JP2007134694A5 - - Google Patents
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- JP2007134694A5 JP2007134694A5 JP2006279598A JP2006279598A JP2007134694A5 JP 2007134694 A5 JP2007134694 A5 JP 2007134694A5 JP 2006279598 A JP2006279598 A JP 2006279598A JP 2006279598 A JP2006279598 A JP 2006279598A JP 2007134694 A5 JP2007134694 A5 JP 2007134694A5
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- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- electrode
- coiled antenna
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (5)
コイル状のアンテナと前記コイル状のアンテナに電気的に接続された半導体集積回路とを有し、
前記コイル状のアンテナと重なるように前記半導体集積回路は配置され、
前記半導体集積回路と前記コイル状のアンテナとが重なる領域に容量素子を有し、
前記容量素子は前記コイル状のアンテナの配線の一部を一方の電極とし、前記半導体集積回路の電極または配線の一部を他方の電極とし、前記一方の電極及び前記他方の電極で絶縁膜を挟んだ構成であり、
前記他方の電極は前記半導体集積回路の電源線であり、
前記電源線は前記半導体集積回路が有する素子を囲むように配置されていることを特徴とする半導体装置。 In semiconductor devices that communicate data by wireless communication,
A coiled antenna and a semiconductor integrated circuit electrically connected to the coiled antenna;
The semiconductor integrated circuit is arranged so as to overlap the coiled antenna,
A capacitor element in a region where the semiconductor integrated circuit and the coiled antenna overlap;
The capacitor element has a part of the wiring of the coiled antenna as one electrode, a part of the electrode of the semiconductor integrated circuit or a part of the wiring as the other electrode, and an insulating film formed by the one electrode and the other electrode. It is a sandwiched configuration,
The other electrode is a power line of the semiconductor integrated circuit;
The power supply line is disposed so as to surround an element included in the semiconductor integrated circuit.
前記容量素子は、前記コイル状のアンテナと並列に接続された共振容量であることを特徴とする半導体装置。 In claim 1 ,
The semiconductor device, wherein the capacitive element is a resonant capacitor connected in parallel with the coiled antenna.
前記容量素子は、半導体集積回路の電源電圧を保持する保持容量であることを特徴とする半導体装置。 In claim 1 or claim 2 ,
The semiconductor device, wherein the capacitor element is a storage capacitor for holding a power supply voltage of a semiconductor integrated circuit.
前記半導体集積回路は、絶縁基板上に薄膜トランジスタを用いて形成されていることを特徴とする半導体装置。 In any one of Claims 1 to 3 ,
The semiconductor device, wherein the semiconductor integrated circuit is formed on an insulating substrate using a thin film transistor.
前記半導体装置と、前記半導体装置とデータの交信を行うアンテナ及びリーダライタとを有することを特徴とする通信システム。 In any one of Claims 1 thru | or 4 ,
A communication system comprising: the semiconductor device; and an antenna and a reader / writer that perform data communication with the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006279598A JP4907292B2 (en) | 2005-10-14 | 2006-10-13 | Semiconductor device and communication system using the semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005300971 | 2005-10-14 | ||
| JP2005300971 | 2005-10-14 | ||
| JP2006279598A JP4907292B2 (en) | 2005-10-14 | 2006-10-13 | Semiconductor device and communication system using the semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011271810A Division JP2012089872A (en) | 2005-10-14 | 2011-12-13 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007134694A JP2007134694A (en) | 2007-05-31 |
| JP2007134694A5 true JP2007134694A5 (en) | 2008-11-13 |
| JP4907292B2 JP4907292B2 (en) | 2012-03-28 |
Family
ID=38156054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006279598A Expired - Fee Related JP4907292B2 (en) | 2005-10-14 | 2006-10-13 | Semiconductor device and communication system using the semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4907292B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5403903B2 (en) | 2007-12-04 | 2014-01-29 | ルネサスエレクトロニクス株式会社 | Semiconductor device, manufacturing method thereof, and signal transmission / reception method using the semiconductor device |
| JP5442950B2 (en) | 2008-01-29 | 2014-03-19 | ルネサスエレクトロニクス株式会社 | Semiconductor device, manufacturing method thereof, signal transmission / reception method using the semiconductor device, and tester device |
| US8399960B2 (en) | 2008-03-13 | 2013-03-19 | Nec Corporation | Semiconductor device |
| WO2010032602A1 (en) * | 2008-09-18 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101611643B1 (en) | 2008-10-01 | 2016-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| KR102087138B1 (en) * | 2012-05-14 | 2020-03-10 | 엘지전자 주식회사 | Wireless power transmitting apparatus |
| KR20150139731A (en) * | 2014-06-03 | 2015-12-14 | 주식회사 히타치엘지 데이터 스토리지 코리아 | Apparatus for transmitting power wirelessly |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5416356A (en) * | 1993-09-03 | 1995-05-16 | Motorola, Inc. | Integrated circuit having passive circuit elements |
| JP3719618B2 (en) * | 1996-06-17 | 2005-11-24 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
| JP4896369B2 (en) * | 2002-12-25 | 2012-03-14 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US6816125B2 (en) * | 2003-03-01 | 2004-11-09 | 3M Innovative Properties Company | Forming electromagnetic communication circuit components using densified metal powder |
| JP2004273538A (en) * | 2003-03-05 | 2004-09-30 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
| JP4536496B2 (en) * | 2003-12-19 | 2010-09-01 | 株式会社半導体エネルギー研究所 | Semiconductor device and driving method of semiconductor device |
-
2006
- 2006-10-13 JP JP2006279598A patent/JP4907292B2/en not_active Expired - Fee Related
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