JP2006339635A - エッチング組成物 - Google Patents

エッチング組成物 Download PDF

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Publication number
JP2006339635A
JP2006339635A JP2006138377A JP2006138377A JP2006339635A JP 2006339635 A JP2006339635 A JP 2006339635A JP 2006138377 A JP2006138377 A JP 2006138377A JP 2006138377 A JP2006138377 A JP 2006138377A JP 2006339635 A JP2006339635 A JP 2006339635A
Authority
JP
Japan
Prior art keywords
etching
film
etching composition
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006138377A
Other languages
English (en)
Japanese (ja)
Inventor
Ki Beom Lee
イ，キボム
Sam Young Cho
チョ，サムヨン
Hyun Cheol Shin
シン，ヒュンチョル
Nam Seo Kim
キム，ナムソ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of JP2006339635A publication Critical patent/JP2006339635A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
JP2006138377A 2005-05-30 2006-05-18 エッチング組成物 Pending JP2006339635A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050045545A KR101216651B1 (ko) 2005-05-30 2005-05-30 에칭 조성물

Publications (1)

Publication Number Publication Date
JP2006339635A true JP2006339635A (ja) 2006-12-14

Family

ID=37483648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006138377A Pending JP2006339635A (ja) 2005-05-30 2006-05-18 エッチング組成物

Country Status (4)

Country Link
JP (1) JP2006339635A (zh)
KR (1) KR101216651B1 (zh)
CN (1) CN1873054B (zh)
TW (1) TW200706701A (zh)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007150107A (ja) * 2005-11-29 2007-06-14 Lg Phillips Lcd Co Ltd 薄膜トランジスタ液晶表示装置用エッチング組成物
JP2007305996A (ja) * 2006-05-10 2007-11-22 Dongjin Semichem Co Ltd 薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法。
JP2009076910A (ja) * 2007-09-18 2009-04-09 Dongjin Semichem Co Ltd Ｔｆｔ−ｌｃｄ用金属配線形成のためのエッチング液組成物
JP2009206488A (ja) * 2007-12-07 2009-09-10 Dongjin Semichem Co Ltd 薄膜トランジスタ液晶表示装置用金属配線形成のためのエッチング液組成物
JP2009218601A (ja) * 2009-03-19 2009-09-24 Lg Display Co Ltd 薄膜トランジスタ液晶表示装置用エッチング組成物
WO2010082439A1 (ja) * 2009-01-16 2010-07-22 三洋半導体製造株式会社 エッチング液組成物
US9290695B2 (en) 2013-04-19 2016-03-22 Joled Inc Method for manufacturing a thin-film semiconductor device using an etching solution for an aluminum oxide film
US10096486B2 (en) 2016-02-02 2018-10-09 Toshiba Memory Corporation Substrate processing apparatus, substrate processing method and substrate processing liquid
JP2019031499A (ja) * 2013-07-04 2019-02-28 ローディア オペレーションズ スルホニルハライド化合物をフッ素化するための方法
CN113529084A (zh) * 2021-06-09 2021-10-22 昆山晶科微电子材料有限公司 一种用于TFT-array基片的蚀刻液
JP7504081B2 (ja) 2018-09-12 2024-06-21 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323458B1 (ko) * 2007-06-15 2013-10-29 동우 화인켐 주식회사 은 식각액 조성물
KR101805187B1 (ko) * 2009-10-30 2017-12-06 동우 화인켐 주식회사 식각액 조성물
KR20160108944A (ko) * 2015-03-09 2016-09-21 동우 화인켐 주식회사 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
CN106618617B (zh) * 2015-10-30 2021-12-21 通用电气公司 X射线探测器及其制造方法
CN110129797A (zh) * 2019-04-08 2019-08-16 江苏中德电子材料科技有限公司 一种钼铝钼的兼容蚀刻液
CN114507859A (zh) * 2021-12-06 2022-05-17 福建中安高新材料研究院有限公司 一种蚀刻液及其制备方法、金属膜材处理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985620B2 (ja) 2001-07-23 2007-10-03 ソニー株式会社 エッチング方法
CN100350570C (zh) * 2001-10-22 2007-11-21 三菱瓦斯化学株式会社 铝/钼层叠膜的蚀刻方法
TWI245071B (en) * 2002-04-24 2005-12-11 Mitsubishi Chem Corp Etchant and method of etching
JP4478383B2 (ja) * 2002-11-26 2010-06-09 関東化学株式会社 銀を主成分とする金属薄膜のエッチング液組成物

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007150107A (ja) * 2005-11-29 2007-06-14 Lg Phillips Lcd Co Ltd 薄膜トランジスタ液晶表示装置用エッチング組成物
JP2007305996A (ja) * 2006-05-10 2007-11-22 Dongjin Semichem Co Ltd 薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法。
JP2009076910A (ja) * 2007-09-18 2009-04-09 Dongjin Semichem Co Ltd Ｔｆｔ−ｌｃｄ用金属配線形成のためのエッチング液組成物
JP2009206488A (ja) * 2007-12-07 2009-09-10 Dongjin Semichem Co Ltd 薄膜トランジスタ液晶表示装置用金属配線形成のためのエッチング液組成物
WO2010082439A1 (ja) * 2009-01-16 2010-07-22 三洋半導体製造株式会社 エッチング液組成物
JP2010163661A (ja) * 2009-01-16 2010-07-29 Sanyo Handotai Seizo Kk エッチング液組成物
JP2009218601A (ja) * 2009-03-19 2009-09-24 Lg Display Co Ltd 薄膜トランジスタ液晶表示装置用エッチング組成物
US9290695B2 (en) 2013-04-19 2016-03-22 Joled Inc Method for manufacturing a thin-film semiconductor device using an etching solution for an aluminum oxide film
JP2019031499A (ja) * 2013-07-04 2019-02-28 ローディア オペレーションズ スルホニルハライド化合物をフッ素化するための方法
US10096486B2 (en) 2016-02-02 2018-10-09 Toshiba Memory Corporation Substrate processing apparatus, substrate processing method and substrate processing liquid
JP7504081B2 (ja) 2018-09-12 2024-06-21 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
CN113529084A (zh) * 2021-06-09 2021-10-22 昆山晶科微电子材料有限公司 一种用于TFT-array基片的蚀刻液

Also Published As

Publication number Publication date
TW200706701A (en) 2007-02-16
KR101216651B1 (ko) 2012-12-28
KR20060123898A (ko) 2006-12-05
CN1873054B (zh) 2010-04-14
CN1873054A (zh) 2006-12-06

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