JP2008124161A - Electronic apparatus housing package and method of manufacturing electronic apparatus housing package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem in which when an electronic apparatus housing space 7 is formed by joining a substrate 2 and a lid 3 by use of a ring-like frame member, the height of the frame member is hardly reformed since the structure of the frame member is an integrated structure surrounding the space 7, a gap between the substrate 2 and the lid 3 and the height of the space 7 are unstable, the stable operation of an electronic apparatus cannot be secured, and joint strength between the substrate 2 and the lid 3 are also unstable. <P>SOLUTION: On any one of the substrate 2 and a lid 3, a plurality of pillar-shaped metal bumps 4 are formed. On the other of them, a plurality of island-shaped metal joint films 5 larger than the metal bump 4 are formed. The heat pressurization of both bumps is performed. Thus, the size in a direction seen from the side surface of the joint portion of the substrate 2 and the lid 3 can be easily corrected, the gap and the height of the space 7 do not vary, the operation of an electronic apparatus arranged in the space 7 is stable, and joint strength between the substrate 2 and the lid 3 is stable. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a structure of a storage package for an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) device, and a method for manufacturing the electronic device storage package.

A conventional package structure for housing an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) device includes a package substrate made of an insulating material such as a semiconductor material or ceramic, and a flat surface mounted on the package substrate. A lid member (lid) made of a metal that forms a space in which the electronic device is disposed in the center when viewed, and the package substrate and the lid member surrounding the space are joined and sealed with a resin seal It constitutes a stop.
Further, as disclosed in Patent Document 1, a frame member (bump) made of a low-melting-point metal disposed between the package substrate and the lid member so as to surround the space is formed by the above-described welding by heating or the like. The package substrate and the lid member are joined.

Further, as can be seen in Patent Document 2, it is also adopted to form a plastic resin sealing portion on the outer peripheral side of the frame member in order to further ensure the airtightness between the package substrate and the lid member. In Patent Document 2, a low-melting-point metal dam is formed on the entire periphery so that the resin sealing portion does not enter the space portion.
Japanese Patent Laying-Open No. 2005-72220 (see [0045] to [0048] and FIG. 1) JP 2003-142523 A (see [0022], [0018], FIG. 1)

  In the case where the package substrate and the lid member are joined by the resin sealing portion, since both are joined by the synthetic resin, the joining strength is small, and the joining strength changes greatly due to a change in ambient temperature.

In Patent Document 1 and Patent Document 2, a frame member and a dam are disposed between the package substrate and the lid member so as to surround the space. And the lid member. In this case, since the frame member and the dam are continuously formed so as to surround the space, the total length becomes long, and the thickness of the full length, that is, the flatness is likely to vary. Accordingly, it is difficult to make the gap distance between the package substrate and the lid member in the side view direction uniform. For this reason, the space | interval gap | interval of a side view direction becomes easy to change with places. Therefore, the height of the space varies depending on the location, stable operation of an electronic device such as a semiconductor device or a MEMS device cannot be secured, and the bonding strength between the package substrate and the lid member becomes insufficient, and The airtightness is easily deteriorated and the stable operation of the electronic device is impaired.

  Further, when the thickness of the frame member or the dam varies, it is not easy to make the thickness uniform. For example, even when trying to equalize the height of the space by heating and pressurizing, the frame member and the dam are formed over the entire circumference. The height dimension cannot be easily adjusted.

In view of the above problems, the present invention can easily correct the height dimension in the side view direction at the joint portion of the package substrate and the lid member, and ensures the gap dimension between the two, and is disposed in the space portion. It is an object of the present invention to ensure stable operation of electronic devices such as semiconductor devices and MEMS devices.

  The electronic device storage package according to the first embodiment of the present invention includes an inner portion in which an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) device is disposed, and a substrate side formed on the outer periphery of the inner portion. A substrate provided with a joint portion, a cover portion that, together with the inner portion, forms an electronic device storage space for storing the electronic device when placed opposite to the inner portion of the substrate, and is formed on the outer periphery of the cover portion. A resin seal that seals the vicinity of the bonding portion when the lid having the lid side bonding portion bonded to the substrate side bonding portion and the substrate side bonding portion and the lid side bonding portion are bonded together. A plurality of columnar metal bumps are formed on one of the substrate-side bonding portion and the lid-side bonding portion, and the other has a size and position that covers the metal bumps in plan view. Insular metal bonding film Are formed in plural, is characterized in that characterized in that said joining portion of the metal bonding film and the metal bumps and metal bonding is formed.

  According to the configuration of the first embodiment of the present invention, a plurality of columnar metal bumps are formed on one of the substrate-side joint and the lid-side joint, and the other is the metal bump in plan view. A plurality of island-shaped metal bonding films are formed in a size and position to cover the substrate, and the metal bumps and the metal bonding films are metal-bonded to form the bonding portion. The gap in the side view direction between the electronic device and the lid is easy to adjust over the entire circumference surrounding the electronic device storage space, and the electronic device in which the height in the side view of the electronic device storage space is stable and built-in If the electronic device is accompanied by an operation, the operation can be performed stably, and metal bonding between the metal bump and the metal bonding film is ensured.

Among the above, the gap between the substrate and the lid in the side view direction can be easily adjusted over the entire circumference surrounding the electronic device housing space because the pair of the metal bump and the metal bonding film is located around the entire circumference. Therefore, even when the metal bumps or metal bonding films of the pair are different in height, when the lid is heated and pressed against the substrate, only the relatively high metal bumps are strongly pressed. By being easily lowered. Therefore, in all the pairs, the metal bumps and the metal bonding film are heated and pressed to ensure metal bonding.
This means that when the frame member and the dam are continuously formed surrounding the space between the substrate and the lid member as in the prior art, the total length of the frame member and the dam is long and the thickness in the total length is It is difficult to produce flatness due to variation, the gap in the side view direction between the substrate and the lid member is likely to vary, and if the thickness of the frame member or dam varies, Even if it tries to make the thickness uniform, the overall length of the frame member or dam is long and formed over the entire circumference, so the dimensions in the side view direction of the frame member or dam cannot be easily changed even by the pressurization. On the other hand, the above-described effects of the present invention are practically great. That is, when the lid is heated and pressed against the substrate, only the relatively high metal bumps are strongly pressed, so that only the metal bumps can be easily lowered.

In addition, according to the present invention, the metal bump and the metal bonding film are metal-bonded to ensure a long length of the bonding portion, particularly a length around the bonding portion, so that the lid can be bonded to the substrate. The strength can be increased.
That is, in the present invention, around the metal bump, the metal bump and the metal bonding film are fused, and an alloy layer of both metals forms a raised portion along the outer periphery of the metal bump from the metal bonding film side. Since this raised portion is formed around all metal bumps, the total length of all raised portions is the sum of the total perimeters of all metal bumps, and the longer the number of metal bumps, the longer. Therefore, by increasing the number of metal bumps installed, the total length of the all raised parts can be easily made longer than the total length of the outer periphery and inner periphery of the frame member or dam as in the prior art. Higher bonding strength can be ensured.
The metal bonding film is also formed in an island shape because when the metal bumps are in a molten state during the above-described heating and pressing, the molten metal bumps do not flow away in the plane direction. This is because the metal bump flows and stays at the outer edge of the metal bonding film, so that the molten alloy portion of both metals can easily form the above-described raised portion.

In addition, the present invention includes a resin sealing portion that seals the vicinity of the bonding portion when the substrate side bonding portion and the lid side bonding portion are bonded, as described above. Since the bonding portion between the substrate and the lid is a bonding portion between the metal bump and the metal bonding film, and the pair is separated from each other, when forming the resin sealing portion, the metal bump and the metal bonding film Liquid resin will be inject | poured to the inner side of a junction part, and the sealing effect by the said resin sealing part will improve.
That is, if the liquid resin is injected from the outside, for example, a gap is formed between the metal bump and the adjacent metal bump (similarly, the metal bonding film and the adjacent metal bonding film). The resin sealing portion can be formed by allowing the liquid resin to easily enter the inside, for example, the vicinity of the outer peripheral edge of the electronic device housing space. Therefore, the gap between the substrate and the lid is sealed well.

In addition, if the dimension of each part before the said heat pressurization is demonstrated using the code | symbol of FIG. 3 which is a principal part sectional drawing of the said part, and FIG. 4 which is a top view of FIG. 3, it is as follows.
The dimensions of the metal bumps are preferably an outer diameter D1 of 20 to 200 μm and a height H of 15 to 50 μm, and the dimensions of the metal bonding film are preferably an outer diameter D2 of 40 to 400 μm and a thickness T of 0.5 to 10 μm. . In this case, the metal bonding film protrudes outward from the outer peripheral surface of the metal bump in the radial direction, and the protrusion width is preferably 10 to 100 μm. Further, the gap M between the metal bump and the adjacent metal bump is preferably 50 to 500 μm, and the gap N between the metal bonding film and the adjacent metal bonding film is preferably 10 to 500 μm.
Further, after heating and pressing, the gap P between the upper surface of the substrate and the lower surface of the lid is preferably 15 to 59 μm.
More preferably, the dimensions of the metal bumps before heating and pressurization are such that the outer diameter D1 is 40 to 100 μm and the height H is 20 to 30 μm, and the dimension of the metal bonding film is 80 to 80 mm. 160 μm and a thickness T of 1 to 5 μm are preferable. In this case, the metal bonding film protrudes outward in the radial direction from the outer peripheral surface of the metal bump, and the protrusion width is more preferably 20 to 30 μm. Further, the gap M between the metal bump and the adjacent metal bump is preferably 60 to 200 μm, and the gap N between the metal bonding film and the adjacent metal bonding film is more preferably 10 to 200 μm.
The gap P between the upper surface of the substrate and the lower surface of the lid after heating and pressing is more preferably 20.5 to 34 μm.

  In the dimension of the metal bump, the outer diameter D1 is 20 to 200 μm, more preferably 40 to 100 μm. If the outer diameter D1 is smaller than those, the distance between the substrate and the lid (side surface) If the outer diameter D1 is larger than those, the total number of metal bumps is reduced, and the total outer peripheral length of the above-described raised portion cannot be ensured. Can not be raised. Further, the height H of the metal bump is 15 to 50 μm, more preferably 20 to 30 μm. If the height is lower than that, the formation of an intermetallic compound between the metal bump and the metal bonding film at the time of heating and pressurization, particularly at the time of alloy formation. This is because the distance between the board and the lid (the gap in the side view direction) may not be secured because the height is somewhat lower, and if it is higher than that, the gap between the board and the lid (the gap in the side view direction) This is because when the external force in the lateral direction (left and right in FIG. 1, the front and rear direction in FIG. 1) acts on either the substrate or the lid, the stress generated at the base of the metal bump increases and there is a risk of destruction. .

  In the dimension of the metal bonding film, the outer diameter D2 is 40 to 400 μm, more preferably 80 to 160 μm. If the outer diameter D2 is smaller than those, the bonding strength with the metal bump is reduced and the metal bump is strengthened. If it is larger than these, the total number of metal bonding films is reduced, the total outer peripheral length of the above-mentioned bulging portion cannot be secured, and the bonding strength cannot be increased. is there. Further, the protrusion width of the metal bonding film protruding outward in the radial direction from the outer peripheral surface of the metal bump is 10 to 100 μm, and more preferably 20 to 30 μm. As a result, the volume of the metal bonding film constituting the height of the above-described raised portion becomes small, and thus the height of the raised portion and the amount of the raised portion are reduced, making it difficult to secure the bonding strength with the metal bump. It is. If it is wider than these, the metal bumps flow on the surface of the metal bonding film to the outer edge during heating and pressurization, so that the above-mentioned height of the raised portion cannot be secured, and the bonding strength with the metal bumps is secured. This is because it becomes difficult. Furthermore, the thickness T of the metal bonding film is 0.5 to 10 μm, and more preferably 1 to 5 μm. This is because the amount becomes small and it becomes difficult to secure the bonding strength with the metal bump, and when it is thicker than these, it takes a long time to form the metal bonding film, which is uneconomical.

The gap M between the metal bumps and the adjacent metal bumps is 50 to 500 μm, more preferably 60 to 200 μm. If the gap is narrower than these, the number and area of the metal bumps increase, so the height of the metal bumps varies. In this case, it becomes difficult to correct the gap in the side view between the substrate and the lid even by heating and pressurization, and if it is larger than these, the total number of metal bumps is reduced and the total outer circumference of the above-mentioned raised portion is reduced. This is because the bonding strength cannot be increased.
The gap N between the metal bonding film and the adjacent metal bonding film is 10 to 500 μm, and more preferably 10 to 200 μm. And the metal alloy layer of the metal bonding film is easy to flow, and if it flows, the above-described raised portion height and the amount of rising vary, and the bonding strength becomes unstable. This is because the joint portion with the metal joint film is reduced and the overall joint strength is lowered.

After heating and pressing, the gap P between the upper surface of the substrate and the lower surface of the lid is 15 to 59 μm, more preferably 20.5 to 34 μm. This is because the distance between the substrate and the lid (gap in the side view direction) may not be secured, and if it is higher than that, the distance between the substrate and the lid (in the side view direction) If the gap) is too wide and an external force in the lateral direction (left and right, front and rear in FIG. 1) is applied to either the substrate or the lid, the stress generated at the base of the metal bump increases and there is a risk of destruction. It is.
Note that the columnar shape of the metal bump may be any shape in plan view, and may be substantially circular, substantially polygonal, or substantially elliptical, and any shape in side view may be used, and the outer shape on the substrate side is large, and metal-metal bonding. The outer shape may be tapered toward the membrane, or it may be a hollow cylinder.

An electronic device storage package according to Embodiment 2 of the present invention is the electronic device storage package described in Embodiment 1, wherein a storage recess in which the electronic device is disposed is formed on at least one side of the substrate and the lid. It is characterized by being.

  According to the above configuration, since the storage concave portion is formed, the arrangement position of the electronic device can be easily recognized in advance, so that the electronic device can be easily installed at the correct position, and the storage concave portion is formed by the lid and the substrate. The height of the electronic device storage space to be formed is stable, the electronic device to be stored is not damaged by hitting the lid and the substrate, and if the electronic device has an operation, the operation is hindered. Is to prevent.

The electronic device storage package according to Embodiment 3 of the present invention is the electronic device storage package described in any one of Embodiments 1 to 2, wherein the electronic device storage space has a substantially polygonal shape when viewed in plan. A plurality of portions are formed on each side of the substantially polygonal shape.

According to the above configuration, since the planar view shape of the electronic device storage space is substantially polygonal, the planar shape and dimensions in the planar view of the electronic device storage space can be formed with higher accuracy than in the case of an irregular shape. .
Furthermore, since a plurality of joint portions between the metal bumps and the metal bonding film are formed on each side of the substantially polygonal shape, the object for forming a plurality of the joint portions can be recognized as a clear place as a side. This makes it easy to reliably form a plurality of joints for each side. Therefore, the bonding strength can be secured for each side, and the adjustment of the gap in the side view direction is facilitated.
Of the polygons, a quadrilateral is practically preferable.
Is.

  The electronic device storage package according to Embodiment 4 of the present invention is the electronic device storage package according to any one of Embodiments 1 to 3, wherein the metal bumps are made of Sn or Sn alloy, Au or Au alloy, The metal bonding film is made of Au or Au alloy, or Sn or Sn alloy.

According to the above configuration, since the metal bump is made of Sn or Sn alloy, or Au or Au alloy, and the metal bonding film is made of Au or Au alloy, or Sn or Sn alloy, the melting points of Au and Sn are close to each other. The compatibility of the metal bond is also good, and the formation of the AuSn alloy facilitates thermal bonding between the metal bump and the metal bonding film, and increases the bonding strength.

  A method for manufacturing an electronic device storage package according to Embodiment 5 of the present invention is formed on an inner portion where an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) device is disposed, and on the outer periphery of the inner portion. A substrate provided with a substrate-side bonding portion, a cover that forms an electronic device storage space for storing the electronic device together with the inner portion when opposed to the inner portion of the substrate, and an outer periphery of the cover portion When a lid having a lid-side bonding portion formed on the substrate-side bonding portion and bonded to the substrate-side bonding portion is bonded to the substrate-side bonding portion and the lid-side bonding portion, the vicinity of the bonding portion is resin-sealed. A plurality of columnar metal bumps are formed on one of the substrate-side joint and the lid-side joint, and the other covers the metal bumps in plan view. Island-like in size and position A plurality of metal bonding films are formed, wherein the metal bump and the metal bonding film are metal-bonded to form the bonding portion. After joining the lid-side joining portion, heating and pressurizing to join both joining portions to form the joining portion, and after the joining portion forming step, the vicinity of the joining portion is sealed with resin And a resin sealing portion forming step of forming a resin sealing portion.

According to the said structure, it has the effect described in above-mentioned Embodiment 1 of this invention similarly.
In particular, according to the present embodiment, in the resin sealing portion forming step, when the substrate side bonding portion and the lid side bonding portion are bonded by the bonding portion forming step, the bonding portion between the substrate and the lid is: Since the pair of metal bumps and the metal bonding film are separated from each other, the liquid resin is easily injected to the inside of the bonding part between the metal bumps and the metal bonding film. Therefore, the sealing effect by the said resin sealing part improves more.
That is, if the liquid resin is injected from the outside, for example, a gap in the side view direction is formed between the metal bump and the adjacent metal bump (similarly, the metal bonding film and the adjacent metal bonding film). The liquid resin can easily enter from the gap to the inside, for example, to the vicinity of the outer periphery of the electronic device housing space to form the resin sealing portion. Therefore, the sealing of the gap between the substrate and the lid is good.

  A method for manufacturing an electronic device storage package according to Embodiment 6 of the present invention is formed on an inner portion where an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) device is disposed, and on the outer periphery of the inner portion. A cover having a substrate-side bonding portion, and a cover that forms an electronic device storage space for storing the electronic device together with the inner portion when disposed opposite to the inner portion of the substrate, and an outer periphery of the cover portion And a lid having a lid-side bonding portion formed on the substrate-side bonding portion and the substrate-side bonding portion and the lid-side bonding portion are bonded together by resin sealing. A plurality of columnar metal bumps are formed on one of the substrate-side joint and the lid-side joint, and the other covers the metal bumps in plan view. Island-like in size and position A plurality of metal bonding films are formed, wherein the metal bump and the metal bonding film are metal-bonded to form the bonding portion. Before the lid-side joint portion is joined to form the joint portion, the sealing resin placement step for placing a sealing resin in the vicinity of the joint portion, and after the sealing resin placement step, the substrate A joining portion forming step of forming the joining portion by joining the joining portion by heating and pressurizing after the side joining portion and the lid-side joining portion are brought into contact with each other.

According to the above configuration, by adopting the above-described sealing resin arrangement step, before the bonding portion is formed by bonding the substrate-side bonding portion and the lid-side bonding portion, the vicinity of the bonding portion is formed. Since the sealing resin is disposed, the sealing resin disposed in the vicinity of the joint portion is melted by heat and pressure in a subsequent process, and the resin seal portion in the vicinity of the joint portion is stabilized with sufficient volume. Can be reliably formed.
In particular, a sealing resin (which may be either a solid resin or a liquid resin) is placed in the back of the joint, that is, in the vicinity of the outer edge of the electronic device storage space, so that the resin is sealed to the vicinity of the outer edge. A stop can be formed, and the electronic device housing space can be sealed from the outside.

In addition, the resin may be cured by heating in the joining part forming step performed after the sealing resin arranging step, or the resin may be cured by heating different from the joining part forming step and A resin sealing portion may be formed. After the formation of the inner resin sealing portion, the liquid resin is injected from the outside through the gap between the metal bump and the adjacent metal bump (similarly, the metal bonding film and the adjacent metal bonding film), and heated to A new outer resin sealing portion may be formed outside the inner resin sealing portion formed near the outer periphery. Alternatively, after heating in the bonding part forming step after the sealing resin arranging step, the liquid resin is injected from the outside into the gap and then heated, and the sealing arranged in the sealing resin arranging step You may make it form the inner side resin sealing part by the resin for resin, and the outer side resin sealing part by the said inject | pouring liquid resin simultaneously and the outer side of the said inner side resin sealing part.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[First Embodiment]
FIG. 1 is a cross-sectional view of the main part of the electronic device storage package 1 according to the first embodiment of the present invention, and FIG. 2 is a plan view of a state where it is assumed that the lid 3 is removed when viewed from the upper side of FIG.
FIG. 1 is a main cross-sectional view at the position AA in FIG.

Reference numeral 2 denotes a substrate as a package substrate, which is made of a material excellent in insulation and heat resistance, such as ceramic, heat-resistant glass, and epoxy resin substrate with glass fiber.
Reference numeral 3 denotes a lid (lid) which is disposed above the substrate 2 in FIG. The lid 3 is made of a material having excellent heat resistance such as metal, ceramic, heat-resistant glass, and epoxy resin containing glass fiber. As the metal, stainless steel, Kovar and the like are preferable.
A plurality of columnar metal bumps 4 made of a low melting point metal are formed on the inner surface of the outer periphery of the lid 3.
5 is made of a low melting point metal, and is formed in an island shape in plan view on the upper surface of the outer peripheral portion of the substrate 2, and a plurality of metal bumps 4 are formed corresponding to the formation positions of the metal bumps 4. Metal bonding film. Details of the metal bump 4 and the metal bonding film 5 will be described later.
6, the substrate 2 and the lid 3 are bonded together by heat-sealing with the metal bumps 4 and the metal bonding film 5, and then the liquid is sealed in the gap in a side view between the substrate 2 and the lid 3. It is a resin sealing part formed by being heated and solidified after the synthetic resin is poured.

The substrate 2 has a recessed portion 2a formed in a concave shape in an inner portion on the center side in a plan view, and a substrate-side bonding portion 2b formed on the outer peripheral plane of the recessed portion 2a. The metal bonding film 5 is formed on the surface of the substrate side bonding portion 2b, and the metal bonding film 5 is bonded and fixed to the lid 3 on which the metal bumps 4 are formed.
The lid 3 includes a cover portion 3a that covers the hollow portion 2a on the center side in plan view, and a lid-side joint portion 3b that is formed on the outer periphery of the cover portion 3a and on which the metal bumps 4 are formed. Yes.

As shown in FIG. 1, when the lid 3 is joined to the substrate 2, an electronic device storage space 7 is formed by the recess 2 a and the cover 3 a on the center side in a plan view.
The electronic device storage space 7 stores a micro electro mechanical system (MEMS) device to be described later. Specifically, it is as follows.
The MEMS device is disposed and fixed on the bottom 2c of the recess 2a, which is the inner part. Accordingly, the recess 2a serves as a storage recess for storing an electronic device such as a MEMS.

The micro electro mechanical system (MEMS) device is integrally formed on an upper part of a semiconductor substrate 8 such as an LSI or an IC, and a fine surface such as a semiconductor integrated circuit element is formed on the main surface of the semiconductor substrate 8. An extremely fine electromechanical mechanism is configured by applying a processing technique for forming wiring.
The fine electromechanical mechanism is, for example, an electronic switch, an inductance, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, an acceleration sensor, a pressure sensor, or the like.

In FIG. 1, the fine electromechanical mechanism is an optical switch device 9.
The optical switch 9 includes a micromirror 11 formed in a matrix using a single crystal silicon substrate 10 by a fine etching technique, and a micromirror formed on the surface of the semiconductor substrate 8 at a position corresponding to the micromirror 11. Drive electrode 12.
The micromirror 11 is appropriately tilted in the side view direction by a drive signal output from the control circuit in the semiconductor substrate 8 output from the micromirror drive electrode 12. As described above, the micromirror 11 is appropriately tilted based on the drive signal, so that external light is appropriately reflected and an optical signal is output. For example, the micromirror 11 is used to project a video signal of a projector onto a screen. .

  13 is a wire that conducts between the electrode terminal 8a of the semiconductor substrate 8 and the conductive portion 15 disposed on the bottom 2c, and is composed of a gold wire, an aluminum wire, or the like. The electrode terminal 8a and the conductive portion 15 are wire bonders. It is joined with. The conductive portion 15 penetrates the substrate 2 and is electrically connected to the external electrode 14 on the lower surface of the substrate 2.

FIG. 2 is a plan view of a state where it is assumed that the lid 3 is removed from the electronic device storage package 1 of FIG.
The two-dot chain line displayed on the center side in FIG.
In addition, a two-dot chain line displayed on the outer peripheral side of the optical switch 9 in FIG. 2 indicates a plan view position where the lid 3 is disposed.

As shown in FIG. 2, a pair of the metal bump 4 and the metal bonding film 5, and a bonding portion Q where the metal bump 4 and the metal bonding film 5 are metal-bonded are around the electronic device storage space 7. Many are formed.
In the case of FIG. 2, the planar view shape of the electronic device storage space 7, particularly the recess 2a, is a substantially quadrangular shape, and a plurality of pairs and joint portions Q are arranged and formed on each side. . Of the substantially quadrilateral, the number of the pairs and joint portions Q arranged on the long side is larger than the number of the pairs and joint portions Q arranged on the short side. For this reason, the lid 3 is bonded to the substrate 2 uniformly over the entire circumference.

  Further, as shown in FIG. 2, the resin sealing portion 6 has an outer end located between the outer shape portion of the substrate 2 and the outer shape portion of the lid 3 and surrounds the entire circumference of the outer shape portion of the lid 3. The inner end extends to near the outer edge of the recess 2a of the substrate 2 and surrounds the entire circumference of the recess 2a. Therefore, the resin sealing portion 6 seals the substrate 2 and the lid 3 around the entire circumference of the electronic device storage space 7.

Here, the metal bump 4 and the metal bonding film 5 will be described in detail.
FIG. 3 is a cross-sectional view of the main part in a state where the two are joined by heating and pressing, and FIG.
The metal bump 4 is formed in a columnar shape in plan view on the lid-side joint portion 3 b on the inner peripheral surface of the lid 3. When the material of the lid 3 is a metal, the metal bump 4 is formed by electrolytic plating or the like by forming a resist other than the metal bump 4 formation place by screen printing. When the lid 3 is non-metallic, first, a metal thin film is attached to the place where the metal bump 4 is formed by electroless plating, and then the metal bump 4 is formed by electrolytic plating. The method for forming the metal bump 4 may be other than the above, and any method may be used as long as it is firmly bonded to the inner surface of the lid 3. For example, a columnar metal bump may be prepared in advance, and the columnar metal bump may be bonded to the inner surface of the lid 3 with an adhesive.
The material of the metal bump 4 is preferably a low melting point metal, preferably gold, silver, tin, nickel or an alloy thereof.
The shape of the metal bump 4 in a side view is formed in a tapered shape having a slightly larger diameter on the lid 3 side and a slightly smaller diameter on the tip side, that is, on the bonding surface side with the metal bonding film 5.

On the other hand, the metal bonding film 5 is formed in a circular shape in plan view on the substrate-side bonding portion 2 b on the outer peripheral upper surface of the substrate 2. The metal bonding film 5 can be formed by electrolytic plating or electroless plating in the same manner as the metal bump 4 described above. Since the metal bonding film 5 is thinner than the metal bumps 4, it may be formed by a dry plating method such as metal vapor deposition or sputtering.
The material of the metal bonding film 5 is preferably a low melting point metal, preferably gold, silver, tin, nickel or an alloy thereof.
As a preferable example, the metal bump 4 is gold and the metal bonding film 5 is tin.

When the lid 4 to which the gold metal bump 4 is bonded and the substrate 2 to which the tin metal bonding film 5 is bonded is heated and pressurized as described above, the metal bump 4 and the metal bonding film 5 are formed as shown in FIG. The joint portion Q is formed by joining.
The pressurization is performed at a pressure of 20 to 30 gr (gram) per metal bump 4. This pressurization is based on the upper surface of the lid 3 being pressed by the heater unit 18 indicated by a two-dot chain line in the upper part of FIG. Heating is performed at 340 to 350 ° C. by the heater unit 18. The melting point of the gold-tin alloy is about 280 ° C., and is heated by the heater unit 18 at a temperature far exceeding the melting point. It is preferable that the atmosphere at the time of heating and pressurizing is an inert gas or a vacuum because unnecessary chemical change does not occur when the gold and tin are fused.

It is presumed that the joint portion Q between the metal bump 4 and the metal bonding film 5 is formed as shown in FIG. That is, a gold-tin compound is formed at the contact portion (contact portion) in the side view direction by heating and pressurization, the compound layer 16 is thin, and the gold-tin alloy layer 17 is thick around the outer periphery of the metal bump 4. Highly formed.
The gold-tin compound layer 16 is weak in impact because it is brittle, although the bond between the two metals is strong, and therefore it is preferably formed thin. On the other hand, the gold-tin alloy layer 17 has a smaller bond between the two metals than the gold-tin compound layer 16, but is resistant to impacts and does not surround the metal bumps 4 as shown in FIG. It is formed so as to rise up. Therefore, the capacity increases. The raised portion has a triangular shape in a cross-sectional view, that is, the outer diameter on the metal bonding film 5 side increases and becomes narrower as it goes to the lid side.

  Therefore, as described above, the bond strength between the two metals is increased by the gold-tin compound layer 16, and at the same time, the impact resistance is increased by the gold-tin alloy layer 17. In addition, as described above, the gold-tin alloy layer 17 rises also in the height direction and becomes strong against external impact due to its large capacity. Further, since the raised portion of the gold-tin alloy layer 17 is formed over the entire outer periphery of the metal bump 4 and is formed on all the metal bumps 4, the total length (long) of the raised portion of the metal bump 4 is long. The total) is much longer. Therefore, the total bonding force between the metal bump 4 and the metal bonding film 5 is increased, and the bonding strength between the substrate 2 and the lid 3 is increased.

The dimensions of the metal bumps 4 and the metal bonding film 5 are as follows before heating and pressing.
The dimensional relationship codes in the side view of the metal bump 4 and the metal bonding film 5 are shown in FIG. 3, and the dimensional relationship codes in the plan view are shown in FIG.
The metal bump 4 has an outer diameter D1 of 40 μm and a height H of 25 μm, and the metal bonding film 5 has an outer diameter D2 of 80 μm and a thickness T of 3 μm. Therefore, the metal bonding film 5 protrudes outward from the outer peripheral surface of the metal bump 4 in the radial direction, but the protrusion width is 20 μm. The gap M between the metal bump 4 and the adjacent metal bump 4 is 60 μm, and the gap N between the metal bonding film 5 and the adjacent metal bonding film 5 is 20 μm. Further, the center distance L between the center of the metal bump 4 and the center of the adjacent metal bump 4 (the center distance L between the center of the metal bonding film 5 and the center of the adjacent metal bonding film 5 is substantially the same) is formed to 100 μm. Has been.
Further, after heating and pressing, the gap P between the upper surface of the substrate 2 and the lower surface of the lid 3 is 27 μm.

The dimensions before heating and pressurization are not limited to the above, and may be appropriately changed depending on the situation. For example, the dimensions of the metal bumps 4 are 20 to 200 μm in outer diameter D1 and high. The thickness H is preferably 15 to 50 μm, and the dimensions of the metal bonding film 5 are preferably an outer diameter D2 of 40 to 400 μm and a thickness T of 0.5 to 10 μm. In this case, the metal bonding film 5 protrudes outward in the radial direction from the outer peripheral surface of the metal bump 4, and the protrusion width is preferably 10 to 100 μm. The gap M between the metal bump 4 and the adjacent metal bump 4 is preferably 50 to 500 μm, and the gap N between the metal bonding film 5 and the adjacent metal bonding film 5 is preferably 10 to 500 μm.
Further, after heating and pressing, the gap P between the upper surface of the substrate 2 and the lower surface of the lid 3 is 15 to 59 μm.
More preferably, the metal bumps 4 have an outer diameter D1 of 40 to 100 μm and a height H of 20 to 30 μm, and the metal bonding film 5 has an outer diameter D2 of the above dimensions before heating and pressurization. 80-160 micrometers and thickness T are preferable 1-5 micrometers. In this case, the metal bonding film 5 protrudes outward in the radial direction from the outer peripheral surface of the metal bump 4, and the protrusion width is preferably 20 to 30 μm. The gap M between the metal bump 4 and the adjacent metal bump 4 is preferably 60 to 200 μm, and the gap N between the metal bonding film 5 and the adjacent metal bonding film 5 is preferably 10 to 200 μm.
The gap P between the upper surface of the substrate 2 and the lower surface of the lid 3 after heating and pressing is 20.5 to 34 μm.

The electronic device storage package 1 is manufactured (assembled) as follows.
First, the semiconductor substrate 8 provided with the optical switch device 9 is placed on the bottom 2c of the recessed portion of the substrate 2 and bonded with an adhesive, and the wire 13 is connected to the electrode terminal 8a of the semiconductor substrate 8 and the conductive portion 15 of the bottom 2c. Join with wire bonder. This joining is performed in the atmosphere.
Thereafter, a large number of metal bumps 4 formed as described above are brought into contact with the lower surface of the lid 3 to the metal bonding films 5 formed as described above on the surface of the substrate 2, and the upper surface of the lid 3 is contacted. The lid 3 is pressed against the substrate 2 by the heater portion 18 illustrated by the two-dot chain line in FIG. 1 to bond the metal bump 4 and the metal bonding film 5 as described above. This heating and pressurization is performed in an inert gas or vacuum atmosphere.
Thereafter, a liquid epoxy resin usually used as a sealing agent is injected into the gap between the substrate 2 and the lid 3 from the outside by an injection needle-like injector, and is cured by heating, whereby the resin sealing portion 6 is lidded. 3 is formed all around. The liquid injection and solidification by heating of the epoxy resin is preferably performed in an inert gas or vacuum atmosphere, but may be performed in the air.

  When the liquid epoxy resin is injected into the gap between the substrate 2 and the lid 3 from the outside, the metal bumps 4 are columnar and the metal bonding film 5 is island-shaped. Thus, the liquid epoxy resin is not formed between the metal bumps 4 and the adjacent metal bumps 4 and / or because it is not formed in a continuous shape (ring shape, frame shape) surrounding the electronic device storage space 7 as shown in FIG. Or it becomes easy to flow inward (electronic device storage space 7 side) from between the metal bonding film 5 and the adjacent metal bonding film 5, and the resin sealing portion 6 wraps the metal bump 4 and / or the metal bonding film 5. Further, since the width dimension of the resin sealing portion 6 in plan view is widened, it is possible to prevent external moisture and harmful gas from entering the electronic device housing space 7.

[Second Embodiment]
FIG. 5 is a cross-sectional view of the main part of the electronic device storage package 101 according to the second embodiment of the present invention, and FIG. 6 is a plan view of FIG. FIG. 5 is a main cross-sectional view taken along the line BB in FIG.

The main difference between the second embodiment and the first embodiment is that the electronic device housed in the electronic device housing space 7 is not the optical switch device but the semiconductor substrate 8, and the recess is not on the substrate 2 side. The point provided on the lid 3 side, the point where the conductive portion 15 does not penetrate the substrate 2 and the surface of the substrate 2 is disposed outside the electronic device storage space 7, and the resin sealing portion is the inner resin sealing portion 6A. And an outer resin sealing portion 6B, a gas barrier layer 19 is formed on the outer surface of the outer resin sealing portion 6B, and an adsorbent 20 for gas and the like in the electronic device housing space 7 It is a point that is arranged.
Except for the above, the material and structure are the same as in the first embodiment.

The substrate 2 has a substantially flat upper surface, and the semiconductor substrate 8 is fixed to an inner portion 2 d near the center thereof, and the electrode terminal 8 a is connected to the conductive portion 15 by a wire 13.
A plurality of metal bumps 4 formed in the same manner as in the first embodiment are bonded to the substrate-side bonding portion 2b on the outer peripheral side of the substrate 2, and both of the metal bumps 4 and the adjacent metal bumps 4 are connected to each other. Conductive portions 15 and / or external connection terminals 14 are arranged and formed so as not to contact the metal bumps. The inner end of the external connection terminal 14 serves as the conductive portion 15, and the outer end portion extends outward from the outer resin sealing portion 6B so that it can be connected to the outside.
The conductive portion 15 and / or the external connection terminal 14 includes a metal bonding film 5 adjacent to the metal bonding film 5 formed on the inner surface of the lid 3 when the lid 3 is fixed to the substrate 2 by heating and pressing. Between the metal bonding films 5 so as not to come into contact with each other.
It should be noted that both metal bonding films 5 are disposed between the metal bonding film 5 and the adjacent metal bonding film 5 so as not to contact the metal bumps 4 between the metal bump 4 and the adjacent metal bumps 4 as described above. The conductive portion 15 and / or the external connection terminal 14 disposed so as not to contact with each other are not limited to one, and a plurality of the conductive portions 15 and / or the external connection terminals 14 may be disposed without contacting each other. A larger number of wirings can be secured by the arrangement of the pieces.

As described above, the lid 3 is formed with the recessed portion 3c serving as a covering portion, and the inner portion 2d of the substrate 2 and the recessed portion 3c constitute the electronic device housing space 7.
A metal bonding film 5 is formed on the lid-side bonding portion 3 b outside the lid 3. The metal bonding film 5 is formed in the same manner as in the first embodiment. A plurality of islands are provided, and the metal bonding film 5 is bonded to the metal bumps 4 by heat and pressure as in the first embodiment.

In the gap between the substrate 2 and the lid 3 in the side view direction, an inner resin sealing portion 6A and an outer resin sealing portion 6B are provided on the outer edge side of the electronic device housing space 7 as a resin sealing portion. Is provided.
The inner resin sealing portion 6A is formed in the gap from the outer edge side of the electronic device housing space 7 to the vicinity where the metal bonding film 5 or the metal bump 4 is disposed.
The outer resin sealing portion 6B is disposed so as to cover almost the entire periphery of the outer edge of the lid 3 outside the inner resin sealing portion 6A.
The material of the inner resin sealing portion 6A and the outer resin sealing portion 6B may be the same as in the first embodiment. Moreover, the sealing resin agent from which both differ may be sufficient.
The boundary contact position between the inner resin sealing portion 6A and the outer resin sealing portion 6B may be an arrangement position of the metal bonding film 5 or the metal bump 4, or may be an outer side thereof, or It may be inside. 5 and 6, the inner resin sealing portion 6 </ b> A is disposed up to the vicinity of the inner edge position of the metal bonding film 5.

Constructing the resin sealing portion with two of the inner resin sealing portion 6A and the outer resin sealing portion 6B has the following effects.
First, when the width (depth) in plan view of the gap in the side view direction between the substrate and the lid is wide, it is difficult to configure with one resin sealing portion as in the first embodiment. Therefore, by forming the resin sealing portion in two, the resin sealing portion can be reliably formed even in a wide gap. For example, when the resin sealing portion is configured as in the first embodiment, a long gap is formed when a liquid resin sealing material is injected into the gap from the outside in order to form the resin sealing portion. The inner resin sealing portion 6A is formed by injecting a liquid resin sealing material having a low viscosity that is easy to inject into the back of the gap, that is, the outer edge of the electronic device housing space 7, but is easily injected. Then, after that, the outer resin sealing portion 6B can be easily formed by injecting a liquid resin sealing agent having a large appropriate viscosity.
Moreover, since the resin sealing portion is composed of the inner resin sealing portion 6A and the outer resin sealing portion 6B, it is easy to change the material of both, so that it is easy to enhance the gas barrier effect. Become.
In addition, the resin sealing part may be composed of two parts, the inner resin sealing part 6A and the outer resin sealing part 6B, and the resin sealing part may be divided into three or more, and the above-mentioned effects are the same. It has it.

In FIG. 5, 19 is a gas barrier layer formed on the outer surface of the outer resin sealing portion 6B.
The gas barrier layer 19 is formed into a thin film of a material that does not easily transmit gas, such as metal or ceramic. When made of metal, it is preferably formed by electroless plating. Since electroless plating can be performed at a low temperature, the outer resin sealing portion 6B is not damaged. Note that, depending on the material of the outer resin sealing portion 6B, it may be formed by dry plating.
The gas barrier layer 19 preferably has a thickness of 0.5 to 5 μm.
The gas barrier layer may be formed on the outer surface of the resin sealing portion 6 of the first embodiment in the same manner as described above.

In FIG. 5, a moisture / gas adsorbent 20 is disposed on the inner wall of the recess 3 c of the lid 3.
The moisture / gas adsorbent 20 absorbs moisture or harmful gas and does not hinder the electrical connection and operation of the built-in semiconductor substrate.
Silica gel can be applied as the moisture adsorbent.
The moisture / gas adsorbent 20 can absorb moisture and harmful gas that has penetrated through the resin sealing portion and absorbs moisture and harmful gas filled in the electronic device housing space 7. Is something that can be done.
The moisture / gas adsorbent may be formed on the inner inner surface of the lid 3 of the first embodiment.

Formation of the inner resin sealing portion 6A and the outer resin sealing portion 6B including the manufacture (assembly) of the electronic device storage package 1 is performed as follows.
First, the semiconductor substrate 8 is placed on the surface of the inner portion 2d of the substrate 2 and bonded with an adhesive, and the wire 13 is connected to the electrode terminal 8a of the semiconductor substrate 8 and the conductive portion 15 formed on the surface of the substrate 2. Join with. This joining is performed in the atmosphere. A large number of metal bumps 4 are formed on the surface of the substrate 2 at predetermined positions corresponding to the metal bonding film 5 as described above. In addition, the conductive portion 15 and / or the external connection terminal 14 as described above is disposed and formed on the surface of the substrate 2.
On the other hand, the above-described moisture / gas adsorbent 20 is installed on the lid 3 on the upper wall of the recess 3c. A plurality of metal bonding films 5 are formed at predetermined positions on the lid 3 as described above. Next, an inner resin sealing material is arranged so that the inner resin sealing portion 6A is formed. The inner resin sealing material is, for example, a liquid epoxy resin, and the liquid epoxy resin is applied. The application location is a region from the outer edge of the recess 3 c to the vicinity of the inner end of the metal bonding film 5. The inner resin sealing material may be a solid sealing resin instead of the liquid epoxy resin, and is disposed at the location. At that time, the solid sealing resin is temporarily fixed to the inner surface of the lid 3 with a small amount of adhesive. The above is performed in the atmosphere.

After that, a large number of metal bumps 4 formed on the upper surface of the substrate 2 are brought into contact with a plurality of metal bonding films 5 formed on the lower surface of the lid 3, and the upper surface of the lid 3 is shown by a two-dot chain line in FIG. The lid 3 is pressed against the substrate 2 by the heater 18 shown in the figure, and the metal bumps 4 and the metal bonding film 5 are bonded as described above. This heating and pressurization is performed in an inert gas or vacuum atmosphere. By this heating, the above-described inner resin sealing material is cured to form the inner resin sealing portion 6A. When the curing is insufficient, the inner resin sealing portion 6A may be heated before and after the heating and pressing.
Thereafter, an epoxy resin usually used as a sealing material is injected into the gap between the substrate 2 and the lid 3 in a liquid state from the outside, and is cured by heating, whereby the outer resin sealing portion 6B is entirely surrounded by the lid 3. Is formed. The liquid injection and heat curing of the epoxy resin are preferably performed in an inert gas or vacuum atmosphere, but may be performed in the air.
The heating for forming the outer resin sealing portion 6B may be the same as the heating for forming the inner resin sealing portion 6A.

[Modification 1]
A modification of the second embodiment will be described with reference to FIG.
FIG. 7 shows an example in which some of the conductive portions 15 in FIGS. 5 and 6 are formed integrally with the metal bump 4.
In FIG. 7, the metal bumps 4 formed on the surface of the substrate 2 and the conductive portion 15 are connected and formed integrally. The inner side of the metal bump 4, that is, the semiconductor substrate 8 side, is integrated with the metal bump 4 to form an integrated conductive portion 15 a, and the metal bump 4 is integrated with the metal bump 4 outside. Thus, the integrated external connection terminal 14a is configured.
The integrated conductive portion 15a and the integrated external connection terminal 14a may be formed after the metal bump 4 is formed, or may be formed before the metal bump 4 and then the metal bump 4 is formed. .

The conductive portion and the external connection terminal are configured as the integrated conductive portion 15a and the integrated external connection terminal 14a, and the metal bump 4 is not connected as shown in FIGS. May be mixed.
Note that all the conductive portions and the external connection terminals may be configured as the integrated conductive portion 15a and the integrated external connection terminal 14a.
By forming the conductive portion 15 integrally with the metal bumps 4 as described above, the degree of freedom in the arrangement of the conductive portion and the external connection terminals is increased, and a large number of conductive portions and external connection terminals can be formed, corresponding to miniaturization. It becomes easy to do.

[Third Embodiment]
In the third embodiment, as shown in FIG. 8, a packing 21 is disposed instead of configuring the resin sealing portion. Others are the same as in the first embodiment.
The packing 21 is disposed over the entire circumference in a gap in the side view direction between the substrate 2 outside the electronic device storage space 7 and the lid 3. The packing 21 has a ring shape in a plan view, and is made of an elastic body such as synthetic rubber or soft synthetic resin, and is compressed by the above-described gap between the substrate 2 and the lid 3 so that moisture, The harmful gas is prevented from entering the electronic device housing space 7.

The packing 21 may be disposed in a place other than the above, and may be disposed in the gap on the outer side of the joint portion of the metal bump 5 or the metal bonding film 5, for example.
Further, the packing may be arranged at two or more places, for example, together with the packing 21, arranged in the gap on the outer side of the joint portion of the metal bump 5 or the metal bonding film 5 as shown by a one-dot chain line in FIG. The outer packing 22 may also be arranged.
The packing 21 or the outer packing 22 may be used in combination with a resin sealing portion as shown in FIG.

  In the case of FIG. 8, the metal bump 4 is disposed on the lid 3 side and the metal bonding film 5 is disposed on the substrate 2 side. However, as shown in FIG. 5, the metal bump 4 is disposed on the substrate 2 side. The film 5 may be disposed on the lid 3 side.

[Modification 2]
The present invention is not limited to the above-described embodiments, and various modifications may be made.
First, the metal bump 4 and the metal bonding film 5 can be variously modified.
FIG. 9 shows a modification in which the planar shape of the metal bump 4 and the metal bonding film 5 is formed in a quadrilateral shape.
By forming in the above-mentioned quadrilateral shape, it is easy to reduce the variation in the planar shape of the metal bumps 4 and the metal bonding film 5, and the interval N between the adjacent metal bumps 4, 4 can be formed with high accuracy. Further, since the arrangement efficiency is improved, the number of installations or the installation area can be efficiently formed within a predetermined area.
The quadrilateral may be either the metal bump 4 or the metal bonding film 5 and the other may be formed in a circle.

[Modification 3]
FIG. 10 shows a modification in which the planar shapes of the metal bump 4 and the metal bonding film 5 are formed in an oval shape or an oval shape.
In the metal bump 4, the length D4 is preferably about 1.5 to 5 times the width D3. The metal bonding film 5 is also oval or oval, and the length is preferably about 1.5 to 5 times the width.
By forming the oval shape or the oval shape, it is possible to secure a certain large bonding area at one location in the metal bump 4 and the metal bonding film 5 and to increase the bonding strength to some extent.
Note that one of the metal bump 4 and the metal bonding film 5 may be elliptical or oval, and the other may be circular or quadrilateral.

[Modification 4]
In FIG. 11, the electronic device housing space has a substantially polygonal shape in plan view, and a plurality of joining portions of the metal bumps 4 and the metal bonding film 5 are formed and arranged on each side of the substantially polygonal shape.
FIG. 11 shows an example in which two bonding portions between the metal bump 4 and the metal bonding film 5 are arranged on the short side (longitudinal side) and three places are arranged on the long side (lateral side).
Thus, by forming and arranging a plurality for each side, the formation area of the alloy layer 17 as shown in FIG. 3 is increased and the bonding strength is increased, and when the substrate and the lid are heated and pressed. In addition, since the joint portion is not formed over the entire circumference, correction such as pressure control for making the gap uniform by pressurization is facilitated.

[Modification 5]
The joints between the metal bumps 4 and the metal bonding film 5 are arranged in a single row (single shape) surrounding the electronic device storage space 7 as shown in FIGS. Is not to be done.
For example, the joint portions between the metal bumps 4 and the metal bonding film 5 may be arranged in a double row (double) or a multi-row (multiple) more than the electronic device storage space 7. Instead of neatly arranging them in rows, they may be separated.

In the region where the joint portion between the metal bump 4 and the metal bonding film 5 exists, the ratio of the area where the metal bump 4 exists and the ratio of the area where the metal bonding film 5 exists are a predetermined ratio. Must be within range. In the region where the joint portion between the metal bump 4 and the metal bonding film 5 exists, the ratio of the area where the metal bump 4 exists is preferably 20 to 80%, and the metal bonding film 5 exists. The ratio of the area where the metal bumps 4 are present is preferably 30 to 90%, more preferably 40 to 60%, and the area where the metal bonding film 5 is present is 50 to 70%. %.
When the metal bump 4 falls below the lower limit, the bonding area of the metal bump 4 is reduced, and the metal bump 4 is easily crushed when the substrate 2 and the lid 3 are heated and pressed. Become. When the metal bonding film 5 is below the lower limit, the volume of the alloy part of the metal bump 4 and the metal bonding film 5 and the intermetallic compound is reduced during the heating and pressing, and it becomes difficult to ensure sufficient bonding strength. . If the metal bump 4 exceeds the upper limit value, the cumulative value of the formation length of the alloy portion formed on the outer periphery of the metal bump 4 cannot be secured (long), and the necessary joint strength between them can be obtained. It will be difficult. When the metal bonding film 5 exceeds the upper limit value, the molten portion on the outer periphery of the metal bump 4 easily flows to the outer periphery of the metal bonding film 5 during the heating and pressurization, and the alloy at the base of the metal bump 4 is formed. The volume of the part is reduced, and the joint strength as a whole is reduced.

[Modification 6]
The planar view shapes of the substrate 2 and the lid 3 are not limited to those described above. For example, as illustrated in FIG. 12, the substrate 2 may be a quadrilateral and the lid 3 may be a substantially circular shape.
Alternatively, the substrate 2 may be substantially circular and the lid 3 may be a quadrilateral.
Or both may be substantially circular.

  The present invention is used for a package structure for storing an electronic device such as a semiconductor device, a micro electro mechanical system (MEMS) device, and a method for manufacturing the electronic device storage package.

1 is a cross-sectional view of a main part of an electronic device storage package according to a first embodiment of the present invention. The top view of the state which assumed that one component was removed seeing from the paper surface upper direction in FIG. The principal part sectional drawing of the state joined by the heat pressurization of the metal bump and metal joining film in FIG. The top view which shows the relationship between the metal bump and metal bonding film before the heating pressurization of the metal bump and metal bonding film in FIG. Sectional drawing of the principal part of the electronic device storage package of 2nd Embodiment of this invention. The top view of FIG. The top view of the principal part in the modification 1 of 2nd Embodiment of this invention. Sectional drawing of the principal part of the electronic device storage package of 3rd Embodiment of this invention. The top view of the metal bump and metal joining film in the modification 2 of this invention. The top view of the metal bump and metal joining film in the modification 3 of this invention. The arrangement | positioning top view of the metal bump and metal joining film | membrane in the modification 4 of this invention. The top view of the board | substrate and lid in the modification 6 of this invention.

Explanation of symbols

    1: electronic device storage package, 2: substrate, 2a: hollow portion, 2b: substrate side bonding portion, 2c: bottom portion of hollow portion, 2d: inner portion, 3: lid, 3a: cover portion, 3b: lid side bonding Part, 3c: hollow part, 4: metal bump, 5: metal bonding film, 6: resin sealing part, 6A: inner resin sealing part, 6B: outer resin sealing part, 7: electronic device storage space, 8: Semiconductor substrate, 8a: electrode terminal, 9: optical switch, 10: single crystal silicon substrate, 11: micromirror, 12: micromirror drive electrode, 13: wire, 14: external connection terminal, 14a: integrated external connection terminal, 15: Conductive part, 15b: Integrated conductive part, 16: Compound layer, 17: Alloy layer, 18: Heater part, 19: Gas barrier layer, 20: Adsorbent such as moisture / gas, 21: Packing, 22: Outer packing, H: Metal bump height, T: Metal Thickness of composite film, D1: outer diameter of metal bump, D2: outer diameter of metal bonding film, L: distance between centers of metal bumps (between metal bonding films), M: metal bump and adjacent metal bump Gap: N: Gap between the metal bonding film and the adjacent metal bonding film, P: Gap, Q: Bonded portion

Claims (6)

An inner portion where an electronic device such as a semiconductor device, a micro electro mechanical system (MEMS) device is disposed, a substrate provided with a substrate-side joint formed on the outer periphery of the inner portion, and
A cover portion that forms an electronic device storage space for storing the electronic device together with the inner portion when disposed opposite to the inner portion of the substrate, and is formed on an outer periphery of the cover portion and bonded to the substrate-side bonding portion A lid having a lid-side joint portion,
When the substrate-side bonding portion and the lid-side bonding portion are bonded, a resin sealing portion that seals the vicinity of the bonding portion with a resin,
A plurality of columnar metal bumps are formed on one of the substrate-side bonding portion and the lid-side bonding portion, and the other is an island-shaped metal bonding film with a size and position that covers the metal bumps in plan view. The electronic device housing package is characterized in that a plurality of are formed, and the metal bump and the metal bonding film are metal-bonded to form the bonding portion. The electronic device storage package according to claim 1,
An electronic device storage package, wherein a storage recess in which the electronic device is disposed is formed on at least one side of the substrate and the lid. In the electronic device storage package according to any one of claims 1 to 2,
An electronic device storage package, wherein the electronic device storage space has a substantially polygonal shape in plan view, and a plurality of joint portions are formed on each side of the substantially polygonal shape. The electronic device storage package according to any one of claims 1 to 3,
The electronic device housing package, wherein the metal bump is made of Sn or Sn alloy, or Au or Au alloy, and the metal bonding film is made of Au or Au alloy, or Sn or Sn alloy. An inner part in which an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) apparatus is disposed, a substrate having a substrate-side joint formed on the outer periphery of the inner part, and the inner part of the substrate A cover portion that forms an electronic device storage space for storing the electronic device together with the inner portion when disposed opposite to the side portion, and a lid side that is formed on the outer periphery of the cover portion and is joined to the substrate side joint portion A lid having a bonding portion; and a resin sealing portion for resin-sealing the vicinity of the bonding portion when the substrate-side bonding portion and the lid-side bonding portion are bonded, and the substrate-side bonding portion And a plurality of columnar metal bumps are formed on one of the lid-side joints, and a plurality of island-shaped metal joint films are formed on the other side in a size and position covering the metal bumps in plan view. The metal bump and the Genus bonding film A manufacturing method of an electronic device accommodating package is the junction to metal bonding is composed,
A joining portion forming step of forming the joining portion by contacting the substrate side joining portion and the lid side joining portion and then heating and pressing to join both joining portions;
After the bonding part forming step, a resin sealing part forming step of sealing the vicinity of the bonding part with resin and forming a resin sealing part;
A method for manufacturing an electronic device storage package, comprising: An inner part in which an electronic device such as a semiconductor device or a micro electro mechanical system (MEMS) apparatus is disposed, a substrate having a substrate-side joint formed on the outer periphery of the inner part, and the inner part of the substrate A cover portion that forms an electronic device storage space for storing the electronic device together with the inner portion when disposed opposite to the side portion, and a lid side that is formed on the outer periphery of the cover portion and is joined to the substrate side joint portion A lid having a bonding portion; and a resin sealing portion for resin-sealing the vicinity of the bonding portion when the substrate-side bonding portion and the lid-side bonding portion are bonded, and the substrate-side bonding portion And a plurality of columnar metal bumps are formed on one of the lid-side joints, and a plurality of island-shaped metal joint films are formed on the other side in a size and position covering the metal bumps in plan view. The metal bump and the Genus bonding film A manufacturing method of an electronic device accommodating package is the junction to metal bonding is composed,
Before the substrate-side bonding portion and the lid-side bonding portion are bonded to form a bonding portion, a sealing resin arrangement step of arranging a sealing resin in the vicinity of the bonding portion;
After the sealing resin arrangement step, a bonding portion forming step of forming the bonding portion by contacting the substrate side bonding portion and the lid side bonding portion and then heating and pressing to bond both the bonding portions;
A method for manufacturing an electronic device storage package, comprising:

Images