JP4441258B2 - Crystal oscillator - Google Patents

Crystal oscillator Download PDF

Info

Publication number
JP4441258B2
JP4441258B2 JP2003434131A JP2003434131A JP4441258B2 JP 4441258 B2 JP4441258 B2 JP 4441258B2 JP 2003434131 A JP2003434131 A JP 2003434131A JP 2003434131 A JP2003434131 A JP 2003434131A JP 4441258 B2 JP4441258 B2 JP 4441258B2
Authority
JP
Japan
Prior art keywords
crystal
crystal resonator
wafer
quartz
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003434131A
Other languages
Japanese (ja)
Other versions
JP2005192135A (en
Inventor
学 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Crystal Device Corp
Original Assignee
Kyocera Crystal Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Crystal Device Corp filed Critical Kyocera Crystal Device Corp
Priority to JP2003434131A priority Critical patent/JP4441258B2/en
Publication of JP2005192135A publication Critical patent/JP2005192135A/en
Application granted granted Critical
Publication of JP4441258B2 publication Critical patent/JP4441258B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Description

本発明は水晶デバイスに属し、主として通信分野の伝送系装置に使用される水晶発振器に用いられるATカットの基本波厚み滑り振動をする水晶振動子に関する。           The present invention relates to a quartz crystal device, and relates to a quartz crystal resonator that performs AT-cut fundamental wave thickness shear vibration used in a crystal oscillator mainly used in a transmission system apparatus in the communication field.

従来の水晶素板薄板の振動部とその周囲を囲う水晶素板厚板の補強部とが一体と成った形状をしたATカットの基本波厚み滑り振動をする水晶振動子においては、不要なスプリアス振動の発生の回避の為に電極面の大きさに対して振動面の大きさを出来得る限り大きくとる形状とすることが一般的であった。           In the case of a quartz crystal resonator that has an AT-cut fundamental-wave thickness-slip vibration in which the vibration part of the conventional quartz base plate thin plate and the reinforcement part of the quartz base plate thick plate surrounding it are integrated, unnecessary spurious In order to avoid the occurrence of vibrations, it has been common to make the shape of the vibration surface as large as possible relative to the size of the electrode surface.

一方、最近の傾向では通信分野の伝送系装置等を中核として、その搭載部品についての非常に急激な市場からの小型化や低背化、更に加えて軽量化や低価格化の要求があるのが実際である。           On the other hand, the recent trend is centered on transmission systems in the communications field, etc., and there is a very rapid demand for miniaturization and low profile from the market, as well as weight reduction and price reduction. Is real.

特許3221609号公報Japanese Patent No. 3221609

なお、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。 The applicant has not found any prior art documents related to the present invention other than the prior art documents specified by the prior art document information described above by the time of filing of the present application.

しかしながら、前述の振動子の振動部の厚みは、例えば主振動周波数が150MHzの場合ではその振動部分の厚みが10μm程度といったような非常に薄い薄板であり、その為に振動子の振動部の周囲部分の僅かな機械的な歪みの影響も受けやすく、その機械的な歪みは先の振動部の薄板の厚みを変化させて、その結果、主振動以外の多数の不要なスプリアス振動の発生を招く結果となる。           However, the thickness of the vibrating portion of the vibrator is a very thin thin plate having a thickness of about 10 μm when the main vibration frequency is 150 MHz, for example. It is also susceptible to slight mechanical distortion of the part, and the mechanical distortion changes the thickness of the thin plate of the previous vibration part, resulting in the generation of many unnecessary spurious vibrations other than the main vibration. Result.

こういった非常に外部の影響を受けやすい微細な加工を必要とすることを鑑みて、この様な形状の水晶振動子はエッチング加工によって形成され、上述したように水晶素板薄板の振動部とその周囲を囲う水晶素板厚板の補強部とから成る形状をしている水晶振動子が、多数個一枚のウェハー上にパターンニングされていることが一般的である。           In view of the need for such fine processing that is highly susceptible to external influences, a crystal resonator having such a shape is formed by etching, and as described above, In general, a large number of crystal resonators each having a shape composed of a reinforcing portion of a quartz base plate thick plate surrounding the periphery are patterned on a single wafer.

加えて、一枚のウェハー上に多数個の水晶振動子がパターンニングされている各々の水晶振動子の先述の非常に薄い薄板の振動部の周波数調整はウェットエッチングによることが多く、隣同士の水晶振動子の振動面に順次エッチャントを滴下して振動部の周波数調整する際、エッチングを行う薄板の振動部の振動面を成す凹部から、まだエッチングを行わない隣接する水晶振動子の振動部の振動面に、エッチャントが流入してしまうことを防止するために、図5のように、隣接する水晶振動子のあいだにエッチャント止めのスリットを設ける加工を図2に示されるように水晶振動子が多数個パターンニングされたウェハーに施すなどしているのが実際である。           In addition, the frequency adjustment of the vibration part of the above-described very thin thin plate of each crystal resonator in which a large number of crystal resonators are patterned on one wafer is often performed by wet etching. When adjusting the frequency of the vibrating part by sequentially dropping the etchant on the vibrating surface of the crystal unit, the concave part forming the vibrating surface of the vibrating unit of the thin plate to be etched, In order to prevent the etchant from flowing into the vibration surface, as shown in FIG. 5, a process for providing an etchant stop slit between adjacent crystal oscillators as shown in FIG. Actually, it is applied to a wafer with a large number of patterns.

一枚のウェハー上に多数個の水晶振動子がパターンニングされた各々の水晶振動子は、スクライバーなどにより、それぞれの振動子に個割りされて水晶振動子の容器に収容され、水晶振動子の水晶振動子容器への収容は、従来は水晶振動子の内部基板上に載置された支持台の上に図4のように導電性接着剤を用いて水晶振動子を片持ちの状態で支持したり、図5のように非導電性接着剤を用いて水晶振動子の一点支持と併せてワイヤーボンディングをする方法がとられていた。           Each crystal resonator in which a large number of crystal resonators are patterned on a single wafer is divided into each resonator by a scriber or the like and accommodated in a crystal resonator container. Conventionally, the quartz crystal container is supported in a cantilevered state using a conductive adhesive as shown in FIG. 4 on a support base placed on the internal substrate of the quartz crystal oscillator. Alternatively, as shown in FIG. 5, a method of wire bonding using a non-conductive adhesive together with one-point support of a crystal resonator has been adopted.

しかしながら、前述のエッチャント止めのスリットを設けたウェハー上にパターンニングされた多数個の水晶振動子をスクライバーなどにより、それぞれの振動子に個割りする際、図5のような従来の電極パターンでは個々の水晶振動子の電極の表裏をスクライバーなどで切断して、その導通を確保出来なくなるおそれがあるといった問題があった。           However, when a large number of crystal resonators patterned on a wafer provided with the above-mentioned etchant stop slits are individually divided by a scriber or the like, the conventional electrode pattern as shown in FIG. There is a problem in that there is a possibility that the conduction of the crystal resonator electrode may not be ensured by cutting the front and back surfaces of the crystal resonator with a scriber or the like.

また、図5のような従来の電極パターンでは、スクライバーの刃が先のウェハーを切断するブレードラインの線上に電極材料であり導通のあるパターン材があると、切削時にパターン材の切りくずである微細な電極材料の粒子を発生して水晶振動子の振動面に付着して、水晶振動子の信頼性を損なうおそれがあるといった問題があった。           Further, in the conventional electrode pattern as shown in FIG. 5, if there is a conductive pattern material that is an electrode material on the line of the blade line where the blade of the scriber cuts the previous wafer, the pattern material is chipped during cutting. There is a problem in that fine electrode material particles are generated and adhered to the vibration surface of the crystal unit, which may impair the reliability of the crystal unit.

本発明は、以上のような技術的背景のもとでなされたものであり、従がってその目的は、信頼性のより高い水晶振動子を提供することである。           The present invention has been made on the basis of the technical background as described above. Accordingly, an object of the present invention is to provide a crystal resonator with higher reliability.

上記の目的を達成するために、本発明は、一枚のウェハー上に多数個の水晶振動子が形成された、水晶素板薄板の振動部とその周囲を囲う水晶素板厚板の補強部とが一体に成ったATカットの基本波厚み滑り振動をする水晶振動子において、該ウェハー上の各々の水晶素板を囲うように、少なくとも該水晶素板薄板の振動部の長さに形成されたスリットの、該水晶素板主面の電極パターンがかかる該スリット側面に、該電極パターンが付けられていることを特徴とする。
In order to achieve the above object, the present invention provides a vibrating portion of a quartz base plate thin plate in which a large number of quartz vibrators are formed on a single wafer and a reinforcing portion of a quartz base plate thick plate surrounding the periphery thereof. In an AT-cut fundamental-wave thickness-shear vibration crystal united integrally with each other, it is formed at least as long as the vibration part of the crystal element thin plate so as to surround each crystal element element on the wafer. The electrode pattern is attached to the side surface of the slit where the electrode pattern on the main surface of the quartz base plate is applied.

本発明の水晶振動子によれば、水晶振動子の表裏の電極パターンが確実に導通を確保してより信頼性の高い水晶振動子を製造することが出来る。           According to the crystal resonator of the present invention, the electrode patterns on the front and back surfaces of the crystal resonator can reliably ensure conduction, and a more reliable crystal resonator can be manufactured.

また、本発明の水晶振動子によれば、それぞれの水晶振動子への個割りの際に、パターン材の切りくずである微細な電極材料の粒子を発生することが無く、従って先の微細な電極材料の粒子が水晶振動子の振動面に付着して水晶振動子の信頼性を損なうおそれが無いという効果を奏する。           Further, according to the crystal resonator of the present invention, when dividing into each crystal resonator, fine electrode material particles that are chips of the pattern material are not generated. There is an effect that there is no possibility that particles of the electrode material adhere to the vibration surface of the crystal unit and impair the reliability of the crystal unit.

また、本発明の水晶振動子によれば、水晶振動子の製造歩留まりを著しく高めて、その製造コストを改善することが出来る。           Further, according to the crystal resonator of the present invention, the manufacturing yield of the crystal resonator can be remarkably increased, and the manufacturing cost can be improved.

以下に図面を参照しながら本発明の実施の一形態について説明する。
なお、各図においての同一の符号は同じ対象を示すものとする。
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In addition, the same code | symbol in each figure shall show the same object.

図1は本発明の水晶振動子3を上面からみた概略の上面模式図である。本図においてそれぞれのスリット9の枠内に入り込み黒く塗りつぶされている部分は、実際には上面からは見えず、それぞれのスリットの水晶振動子3側の側面に付けられた電極パターン4である。それ以外の電極パターン4は本図のようにスクライブライン6を避けて、ウェハー5からの個割りの際にブレード(刃)での切削の際、切りくずが出ないようにパターンニングされている。このように本発明の水晶振動子3によれば、それぞれの水晶振動子3への個割りの際に、パターン材の切りくずである微細な電極材料の粒子を発生することが無く、従って先の微細な電極材料の粒子が水晶振動子3の振動面1に付着して水晶振動子3の信頼性を損なうおそれが無いという効果を奏する。なお、水晶振動子3上の電極パターン4は、蒸着やスパッタリングにより形成されるものである。           FIG. 1 is a schematic top view of a crystal resonator 3 according to the present invention as viewed from above. In this figure, the portion that enters the frame of each slit 9 and is painted black is actually an electrode pattern 4 that is not visible from the top surface and is attached to the side surface of each slit on the crystal resonator 3 side. The other electrode patterns 4 are patterned so as not to generate chips when cutting with a blade (blade) when dividing from the wafer 5, avoiding the scribe line 6 as shown in the figure. . As described above, according to the crystal resonator 3 of the present invention, fine electrode material particles, which are chips of the pattern material, are not generated when the crystal resonators 3 are individually divided. There is an effect that there is no possibility that the fine electrode material particles adhere to the vibration surface 1 of the crystal unit 3 and impair the reliability of the crystal unit 3. In addition, the electrode pattern 4 on the crystal unit 3 is formed by vapor deposition or sputtering.

図2は本発明の水晶振動子3が一枚のウェハー5上に多数個形成される様子を示す、先のウェハー5を上面からみた概略の上面模式図である。なお、本図の点線の円内は、拡大したウェハー5の概略の水晶振動子3の長辺方向の側面断面図である。           FIG. 2 is a schematic top plan view of the previous wafer 5 as seen from above, showing how many crystal resonators 3 of the present invention are formed on a single wafer 5. In addition, the inside of the circle of the dotted line of this figure is a side sectional view of the enlarged long side direction of the crystal resonator 3 of the enlarged wafer 5.

図3は図2のウェハー5を、ウェハー5上に形成されたそれぞれの水晶振動子3の短辺方向からみた概略の側面断面図である。本図からわかるように、隣接した水晶振動子3に順次エッチャントを滴下して薄板の振動部1の周波数調整する際に、スリット5はエッチャントの他の薄板の振動部1への流入を確実に抑制するものである。           FIG. 3 is a schematic side sectional view of the wafer 5 shown in FIG. 2 as viewed from the short side direction of each crystal resonator 3 formed on the wafer 5. As can be seen from this figure, when adjusting the frequency of the vibrating plate 1 of the thin plate by sequentially dropping the etchant on the adjacent crystal unit 3, the slit 5 ensures that the etchant flows into the vibrating plate 1 of the other thin plate. It is to suppress.

図4は従来の、導電性接着剤12を用いて水晶振動子3を片持ちの状態で支持台13のうえに載置する模様を示す、水晶振動子3の短辺方向からみた概略の上面斜視図である。多数個の水晶振動子3が形成されたウェハー5を個割りして、水晶振動子3の容器に収納する一形態を示すものである。           FIG. 4 is a schematic top view of the crystal resonator 3 viewed from the short side direction, showing a conventional pattern in which the crystal resonator 3 is placed on the support base 13 in a cantilevered state using the conductive adhesive 12. It is a perspective view. 1 shows an embodiment in which a wafer 5 on which a large number of crystal resonators 3 are formed is divided and stored in a container of the crystal resonator 3.

図5は従来の別の水晶振動子3を上面からみた概略の模式図である。本図は非導電性接着剤を使用して、本図には図示されていないが支持台13のうえに片持ちの状態で水晶振動子3を載置し、かつワイヤーボンディング14を用いて電極の出力を外部回路につなげる模様を示す、水晶振動子3の短辺方向からみた概略の上面斜視図である。           FIG. 5 is a schematic diagram of another conventional crystal resonator 3 as viewed from above. In this figure, a non-conductive adhesive is used, and although not shown in the figure, the crystal unit 3 is placed on the support base 13 in a cantilever state, and an electrode is formed by using the wire bonding 14 FIG. 6 is a schematic top perspective view seen from the short side direction of the crystal unit 3, showing a pattern in which the output of the crystal unit 3 is connected to an external circuit.

本発明の水晶振動子を上面からみた概略の上面模式図である。1 is a schematic top view of a crystal resonator according to the present invention as viewed from above. 本発明の水晶振動子が多数個一枚のウェハー上に形成される様子を示す、先のウェハーを上面からみた概略の上面模式図である。なお、本図の点線の円内は拡大したウェハーの概略の側面断面図である。FIG. 3 is a schematic top view of the previous wafer as seen from above, showing how a large number of crystal resonators of the present invention are formed on a single wafer. The dotted circle in this figure is a schematic side sectional view of an enlarged wafer. 図2のウェハーを、ウェハー上に形成されたそれぞれの水晶振動子の短辺方向からみた概略の側面断面図である。FIG. 3 is a schematic side cross-sectional view of the wafer of FIG. 2 as viewed from the short side direction of each crystal resonator formed on the wafer. 従来の、導電性接着剤を用いて水晶振動子を片持ちの状態で支持台のうえに載置する模様を示す、水晶振動子の短辺方向からみた概略の上面斜視図である。It is the general | schematic top perspective view seen from the short side direction of the crystal oscillator which shows the conventional pattern which mounts a crystal oscillator on a support stand in the cantilever state using a conductive adhesive. 従来の、水晶振動子の短辺方向からみた概略の上面斜視図である。本図は非導電性接着剤を使用して、支持台のうえに片持ちの状態で水晶振動子を載置し、かつワイヤーボンディングを用いて電極の出力を外部回路につなげる模様を示す、水晶振動子の短辺方向からみた概略の上面斜視図である。It is the general | schematic upper surface perspective view seen from the short side direction of the conventional crystal oscillator. This figure shows a pattern in which a non-conductive adhesive is used to place a crystal unit in a cantilevered state on a support base, and the electrode output is connected to an external circuit using wire bonding. It is a schematic top perspective view seen from the short side direction of a vibrator.

符号の説明Explanation of symbols

1 薄板の振動部
2 厚板の補強部
3 水晶振動子
4 電極パターン
5 ウェハー
6 スクライブライン
7 水晶素板
8 振動部の長さ
9 スリット
10 主面
11 スリット側面
12 導電性接着剤
13 支持台
14 ワイヤーボンディング
DESCRIPTION OF SYMBOLS 1 Thin plate vibration part 2 Thick plate reinforcement part 3 Crystal oscillator 4 Electrode pattern 5 Wafer 6 Scribe line 7 Crystal base plate 8 Length of vibration part 9 Slit 10 Main surface 11 Slit side surface 12 Conductive adhesive 13 Support stand 14 Wire bonding

Claims (1)

一枚のウェハー上に多数個の水晶振動子が形成された、水晶素板薄板の振動部とその周囲を囲う水晶素板厚板の補強部とが一体に成ったATカットの基本波厚み滑り振動をする水晶振動子において、

該ウェハー上の各々の水晶素板を囲うように、少なくとも該水晶素板薄板の振動部の長さに形成されたスリットの、該水晶素板主面の電極パターンがかかる該スリット側面に、該電極パターンが付けられていることを特徴とする水晶振動子。
An AT-cut fundamental wave thickness slide in which a large number of crystal resonators are formed on a single wafer, and the vibration part of the quartz base plate thin plate and the reinforcement part of the quartz base plate thick plate surrounding it are integrated. In a crystal resonator that vibrates,

The slit side surface of the slit formed in at least the length of the vibrating portion of the quartz plate thin plate so as to enclose each quartz plate on the wafer is on the side surface of the slit on which the electrode pattern of the quartz plate main surface is applied. A crystal resonator having an electrode pattern.
JP2003434131A 2003-12-26 2003-12-26 Crystal oscillator Expired - Fee Related JP4441258B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003434131A JP4441258B2 (en) 2003-12-26 2003-12-26 Crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003434131A JP4441258B2 (en) 2003-12-26 2003-12-26 Crystal oscillator

Publications (2)

Publication Number Publication Date
JP2005192135A JP2005192135A (en) 2005-07-14
JP4441258B2 true JP4441258B2 (en) 2010-03-31

Family

ID=34791284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003434131A Expired - Fee Related JP4441258B2 (en) 2003-12-26 2003-12-26 Crystal oscillator

Country Status (1)

Country Link
JP (1) JP4441258B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5637868B2 (en) * 2011-01-11 2014-12-10 日本電波工業株式会社 Piezoelectric device and method for manufacturing piezoelectric device

Also Published As

Publication number Publication date
JP2005192135A (en) 2005-07-14

Similar Documents

Publication Publication Date Title
JP4281348B2 (en) Piezoelectric vibrating piece, piezoelectric device using the piezoelectric vibrating piece, mobile phone device using the piezoelectric device, and electronic equipment using the piezoelectric device
CN1612472B (en) Piezoelectric resonator element, piezoelectric device, method of manufacturing the same, cellular phone device and electronic equipment
JP3995987B2 (en) Manufacturing method of crystal unit
JPH08242026A (en) Piezoelectric oscillator and piezoelectric oscillator device provided therewith and circuit device provided with same device
US20130033153A1 (en) Piezoelectric device and method for manufacturing the same
JP2011155628A (en) Vibrating reed, vibrator, oscillator, electronic device, and frequency adjustment method
JP2003258601A (en) Surface acoustic wave apparatus and communication device using it
US20130076210A1 (en) Piezoelectric vibration reed, piezoelectric vibrator, oscillator, electronic instrument, and radio timepiece
JP2008206000A (en) Piezoelectric vibration chip, piezoelectric device, and manufacturing method of the piezoelectric vibration chip
JP2002076827A (en) Vibration reed, vibrator, oscillator and portable telephone set
JP4441258B2 (en) Crystal oscillator
JP2007088691A (en) Piezoelectric vibration chip, piezoelectric device, and manufacturing method of them
US9052699B2 (en) Method of manufacturing piezoelectric vibration reed, piezoelectric vibration reed, piezoelectric vibrator, oscillator, electronic instrument, and radio time piece
JP4472381B2 (en) Manufacturing method of crystal unit
EP0468051A1 (en) Structure of ultra-thin sheet piezoresonator
JP3975927B2 (en) Piezoelectric vibrating piece, piezoelectric device using the piezoelectric vibrating piece, mobile phone device using the piezoelectric device, and electronic equipment using the piezoelectric device
JP2004146963A (en) Super-thin plate piezoelectric device and manufacturing method thereof
JP4641111B2 (en) Method for manufacturing piezoelectric device element
JP4549226B2 (en) Wafer with many crystal units formed
JP4020010B2 (en) Piezoelectric vibrating piece, piezoelectric device using the piezoelectric vibrating piece, mobile phone device using the piezoelectric device, and electronic equipment using the piezoelectric device
JP2006238207A (en) Crystal oscillating plate, and its manufacturing method
JPH08125486A (en) Piezoelectric vibrator
JPH09181556A (en) Piezoelectric vibrator
JP4049368B2 (en) Small high frequency vibrator
JP5278068B2 (en) Vibration piece device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091006

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091222

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100108

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130115

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4441258

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130115

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130115

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140115

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees