JP2006303463A5 - - Google Patents

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Publication number
JP2006303463A5
JP2006303463A5 JP2006075314A JP2006075314A JP2006303463A5 JP 2006303463 A5 JP2006303463 A5 JP 2006303463A5 JP 2006075314 A JP2006075314 A JP 2006075314A JP 2006075314 A JP2006075314 A JP 2006075314A JP 2006303463 A5 JP2006303463 A5 JP 2006303463A5
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JP
Japan
Prior art keywords
electrode
oxide
light
emitting device
electroluminescent layer
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JP2006075314A
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Japanese (ja)
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JP2006303463A (en
JP5072243B2 (en
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Priority to JP2006075314A priority Critical patent/JP5072243B2/en
Priority claimed from JP2006075314A external-priority patent/JP5072243B2/en
Publication of JP2006303463A publication Critical patent/JP2006303463A/en
Publication of JP2006303463A5 publication Critical patent/JP2006303463A5/ja
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Publication of JP5072243B2 publication Critical patent/JP5072243B2/en
Expired - Fee Related legal-status Critical Current
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Claims (9)

積層構造を有する第1の電極と、
前記第1の電極上に設けられた電界発光層と、
前記電界発光層上に設けられた第2の電極と、をそれぞれ有する赤色、緑色、及び青色を呈する発光素子を有し、
前記電界発光層は、前記第1の電極と接する側に金属酸化物を有する混在層を含み、
前記第1の電極は、前記金属酸化物を有する混在層と接する側に高融点金属材料を有し、
前記赤色、緑色、及び青色を呈する発光素子において、前記第1の電極の膜厚は同一であり、且つ前記金属酸化物を有する混在層の膜厚はそれぞれ異なっていることを特徴とする発光装置。
A first electrode having a laminated structure;
An electroluminescent layer provided on the first electrode;
A second electrode provided on the electroluminescent layer; and a light emitting element exhibiting red, green, and blue, respectively.
The electroluminescent layer includes a mixed layer having a metal oxide on the side in contact with the first electrode,
The first electrode has a refractory metal material on a side in contact with the mixed layer having the metal oxide,
In the light emitting element exhibiting red, green, and blue, the thickness of the first electrode is the same, and the thickness of the mixed layer including the metal oxide is different. .
絶縁基板上に形成された半導体膜と、
前記半導体膜中の不純物領域に接続された電極と、
前記電極に接続された、積層構造を有する第1の電極と、
前記第1の電極上に設けられた電界発光層と、
前記電界発光層上に設けられた第2の電極と、をそれぞれ有する赤色、緑色、及び青色を呈する発光素子を有し
前記電界発光層は、前記第1の電極と接する側に金属酸化物を有する混在層を含み、
前記第1の電極は前記金属酸化物を有する混在層と接する側に高融点金属材料を有し、
前記赤色、緑色、及び青色を呈する発光素子において、前記第1の電極の膜厚は同一であり、且つ前記金属酸化物を有する混在層の膜厚はそれぞれ異なっていることを特徴とする発光装置。
A semiconductor film formed on an insulating substrate;
An electrode connected to the impurity region in the semiconductor film;
A first electrode having a laminated structure connected to the electrode;
An electroluminescent layer provided on the first electrode;
A second electrode provided on the electroluminescent layer; and a light emitting element exhibiting red, green, and blue, respectively .
The electroluminescent layer includes a mixed layer having a metal oxide on the side in contact with the first electrode,
The first electrode have a high melting point metal material on the side in contact with the mixture layer having a metal oxide,
In the light emitting element exhibiting red, green, and blue, the thickness of the first electrode is the same, and the thickness of the mixed layer including the metal oxide is different. .
請求項において、
前記不純物領域はp型の不純物領域であることを特徴とする発光装置。
In claim 2 ,
The light-emitting device, wherein the impurity region is a p-type impurity region.
請求項1乃至請求項のいずれか一において、
前記金属酸化物は、バナジウム酸化物、モリブデン酸化物、ニオブ酸化物、レニウム酸化物、タングステン酸化物、ルテニウム酸化物、チタン酸化物、クロム酸化物、ジルコニウム酸化物、ハフニウム酸化物、及びタンタル酸化物のいずれかであることを特徴とする発光装置。
In any one of Claims 1 to 3 ,
The metal oxide includes vanadium oxide, molybdenum oxide, niobium oxide, rhenium oxide, tungsten oxide, ruthenium oxide, titanium oxide, chromium oxide, zirconium oxide, hafnium oxide, and tantalum oxide. A light-emitting device characterized by being any one of the above.
請求項1乃至請求項のいずれか一において、
前記第2の電極から前記電界発光層の光が射出されることを特徴とする発光装置。
In any one of Claims 1 thru | or 4 ,
A light-emitting device, wherein light from the electroluminescent layer is emitted from the second electrode.
請求項1乃至請求項のいずれか一において、
前記第1の電極は前記高融点金属材料と、反射性材料との積層構造を有することを特徴とする発光装置。
In any one of Claims 1 thru | or 5 ,
The first electrode has a laminated structure of the refractory metal material and a reflective material.
請求項1乃至請求項のいずれか一において、
前記高融点金属材料に窒化チタンを用いることを特徴とする発光装置。
In any one of Claims 1 thru | or 6 ,
A light-emitting device using titanium nitride as the refractory metal material.
請求項1乃至請求項のいずれか一において、
前記高融点金属材料にチタン、タングステン、モリブデン、又はこれらを有する化合物を用いることを特徴とする発光装置。
In any one of Claims 1 thru | or 6 ,
A light-emitting device using titanium, tungsten, molybdenum, or a compound including these as the refractory metal material.
請求項乃至請求項のいずれか一において、
前記反射性材料はアルミニウム、銀、アルミニウムを含む合金、又は銀を含む合金であることを特徴とする発光装置。
In any one of Claims 6 thru | or 8 ,
The light-emitting device, wherein the reflective material is aluminum, silver, an alloy containing aluminum, or an alloy containing silver.
JP2006075314A 2005-03-25 2006-03-17 Light emitting device Expired - Fee Related JP5072243B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006075314A JP5072243B2 (en) 2005-03-25 2006-03-17 Light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005088807 2005-03-25
JP2005088807 2005-03-25
JP2006075314A JP5072243B2 (en) 2005-03-25 2006-03-17 Light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011093899A Division JP2011181508A (en) 2005-03-25 2011-04-20 Light emitting device

Publications (3)

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JP2006303463A JP2006303463A (en) 2006-11-02
JP2006303463A5 true JP2006303463A5 (en) 2008-11-20
JP5072243B2 JP5072243B2 (en) 2012-11-14

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Family Applications (1)

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JP2006075314A Expired - Fee Related JP5072243B2 (en) 2005-03-25 2006-03-17 Light emitting device

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US8513678B2 (en) * 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US20080309225A1 (en) * 2007-05-18 2008-12-18 Masao Shimizu Organic electroluminescent display device
JP2010153365A (en) * 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd Light-emitting element, light-emitting device, electronic equipment, and illumination device
JP2010161185A (en) * 2009-01-08 2010-07-22 Ulvac Japan Ltd Organic el display device and method of manufacturing the same
WO2011083515A1 (en) * 2010-01-08 2011-07-14 パナソニック株式会社 Organic el panel, display device using same, and method for producing organic el panel
WO2012070085A1 (en) 2010-11-24 2012-05-31 パナソニック株式会社 Organic el panel, display device using same, and method for producing organic el panel
WO2012070087A1 (en) 2010-11-24 2012-05-31 パナソニック株式会社 Organic el panel, display device using same, and method for producing organic el panel
US8847217B2 (en) 2010-11-24 2014-09-30 Panasonic Corporation Organic EL panel, display device using same, and method for producing organic EL panel
JP5600752B2 (en) 2010-11-24 2014-10-01 パナソニック株式会社 Organic EL panel, display device using the same, and organic EL panel manufacturing method
KR101894898B1 (en) * 2011-02-11 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and electronic device using light-emitting device
US9012927B2 (en) * 2011-11-30 2015-04-21 Canon Kabushiki Kaisha Display device
JP5963458B2 (en) * 2012-01-31 2016-08-03 キヤノン株式会社 LIGHT EMITTING DEVICE, IMAGE FORMING DEVICE, AND IMAGING DEVICE
US10164202B2 (en) 2015-04-16 2018-12-25 Sharp Kabushiki Kaisha Organic electroluminescence device including an organic electroluminescence element above a contact hole
JP6907008B2 (en) * 2017-04-17 2021-07-21 キヤノン株式会社 Organic light emitting device, manufacturing method of organic light emitting device, and imaging device

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JP3488474B2 (en) * 1998-02-02 2004-01-19 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Anode modification for organic light-emitting diodes
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