JP2006513568A - 曲面を有する半導体の露光装置及び露光方法 - Google Patents

曲面を有する半導体の露光装置及び露光方法 Download PDF

Info

Publication number
JP2006513568A
JP2006513568A JP2004566394A JP2004566394A JP2006513568A JP 2006513568 A JP2006513568 A JP 2006513568A JP 2004566394 A JP2004566394 A JP 2004566394A JP 2004566394 A JP2004566394 A JP 2004566394A JP 2006513568 A JP2006513568 A JP 2006513568A
Authority
JP
Japan
Prior art keywords
mask pattern
semiconductor device
lens
ring
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004566394A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006513568A5 (https=
Inventor
純一 吉永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azbil Corp filed Critical Azbil Corp
Publication of JP2006513568A publication Critical patent/JP2006513568A/ja
Publication of JP2006513568A5 publication Critical patent/JP2006513568A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004566394A 2003-01-09 2003-01-09 曲面を有する半導体の露光装置及び露光方法 Pending JP2006513568A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/000567 WO2004063812A1 (en) 2003-01-09 2003-01-09 Apparatus and method of exposing a semiconductor device having a curved surface to light

Publications (2)

Publication Number Publication Date
JP2006513568A true JP2006513568A (ja) 2006-04-20
JP2006513568A5 JP2006513568A5 (https=) 2008-12-18

Family

ID=32710272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004566394A Pending JP2006513568A (ja) 2003-01-09 2003-01-09 曲面を有する半導体の露光装置及び露光方法

Country Status (4)

Country Link
US (1) US7190433B2 (https=)
JP (1) JP2006513568A (https=)
AU (1) AU2003209190A1 (https=)
WO (1) WO2004063812A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017134356A (ja) * 2016-01-29 2017-08-03 株式会社オーク製作所 露光装置および露光方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103901B2 (ja) * 2006-01-27 2012-12-19 富士通セミコンダクター株式会社 半導体装置の製造方法
US20160167164A9 (en) * 2006-07-10 2016-06-16 Lazare Kaplan International, Inc. System and method for gemstone microinscription
WO2009018846A1 (en) * 2007-08-09 2009-02-12 Carl Zeiss Smt Ag Method of structuring a photosensitive material
KR102096269B1 (ko) * 2016-03-31 2020-04-03 주식회사 엘지화학 포토 마스크 및 이를 이용한 컬러필터용 컬럼 스페이서의 제조방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424803A (en) * 1991-08-09 1995-06-13 Canon Kabushiki Kaisha Projection exposure apparatus and semiconductor device manufacturing method
JP2852169B2 (ja) * 1993-02-25 1999-01-27 日本電気株式会社 投影露光方法および装置
US6304317B1 (en) * 1993-07-15 2001-10-16 Nikon Corporation Projection apparatus and method
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
JPH10312945A (ja) * 1997-03-12 1998-11-24 Canon Inc 球状デバイス露光装置及び製造方法
US6097472A (en) * 1997-04-17 2000-08-01 Canon Kabushiki Kaisha Apparatus and method for exposing a pattern on a ball-like device material
US6130742A (en) * 1997-10-17 2000-10-10 Ball Semiconductor, Ltd. Exposure apparatus for a ball shaped substrate
JP2000021978A (ja) * 1998-07-03 2000-01-21 Mitsubishi Electric Corp フォトマスクおよびパターン形成方法
US6251550B1 (en) * 1998-07-10 2001-06-26 Ball Semiconductor, Inc. Maskless photolithography system that digitally shifts mask data responsive to alignment data
US6136617A (en) * 1998-07-10 2000-10-24 Ball Semiconductor, Inc. Alignment system for a spherical shaped device
US6262791B1 (en) * 1998-07-10 2001-07-17 Ball Semiconductor, Inc. Optical element for imaging a flat mask onto a nonplanar substrate
US6251765B1 (en) * 1998-07-10 2001-06-26 Ball Semiconductor, Inc. Manufacturing metal dip solder bumps for semiconductor devices
EP1095310A4 (en) * 1998-07-10 2004-10-20 Ball Semiconductor Inc REFLECTION SYSTEM FOR IMAGING ON A NON-PLANAR SUBSTRATE
US6304316B1 (en) * 1998-10-22 2001-10-16 Anvik Corporation Microlithography system for high-resolution large-area patterning on curved surfaces
US6529262B1 (en) * 1999-04-14 2003-03-04 Ball Semiconductor, Inc. System and method for performing lithography on a substrate
US6265234B1 (en) * 2000-01-25 2001-07-24 Ball Semiconductor, Inc. Alignment system for a spherical device
US6416908B1 (en) * 2000-06-29 2002-07-09 Anvik Corporation Projection lithography on curved substrates
US6707534B2 (en) * 2002-05-10 2004-03-16 Anvik Corporation Maskless conformable lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017134356A (ja) * 2016-01-29 2017-08-03 株式会社オーク製作所 露光装置および露光方法

Also Published As

Publication number Publication date
AU2003209190A1 (en) 2004-08-10
US20060051979A1 (en) 2006-03-09
US7190433B2 (en) 2007-03-13
WO2004063812A1 (en) 2004-07-29

Similar Documents

Publication Publication Date Title
US8760627B2 (en) Lithographic apparatus and method of manufacturing article
US6577379B1 (en) Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate
US6061118A (en) Reflection system for imaging on a nonplanar substrate
JPH09507607A (ja) 集積回路デバイスの製造方法及び製造装置
US20050041228A1 (en) Method and apparatus for irradiating a microlithographic substrate
JP2006513568A (ja) 曲面を有する半導体の露光装置及び露光方法
TW200907606A (en) Lithographic method and device manufactured thereby
CN1519586A (zh) 微透镜阵列的制造方法
JP2006513568A5 (https=)
CN113161227A (zh) 基于无掩模光刻的扇出封装系统、方法及重布线方法
US7145633B2 (en) Apparatus and method of exposing light to a semiconductor device having a curved surface
JP4535881B2 (ja) 曲面を有する半導体デバイスに露光する装置および方法
US20070263194A1 (en) Method of exposing a wafer to a light, and reticle, reticle assembly and exposing apparatus for performing the same
TWI530986B (zh) ３ｄ堆疊式集成電路之微影製程方法及系統
US20170212425A1 (en) Exposure apparatus
US6529262B1 (en) System and method for performing lithography on a substrate
US10295911B2 (en) Extreme ultraviolet lithography system that utilizes pattern stitching
TWI712869B (zh) 掃描對準裝置及其掃描方法
JP3376043B2 (ja) 照明装置及びそれを用いた投影露光装置
US20030108806A1 (en) Substrate exposure apparatus and method
US7333217B2 (en) System and method for detecting and correcting position deviations of an object having a curved surface
JP2003159636A (ja) 研磨方法及び装置、露光装置、デバイス製造方法及びデバイス
TW200308005A (en) Microelectronic substrate edge bead processing apparatus and method
JPH0513308A (ja) 半導体装置の製造方法
US20070072128A1 (en) Method of manufacturing an integrated circuit to obtain uniform exposure in a photolithographic process

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20081023

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20081023

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20081023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090616

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20091027