JP2006333454A5 - - Google Patents

Claims (12)

An antenna, and a layer having a semiconductor element electrically connected to the antenna,
The antenna has a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,
The dielectric layer has a spherical shape, an oval shape, a meteorite-like ellipsoidal sphere, a rugby ball-like ellipsoidal sphere, a disc shape, or a columnar shape or a polygonal column shape, and its outer end has a curved surface. Semiconductor device . In claim 1,
The antenna and the layer having the semiconductor element to a semiconductor device wherein said antenna through the resin layer semiconductor device is characterized in that it is electrically connected with the conductive particles. An antenna, and a layer having a semiconductor element electrically connected to the antenna,
The antenna has a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,
The dielectric layer has a spherical shape, an oval shape, a meteorite-like ellipsoidal sphere, a rugby ball-like ellipsoidal sphere, a disc shape, or a columnar shape or a polygonal column shape, and its outer end has a curved shape,
The layer having the semiconductor element is provided by being inserted into an opening formed in the dielectric layer,
The opening provided with the layer having the semiconductor element is filled with underfill,
The connection terminal formed on the surface of the layer having the semiconductor element is electrically connected to the second conductive layer formed on the surface of the underfill and the dielectric layer. apparatus. 4. The semiconductor device according to claim 3, wherein the underfill is an epoxy resin, an acrylic resin, or a polyimide resin. A layer having a semiconductor element, a layer having a passive element electrically connected to the layer having the semiconductor element, and an antenna electrically connected to the layer having the passive element,
The antenna has a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,
The dielectric layer has a spherical shape, an oval shape, a meteorite-like ellipsoidal sphere, a rugby ball-like ellipsoidal sphere, a disc shape, a columnar shape or a polygonal column shape, and an outer end portion of the dielectric layer has a curved shape. Semiconductor device . In claim 5 ,
Layer having the passive elements, an inductor, a semiconductor device and having a capacitor, and a passive element comprising at least one or more resistors. In claim 5 or claim 6 ,
Wherein the layer having the layer and the semiconductor device having a passive element, a semiconductor device characterized by being electrically connected via the resin layer containing conductive particles. In any one of Claims 1 thru | or 7 ,
The semiconductor element formed in the layer including a semiconductor element, the semiconductor device characterized in that it comprises a organic semiconductor layer. In any one of Claims 1 thru | or 7,
The layer including the semiconductor element includes a transistor, an insulating layer covering the transistor, and a memory element including a third conductive layer, an organic compound layer, and a fourth conductive layer.
In the insulating layer, a contact hole exposing the source region and the drain region of the transistor is formed,
The third conductive layer is provided in contact with one of a source region or a drain region of the transistor through the contact hole,
The organic compound layer is provided in contact with the third conductive layer in the contact hole,
The fourth conductive layer is provided in contact with the organic compound layer in the contact hole. In any one of Claims 1 thru | or 9 ,
The dielectric layer is formed of one or more selected from alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium diobate, and lead zirconate titanate. A semiconductor device . In any one of Claims 1 thru | or 9 ,
It said dielectric layer is an epoxy resin, phenol resin, polybutadiene resin, and wherein a is formed at one or more selected from the vinylbenzyl, and polyfumarate. In any one of Claims 1 to 11 ,
The semiconductor device is coated with a protective layer made of a resin or a diamond-like carbon, and wherein a filling agent is filled between the protective layer and the semiconductor device.