JP2006311342A - Crystal resonator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystal resonator having high reliability and a high working efficiency. <P>SOLUTION: In many crystal resonators formed on one wafer each comprising integrally a vibrating part of a crystal raw thin plate and a reinforcing part of a crystal raw thick plate surrounding the vibrating part and exerting AT-cut thickness shear vibration, a lead-out electrode pattern connected to main electrodes on the front and rear sides of each crystal resonator is characterized in to extend to one principal side of the crystal resonator through a slit part formed with at least a width of the lead-out electrode pattern at a side face of the crystal resonator, and the short side width of the slit is characterized in to be a width that is 1.8 time to 3 times a width of a dicing blade used to dice many of the crystal resonators formed on the one wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

          The present invention relates to a quartz crystal device that belongs to a quartz crystal device and performs AT-cut thickness-slip vibration used in a quartz oscillator mainly used in a transmission system apparatus in the communication field.

          In the case of an AT-cut thickness-slip vibration that has a shape in which the vibration part of the conventional quartz base plate thin plate and the reinforcement part of the quartz base plate thick plate surrounding it are integrated, unnecessary spurious vibrations In order to avoid the occurrence, it has been common to make the vibration surface as large as possible with respect to the electrode surface.

          On the other hand, the recent trend is centered on transmission systems in the communications field, etc., and there is a very rapid demand for miniaturization and low profile from the market, as well as weight reduction and price reduction. It is expected that the size of the quartz crystal resonator piece will be 1 mm or less in accordance with the downsizing flow of such mounted parts.

Japanese Patent No. 3221609

          The applicant has not found any prior art documents related to the present invention other than the prior art documents specified by the prior art document information described above by the time of filing of the present application.

          However, the thickness of the vibrating portion of the vibrator is a very thin thin plate having a thickness of about 10 μm when the main vibration frequency is 150 MHz. It is also susceptible to slight mechanical distortion of the part, and the mechanical distortion changes the thickness of the thin plate of the vibration part described above, resulting in the generation of many unnecessary spurious vibrations other than the main vibration. Result.

          In view of the need for such fine processing that is very susceptible to external influences, the crystal resonator having such a shape is formed by etching processing, and as described above, the vibrating portion of the quartz base plate thin plate In general, a large number of crystal resonators each having a shape including a reinforcing portion of a quartz base plate thick plate surrounding the periphery thereof are patterned on a single wafer.

          Each crystal resonator in which a large number of crystal resonators are patterned on a single wafer is divided into each resonator by a dicing blade, such as a scriber, and then a crystal resonator container. Is housed in. Conventionally, this crystal unit is accommodated in a crystal unit container using a conductive adhesive as shown in FIG. 3 on a support base placed on the internal insulating substrate of the crystal unit container. A method of supporting the vibrator in a cantilever state has been taken.

          However, when a large number of crystal resonators patterned on the wafer are divided into the respective resonators, with the conventional lead electrode pattern, the lead electrodes connected to the main electrodes on the front and back of each crystal resonator are dicing blades. There is a problem that the electrical continuity may not be ensured.

          In addition, along with the downsizing process of the crystal unit described above, it is expected that the size of the crystal unit will be 1 mm or less and the handling method of the crystal unit will become more difficult. In the pattern of the lead-out electrode of the vibrator, there is a problem that the possibility of damage or loss during processing of the crystal vibrator may increase.

          The present invention has been made on the basis of the technical background as described above. Accordingly, an object of the present invention is to provide a crystal resonator with high work efficiency and high reliability.

          In order to achieve the above object, the present invention provides a vibrating portion of a quartz base plate thin plate in which a large number of quartz vibrators are formed on a single wafer and a reinforcing portion of a quartz base plate thick plate surrounding the periphery thereof. In a crystal resonator that performs AT-cut thickness-slip vibration, the lead electrode pattern connected to the main electrodes on the front and back of the crystal resonator is formed on the side surface of the crystal resonator with at least a lead electrode pattern width. It is characterized by extending to one main surface of the crystal resonator through this portion.

          Further, the short side width of the slit is 1.8 to 3 times the width of a dicing blade used when dividing a large number of crystal resonators formed on a single wafer. To do.

          According to the crystal resonator of the present invention, a state in which a large number of crystal resonators are formed on a single wafer without reliably dividing the electrode patterns on the front and back surfaces of the crystal resonator. Therefore, it is possible to perform a large number of crystal electrode base electrode deposition processes all at once, so that the work efficiency of crystal resonator external processing is significantly improved and the crystal resonator is lost when it is further downsized. It is possible to manufacture a crystal resonator with higher reliability while suppressing generation.

          In addition, according to the crystal resonator of the present invention, since the slit width is sufficiently larger than the width of the dicing blade, when the crystal resonator is divided into each crystal resonator, the fine electrode pattern material is a chip. Therefore, it is possible to remarkably reduce the possibility that the fine electrode material particles described above adhere to the vibration surface of the crystal unit and impair the reliability of the crystal unit. .

          Further, according to the crystal resonator of the present invention, since a large number of crystal resonators can be handled simultaneously in a state where a large number of crystal resonators are formed on a single wafer, For the deposition of the base electrode, it is possible to eliminate the step of individually framing one by one. As a result, the production efficiency of the crystal unit can be remarkably increased and the manufacturing cost thereof can be reduced.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In addition, the same code | symbol in each figure shall show the same object.

          FIG. 1 is a schematic top view of a crystal resonator 2 according to the present invention as seen from above. That is, the lead electrode pattern 6 connected to the main electrodes 5 on the front and back sides of the crystal resonator 2 passes through the slit 9 formed at least with the lead electrode pattern width 8 on the side surface 7 of the crystal resonator. Connected to the surface. Further, the short side width 11 of the slit is 1.8 to 3 times the width of the dicing blade used when dividing a large number of crystal resonators 2 formed on one wafer 1. Therefore, in FIG. 1, the portions in the holes of the respective slits 9 are not actually visible from the upper surface, but the main electrodes on the front and back surfaces of the crystal unit 2 are extended over the side surfaces of the crystal units 2 of the respective slits. A lead electrode pattern 6 extending from 5 is formed. As described above, according to the crystal resonator 2 of the present invention, the slit 9 having a sufficiently large width with respect to the width of the dicing blade is provided when the crystal resonator 2 is divided. Therefore, there is no possibility that particles of fine electrode material, which are chips of the above, are generated, and thus the fine particles of electrode material adhere to the vibration surface 3 of the crystal resonator 2 and impair the reliability of the crystal resonator 2. There is an effect that there is no. Note that the front and back main electrodes 5 and the lead-out electrode pattern 6 on the crystal unit 2 are formed by vapor deposition or sputtering. Further, the lead electrode pattern 6 may be connected to one main surface of the crystal resonator 2 via the short side surface of the crystal resonator 2, and this case is also included in the technical scope of the present invention. Needless to say.

          FIG. 2 is a schematic top schematic view of the wafer 1 described above as seen from above, showing a large number of crystal resonators 2 of the present invention formed on a single wafer 1. According to the crystal resonator 2 of the present invention, a large number of crystal resonators 2 formed on a single wafer 1 have individual electrodes because the electrode patterns on the front and back surfaces are ensured to be conductive and extend to one main surface. Since the base electrode vapor deposition process of the crystal unit 2 can be performed collectively and simultaneously without splitting, the work efficiency of the external processing of the crystal unit 2 is remarkably improved and the size is further reduced. Occurrence of loss of the crystal unit 2 can be suppressed, and the crystal unit 2 with higher reliability can be manufactured. In addition, in the state where a large number of crystal resonators 2 are formed on a single wafer 1, the characteristics of each crystal resonator 2 by probing can be measured with high work efficiency.

          FIG. 3 shows a pattern in which the conventional crystal unit 2 is placed on a support base provided on the bottom insulating substrate inside the crystal unit 2 container in a cantilevered state using a conductive adhesive. 4 is a schematic top perspective view of the crystal resonator 2 as viewed from the short side direction. FIG. That is, it shows an embodiment in which a single wafer 1 on which a large number of crystal resonators 2 are formed is divided and then stored in a crystal resonator 2 container.

          FIG. 4 is a schematic top schematic view of the wafer 1 as viewed from the top direction, showing a state in which a large number of conventional crystal resonators 2 are formed on a single wafer 1. Conventionally, it has been necessary to divide the wafer 1 into individual crystal pieces and load them individually on a mask or the like to form the front and back main electrodes 5 by vapor deposition.

1 is a schematic top view of a crystal resonator according to the present invention as viewed from above. FIG. 3 is a schematic top view schematically showing a wafer as viewed from above, showing a state in which a large number of crystal resonators of the present invention are formed on a single wafer. A short crystal resonator showing a pattern in which a conventional crystal resonator is cantilevered using a conductive adhesive on a support base provided on a bottom insulating substrate inside the crystal resonator container. It is a schematic top perspective view seen from the side direction. It is the general | schematic upper surface schematic diagram which looked at a wafer from the upper surface direction, and shows a mode that many conventional crystal oscillators are formed on one wafer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer 2 Crystal oscillator 3 Crystal base plate thin plate vibration part 4 Crystal base plate thick plate reinforcement part 5 Front and back main electrode 6 Leading electrode pattern 7 Crystal vibrator side face 8 Leading electrode pattern width 9 Slit 10 One side of crystal oscillator Main surface 11 Short side width of slit

Claims (2)

The AT-cut thickness-slip vibration, in which a large number of crystal resonators are formed on a single wafer, and the vibration part of the crystal base plate thin plate and the reinforcement part of the crystal base plate thick plate surrounding it, are integrated. In the quartz crystal
A lead electrode pattern connected to the main electrodes on the front and back sides of the crystal resonator extends to one main surface of the crystal resonator through at least a slit portion formed with the lead electrode pattern width on the side surface of the crystal resonator. A crystal resonator characterized by that.           The short side width of the slit according to claim 1 is 1.8 to 3 times the width of a dicing blade used when dividing a plurality of the crystal resonators formed on one wafer. A crystal resonator characterized by being.

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