JP2008119818A5 - - Google Patents
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- JP2008119818A5 JP2008119818A5 JP2007131317A JP2007131317A JP2008119818A5 JP 2008119818 A5 JP2008119818 A5 JP 2008119818A5 JP 2007131317 A JP2007131317 A JP 2007131317A JP 2007131317 A JP2007131317 A JP 2007131317A JP 2008119818 A5 JP2008119818 A5 JP 2008119818A5
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- JP
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- Prior art keywords
- movable electrode
- electrode
- forming
- movable
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
Claims (3)
前記半導体基板と隙間を設けて機械的に可動な状態で配置されたシリコンからなる可動電極と、
前記可動電極の周囲に形成され且つ前記固定電極の一部を覆うように形成された配線積層部であって、配線を含む前記配線積層部と、
を有し、
少なくとも前記可動電極の上面および側面がタングステン（Ｗ）またはモリブデン（Ｍｏ）によりシリサイド化されていることを特徴とするＭＥＭＳデバイス。 A fixed electrode made of silicon formed on a semiconductor substrate;
A movable electrode made of silicon disposed in a mechanically movable state with a gap between the semiconductor substrate, and
A wiring laminated portion formed around the movable electrode and so as to cover a part of the fixed electrode, the wiring laminated portion including wiring;
Have
At least the upper surface and the side surface of the movable electrode are silicided with tungsten (W) or molybdenum (Mo) .
前記半導体基板と隙間を設けて機械的に可動な状態で配置されたシリコンからなる可動電極と、
前記可動電極の周囲に形成され且つ前記固定電極の一部を覆うように形成された配線積層部であって、配線を含む前記配線積層部と、
を有するＭＥＭＳデバイスの製造方法であって、
半導体基板上に固定電極を形成する工程と、
一部が犠牲層上に形成された態様で前記可動電極を形成する工程と、
前記固定電極および前記可動電極の上に前記配線積層部を形成する工程と、
前記配線積層部および前記犠牲層の一部をエッチングにより除去して前記可動電極をリリースする工程と、
を有し、
前記可動電極を形成する工程において、前記可動電極の上面および側面をタングステン（Ｗ）またはモリブデン（Ｍｏ）によりシリサイド化する工程を含むことを特徴とするＭＥＭＳデバイスの製造方法。 A fixed electrode made of silicon formed on a semiconductor substrate;
A movable electrode made of silicon disposed in a mechanically movable state with a gap between the semiconductor substrate, and
A wiring laminated portion formed around the movable electrode and so as to cover a part of the fixed electrode, the wiring laminated portion including wiring;
A method of manufacturing a MEMS device having
Forming a fixed electrode on a semiconductor substrate;
Forming the movable electrode in a form in which a part is formed on the sacrificial layer;
Forming the wiring laminate on the fixed electrode and the movable electrode;
Removing the wiring laminate and the sacrificial layer by etching to release the movable electrode; and
Have
The method of manufacturing a MEMS device, wherein the step of forming the movable electrode includes a step of siliciding an upper surface and a side surface of the movable electrode with tungsten (W) or molybdenum (Mo) .
前記固定電極を形成する工程および前記可動電極を形成する工程の少なくともいずれかの工程で、前記可動電極と前記固定電極との少なくともいずれか一方に不純物イオンをイオン打ち込みする工程を含むことを特徴とするＭＥＭＳデバイスの製造方法。 In the manufacturing method of the MEMS device of Claim 2 ,
At least one of the step of forming the fixed electrode and the step of forming the movable electrode includes a step of ion-implanting impurity ions into at least one of the movable electrode and the fixed electrode, A method for manufacturing a MEMS device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007131317A JP2008119818A (en) | 2006-10-20 | 2007-05-17 | Mems device and its manufacturing method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006286035 | 2006-10-20 | ||
| JP2007131317A JP2008119818A (en) | 2006-10-20 | 2007-05-17 | Mems device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008119818A JP2008119818A (en) | 2008-05-29 |
| JP2008119818A5 true JP2008119818A5 (en) | 2010-07-01 |
Family
ID=39505125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007131317A Pending JP2008119818A (en) | 2006-10-20 | 2007-05-17 | Mems device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008119818A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8470628B2 (en) | 2011-06-20 | 2013-06-25 | International Business Machines Corporation | Methods to fabricate silicide micromechanical device |
| JP5784513B2 (en) * | 2012-01-13 | 2015-09-24 | 株式会社東芝 | MEMS device and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778800A (en) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | Fine processing method, accelerometer and manufacture thereof |
| JP3435850B2 (en) * | 1994-10-28 | 2003-08-11 | 株式会社デンソー | Semiconductor dynamic quantity sensor and method of manufacturing the same |
| JP3307200B2 (en) * | 1995-11-01 | 2002-07-24 | 株式会社村田製作所 | Angular velocity sensor |
| JPH1048246A (en) * | 1996-08-08 | 1998-02-20 | Hitachi Ltd | Semiconductor acceleration sensor |
| JPH11211483A (en) * | 1998-01-30 | 1999-08-06 | Aisin Seiki Co Ltd | Surface micromachine and its manufacture |
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2007
- 2007-05-17 JP JP2007131317A patent/JP2008119818A/en active Pending