JP2006324381A - Semiconductor device, manufacturing method thereof, and equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide semiconductor device manufacturing equipment which can conduct proper positioning of a semiconductor element at a predetermined place on a substrate, at face-up mounting of the semiconductor element at a predetermined place on the substrate. <P>SOLUTION: The semiconductor device manufacturing equipment FA comprises a first holder 10 which can hold and move the semiconductor element 2; second holder 20 which can hold and move the substrate 1; irradiation device 30 which is arranged facing the circuit plane 2A of the semiconductor element 2, and irradiates detection light KL on the circuit plane 2A; photodetector 40 which is so arranged as to face the back face 2B of the semiconductor element 2, and can receive the detection light KL which has passed through the semiconductor element 2; and a controller CONT which detects the positional information about the semiconductor element 2, based on the detection results of the photodetector 40, makes positioning of the semiconductor element 2 and the substrate 1, based on the detected positional information by driving the first holding portion 10 and/or the second holding portion 20, and then connects the back face 2B of the semiconductor element 2 and the front face 1A of the substrate 1. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method and apparatus for manufacturing a semiconductor device, and a semiconductor device.

When mounting a semiconductor chip (semiconductor element) on a mounting target such as a printed wiring board (substrate), it is necessary to position (align) the semiconductor chip and the mounting target. In the following patent document, when positioning a target (connection terminal) provided on a bonding surface of a first semiconductor chip and a target (connection terminal) provided on a bonding surface of a second semiconductor chip, infrared light is positioned. A technique is disclosed that uses light to capture the bonding surfaces of the first and second semiconductor chips from the front side on the one hand and transparently from the back side on the other side.
JP-A-11-126869

  By the way, when so-called face-up mounting of a semiconductor chip on a substrate, after mounting the semiconductor chip at a predetermined position on the substrate with a predetermined positional accuracy (mounting accuracy), a connection terminal provided on the semiconductor chip and the substrate In many cases, the board side terminals provided on the board are connected by a wire bonding technique. In this case, even if the mounting accuracy is relatively low, the semiconductor chip can be mounted on the substrate in a desired state by increasing the alignment accuracy during wire bonding. However, in recent years, semiconductor chips are mounted at predetermined positions on the substrate by face-up mounting, due to miniaturization of semiconductor chip wiring, high density of connection terminals, high density of board side terminals, miniaturization of board side wiring, etc. The mounting accuracy when doing so is also required to be high.

  The present invention has been made in view of the above circumstances, and manufacture of a semiconductor device capable of satisfactorily positioning a semiconductor element with respect to a predetermined position of the substrate when the semiconductor element is face-up mounted on the predetermined position of the substrate. An object is to provide a method and a manufacturing apparatus. It is another object of the present invention to provide a semiconductor device having a semiconductor element mounted on a substrate in a well-positioned state.

  In order to solve the above problems, the present invention irradiates a circuit surface of a semiconductor element with detection light, and receives the detection light that has passed through the semiconductor element on a predetermined surface side opposite to the circuit surface; Detecting the position information of the semiconductor element based on the light reception result, positioning the semiconductor element and the substrate based on the detected position information, and connecting the predetermined surface of the semiconductor element and the surface of the substrate A method for manufacturing a semiconductor device is provided.

  According to the present invention, the detection light irradiated on the circuit surface of the semiconductor element and passed through the semiconductor element is received by the predetermined surface opposite to the circuit surface, and the position information of the semiconductor element is detected based on the light reception result. Thus, even when so-called face-up mounting is performed in which a predetermined surface of the semiconductor element is connected to the surface of the substrate, the semiconductor element can be satisfactorily positioned with respect to the predetermined position of the substrate.

  Visible light is used as the detection light, the semiconductor element is thinned to such an extent that the visible light can pass, the circuit surface is irradiated with the detection light, and the detection light that has passed through the semiconductor element is on the predetermined surface side. It is possible to adopt a configuration for detecting with. Thereby, the detection light can pass (transmit) favorably through the thinned region of the semiconductor element. In addition, by using visible light as detection light, an irradiation device that irradiates the circuit surface with detection light can be made relatively inexpensive.

  A configuration may be employed in which a first mark for detecting position information of the semiconductor element is provided on a circuit surface of the semiconductor element, and the first mark is irradiated with the detection light. As a result, the position information of the semiconductor element can be satisfactorily detected using the first mark provided on the circuit surface.

  A configuration in which a conductive pattern is provided on a circuit surface of the semiconductor element and a part of the conductive pattern is used as the first mark can be employed. Thereby, the position information of the semiconductor element can be detected with high accuracy using the first mark having the same accuracy (including the position accuracy, the shape accuracy, etc.) as the conductive pattern provided on the circuit surface.

  A first mark for detecting position information of the semiconductor element is provided on a circuit surface of the semiconductor element, visible light is used as the detection light, and the first of the semiconductor elements is allowed to pass the visible light. A configuration is adopted in which a predetermined region including a region provided with a mark is thinned, the detection light is irradiated onto the circuit surface of the semiconductor element, and the detection light that has passed through the semiconductor element is detected on the predetermined surface side. Can do. As a result, the detection light can pass (transmit) favorably through the thinned predetermined region of the semiconductor element, and the position information of the semiconductor element is excellent using the first mark provided on the circuit surface of the thinned predetermined region. Can be detected. In addition, by using visible light as detection light, an irradiation device that irradiates the circuit surface with detection light can be made relatively inexpensive.

  A through hole that penetrates the circuit surface of the semiconductor element and the predetermined surface for detecting position information of the semiconductor element is provided, and the circuit surface of the semiconductor element is irradiated with the detection light and passes through the through hole. It is possible to adopt a configuration in which the detected light is detected on the predetermined surface side. As a result, the position information of the semiconductor element can be favorably detected using the detection light that has passed through the through hole.

  One of a step of providing a second mark for detecting position information of the substrate on the surface of the substrate and receiving the detection light that has passed through the semiconductor element and a step of receiving light generated from the second mark After performing, the structure which performs the other can be employ | adopted. Thereby, the positional information on a board | substrate can be detected using a 2nd mark, and a semiconductor element and a board | substrate can be positioned favorably.

  A step of providing a second mark for detecting positional information of the substrate on the surface of the substrate and receiving the detection light that has passed through the semiconductor element and a step of detecting light generated from the second mark substantially simultaneously. The configuration to be performed can be adopted. Thereby, the positional information on a board | substrate can be detected using a 2nd mark, and a semiconductor element and a board | substrate can be positioned favorably.

  According to another aspect of the present invention, there is provided a semiconductor device manufacturing apparatus for mounting a semiconductor element having a circuit surface on a surface of a substrate, a first holding portion that is movable while holding the semiconductor element, and is movable while holding the substrate. Provided at a position facing the second holding portion, an irradiation device that irradiates the circuit surface with detection light, and a predetermined surface opposite to the circuit surface of the semiconductor element. A light receiving device capable of receiving the detection light that has passed through the semiconductor element; detecting position information of the semiconductor element based on a light reception result of the light receiving device; and detecting the first information based on the detected position information. A semiconductor device comprising: a controller that drives at least one of a holding unit and the second holding unit to position the semiconductor element and the substrate, and connects a predetermined surface of the semiconductor element and the surface of the substrate. Manufacturing equipment To provide.

  According to the present invention, a light receiving device that irradiates detection light onto a circuit surface of a semiconductor element and receives the detection light that has passed through the semiconductor element at a position facing a predetermined surface opposite to the circuit surface. Since the position information of the semiconductor element is detected based on the light reception result, even when so-called face-up mounting is performed in which the predetermined surface of the semiconductor element is connected to the surface of the substrate, In contrast, the semiconductor element can be positioned satisfactorily.

  The irradiation apparatus may employ a configuration that irradiates visible light as detection light. Thereby, for example, the irradiation apparatus can be made cheaper than the apparatus that irradiates infrared light, and the apparatus cost can be suppressed.

  The light receiving device adopts a configuration for receiving the detection light that has passed through a predetermined region including a region provided with a first mark for detecting position information of the semiconductor element on a circuit surface of the semiconductor element. Can do. Thereby, the position information of the semiconductor element can be detected satisfactorily using the first mark.

  The light receiving device may employ a configuration for receiving the detection light that has passed through a through hole penetrating the circuit surface and the predetermined surface of the semiconductor element for detecting positional information of the semiconductor element. As a result, the position information of the semiconductor element can be favorably detected using the detection light that has passed through the through hole.

  The light receiving device is capable of receiving light generated from a second mark provided on the surface of the substrate in order to detect positional information of the substrate, and between the predetermined surface of the semiconductor element and the surface of the substrate. The structure arrange | positioned can be employ | adopted. Thereby, the positional information on a board | substrate can be detected using a 2nd mark, and a semiconductor element and a board | substrate can be positioned favorably.

  The light receiving device may be configured to receive one of detection light that has passed through the semiconductor element and light generated from the second mark, and then receive the other. Thereby, the positional information on a board | substrate can be detected using a 2nd mark, and a semiconductor element and a board | substrate can be positioned favorably.

  The light receiving device may employ a configuration capable of receiving the detection light that has passed through the semiconductor element and the light generated from the second mark substantially simultaneously. Thereby, the positional information on a board | substrate can be detected using a 2nd mark, and a semiconductor element and a board | substrate can be positioned favorably.

  According to the present invention, in a semiconductor device having a semiconductor element mounted on a substrate, the semiconductor element includes an alignment mark provided on the semiconductor element for detecting positional information of the semiconductor element, and the semiconductor element includes the alignment mark. Provided is a semiconductor device in which a predetermined region including a region provided with is thinner than other regions.

  According to the present invention, the predetermined region including the region where the alignment mark is provided in the semiconductor element is made thinner than the other regions, so that the position of the semiconductor element is detected using the detection light that has passed through the thinned predetermined region. Information can be detected satisfactorily. Therefore, it is possible to satisfactorily position the semiconductor element and the substrate.

  The predetermined area may be thin enough to allow visible light to pass through. Thereby, visible light can be used as the detection light, and a relatively inexpensive device can be used as the irradiation device for irradiating the detection light.

  The semiconductor element has a circuit surface and a predetermined surface opposite to the circuit surface, the surface of the substrate and the predetermined surface of the semiconductor element are connected, and the alignment mark is provided on the circuit surface. The configuration can be adopted. As a result, the position information of the semiconductor element can be satisfactorily detected using the alignment mark provided on the circuit surface.

  According to another aspect of the present invention, in a semiconductor device having a semiconductor element mounted on a substrate, the predetermined surface provided on the semiconductor element and connected to the surface of the substrate for detecting positional information of the semiconductor element, and the predetermined surface A semiconductor device having a through hole penetrating a circuit surface on the opposite side is provided.

  According to the present invention, since the through hole for detecting the position information of the semiconductor element is provided in the semiconductor element, the position information of the semiconductor element can be satisfactorily detected using the detection light that has passed through the through hole. Can do. Therefore, it is possible to satisfactorily position the semiconductor element and the substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is the X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and a direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) is the Z-axis direction. To do. Furthermore, the rotation directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment will be described. FIG. 1 is a schematic perspective view showing an embodiment of a semiconductor device manufacturing apparatus according to this embodiment. In FIG. 1, a manufacturing apparatus FA mounts a semiconductor element (semiconductor chip) 2 having a circuit surface 2A on a surface 1A of a substrate 1 such as a printed wiring board, and is movable while holding the semiconductor element 2. A first holding unit 10; a second holding unit 20 that is movable while holding the substrate 1; an irradiation device 30 that is provided at a position facing the circuit surface 2A and that irradiates the circuit surface 2A with the detection light KL; The light receiving device 40 provided at a position facing the back surface (predetermined surface) 2B opposite to the circuit surface 2A of the element 2 and capable of receiving the detection light KL that has passed through the semiconductor element 2, and the operation of the manufacturing apparatus FA as a whole. And a control device CONT for overall control.

  The first holding unit 10 sucks and holds a partial region of the circuit surface 2 </ b> A of the semiconductor element 2, and the first driving unit 12 drives the first suction unit 11 that sucks and holds the semiconductor element 2. And. The first suction unit 11 and the first drive unit 12 are connected via a connecting member 13. The first drive unit 12 can drive the first suction unit 11 that holds the semiconductor element 2 in the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction with six degrees of freedom. It is. Therefore, the control device CONT can move the semiconductor element 2 held by the first adsorption unit 11 in the direction of 6 degrees of freedom by controlling the first drive unit 12.

  The second holding unit 20 includes a second suction unit 21 that sucks and holds the back surface of the substrate 1 and a second drive unit 22 that drives the second suction unit 21 that sucks and holds the substrate 1. The second drive unit 22 can drive the second suction unit 21 that holds the substrate 1 in the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction with six degrees of freedom. is there. Therefore, the control device CONT can move the substrate 1 held by the second adsorption unit 21 in the direction of 6 degrees of freedom by controlling the second drive unit 22.

  The irradiation device 30 is provided at a predetermined position of the connecting member 13 and is provided at a position facing the circuit surface 2 </ b> A of the semiconductor element 2 held by the first suction unit 11. The irradiation device 30 irradiates the detection light KL to a region other than the partial region held by the first adsorption unit 11 in the circuit surface 2 </ b> A of the semiconductor element 2. Moreover, the irradiation apparatus 30 irradiates visible light as the detection light KL.

  The light receiving device 40 includes an imaging unit 41 and a third drive unit 42 that drives the imaging unit 41. The imaging unit 41 includes a back surface 2B of the semiconductor element 2 held by the first suction unit 11 of the first holding unit 10 and a surface 1A of the substrate 1 held by the second suction unit 21 of the second holding unit 20. Arranged between. The imaging unit 41 includes a first imaging element 43 that can capture an image of the semiconductor element 2 and a second imaging element 44 that can capture an image of the substrate 1. The first and second image sensors 43 and 44 are configured to include, for example, a CCD or the like. The imaging surface of the first imaging element 43 is provided on the upper surface of the imaging unit 41 and faces the back surface 2 </ b> B of the semiconductor element 2 held by the first adsorption unit 11. The imaging surface of the second imaging element 44 is provided on the lower surface of the imaging unit 41 and faces the surface 1 </ b> A of the substrate 1 held by the second adsorption unit 21. The light receiving device 40 can acquire the image of the semiconductor element 2 and the image of the substrate 1 almost simultaneously using the first and second imaging elements 43 and 44 provided in the imaging unit 41. The imaging results (light reception signals) of the first and second imaging elements 43 and 44 are output to the control device CONT. Further, the third drive unit 42 can drive the imaging unit 41 in directions of six degrees of freedom of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. Therefore, the control device CONT can move the imaging unit 41 including the first and second imaging elements 43 and 44 in the direction of six degrees of freedom by controlling the third driving unit 42.

  A chip holder 50 that holds a plurality of semiconductor elements 2 is provided at a position aligned with the second holding unit 20. The chip holder 50 holds the back surface 2B of the semiconductor element 2, and the circuit surface 2A of the semiconductor element 2 held by the chip holder 50 faces upward (+ Z direction). When mounting the semiconductor element 2 on the substrate 1, the control device CONT uses the first holding unit 10 to hold the circuit surface 2 </ b> A of the predetermined semiconductor element 2 among the plurality of semiconductor elements 2 on the chip holder 50, Transport to the substrate 1 held by the second holding unit 20.

  2A is a plan view of the semiconductor element 2 as viewed from the circuit surface 2A side, FIG. 2B is a plan view of the substrate 1 as viewed from the surface 1A side, and FIG. 3 illustrates the irradiation device 30, the semiconductor element 2, and the light reception. It is the figure which showed typically the positional relationship of the apparatus 40 and the board | substrate 1. FIG.

  As shown in FIG. 2A, a first alignment mark 61 for detecting position information of the semiconductor element 2 is provided at a predetermined position on the circuit surface 2 </ b> A of the semiconductor element 2. The first alignment mark 61 is provided in a region of the circuit surface 2A of the semiconductor element 2 other than a partial region held by the first suction unit 11 of the first holding unit 10. As shown in FIG. 2B, a second alignment mark 62 for detecting positional information of the substrate 1 is provided at a predetermined position on the surface 1A of the substrate 1. In the present embodiment, each of the first alignment mark 61 and the second alignment mark 62 has substantially the same size and shape.

  The circuit surface 2A of the semiconductor element 2 is provided with a conductive pattern (wiring portion) made of a conductive material such as gold, silver, copper, or aluminum. The conductive pattern is formed with high accuracy using a predetermined method such as a photolithography method. The first alignment mark 61 of the present embodiment is formed on the same layer together with the conductive pattern (wiring portion). Is formed. That is, in this embodiment, a part of the conductive pattern is used as the first alignment mark 61, and the first alignment mark is also formed of the above-described conductive material. Therefore, the shape accuracy and position accuracy of the first alignment mark 61 are as high as the conductive pattern.

  As shown in FIG. 3, the irradiation device 30 irradiates the detection light KL onto the circuit surface 2 </ b> A of the semiconductor element 2 held by the first holding unit 10. As described above, the first alignment mark 61 is provided in a region other than the partial region held by the first suction unit 11 of the first holding unit 10 in the circuit surface 2A of the semiconductor element 2. The irradiation device 30 can irradiate the first alignment mark 61 provided on the circuit surface 2A with the detection light KL. In addition, the 1st holding | maintenance part 10 is not illustrated in FIG.

  The semiconductor element 2 is formed to a thickness of, for example, 50 μm or less, and is thin enough to allow the detection light KL made of visible light to pass (transmit). In the present embodiment, the semiconductor element 2 includes silicon (Si). Therefore, the detection light KL irradiated to the circuit surface 2A of the semiconductor element 2 by the irradiation device 30 is emitted from the back surface 2B side after passing through (transmitting) the semiconductor element 2, and disposed at a position facing the back surface 2B. The light receiving device 40 (the first image sensor 43) can be reached. As described above, the light receiving device 40 (first imaging element 43) can receive the detection light KL that has passed through the semiconductor element 2 on the back surface 2B side.

  In addition, the irradiation device 30 irradiates the predetermined region including at least the region where the first alignment mark 61 is provided on the circuit surface 2A with the detection light KL. The light receiving device 40 (first imaging element 43) receives the detection light KL that has passed through a predetermined area including the first alignment mark 61 in the circuit surface 2A of the semiconductor element 2, thereby obtaining an image of the first alignment mark 61. It can be acquired.

  The light receiving device 40 can receive light generated from the second alignment mark 62 provided on the surface 1 </ b> A of the substrate 1 in order to detect the position information of the substrate 1 using the second imaging element 44. The light receiving device 40 (second imaging element 44) can acquire an image of the second alignment mark 62 by receiving the light generated from the second alignment mark 62.

  In this embodiment, the second alignment mark 62 provided on the surface 1A of the substrate 1 is not actively irradiated with illumination light (detection light), but the second alignment mark 62 is illuminated with illumination light. May be provided, and the second alignment mark 62 may be positively irradiated with illumination light by the second irradiation device.

  The control device CONT controls at least a part of the first drive unit 12 of the first holding unit 10, the second drive unit 22 of the second holding unit 20, and the third drive unit 42 of the light receiving device 40. As shown in FIG. 3, the semiconductor device 2 and the image pickup device are arranged so that the first image pickup device 43 and the second image pickup device 44 can acquire the images of the first and second alignment marks 61 and 62 almost simultaneously. The positional relationship between the part 41 and the substrate 1 can be adjusted.

  As described above, in the present embodiment, a part of the conductive pattern is used as the first alignment mark 61, but the first alignment mark 61 among the layers other than the layer where the first alignment mark 61 is provided. In a region overlapping with the light-shielding portion, a light shielding portion that blocks the detection light KL that has passed through a predetermined region including the first alignment mark 61 such as a conductive pattern is not formed. Therefore, the light receiving device 40 (first imaging element 43) can acquire an image of the first alignment mark 61 satisfactorily.

  Next, a procedure for mounting the semiconductor element 2 on the substrate 1 using the manufacturing apparatus FA described above will be described with reference to the flowchart of FIG.

  First, the control device CONT uses the first holding unit 10 to hold a predetermined semiconductor element 2 to be mounted on the substrate 1 among the plurality of semiconductor elements 2 held by the chip holder 50, and the semiconductor element 2 is unloaded from the chip holder 50. The substrate 1 is held on the second suction portion 21 of the second holding portion 20.

  Next, the control device CONT controls at least a part of the first drive unit 12 of the first holding unit 10, the second drive unit 22 of the second holding unit 20, and the third drive unit 42 of the light receiving device 40. As shown in FIG. 3, the semiconductor element 2 and the imaging unit 41 are configured so that the first imaging element 43 and the second imaging element 44 can acquire the images of the first and second alignment marks 61 and 62 almost simultaneously. And the positional relationship of the substrate 1 is roughly adjusted.

  Here, the manufacturing apparatus FA includes a detection device (not shown) for detecting position information of the semiconductor element 2 held by the first holding unit 10, the substrate 1 held by the second holding unit 20, and the light receiving device 40. It has. The control device CONT uses the detection device to detect the position information of the semiconductor element 2, the substrate 1, and the light receiving device 40 in the coordinate system defined by the detection device, and the first holding unit 10 and the second holding device 10. The holding unit 20 and at least a part of the light receiving device 40 are driven.

  The light receiving device 40 is disposed between the semiconductor element 2 held by the first holding unit 10 and the substrate 1 held by the second holding unit 20. In the present embodiment, the control device CONT arranges the light receiving device 40 between the semiconductor element 2 and the substrate 1 and then fixes the position of the light receiving device 40.

  The control device CONT emits the detection light KL made of visible light from the irradiation device 30 and irradiates the circuit surface 2A of the semiconductor element 2 with the detection light KL. Since the semiconductor element 2 is thin enough to pass (transmit) the detection light KL made of visible light, the detection light KL irradiated to the circuit surface 2A of the semiconductor element 2 has passed through the semiconductor element 2. After that, it is injected from the back surface 2B side. The detection light KL passing through the semiconductor element 2 and emitted from the back surface 2B is received on the back surface 2B side by the light receiving device 40 provided at a position facing the back surface 2B.

  The irradiation device 30 is configured to irradiate a predetermined region including the first alignment mark 61 provided on the circuit surface 2 </ b> A of the semiconductor element 2 with the detection light KL, and has passed through the predetermined region including the first alignment mark 61. The detection light KL is incident on the first image sensor 43 of the light receiving device 40. The first imaging element 43 of the light receiving device 40 acquires the image of the first alignment mark 61 by receiving the detection light KL via the first alignment mark 61.

  Further, the light generated from the second alignment mark 62 provided on the surface 1 </ b> A of the substrate 1 is received by the second imaging element 44 of the light receiving device 40. The second image sensor 44 of the light receiving device 40 receives the light generated from the second alignment mark 62 to obtain an image of the second alignment mark 62.

  In this way, the light receiving device 40 is generated from the detection light KL that has passed through a predetermined region including the first alignment mark 61 in the semiconductor element 2 and the second alignment mark using the first imaging element 43 and the second imaging element 44. The first alignment mark 61 and the second alignment mark 62 are simultaneously detected by receiving the received light substantially simultaneously (step SP1).

  Here, a predetermined first reference mark is formed on the imaging surface of the first imaging element 43, and a predetermined second reference mark is formed on the imaging surface of the second imaging element 44. Based on the imaging result of the first imaging device 43 and the detection result of the detection device, the control device CONT is on the imaging surface of the first imaging device 43 with respect to the first reference mark in the coordinate system defined by the detection device. The positional relationship of the image of the formed first alignment mark 61 can be obtained. Similarly, the control device CONT captures an image of the second image sensor 44 with respect to the second reference mark in the coordinate system defined by the detection device based on the imaging result of the second image sensor 43 and the detection result of the detection device. The positional relationship of the images of the second alignment marks 62 formed on the surface can be obtained.

  Thereby, the control device CONT has the coordinates defined by the detection device based on the image information of the first alignment mark 61, that is, the light reception result when the detection light KL is received by the light receiving device 40 (first imaging element 43). The position information of the first alignment mark 61 in the system, and hence the position information of the semiconductor element 2 can be detected. Similarly, the control device CONT detects the image information of the second alignment mark 62, that is, based on the light reception result when the light generated from the second alignment mark 62 is received by the light receiving device 40 (second imaging element 44). The position information of the second alignment mark 62 in the coordinate system defined by the apparatus, and thus the position information of the substrate 1 can be detected.

  In the present embodiment, a part of the conductive pattern (wiring portion) provided on the circuit surface 2A of the semiconductor element 2 is used as the first alignment mark 61, so that it is equivalent to the conductive pattern provided on the circuit surface 2A. The position information of the semiconductor element 2 can be detected with high accuracy by using the first alignment mark 61 having the following accuracy (including position accuracy, shape accuracy, etc.).

  After detecting the position information of each of the semiconductor element 2 and the substrate 1, the control device CONT drives at least one of the first holding unit 10 and the second holding unit 20 based on the detected position information, and the semiconductor element 2 and the substrate 1 are positioned (step SP2).

  Specifically, the control device CONT uses the detection device to detect the position information of each of the semiconductor element 2, the substrate 1, and the light receiving device 40 in the coordinate system defined by the detection device, and the first reference mark And the image of the first alignment mark 61 formed on the image pickup surface of the first image pickup device 43 have a predetermined positional relationship, and the second reference mark and the first image formed on the image pickup surface of the second image pickup device 44. At least one of the first holding unit 10 and the second holding unit 20 is driven so that the image of the second alignment mark 62 has a predetermined positional relationship. In the present embodiment, the first reference mark and the image of the first alignment mark 61 formed on the imaging surface of the first image sensor 43 match, and the second reference mark and the imaging surface of the second image sensor 44 are matched. When the image of the second alignment mark 62 formed above matches, it is determined that a predetermined position (position where the semiconductor element 2 is to be mounted) on the substrate 1 and the semiconductor element 2 are in a desired positional relationship. .

  After the predetermined position of the substrate 1 (position where the semiconductor element 2 is to be mounted) and the semiconductor element 2 are set to a desired positional relationship, the control device CONT maintains the positional relationship between the semiconductor element 2 and the substrate 1 in the XY directions. In this state, at least one of the first holding unit 10 and the second holding unit 20 is driven, and the back surface 2B of the semiconductor element 2 held by the first holding unit 10 and the substrate held by the second holding unit 20 1 surface 1A is brought close to each other, and the back surface 2B of the semiconductor element 2 and the surface 1A of the substrate 1 are connected via an adhesive or the like (step SP3). Thereby, the semiconductor element 2 is mounted on the surface 1A of the substrate 1. The semiconductor element 2 is so-called face-up mounted on the substrate 1 with its circuit surface 2A facing upward.

  Next, the control device CONT electrically connects the connection terminal provided on the circuit surface 2A of the semiconductor element 2 and the substrate side terminal provided on the substrate 1 by wiring (step SP4). After mounting the semiconductor element 2 on the substrate 1, the connection terminal provided on the circuit surface 2 </ b> A of the semiconductor element 2 and the substrate-side terminal provided on the substrate 1 are electrically connected by wiring, whereby the semiconductor device is manufactured. It is formed.

  FIG. 5 is a schematic perspective view showing the semiconductor device S having the semiconductor element 2 mounted on the substrate 1. The semiconductor element 2 has a connection terminal 3. The connection terminal 3 is provided on the circuit surface 2 </ b> A of the semiconductor element 2. The semiconductor element 2 has a substantially rectangular shape in plan view, and a plurality of connection terminals 3 are provided along one side of the circuit surface 2A. The circuit surface 2A is the upper surface of the semiconductor element 2, and a plurality of connection terminals 3 are provided in the Y-axis direction along one side of the rectangular circuit surface 2A on the -X side. The surface 3A of the connection terminal 3 is exposed on the circuit surface 2A, and the circuit surface 2A includes the surface 3A of the connection terminal 3.

  The semiconductor element 2 is mounted on the substrate 1 by connecting the back surface 2B opposite to the circuit surface 2A to the surface 1A of the substrate 1. The substrate 1 includes substrate side terminals (external terminals) 4. The board-side terminal 4 is provided on the surface 1A of the board 1. A plurality of substrate side terminals 4 are provided side by side in the Y-axis direction so as to correspond to the connection terminals 3.

  The circuit surface 2A of the semiconductor element 2 and the surface 1A of the substrate 1 are connected by the inclined surface 5. An insulating resin is provided on the side of the semiconductor element 2 so as to surround the semiconductor element 2, and the inclined surface 5 is formed by the insulating resin.

  The connection terminal 3 provided on the semiconductor element 2 and the substrate side terminal 4 provided on the substrate 1 are electrically connected via a wiring (conductive film) 6. As a material (conductive material) for forming the wiring 6, for example, gold, silver, copper, aluminum, nickel or the like can be used. A part of the wiring 6 is provided on the inclined surface 5. The inclined surface 5 eliminates a large step between the circuit surface 2 </ b> A of the semiconductor element 2 and the surface 1 </ b> A of the substrate 1. By eliminating the step, the wiring 6 for electrically connecting the connection terminal 3 provided on the circuit surface 2A of the semiconductor element 2 and the substrate-side terminal 4 provided on the surface 1A of the substrate 1 is cut by bending. The inconvenience is prevented.

  In this way, the semiconductor element 2 is connected to the substrate 1 in a so-called face-up mounting form, with its circuit surface 2A facing upward and its back surface 2B connected to the substrate 1.

  After connecting the back surface 2B of the semiconductor element 2 and the surface 1A of the substrate 1, an inclined surface 5 for connecting the circuit surface 2A of the semiconductor element 2 and the surface 1A of the substrate 1 is provided. The inclined surface 5 can be formed by, for example, a predetermined patterning method such as a photolithography method after applying an insulating resin on the substrate 1.

  Next, the wiring 6 for electrically connecting the connection terminal 3 provided on the circuit surface 2A of the semiconductor element 2 and the substrate side terminal 4 provided on the surface 1A of the substrate 1 is formed. The wiring 6 is formed based on a droplet discharge method (inkjet method) using a droplet discharge device IJ described later. Thus, the semiconductor device S is manufactured.

  As described above, the detection light KL irradiated to the circuit surface 2A of the semiconductor element 2 and passed through the semiconductor element 2 is received on the back surface 2B side, and the position information of the semiconductor element 2 is detected based on the light reception result. Thus, the semiconductor element 2 can be satisfactorily positioned with respect to a predetermined position of the substrate 1 even when so-called face-up mounting is performed in which the back surface 2B of the semiconductor element 2 is connected to the front surface 1A of the substrate 1. .

  Further, since visible light is used as the detection light KL and the semiconductor element 2 is thinned to such an extent that visible light can pass, the detection light KL can pass (transmit) well in the thinned area of the semiconductor element 2. . Further, by using visible light as the detection light KL, it is possible to use an irradiation device that is relatively cheaper than an irradiation device that irradiates, for example, infrared light as the detection light KL. Therefore, the device cost can be reduced.

Second Embodiment
Next, a second embodiment will be described. Constituent parts that are the same as or equivalent to those in the first embodiment are given the same reference numerals, and descriptions thereof are simplified or omitted.

  In FIG. 6, in the semiconductor element 2, the predetermined area A including the area where the first alignment mark 61 is provided is thinner than the other areas. The first alignment mark 61 is provided on the circuit surface 2 </ b> A of the semiconductor element 2. The semiconductor element 2 includes silicon (Si). The thickness of the predetermined region A is set to a thickness (for example, 50 μm or less) that allows the detection light KL made of visible light to pass (transmit). On the other hand, the other region has a thickness of about 100 μm, for example. That is, in the first embodiment described above, the entire thickness of the semiconductor element 2 is thin enough to allow visible light to pass through. However, as shown in FIG. 6, the predetermined region A including the first alignment mark 61 is formed. Only the thickness may be thin enough to allow visible light to pass through.

<Third Embodiment>
Next, a third embodiment will be described. In FIG. 7, the semiconductor element 2 has a through hole 63 that penetrates the circuit surface 2 </ b> A and the back surface 2 </ b> B for detecting position information of the semiconductor element 2. The control device CONT irradiates the predetermined region including the through hole 63 in the circuit surface 2A of the semiconductor element 2 from the irradiation device 30 and the detection light KL that has passed through the through hole 63 is provided on the back surface 2B side. Detected by the light receiving device 40. As described above, the position information of the semiconductor element 2 can also be detected by using the through hole 63. In this case, even if the thickness of the semiconductor element 2 is so thick that visible light cannot pass (for example, about 100 μm), the detection light KL irradiated to the circuit surface 2A can be received on the back surface 2B side.

  Further, when forming each layer of the semiconductor element 2, in order to electrically connect the conductive pattern between the layers, a through hole (contact hole) is formed using a predetermined method such as a photolithography method, In some cases, a conductive material is disposed in the through hole, but the through hole 63 for detecting the position information of the semiconductor element 2 can be formed in the same process as the above through hole (contact hole). . Therefore, the position information of the semiconductor element 2 can be detected with high accuracy by using the through hole 63 having the same accuracy (including position accuracy and shape accuracy) as the above-described through hole (contact hole).

  FIGS. 8A and 8B are diagrams for explaining an example of the through hole 63. As shown in FIG. 8A, the through hole 63 may have a substantially cross shape in plan view. Further, as shown in FIG. 8B, the through hole 63 may have a substantially circular shape in plan view. In addition, the through hole 63 is not limited to the shape shown in FIG. 8, and may have any shape such as a rectangular shape in plan view.

<Fourth embodiment>
In the above-described embodiment, the light receiving device 40 has the imaging surface of the first imaging element 43 provided on the upper surface of the imaging unit 41 and the imaging surface of the second imaging element 44 provided on the lower surface. The detection light KL that has passed through the semiconductor element 2 and the light generated from the second alignment mark 62 of the substrate 1 are received substantially simultaneously, but the detection light KL that has passed through the semiconductor element 2 and the second alignment mark of the substrate 1 are received. The position information of the semiconductor element 2 and the substrate 1 may be detected by receiving one of the light generated from 62 and then receiving the other. For example, the imaging surface of the imaging element is provided only on one surface (for example, the upper surface) of the imaging unit 41, and the light receiving device 40 receives the detection light KL that has passed through the semiconductor element 2 with the imaging element, thereby Position information of one alignment mark 61 (or through hole 63) is detected. Here, the light receiving device 40 includes a rotation mechanism that rotates the imaging unit 41. After the first alignment mark 61 (or the through hole 63) is detected, the imaging unit 41 is rotated using the rotation mechanism to capture an image. The imaging surface of the element is opposed to the second alignment mark 62 of the substrate 1. In this state, the light receiving device 40 detects the second alignment mark 62 using the image sensor provided in the imaging unit 41. As described above, the position of the semiconductor element 2 and the substrate 1 can also be obtained by receiving one of the detection light KL passing through the semiconductor element 2 and the light generated from the second alignment mark 62 of the substrate 1 and then receiving the other. Information can be detected.

  In the first to fourth embodiments described above, the irradiation device 30 is provided at a position facing the circuit surface 2A of the semiconductor element 2, but the irradiation device 30 is provided at a position facing the back surface 2B and the back surface 2B. You may make it irradiate the detection light KL from the side.

<Droplet ejection device>
As described above, the wiring 6 that electrically connects the connection terminal 3 of the semiconductor element 2 and the substrate-side terminal 4 of the substrate 1 is formed based on a droplet discharge method. Hereinafter, an example of a droplet discharge device and a droplet discharge method will be described.

  FIG. 9 is a perspective view showing a schematic configuration of a droplet discharge device (inkjet device) IJ used in a droplet discharge method (inkjet method). The droplet discharge device IJ constitutes a part of a manufacturing apparatus FA that manufactures the semiconductor device S. The droplet discharge device IJ discharges droplets of a liquid material from nozzles of a droplet discharge head (inkjet head). The droplet discharge head 301, an X-axis direction drive shaft 304, a Y-axis direction guide shaft 305, It includes a control device CONT, a stage 307, a cleaning mechanism 308, a base 309, a heater 315, and the like.

  The stage 307 supports the substrate 1 including the semiconductor element 2 on which the liquid material (ink) is disposed and the inclined surface 5 by the droplet discharge device IJ, and fixes the substrate 1 to a reference position (not shown). A fixing mechanism is provided.

  The droplet discharge head 301 is a multi-nozzle type droplet discharge head including a plurality of discharge nozzles 325, and the longitudinal direction and the X-axis direction coincide with each other. The plurality of nozzles are provided at regular intervals along the X-axis direction on the lower surface of the droplet discharge head 301. A liquid material is discharged from the discharge nozzle of the droplet discharge head 301 to the substrate 1 supported by the stage 307.

  An X-axis direction drive motor 302 is connected to the X-axis direction drive shaft 304. The X-axis direction drive motor 302 is a stepping motor or the like, and rotates the X-axis direction drive shaft 304 when a drive signal in the X-axis direction is supplied from the control device CONT. When the X-axis direction drive shaft 304 rotates, the droplet discharge head 301 moves in the X-axis direction.

  The Y-axis direction guide shaft 305 is fixed so as not to move with respect to the base 309. The stage 307 includes a Y-axis direction drive motor 303. The Y-axis direction drive motor 303 is a stepping motor or the like, and moves the stage 307 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

  The control device CONT supplies a droplet discharge control voltage to the droplet discharge head 301. Further, the X-axis direction drive motor 302 has a drive pulse signal for controlling the movement of the droplet discharge head 301 in the X-axis direction, and the Y-axis direction drive motor 303 has a drive pulse signal for controlling the movement of the stage 307 in the Y-axis direction. Supply.

  The cleaning mechanism 308 is for cleaning the droplet discharge head 301. The cleaning mechanism 308 includes a Y-axis direction drive motor (not shown). The cleaning mechanism moves along the Y-axis direction guide shaft 305 by driving the Y-axis direction drive motor. The movement of the cleaning mechanism 308 is also controlled by the control device CONT.

  Here, the heater 315 is means for heat-treating the substrate 1 by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material disposed on the substrate 1. The heater 315 is also turned on and off by the control device CONT.

  FIG. 10 is a schematic configuration diagram of a droplet discharge head for explaining the principle of discharging a liquid material by a piezo method. In FIG. 10, a piezo element 322 is disposed adjacent to a liquid chamber 321 that stores a liquid material (ink). The liquid material is supplied to the liquid chamber 321 via a liquid material supply system 323 including a material tank that stores the liquid material. The piezo element 322 is connected to a drive circuit 324, and a voltage is applied to the piezo element 322 via the drive circuit 324 to deform the piezo element 322 and elastically deform the liquid chamber 321. And the liquid material is discharged from the nozzle 325 by the change of the internal volume at the time of this elastic deformation. In this case, the amount of distortion of the piezo element 322 can be controlled by changing the value of the applied voltage.

  In addition, the strain rate of the piezo element 322 can be controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

  Returning to FIG. 9, in the droplet discharge device IJ, the droplet discharge head 301 and the stage 307 that supports the substrate 1 are relatively scanned and moved from the droplet discharge head 301 to the substrate 1 (semiconductor element 2). A liquid material is discharged in the form of droplets. The discharge nozzles 325 of the droplet discharge head 301 are provided at regular intervals at least in the X-axis direction, which is the non-scanning direction. In FIG. 9, the Y-axis direction is the scanning direction. In FIG. 9, the droplet discharge head 301 is disposed at a right angle to the moving direction of the substrate 1, but the angle of the droplet discharging head 301 is adjusted so as to intersect the moving direction of the substrate 1. Also good. In this way, the pitch between the nozzles can be adjusted by adjusting the angle of the droplet discharge head 301. Further, the distance between the substrate 1 and the nozzle surface may be arbitrarily adjusted.

  When forming the wiring 6, the circuit surface 2 </ b> A of the semiconductor element 2 including the surface 3 </ b> A of the connection terminal 3 is moved from the droplet discharge head 301 while relatively moving the semiconductor element 2 and the droplet discharge head 301. By discharging droplets of a liquid material containing a conductive material to each of the inclined surface 5 and the surface 1A of the substrate 1 including the substrate side terminal 4, the connection terminal 3 and the substrate side terminal 4 are electrically connected. Wiring 6 connected to can be formed. By discharging a liquid material containing a conductive material whose liquid amount per droplet is controlled from a nozzle 325 provided in the droplet discharge head 301, the wiring 6 having a desired line width can be formed.

  By arranging a liquid material (conductive material) by discharging a plurality of droplets from the droplet discharge head 301, the shape of the conductive film (wiring) 6 containing the conductive material can be arbitrarily set, It is possible to increase the thickness of the conductive film (wiring) 6 by stacking the films. For example, by repeating a step of disposing the conductive material on the semiconductor element 2 or the substrate 1 and a step of drying the conductive material, a dry film of the conductive material is laminated to increase the thickness of the conductive film 6. The Further, by dropping droplets containing a conductive material from a plurality of nozzles 325 provided in the droplet discharge head 301, a plurality of wirings 6 can be formed simultaneously.

  By forming the wiring 6 based on the droplet discharge method, it is possible to arrange the material in the semiconductor element 2, the inclined surface 5, or a desired local region on the substrate 1. The film formation process is simple and the material used is less wasteful. In addition, since the amount and timing of the material arrangement can be controlled for each part, it is easy to increase the thickness of the material film according to the characteristics of the material used. Therefore, the quality can be stabilized by increasing the thickness of the wiring 6, and the cost can be reduced by simplifying the manufacturing process and reducing the materials used.

  Here, the ink (liquid material) suitable for ejection from the droplet ejection head 301 used in this example will be described. The ink (liquid material) used in the present embodiment is a solution in which a resin material is dissolved in a solvent (liquid material for resin protrusions), or a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium (liquid material for conductive films). Or a precursor thereof. Examples of the conductive fine particles include metal fine particles containing, for example, gold, silver, copper, palladium, niobium and nickel, as well as precursors, alloys, oxides thereof, and fine particles such as conductive polymers and indium tin oxide. Used. The solvent or dispersion medium is not particularly limited as long as it can dissolve the above resin or disperse the above conductive fine particles and does not cause aggregation.

  FIG. 11 is a schematic diagram illustrating an example of a process of forming a linear film pattern on a substrate using an inkjet method. In the material arrangement process shown in each drawing, the liquid material is ejected as droplets from the head 301, and the droplets are arranged on the substrate 1 at a certain distance (pitch). Then, a film pattern is formed on the substrate 1 by repeating this droplet placement operation.

  In the example of FIG. 11, first, as shown in FIG. 11A, the droplets L <b> 1 ejected from the head 301 are separated from each other by a certain interval so that the droplets L <b> 1 do not contact each other on the substrate 1. 1 is placed. That is, the droplets L1 are sequentially disposed on the substrate 1 at a pitch P1 larger than the diameter of the droplets L1 immediately after being disposed on the substrate 1.

  After disposing the droplet L1 on the substrate 1 including the semiconductor element 2, a drying process is performed as necessary in order to remove the solvent or the dispersion medium. The drying process may be performed using lamp annealing in addition to a general heating process using a heating means such as a hot plate or an electric furnace. The light source used for lamp annealing is not particularly limited, but excimer lasers such as infrared lamps, xenon lamps, YAG lasers, argon lasers, carbon dioxide lasers, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used. Also, the drying process can proceed simultaneously with the discharge of the liquid material. For example, by preheating the substrate or using a solvent or dispersion medium having a low boiling point along with cooling of the liquid discharge head, drying of the droplet proceeds immediately after the droplet is placed on the substrate. be able to.

  Next, as shown in FIG. 11B, the above-described droplet placement operation is repeated. That is, as in the previous time shown in FIG. 11A, the liquid material is ejected from the head 301 as droplets L2, and the droplets L2 are arranged on the substrate 1 at regular intervals. At this time, the distance interval between the droplets L2 is the same as the previous time (pitch P2 = P1), and the droplets L2 do not contact each other. Further, the position at which the placement of the droplet L2 is started is shifted by a predetermined distance S1 from the position at which the previous droplet L1 is placed. That is, the center position of the previous droplet L1 disposed on the substrate 1 and the center position of the current droplet L2 are in a positional relationship separated by the distance S1. In this embodiment, the shifting distance (shift amount S1) is narrower than the pitches P1 and P2 (S1 <P1 = P2), and the droplet L2 next to the droplet L1 previously disposed on the substrate 1 is used. Are partly overlapped.

  When the droplet L2 is placed on the substrate 1, the current droplet L2 and the previous droplet L1 are in contact with each other, but since the previous droplet L1 has already had the solvent or the dispersion medium removed completely or to some extent, It is unlikely that both merge and spread on the substrate 1.

  In FIG. 11B, the position where the droplet L2 starts to be arranged is the same side as the previous time (left side shown in FIG. 11B), but the opposite side (right side shown in FIG. 11B). It is good. In this case, the distance of relative movement between the head 301 and the substrate 1 can be reduced.

  In addition, after the droplet L2 is disposed on the substrate 1, a drying process is performed as necessary in order to remove the solvent and the dispersion medium as in the previous case. In this case as well, not only the removal of the solvent and the dispersion medium but also the degree of heating and light irradiation can be increased until the dispersion is converted into a conductive film, but it is sufficient if the solvent and the dispersion medium can be removed to some extent.

  Thereafter, as shown in FIG. 11C, the above-described droplet placement operation is repeated a plurality of times. At each time, the distance interval (pitch Pn) between the droplets Ln to be arranged is the same as the distance of the first time (pitch Pn = P1), and is always constant. Therefore, the droplets Ln immediately after being arranged on the substrate 1 are not in contact with each other, and the droplets are prevented from being combined and spreading on the substrate 1. In addition, since the surface of the substrate 1 is processed to be liquid repellent in advance, the spread of droplets disposed on the substrate 1 is suppressed. And the thickness of the liquid material arrange | positioned on the board | substrate 1 increases by arrange | positioning droplets up and down.

  Further, in FIG. 11C, when the droplet placement operation is repeated a plurality of times, the position at which the placement of the droplet Ln is started is shifted by a predetermined distance from the position at which the previous droplet is placed each time. By repeating this droplet placement operation, the gaps between the droplets placed on the substrate 1 are filled, and a linear continuous pattern is formed. Note that the film pattern formed on the substrate is always formed by droplet arrangement with the same pitch, and the entire structure has undergone almost the same formation process, so that the structure is uniform.

  By the way, when the liquid material (ink) is disposed on the semiconductor element 2, the inclined surface 5, or the substrate 1, the surface of the substrate 1 including the semiconductor element 2 and the inclined surface 5 is made liquid repellent with respect to the liquid material in advance. By processing, the spread of the droplets disposed on the substrate 1 can be suppressed, and the film can be made thicker and the shape can be stabilized. As a method for controlling the liquid repellency (wetting property) of the surface, for example, a method of forming a self-assembled film on the surface of the substrate as disclosed in JP-A-2002-164635 can be used. . Alternatively, a plasma treatment method can be used.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

It is a schematic perspective view which shows one Embodiment of the manufacturing apparatus of a semiconductor device. It is a top view which shows an example of a semiconductor element and a board | substrate. It is a mimetic diagram for explaining one embodiment of a manufacturing device of a semiconductor device. It is a flowchart for demonstrating one Embodiment of the manufacturing method of a semiconductor device. It is a schematic perspective view which shows an example of a semiconductor device. It is a schematic diagram for demonstrating another embodiment of the manufacturing apparatus of a semiconductor device. It is a schematic diagram for demonstrating another embodiment of the manufacturing apparatus of a semiconductor device. It is a top view which shows an example of a semiconductor element. It is a schematic perspective view which shows a droplet discharge apparatus. It is a figure for demonstrating a droplet discharge head. It is a schematic diagram for demonstrating an example of the formation process of the electrically conductive film based on the droplet discharge method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 1A ... Surface, 2 ... Semiconductor element, 2A ... Circuit surface, 2B ... Back surface (predetermined surface), 10 ... 1st holding part, 20 ... 2nd holding part, 30 ... Irradiation device, 40 ... Light receiving device, 61 ... 1st alignment mark (1st mark), 62 ... 2nd alignment mark (2nd mark), 63 ... Through-hole, A ... Predetermined area | region, CONT ... Control apparatus, FA ... Manufacturing apparatus, KL ... Detection light, S ... Semiconductor devices

Claims (19)

Irradiating the circuit surface of the semiconductor element with detection light, and receiving the detection light that has passed through the semiconductor element on a predetermined surface side opposite to the circuit surface;
Detecting position information of the semiconductor element based on the light reception result;
A method of manufacturing a semiconductor device, comprising: positioning the semiconductor element and the substrate based on the detected position information, and connecting a predetermined surface of the semiconductor element and a surface of the substrate.   Visible light is used as the detection light, the semiconductor element is thinned to such an extent that the visible light can pass, the circuit surface is irradiated with the detection light, and the detection light that has passed through the semiconductor element is on the predetermined surface side. The manufacturing method of Claim 1 detected by these.   The manufacturing method according to claim 1, wherein a first mark for detecting position information of the semiconductor element is provided on a circuit surface of the semiconductor element, and the first mark is irradiated with the detection light.   The manufacturing method according to claim 1, wherein a conductive pattern is provided on a circuit surface of the semiconductor element, and a part of the conductive pattern is used as the first mark.   A first mark for detecting position information of the semiconductor element is provided on a circuit surface of the semiconductor element, visible light is used as the detection light, and the first of the semiconductor elements is allowed to pass the visible light. The predetermined region including the region where the mark is provided is thinned, the circuit surface of the semiconductor element is irradiated with the detection light, and the detection light that has passed through the semiconductor element is detected on the predetermined surface side. Production method.   A through hole that penetrates the circuit surface of the semiconductor element and the predetermined surface for detecting position information of the semiconductor element is provided, and the circuit surface of the semiconductor element is irradiated with the detection light and passes through the through hole. The manufacturing method according to claim 1, wherein the detected light is detected on the predetermined surface side.   One of a step of providing a second mark for detecting position information of the substrate on the surface of the substrate and receiving the detection light that has passed through the semiconductor element and a step of receiving light generated from the second mark The manufacturing method as described in any one of Claims 1-6 which performs the other after performing.   A step of providing a second mark for detecting positional information of the substrate on the surface of the substrate and receiving the detection light that has passed through the semiconductor element and a step of detecting light generated from the second mark substantially simultaneously. The manufacturing method as described in any one of Claims 1-6 performed. In a semiconductor device manufacturing apparatus for mounting a semiconductor element having a circuit surface on a surface of a substrate,
A first holding part that is movable while holding the semiconductor element;
A second holding unit movable while holding the substrate;
An irradiation device provided at a position facing the circuit surface and irradiating the circuit surface with detection light;
A light receiving device provided at a position facing a predetermined surface opposite to the circuit surface of the semiconductor element and capable of receiving the detection light that has passed through the semiconductor element;
Position information of the semiconductor element is detected based on a light reception result of the light receiving device, and at least one of the first holding part and the second holding part is driven based on the detected position information, An apparatus for manufacturing a semiconductor device, comprising: a controller for positioning the substrate and connecting a predetermined surface of the semiconductor element and a surface of the substrate.   The manufacturing apparatus according to claim 9, wherein the irradiation apparatus emits visible light as detection light.   The light receiving device receives the detection light that has passed through a predetermined region including a region provided with a first mark for detecting positional information of the semiconductor element on a circuit surface of the semiconductor element. The manufacturing apparatus as described.   The manufacturing method according to claim 9, wherein the light receiving device receives the detection light that has passed through a through hole that penetrates the circuit surface and the predetermined surface of the semiconductor element for detecting position information of the semiconductor element. apparatus.   The light receiving device is capable of receiving light generated from a second mark provided on the surface of the substrate in order to detect positional information of the substrate, and between the predetermined surface of the semiconductor element and the surface of the substrate. The manufacturing apparatus as described in any one of Claims 9-12 arrange | positioned.   The manufacturing apparatus according to claim 13, wherein the light receiving device receives one of detection light passing through the semiconductor element and light generated from the second mark and then receiving the other.   The manufacturing apparatus according to claim 13, wherein the light receiving device can receive the detection light that has passed through the semiconductor element and the light generated from the second mark substantially simultaneously. In a semiconductor device having a semiconductor element mounted on a substrate,
Provided in the semiconductor element, having an alignment mark for detecting position information of the semiconductor element,
The semiconductor device is a semiconductor device in which a predetermined region including a region provided with the alignment mark is thinner than other regions.   The semiconductor device according to claim 16, wherein the predetermined region is thin enough to allow visible light to pass therethrough. The semiconductor element has a circuit surface and a predetermined surface opposite to the circuit surface,
18. The semiconductor device according to claim 16, wherein a surface of the substrate is connected to a predetermined surface of the semiconductor element, and the alignment mark is provided on a circuit surface. In a semiconductor device having a semiconductor element mounted on a substrate,
A semiconductor device having a through hole provided in the semiconductor element and penetrating a predetermined surface connected to the surface of the substrate for detecting position information of the semiconductor element and a circuit surface opposite to the predetermined surface.

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