JP2006339630A5 - - Google Patents

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Publication number
JP2006339630A5
JP2006339630A5 JP2006125697A JP2006125697A JP2006339630A5 JP 2006339630 A5 JP2006339630 A5 JP 2006339630A5 JP 2006125697 A JP2006125697 A JP 2006125697A JP 2006125697 A JP2006125697 A JP 2006125697A JP 2006339630 A5 JP2006339630 A5 JP 2006339630A5
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JP
Japan
Prior art keywords
laser
lens
laser beam
slit
irradiation
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Application number
JP2006125697A
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English (en)
Japanese (ja)
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JP2006339630A (ja
JP5153086B2 (ja
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Priority to JP2006125697A priority Critical patent/JP5153086B2/ja
Priority claimed from JP2006125697A external-priority patent/JP5153086B2/ja
Publication of JP2006339630A publication Critical patent/JP2006339630A/ja
Publication of JP2006339630A5 publication Critical patent/JP2006339630A5/ja
Application granted granted Critical
Publication of JP5153086B2 publication Critical patent/JP5153086B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006125697A 2005-05-02 2006-04-28 レーザ照射装置 Expired - Fee Related JP5153086B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006125697A JP5153086B2 (ja) 2005-05-02 2006-04-28 レーザ照射装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133788 2005-05-02
JP2005133788 2005-05-02
JP2006125697A JP5153086B2 (ja) 2005-05-02 2006-04-28 レーザ照射装置

Publications (3)

Publication Number Publication Date
JP2006339630A JP2006339630A (ja) 2006-12-14
JP2006339630A5 true JP2006339630A5 (enExample) 2009-05-28
JP5153086B2 JP5153086B2 (ja) 2013-02-27

Family

ID=37559870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006125697A Expired - Fee Related JP5153086B2 (ja) 2005-05-02 2006-04-28 レーザ照射装置

Country Status (1)

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JP (1) JP5153086B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3997890B2 (ja) 2001-11-13 2007-10-24 松下電器産業株式会社 送信方法及び送信装置
JP4904169B2 (ja) * 2007-01-12 2012-03-28 古河電気工業株式会社 線条表面検査装置
US20090046757A1 (en) * 2007-08-16 2009-02-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
US8014427B1 (en) 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
WO2015051854A1 (en) * 2013-10-11 2015-04-16 Wavelight Gmbh Diagnosis system and diagnosis method
JP6885099B2 (ja) * 2017-02-23 2021-06-09 大日本印刷株式会社 表示装置の製造方法および光照射装置
JP2018195676A (ja) * 2017-05-16 2018-12-06 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5864430A (en) * 1996-09-10 1999-01-26 Sandia Corporation Gaussian beam profile shaping apparatus, method therefor and evaluation thereof
JP2000066133A (ja) * 1998-06-08 2000-03-03 Sanyo Electric Co Ltd レ―ザ―光照射装置
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
JP4223470B2 (ja) * 2004-12-03 2009-02-12 株式会社半導体エネルギー研究所 ピッチｘの決定方法、半導体装置の作製方法

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