plurality of probes can be positioned with high accuracy. That is, a plurality of probes can be arranged at fine intervals. If the sacrificial film formed between the probe formed in this way and the side wall of the slit is all removed, for example, a probe unit comprising a plurality of probes arranged at fine intervals in a manner released from the substrate in the slit Can be formed. Further, for example, if a part of the sacrificial film is left, a probe unit including a plurality of probes arranged at fine intervals in a form in which a part is fixed to the substrate by the remaining sacrificial film can be formed. .

(5) The method for manufacturing the probe unit includes removing a part of the substrate by etching so that a contact portion that contacts the electrode of the specimen of the probe protrudes from the substrate.
It may further include.
By projecting a part of the probe from the substrate, contact portions of a plurality of probes arranged at fine intervals can be formed.

(6) A method of manufacturing a probe unit for solving the above-described problem is that a plurality of slits are formed in a substrate using lithography, a probe is formed in the slit by plating, and a part of the substrate is removed by etching. By doing so, a contact portion that contacts the electrode of the specimen of the probe is protruded from the substrate.
A slit is formed in the substrate using lithography, a probe is formed in the slit by plating, and a part of the substrate is removed by etching, so that each contact portion is arranged in a plurality of slits arranged at fine intervals. A probe unit having a plurality of probes protruding from the substrate can be manufactured.

In this specification, “to form on the top” means “to form directly on the top” and “to form on the top” unless there is a technical obstruction factor. It is meant to include both “forming through an object”.
In addition, the order of each operation of the method described in the claims is not limited to the order of description unless there is a technical impediment, and may be executed in any order, and may be executed simultaneously. Also good.

Hereinafter, embodiments of the present invention will be described based on a plurality of examples. In each of the embodiments, the component having the same reference sign corresponds to the component of the other embodiment having the reference sign.
(First Example)
1. Configuration of Probe Unit FIGS. 1 and 2 are schematic views showing a probe unit according to the first embodiment of the present invention. 1B is a cross-sectional view taken along line B1-B1 of FIG.
The probe unit 1 according to the first embodiment of the present invention includes a substrate 10, a probe 20, a pin 30, and the like.

  The substrate 10 is a ceramic substrate such as SiNx, AlNx, AlOx. The substrate 10 is formed with a plurality of slits 12 and through holes 14 penetrating the side walls of the slits 12. The substrate 10 is not limited to a ceramic substrate. For example, the substrate 10 may be formed of quartz glass, crystallized glass, or the like.

  The probe 20 is made of a metal such as Ni, Pd, Rh, Ir. As shown in FIG. 1B, a through hole 26 having the same shape as the through hole 14 is formed at a portion of the probe 20 facing the through hole 14 of the substrate 10. As the pin 30 passes through the through hole 14 of the substrate 10 and the through hole 26 of the probe 20, the probe 20 released from the substrate 10 is locked to the substrate 10. The through hole 14 and the through hole 26 are long holes that are long in the through direction of the slit 12. As a result, the probe 20 is guided by the pin 30 and can move in the penetration direction of the slit 12.

  The pin 30, the through hole 14 of the substrate 10, and the through hole 26 of the probe 20 correspond to the “holding unit” recited in the claims. The probe 20 may be locked to the substrate 10 with one pin 30 or may be locked to the substrate 10 with three or more pins 30. The pin 30 may be formed of an insulating material such as ceramics or resin, or may be configured by covering the surface of a conductive material such as metal with an insulating material. Further, the through hole 14 and the through hole 26 may have any shape as long as the probe 20 can be locked to the substrate 10 so as to be movable in the penetration direction of the slit 12.

The probe 20 has a movable part 22 and a contact part 24. The movable portion 22 is restricted from moving in the arrangement direction of the slits 12 by the side walls of the slits 12. The contact part 24 moves together with the movable part 22 when contacting the electrode of the specimen. That is, the contact portion 24 can move in the penetration direction of the slit 12 while restricting movement of the slit 12 in the arrangement direction.
The probe 20 is connected to an inspection apparatus main body (hereinafter referred to as a prober) via a cable 40 such as an FPC (Flexible Printed Circuit). For example, an anisotropic conductive film 42 may be used to connect the probe 20 and the cable 40. The probe 20 may be formed of an alloy such as NiFe, NiW, NiMo, NiP.

2. Probe Unit Manufacturing Method FIGS. 3 to 6 are schematic views showing a method for manufacturing the probe unit 1. (A) is a plan view, (B) is a sectional view taken along line B3-B3 in (A), and (C) is a sectional view taken along line C3-C3 in (A).

  First, as shown in FIG. 3 (B1), a seed layer 81 is formed on the first surface 80a of the substrate 80 constituting the substrate 10 of the probe unit 1. Specifically, for example, the seed layer 81 is formed by forming a Cu layer having a thickness of 0.1 μm by sputtering or the like. Note that an adhesive layer that prevents the seed layer 81 from being peeled off from the substrate 80 may be formed on the substrate 80 before the seed layer 81 is formed. The adhesion layer may be formed, for example, by forming a 0.02 μm thick Cr layer by sputtering or the like. Further, the seed layer 81 may be formed by, for example, vapor deposition or CVD (Chemical Vapor Deposition) other than sputtering.

  Next, a sacrificial layer 82 is formed on the seed layer 81. Specifically, for example, the Cu sacrificial layer 82 can be formed by electrolytic plating. The sacrificial layer 82 may be formed of a low melting point metal such as Sn, a resin, or the like. The sacrificial layer 82 may be formed by a method other than electrolytic plating, such as electroless plating or sputtering.

  Next, a slit 83 constituting the slit 12 of the probe unit 1 is formed on the substrate 80 by lithography (see FIG. 3 (C3)). Specifically, for example, the slit 83 is formed as follows. First, as shown in FIG. 3C2, a resist film 84 that exposes a portion of the second surface 80b of the substrate 80 where the slit 83 is formed is exposed on the second surface 80b of the substrate 80, which is the back surface of the first surface 80a. Is formed using lithography. More specifically, a resist is applied on the second surface 80b of the substrate 80, and the solvent is evaporated by baking to form a resist film. Then, a reticle having a predetermined pattern is disposed on the resist film using a stepper or an aligner, and the reticle image is exposed and developed on the resist film to remove an unnecessary resist film. Thereby, a resist film 84 is formed on the second surface 80 b of the substrate 80. The resist film 84 may be formed by performing so-called maskless exposure using an electron beam exposure apparatus, a laser direct drawing apparatus, or the like. By performing maskless exposure, a mask pattern can be baked onto a resist film without using a reticle, which is useful when a large variety of probe units 1 are produced. For removing the unnecessary resist film, a resist stripping solution such as NMP (N-methyl-2-pyrrolidone), acetone, or amine may be used, or may be removed by ashing. Next, as shown in FIG. 3C3, by using the resist film 84 as a mask, a portion of the substrate 80 exposed from the resist film 84 is removed by anisotropic etching, whereby a plurality of slits 83 are formed in the substrate 80. Form. As described above, by forming the slits 83 constituting the slits 12 of the probe unit 1 using lithography, the slits 12 can be arranged at fine intervals.

Next, as shown in FIG. 4C4, a sacrificial film 85 is formed on the side wall of the slit 83 in a self-aligning manner. Specifically, for example, a sacrificial film 85 is formed by forming a 0.5 μm thick Cu layer on the second surface 80 b of the substrate 80 and on the inner wall surface of the slit 83 by CVD, sputtering, or the like.
Next, the conductive layer 86 constituting the probe 20 of the probe unit 1 is formed by electrolytic plating using the sacrificial film 85 formed in a self-aligning manner as a mask. In this manner, the conductive layer 86 constituting the probe 20 of the probe unit 1 is formed by plating using the sacrificial film 85 formed in a self-aligned manner as a mask, so that the probe 20 can be made highly accurate with respect to the slit 12. Can be positioned. The conductive layer 86 may be formed of a metal such as Ni, Pb, Rh, or Ir, or may be formed of an alloy such as NiFe, NiW, NiMo, or NiP. The sacrificial film 85 may be formed by a method other than electrolytic plating, such as CVD.

  Next, as shown in FIG. 4C5, the conductive layer 86 and the sacrificial film 85 are polished by CMP (Chemical Mechanical Polishing) or the like, so that the substrate 80, the sacrificial film 85, and the conductive layer 86 are planarized. The second surface 80 b of the substrate 80 is exposed from the sacrificial film 85. In addition, you may use electrical discharge machining, sandblasting, router processing, etc. for this process.

Next, as shown in FIG. 4C6, the second surface 80b of the substrate 80 is etched, so that the conductive layer 86 and part of the sacrificial layer 82 are protruded from the second surface 80b of the substrate 80.
Next, as shown in FIG. 5C7, the sacrificial layer 82 and the seed layer 81 are removed by polishing the sacrificial layer 82 and the seed layer 81 by CMP or the like. In this step, grinding, electric discharge machining, sand blasting, router processing, or the like may be used.

Next, as shown in FIG. 5 (A8), the substrate 10 of the probe unit 1 is formed by forming a two-dimensional shape of the substrate 80 using a dicer or the like.
Next, a through hole 87 that penetrates the side wall of the slit 83 and the conductive layer 86 in the arrangement direction of the slit 83 is formed using drilling, laser processing, sandblasting, or the like. The through hole 87 corresponds to the through hole 14 of the substrate 10 of the probe unit 1 and the through hole 26 of the probe 20.

  Next, as shown in FIG. 5 (B9), the probe 20 of the probe unit 1 is formed by forming the conductive layer 86. Specifically, for example, the conductive layer 86 is formed by using electric discharge machining, dicer machining, laser machining, electron beam machining, or the like.

Next, as shown in FIG. 6 (C 10), the pin 30 is inserted into the through hole 87.
Next, as shown in FIG. 6C11, the sacrificial film 85 is removed by etching.
According to the probe unit manufacturing method described above, the probe unit 1 can be manufactured.

3. Electronic Device Inspection Method FIG. 7 is a schematic diagram for explaining an electronic device inspection method using the probe unit 1. The inspection system for the electronic device 50 as a specimen includes the probe unit 1, a prober 60, a microscope 70, and the like.

The probe unit 1 is fixed to the jig 62 of the prober 60 via an elastic member 64 as an urging unit in such a posture that the contact portion 24 of the probe 20 faces the electronic device 50 side. Specifically, the elastic member 64 is, for example, a plate-like elastomer or a porous elastic body, and is bonded to the substrate 10 of the probe unit 1, the probe 20, and the jig 62 using, for example, a double-sided tape 66. The urging unit may be a unit composed of a leaf spring, a coil spring, or the like.
The microscope 70 projects an enlarged image of the probe unit 1 and the electrode 52 of the electronic device 50 and is used for alignment of the probe 20 and the electrode 52 of the electronic device 50.

  First, while observing the probe unit 1 together with the electrode 52 of the electronic device 50 using the microscope 70, the probe unit 1 is relatively placed on the electronic device 50 so that the probe 20 has a one-to-one correspondence with the electrode 52 of the electronic device 50. Get close to. Then, the contact part 24 of the probe 20 contacts the electrode 52 of the electronic device 50 (see FIG. 7A). As described above, the plurality of probes 20 can be arranged at fine intervals, and the movement of the contact portions 24 in the arrangement direction is limited by the side wall of the slit 12, so that the inspection of the electronic device 50 using the probe unit 1 is performed. Then, the plurality of probes 20 can be brought into contact with the plurality of electrodes 52 arranged at fine intervals.

  Further, when the probe unit 1 comes relatively close to the electronic device 50, the probe 20 moves in the penetration direction of the slit 12 while deforming the elastic member 64 as shown in FIG. As described above, even when the contact portions 24 of the plurality of probes 20 move individually while deforming the elastic member 64 according to the contact pressure with the electrode 52 of the electronic device 50, even if the height of the electrode 52 varies. The plurality of probes 20 can be reliably brought into contact with the corresponding electrodes 52.

(Second embodiment)
1. Configuration of Probe Unit FIG. 8 is a schematic view showing a probe unit according to the second embodiment of the present invention. (B) is sectional drawing by the B8-B8 line | wire of (A).
Each component of the probe unit 2 according to the second embodiment of the present invention is substantially the same as the corresponding component of the probe unit 1 according to the first embodiment of the present invention except for the probe 220.

As shown in FIG. 8B, the probe 220 includes a movable portion 222, a contact portion 224, a spring portion 228, and the like. The movable part 222 and the contact part 224 are substantially the same as the movable part 22 and the contact part 24 according to the first embodiment of the present invention, respectively. The through hole 226 formed in the probe 220 is substantially the same as the through hole 26 according to the first embodiment of the present invention.
The spring portion 228 extends from the movable portion 222 in a cantilever shape. The contact portion 224 is disposed on the free end side of the spring portion 228. The spring portion 228 only needs to function as a leaf spring that is deformed by contact pressure on the contact portion 224 and the electrode of the electronic device, and may have any shape as long as there is no technical obstruction factor.

2. FIG. 9 is a schematic diagram showing a method for manufacturing the probe unit 2. (A) is a plan view, (B) is a sectional view taken along line B9-B9 in (A), and (C) is a sectional view taken along line C9-C9 in (A).
First, the sacrificial layer 82 and the conductive layer 86 are protruded from the substrate 80 by the same process (see FIGS. 3C1 to 5C7) as the probe unit manufacturing method according to the first embodiment of the present invention. A substrate 80, a sacrificial layer 82, and a conductive layer 86 are formed (see FIG. 9C1).

Next, the conductive layer 86 is formed using electrical discharge machining, dicer machining, laser machining, electron beam machining, or the like. At this time, a notch 280 is formed in the conductive layer 86. By forming the notch 280 in the conductive layer 86, the spring portion 228 of the probe 220 is formed. The subsequent steps are substantially the same as the method for manufacturing the probe unit according to the first embodiment of the present invention.
According to the probe unit manufacturing method described above, the probe unit 2 can be manufactured.

3. Electronic Device Inspection Method FIG. 10 is a schematic diagram for explaining an electronic device inspection method using the probe unit 2. The inspection system according to the second embodiment of the present invention is substantially the same as the inspection system according to the first embodiment of the present invention except for the probe unit 2.
When the probe unit 1 is further moved closer to the electronic device 50 from the state in which the contact portion 224 of the probe 220 is in contact with the electrode 52 of the electronic device 50 (see FIG. 10A), the probe 220 is connected to the spring portion 228. The elastic member 64 is moved in the penetration direction of the slit 12 while being deformed (see FIG. 10B).

Thus, the contact portions 224 of the plurality of probes 220 move individually while deforming the spring portion 228 and the elastic member 64 in accordance with the contact pressure with the electrode 52 of the electronic device 50, thereby varying the height of the electrode 52. Even if there is, the plurality of probes 220 can be reliably brought into contact with the corresponding electrodes 52.
If the variation in the height of the electrode 52 can be absorbed only by the deformation of the spring portion 228, and the plurality of probes 220 can be reliably brought into contact with the corresponding electrode 52, the probe 220 is completely attached to the substrate 10. It may be fixed. Such a probe unit can be manufactured by a part of the manufacturing process of the probe unit 2 (see FIGS. 9A2 and 9B2).

(Third embodiment)
1. Configuration of Probe Unit FIG. 11 is a schematic view showing a probe unit according to the third embodiment of the present invention. (B) is sectional drawing by the B11-B11 line | wire of (A).
Each component of the probe unit 3 according to the third embodiment of the present invention is substantially the same as the corresponding component of the probe unit 1 according to the first embodiment of the present invention except for the probe 320.

  The probe 320 has a movable part 322, a contact part 324, a spring part 328, and the like. The movable part 222 and the contact part 224 are substantially the same as the movable part 22 and the contact part 24 according to the first embodiment of the present invention, respectively. The through hole 326 formed in the probe 320 is substantially the same as the through hole 26 according to the first embodiment of the present invention.

  The spring portion 328 extends from the movable portion 22 in an S shape. And the contact part 324 is arrange | positioned on the opposite side to the surface where the spring part 328 of the movable part 322 is connected. The spring portion 328 only needs to function as a leaf spring that is deformed by contact pressure on the contact portion 324 and the electrode of the electronic device, and may have any shape as long as there is no technical obstruction factor.

2. Probe Unit Manufacturing Method FIG. 12 is a schematic diagram showing a method for manufacturing the probe unit 3. (A) is a plan view, (B) is a sectional view taken along line B12-B12 in (A), and (C) is a sectional view taken along line C12-C12 in (A).
First, by the same process (see FIGS. 3 and 4) as the method of manufacturing the probe unit according to the first embodiment of the present invention, the sacrificial substrate 80 and the sacrificial structure shown in FIGS. 12 (A1), (B1), and (C1) are sacrificed. Layer 82 and conductive layer 86 are formed.

Next, the conductive layer 86 is formed using electrical discharge machining, dicer machining, laser machining, electron beam machining, or the like. At this time, notches 380 and 381 extending from opposite sides in the longitudinal direction of the conductive layer 86 are formed in the conductive layer 86. Thereby, the spring part 328 of the probe 320 is formed. The subsequent steps are substantially the same as the method for manufacturing the probe unit according to the first embodiment of the present invention.
According to the probe unit manufacturing method described above, the probe unit 3 can be manufactured.

3. Electronic Device Inspection Method FIG. 13 is a schematic diagram for explaining an electronic device inspection method using the probe unit 3. The inspection system according to the third embodiment of the present invention is substantially the same as the inspection system according to the first embodiment of the present invention except for the probe unit 3.

  When the probe unit 1 is moved closer to the electronic device 50 from the state in which the contact portion 324 of the probe 320 is in contact with the electrode 52 of the electronic device 50 (see FIG. 13A), as shown in FIG. In addition, the probe 320 moves in the penetration direction of the slit 12 while deforming the spring portion 328 and the elastic member 64.

As described above, the contact portions 324 of the plurality of probes 320 individually move while deforming the spring portion 328 and the elastic member 64 in accordance with the contact pressure with the electrode 52 of the electronic device 50, thereby corresponding to the plurality of probes 220. The electrode 52 can be reliably contacted.
The probe unit 3 may be fixed to the jig 62 of the prober 60 without using the elastic member 64. In this case, the spring portion 328 of the probe 320 functions as an urging unit.
(Fourth embodiment)
1. Configuration of Probe Unit FIG. 14 is a schematic view showing a probe unit according to the fourth embodiment of the present invention. (B) is sectional drawing by the B14-B14 line | wire of (A).

The proximal end portion 428 in the longitudinal direction of the probe 420 according to the fourth embodiment of the present invention is fixed to the substrate 10 via the connection portion 429. As a result, when the contact portion 424 of the probe 420 contacts the electronic device, the contact portion 424 moves in the penetration direction of the slit 12 together with the movable portion 422 due to elastic deformation of the portion other than the proximal end portion 428 of the probe 420. Can do.
Note that the proximal end portion 428 of the probe 420 may be directly fixed to the substrate 10 without using the connection portion 429. Further, the probe 420 may be fixed at a portion other than the near end portion 428 as long as the contact portion 424 can move in the penetration direction of the slit 12. Moreover, the contact part 424 should just be arrange | positioned according to arrangement | positioning of the electrode of an electronic device, and does not need to be arranged linearly in the sequence direction of the slit 12. FIG. For example, as shown in FIG. 15, the contact portions 424 may be arranged in a staggered manner in the arrangement direction of the slits 12.

2. Probe Unit Manufacturing Method FIG. 16 is a schematic diagram showing a method for manufacturing the probe unit 4. (A) is a plan view, (B) is a sectional view taken along line B16-B16 in (A), and (C) is a sectional view taken along line C16-C16 in (A).
First, the sacrificial layer 82 and the seed layer of the embodiment shown in FIG. 16C1 are obtained by the same steps (see FIGS. 3C1 to 4C5) as the manufacturing method of the probe unit according to the first embodiment of the present invention. 81, a substrate 80, a sacrificial film 85, and a conductive layer 86 are formed. The conductive layer 86 constitutes the movable part 422 of the probe 420.

  Next, bumps 480 are formed on the conductive layer 86. Specifically, for example, the bump 480 is formed as follows. First, a resist film 481 that exposes a portion of the conductive layer 86 where the bump 480 is to be formed is formed on the surface of the substrate 80, the sacrificial film 85, and the conductive layer 86 by lithography. Next, bumps 480 are formed by plating an alloy such as NiFe, NiW, NiMo, NiP using the resist film 481 as a mask. The bump 480 constitutes the contact portion 424 of the probe 420. Then, the resist film 481 is removed. The bump 480 may be formed of a conductive material other than an alloy, for example, a metal such as Ni, Pb, Rh, Ir.

Next, as shown in FIG. 16B2, the sacrificial layer 82 and the seed layer 81 are removed by grinding or polishing. The sacrificial layer 82 and the seed layer 81 may be removed by a method other than grinding and polishing. In addition, the sacrificial layer 82 and the seed layer 81 may be removed before the resist film 481 is removed.
Next, as shown in FIG. 16A3, part of the sacrificial film 85 is removed. Specifically, for example, the sacrificial film 85 is removed as follows. First, a resist film 482 that covers the near end of the conductive layer 86 on the side opposite to the bumps 480 in the longitudinal direction is formed by lithography. Next, the sacrificial film 85 exposed from the resist film 481 is removed by etching. The sacrificial film 85 remaining without being removed constitutes the connection portion 429 of the probe unit 4.
According to the probe unit manufacturing method described above, the probe unit 4 can be manufactured.

  In the step of forming the bump 480, by forming a resist film having a predetermined shape, the bump 480 can be arranged according to the arrangement of the electrodes of the electronic device. Specifically, for example, if the bumps 480 are formed using a resist film 483 in which through holes 483a are arranged in a staggered manner in the arrangement direction of the slits 83 as shown in FIG. Arranged bumps 480 can be formed (see the probe unit shown in FIG. 15).

3. Electronic Device Inspection Method FIG. 18 is a schematic diagram for explaining an electronic device inspection method using the probe unit 4. The inspection system according to the fourth embodiment of the present invention includes a probe unit 4, a prober 460, a microscope 70, and the like.

  The probe unit 4 is fixed to the prober 460 without the elastic member 64 so that the contact portion 424 of the probe 420 faces the electronic device 50 side. Specifically, the probe unit 4 is fixed to the prober 460 by fixing the proximal end 428 of the probe 420 and the substrate 10 to the jig 462 using, for example, a double-sided tape 466.

  When the probe unit 4 is further moved closer to the electronic device 50 from the state in which the contact portion 424 of the probe 420 is in contact with the electrode 52 of the electronic device 50 (see FIG. 18A), as shown in FIG. In addition, the portions other than the proximal end portion 428 of the probe 420 move in the penetration direction of the slit 12 while elastically deforming. As described above, the contact portions 424 of the plurality of probes 420 individually move in the penetration direction of the slit 12, so that the plurality of probes 220 can reliably contact the corresponding electrodes 52 even if the height of the electrodes 52 varies. Can be made.

(Fifth embodiment)
1. Configuration of Probe Unit FIG. 19 is a schematic view showing a probe unit according to the fifth embodiment of the present invention. (A) is a plan view, (B) is a sectional view taken along line B19-B19 in (A), and (C) is a sectional view taken along line C19-C19 in (A).

  The substrate 510 is a glass substrate having a predetermined cross-sectional shape (see FIG. 19B). A plurality of slits 512 (see FIG. 15A) is formed in the substrate 510. The substrate 10 is not limited to a glass substrate. For example, the substrate 10 may be formed of ceramics such as SiNx, AlNx, AlOx, or resin.

  The probe 520 is made of a metal such as Ni, Pd, Rh, Ir. As shown in FIG. 15C, the proximal end 528 in the longitudinal direction of the probe 520 is fixed to the substrate 510 through a connection portion 529. The probe 520 extends along the cross-sectional shape of the substrate 510 from the proximal end portion 528 to the side wall of the slit 512 and protrudes from the substrate 510. The contact portion 524 of the probe 520 is disposed at a portion protruding from the substrate 510. Note that the proximal end portion 528 of the probe 520 may be directly fixed to the substrate 510 without using the connection portion 529.

2. Method for Manufacturing Probe Unit FIGS. 20 to 23 are schematic views showing a method for manufacturing the probe unit 5. (A) is a plan view, (B) is a sectional view taken along line B20-B20 in (A), and (C) is a sectional view taken along line C20-C20 in (A).

  First, a concave portion 581 having a smooth inner wall surface is formed on the first surface 580a of the substrate 580 constituting the substrate 510 of the probe unit 5 (see FIGS. 20B2 and 20C2). Specifically, for example, the recess 581 is formed as follows. First, as shown in FIGS. 20B1 and 20C1, a resist film 582 having a recess 582a corresponding to the shape of the recess 581 is formed on the first surface 580a of the substrate 580. In general, a resist film having an arbitrary unevenness can be formed by using a gray mask. Next, the shape of the recess 582a of the resist film 582 is transferred to the substrate 580 using RIE (Reactive Ion Etching). The thickness of the substrate 580 is desirably about 2 mm, and the depth of the center of the recess 581 is desirably 50 to 100 μm. Note that the recess 581 may be formed by machining such as cutting or sand blasting.

Next, as illustrated in FIG. 20B3, a seed layer 583 is formed over the formation surface of the recess 581 of the substrate 580.
Next, a sacrificial layer 584 is formed over the seed layer 583. Specifically, for example, the sacrificial layer 584 of Cu can be formed by electrolytic plating. Note that the sacrificial layer 584 may be formed of a low melting point metal such as Sn, a resin, or the like. The sacrificial layer 584 may be formed by a method other than electrolytic plating, such as electroless plating or sputtering.

Next, as shown in FIG. 21B4, the surface of the sacrificial layer 584 is planarized by polishing or the like.
Next, as illustrated in FIG. 21A5, a slit 585 is formed in the substrate 580. Specifically, for example, the slit 585 is formed as follows. First, on the second surface 580b of the substrate 580, which is the back surface of the first surface 580a, a resist film 586 that exposes a portion where the slit 585 of the second surface 580b of the substrate 580 is to be formed is formed using lithography. Next, using the resist film 586 as a mask, a portion of the substrate 580 exposed from the resist film 586 is removed by anisotropic etching, whereby a plurality of slits 585 are formed in the substrate 580.

Next, as shown in FIG. 21C6, a sacrificial film 587 is formed on the side wall of the slit 585 in a self-aligning manner. Specifically, for example, a sacrificial film 587 is formed by depositing a 0.5 μm thick Cu layer on the second surface 580 b of the substrate 580 and the inner wall surface of the slit 585 by CVD, sputtering, or the like.
Next, a conductive layer 588 constituting the probe 520 of the probe unit 5 is formed by electrolytic plating using the sacrificial film 587 formed in a self-aligned manner as a mask. Note that the conductive layer 588 may be formed of a metal such as Ni, Pb, Rh, or Ir, or may be formed of an alloy such as NiFe, NiW, NiMo, or NiP. The sacrificial film 587 may be formed by a method other than electrolytic plating, such as CVD.

Next, as shown in FIG. 22B7, the cross-sectional shapes of the substrate 580 and the conductive layer 588 are formed by sandblasting, router processing, or the like. Thereby, the probe 520 is formed.
Next, the substrate 510 of the probe unit 5 is formed by forming the two-dimensional shape of the substrate 580 so that the proximal end 588a in the longitudinal direction of the conductive layer 588 protrudes from the substrate 580 (FIG. 22B9). reference). Specifically, for example, the two-dimensional shape of the substrate 580 is formed as follows. First, as illustrated in FIG. 22A8, a resist film 589 that exposes a portion to be removed of the substrate 580 is formed. Next, the portion of the substrate 580 exposed from the resist film 589 is removed by anisotropic etching. Then, the resist film 589 is removed.

Next, as shown in FIG. 23 (B10), the sacrificial layer 584 and the seed layer 583 are removed by using, for example, router processing or electric discharge processing.
Next, the sacrificial film 587 formed between the near end portion 588b of the conductive layer 588 opposite to the near end portion 588a and the substrate 580 is left, and the sacrificial film 587 is removed (FIG. 23B11). reference). Specifically, for example, the sacrificial film 587 is removed as follows. First, a resist film 590 that covers the near end portion 886b of the conductive layer 588 is formed by lithography. Then, the sacrificial film 587 exposed from the resist film 590 is removed by etching. The remaining seed layer 81 corresponds to the connection portion 529 of the probe unit 5.

3. Electronic Device Inspection Method FIG. 24 is a schematic diagram for explaining an electronic device inspection method using the probe unit 5.
The inspection system according to the fifth embodiment of the present invention is substantially the same as the inspection system according to the fourth embodiment of the present invention except for the probe unit 5. In the inspection of the electronic device using the probe unit 5, the contact portion 524 of the probe 520 protruding from the substrate 580 is brought into contact with the electrode 52 of the electronic device 50.

(Sixth embodiment)
1. Configuration of Probe Unit FIG. 25 is a schematic view showing a probe unit according to the sixth embodiment of the present invention. (A) is a top view, (B) is sectional drawing by the B25-B25 line | wire of (A).

An opening 616 that communicates with the plurality of slits 612 is formed in the substrate 610.
A proximal end portion 620 a in the longitudinal direction of the probe 620 is fixed to the substrate 610 through a connection portion 629. The probe 620 extends while being guided by the side wall of the slit 612 from the near end 620 a and protrudes into the opening 616. The contact portion 624 of the probe 620 is disposed at a portion protruding from the opening 616 of the probe 620. As described above, by projecting the plurality of probes 620 into the opening 616 from a plurality of directions, the contact portions 624 of the plurality of probes 620 can be variously arranged. As a result, in the inspection of the electronic device using the probe unit 6, it is possible to conduct to a plurality of electrodes of the electronic device at once (see FIG. 26).

2. Probing Unit Manufacturing Method First, as shown in FIGS. 27A1 and 27B1, convex portions 681 arranged in two rows are formed on a substrate 680. FIG. Specifically, for example, the convex portion 681 is formed as follows. First, a resist film 682 is formed to cover a portion where the convex portion 681 of the substrate 680 is to be formed. Then, the substrate 680 exposed from the resist film 682 is anisotropically etched to form a convex portion 681 on the substrate 680.

Next, as shown in FIG. 27B2, a seed layer 683 is formed by CVD, sputtering, or the like on the first surface 680a of the substrate 680 where the convex portions 681 are formed.
Next, as illustrated in FIG. 27B3, a sacrificial layer 684 is formed over the seed layer 683. Specifically, for example, the sacrificial layer 684 is formed as follows. First, a Cu layer is formed on the seed layer 683 by electrolytic plating. Then, the surface of the Cu layer is planarized by polishing with CMP or the like. As a result, a sacrificial layer 684 of Cu is formed on the seed layer 683. The sacrificial layer 82 may be formed of a low melting point metal such as Sn, a resin, or the like. The sacrificial layer 82 may be formed by a method other than electrolytic plating, such as electroless plating or sputtering.

  Next, as shown in FIGS. 28A4 and 28B4, by removing a plurality of rectangular regions each including the convex portion 681 of the substrate 680, the slits 685 arranged in two rows are formed on the substrate 680 by lithography. It forms using. The slit 685 constitutes a slit 612 of the probe unit 6. Specifically, for example, the slit 685 is formed as follows. First, on the second surface 680b of the substrate 680, which is the back surface of the first surface 680a, a resist film 686 that exposes a portion for forming the slit 685 of the second surface 680b of the substrate 680 is formed by lithography. Then, as shown in FIG. 28C3, a plurality of slits 685 are formed in the substrate 80 by removing the portions of the substrate 80 exposed from the resist film 84 by anisotropic etching using the resist film 84 as a mask. To do. Since the convex portion 681 of the substrate 680 is removed, a concave portion 684 a to which the convex portion 681 is transferred is formed in the sacrificial layer 684 exposed from the slit 685.

  Next, as shown in FIG. 28B5, a sacrificial film 687 is formed on the side wall of the slit 685 in a self-aligning manner. Specifically, for example, a sacrificial film 687 is formed by depositing a 0.5 μm thick Cu layer on the second surface 680 b of the substrate 680 and the inner wall surface of the slit 685 by CVD, sputtering, or the like.

Next, a conductive layer 689 is formed by electrolytic plating using the sacrificial film 687 formed in a self-aligning manner as a mask. The conductive layer 689 corresponds to the probe 620 of the probe unit 6, and the portion formed in the recess 684 a of the conductive layer 689 corresponds to the contact portion 624 of the probe 620.
Next, as illustrated in FIG. 28B6, the conductive layer 689 and the sacrificial film 687 are polished by CMP or the like, so that the substrate 680, the sacrificial film 687, and the conductive layer 689 are planarized, and the substrate 680 is formed. The two surfaces 680b are exposed from the sacrificial film 687.

  Next, as illustrated in FIG. 29A7, an opening 690 from which a plurality of opposed near end portions 689a of the conductive layers 689 arranged in two rows protrude is formed in the substrate 680. Specifically, for example, the opening 690 is formed as follows. First, a resist film 691 that exposes a portion of the substrate 680 where the opening 690 is to be formed is formed on the second surface 680 b of the substrate 680. Next, an opening 690 is formed in the substrate 680 by removing a portion exposed from the resist film 691 of the substrate 680. Then, the resist film 691 is removed.

Next, as shown in FIG. 29B8, the sacrificial layer 684 and the seed layer 683 are removed by router processing, electric discharge processing, or the like.
Next, as illustrated in FIG. 29A9, a part of the sacrificial film 687 is removed, so that a movable portion of the probe 620 is formed. Specifically, for example, the sacrificial film 687 is removed as follows. First, a resist film 692 that covers the vicinity of the sacrificial film 687 formed between the near end portion 689b of the conductive layer 689 opposite to the near end portion 689a and the side wall of the slit 685 is formed over the substrate 680. Next, the sacrificial film 687 exposed from the resist film 692 is removed. Thereby, the movable part of the probe 620 is formed. Then, the resist film 692 is removed.
According to the manufacturing method described above, the probe unit 6 can be manufactured.

(Seventh embodiment)
1. Configuration of Probe Unit FIG. 30 is a schematic view showing a probe unit according to the seventh embodiment of the present invention. (B) is sectional drawing by the B30-B30 line | wire of (A).
In the substrate 710 of the probe unit 7 according to the seventh embodiment of the present invention, slits 712 arranged in a plurality of rows are formed.
In the plurality of slits 712, a probe 720 that is practically the same as the probe 420 according to the fourth embodiment of the present invention is fixed via a connection portion 729.
Thus, by arranging the plurality of probes 720 in a plurality of rows, the contact portions 724 of the plurality of probes 620 can be variously arranged. Therefore, in the inspection of the electronic device using the probe unit 7, it is possible to conduct to a plurality of electrodes at once. The inspection system using the probe unit 7 is substantially the same as the inspection system according to the sixth embodiment of the present invention (see FIG. 26).

2. Probe Unit Manufacturing Method FIGS. 31 and 32 are schematic views showing a method of manufacturing the probe unit 7. (A) is a plan view, (B) is a sectional view taken along line B31-B31 in (A), and (C) is a sectional view taken along line C31-C31 in (A).
First, a plurality of through-holes 784 arranged in two rows are formed in a three-layer composite substrate 780 using lithography. The through hole 784 penetrates the third layer 783 and the second layer 782 of the composite substrate 780 and exposes the first layer 781. Specifically, for example, the through hole 784 is formed as follows. First, a resist film 785 that exposes a portion of the third layer 783 where the through hole 784 is to be formed is formed on the third layer 783 by lithography. Next, the third layer 783 and the second layer 782 exposed from the resist film 785 are removed by anisotropic etching, whereby a through hole 784 is formed in the composite substrate 780. Then, the resist film 785 is removed.

  Next, a plurality of slits 786 arranged in two rows are formed in the third layer 783 using lithography in the same manner as the through holes 784. The plurality of slits 786 are formed so that the first layer 781 is exposed from the through holes 784 penetrating the second layer 782 respectively. The slit 786 constitutes a slit 712 of the probe unit 7.

  Next, a sacrificial film 787 is formed in a self-aligned manner on the surfaces of the first layer 781, the second layer 782, and the third layer 783 on the side where the through holes 784 and the slits 786 are formed. Specifically, for example, the sacrificial film 787 is formed as follows. First, a seed layer is formed on the surfaces of the first layer 781, the second layer 782, and the third layer 783 on the side where the through holes 784 and the slits 786 are formed by sputtering or the like. The seed layer is, for example, a Cu film.

Next, a conductive layer 788 in which the through hole 784 and the slit 786 are buried is formed by plating using the sacrificial film 787 as a mask. The conductive layer 788 corresponds to the probe 720 of the probe unit 7, and the portion formed in the through hole 784 of the conductive layer 788 corresponds to the contact portion 724 of the probe 720.
Next, the conductive layer 788 and the sacrificial film 787 are polished by CMP or the like, so that the third layer 783, the sacrificial film 787, and the conductive layer 788 are planarized, and the third layer 783 is exposed from the sacrificial film 787.

  Next, part of the sacrificial film 787 is removed, so that the movable portion 722 of the probe 720 is formed (see FIG. 32A6). Specifically, for example, the sacrificial film 787 is removed as follows. First, as shown in FIG. 32A5, a third resist film 789 covering the vicinity of the sacrificial film 787 formed between the proximal end 788a on the outer side in the longitudinal direction of the conductive layer 788 and the third layer 783 is formed. Formed on layer 783. Next, as shown in FIG. 32A6, the sacrificial film 787 exposed from the resist film 789 is removed. Thereby, the movable part 722 of the probe 720 is formed. Then, the resist film 789 is removed.

  Next, the two-dimensional shape of the composite substrate 780 is formed, and the first layer 781 and the second layer 782 are removed. According to the probe unit manufacturing method described above, the probe unit 7 can be manufactured.

(Eighth Example)
1. Configuration of Probe Unit FIG. 33 is a schematic view showing a probe unit according to the eighth embodiment of the present invention. (A) is a plan view, (B) is a sectional view taken along line B33-B33 in (A), and (C) is a sectional view taken along line C33-C33 in (A).

The probe unit 8 according to the eighth embodiment of the present invention is substantially the same as the probe unit 5 according to the fifth embodiment of the present invention except for the shapes of the substrate 810 and the probe 820.
As shown in FIG. 33B, the cross-sectional shape of the substrate 810 is a wave shape.
A proximal end 828 in the longitudinal direction of the probe 820 is fixed to the substrate 810 through a connection portion 829. The probe 820 meanders along the wave shape of the substrate 810 between the proximal end portion 828 and the side wall of the slit 812 and protrudes from the substrate 810. The contact portion 824 of the probe 820 is the tip of the probe 820.

2. Method for Manufacturing Probe Unit FIGS. 34 to 40 are schematic views showing a method for manufacturing the probe unit 8. 34A to 38A are plan views, FIG. 34B is a sectional view taken along line B31-B31 in FIG. 34A, and FIG. 34C is a sectional view taken along line C34-C34 in FIG. 39A and 39A are plan views, FIG. 39B is a cross-sectional view taken along line B39-B39 in FIG. 39A, FIG. 39C is a cross-sectional view taken along line C39-C39 in FIG. It is sectional drawing by the D39-D39 line of A).

  First, a wave shape corresponding to the cross-sectional shape of the probe 820 in the longitudinal direction is formed on the substrate 880 (see FIG. 34B2). Specifically, for example, a wave shape is formed on the substrate 880 as follows. First, as shown in FIG. 34B1, a resist film 800 having a waveform on the surface is formed using a gray mask. Next, the shape of the resist film 800 is transferred to the substrate 880 using RIE. More specifically, the substrate 880 is formed on a glass substrate having a thickness of 2 mm, and a wave shape having a thickness difference between the thickest portion and the thinnest portion of 50 μm to 100 μm, that is, a height difference of 50 μm to 100 μm. Note that the wave shape of the substrate 880 may be formed by machining such as cutting and sandblasting.

  Next, as shown in FIG. 35B3, a sacrificial layer 881 is formed over the first surface 880a on which the wave shape of the substrate 880 is formed. Specifically, for example, the sacrificial layer 881 is formed as follows. First, a seed layer 882 is formed on the first surface 880a of the substrate 880 by sputtering or the like. Next, a sacrificial layer 881 is formed on the seed layer 882 by electrolytic plating. Note that the sacrificial layer 881 may be formed by a method other than electrolytic plating.

Next, as shown in FIG. 35B4, the surface of the sacrificial layer 881 is planarized by polishing the sacrificial layer 881 with CMP or the like.
Next, as shown in FIG. 36 (A5), slits 883 that constitute the slits 812 of the probe unit 8 are formed on the substrate 880 by lithography. Specifically, for example, the slit 883 is formed as follows. First, on the second surface 880b of the substrate 880, which is the back surface of the first surface 880a, a resist film 884 that exposes a portion of the substrate 880 where the slit 883 is to be formed is formed using lithography. Next, the substrate 880 exposed from the resist film 884 is removed by anisotropic etching, whereby a slit 883 is formed in the substrate 880.

  Next, a sacrificial film 885 is formed in a self-aligned manner on the side wall of the slit 883 (see FIG. 37B7). Specifically, for example, the sacrificial film 885 is formed as follows. First, as shown in FIG. 36 (B6), a SiOx film is formed on the seed layer 882 exposed from the slit 883 and the surface of the substrate 880 by plasma CVD, sputtering, or the like. The SiOx film is preferably about 1 μm. Then, as shown in FIG. 37 (B7), the SiOx film outside the slit 883 and the SiOx film on the seed layer 882 exposed from the slit 883 are removed by anisotropic etching, so that only the sidewall of the slit 883 is removed. The sacrificial film 885 is left. As a result, a SiOx sacrificial film 885 is formed on the side wall of the slit 883.

  Next, as shown in FIG. 37B8, a conductive layer 886 meandering along the waveform of the substrate 880 is formed over the seed layer 882 exposed from the slit 883. The conductive layer 886 constitutes the probe 820 of the probe unit 8. Specifically, for example, a Ni conductive layer 886 is formed by forming a 20 μm Ni film on the seed layer 882 by electrolytic plating. As described above, probes having various shapes can be formed by transferring the surface shape of the substrate 880.

  Next, as shown in FIG. 38 (B9), the contact portion 824 of the probe 820 is formed by forming the longitudinal end 886a of the conductive layer 886 in the longitudinal direction. Specifically, for example, a part of the proximal end portion 886a of the conductive layer 886 is removed together with the substrate 880 and the sacrificial layer 881 by using grinding processing, polishing processing, router processing, sand blast processing, or the like. The near end 886a is formed. The tip of the conductive layer 886 on the side of the proximal end portion 886 a is a contact portion 824 of the probe 820.

  Next, as illustrated in FIG. 38 (B10), the near end 886b opposite to the near end 886a of the conductive layer 886 is protruded from the substrate 880. Specifically, for example, first, a resist film 887 that exposes the substrate 880 in the vicinity of the near end portion 886b of the conductive layer 886 is formed. Then, the surface of the substrate 880 exposed from the resist film 887 is etched until the near end portion 886b of the conductive layer 886 protrudes from the substrate 880, so that the substrate 880 near the near end portion 886b of the conductive layer 886 is thinned. .

  Next, as illustrated in FIG. 39B11, the two-dimensional shape of the substrate 880 is formed so that the contact portion 24 of the probe 820 protrudes from the substrate 880. Specifically, for example, the two-dimensional shape of the substrate 880 is formed as follows. First, a resist film 888 that exposes a portion to be removed of the substrate 880 is formed. Next, the portion of the substrate 880 exposed from the resist film 888 is removed by anisotropic etching. Then, the resist film 888 is removed.

  Next, as illustrated in FIG. 39A12, the movable portion 822 of the probe 820 is formed by removing part of the sacrificial film 885. Specifically, for example, the sacrificial film 885 is removed as follows. First, a resist film 889 that covers the vicinity of the sacrificial film 885 formed between the near end 886 b of the conductive layer 886 and the side wall of the slit 883 is formed over the substrate 880. Next, the sacrificial film 885 exposed from the resist film 889 is removed. Thereby, the movable part 822 of the probe 820 is formed. Then, the resist film 889 is removed.

Next, as shown in FIG. 40 (A13), the two-dimensional shape of the substrate 880 is formed using dicer processing, router processing, or the like, and as shown in FIG. 40 (B14), the sacrificial layer 881 and the seed layer 882 are formed. Remove.
According to the probe unit manufacturing method described above, the probe unit 8 can be manufactured.

3. Electronic Device Inspection Method FIG. 41 is a schematic diagram for explaining an electronic device inspection method using the probe unit 8. The inspection system of the electronic device 50 as a specimen includes a probe unit 8, a prober 860, a microscope 70, and the like. The probe unit 8 is fixed to the jig 862 of the prober 860 so that the extending direction of the probe 820 is vertically downward.

  When the probe unit 8 is moved closer to the electronic device 50 from the state in which the contact portion 824 of the probe 820 is in contact with the electrode 52 of the electronic device 50 (see FIG. 41A), the meandering probe 820 expands and contracts. (See FIG. 41B). As described above, the contact portions 824 of the plurality of probes 820 expand and contract individually according to the contact pressure with the electrode 52 of the electronic device 50, so that the plurality of probes 820 can be handled even if the height of the electrode 52 varies. It is possible to reliably contact the electrode 52 to be performed.

The schematic diagram which shows the probe unit by a 1st Example. The schematic diagram which shows the probe unit by a 1st Example. The schematic diagram which shows the manufacturing method of the probe unit by a 1st Example. The schematic diagram which shows the manufacturing method of the probe unit by a 1st Example. The schematic diagram which shows the manufacturing method of the probe unit by a 1st Example. The schematic diagram which shows the manufacturing method of the probe unit by a 1st Example. The schematic diagram for demonstrating the test | inspection method of the electronic device which concerns on a 1st Example. The schematic diagram which shows the probe unit by a 2nd Example. The schematic diagram which shows the manufacturing method of the probe unit by a 2nd Example. The schematic diagram for demonstrating the inspection method of the electronic device which concerns on a 2nd Example. The schematic diagram which shows the probe unit by a 3rd Example. The schematic diagram which shows the manufacturing method of the probe unit by a 3rd Example. The schematic diagram for demonstrating the inspection method of the electronic device which concerns on a 3rd Example. The schematic diagram which shows the probe unit by 4th Example. The schematic diagram which shows the modification of the probe unit by 4th Example. The schematic diagram which shows the manufacturing method of the probe unit by 4th Example. The schematic diagram which shows the manufacturing method of the probe unit by 4th Example. The schematic diagram for demonstrating the inspection method of the electronic device which concerns on 4th Example. The schematic diagram which shows the probe unit by 5th Example. The schematic diagram which shows the manufacturing method of the probe unit by 5th Example. The schematic diagram which shows the manufacturing method of the probe unit by 5th Example. The schematic diagram which shows the manufacturing method of the probe unit by 5th Example. The schematic diagram which shows the manufacturing method of the probe unit by 5th Example. The schematic diagram for demonstrating the inspection method of the electronic device which concerns on 5th Example. The schematic diagram which shows the probe unit by 6th Example. The schematic diagram for demonstrating the inspection method of the electronic device which concerns on a 6th Example. The schematic diagram which shows the manufacturing method of the probe unit by 6th Example. The schematic diagram which shows the manufacturing method of the probe unit by 6th Example. The schematic diagram which shows the manufacturing method of the probe unit by 6th Example. The schematic diagram which shows the probe unit by 7th Example. The schematic diagram which shows the manufacturing method of the probe unit by 7th Example. The schematic diagram which shows the manufacturing method of the probe unit by 7th Example. The schematic diagram which shows the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram which shows the manufacturing method of the probe unit by 8th Example. The schematic diagram for demonstrating the inspection method of the electronic device which concerns on an 8th Example.

Explanation of symbols

1-8: Probe unit 10, 510, 610, 710, 810: Substrate, 12, 512, 612, 712, 812: Slit, 14: Through hole (holding unit), 20, 220, 320, 420, 520, 620, 720, 820: probe, 22, 222, 322, 422, 722, 822: movable part, 24, 224, 324, 424, 524, 624, 724, 824: contact part, 26, 226, 326: through hole (Holding unit)
30: Pin (holding unit), 50: Electronic device (specimen), 52: Electrode, 64: Elastic member (biasing unit), 80, 580, 680, 880: Substrate, 83, 585, 685, 786: Slit, 85, 587, 687, 787, 885: sacrificial film

Claims (6)

A substrate on which a plurality of slits are formed using lithography;
The gap is formed inside the sacrificial film formed on the side wall of the slit and formed by removing the sacrificial film between the side wall, and the side walls are moved in the arrangement direction of the slits. A plurality of probes having a limited movable part and a contact part that moves together with the movable part when contacting the electrode of the specimen;
A probe unit comprising: The probe is released from the substrate;
A holding unit for holding the movable part in the slit;
An urging unit for urging the contact portion toward the specimen side,
The probe unit according to claim 1. A portion of the probe is fixed to the substrate;
The contact portion is formed on the remaining portion of the probe.
The probe unit according to claim 1. A plurality of slits are formed on the substrate using lithography,
Forming a sacrificial film covering the side wall of the slit;
A probe is formed by plating inside the sacrificial film,
Removing at least a portion of the sacrificial film;
A method of manufacturing the probe unit. By removing a part of the substrate by etching, a contact portion that contacts an electrode of the specimen of the probe is protruded from the substrate.
The method of manufacturing a probe unit according to claim 4, further comprising: A plurality of slits are formed on the substrate using lithography,
A probe is formed in the slit by plating,
By removing a part of the substrate by etching, a contact portion that comes into contact with the electrode of the specimen of the probe protrudes from the substrate.
A method of manufacturing the probe unit.

Images