JP2007069341A5

JP2007069341A5 -

Info

Publication number: JP2007069341A5
Application number: JP2006215373A
Authority: JP
Filing date: 2006-08-08
Publication date: 2009-09-17
Anticipated expiration: 2026-08-08

Claims

Forming a sacrificial layer on the substrate;
Forming a first layer on the sacrificial layer;
Forming a mask having a first film thickness and a second film thickness smaller than the first film thickness on the first layer;
Using said mask, by etching said first layer to form a structure layer,
Removing the sacrificial layer;
In the structural layer, the thickness of the second portion provided under the second thickness mask is smaller than the thickness of the first portion provided under the first thickness mask. A manufacturing method of a micro electro mechanical device characterized by the above.

The semi-conductor layer is formed on the first region on the insulating substrate, and forming a sacrificial layer on the second region on the insulating substrate,
Forming an insulating layer on the semiconductor layer;
Forming a conductive layer on each of the insulating layer and the sacrificial layer;
Forming a mask having a first film thickness and a second film thickness smaller than the first film thickness on the conductive layer above the semiconductor layer and on the conductive layer above the sacrificial layer ;
Using said mask, by etching the conductive layer, wherein the first region forms a Gate electrode, and forming a structural layer on the second region,
An impurity region is formed in the semiconductor layer by adding an impurity element to the semiconductor layer using the gate electrode as a mask ,
Forming a wiring connected to the impurity region and the structural layer;
Removal of the previous Symbol sacrificial layer,
Before Ki構 concrete layer, a second portion of the thickness which provided the mask under the second film thickness, than the first portion of the thickness which provided the mask under the first thickness the method for manufacturing a micro-electro-mechanical device, characterized in that not thin.

Forming a semiconductor layer in a first region on an insulating substrate and forming a sacrificial layer in a second region on the insulating substrate;
Forming a first insulating layer on the semiconductor layer;
Forming a conductive layer on each of the first insulating layer and the sacrificial layer;
Forming a mask having a first film thickness and a second film thickness smaller than the first film thickness on the conductive layer above the semiconductor layer and on the conductive layer above the sacrificial layer;
Etching the conductive layer using the mask forms a gate electrode in the first region, and forms a structural layer in the second region;
An impurity region is formed in the semiconductor layer by adding an impurity element to the semiconductor layer using the gate electrode as a mask,
Forming a second insulating layer covering the first insulating layer, the gate electrode and the structural layer;
Forming a wiring connected to the impurity region on the second insulating layer;
In the second region, an opening is formed by selectively removing a part of the wiring,
Removing the second insulating layer and the sacrificial layer in the second region by introducing an etchant from the opening;
In the structural layer, the thickness of the second portion provided under the second thickness mask is smaller than the thickness of the first portion provided under the first thickness mask. A manufacturing method of a micro electro mechanical device characterized by the above.

In any one of Claims 1 thru | or 3,
The method of manufacturing a microelectromechanical device, wherein a width of the second portion in the structural layer is smaller than a width of the first portion.

In claim 4,
A method for manufacturing a microelectromechanical device, wherein a boundary between the second portion and the first portion in the structural layer is tapered.