JP2007088163A - 半導体チップの製造方法 - Google Patents
半導体チップの製造方法 Download PDFInfo
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- JP2007088163A JP2007088163A JP2005274242A JP2005274242A JP2007088163A JP 2007088163 A JP2007088163 A JP 2007088163A JP 2005274242 A JP2005274242 A JP 2005274242A JP 2005274242 A JP2005274242 A JP 2005274242A JP 2007088163 A JP2007088163 A JP 2007088163A
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- insulating film
- film
- semiconductor chip
- opening
- electrode pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】 金属膜34上に開口部32を覆うよう絶縁膜除去用テープ38を貼り付け、半導体基板11の第2の主面11B側から貫通孔21の側壁を覆うように絶縁膜17を形成し、その後、絶縁膜除去用テープ38を除去する。
【選択図】 図16
Description
11 半導体基板
11A 第1の主面
11B 第2の主面
12,17 絶縁膜
13 電極パッド
13A 上面
14 保護膜
14A,32,36 開口部
16 導電部材
18 貫通ビア
21 貫通孔
23 貫通部
23A 下端部
24A 下面
24 突出部
31,35 レジスト膜
34 金属膜
38 絶縁膜除去用テープ
A 段差部分
D1 深さ
M1〜M6 厚さ
R1〜R5 直径
Claims (3)
- 半導体基板に形成された半導体素子と電気的に接続された電極パッドと、該電極パッドと電気的に接続された貫通ビアとを備えた半導体チップの製造方法であって、
前記電極パッド上に開口部を有したレジスト膜を形成するレジスト膜形成工程と、
前記開口部の形成位置に対応する前記半導体基板及び電極パッドを貫通し、前記開口部よりも直径の小さい貫通孔を形成する貫通孔形成工程と、
前記レジスト膜上に絶縁膜除去用テープを貼り付ける絶縁膜除去用テープ貼付工程と、
前記絶縁膜除去用テープ貼付工程後に、少なくとも前記貫通孔の側壁を覆う絶縁膜を形成する絶縁膜形成工程と、
前記絶縁膜除去用テープを除去する絶縁膜除去用テープ除去工程とを含むことを特徴とする半導体チップの製造方法。 - 前記開口部から突出すると共に、前記開口部よりも幅広形状となる突出部を有する前記貫通ビアを前記貫通孔及び開口部に形成する貫通ビア形成工程と、
前記突出部と電極パッドとに接触する導電部材を形成する導電部材形成工程とをさらに設けたことを特徴とする請求項1記載の半導体チップの製造方法。 - 前記貫通孔形成工程の前に、前記半導体基板を薄板化する基板薄板化工程を設けたことを特徴とする請求項1または2記載の半導体チップの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005274242A JP4536629B2 (ja) | 2005-09-21 | 2005-09-21 | 半導体チップの製造方法 |
KR1020060091081A KR20070033268A (ko) | 2005-09-21 | 2006-09-20 | 반도체 칩의 제조 방법 |
US11/523,576 US7557037B2 (en) | 2005-09-21 | 2006-09-20 | Method of manufacturing semiconductor chip |
TW095134901A TW200717767A (en) | 2005-09-21 | 2006-09-21 | Method of manufacturing semiconductor chip |
EP06019780.3A EP1768177B1 (en) | 2005-09-21 | 2006-09-21 | Method of manufacturing semiconductor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005274242A JP4536629B2 (ja) | 2005-09-21 | 2005-09-21 | 半導体チップの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007088163A true JP2007088163A (ja) | 2007-04-05 |
JP4536629B2 JP4536629B2 (ja) | 2010-09-01 |
Family
ID=37561746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005274242A Active JP4536629B2 (ja) | 2005-09-21 | 2005-09-21 | 半導体チップの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7557037B2 (ja) |
EP (1) | EP1768177B1 (ja) |
JP (1) | JP4536629B2 (ja) |
KR (1) | KR20070033268A (ja) |
TW (1) | TW200717767A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8541820B2 (en) | 2009-06-29 | 2013-09-24 | Kabushiki Kaisha Toshiba | Semiconductor device including through-electrode |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412806B2 (en) | 2014-06-13 | 2016-08-09 | Invensas Corporation | Making multilayer 3D capacitors using arrays of upstanding rods or ridges |
US9397038B1 (en) | 2015-02-27 | 2016-07-19 | Invensas Corporation | Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates |
US9837375B2 (en) | 2016-02-26 | 2017-12-05 | Semtech Corporation | Semiconductor device and method of forming insulating layers around semiconductor die |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207318A (ja) * | 2002-12-24 | 2004-07-22 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、回路基板及び電子機器 |
JP2004327910A (ja) * | 2003-04-28 | 2004-11-18 | Sharp Corp | 半導体装置およびその製造方法 |
JP2005051142A (ja) * | 2003-07-31 | 2005-02-24 | Nec Kansai Ltd | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3726579B2 (ja) | 1999-08-20 | 2005-12-14 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
JP4053257B2 (ja) * | 2001-06-14 | 2008-02-27 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JP4322508B2 (ja) * | 2003-01-15 | 2009-09-02 | 新光電気工業株式会社 | 半導体装置の製造方法 |
US7199050B2 (en) * | 2004-08-24 | 2007-04-03 | Micron Technology, Inc. | Pass through via technology for use during the manufacture of a semiconductor device |
-
2005
- 2005-09-21 JP JP2005274242A patent/JP4536629B2/ja active Active
-
2006
- 2006-09-20 US US11/523,576 patent/US7557037B2/en active Active
- 2006-09-20 KR KR1020060091081A patent/KR20070033268A/ko not_active Application Discontinuation
- 2006-09-21 TW TW095134901A patent/TW200717767A/zh unknown
- 2006-09-21 EP EP06019780.3A patent/EP1768177B1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207318A (ja) * | 2002-12-24 | 2004-07-22 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、回路基板及び電子機器 |
JP2004327910A (ja) * | 2003-04-28 | 2004-11-18 | Sharp Corp | 半導体装置およびその製造方法 |
JP2005051142A (ja) * | 2003-07-31 | 2005-02-24 | Nec Kansai Ltd | 半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8541820B2 (en) | 2009-06-29 | 2013-09-24 | Kabushiki Kaisha Toshiba | Semiconductor device including through-electrode |
Also Published As
Publication number | Publication date |
---|---|
EP1768177A2 (en) | 2007-03-28 |
KR20070033268A (ko) | 2007-03-26 |
US20070065980A1 (en) | 2007-03-22 |
US7557037B2 (en) | 2009-07-07 |
JP4536629B2 (ja) | 2010-09-01 |
EP1768177A3 (en) | 2011-06-22 |
EP1768177B1 (en) | 2017-02-08 |
TW200717767A (en) | 2007-05-01 |
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