JP2007005439A - Hermetic seal package and its manufacturing method - Google Patents

Hermetic seal package and its manufacturing method Download PDF

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JP2007005439A
JP2007005439A JP2005181775A JP2005181775A JP2007005439A JP 2007005439 A JP2007005439 A JP 2007005439A JP 2005181775 A JP2005181775 A JP 2005181775A JP 2005181775 A JP2005181775 A JP 2005181775A JP 2007005439 A JP2007005439 A JP 2007005439A
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sealing member
package
sealing
seal ring
melting point
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JP4947925B2 (en
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Mitsunori Ishizaki
光範 石崎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a hermetic seal package capable of improving the reliability of airtightness, and also to provide a manufacturing method of the hermetic seal package. <P>SOLUTION: The hermetic seal package 20 comprises a package body 1, a first sealing member 7, a second sealing member 11, and a cover member 19. The first sealing member 7 is bonded to the package body 1. The second sealing member 11 has a lower melting point than that of the first sealing member 7, and is bonded to the first sealing member 7. The cover member 19 is joined with the first sealing member 7 with the aid of the second sealing member 11. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は気密封止パッケージおよびその製造方法に関し、より特定的には内部に収納する電子部品を気密封止するための気密封止パッケージおよびその製造方法に関するものである。   The present invention relates to a hermetically sealed package and a method for manufacturing the same, and more particularly to a hermetic sealed package for hermetically sealing an electronic component housed therein and a method for manufacturing the same.

従来の気密封止パッケージとして、金属のベースとこのベース上に多段に積層されたセラミック層あるいは多層のセラミックのみで構成された電子部品を搭載するためのキャリア基板と、セラミックス上に電子部品を取り囲むように形成した導体層と、この導体層にろう材を用いてろう付けされた金属製のシールリングと、このシールリングに溶接される金属製の蓋とを備えた気密封止パッケージがある。この気密封止パッケージは、ろう付けによってキャリア基板とシールリングとの気密を保ち、シーム溶接によってシールリングと蓋との気密を保つことで内部に搭載した電子部品と外気とを遮断できることが知られている（たとえば、特許文献１参照）。
特開２００３−６８９０１号公報 As a conventional hermetically sealed package, a metal base and a carrier substrate for mounting an electronic component composed only of ceramic layers or multi-layer ceramics laminated on the base, and surrounding the electronic component on the ceramic There is a hermetic sealing package including a conductor layer formed as described above, a metal seal ring brazed to the conductor layer using a brazing material, and a metal lid welded to the seal ring. This hermetic package is known to keep the carrier board and seal ring hermetic by brazing, and to keep the seal ring and lid hermetically sealed by seam welding, thereby blocking the electronic components mounted inside and the outside air. (For example, refer to Patent Document 1).
JP 2003-68901 A

上記特許文献１では、シールリングをろう付けするためのろう材にＡｇを用いている。しかし、Ａｇろうのような高融点のろう材を用いると、シールリング、ろう材、セラミックの線膨張係数が異なるため、ろう付け時にろう材の凝固温度から室温に戻る際に生じる熱応力によって、セラミック上に形成されたろう付け用の導体層に剥離が生じたり、セラミックが割れる問題がある。   In the said patent document 1, Ag is used for the brazing material for brazing a seal ring. However, when a high melting point brazing material such as Ag brazing is used, the linear expansion coefficients of the seal ring, brazing material, and ceramic are different. Therefore, due to the thermal stress that occurs when the brazing material returns to room temperature during brazing, There is a problem that the conductor layer for brazing formed on the ceramic is peeled off or the ceramic is broken.

また、ろう付けするためのろう材にはＡｇ以外に、Ａｕ系はんだのように融点の高いものやＳｎ-Ｐｂ系はんだやＳｕ−Ａｇ系はんだ等のように融点の低いものが一般的に用いられる。   In addition to Ag, brazing material for brazing generally uses a material having a high melting point such as Au solder, or a material having a low melting point such as Sn—Pb solder or Su—Ag solder. It is done.

Ａｕ系はんだのように融点の高いものは、ろう材にＡｇを用いた場合と同じ問題がある。一方、Ｓｎ−Ｐｂ系はんだやＳｕ−Ａｇ系はんだ等のように低融点のろう材を用いると前記問題は回避できるが、低融点のろう材を構成する金属とろう付け用の導体層の金属とから脆い化合物が形成されるので、長期信頼性が得られない問題がある。   Those having a high melting point, such as Au solder, have the same problem as when Ag is used for the brazing material. On the other hand, when a low melting point brazing material such as Sn—Pb solder or Su—Ag solder is used, the above problem can be avoided, but the metal constituting the low melting point brazing material and the metal of the conductor layer for brazing Since a brittle compound is formed from the above, there is a problem that long-term reliability cannot be obtained.

一般的に、電子部品とセラミック層に形成された配線とはボンディングワイヤで接続され、ワイヤの接続信頼性を向上させるためにセラミック層の表面が露出した導体の最表面にはたとえばＡｕめっきが形成されている。このＡｕめっきが薄い場合には、ボンディングワイヤの接続信頼性が低下するという問題がある。Ａｕめっきが厚い場合には、Ａｕとはんだ中の低融点のＳｎとが反応してしまう。そのため、脆弱な化合物を形成してはんだの機械的特性が劣化し、長期使用中にはんだにクラックが生じる問題がある。はんだの量を増やすことにより、はんだ中の化合物の相対量を低減してはんだの機械的特性の劣化を防止できる。しかし、シールリングへのはんだの這い上がり量が増加し、蓋を溶接する際にはんだが再溶融して溶接部まで到達し、シールリングと蓋との気密性を損なう問題がある。   In general, electronic components and wiring formed in the ceramic layer are connected by bonding wires, and for example, Au plating is formed on the outermost surface of the conductor where the surface of the ceramic layer is exposed in order to improve the connection reliability of the wires Has been. When the Au plating is thin, there is a problem that the connection reliability of the bonding wire is lowered. When the Au plating is thick, Au reacts with Sn having a low melting point in the solder. Therefore, there is a problem that a brittle compound is formed, the mechanical properties of the solder are deteriorated, and the solder is cracked during long-term use. By increasing the amount of solder, the relative amount of the compound in the solder can be reduced and deterioration of the mechanical properties of the solder can be prevented. However, the amount of solder creeping up on the seal ring is increased, and when the lid is welded, the solder is remelted and reaches the welded portion, thereby causing a problem of impairing the airtightness between the seal ring and the lid.

この発明は、上記のような課題を解決するためになされたものであり、本発明の目的は、気密の信頼性を向上することが可能な気密封止パッケージおよびその製造方法を提供することである。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a hermetic sealed package capable of improving hermetic reliability and a method for manufacturing the same. is there.

この発明にしたがった気密封止パッケージは、内側に電子部品を収納するものである。その気密封止パッケージは、パッケージ本体と、第１の封止部材と、第２の封止部材と、カバー部材とを備える。第１の封止部材は、パッケージ本体と接着される。第２の封止部材は、第１の封止部材の融点よりも低い融点であり、第１の封止部材と接着される。カバー部材は、第２の封止部材により第１の封止部材と接合される。   The hermetically sealed package according to the present invention accommodates electronic components inside. The hermetically sealed package includes a package body, a first sealing member, a second sealing member, and a cover member. The first sealing member is bonded to the package body. The second sealing member has a melting point lower than the melting point of the first sealing member, and is bonded to the first sealing member. The cover member is joined to the first sealing member by the second sealing member.

また、この発明にしたがった気密封止パッケージの製造方法は、内側に電子部品を収納する気密封止パッケージの製造方法である。その気密封止パッケージの製造方法は、パッケージ本体の表面に第１の封止部材を固着する工程と、第１の封止部材の上に配置する工程と、第２の封止部材とカバー部材とを溶着する工程とを備える。第１の封止部材の上に配置する工程は、第１の封止部材の融点よりも低い融点の第２の封止部材を、第１の封止部材の上に配置する。第２の封止部材とカバー部材とを溶着する工程は、第２の封止部材の上にカバー部材を配置して、第１の封止部材の融点より低い温度で第２の封止部材を熱処理することにより第２の封止部材を溶融凝固させることによって、第２の封止部材とカバー部材とを溶着する。   Moreover, the manufacturing method of the airtight sealing package according to this invention is a manufacturing method of the airtight sealing package which accommodates an electronic component inside. The method for manufacturing the hermetically sealed package includes a step of fixing the first sealing member to the surface of the package body, a step of disposing the first sealing member on the first sealing member, a second sealing member, and a cover member. And a step of welding. In the step of disposing on the first sealing member, a second sealing member having a melting point lower than that of the first sealing member is disposed on the first sealing member. In the step of welding the second sealing member and the cover member, the cover member is disposed on the second sealing member, and the second sealing member is at a temperature lower than the melting point of the first sealing member. The second sealing member and the cover member are welded by melting and solidifying the second sealing member by heat-treating.

このように、本発明の気密封止パッケージによれば、融点の高い第１の封止部材と融点の低い第２の封止部材とにより、パッケージ本体とカバー部材とを封止している。そのため、相対的に高融点の第１の封止部材をパッケージ本体の表面に固着するので、封止部材として全て低融点のろう材を用いる場合と比較して封止部材全体としては脆弱な化合物の割合を減らすことができる。また、相対的に低融点の第２の封止部材を用いるので、ろう付け後に発生する熱応力を小さくできることによって、クラックの防止等ができる。よって、気密の信頼性を向上することが可能となる。   Thus, according to the hermetic sealing package of the present invention, the package body and the cover member are sealed by the first sealing member having a high melting point and the second sealing member having a low melting point. Therefore, since the first sealing member having a relatively high melting point is fixed to the surface of the package body, the entire sealing member is fragile as compared to the case where a low melting point brazing material is used as the sealing member. The ratio of can be reduced. In addition, since the second sealing member having a relatively low melting point is used, cracks can be prevented by reducing the thermal stress generated after brazing. Therefore, it is possible to improve airtight reliability.

また、本発明の気密封止パッケージの製造方法によれば、第１の封止部材の融点より低い温度で第２の封止部材を熱処理することにより、第１の封止部材は完全には液化しない。そのため、封止部材の過度な這い上がりが生じないので、パッケージ本体とカバー部材との溶接性を損なわない。よって、気密の信頼性を向上することが可能となる。   In addition, according to the method for manufacturing the hermetic sealing package of the present invention, the first sealing member is completely heated by heat-treating the second sealing member at a temperature lower than the melting point of the first sealing member. Does not liquefy. For this reason, an excessive scooping of the sealing member does not occur, so that the weldability between the package body and the cover member is not impaired. Therefore, it is possible to improve airtight reliability.

以下、図面に基づいて本発明の実施の形態を説明する。なお、以下の図面において同一または相当する部分には同一の参照符号を付し、その説明は繰り返さない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

図１は、本実施の形態における気密封止パッケージを示す断面図である。図１を参照して、本実施の形態における気密封止パッケージを説明する。本実施の形態における気密封止パッケージ２０は、たとえば、図１に示すように、パッケージ本体１と、第１の封止部材７と、第２の封止部材１１とカバー部材１９とを備える。第１の封止部材７は、パッケージ本体１と接着される。第２の封止部材１１は、第１の封止部材７の融点よりも低い融点を有する材料からなり、第１の封止部材７と接着される。カバー部材１９は、第２の封止部材１１により第１の封止部材７と接合される。   FIG. 1 is a cross-sectional view showing a hermetically sealed package in the present embodiment. With reference to FIG. 1, the hermetic sealing package in this Embodiment is demonstrated. The hermetic sealing package 20 in the present embodiment includes, for example, a package body 1, a first sealing member 7, a second sealing member 11, and a cover member 19, as shown in FIG. The first sealing member 7 is bonded to the package body 1. The second sealing member 11 is made of a material having a melting point lower than that of the first sealing member 7 and is bonded to the first sealing member 7. The cover member 19 is joined to the first sealing member 7 by the second sealing member 11.

詳細には、パッケージ本体１は、ベース部１ａと、キャビティ部１ｂとを含んでいる。ベース部１ａとキャビティ部１ｂとにより凹部が形成されている。この凹部には電子部品の一例として半導体素子１２および配線基板１３が搭載されている。半導体素子１２は電極１２ａを有している。配線基板１３は配線１３ａを有している。配線１３ａ間、配線１３ａと電極１２ａ間、および電極１２ａ間は、ボンディングワイヤ１４により接続されている。   Specifically, the package body 1 includes a base portion 1a and a cavity portion 1b. A concave portion is formed by the base portion 1a and the cavity portion 1b. A semiconductor element 12 and a wiring board 13 are mounted in the recess as an example of an electronic component. The semiconductor element 12 has an electrode 12a. The wiring board 13 has wiring 13a. Bonding wires 14 connect the wirings 13a, the wirings 13a and the electrodes 12a, and the electrodes 12a.

また、ベース部１ａの上表面には、信号線路３が設けられている。信号線路３は、ボンディングワイヤ１４と電気的に接続されている。ベース部１ａと半導体素子１２との間には、接地電極２が設けられている。また、ベース部１ａの下表面にも、接地電極２が設けられている。ベース部１ａの上方の接地電極２と下表面の接地電極２とは、導電性のビアホール４およびランド５を介して電気的に接続されている。   A signal line 3 is provided on the upper surface of the base portion 1a. The signal line 3 is electrically connected to the bonding wire 14. A ground electrode 2 is provided between the base portion 1 a and the semiconductor element 12. A ground electrode 2 is also provided on the lower surface of the base portion 1a. The ground electrode 2 above the base portion 1 a and the ground electrode 2 on the lower surface are electrically connected through a conductive via hole 4 and a land 5.

カバー部材１９は、シールリング８と、蓋１５とを含んでいる。パッケージ本体１の凹部の開口は、蓋１５により覆われている。   The cover member 19 includes the seal ring 8 and the lid 15. The opening of the recess of the package body 1 is covered with a lid 15.

キャビティ部１ｂの上部は、導体層６により構成されている。導体層６の上には、第１の封止部材７が設けられている。第１の封止部材７の上には、シールリング８が設けられている。第１の封止部材７とシールリング８とを第２の封止部材１１が機械的に接合している。キャビティ部１ｂの導体層６とシールリング８との隙間は、第１の封止部材７および第２の封止部材１１とによって塞がれている。   The upper part of the cavity portion 1b is constituted by the conductor layer 6. A first sealing member 7 is provided on the conductor layer 6. A seal ring 8 is provided on the first sealing member 7. A second sealing member 11 mechanically joins the first sealing member 7 and the seal ring 8. A gap between the conductor layer 6 and the seal ring 8 in the cavity portion 1 b is closed by the first sealing member 7 and the second sealing member 11.

半導体素子１２は、ベース部１ａ、キャビティ部１ｂ、第１の封止部材７、第２の封止部材１１、シールリング８、および蓋１５によって囲まれた空間内に存在している。そのため、半導体素子１２は、外気から隔離されている。   The semiconductor element 12 exists in a space surrounded by the base portion 1 a, the cavity portion 1 b, the first sealing member 7, the second sealing member 11, the seal ring 8, and the lid 15. Therefore, the semiconductor element 12 is isolated from the outside air.

次に、気密封止パッケージ２０の仕様について説明する。ベース部１ａおよびキャビティ部１ｂのそれぞれは、ＬＴＣＣ（低温焼成セラミックス：Low Temperature Co-fired Ceramics）で形成されている。ベース部１ａの寸法は、３４ｍｍ×１７．５ｍｍである。キャビティ部１ｂの寸法は、外径が２８ｍｍ×１７．５ｍｍであり、かつ、内径が２４ｍｍ×１３．５ｍｍである。なお、キャビティ部１ｂの平面形状の外形が四角形の環状である。   Next, the specification of the hermetic sealing package 20 will be described. Each of the base part 1a and the cavity part 1b is formed of LTCC (Low Temperature Co-fired Ceramics). The dimension of the base part 1a is 34 mm x 17.5 mm. The dimensions of the cavity portion 1b are an outer diameter of 28 mm × 17.5 mm and an inner diameter of 24 mm × 13.5 mm. The outer shape of the planar shape of the cavity portion 1b is a quadrangular ring.

導体層６の寸法は、外径が２８ｍｍ×１７．５ｍｍであり、かつ、内径が２４ｍｍ×１３．５ｍｍである。また、材質はＡｇであり、その表面上に厚さ２μｍ〜５μｍのＮｉめっきとＮｉめっきの上に厚さ０．６μｍ〜０．９μｍのＡｕめっきが形成されている。   The conductor layer 6 has an outer diameter of 28 mm × 17.5 mm and an inner diameter of 24 mm × 13.5 mm. Further, the material is Ag, and Ni plating with a thickness of 2 μm to 5 μm is formed on the surface thereof, and Au plating with a thickness of 0.6 μm to 0.9 μm is formed on the Ni plating.

第１の封止部材７は、Ａｕを含まない材料からなる。気密封止パッケージ２０における第１の封止部材７は、たとえば、Ｓｎ、Ｐｂ、およびＳｂからなり液相線が２４６℃のペースト状のはんだを用いている。なお、第１の封止部材７の材料は、特にこれに限定されず、たとえば、Ｓｎ、Ｓｎ−Ｐｂ系、Ｓｎ−Ａｇ系、Ｓｎ−Ａｇ−Ｃｕ系、Ｓｎ−Ｓｂ系等の材料を用いることもできる。また、第１の封止部材７は、第２の封止部材１１の融点よりも高い融点の材料であれば、特に限定されないが、融点が２００℃以上３００℃以下の材料を用いることが好ましい。この温度の範囲内であれば、パッケージ本体１との接着性が損なわれないからである。２００℃よりも低いと、シールリング８をろう付けする時に溶融する危険が生じるからである。一方、３００℃よりも高いと、ＮｉめっきがＡｕめっき表面まで拡散あるいはＡｕめっきに溶け込んで、ろう付け性やワイヤボンディング性が劣化する危険が生じるからである。   The first sealing member 7 is made of a material that does not contain Au. The first sealing member 7 in the hermetic sealing package 20 is made of, for example, paste solder composed of Sn, Pb, and Sb and having a liquidus of 246 ° C. In addition, the material of the 1st sealing member 7 is not specifically limited to this, For example, materials, such as Sn, Sn-Pb type | system | group, Sn-Ag type | system | group, Sn-Ag-Cu type | system | group, Sn-Sb type | system | group, are used. You can also. The first sealing member 7 is not particularly limited as long as it has a melting point higher than that of the second sealing member 11, but it is preferable to use a material having a melting point of 200 ° C. or higher and 300 ° C. or lower. . This is because the adhesiveness with the package body 1 is not impaired within this temperature range. This is because if it is lower than 200 ° C., there is a risk of melting when the seal ring 8 is brazed. On the other hand, when the temperature is higher than 300 ° C., the Ni plating diffuses to the Au plating surface or dissolves in the Au plating, and there is a risk that the brazing property and the wire bonding property are deteriorated.

第２の封止部材１１は、Ｓｎ、またはＳｎにＰｂ、Ａｇ、Ｃｕ、Ｚｎ、Ｂｉ、およびＩｎのうちの少なくとも１つが添加されている材料からなる。気密封止パッケージ２０における第２の封止部材１１は、たとえば、ＳｎとＰｂからなり液相線が１８３℃のペースト状のはんだを用いている。なお、第２の封止部材１１の材料は、特にこれに限定されず、たとえば、Ｓｎ、Ｓｎ−Ｐｂ系、Ｓｎ−Ａｇ系、Ｓｎ−Ａｇ−Ｃｕ系、Ｓｎ−Ｓｂ系等の材料を用いることもできる。また、第２の封止部材１１は、第１の封止部材１１の融点よりも低い融点の材料であれば、特に限定されないが、融点が１８０℃以上２２０℃以下の材料を用いることが好ましい。融点が２２０℃よりも高いと、応力が発生してクラックが生じる場合があるからである。融点が１８０℃未満の材料は、低温での機械的特性が劣る、酸化されやすい、または高価である等の問題があるからである。   The second sealing member 11 is made of Sn or a material in which at least one of Pb, Ag, Cu, Zn, Bi, and In is added to Sn. The second sealing member 11 in the hermetic sealing package 20 is made of, for example, paste solder composed of Sn and Pb and having a liquidus of 183 ° C. Note that the material of the second sealing member 11 is not particularly limited to this, and for example, a material such as Sn, Sn—Pb, Sn—Ag, Sn—Ag—Cu, or Sn—Sb is used. You can also. The second sealing member 11 is not particularly limited as long as it is a material having a melting point lower than the melting point of the first sealing member 11, but a material having a melting point of 180 ° C. or higher and 220 ° C. or lower is preferably used. . This is because if the melting point is higher than 220 ° C., stress may be generated to cause cracks. This is because a material having a melting point of less than 180 ° C. has problems such as inferior mechanical properties at low temperatures, easily oxidized, or expensive.

シールリング８の寸法は、外径が２７ｍｍ×１６．５ｍｍであり、かつ、内径が２５ｍｍ×１４．５ｍｍである。また、材料は、ＦｅとＮｉとＣｏとからなる合金（コバール）を用いており、コバールからなるシールリング８の表面に、ＮｉめっきとＡｕめっきを形成している。   The dimensions of the seal ring 8 are an outer diameter of 27 mm × 16.5 mm and an inner diameter of 25 mm × 14.5 mm. In addition, an alloy (Kovar) made of Fe, Ni and Co is used as the material, and Ni plating and Au plating are formed on the surface of the seal ring 8 made of Kovar.

蓋１５の材料は、ＦｅとＮｉとＣｏからなる合金（コバール）を用いており、コバールからなる蓋１５の表面上にＮｉめっきとＡｕめっきを形成している。   The material of the lid 15 is an alloy (Kovar) made of Fe, Ni, and Co, and Ni plating and Au plating are formed on the surface of the lid 15 made of Kovar.

次に、図１〜図６を用いて、本実施の形態の気密封止パッケージの製造方法について説明する。図２は、本実施の形態の気密封止パッケージ２０の製造方法を示すフローチャートである。図３は、パッケージ本体１の表面に第１の封止部材７が固着された後の状態を示す断面図である。図４（Ａ）は、シールリング８のＡｕめっき８ｂを一部除去する方法を示す概略断面図であり、図４（Ｂ）は、図４（Ａ）における領域Ａを示す拡大断面図であり、図４（Ｃ）は、Ａｕめっき８ｂを一部除去した後の状態を示すシールリング８の部分断面図である。図５（Ａ）は、第２の封止部材１１を第１の封止部材７の上に配置した後の状態を示す断面図であり、図５（Ｂ）は、図５（Ａ）における領域Ｂを示す拡大断面図である。図６（Ａ）は、第２の封止部材１１とシールリング８とを溶着させた後の状態を示す断面図であり、図６（Ｂ）は、図６（Ａ）における領域Ｃを示す拡大断面図である。   Next, the manufacturing method of the hermetic sealing package of this Embodiment is demonstrated using FIGS. FIG. 2 is a flowchart showing a method for manufacturing the hermetic sealing package 20 of the present embodiment. FIG. 3 is a cross-sectional view showing a state after the first sealing member 7 is fixed to the surface of the package body 1. 4A is a schematic cross-sectional view showing a method of partially removing the Au plating 8b of the seal ring 8, and FIG. 4B is an enlarged cross-sectional view showing a region A in FIG. 4A. FIG. 4C is a partial cross-sectional view of the seal ring 8 showing a state after a part of the Au plating 8b is removed. FIG. 5A is a cross-sectional view showing a state after the second sealing member 11 is disposed on the first sealing member 7, and FIG. 5B is a view in FIG. 3 is an enlarged cross-sectional view showing a region B. FIG. 6A is a cross-sectional view showing a state after the second sealing member 11 and the seal ring 8 are welded, and FIG. 6B shows a region C in FIG. 6A. It is an expanded sectional view.

次に、パッケージ本体１の表面に第１の封止部材７を配置する工程（Ｓ２０）を実施する。この工程（Ｓ２０）では、図３に示すように、キャビティ部１ｂの上面に形成された導体層６上に第１の封止部材７を配置している。具体的には、第１の封止部材７としてＳｎとＰｂとＳｂからなり液相線が２４６℃のペースト状のはんだを用い、スクリーン印刷によって導体層６の上に配置する。   Next, the process (S20) which arrange | positions the 1st sealing member 7 on the surface of the package main body 1 is implemented. In this step (S20), as shown in FIG. 3, the first sealing member 7 is disposed on the conductor layer 6 formed on the upper surface of the cavity portion 1b. Specifically, a paste solder composed of Sn, Pb, and Sb and having a liquidus of 246 ° C. is used as the first sealing member 7 and is disposed on the conductor layer 6 by screen printing.

そして、パッケージ本体１の表面に第１の封止部材７を固着する工程（Ｓ３０）を実施する。この工程（Ｓ３０）では、図３に示すように、導体層６の上に配置された第１の封止部材７を２６０℃まで加熱して溶融させ、導体層６の上で凝固させる。これにより、パッケージ本体１と第１の封止部材７とが固着する。   And the process (S30) which adheres the 1st sealing member 7 to the surface of package body 1 is carried out. In this step (S 30), as shown in FIG. 3, the first sealing member 7 disposed on the conductor layer 6 is heated to 260 ° C. to be melted and solidified on the conductor layer 6. Thereby, the package body 1 and the first sealing member 7 are fixed.

次に、第２の封止部材１１を第１の封止部材７の上に配置する工程（Ｓ４０）を実施する。この工程（Ｓ４０）では、図５（Ａ）に示すように、パッケージ本体１と固着された第１の封止部材７の上に、第２の封止部材１１を配置している。具体的には、ＳｎとＰｂからなり、液相線が１８３℃のペースト状のはんだを用い、スクリーン印刷によって第１の封止部材７の上に配置する。   Next, the process (S40) which arrange | positions the 2nd sealing member 11 on the 1st sealing member 7 is implemented. In this step (S40), as shown in FIG. 5A, the second sealing member 11 is disposed on the first sealing member 7 fixed to the package body 1. Specifically, it is composed of Sn and Pb, and a paste-like solder having a liquidus of 183 ° C. is used and placed on the first sealing member 7 by screen printing.

次いで、第２の封止部材１１の上にシールリング８を配置する工程（Ｓ５０）を実施する。本実施の形態では、シールリング８は、上述したように、ＦｅとＮｉとＣｏからなる合金（コバール）にＮｉめっき８ａとＡｕめっき８ｂとを形成したものを使用している。シールリング８のＡｕめっき８ｂは、後でシールリング８と蓋１５とを溶接する際の溶接性を向上させるために形成している。しかし、Ａｕめっき８ｂを形成している状態のシールリング８を低融点の第２の封止部材１１でろう付けすると、Ａｕめっき８ｂと第２の封止部材１１中のＳｎとが反応して脆弱な化合物を形成し、第２の封止部材１１の機械的特性が劣化する。   Next, a step (S50) of placing the seal ring 8 on the second sealing member 11 is performed. In the present embodiment, as described above, the seal ring 8 is formed by forming an Ni plating 8a and an Au plating 8b on an alloy (Kovar) made of Fe, Ni, and Co. The Au plating 8b of the seal ring 8 is formed in order to improve the weldability when the seal ring 8 and the lid 15 are welded later. However, when the seal ring 8 in the state where the Au plating 8b is formed is brazed with the second sealing member 11 having a low melting point, the Au plating 8b reacts with Sn in the second sealing member 11. A fragile compound is formed, and the mechanical properties of the second sealing member 11 deteriorate.

そこで、本実施の形態では、図４（Ａ）〜（Ｃ）に示すように、シールリング８においてろう付けする箇所のＡｕめっき８ｂをあらかじめ除去している。詳細には、図４（Ａ）に示すように、セラミック板１０にはんだマスク材９（ＴＣ-５２７：ＫＥＳＴＥＲ製）をスクリーン印刷で供給し、シールリング８の一部をはんだマスク材９に埋没させる。その後、はんだマスク材９を８０℃に加熱して硬化させる。図４（Ｂ）に示すように、マスクされたシールリング８を溶融した第２の封止部材１１と同じ組成のはんだ８ｃに浸漬し、はんだマスク材９でマスクされていない箇所のＡｕめっき８ｂを溶融したはんだ中に拡散させて除去する。Ａｕめっき８ｂにおけるはんだマスク材９で保護されていない部分のＡｕめっきを除去した後、はんだマスク材９を除去する。すると、図４（Ｃ）に示すように、シールリング８は、Ｎｉめっき８ａの略半分の表面（図４（Ｃ）において上側）を覆うようにはんだ８ｃが形成され、それ以外の表面（図４（Ｃ）において下側）を覆うようにＡｕめっき８ｂが形成される。   Therefore, in the present embodiment, as shown in FIGS. 4A to 4C, the Au plating 8b at the location to be brazed in the seal ring 8 is removed in advance. Specifically, as shown in FIG. 4A, a solder mask material 9 (TC-527: manufactured by KESTER) is supplied to the ceramic plate 10 by screen printing, and a part of the seal ring 8 is buried in the solder mask material 9. Let Thereafter, the solder mask material 9 is heated to 80 ° C. and cured. As shown in FIG. 4B, the masked seal ring 8 is immersed in the solder 8c having the same composition as the melted second sealing member 11, and the Au plating 8b at a portion not masked by the solder mask material 9 is used. Is diffused and removed in the molten solder. The portion of the Au plating 8b that is not protected by the solder mask material 9 is removed, and then the solder mask material 9 is removed. Then, as shown in FIG. 4 (C), the seal ring 8 is formed with solder 8c so as to cover substantially half of the surface of the Ni plating 8a (upper side in FIG. 4 (C)), and the other surface (FIG. 4). Au plating 8b is formed so as to cover (lower side in 4 (C)).

この工程（Ｓ５０）では、図５（Ｂ）に示すように、上述のようにして得られるシールリング８におけるＡｕめっき８ｂが形成されていない面を、第２の封止部材１１の上に配置する。   In this step (S50), as shown in FIG. 5B, the surface of the seal ring 8 obtained as described above where the Au plating 8b is not formed is disposed on the second sealing member 11. To do.

次に、熱処理をすることにより第２の封止部材１１とシールリング８とを溶着する工程（Ｓ６０）を実施する。この工程（Ｓ６０）では、第１の封止部材７の融点よりも低く、かつ第２の封止部材１１の融点よりも高い温度で熱処理することにより、第２の封止部材１１を溶融凝固させることによって、第２の封止部材１１とシールリング８とを溶着する。   Next, the process (S60) of welding the 2nd sealing member 11 and the seal ring 8 by heat-processing is implemented. In this step (S60), the second sealing member 11 is melted and solidified by heat treatment at a temperature lower than the melting point of the first sealing member 7 and higher than the melting point of the second sealing member 11. By doing so, the second sealing member 11 and the seal ring 8 are welded together.

詳細には、図６（Ａ）、（Ｂ）に示すように、第２の封止部材１１を２００℃まで加熱して溶融させた後、冷却して凝固させると、シールリング８と第１の封止部材７とが第２の封止部材１１によって溶着される。第１の封止部材の融点が２４６℃であり、第２の封止部材１１の融点が１８３℃であるため、２００℃の熱処理を行なうことにより、第１の封止部材７が完全には溶融せずに第２の封止部材１１のみが溶融する。そのため、熱処理により第２の封止部材１１のみが溶融してシールリング８の表面に適度に這い上がりが生じ、シールリング８と第１の封止部材７とを第２の封止部材１１によって溶着することができる。   Specifically, as shown in FIGS. 6A and 6B, when the second sealing member 11 is heated to 200 ° C. and melted, and then cooled and solidified, the seal ring 8 and the first The sealing member 7 is welded by the second sealing member 11. Since the melting point of the first sealing member is 246 ° C. and the melting point of the second sealing member 11 is 183 ° C., the first sealing member 7 is completely removed by performing the heat treatment at 200 ° C. Only the second sealing member 11 is melted without melting. For this reason, only the second sealing member 11 is melted by the heat treatment, and the surface of the seal ring 8 is moderately raised, so that the seal ring 8 and the first sealing member 7 are separated by the second sealing member 11. Can be welded.

この工程（Ｓ６０）を実施することにより、第２の封止部材１１は１８３℃と低温で凝固するため、冷却時の熱応力による導体層６の剥離等やキャビティ部１ｂにクラック等を生じずに、溶着できる。また、あらかじめ第１の封止部材７をパッケージ本体１に供給し、上記工程（Ｓ６０）では第１の封止部材７は溶融しないので、第２の封止部材１１の供給量が少なくても、導体層６の最表面のＡｕめっきに起因して形成される脆弱な化合物の量は、第１の封止部材７および第２の封止部材１１の総量に対して相対的に少なくなる。そのため、封止部材全体の機械的特性の劣化を防止して溶着できる。さらに、シールリング８と第２の封止部材１１との溶着時に、第１の封止部材７は完全には液化しないため、シールリング８へのろう材の過度の這い上がりを防止して溶着できる。   By carrying out this step (S60), the second sealing member 11 is solidified at a low temperature of 183 ° C., so that the conductor layer 6 is not peeled off due to thermal stress during cooling, or cracks or the like are not generated in the cavity portion 1b. It can be welded. In addition, since the first sealing member 7 is supplied to the package body 1 in advance and the first sealing member 7 is not melted in the step (S60), even if the supply amount of the second sealing member 11 is small. The amount of the fragile compound formed due to the Au plating on the outermost surface of the conductor layer 6 is relatively small with respect to the total amount of the first sealing member 7 and the second sealing member 11. Therefore, it can weld by preventing the deterioration of the mechanical characteristics of the whole sealing member. Furthermore, since the first sealing member 7 is not completely liquefied when the seal ring 8 and the second sealing member 11 are welded, it is possible to prevent excessive brazing of the brazing material to the seal ring 8 and weld it. it can.

その後、シールリング８の上に蓋１５を接続する工程（Ｓ７０）を実施する。この工程（Ｓ７０）は、シールリング８と蓋１５とをＮ2雰囲気下でシーム溶接している。なお、シールリング８のＡｕめっき８ｂは、シールリング８と蓋１５とを溶接する際の溶接性を向上させるために形成している。 Then, the process (S70) of connecting the lid | cover 15 on the seal ring 8 is implemented. In this step (S70), the seal ring 8 and the lid 15 are seam welded in an N 2 atmosphere. The Au plating 8b of the seal ring 8 is formed in order to improve weldability when the seal ring 8 and the lid 15 are welded.

なお、気密封止パッケージ２０は、電子部品を搭載する。詳細には、半導体素子１２および配線基板１３は、導電性接着剤を用いて接地電極２に固定される。また、半導体素子１２および配線基板１３は、それぞれ直径φが２５μｍであるＡｕワイヤ（ボンディングワイヤ１４）を用いて接続される。   The hermetic sealing package 20 mounts electronic components. Specifically, the semiconductor element 12 and the wiring board 13 are fixed to the ground electrode 2 using a conductive adhesive. The semiconductor element 12 and the wiring board 13 are connected using Au wires (bonding wires 14) each having a diameter φ of 25 μm.

上記の工程を実施することにより、パッケージ本体１を気密封止し、半導体素子１２および配線基板１３を外気と遮断することができる。その結果、本実施の形態における気密封止パッケージの製造方法により製造される気密封止パッケージ２０は、カバー部材１９とパッケージ本体１との溶接性を損なうことなく、初期、長期にわたって気密信頼性を得ることが可能となる。   By performing the above steps, the package body 1 can be hermetically sealed, and the semiconductor element 12 and the wiring board 13 can be shut off from the outside air. As a result, the hermetic sealed package 20 manufactured by the method of manufacturing the hermetic sealed package in the present embodiment has hermetic reliability over the initial and long term without impairing the weldability between the cover member 19 and the package body 1. Can be obtained.

次に、本実施の形態における気密封止パッケージ２０の信頼性を確認するために次のような実験を行なっている。図７は、気密封止パッケージ２０の信頼性を確認するための実験装置の概略断面図を示す。   Next, the following experiment is performed in order to confirm the reliability of the hermetic sealing package 20 in the present embodiment. FIG. 7 shows a schematic cross-sectional view of an experimental apparatus for confirming the reliability of the hermetic sealed package 20.

図７を参照して、実験装置は、真空吸着ステージ１７の上にゴム板１６を設置し、その上に蓋１５を溶接していないパッケージを設置して真空吸着し、真空吸着穴１８の先にＨｅディテクタを設けている。シールリング８の近傍にＨｅガスを吹き付けると、上記パッケージに気密不良がある場合には、パッケージの内部にＨｅガスが侵入する。そして、真空吸着穴１８から当該Ｈｅガスが排出され、ディテクタでＨｅが検出される。   Referring to FIG. 7, in the experimental apparatus, a rubber plate 16 is installed on a vacuum suction stage 17, a package without a lid 15 is installed on the rubber plate 16, and vacuum suction is performed. He detector is provided. When He gas is blown in the vicinity of the seal ring 8, if the package has an airtight defect, the He gas enters the inside of the package. And the said He gas is discharged | emitted from the vacuum suction hole 18, and He is detected with a detector.

まず、本発明の範囲外である、外径が２７．８ｍｍ×１７．３ｍｍであり、かつ、内径が２３．８ｍｍ×１３．３ｍｍであり、かつ、厚さが０．０５ｍｍのＡｕとＳｕからなり液相線が２８３℃のはんだのみを用いてシールリングをろう付けしたパッケージと、ＳｎとＰｂからなる液相線が１８３℃のペースト状のはんだのみを０．０７ｇ〜０．１０ｇ印刷してシールリングをろう付けしたパッケージとを作製した。   First, out of the scope of the present invention, from Au and Su having an outer diameter of 27.8 mm × 17.3 mm, an inner diameter of 23.8 mm × 13.3 mm, and a thickness of 0.05 mm A package in which a seal ring is brazed using only solder having a liquidus of 283 ° C. and 0.07 g to 0.10 g of only paste-like solder having a liquid phase of 183 ° C. of Sn and Pb are printed. A package with a seal ring brazed was produced.

一方、本発明の範囲内であるＳｎとＰｂとＳｂからなり液相線が２４６℃のペースト状のはんだからなる第１の封止部材７を０．１５ｇ〜０．１８ｇ印刷して溶融凝固させた後で、その上にＳｎとＰｂからなり液相線が１８３℃のペースト状のはんだからなる第２の封止部材１１を０．０７ｇ〜０．１０ｇ印刷してシールリングをろう付けしたパッケージを作製した。   Meanwhile, 0.15 g to 0.18 g of the first sealing member 7 made of paste solder composed of Sn, Pb, and Sb and having a liquidus of 246 ° C. within the scope of the present invention is printed and melted and solidified. After that, 0.07 g to 0.10 g of the second sealing member 11 made of paste solder composed of Sn and Pb and having a liquidus of 183 ° C. is printed thereon and brazed to the seal ring. Was made.

次に、上述した実験装置により、それぞれのパッケージについてＨｅのリークを測定した。その結果、ＡｕとＳｎからなるはんだのみでろう付けしたパッケージでは、Ｈｅを吹き付ける前のディテクタの値が０．４×１０-9（ａｔｍ・ｃｃ／ｓ）〜０．８×１０-9（ａｔｍ・ｃｃ／ｓ）に対して、Ｈｅを吹き付けると１．０×１０-8（ａｔｍ・ｃｃ／ｓ）以上に上昇した。また、パッケージの外観を観察すると、導体層の下部にクラックが認められた。 Next, the leakage of He was measured for each package using the experimental apparatus described above. As a result, in the package brazed with only the solder composed of Au and Sn, the detector value before spraying He is 0.4 × 10 −9 (atm · cc / s) to 0.8 × 10 −9 (atm).・ When He was sprayed against (cc / s), the value increased to 1.0 × 10 −8 (atm · cc / s) or more. Moreover, when the external appearance of the package was observed, a crack was recognized at the lower part of the conductor layer.

また、ＳｎとＰｂからなり液相線が１８３℃のペースト状のはんだのみでろう付けしたパッケージでは、ろう付け直後はＨｅ吹き付けの前後ともにディテクタの値は０．４×１０-9（ａｔｍ・ｃｃ／ｓ）〜０．８×１０-9（ａｔｍ・ｃｃ／ｓ）であった。また、−４０℃〜８５℃の温度サイクルを５００サイクル加えた後で測定すると、Ｈｅを吹き付ける前のディテクタの値が０．４×１０-9（ａｔｍ・ｃｃ／ｓ）〜０．８×１０×１０-9（ａｔｍ・ｃｃ／ｓ）に対して、Ｈｅを吹き付けると６．２×１０×１０-9（ａｔｍ・ｃｃ／ｓ）以上に上昇した。なお、はんだの印刷量を増やすとシールリングへのろう付け時のはんだの這い上がりも増して、蓋のシーム溶接時にはんだが再溶融して溶接部まで到達する不具合が多発した。 Further, in a package made of Sn and Pb and brazed with only paste solder having a liquidus of 183 ° C., the detector value is 0.4 × 10 −9 (atm · cc) immediately before and after He spraying. / S) to 0.8 × 10 −9 (atm · cc / s). Further, when 500 cycles of a temperature cycle of −40 ° C. to 85 ° C. are measured, the value of the detector before He is sprayed is 0.4 × 10 −9 (atm · cc / s) to 0.8 × 10. respect × 10 -9 (atm · cc / s), it rises above the blow He 6.2 × 10 × 10 -9 ( atm · cc / s). Increasing the amount of solder printed increased the amount of solder creeping when brazed to the seal ring, resulting in frequent problems that the solder remelted and reached the weld during seam welding of the lid.

一方、ＳｎとＰｂとＳｂからなり液相線が２４６℃のペースト状のはんだからなる第一の封止部材とＳｎとＰｂからなり液相線が１８３℃のペースト状のはんだからなる第２の封止部材１１でろう付け（封止）したパッケージでは、ろう付け直後においても、−４０℃〜８５℃の温度サイクルを５００サイクル加えた後においても、Ｈｅ吹き付けの前後でディテクタの値は０．４×１０-9（ａｔｍ・ｃｃ／ｓ）〜０．８×１０-9（ａｔｍ・ｃｃ／ｓ）と変化せず、気密が保たれていることが確認できた。 On the other hand, a first sealing member made of paste solder composed of Sn, Pb, and Sb and having a liquidus of 246 ° C., and a second sealing member made of paste solder consisting of Sn and Pb, and having a liquidus of 183 ° C. In the package brazed (sealed) with the sealing member 11, the value of the detector before and after the He spraying was 0, either immediately after brazing or after 500 cycles of a temperature cycle of −40 ° C. to 85 ° C. were applied. It was confirmed that the airtightness was maintained without changing from 4 × 10 −9 (atm · cc / s) to 0.8 × 10 −9 (atm · cc / s).

以上説明したように、本発明の実施の形態による気密封止パッケージは、内側に電子部品を収納する気密封止パッケージ２０であって、パッケージ本体１と、パッケージ本体１と接着される第１の封止部材７と、第１の封止部材７の融点よりも低い融点であり、第１の封止部材７と接着される第２の封止部材１１と、第２の封止部材１１により第１の封止部材７と接合されるカバー部材１９とを備えている。そのため、融点の高い第１の封止部材７と融点の低い第２の封止部材１１とにより、パッケージ本体とカバー部材とを封止している。その結果、相対的に高融点の第１の封止部材７をパッケージ本体１の表面に固着するので、封止部材として全て低融点のろう材を用いる場合と比較して封止部材全体としては脆弱な化合物の割合を減らすことができる。また、相対的に低融点の第２の封止部材１１を用いるので、ろう付け後に発生する熱応力を小さくできることによって、クラックの防止等ができる。よって、気密の信頼性を向上することが可能となる。   As described above, the hermetic sealed package according to the embodiment of the present invention is the hermetic sealed package 20 in which electronic components are accommodated inside, and the package main body 1 and the first bonded to the package main body 1 are the first. The second sealing member 11, which has a melting point lower than the melting point of the sealing member 7 and the first sealing member 7, and is bonded to the first sealing member 7, and the second sealing member 11 The cover member 19 joined with the 1st sealing member 7 is provided. Therefore, the package body and the cover member are sealed by the first sealing member 7 having a high melting point and the second sealing member 11 having a low melting point. As a result, since the first sealing member 7 having a relatively high melting point is fixed to the surface of the package body 1, the entire sealing member is compared with a case where a low melting point brazing material is used as the sealing member. The proportion of fragile compounds can be reduced. Further, since the second sealing member 11 having a relatively low melting point is used, cracks can be prevented by reducing the thermal stress generated after brazing. Therefore, it is possible to improve airtight reliability.

また、カバー部材１９が、シールリング８と蓋１５とを含んでいることが好ましい。これにより、パッケージ本体１とシールリング８とを第１の封止部材７および第２の封止部材１１とにより接続し、シールリング８と蓋１５とを接続する。よって、カバー部材１９の構成の自由度を大きくすることが可能となる。   The cover member 19 preferably includes the seal ring 8 and the lid 15. As a result, the package body 1 and the seal ring 8 are connected by the first sealing member 7 and the second sealing member 11, and the seal ring 8 and the lid 15 are connected. Therefore, it is possible to increase the degree of freedom of the configuration of the cover member 19.

また、第１の封止部材７は、Ａｕを含まない材料からなることが好ましい。これにより、第１の封止部材７は、Ａｕが反応することによる脆弱な化合物を形成することがない。よって、気密の長期信頼性の低下を防止できる。   Moreover, it is preferable that the 1st sealing member 7 consists of a material which does not contain Au. Thereby, the 1st sealing member 7 does not form a weak compound by Au reacting. Therefore, it is possible to prevent a decrease in airtight long-term reliability.

また、第２の封止部材１１がＳｎ、またはＳｎにＰｂ、Ａｇ、Ｃｕ、Ｚｎ、Ｂｉ、およびＩｎのうちの少なくとも１つが添加されている材料からなることが好ましい。これにより、第２の封止部材１１の融点を２２０℃以下と低くすることができる。よって、シールリング８のろう付け時の導体層６の剥離やパッケージ本体１のクラック等を防止することができる。   The second sealing member 11 is preferably made of Sn or a material in which at least one of Pb, Ag, Cu, Zn, Bi, and In is added to Sn. Thereby, melting | fusing point of the 2nd sealing member 11 can be made low as 220 degrees C or less. Therefore, peeling of the conductor layer 6 and cracking of the package body 1 when the seal ring 8 is brazed can be prevented.

また、パッケージ本体１がセラミック基板を含み、セラミック基板が低温焼成セラミックス（ＬＴＣＣ）であることが好ましい。これにより、低抵抗の導体を形成でき、電気性能を改善することができる。また、積層数に制限が無いため、多層化により気密封止パッケージの小型化が可能となる。   Moreover, it is preferable that the package body 1 includes a ceramic substrate, and the ceramic substrate is a low-temperature fired ceramic (LTCC). Thereby, a low-resistance conductor can be formed and electrical performance can be improved. Further, since there is no limit on the number of stacked layers, the hermetic sealing package can be reduced in size by multilayering.

さらに、本発明の実施の形態における内側に電子部品を収納する気密封止パッケージ２０の製造方法は、パッケージ本体１の表面に第１の封止部材７を固着する工程（Ｓ３０）と、第１の封止部材７の融点よりも低い融点の第２の封止部材１１を、第１の封止部材７の上に配置する工程（Ｓ４０）と、第２の封止部材１１の上にカバー部材１９を配置して、第１の封止部材７の融点より低い温度で第２の封止部材１１を熱処理することにより第２の封止部材１１を溶融凝固させることによって、第２の封止部材１１とカバー部材１９とを溶着する工程（Ｓ５０〜Ｓ７０）とを備えている。第１の封止部材７の融点より低い温度で第２の封止部材１１を熱処理することにより、第１の封止部材７は完全には液化しない。そのため、封止部材の過度な這い上がりが生じないので、パッケージ本体１とカバー部材１９との溶接性を損なわない。よって、本発明の実施の形態における気密封止パッケージの製造方法によれば、気密の信頼性を向上することが可能となる気密封止パッケージ２０を製造することができる。   Furthermore, the manufacturing method of the hermetic sealed package 20 that houses the electronic components inside the embodiment of the present invention includes the step of fixing the first sealing member 7 to the surface of the package body 1 (S30), A step (S40) of placing the second sealing member 11 having a melting point lower than the melting point of the sealing member 7 on the first sealing member 7, and a cover on the second sealing member 11. The second sealing member 11 is melted and solidified by disposing the member 19 and heat-treating the second sealing member 11 at a temperature lower than the melting point of the first sealing member 7. A step (S50 to S70) of welding the stopper member 11 and the cover member 19 to each other. By heat-treating the second sealing member 11 at a temperature lower than the melting point of the first sealing member 7, the first sealing member 7 is not completely liquefied. Therefore, since the sealing member is not excessively raised, the weldability between the package body 1 and the cover member 19 is not impaired. Therefore, according to the manufacturing method of the hermetic sealed package in the embodiment of the present invention, the hermetic sealed package 20 capable of improving the hermetic reliability can be manufactured.

また、カバー部材１９は、シールリング８と蓋１５とを含み、第２の封止部材１１とカバー部材１９とを溶着する工程は、第２の封止部材１１の上にシールリング８を配置して、熱処理することにより第２の封止部材１１を溶融凝固させることによって、第２の封止部材１１とシールリング８とを溶着する工程（Ｓ５０、Ｓ６０）と、シールリング８の上に蓋１５を接続する工程（Ｓ７０）とを含むことが好ましい。これにより、パッケージ本体１とシールリング８とを第１の封止部材７および第２の封止部材１１とにより封止し、シールリング８と蓋１５とを接続する。よって、気密の信頼性をより向上することが可能となる気密封止パッケージ２０を製造することができる。   Further, the cover member 19 includes the seal ring 8 and the lid 15, and the step of welding the second sealing member 11 and the cover member 19 arranges the seal ring 8 on the second sealing member 11. Then, the second sealing member 11 is melted and solidified by heat treatment to weld the second sealing member 11 and the seal ring 8 (S50, S60), and on the seal ring 8. It is preferable to include a step (S70) of connecting the lid 15. Thereby, the package main body 1 and the seal ring 8 are sealed by the first sealing member 7 and the second sealing member 11, and the seal ring 8 and the lid 15 are connected. Therefore, the hermetic sealed package 20 that can further improve the hermetic reliability can be manufactured.

また、第１の封止部材７は、Ａｕを含まない材料からなることが好ましい。これにより、第１の封止部材７は、脆弱な化合物を形成することがない。よって、第２の封止部材１１の長期信頼性の低下を防止できる気密封止パッケージ２０を製造することができる。   Moreover, it is preferable that the 1st sealing member 7 consists of a material which does not contain Au. Thereby, the 1st sealing member 7 does not form a weak compound. Therefore, the hermetic sealing package 20 that can prevent the long-term reliability of the second sealing member 11 from being lowered can be manufactured.

また、第２の封止部材１１がＳｎ、またはＳｎにＰｂ、Ａｇ、Ｃｕ、Ｚｎ、Ｂｉ、およびＩｎのうちの少なくとも１つが添加されている材料からなることが好ましい。これにより、第２の封止部材１１の融点が２３２℃以下と低くすることができる。よって、シールリング８のろう付け時の導体層６の剥離やパッケージ本体１のクラックが防止できる気密封止パッケージ２０を製造することができる。   The second sealing member 11 is preferably made of Sn or a material in which at least one of Pb, Ag, Cu, Zn, Bi, and In is added to Sn. Thereby, melting | fusing point of the 2nd sealing member 11 can be made low with 232 degrees C or less. Therefore, the hermetically sealed package 20 that can prevent the peeling of the conductor layer 6 and the crack of the package body 1 when the seal ring 8 is brazed can be manufactured.

また、パッケージ本体１がセラミック基板を含み、セラミック基板が低温焼成セラミックス（ＬＴＣＣ）であることが好ましい。これにより、低抵抗の導体が形成でき、電気性能を改善できる気密封止パッケージ２０を製造することができる。また、積層数に制限が無いため、多層化により気密封止パッケージの小型化が可能となる気密封止パッケージ２０を製造することができる。   Moreover, it is preferable that the package body 1 includes a ceramic substrate, and the ceramic substrate is a low-temperature fired ceramic (LTCC). As a result, a hermetic sealed package 20 that can form a low-resistance conductor and can improve electrical performance can be manufactured. Moreover, since there is no restriction | limiting in the number of lamination | stacking, the airtight sealing package 20 which can reduce in size a hermetic sealing package by multilayering can be manufactured.

また、上述した気密封止パッケージの製造方法により、気密封止パッケージが製造されることが好ましい。この製造方法により製造される気密封止パッケージ２０は、気密性の高いものとすることができる。   Further, it is preferable that the hermetic sealed package is manufactured by the above-described manufacturing method of the hermetic sealed package. The hermetic sealing package 20 manufactured by this manufacturing method can be made highly airtight.

今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した実施の形態ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。   The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above-described embodiment but by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

本実施の形態における気密封止パッケージを示す断面図である。It is sectional drawing which shows the airtight sealing package in this Embodiment. 本実施の形態の気密封止パッケージ２０の製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the airtight sealing package 20 of this Embodiment. パッケージ本体の表面に第１の封止部材が固着された後の状態を示す断面図である。It is sectional drawing which shows the state after the 1st sealing member adheres to the surface of a package main body. （Ａ）は、シールリングのＡｕめっきを一部除去する方法を示す概略断面図であり、（Ｂ）は、図４（Ａ）における領域Ａを示す拡大断面図であり、（Ｃ）は、Ａｕめっきを一部除去した後の状態を示すシールリングの部分断面図である。(A) is a schematic sectional view showing a method of partially removing Au plating of the seal ring, (B) is an enlarged sectional view showing a region A in FIG. 4 (A), (C), It is a fragmentary sectional view of the seal ring which shows the state after removing Au plating partially. （Ａ）は、第２の封止部材を第１の封止部材の上に配置した後の状態を示す断面図であり、（Ｂ）は、図５（Ａ）における領域Ｂを示す拡大断面図である。(A) is sectional drawing which shows the state after arrange | positioning a 2nd sealing member on the 1st sealing member, (B) is an expanded cross section which shows the area | region B in FIG. 5 (A). FIG. （Ａ）は、第２の封止部材とシールリングとを溶着させた後の状態を示す断面図であり、（Ｂ）は、図６（Ａ）における領域Ｃを示す拡大断面図である。(A) is sectional drawing which shows the state after welding a 2nd sealing member and a seal ring, (B) is an expanded sectional view which shows the area | region C in FIG. 6 (A). 気密封止パッケージの信頼性を確認するための実験装置の概略断面図である。It is a schematic sectional drawing of the experimental apparatus for confirming the reliability of an airtight sealing package.

符号の説明Explanation of symbols

１ パッケージ本体、１ａ ベース部、１ｂ キャビティ部、２ 接地電極、３ 信号線路、４ ビアホール、５ ランド、６ 導体層、７ 封止部材、８ シールリング、９ はんだマスク材、１０ セラミック板、１１ 第２の封止部材、１２ 半導体素子、１２ａ 電極、１３ 配線基板、１３ａ 配線、１４ ボンディングワイヤ、１５ 蓋、１６ ゴム板、１７ 真空吸着ステージ、１８ 真空吸着穴、１９ カバー部材、２０ 気密封止パッケージ。   DESCRIPTION OF SYMBOLS 1 Package main body, 1a base part, 1b Cavity part, 2 Ground electrode, 3 Signal line, 4 Via hole, 5 Land, 6 Conductive layer, 7 Sealing member, 8 Seal ring, 9 Solder mask material, 10 Ceramic board, 11 1st 2 sealing member, 12 semiconductor element, 12a electrode, 13 wiring board, 13a wiring, 14 bonding wire, 15 lid, 16 rubber plate, 17 vacuum suction stage, 18 vacuum suction hole, 19 cover member, 20 airtight sealing package .

Claims (11)

内側に電子部品を収納する気密封止パッケージであって、
パッケージ本体と、
前記パッケージ本体と接着される第１の封止部材と、
前記第１の封止部材の融点よりも低い融点であり、前記第１の封止部材と接着される第２の封止部材と、
前記第２の封止部材により前記第１の封止部材と接合されるカバー部材とを備える、気密封止パッケージ。 A hermetically sealed package that houses electronic components inside,
The package body;
A first sealing member bonded to the package body;
A second sealing member having a melting point lower than the melting point of the first sealing member and bonded to the first sealing member;
An airtight sealed package comprising: a cover member joined to the first sealing member by the second sealing member. 前記カバー部材が、シールリングと蓋とを含む、請求項１に記載の気密封止パッケージ。   The hermetic sealing package according to claim 1, wherein the cover member includes a seal ring and a lid. 前記第１の封止部材がＡｕを含まない材料からなる、請求項１または２に記載の気密封止パッケージ。   The hermetic sealing package according to claim 1 or 2, wherein the first sealing member is made of a material not containing Au. 前記第２の封止部材がＳｎ、またはＳｎにＰｂ、Ａｇ、Ｃｕ、Ｚｎ、Ｂｉ、およびＩｎのうちの少なくとも１つが添加されている材料からなる、請求項１〜３のいずれかに記載の気密封止パッケージ。   The said 2nd sealing member consists of material in which at least 1 of Pb, Ag, Cu, Zn, Bi, and In is added to Sn or Sn. Airtight sealed package. 前記パッケージ本体がセラミック基板を含み、
前記セラミック基板が低温焼成セラミックス（ＬＴＣＣ）である、請求項１〜４のいずれか１項に記載の気密封止パッケージ。 The package body includes a ceramic substrate;
The hermetic sealing package according to any one of claims 1 to 4, wherein the ceramic substrate is a low-temperature fired ceramic (LTCC). 内側に電子部品を収納する気密封止パッケージの製造方法であって、
パッケージ本体の表面に第１の封止部材を固着する工程と、
前記第１の封止部材の融点よりも低い融点の第２の封止部材を、前記第１の封止部材の上に配置する工程と、
前記第２の封止部材の上にカバー部材を配置して、前記第１の封止部材の融点より低い温度で前記第２の封止部材を熱処理することにより前記第２の封止部材を溶融凝固させることによって、前記第２の封止部材と前記カバー部材とを溶着する工程とを備える、気密封止パッケージの製造方法。 A manufacturing method of a hermetically sealed package for storing electronic components inside,
Fixing the first sealing member to the surface of the package body;
Disposing a second sealing member having a melting point lower than the melting point of the first sealing member on the first sealing member;
A cover member is disposed on the second sealing member, and the second sealing member is heat-treated at a temperature lower than the melting point of the first sealing member to thereby change the second sealing member. A method of manufacturing an airtight sealed package, comprising: melting and solidifying the second sealing member and the cover member. 前記カバー部材は、シールリングと蓋とを含み、
前記第２の封止部材と前記カバー部材とを溶着する工程は、前記第２の封止部材の上に前記シールリングを配置して、前記熱処理することにより前記第２の封止部材を溶融凝固させることによって、前記第２の封止部材と前記シールリングとを溶着する工程と、
前記シールリングの上に前記蓋を接続する工程とを含む、請求項６に記載の気密封止パッケージの製造方法。 The cover member includes a seal ring and a lid,
The step of welding the second sealing member and the cover member includes disposing the seal ring on the second sealing member and melting the second sealing member by performing the heat treatment. A step of welding the second sealing member and the seal ring by solidifying;
The method for manufacturing an airtight sealed package according to claim 6, further comprising connecting the lid on the seal ring. 前記第１の封止部材がＡｕを含まない材料からなる、請求項６または７に記載の気密封止パッケージの製造方法。   The manufacturing method of the airtight sealing package of Claim 6 or 7 which consists of a material in which the said 1st sealing member does not contain Au. 前記第２の封止部材がＳｎ、またはＳｎにＰｂ、Ａｇ、Ｃｕ、Ｚｎ、Ｂｉ、およびＩｎのうちの少なくとも１つが添加されている材料からなる、請求項６〜８のいずれか１項に記載の気密封止パッケージの製造方法。   9. The method according to claim 6, wherein the second sealing member is made of Sn or a material in which at least one of Pb, Ag, Cu, Zn, Bi, and In is added to Sn. The manufacturing method of the airtight sealing package of description. 前記パッケージ本体がセラミック基板を含み、
前記セラミック基板が低温焼成セラミックス（ＬＴＣＣ）である、請求項６〜９のいずれか１項に記載の気密封止パッケージの製造方法。 The package body includes a ceramic substrate;
The manufacturing method of the airtight sealing package of any one of Claims 6-9 whose said ceramic substrate is low-temperature baking ceramics (LTCC). 請求項６〜１０のいずれか１項の気密封止パッケージの製造方法により製造される、気密封止パッケージ。   An airtight sealed package manufactured by the method for manufacturing an airtight sealed package according to any one of claims 6 to 10.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060739A (en) * 1983-09-14 1985-04-08 Hitachi Ltd Semiconductor device
JP2000086368A (en) * 1998-09-16 2000-03-28 Fuji Electric Co Ltd Nitride ceramic substrate
JP2002243993A (en) * 2001-02-20 2002-08-28 Kyocera Corp Package for housing optical semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060739A (en) * 1983-09-14 1985-04-08 Hitachi Ltd Semiconductor device
JP2000086368A (en) * 1998-09-16 2000-03-28 Fuji Electric Co Ltd Nitride ceramic substrate
JP2002243993A (en) * 2001-02-20 2002-08-28 Kyocera Corp Package for housing optical semiconductor device

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