JP2006299261A - 改善された応力性能を有するダイ取付接着剤 - Google Patents

改善された応力性能を有するダイ取付接着剤 Download PDF

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JP2006299261A
JP2006299261A JP2006112988A JP2006112988A JP2006299261A JP 2006299261 A JP2006299261 A JP 2006299261A JP 2006112988 A JP2006112988 A JP 2006112988A JP 2006112988 A JP2006112988 A JP 2006112988A JP 2006299261 A JP2006299261 A JP 2006299261A
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Prior art keywords
die attach
resin
vinyl
present
epoxy compound
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JP2006112988A
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Eunsook Chae
ユンスク・チャエ
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National Starch and Chemical Investment Holding Corp
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National Starch and Chemical Investment Holding Corp
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Publication of JP2006299261A publication Critical patent/JP2006299261A/ja
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Abstract

【課題】フリーラジカル重合によって硬化可能な樹脂、フリーラジカル硬化剤、及びビニル又はアリル不飽和基を有するエポキシ化合物又は樹脂を含み、改善された応力性能を有するダイ取付接着剤を提供する。
【解決手段】（ａ）フリーラジカル重合によって又はヒドロシレーションによって硬化可能な樹脂、（ｂ）ビニル又はアリル官能基を有するエポキシ化合物、（ｃ）樹脂（ａ）のための硬化剤及び（ｄ）充填剤を含むダイ取付接着剤組成物であって、エポキシ化合物用の硬化剤が存在しないことを特徴とする。
【選択図】 なし

Description

発明の詳細な説明
発明の分野
本発明は、フリーラジカル重合によって硬化可能な樹脂、フリーラジカル硬化剤、及びビニル又はアリル不飽和基を有するエポキシ化合物又は樹脂を含み、改善された応力性能を有するダイ取付接着剤（die attach adhesives）であって、該エポキシ化合物のための硬化剤が存在しない接着剤に関する。
発明の背景
接着剤組成物は、半導体パッケージの作製及び組立、例えば、集積回路チップのリードフレーム又は他の基板への接着、スタックトダイアセンブリ、回路パッケージ又はアセンブリのプリント配線板への接着などの様々な目的に使用される。これら用途では主に速く硬化し、高い接着強度を有することが求められており、このような要求は、従来、エポキシ樹脂により達成されている。しかし、エポキシ樹脂は、脆く、パッケージ内に高応力を生じさせるので、その結果、可撓性及び他の性質（例えば、疎水性）を向上させるために他の樹脂が評価され、採用されている。しかし、この代替樹脂はエポキシ樹脂によって与えられる強力な接着力を常に示すとは限らない。それゆえ、半導体パッケージの製造に使用される接着剤に求められる要求を全て満たすバランスのとれた性質を備えているダイ取付接着剤が求められている。
発明の概要
本発明は、米国特許第６，７５０，３０１号に開示された発明の改良であり、（ａ）フリーラジカル重合によって又はヒドロシレーションによって硬化可能な樹脂；（ｂ）ビニル又はアリル不飽和基を含むエポキシ化合物；（ｃ）当該樹脂のための硬化剤；及び（ｄ）場合によって、一以上の充填材；を含む接着剤組成物であって、該エポキシ樹脂用の硬化剤が存在しないことを特徴とする組成物である。本明細書及び特許請求の範囲において使用されるように、フリーラジカル重合又は硬化可能な化合物又は樹脂は炭素−炭素不飽和結合を含むものであり、ヒドロシレーションによって重合又は硬化可能な化合物又は樹脂はケイ素−ヒドリド基を含むものである。この組成物はまた、接着促進剤又はカップリング剤を含むこともできる。
本発明者はエポキシ化合物用の硬化剤を除去することによって、そのエポキシ用硬化剤を含む配合物と比較して、（反りによって測定されるような）応力性能に予想外の改善を与え、接着力も維持されるか又は改善されることを見出した。別の態様において、本発明は、本発明の接着剤で基板に接着された半導体ダイを有する半導体パッケージである。
発明の詳細な記述
超小型電子技術の用途に接着剤として使用されることができるフリーラジカル硬化性樹脂としては、例えば、マレイミド類（例えば、Ciba Specialty Chemicalsから入手できるもの）；ポリエーテル類（例えば、BASFから入手できるもの）；ポリエステル類（例えば、Uniqema又はBayerから入手できるもの）；ポリ（ブタジエン）類（例えば、Elf-Atochemから入手できるもの）；ポリウレタン類（例えば、Bayer又はBASFから入手できるもの）；アクリレート樹脂（例えば、Sartomer又はUCB Radcureから入手できるもの）などが挙げられる。ポリエーテル類、ポリエステル類、及びポリウレタン類は、好ましくは末端に不飽和基を含むが、ポリマー鎖中にも不飽和基を含んでもよい。
ヒドロシレーションによって硬化されるシロキサン類及びポリシロキサン類は、線状又は環状のポリマーであってもよく、１分子当たり少なくとも２つのケイ素−ヒドリド官能基を有する。例えば、Gelestから商業的に入手できる化合物が挙げられる。
特定の樹脂が作業の専門家によって選ばれて、レオロジー的性質、親水性又は疎水性、靭性、強度、可撓性などの最終配合物における特定の材料の性質を与える。その樹脂は、１０〜８０重量％の範囲で接着剤組成物に存在する。
エポキシ化合物としては、アリル又はビニル官能基を有するエポキシ化合物のいずれも採用することができる。例として、２，６−ジグリシジルフェニルアリルエーテル、リモネンジオキシド、グリシジルビニルベンジルエーテル、グリシジルビニルエーテルなどが挙げられる。エポキシ化合物は、０．１〜３０重量％の範囲で接着剤組成物に存在する。
フリーラジカル開始剤としては、熱−又は光−開始剤を挙げることができ、０．１〜１０重量％、好ましくは０．１〜３．０重量％の量で接着剤組成物に存在する。好ましい熱開始剤としては、例えば、ジ−（４−ｔ−ブチルシクロヘキシル）パーオキシジカーボネート、ブチルパーオクトエート類、ジクミルペーオキサイドなどのパーオキサイド類；２，２’−アゾビス（２−メチル−プロパンニトリル）、２，２’−アゾビス（２−メチル−ブタンニトリル）などのアゾ化合物などが挙げられる。好ましい一連の光開始剤としては、Ciba Speciality ChemicalsによりIrgacureの商標で販売されているものがある。幾つかの配合物において、光硬化及び熱硬化の両方を行うことが好ましい。例えば、そのような硬化プロセスは、光照射によって開始されることができ、その後の加工工程において熱を加えることによって硬化を完了することができる。
一般に、これら組成物は７０℃〜２５０℃の温度範囲内で硬化し、硬化は１０秒〜３時間の範囲内で行う。各配合物の時間及び温度の硬化プロファイルはその配合物の構成成分によって変化するが、硬化プロファイルのパラメーターは過度の実験を行うことなく当業者によって調整されることができる。
いくつかの組成物において、有機又は無機の充填材を添加することが望ましい。好適な導電性充填材は、カーボンブラック、グラファイト、金、銀、銅、白金、パラジウム、ニッケル、アルミニウム、炭化ケイ素、窒化ホウ素、及びアルミナである。好適な非導電性充填材は、バーミキュライト、マイカ、ウォラストナイト、炭酸カルシウム、チタニア、砂、ガラス、フューズドシリカ、フュームドシリカ、硫酸バリウム、並びに、テトラフルオロエチレン、トリフルオロエチレン、ビニリデンフルオライド、ビニルフルオライド、ビニリデンクロライド、ビニルクロライドなどから誘導されるハロゲン化エチレンポリマーの粒子である。充填材は、存在させる場合には、組成物の重量基準で２０％〜９０％の量で存在させる。
望ましくは、接着促進剤又はカップリング剤、例えば、シラン類、シリケートエステル類、金属アクリレート類又は金属メタクリレート類、チタネート類、キレート化リガンド（例えば、フォスフィン、メルカプタン、アセトアセテートなど）を含む化合物類などを添加することもできる。これら材料は、存在させる場合には、組成物の重量基準で１０％以下の量、好ましくは０．１％〜３．０％の量で存在させる。
本発明をさらに以下の実施例により説明するが、これら実施例は本発明を限定するものではない。
実施例
これら実施例に関して半導体ダイの基板に対する接着強度はダイせん断強度（Kg force単位）として測定された。試験は、２層ＢＴプリント回路板に取り付けられた３×３ｍｍシリコンダイの未封入の（unencapsulated）アセンブリを使用して行った。この未封入のアセンブリは、オーブン中、室温から１７５℃までの３０分間の勾配で、その後１７５℃で１５分間保持して硬化された。その後、そのアセンブリは２つのグループに分けられた。第１のグループは、硬化直後にダイせん断強度を試験した（ポストキュア）。第２のグループは１７５℃で４時間ポストモールドベーキング（post-mold baking）の模擬条件に曝露され、その後、室温に戻してダイせん断強度を試験した（ポストモールドベーク）。ポストキュアのグループ及びポストモールドベークのグループの両方がさらに２つのサブグループに分けられた。第１のサブグループは室温でのダイせん断強度を試験し、第２のサブグループは２６０℃でのダイせん断強度を試験した。全てのアセンブリが、ダイを基板に接着する接着剤の破壊の結合力のあるモード（cohesive mode of failure）を呈した。
パッケージ内に存在する応力のレベルを未封入アセンブリにおけるダイの反りによって表示する。高い反りの値はダイ取付アセンブリにおける高い応力を示す。これらの実施例に関して２つのタイプのアセンブリが試験された。第１のタイプにおいて、１２．７×１２．７×０．３８ｍｍシリコンダイが０．２ｍｍ厚の銀メッキされた銅のリードフレームに取り付けられた。第２のタイプにおいて、７×８×０．０７６ｍｍシリコンダイが０．２ｍｍ厚のビスマレイミドトリアジン（ＢＴ）基板に取り付けられた。アセンブリは、オーブン中、室温から１７５℃までの３０分間の勾配で、その後１７５℃で１５分間保持して硬化された。これらのアセンブリはその後室温に戻され、ダイの反りが表面粗さ測定装置を使用して測定された。
以下の実施例においてアリル又はビニル官能基を有するエポキシ用の硬化剤を有する配合物とそれを有しない配合物が、上述したプロトコルを使用して、室温及びホットドライダイせん断強度（kg of force単位で測定した）及び反り（μｍ単位で測定した）に関して試験された。接着剤の組成及び性能の試験データは以下の表に示されており、それら表は、アリル又はビニル官能基を有するエポキシ用の硬化剤を有しない配合物が、同等かより高いダイせん断強度及びより低い反りを有していたことを示している。それゆえ、そのデータは、アリル又はビニル不飽和基を有するエポキシ化合物用の硬化剤を有しない配合物が接着剤の性能を予想外に向上させることを示している。組成は重量％で報告されている。以下の表中、「シリカ１」及び「シリカ２」は、それぞれ、株式会社アドマテックス製のＳＥ１０５０及びＳＥ６１００を示す。
Figure 2006299261
Figure 2006299261
Figure 2006299261
Figure 2006299261
Figure 2006299261
Figure 2006299261

Claims (4)

  1. （ａ）１０重量％〜８０重量％の量で存在し、フリーラジカル重合によって又はヒドロシレーションによって硬化可能な樹脂；
    （ｂ）０．１重量％〜３０重量％の量で存在し、ビニル又はアリル官能基を有するエポキシ化合物；
    （ｃ）０．１重量％〜１０重量％の量で存在する、樹脂（ａ）のための硬化剤；及び
    （ｄ）場合によって、２０重量％〜９０重量％の量で存在する、充填材；
    を含むダイ取付接着剤組成物であって、該エポキシ化合物用の硬化剤が存在しないことを特徴とする組成物。
  2. 樹脂がマレイミド類、ポリエーテル類、ポリエステル類、ポリ（ブタジエン）類、ポリウレタン類、アクリレート類、シロキサン類、及びポリシロキサン類からなる群から選ばれる、請求項１のダイ取付接着剤組成物。
  3. エポキシ化合物が２，６−ジグリシジルフェニルアリルエーテル、リモネンジオキシド、グリシジルビニルベンジルエーテル、及びグリシジルビニルエーテルからなる群から選ばれる、請求項１のダイ取付接着剤組成物。
  4. 充填材が存在し、充填材がカーボンブラック、グラファイト、金、銀、銅、白金、パラジウム、ニッケル、アルミニウム、炭化ケイ素、窒化ホウ素、ダイアモンド、アルミナ、バーミキュライト、マイカ、ウォラストナイト、炭酸カルシウム、チタニア、砂、ガラス、フューズドシリカ、フュームドシリカ、硫酸バリウム、並びに、テトラフルオロエチレン、トリフルオロエチレン、ビニリデンフルオライド、ビニルフルオライド、ビニリデンクロライド及びビニルクロライドの内の少なくとも１つから誘導されるポリマーからなる群から選ばれる、請求項１のダイ取付接着剤組成物。
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396869B2 (en) * 2002-12-04 2008-07-08 Denovus Llc Metallic acrylate curing agents and usage thereof in intermediate compositions
BR0316860A (pt) * 2002-12-04 2005-10-25 Denovus Llc Composição curável, e composição curável por calor
US7528189B2 (en) * 2002-12-04 2009-05-05 Blue Goo, Llc Metal-acrylate curing agents
CN101595194B (zh) * 2007-02-06 2012-02-08 日本化成株式会社 粘合性树脂组合物和粘合方法
JP5008999B2 (ja) * 2007-02-06 2012-08-22 リンテック株式会社 ダイシングテープおよび半導体装置の製造方法
US20080292801A1 (en) * 2007-05-23 2008-11-27 National Starch And Chemical Investment Holding Corporation Corrosion-Preventive Adhesive Compositions
US9469790B2 (en) * 2009-09-29 2016-10-18 The Boeing Company Adhesive compositions comprising electrically insulating-coated carbon-based particles and methods for their use and preparation
CN102060550B (zh) * 2010-10-26 2012-11-21 中钢集团吉林炭素股份有限公司 一种树脂炭素胶泥
KR101021075B1 (ko) * 2010-11-05 2011-03-11 주식회사 에코인프라홀딩스 몰탈 조성물 및 이를 이용하여 제조된 몰탈
TWI651387B (zh) * 2013-09-30 2019-02-21 漢高智慧財產控股公司 用於大型晶粒半導體封裝之導電黏晶薄膜及供其製備之組合物
JP6610510B2 (ja) * 2015-11-26 2019-11-27 信越化学工業株式会社 ウエハ積層体及びその製造方法
CN110054998B (zh) * 2019-02-11 2021-08-13 斯迪克新型材料（江苏）有限公司 石墨烯定向导热双面胶带
TW202219214A (zh) 2020-08-27 2022-05-16 德商漢高股份有限及兩合公司 導電性單組分型(1k)環氧樹脂調配物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326635A (ja) * 1994-05-31 1995-12-12 Hitachi Chem Co Ltd 接着剤および半導体装置
JP2000104035A (ja) * 1998-09-28 2000-04-11 Hitachi Chem Co Ltd 樹脂ぺースト組成物及びこれを用いた半導体装置
JP2001217262A (ja) * 2000-01-31 2001-08-10 Sumitomo Bakelite Co Ltd ダイアタッチペースト及び半導体装置
JP2002060715A (ja) * 2000-07-07 2002-02-26 Natl Starch & Chem Investment Holding Corp アリル基またはビニル基を有するエポキシ樹脂を含有するダイ結合性接着剤
JP2003138226A (ja) * 2001-11-05 2003-05-14 Sumitomo Bakelite Co Ltd ダイアタッチペースト及び半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5209983A (en) * 1992-06-26 1993-05-11 E. I. Du Pont De Nemours And Company Adhesives for laminating vinyl to various substrates
EP0645735A2 (en) * 1993-08-30 1995-03-29 Konica Corporation Id card
US5863970A (en) * 1995-12-06 1999-01-26 Polyset Company, Inc. Epoxy resin composition with cycloaliphatic epoxy-functional siloxane
JPH1060138A (ja) * 1996-08-27 1998-03-03 Matsushita Electric Works Ltd 配線基板材料
US6858469B1 (en) * 1997-08-06 2005-02-22 Micron Technology, Inc. Method and apparatus for epoxy loc die attachment
US6583198B2 (en) * 1997-11-28 2003-06-24 Hitachi Chemical Company, Ltd. Photo curable resin composition and photosensitive element
EP1042411B1 (en) * 1997-12-17 2006-08-09 PPG Industries Ohio, Inc. Flexible phosphatized polyester-urethane primers and improved coating systems including the same
JP4296588B2 (ja) * 1999-04-22 2009-07-15 味の素株式会社 熱硬化性樹脂組成物およびこれを用いたフレキシブル回路オーバーコート剤
EP1156068B1 (en) * 2000-05-18 2005-03-16 National Starch and Chemical Investment Holding Corporation Die attach adhesives with vinyl ether and carbamate or urea functionality

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326635A (ja) * 1994-05-31 1995-12-12 Hitachi Chem Co Ltd 接着剤および半導体装置
JP2000104035A (ja) * 1998-09-28 2000-04-11 Hitachi Chem Co Ltd 樹脂ぺースト組成物及びこれを用いた半導体装置
JP2001217262A (ja) * 2000-01-31 2001-08-10 Sumitomo Bakelite Co Ltd ダイアタッチペースト及び半導体装置
JP2002060715A (ja) * 2000-07-07 2002-02-26 Natl Starch & Chem Investment Holding Corp アリル基またはビニル基を有するエポキシ樹脂を含有するダイ結合性接着剤
JP2003138226A (ja) * 2001-11-05 2003-05-14 Sumitomo Bakelite Co Ltd ダイアタッチペースト及び半導体装置

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