JP2002252191A - Polishing equipment for semiconductor wafer - Google Patents
Polishing equipment for semiconductor waferInfo
- Publication number
- JP2002252191A JP2002252191A JP2001050502A JP2001050502A JP2002252191A JP 2002252191 A JP2002252191 A JP 2002252191A JP 2001050502 A JP2001050502 A JP 2001050502A JP 2001050502 A JP2001050502 A JP 2001050502A JP 2002252191 A JP2002252191 A JP 2002252191A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor wafer
- cloth
- wafer
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 274
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000004744 fabric Substances 0.000 claims abstract description 76
- 230000002093 peripheral effect Effects 0.000 claims abstract description 59
- 238000003825 pressing Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 34
- 239000010703 silicon Substances 0.000 abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 31
- 235000012431 wafers Nutrition 0.000 description 106
- 238000000034 method Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004745 nonwoven fabric Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は半導体ウェーハの
研磨装置、詳しくは半導体ウェーハの一部を研磨布の外
部にはみ出して研磨する際、半導体ウェーハの研磨面
に、研磨布の外周縁との接触による傷が付きにくい半導
体ウェーハの研磨装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for polishing a semiconductor wafer, and more particularly, to a method for polishing a part of a semiconductor wafer outside the polishing cloth and contacting a polishing surface of the semiconductor wafer with an outer peripheral edge of the polishing cloth. The present invention relates to an apparatus for polishing a semiconductor wafer which is hardly damaged by the wafer.
【０００２】[0002]
【従来の技術】シリコンウェーハは、表面を鏡面研磨を
行なって仕上げられている。このシリコンウェーハの表
面は、高平坦度であることが要求される。2. Description of the Related Art Silicon wafers are finished by mirror polishing. The surface of this silicon wafer is required to have high flatness.
【０００３】このシリコンウェーハの研磨装置として、
図２に示すものが知られている。図２（ａ）は従来のシ
リコンウェーハの研磨装置の正面図である。図２（ｂ）
は、この研磨装置の主要部を示す図である。図２（ａ）
に示すように、この研磨装置１００は、上面に研磨布１
０１が展張された研磨定盤１０２と、研磨されるシリコ
ンウェーハＷを固定するためのテンプレート１０３が下
面に設けられた研磨ヘッド１０４とを備えている。テン
プレート１０３の内側に、保水性を有する不織布製のバ
ックパッド１０５を収納している。また、研磨布１０１
の研磨作用面の大きさを、研磨中にシリコンウェーハＷ
の外周部の一部が研磨布１０１の外部にはみ出る大き
さ、具体的には、研磨作用面の外周縁が、研磨時のウェ
ーハ回転軌跡の最外周円よりも半径方向の内方に位置す
る大きさとした。[0003] As a silicon wafer polishing apparatus,
The one shown in FIG. 2 is known. FIG. 2A is a front view of a conventional silicon wafer polishing apparatus. FIG. 2 (b)
FIG. 2 is a view showing a main part of the polishing apparatus. FIG. 2 (a)
As shown in FIG. 1, this polishing apparatus 100 has a polishing cloth 1
The polishing table 102 includes a polishing platen 102 on which 01 is spread, and a polishing head 104 provided with a template 103 on a lower surface for fixing a silicon wafer W to be polished. Inside the template 103, a back pad 105 made of a nonwoven fabric having a water retention property is housed. Also, the polishing cloth 101
The size of the polishing surface of the silicon wafer W during polishing.
A part of the outer peripheral portion of the polishing pad 101 protrudes outside the polishing cloth 101, specifically, the outer peripheral edge of the polishing surface is located radially inward of the outermost peripheral circle of the wafer rotation trajectory during polishing. I made it big.
【０００４】ウェーハ研磨時は、バックパッド１０５に
純水を供給し、その表面張力によってシリコンウェーハ
Ｗをその裏面側から保持する。その後、研磨砥粒を含む
研磨剤（スラリー）を研磨面に供給しながら、研磨ヘッ
ド１０４を研磨定盤１０２上で自転させるとともに、図
２（ａ）の矢印に示す定盤半径方向へ揺動させている。
この結果、シリコンウェーハＷの表面が研磨布１０１に
よって鏡面研磨されることとなる。その際、シリコンウ
ェーハＷの外周部の一部を研磨布１０１の外部にはみ出
しながら研磨する。これにより、研磨布１０１のシリコ
ンウェーハＷとの摺接面の全域において摩擦熱が均一化
する。その結果、ウェーハ平坦度が高められる。At the time of wafer polishing, pure water is supplied to the back pad 105, and the silicon wafer W is held from the back side by the surface tension. Thereafter, the polishing head 104 is rotated on the polishing platen 102 while the polishing agent (slurry) containing the abrasive grains is supplied to the polishing surface, and is swung in the radial direction of the platen indicated by an arrow in FIG. Let me.
As a result, the surface of the silicon wafer W is mirror-polished by the polishing cloth 101. At this time, the polishing is performed while a part of the outer peripheral portion of the silicon wafer W protrudes outside the polishing pad 101. As a result, the frictional heat becomes uniform over the entire area of the surface of the polishing pad 101 that is in sliding contact with the silicon wafer W. As a result, the wafer flatness is enhanced.
【０００５】[0005]
【発明が解決しようとする課題】このように、従来の研
磨装置１００によれば、シリコンウェーハＷの外周部の
一部を研磨布１０１の外部にはみ出して研磨していた。
その際、図２（ｂ）に示すように、研磨定盤１０２の外
周縁は直角断面形状を呈している。研磨布１０１の外周
縁は、この研磨定盤の１０２の外周縁に揃えられて貼着
されている。すなわち、薄肉な研磨布１０１の外周縁は
研磨定盤１０２の固くて鋭角な外周縁に支持されてい
る。したがって、研磨時、シリコンウェーハＷが研磨布
１０１の外部にはみ出す際には、この研磨布１０１の外
周縁と接触するシリコンウェーハＷの研磨面の一部に、
研磨ヘッド１０４からの圧力が集中していた。その結
果、シリコンウェーハＷの研磨面に傷が生じ、ウェーハ
不良の原因となっていた。As described above, according to the conventional polishing apparatus 100, a part of the outer peripheral portion of the silicon wafer W protrudes outside the polishing pad 101 and is polished.
At this time, as shown in FIG. 2B, the outer peripheral edge of the polishing platen 102 has a right-angle cross-sectional shape. The outer peripheral edge of the polishing cloth 101 is aligned and adhered to the outer peripheral edge of the polishing platen 102. That is, the outer peripheral edge of the thin polishing cloth 101 is supported by the hard and sharp outer peripheral edge of the polishing platen 102. Therefore, at the time of polishing, when the silicon wafer W protrudes out of the polishing cloth 101, a part of the polishing surface of the silicon wafer W that comes into contact with the outer peripheral edge of the polishing cloth 101,
The pressure from the polishing head 104 was concentrated. As a result, the polished surface of the silicon wafer W is scratched, causing a wafer defect.
【０００６】[0006]
【発明の目的】そこで、この発明は、半導体ウェーハの
一部を研磨布の外部にはみ出して研磨を行なっても、半
導体ウェーハの研磨面に傷が付きにくい半導体ウェーハ
の研磨装置を提供することを、その目的としている。こ
の発明は、研磨布の外周縁にて外力の集中を排除し、半
導体ウェーハの研磨面に円周状の傷が発生することを防
止することを、その目的としている。SUMMARY OF THE INVENTION It is an object of the present invention to provide an apparatus for polishing a semiconductor wafer, which does not easily damage the polished surface of the semiconductor wafer even when a part of the semiconductor wafer is protruded outside the polishing cloth and polished. , Its purpose. SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the concentration of external force at the outer peripheral edge of a polishing cloth and to prevent circumferential scratches from being generated on a polishing surface of a semiconductor wafer.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載の発明
は、研磨布が展張される研磨定盤と、この研磨定盤に対
向配置され、半導体ウェーハが保持された回転自在の研
磨ヘッドとを備え、上記研磨布の研磨作用面に研磨剤を
供給しながら、上記研磨ヘッドにより回転中の半導体ウ
ェーハを押し付けて研磨する半導体ウェーハの研磨装置
において、上記研磨布の研磨作用面の大きさを、この研
磨作用面の外周縁が、研磨時のウェーハ回転軌跡の最外
周円よりも半径方向の内方に位置する大きさとし、上記
研磨布の研磨作用面を平面で形成された中心部とその外
周部とに区分し、この外周部には、この研磨布の半径方
向外方へ向かうほどに上記平面より徐々に離隔するテー
パ面が形成された半導体ウェーハの研磨装置である。According to a first aspect of the present invention, there is provided a polishing platen on which a polishing cloth is spread, a rotatable polishing head disposed opposite to the polishing platen and holding a semiconductor wafer. In the semiconductor wafer polishing apparatus for polishing by pressing the rotating semiconductor wafer by the polishing head while supplying the polishing agent to the polishing action surface of the polishing cloth, the size of the polishing action surface of the polishing cloth The outer peripheral edge of the polishing action surface has a size that is located radially inward of the outermost circumference circle of the wafer rotation locus during polishing, and the polishing action surface of the polishing cloth is formed as a flat central portion and the center thereof. The semiconductor wafer polishing apparatus is divided into an outer peripheral portion, and a tapered surface is formed on the outer peripheral portion, the tapered surface being gradually separated from the flat surface as going outward in the radial direction of the polishing pad.
【０００８】半導体ウェーハの研磨装置は、例えば半導
体ウェーハを１枚ずつ研磨する枚葉式の研磨装置でもよ
いし、単一の研磨ヘッドに複数枚の半導体ウェーハを支
持して一度に研磨するバッチ式の研磨装置でもよい。こ
の半導体ウェーハの研磨装置には、例えばワックスを使
用しないワックスレスタイプを採用することができる。
もちろん、ワックス研磨タイプでもよい。一般的なワッ
クスレス装置は、ウェーハ直径より若干大径な孔部内に
バックパッド（スエードパッドなど）を配置したテンプ
レートを用い、このバックパッドの表面にある発泡層
（ナップ部）と、ウェーハ裏面とに純水などを供給し
て、その純水の表面張力を利用し、ウェーハのハンドリ
ングを行う。半導体ウェーハとしては、例えばシリコン
ウェーハ、ガリウム砒素ウェーハなどを対象とすること
ができる。また、研磨布には、例えば硬質ウレタンパッ
ド、ＣｅＯ2 パッド、不織布パッドなどを採用すること
ができる。The semiconductor wafer polishing apparatus may be, for example, a single wafer polishing apparatus for polishing semiconductor wafers one by one, or a batch type polishing apparatus for polishing a plurality of semiconductor wafers at once by supporting a plurality of semiconductor wafers on a single polishing head. Polishing apparatus may be used. For this semiconductor wafer polishing apparatus, for example, a waxless type that does not use wax can be adopted.
Of course, a wax polishing type may be used. A general waxless device uses a template in which a back pad (such as a suede pad) is arranged in a hole slightly larger than the diameter of the wafer, and a foam layer (nap portion) on the surface of the back pad and a back surface of the wafer. And supply the pure water to the wafer, and use the surface tension of the pure water to handle the wafer. As the semiconductor wafer, for example, a silicon wafer, a gallium arsenide wafer, or the like can be used. For the polishing cloth, for example, a hard urethane pad, a CeO 2 pad, a non-woven fabric pad, or the like can be used.
【０００９】さらに、研磨剤としては、例えば焼成シリ
カやコロイダルシリカ（研磨砥粒）、アミン（加工促進
材）および有機高分子（ヘイズ抑制材）などを混合した
ものを採用することができる。コロイダルシリカは、珪
酸微粒子の凝集が起こらないで一次粒子のまま水中に分
散した透明もしくは不透明の乳白色のコロイド液を形成
して存在する。研磨布の研磨作用面の大きさは、この面
の外周縁が、研磨時にウェーハ回転軌跡の最外周円より
も半径方向の内方に位置する大きさであれば限定されな
い。そのため、例えば研磨布の外周部の一部または全部
を任意にカットしてもよい。半導体ウェーハは、研磨ヘ
ッドの回転時に研磨作用面からはみ出すだけでなく、研
磨ヘッドの揺動時にはみ出してもよい。なお、枚葉式の
研磨装置の場合には、通常、この揺動時にはみ出すこと
になる。研磨時の半導体ウェーハの外周部の研磨布より
外部へのはみ出し量は限定されない。ただし、半導体ウ
ェーハの直径の１／２の長さ以下が好ましい。これを超
えると、半導体ウェーハの研磨布に対する接触面積およ
び圧力が小さすぎて、ウェーハ中心部分の研磨が促進さ
れ、凹形状のウェーハとなるおそれがある。Further, as the abrasive, for example, a mixture of baked silica, colloidal silica (abrasive grains), amine (a processing accelerator), and an organic polymer (a haze inhibitor) can be employed. Colloidal silica is present as a transparent or opaque milky white colloid liquid dispersed in water as primary particles without agglomeration of silicate fine particles. The size of the polishing surface of the polishing cloth is not limited as long as the outer peripheral edge of this surface is located radially inward of the outermost circumference circle of the wafer rotation trajectory during polishing. Therefore, for example, part or all of the outer peripheral portion of the polishing pad may be arbitrarily cut. The semiconductor wafer may not only protrude from the polishing surface when the polishing head rotates, but may protrude when the polishing head swings. In the case of a single-wafer polishing apparatus, it usually protrudes during this swing. The amount of protrusion outside the polishing cloth on the outer peripheral portion of the semiconductor wafer during polishing is not limited. However, the length is preferably equal to or less than half the diameter of the semiconductor wafer. If it exceeds this, the contact area and pressure of the semiconductor wafer with the polishing cloth are too small, and the polishing of the central portion of the wafer is promoted, which may result in a concave wafer.
【００１０】研磨布の研磨作用面の外周部に傾斜面を形
成する方法は限定されない。例えば、研磨定盤の研磨布
が展張された面の外周部に、研磨定盤の半径方向外方へ
向かうほど、徐々に研磨定盤が薄肉化するテーパ面を形
成し、その後、このテーパ面に研磨布の外周部を展張す
るといった方法を採用することができる。この場合、研
磨定盤の研磨布が展張される面の外周部を、作業者によ
る手作業または自動カット装置を使用し、この研磨布の
全周にわたり切除することで、テーパ面を形成してもよ
い。その他にも、例えば厚肉な研磨布を採用し、この研
磨布の研磨作用面の外周部をその全周にわたりカットし
て、テーパ面を形成してもよい。The method for forming the inclined surface on the outer peripheral portion of the polishing surface of the polishing cloth is not limited. For example, on the outer peripheral portion of the surface on which the polishing cloth of the polishing platen is spread, a taper surface is formed in which the polishing platen gradually becomes thinner as going outward in the radial direction of the polishing platen. For example, a method of extending the outer peripheral portion of the polishing cloth can be adopted. In this case, the outer peripheral portion of the surface of the polishing platen on which the polishing cloth is stretched is cut off over the entire circumference of the polishing cloth by using a manual operation or an automatic cutting device by an operator to form a tapered surface. Is also good. Alternatively, for example, a thick polishing cloth may be employed, and the outer peripheral portion of the polishing surface of the polishing cloth may be cut over the entire circumference to form a tapered surface.
【００１１】請求項２の発明は、上記テーパ面の傾斜角
度が、研磨作用面の中心部の平面を基準にして５〜３０
度である請求項１に記載の半導体ウェーハの研磨装置で
ある。According to a second aspect of the present invention, the inclination angle of the tapered surface is 5 to 30 with respect to the center plane of the polishing surface.
The semiconductor wafer polishing apparatus according to claim 1, wherein the degree is a degree.
【００１２】請求項３に記載の発明は、上記傾斜面と平
面とは曲面により連続する請求項１または請求項２に記
載の半導体ウェーハの研磨装置である。According to a third aspect of the present invention, there is provided the semiconductor wafer polishing apparatus according to the first or second aspect, wherein the inclined surface and the flat surface are continuous by a curved surface.
【００１３】請求項４に記載の発明は、研磨布が展張さ
れる研磨定盤と、この研磨定盤に対向配置され、半導体
ウェーハが保持された回転自在の研磨ヘッドとを備え、
上記研磨布の研磨作用面に、研磨剤を供給しながら、上
記研磨ヘッドにより回転中の半導体ウェーハを押し付け
て研磨する半導体ウェーハの研磨装置において、上記研
磨布の研磨作用面の大きさを、この研磨作用面の外周縁
が、研磨時のウェーハ回転軌跡の最外周円よりも半径方
向の内方に位置する大きさとし、上記研磨布の研磨作用
面の外周部には、その円周方向において研磨布の硬度に
差異を設けた半導体ウェーハの研磨装置である。According to a fourth aspect of the present invention, there is provided a polishing platen on which a polishing cloth is spread, and a rotatable polishing head disposed opposite to the polishing platen and holding a semiconductor wafer,
In a polishing apparatus for a semiconductor wafer which polishes by pressing a rotating semiconductor wafer by the polishing head while supplying an abrasive to the polishing surface of the polishing cloth, the size of the polishing surface of the polishing cloth is set to The outer peripheral edge of the polishing surface has a size located radially inward from the outermost circle of the wafer rotation trajectory during polishing, and the outer peripheral portion of the polishing surface of the polishing cloth is polished in the circumferential direction. This is a polishing apparatus for a semiconductor wafer in which the hardness of the cloth is different.
【００１４】請求項５に記載の発明は、研磨布が展張さ
れる研磨定盤と、この研磨定盤に対向配置され、半導体
ウェーハが保持された回転自在の研磨ヘッドとを備え、
上記研磨布の研磨作用面に、研磨剤を供給しながら、上
記研磨ヘッドにより回転中の半導体ウェーハを押し付け
て研磨する半導体ウェーハの研磨装置において、上記研
磨布の研磨作用面の大きさを、この研磨作用面の外周縁
が、研磨時のウェーハ回転軌跡の最外周円よりも半径方
向の内方に位置する大きさとし、上記研磨布の研磨作用
面の外周部には、その円周方向において研磨布の厚さに
差異を設けた半導体ウェーハの研磨装置である。According to a fifth aspect of the present invention, there is provided a polishing platen on which a polishing cloth is spread, and a rotatable polishing head disposed opposite to the polishing platen and holding a semiconductor wafer,
In a polishing apparatus for a semiconductor wafer which polishes by pressing a rotating semiconductor wafer by the polishing head while supplying an abrasive to the polishing surface of the polishing cloth, the size of the polishing surface of the polishing cloth is set to The outer peripheral edge of the polishing surface has a size located radially inward from the outermost circle of the wafer rotation trajectory during polishing, and the outer peripheral portion of the polishing surface of the polishing cloth is polished in the circumferential direction. This is a semiconductor wafer polishing apparatus in which a difference is provided in the thickness of the cloth.
【００１５】[0015]
【作用】この発明によれば、回転中の半導体ウェーハの
一部を研磨布の外部にはみ出しながら、その研磨面（通
常、ウェーハ表面）を研磨する。研磨中、例えば半導体
ウェーハの外周部は、その非研磨領域を通過しながら
（一部がはみ出して）研磨される。これにより、研磨布
の半導体ウェーハとの摺接面の全域において摩擦熱が均
一化することができる。その結果、ウェーハ平坦度が高
められる。そして、半導体ウェーハが研磨布の外部には
み出したとき、研磨布の外周縁と接触する半導体ウェー
ハの研磨面の一部に、研磨ヘッドからの圧力が集中す
る。しかしながら、この発明においては、研磨布の研磨
作用面の外周部に傾斜面が形成されているので、この部
分に作用する圧力は分散される。その結果、半導体ウェ
ーハの研磨面に傷の発生を防止することができる。According to the present invention, the polishing surface (usually, the wafer surface) is polished while a part of the rotating semiconductor wafer protrudes outside the polishing pad. During polishing, for example, the outer peripheral portion of the semiconductor wafer is polished while passing through the non-polishing region (partly protruding). Thereby, the frictional heat can be made uniform over the entire area of the surface of the polishing cloth that is in sliding contact with the semiconductor wafer. As a result, the wafer flatness is enhanced. Then, when the semiconductor wafer protrudes outside the polishing cloth, the pressure from the polishing head concentrates on a part of the polishing surface of the semiconductor wafer that comes into contact with the outer peripheral edge of the polishing cloth. However, in the present invention, since the inclined surface is formed on the outer peripheral portion of the polishing action surface of the polishing cloth, the pressure acting on this portion is dispersed. As a result, the occurrence of scratches on the polished surface of the semiconductor wafer can be prevented.
【００１６】特に、請求項２の発明によれば、研磨布の
研磨作用面の外周部の傾斜面の傾斜角度を５〜３０度と
したので、研磨ヘッドから半導体ウェーハの研磨面の一
部に作用する圧力を低減することができる。また、この
平坦な中心部と外周部の傾斜面とを所定の曲率の湾曲面
で連続することにより、傷の発生をより低減することが
できる。In particular, according to the second aspect of the present invention, the inclination angle of the inclined surface on the outer peripheral portion of the polishing surface of the polishing cloth is set to 5 to 30 degrees, so that the polishing head can be partially removed from the polishing surface of the semiconductor wafer. The working pressure can be reduced. In addition, since the flat central portion and the inclined surface of the outer peripheral portion are continuous with a curved surface having a predetermined curvature, the occurrence of scratches can be further reduced.
【００１７】また、その研磨布の外周部の硬度または厚
みに対して、円周方向において差異を設けることによ
り、この外周部による回転中の半導体ウェーハの外周部
への作用力を低減することができる。その結果としてウ
ェーハ研磨面での円周方向の傷の発生を防止することが
できる。Further, by providing a difference in the circumferential direction with respect to the hardness or thickness of the outer peripheral portion of the polishing pad, it is possible to reduce the acting force on the outer peripheral portion of the rotating semiconductor wafer due to the outer peripheral portion. it can. As a result, it is possible to prevent circumferential scratches on the polished surface of the wafer.
【００１８】[0018]
【発明の実施の形態】以下、この発明の実施例を図面を
参照して説明する。図１（ａ）は、この発明の一実施例
に係る半導体ウェーハの研磨装置の使用状態を示すその
正面図である。図１（ｂ）は、この発明の一実施例に係
る半導体ウェーハの研磨装置の使用状態を示すその要部
拡大正面図である。図１（ａ）において、１０は半導体
ウェーハの研磨装置であり、この研磨装置１０は、表面
に研磨布１１が展張された研磨定盤１２と、この上方に
配設された２台の研磨ヘッド１３とを備えている。２ヘ
ッド揺動式の研磨装置である。研磨布１１には、直径３
００〜６００ｍｍ、厚さ１ｍｍ以下の独立気泡型の硬質
ポリウレタンパッドを用いている。研磨ヘッド１３の下
面には、シリコンウェーハＷを固定するテンプレート１
４が設けられ、テンプレート１４の内側に、保水性を有
するバックパッド１５が収納されている。バックパッド
１５としては、不織布製のパッドが採用されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1A is a front view of a semiconductor wafer polishing apparatus according to an embodiment of the present invention, showing a use state of the apparatus. FIG. 1B is an enlarged front view of a main part of a semiconductor wafer polishing apparatus according to an embodiment of the present invention, showing a use state of the apparatus. In FIG. 1A, reference numeral 10 denotes a polishing apparatus for a semiconductor wafer. The polishing apparatus 10 includes a polishing platen 12 having a polishing cloth 11 spread on a surface thereof, and two polishing heads disposed above the polishing table 12. 13 is provided. This is a two-head swing type polishing apparatus. The polishing cloth 11 has a diameter of 3
A closed-cell hard polyurethane pad having a thickness of 00 to 600 mm and a thickness of 1 mm or less is used. A template 1 for fixing the silicon wafer W is provided on the lower surface of the polishing head 13.
4 is provided, and a back pad 15 having water retention is stored inside the template 14. As the back pad 15, a pad made of a nonwoven fabric is employed.
【００１９】この研磨装置１０の特長は、図１（ｂ）に
示すように、研磨布１１の表面（研磨作用面）の外周部
に、研磨布１１の半径方向外方へ向かうほど徐々に研磨
布１１が中心部の平坦面から離間するテーパ面１１ａを
形成した点である。このテーパ面１１ａの傾斜角度θ
は、研磨作用面（中心部の平坦面）を基準にして１０度
である。また、この平坦面とテーパ面とは丸みをつけて
連続させてもよい。このテーパ面１１ａの形成方法とし
ては、研磨定盤１２の上面の外周部に、研磨定盤１２の
半径方向外方へ向かうほど徐々に研磨定盤１２が薄肉化
するテーパ面１２ａを形成し、このテーパ面１２ａに、
研磨布１１の外周部を展張する方法が採用されている。
換言すると、研磨作用面は平面で形成された中心部と、
所定の傾斜面で形成された外周部とで構成されている。The feature of this polishing apparatus 10 is that, as shown in FIG. 1 (b), the polishing is gradually performed on the outer peripheral portion of the surface (polishing surface) of the polishing cloth 11 as the polishing cloth 11 moves outward in the radial direction. The point is that the cloth 11 forms a tapered surface 11a that is separated from the flat surface at the center. The inclination angle θ of this tapered surface 11a
Is 10 degrees with respect to the polishing surface (flat surface at the center). Also, the flat surface and the tapered surface may be rounded and continuous. As a method of forming the tapered surface 11a, a tapered surface 12a is formed on the outer peripheral portion of the upper surface of the polishing platen 12 such that the polishing platen 12 gradually becomes thinner toward the outside in the radial direction of the polishing platen 12, On this tapered surface 12a,
A method of extending the outer peripheral portion of the polishing cloth 11 is employed.
In other words, the polishing action surface has a central portion formed by a plane,
And an outer peripheral portion formed by a predetermined inclined surface.
【００２０】次に、この研磨装置１０を用いたシリコン
ウェーハＷの研磨方法を説明する。研磨時には、バック
パッド１５に純水を供給し、その表面張力によってシリ
コンウェーハＷを裏面側から保持する。その後、１００
〜３００ｇｆ／ｃｍ2 の圧力で、シリコンウェーハＷ
を、研磨定盤１２上に展張された研磨布１１の表面に押
し付ける。この状態を維持し、かつ研磨布１１上に研磨
剤を供給しながら、研磨定盤１２を所定の回転速度で回
転させる。しかも、この回転と同時に、一対の研磨ヘッ
ド１３のそれぞれを所定の回転速度で回転させつつ、こ
れらを所定の揺動速度、所定の圧力、所定の揺動幅で定
盤半径方向に向かって揺動させる。これにより、シリコ
ンウェーハＷの外周部が、研磨布１１の外部に所定のヘ
ッド位置変量（例えばシリコンウェーハＷの半分）では
み出しながら、ウェーハ表面の研磨面が所定時間だけ研
磨される。Next, a method for polishing a silicon wafer W using the polishing apparatus 10 will be described. At the time of polishing, pure water is supplied to the back pad 15, and the silicon wafer W is held from the back side by the surface tension. Then 100
Silicon wafer W at a pressure of ~ 300 gf / cm 2
Is pressed against the surface of the polishing cloth 11 spread on the polishing platen 12. While maintaining this state, and while supplying the abrasive onto the polishing pad 11, the polishing platen 12 is rotated at a predetermined rotation speed. In addition, simultaneously with this rotation, while rotating each of the pair of polishing heads 13 at a predetermined rotation speed, they are swung toward the surface plate radial direction at a predetermined swing speed, a predetermined pressure, and a predetermined swing width. Move. Thereby, the polished surface of the wafer is polished for a predetermined time while the outer peripheral portion of the silicon wafer W protrudes outside the polishing pad 11 by a predetermined head position variable (for example, half of the silicon wafer W).
【００２１】このような研磨を行うと、研磨中のウェー
ハ外周部は、シリコンウェーハＷが所定角度だけ回動す
るごとに、非研磨領域を通過しながら研磨される。これ
により、研磨布１１のシリコンウェーハＷとの摺接面の
全域において摩擦熱が均一化する。その結果、ウェーハ
平坦度が高められる。When such polishing is performed, the outer peripheral portion of the wafer being polished is polished while passing through the non-polishing region every time the silicon wafer W rotates by a predetermined angle. As a result, the frictional heat is made uniform over the entire area of the polishing surface of the polishing pad 11 in sliding contact with the silicon wafer W. As a result, the wafer flatness is enhanced.
【００２２】この研磨中、シリコンウェーハＷが研磨中
に研磨布１１の外部にはみ出した際に、研磨布１１の外
周縁と接するシリコンウェーハＷの研磨面の一部に、研
磨ヘッド１３から作用する圧力の集中が起こることがな
い。この実施例では研磨布１１の表面の外周部にテーパ
面１１ａが形成されているからである。そのため、研磨
面の一部に作用する研磨ヘッド１３の圧力は分散され
る。その結果、図２に示す従来の外周縁が直角断面の研
磨布１０１の場合よりも、シリコンウェーハＷの研磨面
に傷が付きにくい。よって、シリコンウェーハＷの不良
品の発生頻度が低下し、シリコンウェーハＷの収率を高
めることができる。しかも、研磨布１１のテーパ面１１
ａの傾斜角度は、研磨作用面を基準にして１０度であ
る。そのため、シリコンウェーハＷの研磨面の一部に作
用する圧力を、従来（直角の場合）よりも大幅に低減す
ることができる。During the polishing, when the silicon wafer W protrudes outside the polishing cloth 11 during the polishing, the polishing head 13 acts on a part of the polishing surface of the silicon wafer W which is in contact with the outer peripheral edge of the polishing cloth 11. No concentration of pressure occurs. This is because, in this embodiment, a tapered surface 11a is formed on the outer peripheral portion of the surface of the polishing pad 11. Therefore, the pressure of the polishing head 13 acting on a part of the polishing surface is dispersed. As a result, the polished surface of the silicon wafer W is less likely to be damaged than the conventional polishing cloth 101 whose outer peripheral edge shown in FIG. Therefore, the frequency of occurrence of defective products of the silicon wafer W is reduced, and the yield of the silicon wafer W can be increased. Moreover, the tapered surface 11 of the polishing cloth 11
The inclination angle of a is 10 degrees with respect to the polishing surface. Therefore, the pressure acting on a part of the polished surface of the silicon wafer W can be significantly reduced as compared with the conventional case (at right angles).
【００２３】なお、他の実施例としては以下の構成があ
る。すなわち、上記外周部に傾斜をつけることなく、研
磨布外周部の円周方向においてその硬度にばらつきを設
ける。硬度差により全体として中心部よりも研磨圧力を
低減するものである。この硬度差を設ける手段は問わな
い。さらに、研磨布の外周部において円周方向において
厚さに差を設けることも考えられる。例えば円周方向に
おいて４等分して厚い部分とこれより薄い部分とを交互
に設ける。その結果として、研磨布の外周部の研磨圧力
を中心部のそれよりも低減することができる。よって、
シリコンウェーハ研磨面への円周方向傷の発生を低減す
ることができる。Incidentally, there is the following configuration as another embodiment. That is, the hardness is provided in the circumferential direction of the outer peripheral portion of the polishing pad without making the outer peripheral portion inclined. The polishing pressure is reduced as a whole from the central part due to the difference in hardness. Means for providing this hardness difference is not limited. Furthermore, it is conceivable to provide a difference in thickness in the circumferential direction at the outer peripheral portion of the polishing cloth. For example, a thick part and a thinner part are alternately provided by dividing into four in the circumferential direction. As a result, the polishing pressure at the outer peripheral portion of the polishing pad can be made lower than that at the central portion. Therefore,
The generation of circumferential scratches on the polished surface of the silicon wafer can be reduced.
【００２４】[0024]
【発明の効果】この発明によれば、研磨布の研磨作用面
の外周部の研磨圧力を中心部のそれより低減したため、
研磨時、半導体ウェーハが研磨布の外部にはみ出した
際、研磨布の外周縁と接触する半導体ウェーハの研磨面
の一部に作用する研磨ヘッドから圧力の集中を防ぐこと
ができる。その結果、半導体ウェーハの研磨面に傷が付
きにくい。According to the present invention, the polishing pressure at the outer peripheral portion of the polishing surface of the polishing cloth is reduced as compared with that at the central portion.
During polishing, when the semiconductor wafer protrudes outside the polishing pad, concentration of pressure from the polishing head acting on a part of the polishing surface of the semiconductor wafer in contact with the outer peripheral edge of the polishing pad can be prevented. As a result, the polished surface of the semiconductor wafer is hardly damaged.
【図１】（ａ）は、この発明の一実施例に係る半導体ウ
ェーハの研磨装置の使用時の状態を示すその正面図であ
る。（ｂ）は、この発明の一実施例に係る半導体ウェー
ハの研磨装置の使用状態を示すその要部拡大正面図であ
る。FIG. 1A is a front view showing a state when a semiconductor wafer polishing apparatus according to an embodiment of the present invention is used. FIG. 2B is an enlarged front view of a main part of the semiconductor wafer polishing apparatus according to the embodiment of the present invention, showing a use state of the apparatus.
【図２】（ａ）は、従来手段に係る半導体ウェーハの研
磨装置の使用状態の正面図である。（ｂ）は、従来手段
に係る半導体ウェーハの研磨装置の主要部を示す図であ
る。FIG. 2A is a front view of a semiconductor wafer polishing apparatus according to a conventional means in use. FIG. 2B is a view showing a main part of a semiconductor wafer polishing apparatus according to a conventional means.
１０ 半導体ウェーハの研磨装置、 １１ａ テーパ面、 １１ 研磨布、 １２ 研磨定盤、 １３ 研磨ヘッド、 Ｗ シリコンウェーハ（半導体ウェーハ）、 θ 傾斜角度。 Reference Signs List 10 polishing device for semiconductor wafer, 11a tapered surface, 11 polishing cloth, 12 polishing platen, 13 polishing head, W silicon wafer (semiconductor wafer), θ tilt angle.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小林 芳樹 埼玉県入間市中神508−２ 株式会社ゼビ オス内 (72)発明者 原田 晴司 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 (72)発明者 伝田 正 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 Ｆターム(参考） 3C058 AA07 AA09 CB06 DA17 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshiki Kobayashi 508-2 Nakagami, Iruma-shi, Saitama Prefecture Xevi Male Co., Ltd. (72) Inventor Haruji Haruji 1-5-1 Otemachi, Chiyoda-ku, Tokyo Mitsuhishi Material Silicon Co., Ltd. (72) Inventor Tadashi Denda 1-5-1, Otemachi, Chiyoda-ku, Tokyo Mitsubishi Material Silicon Co., Ltd. F-term (reference) 3C058 AA07 AA09 CB06 DA17
Claims (5)
れた回転自在の研磨ヘッドとを備え、 上記研磨布の研磨作用面に、研磨剤を供給しながら、上
記研磨ヘッドにより回転中の半導体ウェーハを押し付け
て研磨する半導体ウェーハの研磨装置において、 上記研磨布の研磨作用面の大きさを、この研磨作用面の
外周縁が、研磨時のウェーハ回転軌跡の最外周円よりも
半径方向の内方に位置する大きさとし、 上記研磨布の研磨作用面を平面で形成された中心部とそ
の外周部とに区分し、この外周部には、この研磨布の半
径方向外方へ向かうほど上記平面より徐々に離隔する傾
斜面が形成された半導体ウェーハの研磨装置。1. A polishing table, on which a polishing cloth is spread, and a rotatable polishing head disposed opposite to the polishing table and holding a semiconductor wafer, wherein a polishing surface of the polishing cloth is polished. In a semiconductor wafer polishing apparatus for polishing by pressing a rotating semiconductor wafer by the polishing head while supplying an agent, the size of the polishing surface of the polishing cloth is determined by the outer peripheral edge of the polishing surface. The size is located radially inward of the outermost circle of the wafer rotation trajectory, and the polishing surface of the polishing cloth is divided into a central portion formed as a plane and its outer peripheral portion. An apparatus for polishing a semiconductor wafer, wherein an inclined surface which is gradually separated from the above-mentioned plane as it goes radially outward of the polishing cloth is formed.
中心部の平面を基準にして５〜３０度である請求項１に
記載の半導体ウェーハの研磨装置。2. The semiconductor wafer polishing apparatus according to claim 1, wherein an inclination angle of the inclined surface is 5 to 30 degrees with respect to a plane of a central portion of the polishing surface.
る請求項１または請求項２に記載の半導体ウェーハの研
磨装置。3. The apparatus for polishing a semiconductor wafer according to claim 1, wherein the inclined surface and the flat surface are continuous by a curved surface.
れた回転自在の研磨ヘッドとを備え、 上記研磨布の研磨作用面に、研磨剤を供給しながら、上
記研磨ヘッドにより回転中の半導体ウェーハを押し付け
て研磨する半導体ウェーハの研磨装置において、 上記研磨布の研磨作用面の大きさを、この研磨作用面の
外周縁が、研磨時のウェーハ回転軌跡の最外周円よりも
半径方向の内方に位置する大きさとし、 上記研磨布の研磨作用面の外周部には、その円周方向に
おいて研磨布の硬度に差異を設けた半導体ウェーハの研
磨装置。4. A polishing table on which a polishing cloth is spread, and a rotatable polishing head disposed opposite to the polishing table and holding a semiconductor wafer, wherein a polishing surface of the polishing cloth is polished. In a semiconductor wafer polishing apparatus for polishing by pressing a rotating semiconductor wafer by the polishing head while supplying an agent, the size of the polishing surface of the polishing cloth is determined by the outer peripheral edge of the polishing surface. A semiconductor wafer having a size located radially inward of the outermost circumference circle of the wafer rotation trajectory, and having a difference in the hardness of the polishing cloth in the circumferential direction on the outer circumference of the polishing action surface of the polishing cloth. Polishing equipment.
れた回転自在の研磨ヘッドとを備え、 上記研磨布の研磨作用面に、研磨剤を供給しながら、上
記研磨ヘッドにより回転中の半導体ウェーハを押し付け
て研磨する半導体ウェーハの研磨装置において、 上記研磨布の研磨作用面の大きさを、この研磨作用面の
外周縁が、研磨時のウェーハ回転軌跡の最外周円よりも
半径方向の内方に位置する大きさとし、 上記研磨布の研磨作用面の外周部には、その円周方向に
おいて研磨布の厚さに差異を設けた半導体ウェーハの研
磨装置。5. A polishing table on which a polishing cloth is spread, and a rotatable polishing head disposed opposite to the polishing table and holding a semiconductor wafer, wherein a polishing surface of the polishing cloth is polished. In a semiconductor wafer polishing apparatus for polishing by pressing a rotating semiconductor wafer by the polishing head while supplying an agent, the size of the polishing surface of the polishing cloth is determined by the outer peripheral edge of the polishing surface. A semiconductor having a size located radially inward of the outermost circumference circle of the wafer rotation trajectory and having a difference in the thickness of the polishing cloth in the circumferential direction on the outer circumference of the polishing action surface of the polishing cloth. Wafer polishing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001050502A JP2002252191A (en) | 2001-02-26 | 2001-02-26 | Polishing equipment for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001050502A JP2002252191A (en) | 2001-02-26 | 2001-02-26 | Polishing equipment for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002252191A true JP2002252191A (en) | 2002-09-06 |
Family
ID=18911444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001050502A Pending JP2002252191A (en) | 2001-02-26 | 2001-02-26 | Polishing equipment for semiconductor wafer |
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| Country | Link |
|---|---|
| JP (1) | JP2002252191A (en) |
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|---|---|---|---|---|
| JP2005322926A (en) * | 2004-05-07 | 2005-11-17 | Soc Europeenne De Systemes Optiques | Method for polishing surface and polishing element |
| JP2006196836A (en) * | 2005-01-17 | 2006-07-27 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| JP2009220265A (en) * | 2008-02-18 | 2009-10-01 | Jsr Corp | Chemical machinery polishing pad |
| WO2012132073A1 (en) * | 2011-03-29 | 2012-10-04 | コニカミノルタアドバンストレイヤー株式会社 | Method for manufacturing glass substrate for information recording medium, and information recording medium |
| JP2013533125A (en) * | 2010-06-15 | 2013-08-22 | スリーエム イノベイティブ プロパティズ カンパニー | Bonding technique for fixed abrasives used for chemical mechanical planarization |
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2001
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005322926A (en) * | 2004-05-07 | 2005-11-17 | Soc Europeenne De Systemes Optiques | Method for polishing surface and polishing element |
| JP2006196836A (en) * | 2005-01-17 | 2006-07-27 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| JP4681304B2 (en) * | 2005-01-17 | 2011-05-11 | 東洋ゴム工業株式会社 | Laminated polishing pad |
| JP2009220265A (en) * | 2008-02-18 | 2009-10-01 | Jsr Corp | Chemical machinery polishing pad |
| JP2013533125A (en) * | 2010-06-15 | 2013-08-22 | スリーエム イノベイティブ プロパティズ カンパニー | Bonding technique for fixed abrasives used for chemical mechanical planarization |
| WO2012132073A1 (en) * | 2011-03-29 | 2012-10-04 | コニカミノルタアドバンストレイヤー株式会社 | Method for manufacturing glass substrate for information recording medium, and information recording medium |
| JPWO2012132073A1 (en) * | 2011-03-29 | 2014-07-24 | Hoya株式会社 | Method for manufacturing glass substrate for information recording medium and information recording medium |
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