JP2006500590A - 渦電流ベースの測定性能 - Google Patents
渦電流ベースの測定性能 Download PDFInfo
- Publication number
- JP2006500590A JP2006500590A JP2004540101A JP2004540101A JP2006500590A JP 2006500590 A JP2006500590 A JP 2006500590A JP 2004540101 A JP2004540101 A JP 2004540101A JP 2004540101 A JP2004540101 A JP 2004540101A JP 2006500590 A JP2006500590 A JP 2006500590A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- sensor
- eddy current
- current sensor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 title abstract description 16
- 230000005291 magnetic effect Effects 0.000 claims abstract description 127
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000035945 sensitivity Effects 0.000 claims abstract description 27
- 230000002708 enhancing effect Effects 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims description 41
- 238000001514 detection method Methods 0.000 claims description 17
- 239000003302 ferromagnetic material Substances 0.000 claims description 12
- 239000002907 paramagnetic material Substances 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 229910000889 permalloy Inorganic materials 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 3
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000001360 synchronised effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 76
- 230000005672 electromagnetic field Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 21
- 238000010586 diagram Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 7
- 230000005294 ferromagnetic effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000004044 response Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000002889 diamagnetic material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005298 paramagnetic effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002893 slag Substances 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005408 paramagnetism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
- G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/023—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance where the material is placed in the field of a coil
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
- G01N27/82—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws
- G01N27/90—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws using eddy currents
Abstract
Description
本発明は、一般的には集積回路加工に関するものであり、さらに詳細には半導体ウェーハ製造中のプロセス制御のための計測に関するものである。
大局的には、渦電流といったセンサの感度を向上させ、渦電流といった測定対象信号の大きさに影響を与える磁界を強化することにより、本発明はこれらの必要性を満たす。本発明は、装置、システム、機器、方法を含むさまざまな方法で実行可能であることを認めるべきである。本発明の発明上の実施例を複数個、以下に説明する。
本発明の複数の代表的実施例について、ここで添付図面を参照しながら以下に説明する。図1については、上の『発明の背景』で論じられている。
Claims (20)
- 抵抗ベース特性を求めるための方法であって、この方法が:
磁界と対応付けられた信号強度を検出するよう構成されるセンサを提供するステップと;
導電性対象物をセンサの検出スペースに導入するステップと;
センサの感度および信号対雑音比を向上させるため、センサで生成される一次磁界を、磁界強化源を通して強化するステップとを含む方法。 - 請求項1に記載の方法であって、センサが渦電流センサであることを特徴とする方法。
- 請求項1に記載の方法であって、信号強度が、導電性対象物の表面に配設された薄膜と導電性対象物とのうちの1つの厚さを示すことを特徴とする方法。
- 請求項1に記載の方法であって、抵抗ベース特性が、層厚さ、ドーパント濃度、薄膜スタック組成、金属薄膜健全性、表面粗さ、表面層健全性、不純物分布、粒径分布よりなる組から選定されることを特徴とする方法。
- 請求項1に記載の方法であって、センサの感度および信号対雑音比を向上させるため、センサで生成される一次磁界を、磁界強化源を通して強化する方法の操作が、
センサと反対側にある導電性対象物の他の側面に磁界強化源を設けるステップを含むことを特徴とする方法。 - 請求項2に記載の方法であって、磁界強化源が、強磁性体、常磁性体、その他の渦電流センサよりなる組から選定されることを特徴とする方法。
- 請求項6に記載の方法であって、強磁性体がパーマロイベース材料であることを特徴とする方法。
- 導電性対象物の抵抗ベース特性を測定するための装置であって、この装置が:
磁界で生成される信号を検出するよう構成されるセンサと;
磁界強化源であって、センサと磁界強化源との間の検出スペース内に導電性対象物を設けることができるようセンサに対して磁界強化源を設け、磁界強化源がセンサの感度を向上させる磁界強化源とを備える装置。 - 請求項8に記載の装置であって、センサが渦電流センサであることを特徴とする装置。
- 請求項9に記載の装置であって、信号の強度が、導電性対象物の層厚さ、導電性対象物のドーパントレベル、導電性対象物の健全性特性、導電性対象物の表面粗さ、導電性対象物の不純物量、導電性対象物の粒径よりなる組から選定されることを特徴とする装置。
- 請求項8に記載の装置であって、磁界強化源が、強磁性体と常磁性体のうちの1つであることを特徴とする装置。
- 請求項9に記載の装置であって、磁界強化源が、対象物の他の側面の反対側にあり渦電流センサと実質的に並ぶ他の渦電流センサであり、他の渦電流センサが、渦電流センサの磁界と同期する第2磁界を生成することを特徴とする装置。
- 請求項10に記載の装置であって、導電性対象物の層が金属層であることを特徴とする装置。
- 請求項10に記載の装置であって、層の厚さが約2500オングストロームと約0オングストロームの間であるところの装置。
- 磁界で生成される信号を通して対象物の層の厚さ判定を可能にするシステムであって、このシステムが:
渦電流センサと;
渦電流センサと磁界強化源との間に検出スペースを規定するよう位置づけされた磁界強化源であって、この磁界強化源が渦電流センサの軸と交差する磁界強化源と;
対象物が渦電流センサと磁界強化源との間の検出スペース内に位置づけられるよう対象物を支持するよう構成されるベースと
渦電流センサと通信する制御装置であって、この制御装置が、渦電流センサで検出される信号から対象物の層の厚さを出力するよう構成され、渦電流センサの感度が磁界強化源で強化されることを特徴とする制御装置とを備えるシステム。 - 請求項15に記載のシステムであって、磁界強化源が、対象物の他の側面の反対側に設けられる他の渦電流センサであり、他の渦電流センサが渦電流センサと実質的に並び電気的に同期することを特徴とするシステム。
- 請求項15に記載のシステムであって、磁界強化源は、強磁性体と常磁性体のうちの1つであることを特徴とするシステム。
- 請求項17に記載のシステムであって、強磁性体が、パーマロイ、鉄含有化合物、ニッケル含有化合物、コバルト含有化合物よりなる組から選定されることを特徴とするシステム。
- 請求項17に記載のシステムであって、常磁性体が、マグネシウム、ガドリニウム、アルミニウムよりなる組から選定されることを特徴とするシステム。
- 請求項15に記載のシステムであって、支持がウェーハキャリアであり、このウェーハキャリアが、それに埋め込まれた渦電流センサをもち、磁界強化源が、研磨パッドのステンレス鋼裏打ちであることを特徴とするシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/256,055 US7084621B2 (en) | 2002-09-25 | 2002-09-25 | Enhancement of eddy current based measurement capabilities |
PCT/US2003/029284 WO2004029606A1 (en) | 2002-09-25 | 2003-09-15 | Eddy current based measurement capabilities |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006500590A true JP2006500590A (ja) | 2006-01-05 |
JP2006500590A5 JP2006500590A5 (ja) | 2006-11-02 |
JP4350041B2 JP4350041B2 (ja) | 2009-10-21 |
Family
ID=31993492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004540101A Expired - Lifetime JP4350041B2 (ja) | 2002-09-25 | 2003-09-15 | 渦電流ベースの測定性能 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7084621B2 (ja) |
EP (1) | EP1543316A1 (ja) |
JP (1) | JP4350041B2 (ja) |
KR (1) | KR100921358B1 (ja) |
AU (1) | AU2003267272A1 (ja) |
MY (1) | MY143920A (ja) |
TW (1) | TWI230394B (ja) |
WO (1) | WO2004029606A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007135753A1 (ja) * | 2006-05-19 | 2007-11-29 | Tetsuo Sakaki | ウエハのシリコン層の探傷装置及び探傷方法 |
JP2011133383A (ja) * | 2009-12-25 | 2011-07-07 | Nishi Nippon Electric Wire & Cable Co Ltd | 2次元ベクトル磁気測定装置 |
WO2020032040A1 (ja) * | 2018-08-06 | 2020-02-13 | 東芝エネルギーシステムズ株式会社 | 渦電流探傷装置および渦電流探傷方法 |
WO2020065875A1 (ja) * | 2018-09-27 | 2020-04-02 | 日本製鉄株式会社 | 渦電流を利用した材質異常部検知方法および材質異常部検知装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7112961B2 (en) * | 2002-12-13 | 2006-09-26 | Applied Materials, Inc. | Method and apparatus for dynamically measuring the thickness of an object |
US6788050B2 (en) * | 2002-12-23 | 2004-09-07 | Lam Research Corp. | System, method and apparatus for thin-film substrate signal separation using eddy current |
JP4527431B2 (ja) * | 2004-04-08 | 2010-08-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7537511B2 (en) * | 2006-03-14 | 2009-05-26 | Micron Technology, Inc. | Embedded fiber acoustic sensor for CMP process endpoint |
CN101657693B (zh) * | 2006-09-29 | 2012-02-15 | 空客运营有限公司 | 测定复合材料上的涂层的厚度的方法 |
JP2009076922A (ja) * | 2007-09-24 | 2009-04-09 | Applied Materials Inc | 連続的半径測定によるウェハ縁の特徴付け |
US8337278B2 (en) * | 2007-09-24 | 2012-12-25 | Applied Materials, Inc. | Wafer edge characterization by successive radius measurements |
US20100279438A1 (en) * | 2009-05-01 | 2010-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of in-situ identification for contamination control in semiconductor fabrication |
CN106160254B (zh) | 2015-04-03 | 2021-02-05 | 恩智浦美国有限公司 | 用于无线充电系统的电力接收器 |
US11199605B2 (en) * | 2017-01-13 | 2021-12-14 | Applied Materials, Inc. | Resistivity-based adjustment of measurements from in-situ monitoring |
JP7179586B2 (ja) * | 2018-11-08 | 2022-11-29 | 株式会社荏原製作所 | 渦電流検出装置及び研磨装置 |
CN113028944B (zh) * | 2021-03-31 | 2022-09-13 | 九江职业技术学院 | 一种新型楼板厚度检测装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2049976B2 (de) * | 1970-10-12 | 1972-09-21 | Elektro-Physik Hans Nix & Dr.-Ing. E. Steingroever KG, 5000 Köln | Verfahren zur messung der dicke von schichten im bauwesen und vorrichtung zur durchfuehrung des verfahren |
DE2345849A1 (de) * | 1973-09-12 | 1975-03-20 | Leybold Heraeus Gmbh & Co Kg | Anordnung zur beruehrungslosen messung der dicke elektrisch leitfaehiger schichten |
US4556845A (en) * | 1982-05-17 | 1985-12-03 | International Business Machines Corporation | Method for monitoring deposition rate using an eddy current detector |
US4706020A (en) * | 1983-12-12 | 1987-11-10 | General Electric Company | High frequency eddy current probe with planar, spiral-like coil on flexible substrate for detecting flaws in semi-conductive material |
GB8826817D0 (en) | 1988-11-16 | 1988-12-21 | Nat Nuclear Corp Ltd | Eddy current non-destructive examination |
US5537038A (en) * | 1988-12-15 | 1996-07-16 | Nkk Corporation | Magnetic flux measuring method and apparatus for detecting high frequency components of magnetic flux with high speed orientation |
US5485082A (en) * | 1990-04-11 | 1996-01-16 | Micro-Epsilon Messtechnik Gmbh & Co. Kg | Method of calibrating a thickness measuring device and device for measuring or monitoring the thickness of layers, tapes, foils, and the like |
CA2043347A1 (en) | 1990-05-30 | 1991-12-01 | Yukio Kohmura | Method and system for inspection of electroconductive film using eddy current and process and system for production of optical fibres using method and system |
DE4227734C2 (de) * | 1992-08-21 | 1996-05-15 | Leybold Ag | Anordnung und Verfahren zum Messen der Dicke einer Schicht |
US5473247A (en) * | 1993-04-06 | 1995-12-05 | Magnetic Analysis Corporation | Apparatus for discriminating defects in top and bottom surfaces of objects |
US5926020A (en) * | 1994-11-16 | 1999-07-20 | Samson; Rock | Eddy current hybrid probe with movable magnetic field altering member |
US5559428A (en) * | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
US5660672A (en) * | 1995-04-10 | 1997-08-26 | International Business Machines Corporation | In-situ monitoring of conductive films on semiconductor wafers |
SE508354C2 (sv) * | 1996-07-05 | 1998-09-28 | Asea Atom Ab | Förfarande och anordning för bestämning av skikttjocklek |
US6291992B1 (en) * | 1996-07-12 | 2001-09-18 | Shell Oil Company | Eddy current inspection technique |
US6265870B1 (en) * | 1999-09-02 | 2001-07-24 | Ndt Technologies, Inc. | Eddy current sensor assembly for detecting structural faults in magnetically permeable objects |
JP4874465B2 (ja) * | 2000-03-28 | 2012-02-15 | 株式会社東芝 | 渦電流損失測定センサ |
-
2002
- 2002-09-25 US US10/256,055 patent/US7084621B2/en not_active Expired - Lifetime
-
2003
- 2003-09-15 EP EP03749744A patent/EP1543316A1/en not_active Withdrawn
- 2003-09-15 AU AU2003267272A patent/AU2003267272A1/en not_active Abandoned
- 2003-09-15 KR KR1020057005058A patent/KR100921358B1/ko active IP Right Grant
- 2003-09-15 JP JP2004540101A patent/JP4350041B2/ja not_active Expired - Lifetime
- 2003-09-15 WO PCT/US2003/029284 patent/WO2004029606A1/en active Application Filing
- 2003-09-23 MY MYPI20033622A patent/MY143920A/en unknown
- 2003-09-24 TW TW092126327A patent/TWI230394B/zh not_active IP Right Cessation
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007135753A1 (ja) * | 2006-05-19 | 2007-11-29 | Tetsuo Sakaki | ウエハのシリコン層の探傷装置及び探傷方法 |
JP2011133383A (ja) * | 2009-12-25 | 2011-07-07 | Nishi Nippon Electric Wire & Cable Co Ltd | 2次元ベクトル磁気測定装置 |
WO2020032040A1 (ja) * | 2018-08-06 | 2020-02-13 | 東芝エネルギーシステムズ株式会社 | 渦電流探傷装置および渦電流探傷方法 |
JP2020024097A (ja) * | 2018-08-06 | 2020-02-13 | 東芝エネルギーシステムズ株式会社 | 渦電流探傷装置および渦電流探傷方法 |
US11598750B2 (en) | 2018-08-06 | 2023-03-07 | Toshiba Energy Systems & Solutions Corporation | Eddy current flaw detection device and eddy current flaw detection method |
JP7301506B2 (ja) | 2018-08-06 | 2023-07-03 | 東芝エネルギーシステムズ株式会社 | 渦電流探傷装置および渦電流探傷方法 |
WO2020065875A1 (ja) * | 2018-09-27 | 2020-04-02 | 日本製鉄株式会社 | 渦電流を利用した材質異常部検知方法および材質異常部検知装置 |
KR20210040445A (ko) * | 2018-09-27 | 2021-04-13 | 닛폰세이테츠 가부시키가이샤 | 와전류를 이용한 재질 이상부 검지 방법 및 재질 이상부 검지 장치 |
CN112740025A (zh) * | 2018-09-27 | 2021-04-30 | 日本制铁株式会社 | 利用涡电流的材质异常部检知方法以及材质异常部检知装置 |
JPWO2020065875A1 (ja) * | 2018-09-27 | 2021-08-30 | 日本製鉄株式会社 | 渦電流を利用した材質異常部検知方法および材質異常部検知装置 |
JP7103423B2 (ja) | 2018-09-27 | 2022-07-20 | 日本製鉄株式会社 | 渦電流を利用した材質異常部検知方法および材質異常部検知装置 |
KR102508695B1 (ko) * | 2018-09-27 | 2023-03-14 | 닛폰세이테츠 가부시키가이샤 | 와전류를 이용한 재질 이상부 검지 방법 및 재질 이상부 검지 장치 |
Also Published As
Publication number | Publication date |
---|---|
MY143920A (en) | 2011-07-29 |
WO2004029606A1 (en) | 2004-04-08 |
TWI230394B (en) | 2005-04-01 |
TW200410298A (en) | 2004-06-16 |
KR100921358B1 (ko) | 2009-10-14 |
EP1543316A1 (en) | 2005-06-22 |
KR20050070001A (ko) | 2005-07-05 |
US7084621B2 (en) | 2006-08-01 |
US20040058545A1 (en) | 2004-03-25 |
JP4350041B2 (ja) | 2009-10-21 |
AU2003267272A1 (en) | 2004-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4350041B2 (ja) | 渦電流ベースの測定性能 | |
US11680996B2 (en) | Methods and apparatus for magnetic sensor having integrated coil | |
CN101479611B (zh) | 感应等离子处理室中失限态的方法和设备 | |
US6905578B1 (en) | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure | |
KR101271843B1 (ko) | 스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법 | |
WO1999055932A1 (en) | Apparatus and method for multi-target physical vapor deposition | |
EP2184380A1 (en) | Dry etching method for magnetic material | |
JP2013080748A (ja) | 磁気メモリ及びその製造方法 | |
Petersen et al. | Review of electrical characterization of ultra-shallow junctions with micro four-point probes | |
US8072711B1 (en) | System and method for the fabrication, characterization and use of magnetic corrosion and chemical sensors | |
JP2006511801A (ja) | 相補的なセンサを用いた測定処理制御のための方法および装置 | |
JP2006500590A5 (ja) | ||
KR101051909B1 (ko) | 와전류를 이용하여 박막 기판신호를 분리하는 시스템, 방법및 장치 | |
Su et al. | Easy‐Cone Magnetic State Induced Ultrahigh Sensitivity and Low Driving Current in Spin‐Orbit Coupling 3D Magnetic Sensors | |
JP2009002838A (ja) | 検出装置及び検出方法 | |
US7242185B1 (en) | Method and apparatus for measuring a conductive film at the edge of a substrate | |
US5618738A (en) | Manufacturing method for magnetoresistance elements | |
JP2012064675A (ja) | スピン波装置 | |
Zhang | Current-induced dynamics of easy-plane antiferromagnets | |
JP2005503034A (ja) | 磁気抵抗記憶セルの記憶層におけるバイアス磁界の補償 | |
JPWO2013190924A1 (ja) | 半導体装置及びその製造方法 | |
US20210125881A1 (en) | Thickness sensor for conductive features | |
Obeid et al. | Eddy current testing for detecting small defects in thin films | |
JP2005268349A (ja) | 反応性イオンエッチング方法および反応性イオンエッチング装置 | |
Huminiuc | Novel Antiferromagnets for Spintronic Devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060913 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060913 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090216 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090608 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090630 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090721 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120731 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4350041 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120731 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130731 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |