JP2007043063A - Package for storing solid state imaging device, substrate for mounting the device, and solid state imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging device storing package capable of effectively storing an imaging device and having excellent optical characteristics, and to provide a substrate for mounting the imaging device, and an imaging apparatus. <P>SOLUTION: The package is provided with a base body 7 on which a storage for storing the solid state imaging device 6 is formed and an aperture for leading light to a light receiver of the solid state imaging device 6 is formed on the upper surface, and a translucent substrate 1 stuck to the base body 7 through adhesive so as to close the aperture; a dielectric multilayer film 2 formed by alternately laminating a plurality of dielectric layers 3 of a high refractive index and dielectric substrates 4 of a low refractive index, and forming an outermost low-refractive-index dielectric layer composed of silicon dioxide as an outermost layer 14 is formed on the main surface of the translucent substrate 1 which is joined with the base body 7. The adhesive 10 is directly brought into contact with the outermost low-refractive-index dielectric layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a solid-state image pickup device storage package for mounting a solid-state image pickup device such as a CCD or CMOS image sensor, a solid-state image pickup device mounting substrate, and a solid-state image pickup apparatus using the same.

  In recent years, there has been a rapid progress in the reduction in the size and price of cameras including solid-state imaging devices equipped with solid-state imaging devices such as CCDs and CMOSs. Miniaturization and reduction of parts are progressing.

  Such a solid-state imaging device generally includes a lens made of a glass material or a plastic material for collecting incident light from the outside and guiding it to a solid-state imaging device in order to obtain an image. Constructed by storing an image sensor in a package for storing an image sensor formed by holding an optical member with a dielectric multilayer film formed on the surface of a transparent substrate made of glass by a base made of resin or the like (For example, see Patent Document 1 below).

This optical member is made of a dielectric material having a refractive index of 1.7 or more, such as tantalum pentoxide, titanium oxide, niobium oxide, lanthanum fluoride, and zirconium oxide, on the entire surface of one side of the translucent substrate or in an effective range for image recognition. comprising shielding a high refractive index dielectric layer, the infrared by SiO ₂ or _{MgF 2,} Na 3 AlF ₆ or the like refractive index of a 1.6 or lower refractive index dielectric layer, stacked several tens of layers alternately A dielectric multilayer film is formed.

  In general, a dielectric multilayer film has a specific wavelength by changing the optical film thickness that is an integral multiple of λ / 4 (λ is a design wavelength of arbitrary light) in each layer using the interference effect of light. By controlling the maximum and minimum of the reflection intensity, the function as an optical filter can be exhibited. This is because each time the optical film thickness of each layer of the dielectric multilayer film changes by ¼ wavelength, the phase of light at that wavelength becomes the same or is reversed. That is, by adjusting the optical film thickness of each layer of the dielectric multilayer film, the interface between the high refractive index dielectric layer and the low refractive index dielectric layer constituting the dielectric multilayer film, or the dielectric multilayer film and the translucent substrate It is possible to increase or decrease the reflection intensity by adjusting the phase of the reflected light from the interface and interfering with the reflected light on the surface of the dielectric multilayer film.

  Therefore, by setting the optical film thickness to an odd multiple of λ / 4 for light having a wavelength that is not desired to be transmitted among the incident light, the transmitted light is reduced by increasing the reflection intensity with respect to the incident light. It can have a light blocking effect on the wavelength band. Actually, an optical member having good characteristics is obtained by adjusting the optical film thicknesses of the high refractive index dielectric layer and the low refractive index dielectric layer forming the dielectric multilayer film in more detail. The optical film thickness is represented by the product (n × d) of the refractive index n and the actual physical film thickness d.

  Such a translucent substrate is bonded to the substrate using a UV curable epoxy adhesive or a thermosetting epoxy adhesive. In the case of using a UV curable epoxy adhesive, after the UV curable epoxy adhesive is applied to the joining portion, ultraviolet light is irradiated to promote the curing reaction of the adhesive, thereby joining the translucent substrate and the substrate. Then, heating is performed to sufficiently advance the curing reaction of the adhesive so that it is completely adhered. Moreover, when using a thermosetting epoxy adhesive, it heats in the state which apply | coated the thermosetting epoxy adhesive beforehand to the joint surface of the translucent board | substrate, and was superposed on the base | substrate. By re-melting the thermosetting epoxy adhesive in the temporarily cured state, the translucent substrate and the substrate are joined, and further heating is performed to sufficiently advance the curing reaction of the thermosetting adhesive. Adhere.

  As another form of the conventional solid-state imaging device, a wiring conductor is formed on the outer peripheral portion of the translucent substrate having a dielectric multilayer film deposited on the surface thereof, that is, a portion other than the imaging region, and an imaging element is formed on the wiring conductor. Is proposed in which the light receiving portion of the image sensor is flip-chip mounted so as to face the imaging region of the translucent substrate, and then the outer peripheral edge of the image sensor and the translucent substrate are joined by an adhesive. (See Patent Document 2 below).

As the adhesive in this case, a UV curable epoxy adhesive or a thermosetting epoxy adhesive is used.
JP 2001-245186 A Japanese Patent No. 3307319

  However, there has been a problem that good bonding strength cannot be obtained in the bonding between the base and the light-transmitting substrate or in the bonding between the imaging element and the light-transmitting substrate. As a result, there has been a problem that the image pickup device cannot be satisfactorily accommodated and it is difficult to operate the image pickup device normally.

  In addition, when the base body and the translucent substrate are bonded, or when the imaging element flip-chip mounted on the translucent substrate and the translucent substrate are bonded, the adhesive was deposited on the translucent substrate. There is also a problem that the dielectric multilayer film wets and spreads, reaches the imaging region of the translucent member beyond the predetermined junction region, and good optical characteristics cannot be obtained.

  Therefore, the present invention has been completed in view of the above problems, and an object of the present invention is to provide an image pickup device storage package, an image pickup device mounting substrate, and an image pickup device mounting substrate that can well store an image pickup device and have excellent optical characteristics. An imaging device is provided.

  The solid-state image pickup device storage package of the present invention has a storage portion for storing the solid-state image pickup device and a base on which an opening for introducing light into the light receiving portion of the solid-state image pickup device is formed on the upper surface. And a translucent substrate that is attached to the base via an adhesive so as to close the opening, and is a main body that is bonded to the base of the translucent substrate. On the surface, a dielectric multilayer film is formed by alternately laminating a plurality of high-refractive index dielectric layers and low-refractive index dielectric layers, with the outermost layer being the outermost low-refractive index dielectric layer made of silicon oxide. The adhesive is in direct contact with the outermost low refractive index dielectric layer.

  In the solid-state image pickup device storage package of the present invention, preferably, the outermost low refractive index dielectric layer has a surface roughness Ra of 0.5 to 3.0 nm.

  In the solid-state image pickup device storage package of the present invention, preferably, the surface roughness Ra of the light-transmitting substrate is 0.20 nm or less.

  In the solid-state image pickup device storage package according to the present invention, preferably, the dielectric multilayer film is formed by depositing the high refractive index dielectric layer or the low refractive index dielectric layer as a single layer, and then has only a cation on the surface. Is irradiated for a predetermined time.

  In the substrate for mounting a solid-state imaging device of the present invention, a wiring conductor is formed on the outer peripheral portion of the main surface of the translucent substrate, and the solid-state imaging device is electrically connected to the wiring conductor and the outside of the solid-state imaging device. In a solid-state imaging device mounting substrate for bonding a peripheral portion to the translucent substrate with an adhesive, a plurality of high refractive index dielectric layers and low refractive index dielectric layers are alternately stacked on the main surface. And forming a dielectric multilayer film having an outermost low refractive index dielectric layer made of silicon oxide as the outermost layer, and directly contacting the adhesive with the outermost low refractive index dielectric layer. .

  In the solid-state imaging element mounting substrate of the present invention, preferably, the outermost low refractive index dielectric layer has a surface roughness Ra of 0.5 to 3.0 nm.

  In the solid-state imaging device mounting substrate of the present invention, preferably, the surface roughness Ra of the translucent substrate is set to 0.20 nm or less.

  In the solid-state imaging device mounting substrate of the present invention, it is preferable that the dielectric multilayer film is formed by depositing the high refractive index dielectric layer or the low refractive index dielectric layer as a single layer, and then has only a cation on the surface. Is irradiated for a predetermined time.

  In the solid-state imaging device of the present invention, the solid-state imaging device is housed in the housing portion of the solid-state imaging device housing package of the present invention, and light transmitted through the dielectric multilayer film and the translucent substrate is transmitted to the solid-state imaging device. It is combined with.

  The solid-state imaging device of the present invention is configured to electrically connect a solid-state imaging device to the wiring conductor of the solid-state imaging device mounting substrate of the present invention and to use the translucent substrate with an outer peripheral edge of the solid-state imaging device with an adhesive. The light transmitted through the dielectric multilayer film and the translucent substrate is coupled to the solid-state imaging device.

  The package for housing a solid-state imaging device of the present invention is formed by alternately laminating a plurality of high-refractive index dielectric layers and low-refractive index dielectric layers on a main surface bonded to a base of a translucent substrate. Forming a dielectric multilayer film with an outer layer made of silicon oxide as an outermost low refractive index dielectric layer, and contacting the adhesive directly with the outermost low refractive index dielectric layer, the adhesive and the dielectric multilayer By performing hydrogen bonding via a hydroxyl group at the junction of the outermost layer surface of the film, it is possible to obtain good adhesive strength and to protect the dielectric multilayer film with silicon oxide that is stable against the external environment. To obtain good bonding strength against heat applied when a translucent substrate is bonded to a substrate via an adhesive or thermal stress generated during operation of a solid-state imaging device in a use environment With excellent optical characteristics and long-term reliability It can be a solid-state imaging device housing package.

  In the substrate for mounting a solid-state imaging device of the present invention, a wiring conductor is formed on the outer peripheral portion of the main surface of the translucent substrate, and the solid-state imaging device is electrically connected to the wiring conductor and the outer peripheral edge of the solid-state imaging device. In the substrate for mounting a solid-state imaging device for bonding the substrate to the translucent substrate with an adhesive, the outermost layer is formed by alternately laminating a plurality of high refractive index dielectric layers and low refractive index dielectric layers on the main surface. Was formed as an outermost low refractive index dielectric layer made of silicon oxide, and an adhesive was brought into direct contact with the outermost low refractive index dielectric layer. By performing hydrogen bonding via the hydroxyl group at the outermost layer surface bonding, good bonding strength can be obtained at the outermost layer surface bonding of the adhesive and the dielectric multilayer film, and the translucent substrate and the solid-state imaging Good bonding strength is obtained in bonding with elements. Bets can be, excellent in optical properties can be a good solid-state image pickup device mounting board in long-term reliability.

  In addition, since the substrate and bonding wires can be omitted, the product can be made smaller and thinner, and the electrodes of the solid-state image sensor are flip-chip mounted on the optical member on which the wiring conductor is formed via an adhesive. It is possible to obtain a good bonding strength against the stress applied to the optical member due to temperature change and external force when connecting by the method, and to provide a solid-state imaging device mounting substrate with excellent optical characteristics and long-term reliability be able to.

  In the solid-state image pickup device storage package and the solid-state image pickup device mounting substrate of the present invention, the outermost low refractive index dielectric layer has a surface roughness Ra of 0.5 to 3.0 nm. The water repellency of the outer layer surface is 10 to 30 degrees in contact angle measurement, and the adhesive is transparent when joining the base and the translucent substrate or joining the solid-state imaging device and the translucent substrate. The dielectric multilayer film deposited on the transparent substrate wets and spreads over the predetermined junction region and effectively reaches the imaging region of the translucent member, and between the base and the translucent substrate. The bonding strength between the bonding and the solid-state imaging device and the translucent substrate can be made extremely good.

  In the solid-state imaging device of the present invention, the solid-state imaging device is housed in the housing portion of the solid-state imaging device housing package of the present invention, and light transmitted through the dielectric multilayer film and the translucent substrate is coupled to the solid-state imaging device. Therefore, it has good bonding strength against heat applied when the translucent substrate is bonded to the base via an adhesive and thermal stress generated during operation of the solid-state imaging device under the usage environment. It is possible to obtain a solid-state imaging device having excellent optical characteristics and long-term reliability.

  The solid-state imaging device of the present invention is configured to electrically connect the solid-state imaging device to the wiring conductor of the solid-state imaging device mounting substrate of the present invention and to bond the outer peripheral edge of the solid-state imaging device to the translucent substrate with an adhesive. Since the light transmitted through the dielectric multilayer film and the light-transmitting substrate is coupled to the solid-state imaging device, the substrate and the bonding wire can be omitted, so that the product can be made smaller and thinner, and the wiring Obtaining good bonding strength against stress applied to the optical member due to temperature changes and external force when connecting the electrode of the solid-state imaging device to the optical member on which the conductor is formed by the flip chip mounting method via an adhesive In addition to being excellent in optical characteristics, it is possible to provide a solid-state imaging device having excellent long-term reliability.

  A solid-state imaging device of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a cross-sectional view showing an example of an embodiment of a solid-state imaging device of the present invention. The optical member 5 is configured by depositing and forming the dielectric multilayer film 2 on the translucent substrate 1.

  The translucent substrate 1 is made of a glass material made of borosilicate glass, a birefringent material such as lithium niobate, crystal, or sapphire, or a polymer material such as acrylic resin.

  Borosilicate glass becomes a material with excellent heat resistance and chemical resistance by adding boric acid to the glass raw material, and it has a transparent, flat and nonporous surface, so it is suitably used as a material with few optical defects. It is done. Such a borosilicate glass can be made into the translucent board | substrate 1 with few board | plate thickness variations by non-polishing by the downdraw method using the molten high purity glass raw material.

  Alternatively, the molten high-purity glass raw material is poured into a container made of a metal having a melting point higher than the melting temperature of the glass, preferably into a container made of, for example, platinum (Pt) that can effectively prevent the intrusion of impurities. Thereafter, it is gradually cooled over several days to form a block shape. After that, it is cut into a predetermined plate thickness and outer dimensions, and each ridge portion is mechanically cut to perform C-face machining, or after R-face machining by barrel machining or chemical etching, alumina The light-transmitting substrate 1 can be obtained by performing lapping using an abrasive made of, and the like, and optically polishing using an abrasive made of alumina, cerium oxide, or the like. By creating in this way, it is possible to prevent the impurities that generate α-rays that adversely affect the solid-state imaging device 6 from being dissolved in the high-purity glass raw material.

  In addition, lithium niobate, quartz, and sapphire are obtained by artificially growing a seed crystal in a growth furnace at high pressure and high temperature to obtain a block made of a single crystal, and then the cut surface has a predetermined angle with respect to the crystal axis. Then, the wafer is cut out using a wire saw or a band saw. The wafer is cut into a predetermined plate thickness and outer dimensions, and after c-plane processing is performed by mechanically cutting each ridge line portion, lapping is performed using an abrasive made of alumina or the like. The light-transmitting substrate 1 can be obtained by optical polishing using an abrasive made of alumina, cerium oxide or the like.

  In the translucent substrate 1 made of lithium niobate, quartz, sapphire and the like thus created, when light is incident on the translucent substrate 1, two refracted lights appear and two of the same intensity are emitted. The light travels by being divided into rays, and is output as linearly polarized light having vibration planes perpendicular to each other. This phenomenon is called birefringence, and there are two refractive indexes in the material that depend on the direction of polarization, and one of the two rays at each refractive index is called an ordinary ray according to the usual refraction law. The other light ray is called an extraordinary ray because it does not follow the law of refraction because the speed of light traveling through the material changes depending on the direction. Since lithium niobate, quartz, and sapphire separate incident light into ordinary light and extraordinary light, one incident light is converted into ordinary light and extraordinary light according to the pixel arrangement and pixel pitch of the solid-state imaging device 6. When separated and copied, such as lattice fringes, it has a function of removing pseudo signals that do not exist originally, such as color unevenness and stripe patterns generated in the solid-state imaging device 6.

  Further, by using a plurality of birefringent materials such as lithium niobate, quartz, and sapphire in a stacked manner, four adjacent pixels of square or rectangular shape corresponding to the pixel arrangement and pixel pitch of the solid-state image sensor 6 are used. , The pseudo signal of the solid-state imaging device 6 can be removed more satisfactorily.

  Thus, although the translucent board | substrate 1 can be produced by various methods, the surface state Ra of the translucent board | substrate 1 which performed optical grinding | polishing uses atomic force microscope 0 Desirably 20 nm or less. When the surface roughness Ra of the translucent substrate 1 is larger than 0.20 nm, the surface roughness of the surface of the dielectric multilayer film tends to increase, and the surface roughness of the outermost low refractive index dielectric layer is reduced to 0.5. There is a tendency that it is difficult to set to ~ 3.0 nm.

  In addition, the surface of the light-transmitting substrate 1 is chemically polished and washed with a 10% to 30% aqueous sodium hydroxide solution immediately before the dielectric multilayer film 2 is deposited. It is desirable to activate the surface of the translucent substrate 1 by plasma cleaning in which the surface of the substrate 1 is irradiated with plasma. By performing these cleaning operations, it is possible to improve the adhesion between the surface of the translucent substrate 1 and the dielectric layer, the optical transparency, and the reflectivity.

  Further, the shape of the translucent substrate 1 in plan view may be a quadrangular shape such as a square or a rectangle, a substantially quadrangular shape with four corners chamfered, a polygonal shape, a substantially circular shape such as a circle or an ellipse.

  FIG. 2 shows an enlarged view of the dielectric multilayer film 2. The dielectric multilayer film 2 includes a high refractive index dielectric layer 3 usually made of a dielectric material having a refractive index of 1.7 or more, and a low refractive index usually made of a dielectric material having a refractive index of 1.6 or less. The dielectric layer 4 is formed by sequentially laminating a plurality of layers over several tens of layers under specific conditions using a vapor deposition method, a sputtering method, or the like.

  The dielectric multilayer film 2 produced in this way generally has a maximum reflectance in a wavelength range of 400 nm to 600 nm, which is a function necessary as an optical filter that shields incident waves having wavelengths in the near infrared range. It has a function of 20% or less and a minimum reflectance of 90% or more in a wavelength range of 700 nm to 1000 nm.

  Further, a reflection having a maximum reflectance of 2% or less on a principal surface opposite to the principal surface on which the dielectric multilayer film 2 having the function of an optical filter is deposited is at least in a wavelength region of 450 nm to 600 nm. A prevention film may be formed. As a result, the loss of desired incident light can be reduced, and a better image signal can be obtained.

  As such an insulating material having a refractive index of 1.7 or more, for example, tantalum pentoxide, titanium oxide, niobium pentoxide, lanthanum oxide, zirconium oxide or the like is used, and as an insulating material having a refractive index of 1.6 or less, Examples include silicon oxide, aluminum oxide, lanthanum fluoride, and magnesium fluoride. Due to the mechanical properties such as hardness and stability, and the optical properties such as refractive index necessary for imparting a function as a desired optical filter, titanium oxide is used as the high refractive index dielectric layer 3 and low refractive index is used. The dielectric constant layer 4 is preferably silicon oxide.

  As a method for depositing and forming the high refractive index dielectric layer 3 and the low refractive index dielectric layer 4, an ion beam assist method is used. The ion beam assist method is a vacuum deposition method in which cation irradiation is used in combination with a vacuum deposition method which is a film forming process. As the cation used in the ion beam assist method, for example, a cation generated from plasma obtained by introducing both an inert gas composed of argon and an active gas composed of oxygen gas into an ion source of the apparatus is used.

In the ion beam assist method, for example, the translucent substrate 1 is placed in a crucible installed in a vacuum deposition apparatus, and oxygen is sufficiently added so as not to cause oxygen deficiency in order to obtain an optically good dielectric multilayer film 2. supplied, and vacuum deposition is performed while a combination of irradiation of a cation in a state of being set in the vacuum deposition device to 1 × 10 ^-3 Pa degree of vacuum of about. The surface temperature of the translucent substrate 1 when the dielectric multilayer film 2 is deposited and formed in the vacuum deposition apparatus is managed by measuring the temperature in the vicinity of the translucent substrate 1 with a thermocouple. The temperature is maintained at about 30 to 350 ° C. using a heater or the like. Thereafter, the high refractive index dielectric layer 3 and the low refractive index dielectric layer 4 are placed on the entire principal surface of the translucent substrate 1 or in a desired region facing the solid-state imaging device 6 by masking. The translucent member 5 is formed by depositing a total of about 10 to 100 dielectric layers alternately while using irradiation together. When the vapor deposition material in which cations fly in the vacuum collides with the gas molecules, the gas molecules of the vapor deposition material are excited to obtain a large kinetic energy. And when the gas molecule of the vapor deposition material which obtained this big kinetic energy reaches | attains the surface of the transparent substrate 1 which is a to-be-adhered material, while moving the wide area | region of the to-be-adhered material surface, with the movement of a wide area | region. This greatly increases the probability of finding a lower energy state on the surface of the adherend, so that the deposition material molecules are uniformly deposited on the surface of the adherend without agglomerating with each other, and vapor deposition exists in the vicinity. A film can be formed without agglomerating atoms to form nuclei.

  In addition, in the present invention, it is preferable to irradiate the surface only with a cation for a predetermined time after the high refractive index dielectric layer 3 or the low refractive index dielectric layer 4 is deposited and formed. As a result, when a cation collides with a molecule of the vapor deposition material that has lost energy on the surface of the adherend, the molecule of the vapor deposition material is pushed into the thin film, and a denser amorphous thin film can be obtained. Since the surface of each deposited layer becomes flat when the cations are struck, the interface between the layers can be made flatter.

  Here, from the viewpoint of improving the wetting and spreading of the adhesive 10 in the bonding between the adhesive 10 and the outermost layer surface 14 of the dielectric multilayer film 2, the outermost layer surface of the dielectric multilayer film uses an atomic force microscope. It is more preferable that the measured surface roughness Ra is 0.5 to 3.0 nm.

  In general, when the dielectric layer is made amorphous by the ion beam assist method, cation is radiated at the same time as the deposition material is deposited, but the high refractive index dielectric layer 3 and the low refractive index are applied. If all the layers of the dielectric constant layer 4 are deposited and then the surface is irradiated with only cations, the cations will be reduced even though the surface roughness Ra is as low as 0.5 to 3.0 nm. Because the oxygen irradiation time, which is the main component in the cation, is excessively implanted into the dielectric layer, the ratio of oxygen in the dielectric layer increases, making it difficult to obtain a normal dielectric layer. It is. On the other hand, in the present invention, the surface of the dielectric layer can be flattened without increasing the oxygen ratio by irradiating the cation for each deposition of the dielectric layer.

  Accordingly, the outermost layer surface 14 of the dielectric multilayer film 2 counted from the translucent substrate 1 is terminated by the low refractive index dielectric layer 4 made of silicon oxide, so that the outermost layer surface of the dielectric multilayer film 2 is terminated. The surface roughness Ra using the 14 atomic force microscope can be as low as 0.5 to 3.0 nm. As a result, the water repellency of the outermost layer surface 14 of the dielectric multilayer film 2 becomes about 10 to 30 degrees in contact angle measurement, and good adhesion is achieved in the bonding between the adhesive 10 and the outermost layer surface 14 of the dielectric multilayer film 2. Strength can be obtained.

  The water wettability of a surface of a substance is due to the inherent properties of the substance and the roughness of the surface. In general, in the case of water repellency such that the contact angle measurement shows 90 degrees or less, the water repellency increases as the surface irregularities increase. Therefore, desired water wetting can be obtained by setting the surface roughness to a predetermined state.

  Here, the term “amorphous” refers to a solid state that has a short-range order but no long-range order, whereas the arrangement of constituent atoms has a periodic structure and is regular like a crystal. It is. In other words, since the bonding is random and the structure is geometrically uniform, it is characterized by being homogeneous and free of grain boundaries. The amorphous state can be observed as a broad peak in the X-ray diffraction method. Moreover, it can observe using transmission electron microscope observation. Transmission electron microscope observation has an electron lens that refracts an electron beam by an electric field or a magnetic field. Since the electron beam has a shorter wavelength than visible light or X-ray, high magnification and resolution can be obtained. The structure can be observed, and the presence or absence of crystal grain boundaries can be visually confirmed. Furthermore, structural analysis can be performed from the electron diffraction pattern, and the amorphous state can be confirmed from the halo pattern.

  In normal vacuum deposition, the energy that is possessed when deposited on the substrate surface is a relatively small amount of energy that uses thermal energy as the source, so the substrate surface cannot be sufficiently diffused. Vapor deposition atoms present in the periphery aggregate to form nuclei, and further, the deposited atoms are bonded to the nuclei to form a film. For this reason, a film is formed through a process in which peripheral nuclei are bonded to each other to form a continuous film as the nuclei grow. As a result, a porous film called a columnar structure is formed, the flatness of the film interface is impaired, and a porous surface is also formed on the surface of the final dielectric multilayer film 2, so that the surface is It will be rough. Thereby, in the joining of the adhesive 10 and the outermost layer surface 14 of the dielectric multilayer film 2, the adhesive 10 wets and spreads on the outermost layer surface 14, and exceeds the predetermined joining region into the imaging region of the translucent member 1. Therefore, it is difficult to obtain good optical characteristics.

  In addition, when magnesium fluoride is used as the low refractive index dielectric layer 4 forming the outermost layer surface 14, the water wettability of the outermost layer surface 14 of the dielectric multilayer film 2 exceeds 30 degrees in contact angle measurement. Therefore, when the adhesive 10 and the outermost layer surface 14 of the dielectric multilayer film 2 are joined, the adhesive 10 is not sufficiently applied to the joining region of the outermost layer surface 14 to spread, and good adhesion cannot be obtained.

  The substrate 7 is made of an inorganic insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a silicon carbide sintered body, or an epoxy resin, a phenol resin, It is composed of organic insulating materials such as liquid crystal polymer, polyphenylene sulfide, and polyimide resin. For example, when it is composed of an aluminum oxide sintered body, it is suitable for raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. An organic binder, a solvent, a plasticizer, and a dispersant are added and mixed to make a slurry, and this slurry is formed into a sheet by a sheet forming method such as a doctor blade method or a calender roll method, which is conventionally known. Sheet), and then appropriate punching is performed on the ceramic green sheets. Both laminating a plurality, it is manufactured by firing at a high temperature of about 1600 ° C.. Alternatively, in the case of an epoxy resin, it is generally formed by molding and curing a resin compound filled with silica powder into a mold shape heated to about 180 ° C. by an injection molding machine.

  In addition, a concave portion that is a storage portion for storing the solid-state imaging element 6 is formed on the upper surface of the base body 7. In addition, a plurality of wiring conductors 8 led out from the bottom surface or inner side surface of the concave portion to the lower surface of the base body 7 are deposited, and the electrodes 12 of the solid-state imaging device 6 are bonded to the wiring conductors 8 formed in the concave portion. It is electrically connected through the wire 9. Further, a portion (not shown) of the wiring conductor 8 led out to the lower surface of the base body 7 is electrically connected to an external electric circuit (not shown) through an electric connection means such as solder.

  The wiring conductor 8 functions as a conductive path that electrically connects each electrode 12 of the solid-state imaging device 6 to an external electric circuit. For example, when the substrate 7 is made of an inorganic insulating material, a refractory metal such as tungsten, molybdenum, or manganese. A metal paste obtained by adding and mixing an appropriate organic solvent, a solvent, a plasticizer, and the like to the powder is preliminarily printed and applied to a ceramic green sheet as a base by a thick film technique such as a screen printing method. By baking at the same time, a predetermined pattern is deposited.

  In addition, the wiring conductor 8 has a surface of excellent conductivity and corrosion resistance such as nickel and gold, and a metal having good wettability with the brazing material is applied to a thickness of 1 to 20 μm by electrolytic plating or electroless plating. It is good to leave it. Thereby, the oxidative corrosion of the wiring conductor 8 can be effectively prevented, and the connection between the wiring conductor 8 and the bonding wire 9 and the connection between the wiring conductor 8 and the wiring conductor 8 of the external electric circuit board are made stronger. Can do. The substrate 7 can be manufactured as described above.

  Then, the solid-state imaging device 6 is bonded to the concave portion of the base 7 with a conventionally known die bond resin or the like, and the electrode 12 and the wiring conductor 8 are electrically connected by the bonding wire 9.

  The base 7 and the optical member 5 are generally joined via an adhesive 10 made of an ultraviolet curable epoxy resin or a thermosetting epoxy resin. For example, when a thermosetting epoxy resin is used as the adhesive 10, the adhesive 10 is applied to the surface on which the dielectric multilayer film 2 of the optical member 5 is formed by a conventionally known screen printing method or the like, and is superposed on the substrate 7. The solid-state imaging device is obtained by pressurizing and heating at a temperature of 90 to 250 ° C. for 60 to 90 minutes.

  In addition, from the viewpoint of reducing stress between members when the base body 7 and the optical member 5 are bonded, heating at a low temperature of about 90 to 110 ° C. is preferable. The adhesive 10 is used not only when the base body 7 and the optical member 5 are bonded, but also by heat caused by reflow or the like when the individual imaging device is mounted on an external wiring board (not shown), or solid. A material that relieves stress between members caused by heat generated when the image sensor 6 operates and effectively prevents the optical member 5 from being destroyed is selected. Examples of the adhesive 10 include bisphenol A type epoxy resin, bisphenol A modified epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, special novolac type epoxy resin, and phenol derivative epoxy. It is made of epoxy resin such as resin, biphenol skeleton type epoxy resin, etc. with addition of curing agent such as imidazole, amine, phosphorus, hydrazine, imidazole adduct, amine adduct, cationic polymerization, dicyandiamide. Yes. Two or more types of epoxy resins may be mixed and used. The organic material powder contained in the adhesive 10 includes silicon rubber, silicon resin, LDPE, HDPE, PMMA, crosslinked PMMA, polystyrene, crosslinked, which has a lower elastic modulus than a thermosetting resin mainly composed of epoxy resin. It is preferable to use a soft resin such as polystyrene, ethylene-acrylic copolymer, polyethyl methacrylate, butyl acrylate, or urethane.

  FIG. 3 is a sectional view showing another example of the embodiment of the solid-state imaging device of the present invention. The optical member 5 is produced in the same manner as in the example of FIG. A solid-state imaging device as shown in FIG. 3 has a substrate 7 ′ having a mounting portion for mounting the solid-state imaging device 6 on the upper surface, a solid-state imaging device 6 mounted on the mounting portion, and an outer peripheral portion on the upper surface of the substrate 7 ′. On the upper surface of the solid-state imaging device 6, the housing 18 is joined, the imaging lens 17 is attached to the top of the housing 18 via the lens barrel 16, and is disposed below the imaging lens 17 inside the housing 18. The optical member 5 is bonded so that the outermost surface 14 of the dielectric multilayer film 2 is in contact with the adhesive 10 on the inner surface of the casing 18 through the adhesive 10 so that the opening of the casing 18 is closed. Yes.

  In the example of FIG. 3, the substrate 7 ′ and the casing 18 form the base body 7 of the present invention, and the substrate 7 ′ and the casing 18 form a storage portion for storing the solid-state imaging device 6. is doing.

  A plurality of wiring conductors 8 led out from the upper surface to the lower surface and side surfaces of the substrate 7 ′ are formed on the substrate 7 ′. The wiring conductors 8 formed on the upper surface are attached to the solid-state imaging device 6. The electrode 12 is electrically connected via the bonding wire 9. Further, a portion (not shown) of the wiring conductor 8 led to the lower surface of the substrate 7 ′ is electrically connected to an external electric circuit (not shown) through an electric connection means such as solder.

  The casing 18 is generally manufactured by molding and curing a resin compound in which silica powder is filled in an epoxy resin into an arbitrary mold shape with heat of about 180 ° C. by an injection molding machine. The adhesive 10 that joins the casing 18 and the optical member 5 is made of an ultraviolet curable epoxy resin or a thermosetting epoxy resin. In such joining of the housing 18 and the optical member 5, the adhesive 10 is applied to the joint portion of the optical member 5 or the joint portion of the housing 18, and then the optical member 5 is superimposed on the housing 18. Thereafter, when a thermosetting epoxy resin is used, it is cured by heating at a temperature of about 80 to 150 ° C. for 60 to 90 minutes. In the case of using an ultraviolet curable epoxy resin, the adhesive 10 is completely cured by heating after being fixed by applying ultraviolet rays.

  The imaging lens 17 is attached to the upper part of the housing 18 via the lens barrel 16, and is arranged so that the focal point of the imaging lens 17 matches the surface of the light receiving surface of the solid-state imaging device 6. Alternatively, the imaging lens 17 is fixed to the lens barrel 16, and the lens barrel 16 is fixed to the housing 18 after the position is adjusted so that the focus of the imaging lens 17 matches the surface of the light receiving surface of the solid-state imaging device 6. May be.

  FIG. 4 is a cross-sectional view showing an example of an embodiment in another invention of the solid-state imaging device of the present invention. The dielectric multilayer film 2 is formed on the translucent substrate 1 in the same manner as in the example of FIG.

  The wiring conductor 8 is made of at least one kind of metal such as aluminum, chromium, nickel, silver, gold, and titanium, and is deposited on the translucent substrate 1 by vacuum deposition, sputtering, or plating, Wiring conductors 8 are formed by removing unnecessary portions by photolithography and etching. The light transmitting substrate 1 and the wiring conductor constitute a wiring substrate 13.

  Alternatively, a mask pattern obtained by performing a punching process corresponding to the pattern of the wiring conductor 8 on a metal plate made of stainless steel (SUS) or aluminum (Al) is placed on the surface of the translucent substrate 1, and vacuum deposition is performed thereon. A pattern of the wiring conductor 8 is formed by depositing a metal in the opening of the mask pattern by a method or a sputtering method.

  Alternatively, the wiring conductor 8 uses a thick film technique such as a screen printing method using a metal paste obtained by adding and mixing an appropriate organic solvent, solvent, plasticizer or the like to a high melting point metal powder such as tungsten, molybdenum, or manganese. Then, printing is applied to the translucent substrate 1 through a mask pattern, and this is baked to be deposited.

  In particular, the method using the mask pattern does not etch the substrate surface of the translucent substrate 1 other than the wiring conductor 8, so that the surface is not chemically eroded by the etchant and prevents deterioration from the optical mirror surface. This is preferable. The wiring conductor 8 is connected to each electrode 12 of the solid-state imaging device 6 via the gold bumps 15 and the like, and serves as a conductive path when the electrical signal of the solid-state imaging device 6 is electrically connected to an external electric circuit.

  In addition, it is preferable to avoid the formation of the wiring conductor 8 on the dielectric multilayer film 2 of the translucent substrate 1. Accordingly, the main portion of the translucent substrate 1 to which the dielectric multilayer film 2 is not attached is preferably avoided. It is preferable to form the dielectric multilayer film 2 on the surface, avoid the deposition region of the dielectric multilayer film 2, or form the dielectric multilayer film 2 in a portion where the wiring conductor 8 is not formed in advance. When the wiring conductor 8 is formed on the dielectric multilayer film 2, a difference in thermal stress or internal stress due to a difference in thermal expansion coefficient between the dielectric multilayer film 2 and the wiring conductor 8 occurs around the wiring conductor 8, Cracks are likely to occur in the dielectric multilayer film 2 when heat is applied when the conductor 8 is formed by vapor deposition or the heat of the solid-state imaging device 6 is applied.

  The solid-state imaging device 6 and the wiring board 13 are mechanically joined by an adhesive 10 made of an ultraviolet curable resin or the like while the electrodes 12 and the wiring conductor 8 are electrically joined by the gold bumps 15. Alternatively, the solid-state imaging device 6 and the wiring board 13 may be electrically and mechanically joined using an adhesive 10 having anisotropic conductivity in which conductive particles are dispersed in an epoxy resin.

  Examples of the solid-state image pickup device storage package of the present invention will be described below.

  In this embodiment, the optical member 5 is prepared under each condition of sample numbers 1 to 9, and the solid member for housing a solid-state imaging device having the shape shown in FIG. Judgment was made based on the appearance results.

  The translucent board | substrate 1 was created using the borosilicate glass whose plate | board thickness is 0.5 mm and whose external dimensions are 90 mm square.

  First, all borosilicate glasses are optically polished, the surface state Ra is 0.15 and 0.10 nm using an atomic force microscope, and a 10% to 30% aqueous sodium hydroxide solution is used. By cleaning, the surface was chemically polished, and the surface was activated by plasma cleaning with plasma irradiation.

  Next, the dielectric multilayer film 2 is formed on the borosilicate glass under each condition from sample numbers 1 to 8.

  (Sample No. 1) A high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide are formed on a borosilicate glass having a surface roughness Ra of 0.05 nm by using a general vacuum deposition method. A sample having a surface roughness Ra of 0.3 nm was prepared by alternately depositing four layers and depositing a dielectric multilayer film 2 consisting of five layers, the outermost layer being magnesium fluoride.

  (Sample No. 2) A high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide are alternately formed on a borosilicate glass having a surface roughness Ra of 0.05 nm by using an ion beam assist method. A sample having a surface roughness Ra of 0.3 nm was prepared by laminating four layers and depositing a five-layer dielectric multilayer film 2 with silicon oxide as the outermost layer.

  (Sample No. 3) A high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide were added on a borosilicate glass having a surface roughness Ra of 0.05 nm using an ion beam assist method. The surface roughness Ra is formed by depositing the dielectric multi-layer film 2 composed of 41 layers of silicon oxide as the outermost layer by alternately irradiating only cations for 2 seconds each time the dielectric layer is deposited. A sample having a thickness of 0.5 nm was prepared.

  (Sample No. 4) On a borosilicate glass having a surface roughness Ra of 0.15 nm, a high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide were added using an ion beam assist method. For each layer of dielectric layer deposited, the surface roughness Ra is formed by depositing alternately the cations alone for 5 seconds each, and depositing the dielectric multilayer film 2 consisting of five layers with the outermost layer being silicon oxide. A sample having a thickness of 0.5 nm was prepared.

  (Sample No. 5) On a borosilicate glass having a surface roughness Ra of 0.15 nm, a high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide were added using an ion beam assist method. Each surface of the dielectric layer is deposited by alternately irradiating only cations for 2 seconds each time, and the surface roughness Ra is formed by depositing the dielectric multilayer film 2 consisting of five layers with the outermost layer being silicon oxide. A sample having a thickness of 1.0 nm was produced.

  (Sample No. 6) On a borosilicate glass having a surface roughness Ra of 0.15 nm, a high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide were added using an ion beam assist method. For each layer of dielectric layer deposited, the surface roughness Ra was formed by depositing alternately the cations alone for 5 seconds each, and depositing the dielectric multilayer film 2 composed of 41 layers of silicon oxide as the outermost layer. A sample having a thickness of 2.0 nm was produced.

  (Sample No. 7) On a borosilicate glass having a surface roughness Ra of 0.15 nm, a high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide were added using an ion beam assist method. The surface roughness Ra is formed by depositing the dielectric multi-layer film 2 composed of 41 layers of silicon oxide as the outermost layer by alternately irradiating only cations for 2 seconds each time the dielectric layer is deposited. A sample having a thickness of 3.0 nm was produced.

  (Sample No. 8) A high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide are formed on a borosilicate glass having a surface roughness Ra of 0.15 nm by using an ion beam assist method. A sample having a surface roughness Ra of 3.5 nm was prepared by depositing and forming a dielectric multilayer film 2 comprising 41 layers of silicon oxide.

  (Sample No. 9) A high refractive index layer 3 made of titanium oxide and a low refractive index layer 4 made of silicon oxide are formed on a borosilicate glass having a surface roughness Ra of 0.15 nm by using a general vacuum deposition method. A sample having a surface roughness Ra of 4.0 nm was prepared by alternately laminating and depositing the dielectric multilayer film 2 composed of 41 layers of silicon oxide as the outermost layer.

  The surface roughness of sample numbers 1 to 9 is a value measured using an atomic force microscope.

  All of sample numbers 1 to 9 were cut into 10 mm × 10 mm to obtain an optical member 5. Each manufactured optical member 5 and a base 7 made of alumina having a recess having an outer dimension of 10 mm × 10 mm and an inner dimension of 8 mm × 8 mm were added with an amine-based curing agent mainly composed of a bisphenol type epoxy resin. By carrying out airtight sealing through the adhesive agent 10 which consists of a thermosetting epoxy resin, it was set as the solid-state image sensor accommodation package which has a hollow. In the hermetic sealing, the surface of the optical member 5 on which the dielectric multilayer film 2 is deposited is adhered to the base 7 via the adhesive 10, and the upper surface of the optical member 5 and the lower surface of the base 7 are sandwiched using a clip. By applying a uniform load of 100 kPa to the entire optical member 5 and leaving it to stand at 120 ° C. for 2 hours in a batch oven, the adhesive 10 made of a thermosetting epoxy resin is cured. I did it.

  Next, a leak test was performed to confirm whether the initial airtightness was secured.

The leak test was performed by a gross leak test according to MIL-Standard 883. In the gross leak test, the sealed sample is left in helium gas at a pressure of 5 × 10 ⁵ Pa for 1 hour, and then a gross leak tester (manufactured by Sumitomo 3M Co., Ltd.) is used. Immerse it in Fluorinert (Sumitomo 3M Co., Ltd., FC-40) and pass it if it does not generate open cells within 1 minute by visual judgment. Was rejected.

  Thereafter, the appearance was confirmed. As appearance confirmation, the adhesion part of the optical member 5 and the base | substrate 7 was observed using the microscope (x10 times), and the presence or absence of generation | occurrence | production of an internal flow was observed.

Those without peeling or internal flow were regarded as acceptable. The results are shown in Table 1.

  Sample numbers 3 to 7 within the scope of the present invention, that is, when the outermost low-refractive-index dielectric layer is silicon oxide and the surface roughness is 0.5 to 3.0 nm, defects due to a leak test are observed. In the appearance observation, neither peeling nor inflow of the adhesive 10 was observed, and good sealing properties were secured.

  Hereinafter, each sample will be described in detail.

  When the outermost layer is made of magnesium fluoride as in sample number 1 and the surface roughness is 0.3 nm, defects are observed by a leak test, and peeling occurs even in appearance observation, and good bonding is performed. It was confirmed that it was not.

  When the outermost layer is formed of silicon oxide as in sample number 2 and the surface roughness is 0.3 nm, a defect is observed by a leak test, and peeling is also observed in the appearance observation, and a good bonding is performed. Not confirmed.

  When the outermost layer is formed of silicon oxide as in sample numbers 3 to 5 and the high refractive index layer 3 and the low refractive index layer 4 are alternately formed, the ion beam assist method is used. In addition, the dielectric layer 1 When the layers are alternately laminated by irradiating only cations for each layer deposition and the surface roughness is 0.5 nm to 1.0 nm, no defects due to the leak test are observed, and peeling occurs even in appearance observation. In other words, the adhesive 10 did not flow in and was in a good joined state.

  When the outermost layer is formed of silicon oxide as in Sample Nos. 6 and 7 and the high refractive index layer 3 and the low refractive index layer 4 are alternately formed, the ion beam assist method is used. In addition, the dielectric layer 1 When the layers are deposited alternately by irradiating only cations for each layer deposition and the surface roughness is 2.0 nm to 3.0 nm, no defects due to the leak test are observed, and peeling occurs even in appearance observation. In spite of the fact that the adhesive 10 is sufficiently spread at the joining portion, a very good joined state in which no flow of the adhesive 10 occurs is ensured.

  When the outermost layer is formed of silicon oxide as in sample number 8 and the high refractive index layer 3 and the low refractive index layer 4 are alternately deposited, the ion beam assist method is used, and the surface roughness is 3 In the case of .5 nm, no defect due to the leak test was observed, but in the appearance observation, the flow of the adhesive 10 was observed although no peeling occurred, and the flow of the adhesive 10 was observed when the image was captured. As a result, it was confirmed that the image appears in the image and easily causes an optical defect.

  When the outermost layer is formed of silicon oxide as in sample number 9 and the high refractive index layer 3 and the low refractive index layer 4 are alternately deposited by a general vapor deposition method, and the surface roughness is 4.0 nm. In the external appearance observation, a large amount of the adhesive 10 flowed in, but no flow-out of the adhesive 10 was observed in the external appearance observation. It has been confirmed that optical defects are likely to occur.

  From the above results, the dielectric multilayer film 2 is alternately laminated by irradiating only the cations for each deposition of the dielectric layer by using an ion beam assist method using oxygen ions as cations. The high-refractive index dielectric layer 3 made of titanium oxide and the low-refractive index dielectric layer 4 made of silicon oxide are alternately laminated so that the outermost layer is silicon oxide, and the surface roughness of the outermost layer is 0.5-3. It was confirmed that by setting the thickness to 0 nm, it had good adhesiveness, and when the adhesive flowed in, it was possible to effectively prevent the problem of appearing in the image as an image stain.

  A solid-state image pickup device storage package (Rate No. 1 to 9) in which the surfaces of the optical member 5 on which the dielectric multilayer film 2 is deposited and attached to the base 7 via the adhesive 10 are heated at a temperature of 150 ° C. for 1 minute. Then, when the adhesive 10 was observed with a microscope by applying a thermal stress by cooling, in the sample number 1 in which the outermost layer is made of the dielectric multilayer film 2 of magnesium fluoride, It was found that peeling occurred between the dielectric multilayer film 2 and other samples Nos. 2 to 9 did not peel.

  As described above, the adhesive strength can be improved by bringing the adhesive 10 into direct contact with the dielectric multilayer film 2 in which the outermost layer of the present invention is the outermost low refractive index dielectric layer made of silicon oxide against thermal stress. all right. Further, it was found that the surface roughness Ra of the outermost low refractive index dielectric layer is preferably 0.5 to 3.0 nm in the evaluation under more severe conditions as in Example 1.

  In addition, this invention is not limited to the said embodiment and Example, A various change may be performed in the range which does not deviate from the summary of this invention.

It is sectional drawing which shows an example of embodiment of the solid-state imaging device of this invention. FIG. 2 is an enlarged cross-sectional view of a main part of the dielectric multilayer film of FIG. 1. It is sectional drawing which shows the other example of embodiment of the solid-state imaging device of this invention. It is sectional drawing which shows the other example of embodiment of the solid-state imaging device of this invention.

Explanation of symbols

1: Translucent substrate 2: Dielectric multilayer film 3: High refractive index dielectric layer 4: Low refractive index dielectric layer 6: Solid-state imaging device 7: Substrate 8: Wiring conductor 10: Adhesive 14: Surface of outermost layer

Claims (10)

A base having a housing portion for housing the solid-state imaging device and an opening for introducing light into the light-receiving portion of the solid-state imaging device on the top surface, and an adhesive so as to block the opening And a translucent substrate attached to the base via a solid-state imaging device storage package, wherein a main surface of the translucent substrate to be joined to the base has a high refractive index dielectric layer and a low The outermost low refractive index dielectric layer is formed by alternately stacking a plurality of refractive index dielectric layers and forming an outermost low refractive index dielectric layer made of silicon oxide as the outermost low refractive index dielectric layer. A package for storing a solid-state imaging device, wherein the adhesive is directly brought into contact with the package. 2. The package for housing a solid-state imaging device according to claim 1, wherein the outermost low refractive index dielectric layer has a surface roughness Ra of 0.5 to 3.0 nm. The package for housing a solid-state image pickup device according to claim 1 or 2, wherein a surface roughness Ra of the translucent substrate is 0.20 nm or less. The dielectric multilayer film is formed by depositing one layer of the high-refractive index dielectric layer or the low-refractive index dielectric layer, and then irradiating the surface with only cations for a predetermined time. The solid-state image sensor storage package according to any one of claims 1 to 3. A wiring conductor is formed on the outer peripheral portion of the main surface of the translucent substrate, and a solid-state imaging device is electrically connected to the wiring conductor, and the outer peripheral edge of the solid-state imaging device is bonded to the translucent substrate with an adhesive. In the solid-state imaging device mounting substrate for bonding to the outer surface, a plurality of high-refractive index dielectric layers and low-refractive index dielectric layers are alternately stacked on the main surface, and the outermost layer is made of silicon oxide. A substrate for mounting a solid-state imaging device, wherein a dielectric multilayer film as a low refractive index dielectric layer is formed, and the adhesive is brought into direct contact with the outermost low refractive index dielectric layer. 6. The substrate for mounting a solid-state imaging device according to claim 5, wherein the outermost low refractive index dielectric layer has a surface roughness Ra of 0.5 to 3.0 nm. The solid-state image pickup device mounting substrate according to claim 5 or 6, wherein a surface roughness Ra of the translucent substrate is 0.20 nm or less. The dielectric multilayer film is formed by depositing one layer of the high-refractive index dielectric layer or the low-refractive index dielectric layer, and then irradiating the surface with only cations for a predetermined time. Item 9. A package for housing a solid-state imaging device according to any one of Items 5 to 8. 5. The solid-state imaging device is housed in the housing portion of the solid-state imaging device housing package according to claim 1, and light that has passed through the dielectric multilayer film and the translucent substrate is captured by the solid-state imaging device. A solid-state imaging device characterized by being coupled to an element. A solid-state image pickup device is electrically connected to the wiring conductor of the solid-state image pickup device mounting substrate according to any one of claims 5 to 8, and an outer peripheral edge of the solid-state image pickup device is bonded with an adhesive. A solid-state image pickup device, wherein the solid-state image pickup device is bonded to a substrate, and light transmitted through the dielectric multilayer film and the translucent substrate is combined with the solid-state image pickup device.

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