JP2006510228A - 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 - Google Patents
処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 Download PDFInfo
- Publication number
- JP2006510228A JP2006510228A JP2004565459A JP2004565459A JP2006510228A JP 2006510228 A JP2006510228 A JP 2006510228A JP 2004565459 A JP2004565459 A JP 2004565459A JP 2004565459 A JP2004565459 A JP 2004565459A JP 2006510228 A JP2006510228 A JP 2006510228A
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- Prior art keywords
- value
- monitored
- transition point
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
- G05B23/0243—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
- G05B23/0254—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Artificial Intelligence (AREA)
- Evolutionary Computation (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/318,967 US6859765B2 (en) | 2002-12-13 | 2002-12-13 | Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection |
| PCT/US2003/039778 WO2004061693A1 (en) | 2002-12-13 | 2003-12-11 | Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012164925A Division JP2012238882A (ja) | 2002-12-13 | 2012-07-25 | 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006510228A true JP2006510228A (ja) | 2006-03-23 |
| JP2006510228A5 JP2006510228A5 (https=) | 2011-07-28 |
Family
ID=32506518
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004565459A Pending JP2006510228A (ja) | 2002-12-13 | 2003-12-11 | 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 |
| JP2012164925A Pending JP2012238882A (ja) | 2002-12-13 | 2012-07-25 | 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012164925A Pending JP2012238882A (ja) | 2002-12-13 | 2012-07-25 | 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6859765B2 (https=) |
| EP (1) | EP1570363B1 (https=) |
| JP (2) | JP2006510228A (https=) |
| KR (1) | KR101007159B1 (https=) |
| CN (1) | CN100350403C (https=) |
| AU (1) | AU2003303494A1 (https=) |
| TW (1) | TWI232530B (https=) |
| WO (1) | WO2004061693A1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI240326B (en) * | 2002-10-31 | 2005-09-21 | Tokyo Electron Ltd | Method and apparatus for determining an etch property using an endpoint signal |
| US6859765B2 (en) * | 2002-12-13 | 2005-02-22 | Lam Research Corporation | Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection |
| US7186574B2 (en) * | 2004-09-30 | 2007-03-06 | Hitachi Global Storage Technologies Netherlands B.V. | CMP process metrology test structures |
| US7537511B2 (en) * | 2006-03-14 | 2009-05-26 | Micron Technology, Inc. | Embedded fiber acoustic sensor for CMP process endpoint |
| US7755011B2 (en) * | 2006-06-23 | 2010-07-13 | Lockheed Martin Corporation | Target maneuver detection |
| US8106651B2 (en) * | 2008-04-17 | 2012-01-31 | Novellus Systems, Inc. | Methods and apparatuses for determining thickness of a conductive layer |
| US8618807B2 (en) * | 2009-06-30 | 2013-12-31 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| US8473089B2 (en) * | 2009-06-30 | 2013-06-25 | Lam Research Corporation | Methods and apparatus for predictive preventive maintenance of processing chambers |
| US8538572B2 (en) * | 2009-06-30 | 2013-09-17 | Lam Research Corporation | Methods for constructing an optimal endpoint algorithm |
| US8983631B2 (en) * | 2009-06-30 | 2015-03-17 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
| CN102541719A (zh) * | 2010-12-24 | 2012-07-04 | 鸿富锦精密工业(深圳)有限公司 | 排除错误观测值的系统及方法 |
| US9403254B2 (en) * | 2011-08-17 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for real-time error detection in CMP processing |
| US9308618B2 (en) * | 2012-04-26 | 2016-04-12 | Applied Materials, Inc. | Linear prediction for filtering of data during in-situ monitoring of polishing |
| US20140163907A1 (en) * | 2012-12-10 | 2014-06-12 | General Electric Company | Systems and methods for fault detection |
| JP6625098B2 (ja) * | 2017-07-20 | 2019-12-25 | 株式会社Kokusai Electric | 基板処理システム、半導体装置の製造方法およびプログラム |
| US11504821B2 (en) | 2017-11-16 | 2022-11-22 | Applied Materials, Inc. | Predictive filter for polishing pad wear rate monitoring |
| JP6525044B1 (ja) * | 2017-12-13 | 2019-06-05 | オムロン株式会社 | 監視システム、学習装置、学習方法、監視装置及び監視方法 |
| KR102103150B1 (ko) * | 2018-03-14 | 2020-04-22 | (주)아이티공간 | 구동부의 정밀 예지 보전방법 |
| KR102103145B1 (ko) * | 2018-03-14 | 2020-04-22 | (주)아이티공간 | 구동부의 정밀 예지 보전방법 |
| KR102103143B1 (ko) * | 2018-03-14 | 2020-04-22 | (주)아이티공간 | 구동부의 정밀 예지 보전방법 |
| KR102103147B1 (ko) * | 2018-03-14 | 2020-04-22 | (주)아이티공간 | 구동부의 정밀 예지 보전방법 |
| KR102103144B1 (ko) * | 2018-03-14 | 2020-04-22 | (주)아이티공간 | 구동부의 정밀 예지 보전방법 |
| CN109118274B (zh) * | 2018-07-25 | 2021-11-16 | 武汉轻工大学 | 任务点去噪分类方法、系统、终端设备及存储介质 |
| WO2020185242A1 (en) * | 2019-03-08 | 2020-09-17 | Kla-Tencor Corporation | Dynamic amelioration of misregistration measurement |
| US11455154B2 (en) | 2020-12-10 | 2022-09-27 | International Business Machines Corporation | Vector-based identification of software dependency relationships |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114329A (en) * | 1980-02-15 | 1981-09-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method for sensing time of completion of dry etching |
| JPH0428224A (ja) * | 1990-05-23 | 1992-01-30 | Seiko Instr Inc | 薄膜のエッチング方法 |
| JPH06318572A (ja) * | 1993-03-04 | 1994-11-15 | Tokyo Electron Yamanashi Kk | プラズマ処理の終点検出方法およびその装置 |
| JPH08148475A (ja) * | 1994-11-16 | 1996-06-07 | Sony Corp | エッチング処理装置 |
| WO1999040617A1 (en) * | 1998-02-03 | 1999-08-12 | Tokyo Electron Yamanashi Limited | End point detecting method for semiconductor plasma processing |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4809196A (en) * | 1986-04-10 | 1989-02-28 | International Business Machines Corporation | Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior |
| GB8703931D0 (en) * | 1987-02-19 | 1993-05-05 | British Aerospace | Tracking systems |
| GB2214813A (en) * | 1988-01-14 | 1989-09-13 | Stuart Charles Webb | Rate-responsive pacemaker |
| US4836213A (en) * | 1988-02-25 | 1989-06-06 | Nippon Colin Co., Ltd. | Pressure control system for continuous blood pressure monitor transducer |
| US5091963A (en) * | 1988-05-02 | 1992-02-25 | The Standard Oil Company | Method and apparatus for inspecting surfaces for contrast variations |
| JP3400821B2 (ja) | 1993-06-08 | 2003-04-28 | 松下電器産業株式会社 | データ自動監視システム |
| US5704362A (en) * | 1993-08-13 | 1998-01-06 | Johnson & Johnson Medical, Inc. | Method for oscillometric blood pressure determination employing curve fitting |
| US5444637A (en) * | 1993-09-28 | 1995-08-22 | Advanced Micro Devices, Inc. | Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed |
| US6538723B2 (en) * | 1996-08-05 | 2003-03-25 | Nikon Corporation | Scanning exposure in which an object and pulsed light are moved relatively, exposing a substrate by projecting a pattern on a mask onto the substrate with pulsed light from a light source, light sources therefor, and methods of manufacturing |
| US5828567A (en) * | 1996-11-07 | 1998-10-27 | Rosemount Inc. | Diagnostics for resistance based transmitter |
| US6063028A (en) * | 1997-03-20 | 2000-05-16 | Luciano; Joanne Sylvia | Automated treatment selection method |
| US6529460B1 (en) * | 1998-01-31 | 2003-03-04 | Seagate Technology Llc | Detection of pulse peak instance and amplitude in a storage drive |
| US6780657B2 (en) * | 1998-03-19 | 2004-08-24 | Kabushiki Kaisha Toshiba | Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers |
| US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
| WO2000024052A1 (en) * | 1998-10-19 | 2000-04-27 | The Secretary Of State For Defence | Layer processing |
| US6289288B1 (en) * | 1999-03-01 | 2001-09-11 | Chelsea Group Ltd | Method of determining measured gas data with remote sensors |
| US6449571B1 (en) * | 1999-07-09 | 2002-09-10 | Mykrolis Corporation | System and method for sensor response linearization |
| US6475153B1 (en) * | 2000-05-10 | 2002-11-05 | Motorola Inc. | Method for obtaining blood pressure data from optical sensor |
| GB2372324B (en) * | 2000-11-10 | 2004-12-22 | Leamount Ltd | Air flow measurement |
| CN1177295C (zh) * | 2001-01-04 | 2004-11-24 | 鸿友科技股份有限公司 | 判断扫描器扫描所得的影像是否发生掉线情形的方法 |
| JP3993396B2 (ja) * | 2001-03-30 | 2007-10-17 | 株式会社東芝 | 半導体装置の製造方法 |
| US6662116B2 (en) * | 2001-11-30 | 2003-12-09 | Exxonmobile Research And Engineering Company | Method for analyzing an unknown material as a blend of known materials calculated so as to match certain analytical data and predicting properties of the unknown based on the calculated blend |
| US6714338B2 (en) * | 2002-05-16 | 2004-03-30 | Texas Instruments Incorporated | MEM's mirror internal sensor linearization based on driver linearity |
| US6859765B2 (en) * | 2002-12-13 | 2005-02-22 | Lam Research Corporation | Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection |
-
2002
- 2002-12-13 US US10/318,967 patent/US6859765B2/en not_active Expired - Fee Related
-
2003
- 2003-12-11 KR KR1020057008757A patent/KR101007159B1/ko not_active Expired - Fee Related
- 2003-12-11 AU AU2003303494A patent/AU2003303494A1/en not_active Abandoned
- 2003-12-11 EP EP03808456A patent/EP1570363B1/en not_active Expired - Lifetime
- 2003-12-11 CN CNB2003801057276A patent/CN100350403C/zh not_active Expired - Fee Related
- 2003-12-11 JP JP2004565459A patent/JP2006510228A/ja active Pending
- 2003-12-11 TW TW092134960A patent/TWI232530B/zh not_active IP Right Cessation
- 2003-12-11 WO PCT/US2003/039778 patent/WO2004061693A1/en not_active Ceased
-
2005
- 2005-01-05 US US11/030,374 patent/US7010468B2/en not_active Expired - Lifetime
-
2012
- 2012-07-25 JP JP2012164925A patent/JP2012238882A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114329A (en) * | 1980-02-15 | 1981-09-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method for sensing time of completion of dry etching |
| JPH0428224A (ja) * | 1990-05-23 | 1992-01-30 | Seiko Instr Inc | 薄膜のエッチング方法 |
| JPH06318572A (ja) * | 1993-03-04 | 1994-11-15 | Tokyo Electron Yamanashi Kk | プラズマ処理の終点検出方法およびその装置 |
| JPH08148475A (ja) * | 1994-11-16 | 1996-06-07 | Sony Corp | エッチング処理装置 |
| WO1999040617A1 (en) * | 1998-02-03 | 1999-08-12 | Tokyo Electron Yamanashi Limited | End point detecting method for semiconductor plasma processing |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050084998A (ko) | 2005-08-29 |
| US20050125202A1 (en) | 2005-06-09 |
| KR101007159B1 (ko) | 2011-01-12 |
| WO2004061693A1 (en) | 2004-07-22 |
| TWI232530B (en) | 2005-05-11 |
| AU2003303494A1 (en) | 2004-07-29 |
| CN1726479A (zh) | 2006-01-25 |
| CN100350403C (zh) | 2007-11-21 |
| US20040117054A1 (en) | 2004-06-17 |
| EP1570363B1 (en) | 2011-05-18 |
| US7010468B2 (en) | 2006-03-07 |
| JP2012238882A (ja) | 2012-12-06 |
| US6859765B2 (en) | 2005-02-22 |
| TW200414396A (en) | 2004-08-01 |
| EP1570363A4 (en) | 2006-04-12 |
| EP1570363A1 (en) | 2005-09-07 |
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