JP2007013050A - Reflective photosensor - Google Patents

Reflective photosensor Download PDF

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JP2007013050A
JP2007013050A JP2005195132A JP2005195132A JP2007013050A JP 2007013050 A JP2007013050 A JP 2007013050A JP 2005195132 A JP2005195132 A JP 2005195132A JP 2005195132 A JP2005195132 A JP 2005195132A JP 2007013050 A JP2007013050 A JP 2007013050A
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light emitting
substrate
light
photo
emitting diode
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Kazuo Funakubo
一夫 舟久保
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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<P>PROBLEM TO BE SOLVED: To provide a reflective photosensor provided with light shielding structure preventing malfunction and improving detection accuracy by surely preventing light leakage generated between a light emitting member and a light receiving member arranged on a substrate. <P>SOLUTION: The reflective photosensor 21 is provided with: the substrate 22 on which an electrode pattern and an external connection terminal 27 are formed; a light emitting diode 23 and a photo IC 24 arranged on the substrate 22; and an inwall 25 formed between the light emitting diode 23 and the photo IC 24. A grooved recess 28 dividing the light emitting diode 23 and the photo IC 24 from each other is formed on the surface of the substrate 22, and the lower end of the inwall 25 is engaged with the inside of the recess 28. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、被検出物を光の反射によって検出する反射型フォトセンサに関するものである。   The present invention relates to a reflective photosensor that detects an object to be detected by reflection of light.

反射型フォトセンサは、非接触で物体の有無を検出する光センサであり、モータ等の回転体や紙、フィルム等の位置や端部の検出などに使用されている。図６及び図７は、従来の反射型フォトセンサの構成例を示したものである（特許文献１参照）。この反射型フォトセンサ１は、回路パターンが形成された基板２と、この基板２上に実装される発光部材（発光ダイオード）３及び受光部材（フォトトランジスタ）４と、前記基板２上に接合され、前記発光ダイオード３とフォトトランジスタ４が実装された領域を仕切る枠体５とで構成されている。前記基板２は、エポキシ等の樹脂材で四角形状に形成され、表面又は裏面に電極パターン６、側面にスルーホールによって形成された外部接続端子７が前記発光ダイオード３及びフォトトランジスタ４に対応して設けられている。前記発光ダイオード３及びフォトトランジスタ４は、前記電極パターン６上に表面実装されている。また、前記外部接続端子７は、前記発光ダイオード３に対して２箇所、フォトトランジスタ４に対して２箇所の計４箇所に設けられている。枠体５は、カーボン等の遮光性を有した材料を含んだ樹脂材で形成され、前記発光ダイオード３及びフォトトランジスタ４の外周を囲う外壁９と、発光ダイオード３とフォトトランジスタ４との間を仕切る内壁８とによって一体形成されている。なお、前記枠体５は、前記基板２上に接着剤等を介して接合される。   A reflective photosensor is an optical sensor that detects the presence or absence of an object in a non-contact manner, and is used to detect the position and edge of a rotating body such as a motor, paper, and film. 6 and 7 show a configuration example of a conventional reflective photosensor (see Patent Document 1). The reflective photosensor 1 is bonded to the substrate 2, a substrate 2 on which a circuit pattern is formed, a light emitting member (light emitting diode) 3 and a light receiving member (phototransistor) 4 mounted on the substrate 2. The light-emitting diode 3 and a frame 5 that partitions the region where the phototransistor 4 is mounted. The substrate 2 is formed in a square shape with a resin material such as epoxy, and external connection terminals 7 formed by electrode patterns 6 on the front or back surface and through holes on the side surface correspond to the light emitting diode 3 and the phototransistor 4. Is provided. The light emitting diode 3 and the phototransistor 4 are surface-mounted on the electrode pattern 6. The external connection terminals 7 are provided at a total of four locations, two locations for the light emitting diode 3 and two locations for the phototransistor 4. The frame 5 is formed of a resin material containing a light-shielding material such as carbon, and the outer wall 9 surrounding the outer periphery of the light emitting diode 3 and the phototransistor 4, and between the light emitting diode 3 and the phototransistor 4. It is integrally formed with the partitioning inner wall 8. The frame body 5 is bonded onto the substrate 2 via an adhesive or the like.

図７に示したように、前記内壁８を有した枠体５によって、発光ダイオード３による発光領域と、フォトトランジスタ４による受光領域とが分離され、上方を通過あるいは接近する被検出物１０で反射されてきた光のみを前記フォトトランジスタ４で検出することができるようになっている。   As shown in FIG. 7, the light emitting region by the light emitting diode 3 and the light receiving region by the phototransistor 4 are separated by the frame 5 having the inner wall 8 and reflected by the detected object 10 passing or approaching above. Only the emitted light can be detected by the phototransistor 4.

図８は、上記反射型フォトセンサ１の等価回路を示したものである。前記フォトトランジスタ４は、フォトダイオード４ａの後段にトランジスタ４ｂを付加した構造となっている。また、ＯＮ／ＯＦＦによるスイッチング出力が得られることでデジタル的な用途に用いられている。なお、前記発光ダイオード３とフォトトランジスタ４は、基板２上に独立して実装され、それぞれ２端子からなる外部接続端子７ａ〜７ｄを備えている。   FIG. 8 shows an equivalent circuit of the reflective photosensor 1. The phototransistor 4 has a structure in which a transistor 4b is added after the photodiode 4a. In addition, it is used for digital purposes by obtaining a switching output by ON / OFF. The light emitting diode 3 and the phototransistor 4 are independently mounted on the substrate 2 and have external connection terminals 7a to 7d each having two terminals.

一方、センサシステムの小型化や高機能化を図るために、前記フォトトランジスタ４に代えてフォトＩＣを使用する場合が多くなっている。このフォトＩＣを用いた反射型フォトセンサの等価回路を図９に示す。前記フォトＩＣ１４は、フォトダイオード１４ａとトランジスタ１４ｂとの間に信号処理回路（ＩＣ）１４ｃを設けて構成されている。このフォトＩＣ１４を用いて構成された反射型フォトセンサ１１によれば、前記ＩＣ１４に電圧を供給する電源電圧パターンや接地パターンに接続される外部接続端子１７ｄ，１７ｅが別途必要となり、前記発光ダイオード１３とフォトＩＣ１４とを完全に独立して基板２上に実装させる場合は、最低５箇所の外部接続端子１７ａ〜１７ｅが必要となる。このため、４箇所の外部接続端子７ａ〜７ｄを備えた反射型フォトセンサ１と、５箇所以上の外部接続端子１７ａ〜１７ｅを備えた反射型フォトセンサ１１とでは、実装に関する互換性がなく、マザーボードを含むセンサシステムの設計変更が必要となっている。   On the other hand, a photo IC is often used in place of the phototransistor 4 in order to reduce the size and increase the functionality of the sensor system. An equivalent circuit of a reflection type photosensor using this photo IC is shown in FIG. The photo IC 14 is configured by providing a signal processing circuit (IC) 14c between a photodiode 14a and a transistor 14b. According to the reflection type photosensor 11 configured using the photo IC 14, external connection terminals 17 d and 17 e connected to a power supply voltage pattern and a ground pattern for supplying a voltage to the IC 14 are separately required. And the photo IC 14 are mounted on the substrate 2 completely independently, at least five external connection terminals 17a to 17e are required. For this reason, the reflection type photosensor 1 having four external connection terminals 7a to 7d and the reflection type photosensor 11 having five or more external connection terminals 17a to 17e have no mounting compatibility. It is necessary to change the design of the sensor system including the motherboard.

前記５箇所以上の外部接続端子を有する反射型フォトセンサ１１を前記反射型フォトセンサ１のように、４箇所の外部接続端子を備えた構成にする場合は、前記電源電圧パターンや接地パターンを発光ダイオード１３とフォトＩＣ１４とで共用化させることで実現が可能であるが、基板上に形成される電極パターンが増えることになる。
特開平１１−２８９１０５号公報 （第４項、第９図） When the reflective photosensor 11 having the five or more external connection terminals is configured to have four external connection terminals like the reflective photosensor 1, the power supply voltage pattern and the ground pattern are emitted. This can be realized by sharing the diode 13 and the photo IC 14, but the number of electrode patterns formed on the substrate increases.
Japanese Patent Laid-Open No. 11-289105 (4th, FIG. 9)

ところで、上記反射型フォトセンサ１にあっては、発光ダイオード３とフォトトランジスタ４とが基板２上に独立した実装領域を有しているものの、前記基板２の製造上のバラツキ等によって、表面にわずかながら凹凸が生じている場合がある。一方、前記枠体５は、外壁９と内壁８が略同じ高さで形成されている。このため、前記枠体５を基板２上に載置した際に、内壁８の下端部に隙間が生じ、この隙間から前記発光ダイオード３から発せられた光がフォトトランジスタ４側に漏れるおそれがある。また、前記隙間は、使用環境の温度変化等による枠体５の伸縮によって生じる場合もある。このような光漏れが発生すると、フォトダイオード４で反応してしまい、誤った検出信号を発生させたり、検出の感度を低くさせてしまったりする場合がある。   By the way, in the reflection type photosensor 1, although the light emitting diode 3 and the phototransistor 4 have independent mounting regions on the substrate 2, due to variations in manufacturing of the substrate 2, etc. There may be slight unevenness. On the other hand, the frame 5 is formed such that the outer wall 9 and the inner wall 8 have substantially the same height. For this reason, when the frame 5 is placed on the substrate 2, a gap is formed at the lower end portion of the inner wall 8, and light emitted from the light emitting diode 3 may leak to the phototransistor 4 side from the gap. . Moreover, the said clearance gap may arise by expansion / contraction of the frame 5 by the temperature change etc. of use environment. When such light leakage occurs, it reacts with the photodiode 4 and may generate an erroneous detection signal or reduce the detection sensitivity.

また、図９に示したような、フォトＩＣ１４を備えた、反射型フォトセンサ１１にあっては、前述したように、外部接続端子の数を４端子に抑えた構造にすることは可能であるが、ＶＩＮやＧＮＤを発光ダイオード１３とフォトＩＣ１４とで共用させるため、配線パターンが枠体５の内壁８の下を通ることになる。このため、前記内壁８の下端部と基板２との間に隙間が生じ、この隙間からフォトＩＣ１４側に発光ダイオード１３から発せられた光が漏れ出すといった問題があり、検出の誤作動や検出感度の低下を引き起こすおそれがあった。   Further, as described above, the reflection type photosensor 11 having the photo IC 14 as shown in FIG. 9 can have a structure in which the number of external connection terminals is suppressed to four terminals. However, since VIN and GND are shared by the light emitting diode 13 and the photo IC 14, the wiring pattern passes under the inner wall 8 of the frame 5. For this reason, a gap is formed between the lower end portion of the inner wall 8 and the substrate 2, and there is a problem that light emitted from the light emitting diode 13 leaks to the photo IC 14 side from this gap. There was a risk of lowering

そこで、本発明の目的は、基板上に配置される発光部材と受光部材との間の生じる光漏れを確実に防止することによって、誤作動を防止して検出精度の向上を図ることが可能な遮光構造を備えた反射型フォトセンサを提供することである。   Accordingly, an object of the present invention is to reliably prevent light leakage between a light emitting member and a light receiving member disposed on a substrate, thereby preventing malfunction and improving detection accuracy. To provide a reflective photosensor having a light shielding structure.

上記課題を解決するために、本発明の反射型フォトセンサは、電極パターン及び外部接続端子が形成された基板と、この基板上に配置される発光部材及び受光部材と、該発光部材と受光部材との間に設けられる遮光壁とを備えた反射型フォトセンサにおいて、前記基板の表面に前記発光部材と受光部材との間を仕切る溝状の凹部を設け、この凹部内に前記遮光壁の下端部を嵌め込んで形成したことを特徴とする。   In order to solve the above problems, a reflective photosensor of the present invention includes a substrate on which an electrode pattern and external connection terminals are formed, a light emitting member and a light receiving member disposed on the substrate, and the light emitting member and the light receiving member. A reflection-type photosensor provided with a light-shielding wall provided between the light-emitting member and the light-receiving member. It is characterized by being formed by fitting the part.

また、本発明の反射型フォトセンサは、電極パターン及び外部接続端子が形成された基板と、この基板上に配置される発光部材及び受光部材と、該発光部材と受光部材の周囲を囲う外壁及び前記発光部材と受光部材との間を仕切る遮光壁からなる枠体とを備えた反射型フォトセンサにおいて、前記基板の表面に前記発光部材と受光部材との間を仕切る溝状の凹部が設けられ、この凹部内に前記遮光壁の下端部を嵌め込むことによって、前記枠体を基板上に配置したことを特徴とする。   The reflective photosensor of the present invention includes a substrate on which an electrode pattern and external connection terminals are formed, a light emitting member and a light receiving member disposed on the substrate, an outer wall surrounding the light emitting member and the light receiving member, In a reflection type photosensor having a frame made of a light shielding wall for partitioning between the light emitting member and the light receiving member, a groove-shaped recess for partitioning between the light emitting member and the light receiving member is provided on the surface of the substrate. The frame is disposed on the substrate by fitting the lower end of the light shielding wall into the recess.

本発明に係る反射型フォトセンサによれば、基板上に実装される発光部材と受光部材との間を仕切る遮光壁と基板面との間に隙間が生じることなく、確実に遮光されるので、発光部材から漏れた光による誤検出を有効に防止することができ、被検出物の検出精度の向上効果が得られる。   According to the reflection type photosensor according to the present invention, light is reliably shielded without causing a gap between the light shielding wall that partitions the light emitting member and the light receiving member mounted on the substrate and the substrate surface. An erroneous detection due to light leaking from the light emitting member can be effectively prevented, and an effect of improving the detection accuracy of the detection object can be obtained.

また、前記受光部材に各種の信号処理回路が付加されたフォトＩＣを用いた場合にあっても、前記発光部材と受光部材との電源電圧やグランド等の配線パターンを共用させると共に、この共用させた配線パターンを前記基板の裏面側に形成することによって、前記遮光壁と基板面との密着性を妨げずに確実に光漏れを防止することができる。   Even when a photo IC in which various signal processing circuits are added to the light receiving member is used, the power supply voltage and ground wiring patterns of the light emitting member and the light receiving member are shared and shared. By forming the wiring pattern on the back side of the substrate, light leakage can be reliably prevented without impeding the adhesion between the light shielding wall and the substrate surface.

以下、添付図面に基づいて本発明に係る反射型フォトセンサの実施形態を詳細に説明する。   Hereinafter, embodiments of a reflective photosensor according to the present invention will be described in detail with reference to the accompanying drawings.

図１乃至図３に示すように本発明の反射型フォトセンサ２１は、回路パターンが形成された基板２２と、この基板２２上に隣接して設けられる発光部材（発光ダイオード）２３及び受光部材（フォトＩＣ）２４と、前記発光ダイオード２３とフォトＩＣ２４との間を仕切る遮光壁（内壁）２５を備えた枠体２６とで構成されている。   As shown in FIGS. 1 to 3, a reflective photosensor 21 of the present invention includes a substrate 22 on which a circuit pattern is formed, a light emitting member (light emitting diode) 23 and a light receiving member (adjacently provided on the substrate 22). Photo IC) 24 and a frame body 26 having a light shielding wall (inner wall) 25 for partitioning between the light emitting diode 23 and the photo IC 24.

前記基板２２は、エポキシ等の樹脂材で四角形状に形成され、その表面に前記発光ダイオード２３とフォトＩＣ２４を実装するための電極パターン２３ａ，２４ａ、裏面に前記電極パターン２３ａ，２４ａとそれぞれ導通する電極パターン２３ｂ，２４ｂが形成されている。また、前記基板２２の側面には、表面側の電極パターン２３ａ，２４ａと裏面側の電極パターン２３ｂ，２４ｂとを導通させると共に、マザーボード等に半田部材を介して実装するためのスルーホールとして形成された外部接続端子２７が４箇所に設けられている。また、前記基板２２の表面には、後述する枠体２６の内壁２５の下端部が嵌り込む溝状の凹部２８が形成されている。この凹部２８は、前記電極パターン２３ａが形成されている実装領域と電極パターン２４ａが形成されている実装領域との間を仕切る位置に設けられる。   The substrate 22 is formed in a square shape with a resin material such as epoxy, and is electrically connected to the electrode patterns 23a and 24a for mounting the light emitting diode 23 and the photo IC 24 on the front surface and the electrode patterns 23a and 24a on the back surface. Electrode patterns 23b and 24b are formed. Further, on the side surface of the substrate 22, the electrode patterns 23a, 24a on the front surface side and the electrode patterns 23b, 24b on the back surface side are electrically connected, and are formed as through holes for mounting on a mother board or the like via a solder member. External connection terminals 27 are provided at four locations. Further, a groove-like recess 28 into which a lower end portion of an inner wall 25 of a frame body 26 to be described later is fitted is formed on the surface of the substrate 22. The recess 28 is provided at a position that partitions the mounting area where the electrode pattern 23a is formed and the mounting area where the electrode pattern 24a is formed.

前記反射型フォトセンサ２１の回路構成例を図４及び図５に示す。この図４及び図５に示されている回路Ａと回路Ｂは、発光ダイオード２３とフォトＩＣ２４と４個の外部接続端子２７ａ〜２７ｄで構成されている点で共通しているが、外部接続端子２７ａ〜２７ｄの機能に違いがある。前記回路Ａは、外部接続端子２７ｂが発光ダイオード２３のカソード電極とフォトＩＣ２４の接地電極（ＧＮＤ）との共通の端子となっており、外部接続端子２７ａが発光ダイオード２３のアノード電極、外部接続端子２７ｃがフォトＩＣ２４の電源電圧端子（ＶＩＮ）、そして、外部接続端子２７ｄがフォトＩＣ２４のセンサ出力端子となっている。これに対して、回路Ｂは、外部接続端子２７ａが発光ダイオード２３のアノード電極とフォトＩＣ２４のＶＩＮとの共通の端子で、外部接続端子２７ｃがフォトＩＣ２４のセンサ出力端子、外部接続端子２７ｄがフォトＩＣ２４のＧＮＤ端子となっている。回路Ａと回路Ｂは、外部接続端子の構成が異なるが、センサとしての機能は同一である。前記発光ダイオード２３とフォトＩＣ２４との共通の配線パターン３０は、図２及び図３に示されるように、前記凹部２８が形成されていない基板２２の裏面側に形成される。   Examples of the circuit configuration of the reflective photosensor 21 are shown in FIGS. The circuit A and the circuit B shown in FIGS. 4 and 5 are common in that the light emitting diode 23, the photo IC 24, and the four external connection terminals 27a to 27d are configured. There is a difference in the functions of 27a to 27d. In the circuit A, the external connection terminal 27b is a common terminal for the cathode electrode of the light emitting diode 23 and the ground electrode (GND) of the photo IC 24, and the external connection terminal 27a is the anode electrode of the light emitting diode 23, and the external connection terminal. 27 c is a power supply voltage terminal (VIN) of the photo IC 24, and an external connection terminal 27 d is a sensor output terminal of the photo IC 24. On the other hand, in the circuit B, the external connection terminal 27a is a common terminal of the anode electrode of the light emitting diode 23 and the VIN of the photo IC 24, the external connection terminal 27c is a sensor output terminal of the photo IC 24, and the external connection terminal 27d is a photo. This is the GND terminal of the IC 24. The circuit A and the circuit B are different in the configuration of the external connection terminal, but have the same function as a sensor. As shown in FIGS. 2 and 3, the common wiring pattern 30 for the light emitting diode 23 and the photo IC 24 is formed on the back side of the substrate 22 where the concave portion 28 is not formed.

図１乃至図３に示した枠体２６は、カーボン等の遮光性を有した材料を含んだ液晶ポリマー等からなる樹脂材で形成され、前記発光ダイオード２３及びフォトＩＣ２４の側面を囲う外壁２９と、前記発光ダイオード２３とフォトＩＣ２４とが対向する間を仕切る内壁２５とで一体形成されている。前記内壁２５は、下端部が外壁２９より下側に突出して形成され、前記基板２２に形成された凹部２８に嵌り込んで固定される。これによって、前記外壁２９の下端部が基板２２の外周縁に沿って載置され、内壁２５は下端部が凹部２８内に嵌り込んだ状態で密着されることになる。なお、前記外壁２９は、外部からの光を遮り、被検出物３１への集光性を高めるために設けられる。   The frame 26 shown in FIGS. 1 to 3 is formed of a resin material made of a liquid crystal polymer or the like containing a light-shielding material such as carbon, and has an outer wall 29 surrounding the side surfaces of the light emitting diode 23 and the photo IC 24. The light emitting diode 23 and the photo IC 24 are integrally formed with an inner wall 25 that divides the facing area. The inner wall 25 has a lower end projecting downward from the outer wall 29 and is fixed by being fitted into a recess 28 formed in the substrate 22. As a result, the lower end portion of the outer wall 29 is placed along the outer peripheral edge of the substrate 22, and the inner wall 25 is brought into close contact with the lower end portion fitted in the recess 28. The outer wall 29 is provided in order to block light from the outside and improve the light collecting property to the detected object 31.

図２に示したように、本実施形態の反射型フォトセンサ２１は、基板２２の裏面側にＶＩＮやＧＮＤの共通ラインが形成され、表面側には前記発光ダイオード２３とフォトＩＣ２４との間を導通させるための電極パターンがなく、それぞれが前記凹部２８を挟んで独立して設けられている。これによって、前記内壁２５の下端部を基板２２の表面を凹設した凹部２８に嵌め込んで密着固定することが可能となり、前記発光ダイオード２３からフォトＩＣ２４側への発光漏れによる誤作動を有効に防止することができる。その結果、被検出物３１によって反射された光のみをフォトＩＣ２４で検出することができ、誤作動が確実に防止される。   As shown in FIG. 2, in the reflection type photosensor 21 of the present embodiment, a common line of VIN or GND is formed on the back side of the substrate 22, and between the light emitting diode 23 and the photo IC 24 on the front side. There is no electrode pattern for electrical connection, and each pattern is provided independently with the recess 28 interposed therebetween. As a result, the lower end portion of the inner wall 25 can be fitted and fixed in a recessed portion 28 with the surface of the substrate 22 recessed, and malfunction due to light emission leakage from the light emitting diode 23 to the photo IC 24 side is effectively performed. Can be prevented. As a result, only the light reflected by the detected object 31 can be detected by the photo IC 24, and malfunction is reliably prevented.

上記図１乃至図５に示した反射型フォトセンサ２１は、受光部材にフォトＩＣ２４を用い、内部の配線パターンの一部を共用化することで、外部接続端子を４端子にして構成してある。これ以外にも、発光部材と受光部材の回路が分離可能な５端子以上の外部接続端子を備えた反射型フォトセンサや、受光部材がフォトダイオードやフォトトランジスタで構成された反射型フォトセンサに対しても、前記枠体２６の内壁２５を基板２２に設けた凹部２８に嵌め込ませることで、前記内壁２５の下端部と基板２２との間に隙間が生じるのを有効に防止することができる。   The reflection type photosensor 21 shown in FIGS. 1 to 5 uses a photo IC 24 as a light receiving member, and shares a part of an internal wiring pattern, thereby configuring four external connection terminals. . In addition to this, for reflective photosensors having five or more external connection terminals in which the light emitting member and light receiving member circuits can be separated, and for reflective photosensors in which the light receiving member is composed of a photodiode or a phototransistor. However, by fitting the inner wall 25 of the frame body 26 into the recess 28 provided in the substrate 22, it is possible to effectively prevent a gap from being generated between the lower end portion of the inner wall 25 and the substrate 22.

以上、説明したように、本発明の反射型フォトセンサ２１によれば、発光ダイオード２３からなる発光部材とフォトＩＣ２４やフォトトランジスタ、フォトダイオードのいずれかからなる受光部材との間を仕切る内壁２５の下端部が基板２２に設けた凹部２８に嵌め込まれているため、前記発光部材から発せられる光の側面方向への漏れを完全に遮断することができる。このため、意図しない発光に伴う誤検出が減少し、検出の精度を高めることができる。また、前記受光部材が各種の信号処理回路が付加されたフォトＩＣ２４で構成され、それに伴って内部の配線パターンの一部を共用化した場合にあっても、その共用化した配線パターンを基板２２の裏面に形成することで、前記内壁２５の下端部に配線に伴う隙間を生じることがない。さらに、前記配線パターンの一部を共用化したことによって、外部接続端子の数を増やさなくて済むため、フォトダイオードやフォトトランジスタで構成された反射型フォトセンサから上記実施形態のフォトＩＣで構成された反射型フォトセンサ２１への切り替えがマザーボード等の設計変更を伴わずにスムーズに行えるといった利点がある。   As described above, according to the reflective photosensor 21 of the present invention, the inner wall 25 that partitions between the light emitting member made of the light emitting diode 23 and the light receiving member made of any one of the photo IC 24, the phototransistor, and the photodiode. Since the lower end portion is fitted in the recess 28 provided in the substrate 22, the leakage of light emitted from the light emitting member in the side surface direction can be completely blocked. For this reason, erroneous detection due to unintended light emission is reduced, and detection accuracy can be increased. Further, even when the light receiving member is composed of the photo IC 24 to which various signal processing circuits are added, and a part of the internal wiring pattern is shared along with the photo IC 24, the shared wiring pattern is used as the substrate 22. By forming it on the back surface of the inner wall 25, there is no gap associated with the wiring at the lower end of the inner wall 25. Furthermore, since a part of the wiring pattern is shared, it is not necessary to increase the number of external connection terminals, so that the reflection type photosensor constituted by a photodiode or a phototransistor is used for the photo IC of the above embodiment. Further, there is an advantage that the switching to the reflective photosensor 21 can be smoothly performed without changing the design of the motherboard or the like.

なお、上記実施形態では、発光部材と受光部材との間を仕切る遮光壁が枠体２６の内壁２５として一体形成したものであるが、前記枠体２６とは別に独立した遮光壁を用いて構成してもよい。   In the above-described embodiment, the light shielding wall that partitions the light emitting member and the light receiving member is integrally formed as the inner wall 25 of the frame body 26, but is configured using a light shielding wall independent from the frame body 26. May be.

本発明に係る反射型フォトセンサの斜視図である。1 is a perspective view of a reflective photosensor according to the present invention. 上記反射型フォトセンサの断面図である。It is sectional drawing of the said reflection type photosensor. 上記反射型フォトセンサの組立断面図である。It is assembly sectional drawing of the said reflection type photosensor. 上記反射型フォトセンサのＧＮＤを共用化した回路図である。It is a circuit diagram which shared GND of the said reflection type photosensor. 上記反射型フォトセンサのＶＩＮを共用化した回路図である。It is a circuit diagram which shared VIN of the said reflection type photosensor. 従来の反射型フォトセンサの斜視図である。It is a perspective view of the conventional reflection type photosensor. 従来の反射型フォトセンサの断面図である。It is sectional drawing of the conventional reflection type photosensor. 従来のアナログ出力対応の反射型フォトセンサの回路図である。It is a circuit diagram of a conventional reflection type photosensor compatible with analog output. 従来のデジタル出力対応の反射型フォトセンサの回路図である。It is a circuit diagram of the reflection type photosensor corresponding to the conventional digital output.

符号の説明Explanation of symbols

２１ 反射型フォトセンサ
２２ 基板
２３ 発光ダイオード（発光部材）
２３ａ 電極パターン
２３ｂ 電極パターン
２４ フォトＩＣ（受光部材）
２４ａ 電極パターン
２４ｂ 電極パターン
２５ 内壁（遮光壁）
２６ 枠体
２７ 外部接続端子
２８ 凹部
２９ 外壁
３０ 配線パターン
３１ 被検出物
21 reflection type photo sensor 22 substrate 23 light emitting diode (light emitting member)
23a Electrode pattern 23b Electrode pattern 24 Photo IC (light receiving member)
24a Electrode pattern 24b Electrode pattern 25 Inner wall (light-shielding wall)
26 Frame 27 External connection terminal 28 Recess 29 Outer wall 30 Wiring pattern 31 Object to be detected

Claims (9)

電極パターン及び外部接続端子が形成された基板と、この基板上に配置される発光部材及び受光部材と、該発光部材と受光部材との間に設けられる遮光壁とを備えた反射型フォトセンサにおいて、
前記基板の表面に前記発光部材と受光部材との間を仕切る溝状の凹部を設け、この凹部内に前記遮光壁の下端部を嵌め込んで形成したことを特徴とする反射型フォトセンサ。 In a reflective photosensor comprising a substrate on which an electrode pattern and an external connection terminal are formed, a light emitting member and a light receiving member disposed on the substrate, and a light shielding wall provided between the light emitting member and the light receiving member ,
A reflection type photosensor comprising a groove-like recess for partitioning between the light-emitting member and the light-receiving member on the surface of the substrate, and the lower end portion of the light shielding wall is fitted into the recess. 電極パターン及び外部接続端子が形成された基板と、この基板上に配置される発光部材及び受光部材と、該発光部材と受光部材の周囲を囲う外壁及び前記発光部材と受光部材との間を仕切る遮光壁からなる枠体とを備えた反射型フォトセンサにおいて、
前記基板の表面に前記発光部材と受光部材との間を仕切る溝状の凹部が設けられ、この凹部内に前記遮光壁の下端部を嵌め込むことによって、前記枠体を基板上に配置したことを特徴とする反射型フォトセンサ。 A substrate on which an electrode pattern and external connection terminals are formed, a light emitting member and a light receiving member arranged on the substrate, an outer wall surrounding the light emitting member and the light receiving member, and the light emitting member and the light receiving member are partitioned. In a reflection type photosensor having a frame made of a light shielding wall,
A groove-like recess for partitioning the light emitting member and the light receiving member is provided on the surface of the substrate, and the frame is disposed on the substrate by fitting the lower end of the light shielding wall into the recess. A reflective photosensor characterized by 前記発光部材は、発光ダイオードによって構成される請求項１又は２記載の反射型フォトセンサ。 The reflective photosensor according to claim 1, wherein the light emitting member is formed of a light emitting diode. 前記受光部材は、フォトダイオード、フォトトランジスタ又はフォトＩＣで構成される請求項１又は２記載の反射型フォトセンサ。 The reflective photosensor according to claim 1, wherein the light receiving member includes a photodiode, a phototransistor, or a photo IC. 前記遮光壁は、下端部が前記外壁の下端部より下側に突出して形成されている請求項２記載の反射型フォトセンサ。 The reflection type photosensor according to claim 2, wherein the light shielding wall has a lower end projecting downward from a lower end of the outer wall. 前記受光部材は、フォトＩＣで構成され、このフォトＩＣに接続される電源電圧パターン又は接地パターンの少なくとも一方を前記発光ダイオードと共通接続させた請求項１又は２記載の反射型フォトセンサ。 The reflective photosensor according to claim 1 or 2, wherein the light receiving member is formed of a photo IC, and at least one of a power supply voltage pattern or a ground pattern connected to the photo IC is connected in common with the light emitting diode. 前記電源電圧パターン又は接地パターンは、前記基板の裏面に形成される請求項６記載の反射型フォトセンサ。 The reflective photosensor according to claim 6, wherein the power supply voltage pattern or the ground pattern is formed on a back surface of the substrate. 前記基板には、発光ダイオードのアノード電極端子と、フォトＩＣのセンサ出力端子と、電源電圧端子と、前記発光ダイオードのカソード電極及びフォトＩＣの接地電極が共通のグランド端子とが設けられている請求項１，２，６のいずれかに記載の反射型フォトセンサ。 The substrate is provided with an anode electrode terminal of a light emitting diode, a sensor output terminal of a photo IC, a power supply voltage terminal, and a ground terminal that shares a cathode electrode of the light emitting diode and a ground electrode of the photo IC. Item 7. The reflective photosensor according to any one of Items 1, 2, and 6. 前記基板には、発光ダイオードのカソード電極端子と、フォトＩＣのセンサ出力端子と、グランド端子と、前記発光ダイオードのアノード電極及びフォトＩＣの電源電極が共通の電源電圧端子とが設けられている請求項１，２，６のいずれかに記載の反射型フォトセンサ。 The substrate is provided with a cathode electrode terminal of a light emitting diode, a sensor output terminal of a photo IC, a ground terminal, and a power supply voltage terminal in which the anode electrode of the light emitting diode and the power electrode of the photo IC are shared. Item 7. The reflective photosensor according to any one of Items 1, 2, and 6.
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