JP2006339369A - Manufacturing method of wafer level airtight package, and airtight package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer level airtight package, as well as an airtight package, capable of surely keeping airtightness and capable of suppressing occurrence of chipping at cutting. <P>SOLUTION: The manufacturing method of a wafer level airtight package includes a process for preparing a wafer level airtight package preliminary body equipped with an element side substrate 4 on which a plurality of elements are mounted in array, a lid side substrate 3 arranged opposite to the mounting surface side of the element side substrate 4, and a plurality of jointing materials 5 that are arranged in array between the lid substrate 3 and the element side substrate 4 to enclose one or more elements 7, respectively, for airtight sealing. It also includes a process for packing a filling material 1 on the outer peripheral side of the jointing material 5 of the wafer level airtight package preliminary body. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a wafer level hermetic package for hermetically sealing an element and an hermetic package.

In recent years, airtight packages using micromachining technology have been proposed. Patent Document 1 discloses an example of the hermetic package. The hermetic package disclosed in Patent Document 1 includes a substrate, a device formed on the substrate, wiring, and a cap made of metal or semiconductor. And the board | substrate side junction part formed in a board | substrate and the cap side junction part formed in a cap are comprised with the metal. A space between the substrate side bonding portion and the cap side bonding portion is sealed with AuSn solder.
JP 2004-202604 A

  As described above, in the package described in Patent Document 1, the space between the substrate side joint and the cap side joint is sealed with AuSn solder. Since this AuSn solder has a higher melting point than lead solder or lead-free solder, a soldering process can be performed after packaging. However, if the AuSn solder is softened when heated in the soldering process, the airtightness may be broken.

  Moreover, after performing hermetic sealing at the wafer level, if the portion where the two are not bonded is cut, chipping may occur at the edge of the wafer. When chipping occurs on the wafer, there is a problem that the strength of the package is lowered.

  The present invention has been made to solve the above-described problem, and can provide a method for producing a wafer-level hermetic package that can reliably maintain hermeticity and that can suppress the occurrence of chipping during cutting. The aim is to provide an airtight package.

  According to the method for manufacturing a wafer-level hermetic package based on the present invention, a first wafer on which a plurality of elements are mounted in an array, and a second wafer arranged to face the mounting surface side of the first wafer, A wafer level hermetic package comprising a plurality of bonding materials disposed in an array between the first wafer and the second wafer, each of which encloses one or a plurality of the elements and hermetically seals them. A step of preparing a preparation, and a step of filling a filler on the outer peripheral side of the bonding material of the wafer level hermetic package preparation.

  According to an airtight package based on the present invention, an element side substrate on which an element is mounted, a lid side substrate disposed to face a mounting surface of the element side substrate, and the element side substrate so as to surround the element And a bonding material disposed between the lid-side substrate and hermetically sealing the element, and a filler filled between the outer peripheral side of the bonding material and the element-side substrate and the lid-side substrate; It has.

  According to the method for manufacturing a wafer level hermetic package and the hermetic package according to the present invention, the hermeticity can be reliably maintained, and the occurrence of chipping during the manufacturing of the hermetic package can be suppressed.

  Hereinafter, a method for manufacturing a wafer level hermetic package and a structure of the hermetic package in each embodiment based on the present invention will be described with reference to the drawings. In each embodiment, the same or corresponding parts are denoted by the same reference numerals, and redundant description will not be repeated.

(Embodiment 1)
Embodiment 1 according to the present invention will be described with reference to FIGS. 1 is a plan view showing the structure of the wafer level hermetic package in the present embodiment, FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1, and FIG. 3 shows the structure of the hermetic package. It is a longitudinal cross-sectional view shown.

  As shown in FIGS. 1 and 2, the wafer level hermetic package of the present embodiment is arranged so as to face the element side substrate 4 in which the elements 7 are arranged in an array and the mounting surface of the element side substrate 4. And a lid side substrate 3. As the element side substrate 4 and the lid side substrate 3, various substrates such as a Si substrate, a glass substrate, a SiC substrate, and a GaAs substrate can be used. The element 7 is merely an example, but an element constituting an RF-MEMS (Micro Electro Mechanical Systems) switch, an infrared sensor, or the like can be used. Further, in the following description, the case where one element 7 is arranged in each hermetic package will be described, but a plurality of elements 7 may be arranged in each hermetic package.

  On the inner surfaces of the element side substrate 4 and the lid side substrate 3, a metal layer 6 extending in a quadrangular shape is provided so as to surround the element 7. Since the metal layer 6 joins the solder and the substrate, in the present embodiment, from the substrate side, the Cr layer that strengthens the adhesion to the substrate, the Ni layer that joins the solder and forms an alloy, and It is composed of an Au layer that prevents oxidation of Ni. The layer that strengthens the adhesion may be a Ti layer. The layer to be joined to the solder may be any material such as a Cu layer, Fe layer, Fe—Ni layer, Pt layer, Pd layer, or Ag layer as long as it can be joined to the solder. Further, the shape of the metal layer 6 is not limited to a quadrangle, and various shapes can be used as necessary.

  A bonding material 5 made of solder is provided between the metal layers 6 and 6 of the element side substrate 4 and the lid side substrate 3 facing each other, whereby the element 7 is hermetically sealed. Various solders can be applied as the bonding material 5. For example, it may be lead-containing solder, lead-free solder such as Sn—Cu, Sn—Ag, or Sn—Ag—Cu, or AuSn. The bonding material 5 is not limited to solder, and any material may be used as long as it is a metal-based sealing material.

  The metal layer 6 surrounding the element 7 and the bonding material 5 are also arranged in an array as shown in FIG. Here, although it arrange | positions at 3x3 matrix form, it is not limited to this. What is necessary is just to arrange and arrange | position so that it can cut into an individual airtight package later.

  Filler 1 is filled in the gaps between the plurality of bonding materials 5 provided. The filler 1 is a thermosetting resin such as an epoxy resin, a silicone resin, a phenol resin, or a polyimide resin, and may be any material as long as it is a resin suitable for sealing.

  Since the wafer level hermetic package of the present embodiment has the above-described structure, the element side substrate 4 and the lid side are cut in the process of cutting along the cutting line indicated by the broken line 2 to separate into individual hermetic packages. The filler 1 is located on both inner surface sides of the substrate 3. In the process of cutting the wafer level hermetic package, a blade with a diamond particle thickness of about 0.05 mm is used, but even if such a thin blade is used, the blade passes through the cavity. Since there is nothing, the tip of the blade is less likely to shake. As a result, chipping of the element side substrate 4 and the lid side substrate 3 can be suppressed.

  Further, the hermetic package after the separation has a structure as shown in FIG. 3, and the filler 1 is located on the outer peripheral side of the bonding material 5. Thus, even when the bonding material 5 is softened or melted by being heated in a later soldering process or the like, the inner airtightness can be maintained by the filler 1.

  Next, a method for manufacturing the wafer level hermetic package of the present embodiment will be described. First, the element side substrate 4 in which the element 7 and the metal layer 6 surrounding the element 7 are arranged in an array form, and the lid side substrate 3 in which the metal layer 6 is provided at a position corresponding to the metal layer 6 of the element side substrate 4. And prepare.

  Solder to be the bonding material 5 is mounted on one or both of the metal layer 6 of the element side substrate 4 and the metal layer 6 of the lid side substrate 3. As a method for mounting the solder, various methods such as plating, printing, preform, and a molten metal discharge method can be used.

  The element side substrate 4 and the lid side substrate 3 are supplied to a vacuum sealing device, and solder reflow is performed under high vacuum. After the solder is remelted, the element-side substrate 4 and the lid-side substrate 3 are overlapped and bonded together with the bonding material 5. This completes a wafer level hermetic package preparation that is sealed in a high vacuum state.

  Subsequently, the wafer level hermetic package preparation is immersed in a resin material to be the filler 1 so that the filler 1 is filled in the gap between the bonding materials 5 and 5. If the fillability is poor simply by dipping, the filler 1 can be filled without generating voids by evacuation with a vacuum pump after dipping.

  By curing the filled filler 1, a wafer level hermetic package is completed. By cutting this wafer level hermetic package with a blade, an airtight package in which the outer peripheral side of the bonding material 5 is filled with the filler 1 can be manufactured.

  Next, a structure for electrically connecting the hermetic package to the outside will be described. 4 is a longitudinal cross-sectional view showing a structure connected through a through wiring, FIG. 5 is a plan view showing a structure connected using a feedthrough wiring, and FIG. FIG. 7 is a sectional view taken along the arrow VI, and FIG. 7 is a front view thereof.

  In the airtight package shown in FIG. 4, the through wiring 11 is provided on the element side substrate 4. The upper end side of the through wiring 11 is electrically connected to the element 7 by a wire such as a wire or a conductive sheet (not shown). The through wiring 11 may be provided directly below the element 7 and connected by BGA (Ball Grid Array).

  A lower end of the through wiring 11 is connected to a wiring (not shown) on the mounting substrate 12 by a solder ball 10. The hermetic package is also fixed to the mounting substrate 12 by the underfill resin 9. By adopting such a connection structure using the through wiring 11, the hermetic package can be mounted on the mounting substrate 12 with a small mounting area.

  In the hermetic package shown in FIGS. 5 to 7, a feedthrough electrode 16 is provided in advance on the element side substrate 4, and can be electrically connected to the outside through the feedthrough electrode 16. The top and side surfaces of the feedthrough electrode 16 are surrounded and insulated by the insulating layer 15. As shown in FIGS. 6 and 7, the metal layer 6 is provided on the upper surface of the insulating layer 15.

  When the wafer level hermetic package provided with the feedthrough electrode 16 is cut into the hermetic package, it is cut in two stages. That is, first, a relatively thick blade is used to cut the feedthrough electrode 16 to a thickness that does not cut the feedthrough electrode 16. Subsequently, the wafer level hermetic package is cut into airtight packages using a thin blade. Thereby, an airtight package in which the tip of the feedthrough electrode 16 protrudes from the airtight package body can be manufactured. 5 to 7, the element-side substrate 4 has a structure protruding in the four directions on the outer peripheral side. However, the structure is arbitrary, and it is not always necessary to form such a structure. The wiring structure described here can also be applied to each embodiment described below.

  In the above description, the case where the wafer level hermetic package is separated and the hermetic package is manufactured has been described, but it is not always necessary to manufacture such a hermetic package. That is, the element side substrate 4 and the lid side substrate 3 that have been cut in the size of the hermetic package in advance may be sealed together with the bonding material 5, and the outer peripheral side of the bonding material 5 may be filled with the filler 1. . This also applies to each embodiment described below.

  Also in the airtight package manufactured in this way, the effect that the airtightness is improved by the filler 1 can be obtained in the same manner as the airtight package manufactured by cutting the wafer level airtight package.

(Embodiment 2)
Next, a second embodiment will be described with reference to FIGS. FIG. 8 is a longitudinal sectional view of the wafer level hermetic package of the present embodiment, and FIG. 9 is a longitudinal sectional view of the hermetic package.

  In the present embodiment, only the lid-side substrate 3 of the wafer level hermetic package preparation described in the first embodiment is cut along the cutting line indicated by the broken line 2, and thereafter, between the bonding materials 5 and 5. Filler 1 is filled. By cutting the lid-side substrate 3 with a relatively wide blade, a flow path for filling the filler 1 from the lid-side substrate 3 side can be formed. As an example, a blade having a thickness of about 0.2 mm can be used.

  In this structure, since the filler 1 is filled after the lid-side substrate 3 is cut to form a wide flow path, the filler 1 can be filled not only from the end portion but also from the gap of the lid-side substrate 3. Thereby, filling efficiency improves.

  Further, since a wide flow path is ensured when the filler 1 is filled, it is possible to use the filler 1 having a high viscosity mixed with the filler, and the linear expansion coefficient of the filler 1 is set to the element side substrate 4 and The linear expansion coefficient of the lid side substrate 3 can be approached.

As the filler, for example, a silica filler can be used. When the substrate is a silicon substrate, the linear expansion coefficient α is about α = 3.5 ppm (3.5 × 10 ⁻⁷ 1 / K). The linear expansion coefficient α of the epoxy resin is usually about α = 50 to 60 ppm. However, when silica filler having a diameter of 10 μm is mixed with 50 wt% of the epoxy resin, α decreases to α = 30 ppm and mixed with 80 to 90 wt%. When α is set, α decreases to α = 10 ppm. By using the filler mixed with such a filler, the linear expansion coefficient of the substrate and the linear expansion coefficient of the filler are close to each other, so that an airtight package resistant to temperature changes can be configured.

  When the wafer level hermetic package shown in FIG. 8 is cut along a cutting line indicated by a broken line 2 and separated into individual hermetic packages, an airtight package as shown in FIG. 9 is obtained. In this hermetic package, the filler 1 is provided so as to cover the outer periphery of the lid side substrate 3. Thereby, since the outer peripheral side of the boundary part (indicated by an arrow in FIG. 9) between the lid-side substrate 3 and the filler 1 is covered with the filler 1, it is possible to make it difficult to generate a crack in the boundary part.

  In the present embodiment, only the lid side substrate 3 is cut, but conversely, only the element side substrate 4 may be cut.

(Embodiment 3)
Next, Embodiment 3 will be described with reference to FIG. 10 and FIG. FIG. 10 is a longitudinal sectional view of the wafer level hermetic package of the present embodiment, and FIG. 11 is a longitudinal sectional view of the hermetic package.

  In the present embodiment, only the lid-side substrate 3 of the wafer-level hermetic package preparation described in the first embodiment is cut at the position indicated by the broken line 2 and then filled between the bonding materials 5 and 5. Fill material 1 and cure. Thereafter, the element side substrate 4 is also cut at a position indicated by a broken line 2, and the filler 1 is filled in the cut portion.

  When the wafer level hermetic package of the present embodiment is cut at the position of the broken line 2 and separated into individual hermetic packages, an airtight package having a structure as shown in FIG. 11 can be manufactured. In this hermetic package, the boundary portion between the element side substrate 4 and the filler 1 and the side surface side of the boundary portion between the lid side substrate 3 and the filler 1 indicated by arrows in FIG. The occurrence of cracks at both boundary portions can be suppressed.

(Embodiment 4)
Next, Embodiment 4 will be described with reference to FIG. 12 and FIG. FIG. 12 is a longitudinal sectional view showing the structure of the wafer level hermetic package of the present embodiment, and FIG. 13 is a longitudinal sectional view showing the structure of the hermetic package.

  In the present embodiment, only the lid side substrate 3 of the wafer level hermetic package preparation described in the first embodiment is cut at the position indicated by the broken line 2 and at the same time, the inner surface side of the element side substrate 4 is half cut. ing. Here, the half-cut means that the cut is made so as not to cut completely but leave a continuous part.

  Thereafter, the filler 1 is filled between the bonding materials 5 and 5, and the wafer level hermetic package shown in FIG. 12 is completed. At this time, the filler 1 is also filled in the groove portion of the element-side substrate that has been half cut.

  When the wafer level hermetic package of the present embodiment is cut along a cutting line indicated by a broken line 2 and separated into individual hermetic packages, an airtight package having a structure as shown in FIG. 13 can be manufactured. In this hermetic package, the outer peripheral surface of the lid side substrate 3 is covered with the filler 1. Further, the filler 1 is also filled in a notch portion formed on the inner surface side of the outer peripheral portion of the element side substrate 4 formed by half-cutting. As a result, both the boundary portion between the element side substrate 4 and the filler 1 and the side surface side of the boundary portion between the lid side substrate 3 and the filler 1 shown by arrows in FIG. 13 are covered with the filler 1. Generation of cracks at the boundary portion can be suppressed.

  Furthermore, in the fourth embodiment, as in the third embodiment, it is not necessary to cut the wafer level hermetic package from both sides of the lid side substrate 3 and the element side substrate 4, and it is only necessary to cut from either one. The increase in the manufacturing process can be minimized, and the cost can be reduced.

(Embodiment 5)
Next, a fifth embodiment will be described with reference to FIG. FIG. 14 is a longitudinal sectional view showing the structure of the wafer level hermetic package of the present embodiment.

  In the embodiment shown in FIG. 14, the lid side substrate 3 provided with the depression 8 on the inner surface is used. The recess 8 is provided on the ceiling of each space portion of the wafer level hermetic package, that is, on the surface facing the element 7, and enlarges the internal space of each hermetic package. For example, when the lid-side substrate 3 is a silicon substrate, the recess 8 can be formed by wet etching using an etchant such as KOH or TMAH after the metal layer 6 is formed.

  The internal space of the hermetic package can be expanded without increasing the thickness of the bonding material 5. Accordingly, it is possible to deal with a case where the thickness is large, such as a case where the element 7 is formed of stacked chips.

(Embodiment 6)
Next, Embodiment 6 will be described with reference to FIG. FIG. 15 is a longitudinal sectional view showing the structure of the wafer level hermetic package of the present embodiment.

  In the embodiment shown in FIG. 15, similar to the wafer level hermetic package shown in the fifth embodiment, a recess 8 is provided so as to expand the internal space of each hermetic package, and the filler 1 is filled. A recess is also provided in a gap portion between the bonding materials 5 and 5.

  The filler 1 is filled after the gap between the element side substrate 4 and the lid side substrate 3 is sealed with the bonding material 5 through the metal layer 6. Thereby, the cross-sectional area of the gap filling the filler 1 is increased, and the filler 1 can be easily filled.

(Embodiment 7)
Next, Embodiment 7 will be described with reference to FIG. FIG. 16 is a longitudinal sectional view showing the structure of the wafer level hermetic package of the present embodiment.

  In the embodiment shown in FIG. 16, similarly to the wafer level hermetic package shown in the sixth embodiment, the recess 8 is provided so as to expand the internal space of each hermetic package, and the bonding material filled with the filler 1 is provided. A recess is also provided in a gap portion between 5 and 5.

  Furthermore, in the seventh embodiment, before filling with the filler 1, only the lid-side substrate 3 is cut along a cutting line indicated by a broken line 2. By cutting the lid-side substrate 3 with a relatively wide blade, a flow path for filling the filler 1 from the lid-side substrate 3 side can be formed. As an example, a blade having a thickness of about 0.2 mm can be used.

  In this structure, since the filler 1 is filled after the lid-side substrate 3 is cut to form a wide flow path, the filler 1 can be filled not only from the end portion but also from the gap of the lid-side substrate 3. Thereby, filling efficiency further improves.

  Further, since a wide flow path is ensured when the filler 1 is filled, it is possible to use the filler 1 having a high viscosity mixed with the filler, and the linear expansion coefficient of the filler 1 is set to the element side substrate 4 and The linear expansion coefficient of the lid side substrate 3 can be approached. As a result, an airtight package resistant to temperature changes can be configured.

  When the wafer level hermetic package of the present embodiment is cut at the position of the broken line 2 and separated into individual hermetic packages, the side surface side of the boundary portion between the lid side substrate 3 and the filler 1 is covered with the filler. In addition, it is possible to prevent the crack from progressing at this boundary portion.

(Embodiment 8)
Next, an eighth embodiment will be described with reference to FIG. FIG. 17 is a longitudinal sectional view showing the wafer level hermetic package of the present embodiment.

  In the present embodiment, the element side substrate 4 of the wafer level hermetic package described in the seventh embodiment is also cut at a position indicated by a broken line 2 and the cut material is filled with the filler 1.

  When the wafer level hermetic package of the present embodiment is cut at the position of the broken line 2 and separated into individual hermetic packages, the boundary between the element side substrate 4 and the filler 1 and the lid side substrate 3 and the filler 1 are separated. Both side surfaces of the boundary portion are covered with the filler 1. Thereby, in addition to the effect demonstrated in Embodiment 7, the effect that generation | occurrence | production of the crack in both these boundary parts can be suppressed is acquired.

(Embodiment 9)
Next, Embodiment 9 will be described with reference to FIG. FIG. 18 is a longitudinal sectional view showing the wafer level hermetic package of the present embodiment.

  In the present embodiment, in the process of cutting only the lid-side substrate 3 at the position indicated by the broken line 2 described in the seventh embodiment, the inner surface side of the element-side substrate 4 is simultaneously half-cut.

  After this step, the filler 1 is filled between the bonding materials 5 and 5, and the wafer level hermetic package shown in FIG. 12 is manufactured. At this time, the filler 1 is also filled into the half-cut groove portion of the element side substrate.

  When the wafer level hermetic package of the present embodiment is cut along a cutting line indicated by a broken line 2 and separated into individual hermetic packages, the boundary between the element side substrate 4 and the filler 1 and the lid side substrate 3 and the filler 1 are separated. Since both of the side surfaces of the boundary portion are covered with the filler 1, the occurrence of cracks at both boundary portions can be suppressed.

  Further, in the ninth embodiment, it is not necessary to cut the wafer level hermetic package from both sides of the lid side substrate 3 and the element side substrate 4 as in the eighth embodiment. Therefore, an increase in the manufacturing process can be minimized and cost reduction can be realized.

  In addition, the said embodiment disclosed this time is an illustration in all the points, Comprising: It does not become the basis of limited interpretation. Therefore, the technical scope of the present invention is not interpreted only by the above-described embodiments, but is defined based on the description of the claims. Further, all modifications within the meaning and scope equivalent to the scope of the claims are included.

It is a top view which shows the structure of the wafer level airtight package in Embodiment 1 based on this invention. FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1 showing the structure of the wafer level hermetic package in the first embodiment based on the present invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 1 based on this invention. It is a longitudinal cross-sectional view which shows the structure which connects the airtight package in Embodiment 1 based on this invention through a penetration wiring. It is a top view which shows the structure which connects the airtight package in Embodiment 1 based on this invention using feedthrough wiring. FIG. 6 is a cross-sectional view taken along arrow VI-VI in FIG. 5, showing a structure for connecting the airtight package according to the first embodiment based on the present invention using feedthrough wiring. It is a front view which shows the structure which connects the airtight package in Embodiment 1 based on this invention using feedthrough wiring. It is a longitudinal cross-sectional view which shows the structure of the wafer level airtight package in Embodiment 2 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 2 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the wafer level airtight package in Embodiment 3 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 3 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the wafer level airtight package in Embodiment 4 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 4 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 5 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 6 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 7 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 8 based on this invention. It is a longitudinal cross-sectional view which shows the structure of the airtight package in Embodiment 9 based on this invention.

Explanation of symbols

  1 filler, 3 lid side substrate, 4 element side substrate, 5 bonding material, 6 metal layer, 7 element.

Claims (8)

A first wafer on which a plurality of elements are mounted in an array, a second wafer disposed opposite to the mounting surface of the first wafer, and an array between the first wafer and the second wafer Preparing a wafer level hermetic package preparation body, each comprising a plurality of bonding materials disposed in a shape and hermetically sealing each one or a plurality of the elements, and
Filling the outer peripheral side of the bonding material of the wafer level hermetic package preparation with a filler. A cutting step of cutting one of the first wafer and the second wafer of the wafer level hermetic package preparation at a position corresponding to a gap between the plurality of bonding materials;
The method for manufacturing a wafer level hermetic package according to claim 1, wherein a filler is filled on an outer peripheral side of the plurality of bonding materials after the cutting step.   After filling the outer peripheral side of the plurality of bonding materials through the cutting step, the first wafer or the second wafer not cut in the cutting step corresponds to the gap between the plurality of bonding materials. The method for manufacturing a wafer level hermetic package according to claim 2, further comprising a step of cutting at a position to be cut and filling the cut portion with a filler. Cutting one of the first wafer or the second wafer of the wafer level hermetic package preparation at a position corresponding to the gap between the plurality of bonding materials and half-cutting the other inner surface side;
The method of manufacturing a wafer level hermetic package according to claim 1, wherein a filler is filled on an outer peripheral side of the plurality of bonding materials after the step. An element side substrate on which the element is mounted;
A lid-side substrate disposed opposite the mounting surface of the element-side substrate;
A bonding material disposed between the element side substrate and the lid side substrate so as to surround the element, and hermetically sealing the element;
An airtight package comprising an outer peripheral side of the bonding material and a filler filled between the element side substrate and the lid side substrate.   The hermetic package according to claim 5, wherein the filler covers one outer peripheral surface of the element side substrate and the lid side substrate.   The hermetic package according to claim 5, wherein the filler covers outer peripheral surfaces of both the element side substrate and the lid side substrate. A notch is provided on the inner surface side of the outer peripheral portion of the element side substrate or the lid side substrate, and the filler is also filled in the notch,
The hermetic package according to claim 5, wherein the filler also covers an outer peripheral surface of the element side substrate or the lid side substrate not provided with the notch.

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