JP2006297524A - Guide ring for polishing rectangular substrate, polishing head, and method for polishing rectangular substrate - Google Patents

Guide ring for polishing rectangular substrate, polishing head, and method for polishing rectangular substrate Download PDF

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JP2006297524A
JP2006297524A JP2005121087A JP2005121087A JP2006297524A JP 2006297524 A JP2006297524 A JP 2006297524A JP 2005121087 A JP2005121087 A JP 2005121087A JP 2005121087 A JP2005121087 A JP 2005121087A JP 2006297524 A JP2006297524 A JP 2006297524A
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substrate
polishing
guide ring
square
photomask
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JP4616062B2 (en
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Tsuneo Numanami
恒夫 沼波
Masayuki Nakatsu
正幸 中津
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Shin Etsu Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a guide ring capable of finishing a rectangular substrate to a rectangular substrate easily and surely having high flatness when polishing the rectangular substrate such as a photomask substrate. <P>SOLUTION: When polishing the rectangular substrate 6, while pressing the rectangular substrate 6 against polishing cloth, this guide ring 1 prevents the excessive polishing of the surrounding part of the substrate 6 by pressing the polishing cloth around the substrate 6. In the guide ring 1, a storing part 2 for storing the substrate 6 is provided, and a cut-out part 4 communicated with the outside of the guide ring 1 is formed in a part around the storing part 2 on a surface 3 in contact with the polishing cloth. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、フォトマスク基板、液晶基板等の角型基板を研磨する際、基板の周辺部の過剰な研磨を防ぐために使用されるガイドリングに関する。   The present invention relates to a guide ring used for preventing excessive polishing of a peripheral portion of a substrate when a square substrate such as a photomask substrate or a liquid crystal substrate is polished.

近年、DRAM等の集積回路の高集積化に伴い、回路設計のパターンルールの微細化の要求が年々高くなってきている。それに伴い、光リソグラフィー工程に使用する光源の使用波長は、i線、KrFエキシマレーザー、ArFエキシマレーザーと、より短波長のものを使用する方向にシフトしてきている。   In recent years, with the high integration of integrated circuits such as DRAM, the demand for miniaturization of pattern rules for circuit design has been increasing year by year. Along with this, the wavelength used for the light source used in the photolithography process has shifted to the direction of using i-line, KrF excimer laser, ArF excimer laser, and shorter wavelengths.

露光波長の短波長化は、限界解像度が向上する反面、焦点深度が浅くなるため、焦点深度を浅くしてしまう他の要因を除去することが重要な課題となってきている。リソグラフィー工程で使用するフォトマスクにおける基板の平坦度が低いと、マスクパターンとレンズとの距離がマスクパターンの位置により異なってしまうことになり、結果として焦点深度を浅くしてしまうことになる。そこでフォトマスクの材料となるフォトマスク基板においては、より高い平坦度が求められるようになってきており、例えば、152mm×152mmのフォトマスクにおいて、平坦度が0.5μm以下、更には0.3μm以下が望まれるようになってきている。   While shortening the exposure wavelength improves the critical resolution, the depth of focus becomes shallower, so it has become an important issue to remove other factors that make the depth of focus shallower. If the flatness of the substrate in the photomask used in the lithography process is low, the distance between the mask pattern and the lens varies depending on the position of the mask pattern, resulting in a shallow depth of focus. Therefore, higher flatness has been required for a photomask substrate as a photomask material. For example, in a 152 mm × 152 mm photomask, the flatness is 0.5 μm or less, and further 0.3 μm. The following are becoming desirable:

フォトマスク基板には、主に合成石英ガラス基板が使用されている。このようなフォトマスク基板を製造する場合、通常、原料となるガラスインゴットを形成した後、熱溶融させて角型に成形し、これをスライスして基板状にする。そして、粗研磨から精密な研磨へと精度をあげるため数回の研磨を行うことで平坦なフォトマスク基板を得ることができる。
このようなフォトマスク基板の製造において基板の研磨を行う場合、複数枚の基板を両面研磨装置にて研磨する方法がある。複数枚の基板の両面を同時に研磨すれば、量産の点で有利である。また、主に使用される透過型マスクでは、露光光を十分透過させるために、フォトマスク基板の両面にスクラッチ等の欠陥のないことが要求されており、両面研磨はスクラッチ対策にも有効である。
As the photomask substrate, a synthetic quartz glass substrate is mainly used. When manufacturing such a photomask substrate, normally, after forming a glass ingot as a raw material, it is melted by heat and formed into a square shape, which is sliced into a substrate shape. A flat photomask substrate can be obtained by performing polishing several times in order to increase the accuracy from rough polishing to precise polishing.
When polishing a substrate in manufacturing such a photomask substrate, there is a method of polishing a plurality of substrates with a double-side polishing apparatus. Polishing both surfaces of a plurality of substrates simultaneously is advantageous in terms of mass production. In addition, the transmissive mask mainly used is required to be free from defects such as scratches on both sides of the photomask substrate in order to sufficiently transmit the exposure light, and double-side polishing is also effective as a countermeasure against scratches. .

一般的な両面研磨装置では、マスク基板の対称性が崩れるのを抑制すべく、マスク基板が研磨定盤上を自転しつつ公転しながら研磨されるように設計されている。しかし、基板の定盤に対する相対速度は回転中心から最も遠い基板の角部で最も速く、中央部で最も遅くなるため、基板角部において過剰な研磨が生じやすい。そこで、マスク基板の対称性を崩さず、かつ、基板中央部と角部における研磨の度合いを均一にするには研磨条件を工夫する必要がある。
例えば、粒径の異なる研磨剤を混合して研磨を行うことで平坦度の高い基板に仕上げる方法が提案されている(特許文献1参照)。また、最初に両面研磨装置により基板の中央部が早く研磨される条件で凹型の基板を作った後、片面研磨装置で周辺部がより早く研磨される条件で研磨を行なうことで平坦度の高い基板を得る方法が提案されている(特許文献2参照)。
A general double-side polishing apparatus is designed so that the mask substrate is polished while revolving while rotating on the polishing surface plate in order to prevent the symmetry of the mask substrate from being lost. However, since the relative speed of the substrate with respect to the surface plate is fastest at the corner of the substrate farthest from the center of rotation and slowest at the center, excessive polishing tends to occur at the corner of the substrate. Therefore, it is necessary to devise polishing conditions in order to maintain the symmetry of the mask substrate and to make the degree of polishing uniform at the center and corners of the substrate.
For example, a method of finishing a substrate with high flatness by mixing abrasives having different particle sizes and performing polishing has been proposed (see Patent Document 1). Also, after making a concave substrate under the condition that the central part of the substrate is polished quickly by the double-side polishing apparatus, the flatness is high by polishing under the condition that the peripheral part is polished faster by the single-side polishing apparatus. A method for obtaining a substrate has been proposed (see Patent Document 2).

片面研磨装置は研磨布と基板の間に働く圧力をより均一に制御することができるため、特に仕上げの研磨ではそれを用いるのが一般的である。図7は、一般的な片面研磨装置21の構成を概略的に示している。フォトマスク基板27を研磨ヘッド26で吸着保持し、研磨布25が貼り付けられた定盤24と研磨ヘッド26をそれぞれ所定の方向に回転させる。研磨布25に対し、研磨剤供給ノズル23から研磨剤22を供給するとともに基板27を押圧することにより研磨が行われる。
しかし、フォトマスク基板に対してより高い平坦度が要求される場合、片面研磨装置を用いて研磨を行っても、面全体にわたって平坦度が高い基板を得ることは極めて困難であり、特に角部が過研磨されるという問題が起こりやすい。
Since the single-side polishing apparatus can more uniformly control the pressure acting between the polishing cloth and the substrate, it is generally used particularly in finishing polishing. FIG. 7 schematically shows a configuration of a general single-side polishing apparatus 21. The photomask substrate 27 is sucked and held by the polishing head 26, and the surface plate 24 and the polishing head 26 to which the polishing cloth 25 is attached are rotated in predetermined directions. Polishing is performed by supplying the polishing agent 22 from the polishing agent supply nozzle 23 to the polishing cloth 25 and pressing the substrate 27.
However, when higher flatness is required for the photomask substrate, it is extremely difficult to obtain a substrate having high flatness over the entire surface even if polishing is performed using a single-side polishing apparatus. The problem of overpolishing is likely to occur.

そこで、上記のような片面研磨装置21を用いてフォトマスク基板の研磨を行う場合、図8に示したようなガイドリング30と呼ばれる環状の治具を用いて研磨を行う方法がある。研磨ヘッドに設けたガイドリング30内にフォトマスク基板27を収容した状態で保持し、研磨布に対して所定の圧力で押圧する。ガイドリング30により基板27の周囲の研磨布が押圧されることで、基板27の周辺部の過剰な研磨を抑制する効果が得られる。   Therefore, when the photomask substrate is polished using the single-side polishing apparatus 21 as described above, there is a method of polishing using an annular jig called a guide ring 30 as shown in FIG. The photomask substrate 27 is held in a guide ring 30 provided in the polishing head and pressed against the polishing cloth with a predetermined pressure. By pressing the polishing cloth around the substrate 27 by the guide ring 30, an effect of suppressing excessive polishing of the peripheral portion of the substrate 27 can be obtained.

しかし、ガイドリング30を用いてフォトマスク基板27の研磨を行っても、基板27の角部は回転中心からの距離が最も遠いため、研磨布との相対速度が大きく、また、よりフレッシュな研磨剤の供給を受け易いため、角部において過研磨が生じ易い。
また、対象性が崩れた形のフォトマスク基板から良好な平坦度を持つ基板を得ようとする場合、図8のような一般的なガイドリング30を用いても平坦度を修正する効果が得られないという問題がある。
However, even when the photomask substrate 27 is polished using the guide ring 30, the corner portion of the substrate 27 is farthest from the center of rotation, so that the relative speed with the polishing cloth is high and the polishing is more fresh. Since the agent is easily supplied, over-polishing is likely to occur at the corners.
In addition, when trying to obtain a substrate having good flatness from a photomask substrate having a distorted target, the effect of correcting the flatness can be obtained even by using a general guide ring 30 as shown in FIG. There is a problem that can not be.

一方、ガイドリングをいくつかの部分に分割し、各部分の押圧を独立して制御する方法が提案されている(特許文献3、4参照)。例えば、図9に示したように8分割したガイドリング40において、基板の角部に対応する段片41,43,45,47では、基板の辺の部分に対応する段片42,44,46,48よりも押圧を強く設定して研磨を行う。このようにガイドリング40の各段片41〜48の押圧を個々に制御して研磨を行うことで、基板の辺の部分と角部との研磨速度の差を小さくすることが可能となるとしている。   On the other hand, a method of dividing the guide ring into several parts and independently controlling the pressing of each part has been proposed (see Patent Documents 3 and 4). For example, in the guide ring 40 divided into eight as shown in FIG. 9, the step pieces 41, 43, 45, 47 corresponding to the corners of the substrate have step pieces 42, 44, 46 corresponding to the side portions of the substrate. , 48 is set to a pressure stronger than that for polishing. In this way, it is possible to reduce the difference in polishing rate between the side portion and the corner portion of the substrate by performing the polishing by individually controlling the pressing of the step pieces 41 to 48 of the guide ring 40. Yes.

また、高い平坦度を有するマスク基板に仕上げる手段として、基板に対し、複数の加圧体により個々に独立して圧力制御する方法も提案されている(特許文献5参照)。
しかし、これらの方法による制御は技術的に非常に難しく、これらの方法により基板の研磨を行っても必ずしも高い平坦度が達成されない場合があった。
Further, as a means for finishing a mask substrate having high flatness, a method has been proposed in which pressure control is independently performed on a substrate by a plurality of pressure bodies (see Patent Document 5).
However, control by these methods is technically very difficult, and high flatness may not always be achieved even when the substrate is polished by these methods.

特開2004−314294号公報JP 2004-314294 A 特開2005−43838号公報JP 2005-43838 A 特開2003−48148号公報JP 2003-48148 A 特開2003−51472号公報JP 2003-51472 A 特開2004−29735号公報Japanese Patent Laid-Open No. 2004-29735

上記問題に鑑み、本発明は、フォトマスク基板等の角型基板を研磨する際、容易にかつ確実に高い平坦度を有する角型基板に仕上げることができるガイドリングを提供することを主な目的とする。   In view of the above problems, the present invention mainly provides a guide ring that can be easily and reliably finished into a square substrate having high flatness when polishing a square substrate such as a photomask substrate. And

上記目的を達成するため、本発明によれば、角型基板を研磨布に対して押圧しながら研磨する際に、前記基板の周囲で前記研磨布を押圧することにより基板の周辺部の過剰な研磨を防ぐためのガイドリングであって、前記基板を収容する収容部を有し、少なくとも前記研磨布と接する側の面において、前記収容部の周辺の一部に該ガイドリングの外部に通じる切り欠き部が形成されていることを特徴とする角型基板研磨用ガイドリングが提供される(請求項1)。   In order to achieve the above object, according to the present invention, when polishing while pressing a square substrate against a polishing cloth, the polishing cloth is pressed around the substrate so that the peripheral portion of the substrate is excessive. A guide ring for preventing polishing, which has a housing portion for housing the substrate, and at least a part of the periphery of the housing portion that leads to the outside of the guide ring on a surface in contact with the polishing cloth A square substrate polishing guide ring characterized in that a notch is formed is provided (claim 1).

このような角型基板研磨用ガイドリングであれば、収容部に収容された角型基板の周辺部のうち切り欠き部に面する部分は、切り欠き部を通じてガイドリングの外側から相対的に多くの研磨剤が供給されるとともに研磨布による弾性力を強く受けるので、研磨が促進され、研磨効率が向上することになる。従って、このようなガイドリングであれば、複雑な押圧機構を持たない場合にも選択的な研磨が可能となり、基板の角部と辺の部分を同程度に研磨したり、対称性が崩れた基板の平坦度を修正することができ、容易にかつ確実に高い平坦度及び対称性を有する角型基板に仕上げることができる。   In such a square substrate polishing guide ring, the portion facing the notch in the peripheral part of the square substrate accommodated in the accommodating portion is relatively many from the outside of the guide ring through the notch. The polishing agent is supplied and the elastic force of the polishing cloth is strongly received, so that the polishing is promoted and the polishing efficiency is improved. Therefore, with such a guide ring, selective polishing is possible even without a complicated pressing mechanism, and the corners and sides of the substrate are polished to the same extent or the symmetry is lost. The flatness of the substrate can be corrected, and a square substrate having high flatness and symmetry can be easily and reliably finished.

前記収容部が、四角形状の角型基板を収容するものとすることができる(請求項2)。
高い平坦度が要求されるフォトマスク基板は一般的に四角形であるため、上記のようなガイドリングを好適に使用することができる。
The housing portion may house a square prismatic substrate (claim 2).
Since a photomask substrate requiring high flatness is generally rectangular, the guide ring as described above can be preferably used.

前記切り欠き部が、前記収容部に収容される角型基板の少なくとも1つの辺に対応する位置に(請求項3)、好ましくは、各辺に対応する位置に形成されている角型基板用ガイドリングとすることができる(請求項4)。
角型基板は辺の部分よりも角部が過剰に研磨され易いが、基板の辺の部分に対応する位置に切り欠き部が形成されているガイドリングを用いれば、対応する基板の辺の部分における研磨が促進され、角部と辺の部分をほぼ同じ研磨速度で研磨することが可能となる。
For the rectangular substrate, the notch is formed at a position corresponding to at least one side of the rectangular substrate accommodated in the accommodating portion (Claim 3), preferably at a position corresponding to each side. It may be a guide ring (claim 4).
A square substrate is more easily polished at the corner than at the side, but if a guide ring having a notch formed at a position corresponding to the side of the substrate is used, the corresponding side of the substrate Polishing is promoted, and the corner and side portions can be polished at substantially the same polishing rate.

前記切り欠き部は、前記収容部から外部に向けて幅広となるように形成されたものとすることができる(請求項5)。
このように外部に向けて幅広となる切り欠き部が形成されていれば、切り欠き部を通じてガイドリングの外側から研磨剤を呼び込み易くなり、研磨効率を確実に向上させることができるものとなる。
The cutout portion may be formed so as to become wider from the housing portion toward the outside (Claim 5).
Thus, if the notch part which becomes wide toward the exterior is formed, it will become easy to attract an abrasive | polishing agent from the outer side of a guide ring through a notch part, and it can improve polishing efficiency reliably.

また、前記角型基板の辺に対応する位置に、該基板の角部に対応する位置よりも基板とのクリアランスが大きくなる部分が形成されており、該大きなクリアランスと外部に通じる切り欠き部が連通するように形成されているものとすることもできる(請求項6)。
このようなガイドリングであれば、ガイドリングと基板の辺の部分との間に形成される大きなクリアランスの部分は、切り欠き部を通じて外部から研磨剤が呼び込まれるとともに、研磨布の沈み込みが小さくなる。従って、基板の辺の部分の研磨効率がより向上し、高い平坦度及び対称性を有する角型基板に仕上げることができる。
In addition, a portion where the clearance with the substrate is larger than the position corresponding to the corner portion of the substrate is formed at a position corresponding to the side of the square substrate, and the notch portion communicating with the large clearance and the outside is formed. It can also be formed so as to communicate (claim 6).
With such a guide ring, the large clearance portion formed between the guide ring and the side portion of the substrate has the abrasives drawn from the outside through the cutouts and the polishing cloth sinks. Get smaller. Therefore, the polishing efficiency of the side portion of the substrate is further improved, and a square substrate having high flatness and symmetry can be finished.

また、本発明によれば、角型基板を保持し、該基板を研磨布に押圧して研磨するための研磨ヘッドであって、少なくとも、前記基板を吸着保持するための基板保持手段と、前記基板を研磨布に押圧するための基板押圧手段と、前記本発明に係るガイドリングとを具備することを特徴とする角型基板用研磨ヘッドが提供される(請求項7)。   Further, according to the present invention, there is provided a polishing head for holding a square substrate and pressing the substrate against a polishing cloth for polishing, and at least a substrate holding means for sucking and holding the substrate, A square substrate polishing head comprising a substrate pressing means for pressing a substrate against a polishing cloth and the guide ring according to the present invention is provided.

本発明に係るガイドリングを備えた研磨ヘッドであれば、研磨中、切り欠き部が形成されている部分にはガイドリングの外側から相対的に多くの研磨剤が供給されるとともに、研磨布の沈み込みが小さくなり、対応する基板の周辺部の研磨を促進することができるものとなる。従って、この研磨ヘッドを用いれば、複雑な押圧機構を持たない場合にも位置選択的な研磨が可能となり、容易にかつ確実に高い平坦度及び対称性を有する角型基板に仕上げることができる。   In the polishing head provided with the guide ring according to the present invention, a relatively large amount of abrasive is supplied from the outside of the guide ring to the portion where the notch is formed during polishing, Subduction is reduced, and polishing of the peripheral portion of the corresponding substrate can be promoted. Therefore, if this polishing head is used, position-selective polishing can be performed even without a complicated pressing mechanism, and a square substrate having high flatness and symmetry can be easily and surely finished.

さらに本発明によれば、角型基板を保持し、研磨布に対して研磨剤を供給するとともに、該研磨布に前記基板を押圧しながら研磨する方法において、前記本発明に係るガイドリングを用い、該ガイドリングの収容部に前記角型基板を収容して研磨を行うことを特徴とする角型基板の研磨方法が提供される(請求項8)。   Furthermore, according to the present invention, the guide ring according to the present invention is used in a method of holding a square substrate, supplying an abrasive to the polishing cloth, and polishing while pressing the substrate against the polishing cloth. A polishing method for a rectangular substrate is provided in which the rectangular substrate is accommodated in the accommodating portion of the guide ring to perform polishing (Claim 8).

本発明に係るガイドリングを用いて角型基板の研磨を行えば、収容部に収容された角型基板の周辺部のうち切り欠き部に面している部分は、ガイドリングの外側から相対的に多くの研磨剤が供給され、また、研磨布の沈み込みが小さくなることで研磨布による弾性力を強く受けることになる。従って、この方法によれば、複雑な押圧機構を持たない場合にも、位置選択的に研磨速度を高くすることができ、容易にかつ確実に高い平坦度及び対称性を有する角型基板に仕上げることができる。   If the square substrate is polished using the guide ring according to the present invention, the portion facing the cutout portion of the peripheral portion of the square substrate accommodated in the accommodating portion is relative to the outside of the guide ring. In addition, a large amount of abrasive is supplied, and the subsidence of the polishing cloth is reduced, so that the elastic force of the polishing cloth is strongly received. Therefore, according to this method, even when a complicated pressing mechanism is not provided, the polishing rate can be increased in a position-selective manner, and a square substrate having high flatness and symmetry can be easily and surely finished. be able to.

この場合、前記角型基板として、フォトマスク基板を研磨することができる(請求項9)。
フォトマスク基板は特に高い平坦度が要求される角型基板であるので、本発明に係るガイドリングを用いた研磨方法が特に有効となる。
In this case, a photomask substrate can be polished as the square substrate.
Since the photomask substrate is a square substrate that requires particularly high flatness, the polishing method using the guide ring according to the present invention is particularly effective.

本発明に係るガイドリングは、研磨布と接する側の面において収容部の周辺の一部にガイドリングの外部に通じる切り欠き部が形成されている。収容部に収容された角型基板の周辺部のうち切り欠き部に面している部分は、ガイドリングの外側から相対的に多くの研磨剤が供給され、また、研磨布の沈み込みが小さくなることで研磨布による弾性力を強く受けることになる。従って、このようなガイドリングを用いてフォトマスク基板等の角型基板の研磨を行えば、容易にかつ確実に位置選択的に研磨効率が向上し、基板の角部と辺の部分を同程度の研磨速度で研磨したり、対称性が崩れた基板の平坦度を修正して高い平坦度及び対称性を有する角型基板に仕上げることができる。   In the guide ring according to the present invention, a cutout portion that communicates with the outside of the guide ring is formed in a part of the periphery of the housing portion on the surface in contact with the polishing pad. Of the peripheral part of the square substrate accommodated in the accommodating part, the part facing the notch is supplied with a relatively large amount of abrasive from the outside of the guide ring, and the sinking of the polishing cloth is small. As a result, the elastic force by the polishing cloth is strongly received. Therefore, when a square substrate such as a photomask substrate is polished using such a guide ring, the polishing efficiency can be improved easily and reliably in a position-selective manner, and the corners and sides of the substrate are approximately equal. The substrate can be polished at a polishing rate of 5 mm, or the flatness of the substrate whose symmetry is broken can be corrected to finish a rectangular substrate having high flatness and symmetry.

以下、本発明について詳しく説明する。
本発明者らはフォトマスク基板等の角型基板の研磨について鋭意検討を重ねたところ、基板を収容する収容部の周辺の一部においてガイドリングの外部に通じる切り欠き部が形成されているガイドリングとすれば、基板の周辺部のうち、ガイドリングの切り欠き部に面している部分は、相対的に多量の研磨剤が供給されるとともに研磨布の強い弾性力を受けることにより、研磨を促進することができることを見出した。従って、角型基板の周辺部の研磨速度を高くしたい部分に対応する位置に外部に通じる切り欠き部が形成されたガイドリングとすれば、基板の周辺部をほぼ均一に研磨したり、あるいは対称性の崩れた基板の平坦性を修正することができ、全体として平坦度の高い基板に仕上げることができることを見出し、本発明の完成に至った。
The present invention will be described in detail below.
As a result of intensive studies on polishing of a square substrate such as a photomask substrate, the present inventors have found a guide in which a cutout portion communicating with the outside of the guide ring is formed in a part of the periphery of the housing portion for housing the substrate. In the case of a ring, the portion of the peripheral portion of the substrate that faces the notch portion of the guide ring is polished by receiving a relatively large amount of abrasive and receiving the strong elastic force of the polishing cloth. Found that can be promoted. Therefore, if the guide ring is formed with a notch that leads to the outside at a position corresponding to the portion where the polishing speed of the peripheral portion of the square substrate is desired to be increased, the peripheral portion of the substrate is polished almost uniformly or symmetrically. The present inventors have found that the flatness of a substrate having a deteriorated property can be corrected and the substrate can be finished as a whole with a high flatness, and the present invention has been completed.

以下、添付の図面に基づいてより具体的に説明する。
図1は、本発明に係る角型基板用ガイドリングの一例を概略的に示している。このガイドリング1は四角形状のフォトマスク基板6を収容するため、基板6の形状に対応した収容部2を有している。そして、ガイドリング1の研磨布と接する側の面3には、収容部2に収容される基板6の各辺6aに対応する位置に、収容部2からガイドリング1の外部に通じる切り欠き部4が形成されている。各切り欠き部4は外部に向けて幅広となるように形成されており、いわば開口部となるような形状をしている。
一方、基板6の四隅の角部6bに対応する位置には、基板6の角部6bを支持することにより位置決めする支持部5が形成されている。
Hereinafter, a more specific description will be given with reference to the accompanying drawings.
FIG. 1 schematically shows an example of a guide ring for a square substrate according to the present invention. The guide ring 1 has an accommodating portion 2 corresponding to the shape of the substrate 6 in order to accommodate a rectangular photomask substrate 6. The surface 3 of the guide ring 1 that is in contact with the polishing cloth has a cutout portion that leads from the housing portion 2 to the outside of the guide ring 1 at a position corresponding to each side 6a of the substrate 6 that is housed in the housing portion 2. 4 is formed. Each notch 4 is formed to be wide toward the outside, and is so shaped as to be an opening.
On the other hand, support portions 5 that are positioned by supporting the corner portions 6 b of the substrate 6 are formed at positions corresponding to the corner portions 6 b of the four corners of the substrate 6.

ガイドリング1の材質は特に限定されないが、成形性、耐久性のほか、基板に対するキズや汚染を防止する観点から、例えば、塩化ビニル樹脂、PPS、PEEKなどの合成樹脂を用いることができる。また、フォトマスク基板と同じ材質となる石英を用いることもできる。   The material of the guide ring 1 is not particularly limited, but synthetic resin such as vinyl chloride resin, PPS, and PEEK can be used from the viewpoint of preventing scratches and contamination on the substrate in addition to moldability and durability. Further, quartz which is the same material as the photomask substrate can be used.

図2(A)(B)は、図1に示したガイドリング1を備えた研磨ヘッド10の断面を概略的に示したものであり、図2(A)は図1のA−A′線に沿った断面を、図2(B)はB−B′線に沿った断面をそれぞれ示している。この研磨ヘッド10は、フォトマスク基板6を保持して研磨布13に押圧する手段として、基板6と同様の四角形状のトップリング9を有し、トップリング9を囲むように円形状のガイドリング1が設けられている。   2A and 2B schematically show a cross section of the polishing head 10 provided with the guide ring 1 shown in FIG. 1, and FIG. 2A shows the AA ′ line in FIG. FIG. 2B shows a cross section taken along line BB ′. The polishing head 10 has a rectangular top ring 9 similar to the substrate 6 as a means for holding the photomask substrate 6 and pressing it against the polishing cloth 13, and a circular guide ring surrounding the top ring 9. 1 is provided.

トップリング9の内部には基板6を真空吸着するための通気路8が形成されている。また、トップリング9の下面には基板6の裏面側の周辺部に当接するゴムリング(ゴムパッキン)7が貼り付けられている。ゴムリング7は、トップリング9と基板6との間の空間をシールして基板6を真空吸着保持するためのものであり、シリコーンゴム、ニトリルゴム、スチレンブタジエンゴム、フッ素ゴム等から構成することができる。あるいは、ポリアセタール樹脂、フッ素系樹脂などの合成樹脂製のリングを用いることもできる。このようなゴムや合成樹脂からなるリング7を介すことで基板6をキズを付けずに吸着保持することができる。ただし、基板6の汚染やキズによるフォトマスクの露光への影響をより確実に防ぐため、ゴムリング7は、フォトマスクの露光に影響しない裏面の周辺部、例えば、基板6の最外周部(縁部)から1〜3mmの領域で接するように設けることが好ましい。   Inside the top ring 9 is formed a ventilation path 8 for vacuum suction of the substrate 6. Further, a rubber ring (rubber packing) 7 is attached to the lower surface of the top ring 9 so as to be in contact with the peripheral portion on the back surface side of the substrate 6. The rubber ring 7 is for sealing the space between the top ring 9 and the substrate 6 and holding the substrate 6 by vacuum suction, and is made of silicone rubber, nitrile rubber, styrene butadiene rubber, fluorine rubber, or the like. Can do. Alternatively, a ring made of a synthetic resin such as a polyacetal resin or a fluorine resin can be used. By using such a ring 7 made of rubber or synthetic resin, the substrate 6 can be adsorbed and held without being scratched. However, in order to more reliably prevent the contamination of the substrate 6 and the influence of the scratch on the exposure of the photomask, the rubber ring 7 has a peripheral portion on the back surface that does not affect the exposure of the photomask, for example, the outermost peripheral portion (edge) of the substrate 6. Part) is preferably provided so as to be in contact with an area of 1 to 3 mm.

このような研磨ヘッド10によりフォトマスク基板6を保持して研磨を行う場合、まず、基板6をガイドリング1の収容部2に収容する。基板6の四隅の角部6bがガイドリング1の支持部5で支持されることで位置決めされる。そして、通気路8を通じて真空吸引することにより、ゴムリング7を介して基板6が吸着保持される。   When polishing by holding the photomask substrate 6 with such a polishing head 10, first, the substrate 6 is accommodated in the accommodating portion 2 of the guide ring 1. The four corners 6b of the substrate 6 are positioned by being supported by the support portions 5 of the guide ring 1. The substrate 6 is sucked and held via the rubber ring 7 by vacuum suction through the ventilation path 8.

研磨布13が貼り付けられた定盤と研磨ヘッド10をそれぞれ所定の方向に回転させ、研磨布13に対して研磨剤を供給するともに、研磨ヘッド10に保持された基板6を研磨布13に押圧する。このとき、基板6はゴムリング7を介して周辺部に荷重がかかるので、周辺部が研磨され易くなる。そこで、基板6を研磨布13に接触させた後、通気路8を通じて空気や窒素を供給して基板6の裏面側を加圧すれば、基板全体の研磨荷重をほぼ均一にすることができる。通気路8から空気等を供給して加圧することにより基板6の吸着は解除されることになるが、ガイドリング1の収容部2内で基板6の少なくとも角部6bが支持されているので、基板6がガイドリング1内で位置ずれしたり、ガイドリング1から外れることはない。   The surface plate to which the polishing cloth 13 is attached and the polishing head 10 are each rotated in a predetermined direction to supply an abrasive to the polishing cloth 13 and the substrate 6 held by the polishing head 10 is attached to the polishing cloth 13. Press. At this time, since a load is applied to the peripheral portion of the substrate 6 via the rubber ring 7, the peripheral portion is easily polished. Therefore, if the substrate 6 is brought into contact with the polishing cloth 13 and then air or nitrogen is supplied through the air passage 8 to pressurize the back side of the substrate 6, the polishing load of the entire substrate can be made substantially uniform. The suction of the substrate 6 is released by supplying air or the like from the air passage 8 and pressurizing it, but since at least the corner 6b of the substrate 6 is supported in the accommodating portion 2 of the guide ring 1, The substrate 6 is not displaced in the guide ring 1 or detached from the guide ring 1.

なお、トップリング9とガイドリング1は同じ押圧機構により押圧が制御されてもよいし、トップリング9の押圧機構とは別にガイドリング1用の押圧機構を設けてもよい。
また、研磨剤は、図7の研磨装置と同様に研磨ヘッドの外側から供給することができるが、研磨ヘッドの内部に研磨剤を供給する機構を設けてもよい。
また、ゴムリング7の代わりに、図3に示したようなゴム製のバッキングパッド11を介して基板6を保持してもよい。全面に多数の通気孔が形成されたバッキングパッド11を用いることでトップリング9の通気路8を通じて基板6を真空吸着することができ、バッキングパッド11を介して基板6の全面を均一に押圧することができる。
The top ring 9 and the guide ring 1 may be controlled to be pressed by the same pressing mechanism, or a pressing mechanism for the guide ring 1 may be provided separately from the pressing mechanism of the top ring 9.
The abrasive can be supplied from the outside of the polishing head as in the polishing apparatus of FIG. 7, but a mechanism for supplying the abrasive to the inside of the polishing head may be provided.
Further, instead of the rubber ring 7, the substrate 6 may be held via a rubber backing pad 11 as shown in FIG. By using the backing pad 11 having a large number of ventilation holes formed on the entire surface, the substrate 6 can be vacuum-sucked through the ventilation path 8 of the top ring 9, and the entire surface of the substrate 6 is pressed uniformly through the backing pad 11. be able to.

上記のように本発明のガイドリング1を用いて基板6と研磨布13を摺接させて研磨を行うと、図2(A)に示されるように、基板6の各辺6aの中央部分には、ガイドリング1の開口部4を通じて研磨剤が呼び込まれる。また、ガイドリング1の開口部4の下では研磨布13の沈み込みが小さくなるため、開口部4に面する基板6の各辺6aの中央部分は研磨布13による弾性力を強く受けることになる。すなわち、収容部2に収容されたフォトマスク基板6の辺6aの中央部分には、相対的に多くの研磨剤が供給されるとともに研磨布13による弾性力を強く受けることにより、研磨が促進されることになる。
一方、基板6の角部6bの周囲では、図2(B)に見られるように研磨布13がガイドリング1の支持部5により押圧され大きく沈み込まれる。従って、基板6の角部6bの付近では、辺6aの中央部分に比べ、研磨剤の供給量が少なく、研磨布13の弾性力も小さいため、研磨が抑制される。
As described above, when polishing is performed by sliding the substrate 6 and the polishing pad 13 using the guide ring 1 according to the present invention, as shown in FIG. The abrasive is drawn through the opening 4 of the guide ring 1. Further, since the sinking of the polishing cloth 13 is reduced under the opening 4 of the guide ring 1, the central portion of each side 6 a of the substrate 6 facing the opening 4 is strongly subjected to the elastic force by the polishing cloth 13. Become. That is, a relatively large amount of abrasive is supplied to the central portion of the side 6a of the photomask substrate 6 accommodated in the accommodating portion 2, and polishing is promoted by receiving strong elastic force from the polishing cloth 13. Will be.
On the other hand, around the corner portion 6b of the substrate 6, the polishing cloth 13 is pressed and greatly sunk by the support portion 5 of the guide ring 1 as seen in FIG. Therefore, in the vicinity of the corner portion 6b of the substrate 6, since the amount of abrasive supplied is small and the elastic force of the polishing pad 13 is small compared to the central portion of the side 6a, polishing is suppressed.

すなわち、このようなガイドリング1を備えた研磨ヘッド10で角型のフォトマスク基板6を保持して研磨を行えば、一般的に研磨速度が小さくなる基板6の辺6aの中央部分では相対的に研磨効率が高くなり、研磨速度が大きくなり易い角部6bの周辺では相対的に研磨効率が小さくなり、過研磨を効果的に防止することができる。その結果、基板6の周辺部全体にわたって高い平坦度を有するフォトマスク基板に仕上げることができる。   In other words, if polishing is performed while holding the square photomask substrate 6 with the polishing head 10 having such a guide ring 1, the center portion of the side 6a of the substrate 6 where the polishing speed is generally reduced is relative. In addition, the polishing efficiency is relatively reduced in the vicinity of the corner portion 6b where the polishing efficiency is increased and the polishing rate is likely to be increased, and overpolishing can be effectively prevented. As a result, a photomask substrate having high flatness over the entire periphery of the substrate 6 can be finished.

本発明では、トップリング、ガイドリング等の形状は図1、図2に示したものに限定されず、他の形状のものも採用することができる。
図4は、本発明に係るガイドリングの他の例を示している。このガイドリング51は、研磨布と接する側の面において、フォトマスク基板6の1つの辺6aに対応する位置に、収容部52から外部に向けて幅広となる切り欠き部(開口部)54が形成されている。このようなガイドリング51は、対称性が崩れた基板の平坦度を修正する場合に好適に使用することができる。例えば、初期の研磨において、両面研磨装置により基板の左右で対称性が崩れた形で研磨された場合、基板の平坦度を上げるために、より削り取るべき側が開口部54に面するように基板6を収容して研磨を行う。開口部54に面する部分には相対的に多量の研磨剤が供給されるとともに研磨布による弾性力を強く受けるので、研磨が促進され、平坦度が大きく改善されることになる。従って、このようなガイドリング51を用いれば、複雑な押圧機構を設けなくても位置選択的な研磨が可能となり、対称性が崩れた基板の平坦度を修正することができる。
In the present invention, the shapes of the top ring, the guide ring and the like are not limited to those shown in FIGS. 1 and 2, and other shapes can also be adopted.
FIG. 4 shows another example of the guide ring according to the present invention. The guide ring 51 has a notch portion (opening portion) 54 that is wide from the housing portion 52 toward the outside at a position corresponding to one side 6 a of the photomask substrate 6 on the surface in contact with the polishing cloth. Is formed. Such a guide ring 51 can be suitably used when correcting the flatness of a substrate whose symmetry has been lost. For example, in the initial polishing, when the double-side polishing apparatus is used to polish the left and right sides of the substrate so that the symmetry is lost, in order to increase the flatness of the substrate, the side of the substrate 6 to be scraped further faces the opening 54. Is contained and polished. Since a relatively large amount of abrasive is supplied to the portion facing the opening 54 and elastic force is strongly received by the polishing cloth, the polishing is promoted and the flatness is greatly improved. Therefore, if such a guide ring 51 is used, position-selective polishing can be performed without providing a complicated pressing mechanism, and the flatness of the substrate whose symmetry is broken can be corrected.

また、本発明に係るガイドリングの切り欠き部は、図1、図4に示したような外部に向けて幅広となる形状に限定されず、例えば幅が略一定となる溝形状としてもよい。
図5に示すガイドリングは、フォトマスク基板6の1つの辺6aに対応する位置に、基板6の角部6bに対応する位置よりも基板6とのクリアランス65が大きくなる部分が形成され、この大きなクリアランス65と、ガイドリング61の外部に通じる切り欠き部(溝部)64a,64bとが連通している。このようなガイドリング61の収容部62内にフォトマスク基板6を収容して研磨を行えば、溝部64a,64bを通じてガイドリング61の外側から研磨剤がクリアランス65内に取り込まれ、また、大きなクリアランス65が形成されている部分では研磨布の沈み込みが小さくなる。すなわち、大きなクリアランス65が形成されている基板6の辺6aの中央部分は、相対的に多量の研磨剤が供給されるとともに、研磨布による弾性力を強く受けることで研磨が促進されることになる。従って、このガイドリング61を用いれば、複雑な押圧機構を設けなくても位置選択的な研磨が可能となり、対称性が崩れた基板の平坦度を修正することができる。
Moreover, the notch part of the guide ring which concerns on this invention is not limited to the shape which becomes wide toward the exterior as shown to FIG. 1, FIG. 4, For example, it is good also as a groove | channel shape from which a width | variety becomes substantially constant.
In the guide ring shown in FIG. 5, a portion where the clearance 65 with the substrate 6 is larger than the position corresponding to the corner 6 b of the substrate 6 is formed at a position corresponding to one side 6 a of the photomask substrate 6. The large clearance 65 communicates with notches (grooves) 64a and 64b communicating with the outside of the guide ring 61. When the photomask substrate 6 is accommodated in the accommodating portion 62 of the guide ring 61 and polished, the abrasive is taken into the clearance 65 from the outside of the guide ring 61 through the groove portions 64a and 64b, and a large clearance is obtained. In the portion where 65 is formed, the sinking of the polishing cloth is reduced. That is, the central portion of the side 6a of the substrate 6 on which the large clearance 65 is formed is supplied with a relatively large amount of polishing agent and is strongly polished by receiving an elastic force from the polishing cloth. Become. Therefore, if this guide ring 61 is used, position-selective polishing can be performed without providing a complicated pressing mechanism, and the flatness of the substrate whose symmetry is broken can be corrected.

なお、上記のようなクリアランスと溝部の数、位置、形状等は図5に示したものに限定されるものではない。例えば図6に示したように基板6の4つの各辺6aに対応する位置に、大きなクリアランス75と、これに連通する溝74a,74bをそれぞれ形成したガイドリング71とすれば、基板6の各辺6aの中央部分では相対的に研磨効率を高くし、角部6bの周辺では研磨効率を小さくすることができる。その結果、基板6の周辺部全体にわたって高い平坦度を有するフォトマスク基板に仕上げることができる。   Note that the number of clearances and the number of grooves, positions, shapes, and the like are not limited to those shown in FIG. For example, as shown in FIG. 6, if the guide ring 71 is formed with a large clearance 75 and grooves 74 a and 74 b communicating with each other at positions corresponding to the four sides 6 a of the substrate 6, The polishing efficiency can be relatively increased at the center portion of the side 6a, and the polishing efficiency can be decreased around the corner portion 6b. As a result, a photomask substrate having high flatness over the entire periphery of the substrate 6 can be finished.

また、クリアランスとこれに連通する溝も図5、6の形態に限定されず、必要に応じ、フォトマスク基板の2つあるいは3つの辺に対応する位置に形成されるようにしてもよい。
また、目的に応じてフォトマスク基板の角部における研磨をより促進したい場合には、角部に対応する位置に図1に示したような外部に通じる開口部を設けてもよいし、図5に示したような大きなクリアランスとこれに連通する溝を設けてもよい。
さらに、ガイドリングは円形状のものに限定されず、例えば図13に示したような四角形状のガイドリング91とすることもできる。なお、このガイドリング91には、四角形の基板の各辺に対応する位置に一定幅の開口部94が形成されている。
Further, the clearance and the groove communicating with the clearance are not limited to the forms shown in FIGS. 5 and 6, and may be formed at positions corresponding to two or three sides of the photomask substrate, if necessary.
Further, when it is desired to further promote polishing at the corner of the photomask substrate according to the purpose, an opening leading to the outside as shown in FIG. 1 may be provided at a position corresponding to the corner, or FIG. A large clearance and a groove communicating with the large clearance may be provided.
Further, the guide ring is not limited to a circular one, and may be a rectangular guide ring 91 as shown in FIG. 13, for example. The guide ring 91 has an opening 94 having a constant width at a position corresponding to each side of the rectangular substrate.

以上説明したように、本発明に係るガイドリングを備えた研磨ヘッドでフォトマスク基板を保持して研磨を行えば、例えば基板の最外周部から内側の5mmを除く領域において0.3μm以下の平坦度を達成することができる。そして、研磨後のフォトマスク基板を用いてフォトマスクを作製すれば、LSI、VLSI等の高密度集積回路を安定的に半導体ウエーハ上に転写することができるフォトマスクを得ることができる。   As described above, when polishing is performed by holding the photomask substrate with the polishing head having the guide ring according to the present invention, for example, a flat area of 0.3 μm or less in the region excluding the innermost 5 mm from the outermost peripheral portion of the substrate. Degree can be achieved. When a photomask is manufactured using the polished photomask substrate, a photomask capable of stably transferring a high-density integrated circuit such as LSI or VLSI onto a semiconductor wafer can be obtained.

以下、本発明の実施例及び比較例について説明する。
(実施例)
図10に示したようにフォトマスク基板6の各辺に対応する位置に外側に向けて幅広となる開口部(切り欠き部)84を形成した四角形状のガイドリング81(PPS製)を作製した。このガイドリング81を研磨ヘッドに装着し、片面研磨装置を用いて152mm×152mm×6.35mmの合成石英ガラス基板の研磨を行った。研磨では、基板の押圧荷重を20kPaとし、研磨剤としてコロイダルシリカを用い、研磨布はスエード状のものを使用し、10分間研磨を行った。なお、凹形状の基板から研磨を開始し、基板の辺の中央部分が基板の中心部と標高がほぼ同じ高さとなる時点を研磨終了の目安とした。
研磨前後において、142mm×142mmの内側領域の平坦度を測定した。図11は研磨前後における基板の平坦度を示している。研磨前(A)の平坦度は0.314μmであったが、研磨後(B)は0.139μmの平坦度が達成された。
Examples of the present invention and comparative examples will be described below.
(Example)
As shown in FIG. 10, a rectangular guide ring 81 (manufactured by PPS) in which openings (notches) 84 that are widened outwardly at positions corresponding to the respective sides of the photomask substrate 6 were formed. . The guide ring 81 was mounted on a polishing head, and a 152 mm × 152 mm × 6.35 mm synthetic quartz glass substrate was polished using a single-side polishing apparatus. In the polishing, the pressing load of the substrate was 20 kPa, colloidal silica was used as the polishing agent, and a polishing cloth was used for polishing for 10 minutes. The polishing was started from the concave substrate, and the point in time when the central portion of the side of the substrate was almost the same height as the central portion of the substrate was used as a guideline for finishing the polishing.
Before and after polishing, the flatness of an inner region of 142 mm × 142 mm was measured. FIG. 11 shows the flatness of the substrate before and after polishing. The flatness before polishing (A) was 0.314 μm, but after polishing (B), a flatness of 0.139 μm was achieved.

(比較例)
図8に示したような研磨側の面も切り欠き部がなく、クリアランスも一定となっているガイドリングを用いて実施例と同様に合成石英ガラス基板の研磨を行った。
研磨前後において、142mm×142mmの内側領域の平坦度を測定した。図12は研磨前後における基板の平坦度を示している。研磨前(A)の平坦度は0.322μmであったが、研磨後(B)の平坦度は0.376μmに悪化していた。特に辺部に比べて四隅の角部の過研磨が著しかった。
(Comparative example)
The synthetic quartz glass substrate was polished in the same manner as in the example using a guide ring having no notch on the polishing side surface as shown in FIG. 8 and a constant clearance.
Before and after polishing, the flatness of an inner region of 142 mm × 142 mm was measured. FIG. 12 shows the flatness of the substrate before and after polishing. The flatness before polishing (A) was 0.322 μm, but the flatness after polishing (B) was deteriorated to 0.376 μm. In particular, overpolishing at the corners of the four corners was significant compared to the sides.

本発明は、上記実施形態に限定されるものではない。上記実施形態は単なる例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。   The present invention is not limited to the above embodiment. The above embodiment is merely an example, and the present invention has the same configuration as that of the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

例えば、上記実施形態では略正方形のフォトマスク基板を研磨する場合について説明したが、本発明により研磨する角型基板はこれに限定されず、液晶基板やディスク基板等の高い平坦度が要求される角型基板の研磨にも適用できるし、基板の形状は、長方形等の四角形状のほか、多角形の基板でもよい。   For example, in the above embodiment, the case of polishing a substantially square photomask substrate has been described. However, the rectangular substrate to be polished according to the present invention is not limited to this, and high flatness such as a liquid crystal substrate or a disk substrate is required. It can also be applied to polishing a square substrate, and the shape of the substrate may be a rectangular substrate or a polygonal substrate.

また、本発明に係るガイドリングは、切り欠き部に面する部分で研磨効率が高められるので、ガイドリングに対する複雑な押圧機構を設けずに位置選択的な研磨が可能となるが、選択的な研磨の効果を一層高めるため、複数の押圧機構を設けてガイドリングを部分的に加重を高めてもよいし、ガイドリングを複数に分割したものとしてもよい。   Further, the guide ring according to the present invention can improve the polishing efficiency at the portion facing the notch, so that position selective polishing is possible without providing a complicated pressing mechanism for the guide ring. In order to further enhance the polishing effect, a plurality of pressing mechanisms may be provided to partially increase the weight of the guide ring, or the guide ring may be divided into a plurality of parts.

本発明に係るガイドリングの一例を示す概略平面図である。It is a schematic plan view which shows an example of the guide ring which concerns on this invention. 図1のガイドリングを備えた研磨ヘッドの一例を示す概略断面図である。(A)A−A′線断面 (B)B−B′線断面It is a schematic sectional drawing which shows an example of the grinding | polishing head provided with the guide ring of FIG. (A) AA 'line cross section (B) BB' line cross section バッキングパッドを介して基板を保持した状態を示す概略断面図である。It is a schematic sectional drawing which shows the state which hold | maintained the board | substrate via the backing pad. 本発明に係るガイドリングの他の例を示す概略平面図である。It is a schematic plan view which shows the other example of the guide ring which concerns on this invention. 本発明に係るガイドリングのさらに他の例を示す概略平面図である。It is a schematic plan view which shows the other example of the guide ring which concerns on this invention. 本発明に係るガイドリングのさらに他の例を示す概略平面図である。It is a schematic plan view which shows the other example of the guide ring which concerns on this invention. 片面研磨装置の構成の一例を示す概略図である。It is the schematic which shows an example of a structure of a single-side polish apparatus. 角型基板用の一般的なガイドリングの一例を示す概略平面図である。It is a schematic plan view which shows an example of the general guide ring for square substrates. 分割されたガイドリングの一例を示す概略平面図である。It is a schematic plan view which shows an example of the divided | segmented guide ring. 実施例で用いたガイドリングを示す概略平面図である。It is a schematic plan view which shows the guide ring used in the Example. 実施例における研磨前後の基板の平坦度を示す図である。(A)研磨前 (B)研磨後It is a figure which shows the flatness of the board | substrate before and behind grinding | polishing in an Example. (A) Before polishing (B) After polishing 比較例における研磨前後の基板の平坦度を示す図である。(A)研磨前 (B)研磨後It is a figure which shows the flatness of the board | substrate before and behind grinding | polishing in a comparative example. (A) Before polishing (B) After polishing 本発明に係る四角型のガイドリングを示す概略平面図である。It is a schematic plan view showing a square guide ring according to the present invention.

符号の説明Explanation of symbols

1…ガイドリング、 2…収容部、 3…研磨布と接触する側の面、 4…切り欠き部(開口部)、 5…支持部、 6…フォトマスク基板、 6a…辺の部分、 6b…角部、 7…ゴムリング(ゴムパッキン)、 8…通気路、 9…トップリング、 10…研磨ヘッド、 11…バッキングパッド、 13…研磨布、 64a,64b…切り欠き部(溝部)、 65…クリアランス。   DESCRIPTION OF SYMBOLS 1 ... Guide ring, 2 ... Storage part, 3 ... Surface on the side which contacts polishing cloth, 4 ... Notch part (opening part), 5 ... Support part, 6 ... Photomask substrate, 6a ... Side part, 6b ... Corner part, 7 ... Rubber ring (rubber packing), 8 ... Air passage, 9 ... Top ring, 10 ... Polishing head, 11 ... Backing pad, 13 ... Polishing cloth, 64a, 64b ... Notch part (groove part), 65 ... clearance.

Claims (9)

角型基板を研磨布に対して押圧しながら研磨する際に、前記基板の周囲で前記研磨布を押圧することにより基板の周辺部の過剰な研磨を防ぐためのガイドリングであって、前記基板を収容する収容部を有し、少なくとも前記研磨布と接する側の面において、前記収容部の周辺の一部に該ガイドリングの外部に通じる切り欠き部が形成されていることを特徴とする角型基板研磨用ガイドリング。   A guide ring for preventing excessive polishing of a peripheral portion of a substrate by pressing the polishing cloth around the substrate when the square substrate is polished against the polishing cloth. And a notch that communicates with the outside of the guide ring is formed in a part of the periphery of the accommodating portion at least on the surface in contact with the polishing pad. Guide ring for mold substrate polishing. 前記収容部が、四角形状の角型基板を収容するものであることを特徴とする請求項1に記載の角型基板研磨用ガイドリング。   The square substrate polishing guide ring according to claim 1, wherein the accommodating portion accommodates a rectangular prismatic substrate. 前記切り欠き部が、前記収容部に収容される角型基板の少なくとも1つの辺に対応する位置に形成されていることを特徴とする請求項1又は請求項2に記載の角型基板研磨用ガイドリング。   3. The rectangular substrate polishing according to claim 1, wherein the notch is formed at a position corresponding to at least one side of the rectangular substrate accommodated in the accommodating portion. Guide ring. 前記切り欠き部が、前記収容部に収容される角型基板の各辺に対応する位置に形成されていることを特徴とする請求項3に記載の角型基板研磨用ガイドリング。   4. The square substrate polishing guide ring according to claim 3, wherein the notch is formed at a position corresponding to each side of the square substrate accommodated in the accommodating portion. 前記切り欠き部が、前記収容部から外部に向けて幅広となるように形成されていることを特徴とする請求項1ないし請求項4のいずれか1項に記載の角型基板研磨用ガイドリング。   5. The guide ring for polishing a square substrate according to claim 1, wherein the cutout portion is formed to be wide from the housing portion toward the outside. 6. . 前記角型基板の辺に対応する位置に、該基板の角部に対応する位置よりも基板とのクリアランスが大きくなる部分が形成されており、該大きなクリアランスと外部に通じる切り欠き部が連通するように形成されていることを特徴とする請求項1ないし請求項5のいずれか1項に記載の角型基板研磨用ガイドリング。   A portion where the clearance with the substrate is larger than the position corresponding to the corner portion of the substrate is formed at a position corresponding to the side of the square substrate, and the large clearance and a cutout portion communicating with the outside communicate with each other. 6. The square substrate polishing guide ring according to claim 1, wherein the guide ring is formed as described above. 角型基板を保持し、該基板を研磨布に押圧して研磨するための研磨ヘッドであって、少なくとも、前記基板を吸着保持するための基板保持手段と、前記基板を研磨布に押圧するための基板押圧手段と、前記請求項1ないし請求項6のいずれか1項に記載のガイドリングとを具備することを特徴とする角型基板用研磨ヘッド。   A polishing head for holding a square substrate and pressing the substrate against a polishing cloth for polishing, at least a substrate holding means for adsorbing and holding the substrate, and pressing the substrate against the polishing cloth A polishing head for a square substrate, comprising: the substrate pressing means; and the guide ring according to any one of claims 1 to 6. 角型基板を保持し、研磨布に対して研磨剤を供給するとともに、該研磨布に前記基板を押圧しながら研磨する方法において、前記請求項1ないし請求項6のいずれか1項に記載のガイドリングを用い、該ガイドリングの収容部に前記角型基板を収容して研磨を行うことを特徴とする角型基板の研磨方法。   The method according to any one of claims 1 to 6, wherein the substrate is held, the abrasive is supplied to the polishing cloth, and the substrate is pressed against the polishing cloth while being polished. A method for polishing a square substrate, comprising: using a guide ring; and storing the square substrate in a receiving portion of the guide ring to perform polishing. 前記角型基板として、フォトマスク基板を研磨することを特徴とする請求項8に記載の角型基板の研磨方法。   The method for polishing a square substrate according to claim 8, wherein a photomask substrate is polished as the square substrate.
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