JP2006295011A - Package for mounting light-emitting element - Google Patents

Package for mounting light-emitting element Download PDF

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JP2006295011A
JP2006295011A JP2005116369A JP2005116369A JP2006295011A JP 2006295011 A JP2006295011 A JP 2006295011A JP 2005116369 A JP2005116369 A JP 2005116369A JP 2005116369 A JP2005116369 A JP 2005116369A JP 2006295011 A JP2006295011 A JP 2006295011A
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plating layer
layer
emitting element
package
nickel plating
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JP2005116369A
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Japanese (ja)
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Takahiko Honda
貴彦 本田
Koichi Nakasu
浩一 中洲
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Sumitomo Metal SMI Electronics Device Inc
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Sumitomo Metal SMI Electronics Device Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a package for mounting a light-emitting element, which package improves the gloss of a light reflection surface, by a simple method. <P>SOLUTION: A package body 11 is formed of a high-temperature baked ceramics, such as alumina and aluminum nitride, and has a cavity 13. A substrate metalized layer 18 made of such a metal showing a high melting point as tungsten and molybdenum is baked on the peripheral side face of the cavity 13 simultaneously with the package body 11. Subsequently, a gloss nickel plating layer 19 is formed on the substrate metalized layer 18, and a gloss silver plating layer 20 is further formed on the gloss nickel plating layer 19, where the surface of the silver plating layer 20 serves as a light reflection surface 21. In forming the gloss nickel plating layer 19 and the silver plating layer 20, a conventional plating method is employed except a process of adding a brightener to a nickel plating solution and to a silver plating solution. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光素子を搭載するためのキャビティの周側面を発光素子の光を外側に向けて反射する光反射面として用いる発光素子搭載用パッケージに関する発明である。   The present invention relates to a light emitting element mounting package that uses a peripheral side surface of a cavity for mounting a light emitting element as a light reflecting surface that reflects light of the light emitting element toward the outside.

例えば、特許文献１（特開２００４−２０７６７２号公報）に記載された発光素子搭載用パッケージは、図３に示すように、アルミナ基板１の上面側に形成されたキャビティ２内に発光素子３を搭載し、キャビティ２の周側面に、発光素子３の光を外側に向けて反射する光反射面４を形成した構成となっている。この場合、光反射面４には、タングステン及びモリブデンを含む下地メタライズ層５をアルミナ基板１と同時焼成し、この下地メタライズ層５上にニッケルめっき層６を介して銀めっき層７を形成することで、光反射面４となる銀めっき層７が剥離しにくい構成となっている。この特許文献１には、銀めっき層７の表面の平均粗さは１〜３μｍが好ましく、光反射率は８０％以上が好ましいと記載されているが（段落［００３５］〜［００３６］参照）、これらの条件を達成する具体的な形成方法は記載されていない。   For example, in the light emitting element mounting package described in Patent Document 1 (Japanese Patent Laid-Open No. 2004-207672), the light emitting element 3 is placed in the cavity 2 formed on the upper surface side of the alumina substrate 1 as shown in FIG. The light reflection surface 4 which mounts and reflects the light of the light emitting element 3 toward the outer side is formed on the peripheral side surface of the cavity 2. In this case, an underlying metallized layer 5 containing tungsten and molybdenum is simultaneously fired on the light reflecting surface 4 together with the alumina substrate 1, and a silver plated layer 7 is formed on the underlying metallized layer 5 via a nickel plated layer 6. Thus, the silver plating layer 7 to be the light reflecting surface 4 is configured to be difficult to peel off. This Patent Document 1 describes that the average roughness of the surface of the silver plating layer 7 is preferably 1 to 3 μm, and the light reflectance is preferably 80% or more (see paragraphs [0035] to [0036]). However, a specific formation method for achieving these conditions is not described.

また、特許文献２（特開２００２−２３２０１７号公報）には、アルミナ基板と同時焼成したキャビティ周側面の下地メタライズ層の上に、ニッケルや金・白金・パラジウム等のめっき層を形成して、このめっき層の表面を光反射面とすることが記載されている（段落［００３３］参照）。この特許文献２にも、めっき層の表面の平均粗さは１〜３μｍが好ましく、光反射率は８０％以上が好ましいと記載されており（段落［００３４］参照）、更に、これらの条件を達成するために、アルミナ基板のキャビティ周側面を形成するセラミックグリーンシートの貫通穴内壁の平均粗さを４〜１０μｍとし（段落［００３０］参照）、下地メタライズ層の平均粗さを３〜６μｍとすると共に、この下地メタライズ層上に形成するめっき層の厚みを１〜１３μｍとすることが記載されている（段落［００３４］参照）。
特開２００４−２０７６７２号公報（第１頁、第７頁等） 特開２００２−２３２０１７号公報（第１頁、第５頁等） Further, in Patent Document 2 (Japanese Patent Application Laid-Open No. 2002-232017), a plating layer of nickel, gold, platinum, palladium, or the like is formed on the base metallization layer on the cavity peripheral side surface that is co-fired with the alumina substrate, It is described that the surface of the plating layer is a light reflecting surface (see paragraph [0033]). This Patent Document 2 also describes that the average roughness of the surface of the plating layer is preferably 1 to 3 μm, and the light reflectance is preferably 80% or more (see paragraph [0034]). In order to achieve this, the average roughness of the inner wall of the through hole of the ceramic green sheet forming the cavity side surface of the alumina substrate is 4 to 10 μm (see paragraph [0030]), and the average roughness of the base metallization layer is 3 to 6 μm. In addition, it is described that the thickness of the plating layer formed on the base metallized layer is 1 to 13 μm (see paragraph [0034]).
JP-A-2004-207672 (first page, seventh page, etc.) JP 2002-232017 (first page, fifth page, etc.)

ところで、上記特許文献２では、セラミックグリーンシートの貫通穴内壁の平均粗さを４〜１０μｍ、下地メタライズ層の平均粗さを３〜６μｍ、めっき層の厚みを１〜１３μｍとすることで、めっき層の表面の平均粗さを１〜３μｍ、光反射率を８０％以上とするようにしているが、この方法では、セラミックグリーンシートの貫通穴内壁の平均粗さ、下地メタライズ層の平均粗さ及びめっき層の厚みを全て厳格に管理する必要があるため、生産管理に手間がかかって、製造コストが高くなるという欠点がある。   By the way, in the said patent document 2, plating is carried out by setting the average roughness of the inner wall of the through hole of the ceramic green sheet to 4 to 10 μm, the average roughness of the base metallization layer to 3 to 6 μm, and the thickness of the plating layer to 1 to 13 μm. The average roughness of the surface of the layer is 1 to 3 μm and the light reflectance is 80% or more. In this method, the average roughness of the inner wall of the through hole of the ceramic green sheet, the average roughness of the underlying metallized layer In addition, since it is necessary to strictly manage the thickness of the plating layer, there is a disadvantage that production management takes time and manufacturing costs are increased.

しかも、光反射面表層のめっき層を、光反射率が高いと言われている銀めっきで形成した場合でも、めっき層表面の光沢度が不足して、実際には光反射率を大きく向上させることは困難である。   Moreover, even when the plating layer on the surface of the light reflecting surface is formed by silver plating, which is said to have a high light reflectance, the glossiness of the plating layer surface is insufficient, and the light reflectance is actually greatly improved. It is difficult.

本発明はこのような事情を考慮してなされたものであり、従ってその目的は、光反射面の光沢度を高めた発光素子搭載用パッケージを簡単な方法で製造できるようにすることである。   The present invention has been made in view of such circumstances. Accordingly, an object of the present invention is to make it possible to manufacture a light-emitting element mounting package in which the glossiness of the light reflecting surface is increased by a simple method.

ところで、光反射面表層のめっき層の光沢度を高めるために、表層のめっき層を光沢度の高い光沢銀めっきで形成することが考えられる。しかし、表層のめっき層を光沢銀めっき層としただけでは、その下地のニッケルめっき層の凹凸のために光沢銀めっき層の表面にも凹凸ができてしまい、それほど高い光沢度とはならない。   By the way, in order to increase the glossiness of the plating layer on the surface of the light reflecting surface, it is conceivable to form the plating layer on the surface layer by glossy silver plating having a high glossiness. However, if only the surface plating layer is a bright silver plating layer, the surface of the bright silver plating layer is uneven due to the unevenness of the underlying nickel plating layer, and the glossiness is not so high.

そこで、請求項１に係る発明は、発光素子搭載用パッケージの光反射面に、光沢ニッケルめっき層を下地とし、その上に光沢銀めっき層を形成した構成としたものである。このように、表層の銀めっき層とその下地のニッケルめっき層の両方を光沢めっきで形成すれば、下地の光沢ニッケルめっき層は、凹凸の小さい下地めっき層となるため、その上に形成する光沢銀めっき層の凹凸が小さくなり、光沢度の高い光反射面を形成することができる。しかも、光沢ニッケルめっき層と光沢銀めっき層の形成方法は、ニッケルめっき液と銀めっき液にそれぞれ光沢剤を添加するだけで、それ以外は従来と同じめっき処理方法を用いれば良いため、製造方法も簡単であり、低コスト化の要求も満たすことができる。   Therefore, the invention according to claim 1 is configured such that the bright nickel plating layer is formed on the light reflecting surface of the light emitting element mounting package, and the bright silver plating layer is formed thereon. In this way, if both the surface silver plating layer and the underlying nickel plating layer are formed by bright plating, the underlying bright nickel plating layer becomes an underlying plating layer with small irregularities. The unevenness of the silver plating layer is reduced, and a light reflecting surface with high glossiness can be formed. In addition, the bright nickel plating layer and the bright silver plating layer can be formed by adding a brightening agent to the nickel plating solution and the silver plating solution, respectively. It is simple and can meet the demand for cost reduction.

本発明は、パッケージ本体を１０００℃以下で焼成する低温焼成セラミックで形成した発光素子搭載用パッケージに適用することも可能であるが、請求項２のように、パッケージ本体を、アルミナ、窒化アルミニウム等の高温焼成セラミックで形成し、前記キャビティの周側面に、タングステン、モリブデン等の高融点金属よりなる下地メタライズ層を前記パッケージ本体と同時焼成し、この下地メタライズ層の上に光沢ニッケルめっき層を介して光沢銀めっき層を形成するようにしても良い。このようにすれば、パッケージ本体（セラミック）と下地メタライズ層と光沢ニッケルめっき層と光沢銀めっき層との間の接合強度が強くなり、パッケージ本体に搭載した発光素子を透明樹脂で封止する工程で、光沢銀めっき層や光沢ニッケルめっき層が剥離することを防止することができる。   The present invention can also be applied to a light emitting element mounting package formed of a low-temperature fired ceramic that fires the package body at 1000 ° C. or lower. As in claim 2, the package body is made of alumina, aluminum nitride, or the like. A base metallization layer made of a refractory metal such as tungsten or molybdenum is simultaneously fired on the peripheral side surface of the cavity with the package body, and a bright nickel plating layer is interposed on the base metallization layer. A bright silver plating layer may be formed. In this way, the bonding strength between the package body (ceramic), the underlying metallized layer, the bright nickel plating layer, and the bright silver plating layer is increased, and the light emitting element mounted on the package body is sealed with a transparent resin. Thus, peeling of the bright silver plating layer and the bright nickel plating layer can be prevented.

以下、本発明の一実施例を図面に基づいて説明する。図１は、パッケージ本体１１に発光素子１２を搭載するためのキャビティ１３を１個のみ形成した発光素子搭載用パッケージの構成例であり、図２は、パッケージ本体１１に発光素子１２を搭載するためのキャビティ１３を複数個形成した発光素子搭載用パッケージの構成例である。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a configuration example of a light emitting element mounting package in which only one cavity 13 for mounting the light emitting element 12 on the package body 11 is formed. FIG. 2 is a diagram for mounting the light emitting element 12 on the package body 11. This is a configuration example of a light emitting element mounting package in which a plurality of cavities 13 are formed.

パッケージ本体１１は、例えば複数のセラミック層１１ａ〜１１ｃ（セラミックグリーンシート）を積層して焼成一体化した多層セラミック基板により構成され、その最上層のセラミック層１１ａに形成した貫通穴によってキャビティ１３が形成されている。各セラミック層１１ａ〜１１ｃは、アルミナ、窒化アルミニウム等の１０００℃以上で焼成する高温焼成セラミックで形成され、キャビティ１３の周側面は、発光素子１２の光を外側に向けて反射する光反射面２１を形成するために、外側に向けて拡開するように形成されている。   The package body 11 is constituted by a multilayer ceramic substrate in which, for example, a plurality of ceramic layers 11a to 11c (ceramic green sheets) are laminated and fired and integrated, and a cavity 13 is formed by a through hole formed in the uppermost ceramic layer 11a. Has been. Each of the ceramic layers 11a to 11c is formed of a high-temperature fired ceramic such as alumina or aluminum nitride that is fired at 1000 ° C. or higher, and the peripheral side surface of the cavity 13 reflects the light of the light emitting element 12 toward the outside. Is formed so as to expand outward.

キャビティ１３の底面となる部分には、発光素子１２をボンディングワイヤ１４で接続するためのパッド１５が形成され、各セラミック層１１ｂ，１１ｃには、層間を電気的に接続するビア１６と配線パターン１７がタングステン、モリブデン等の高融点金属導体ペーストにより印刷焼成されている。   A pad 15 for connecting the light emitting element 12 with a bonding wire 14 is formed on the bottom surface of the cavity 13, and vias 16 and wiring patterns 17 for electrically connecting the layers are formed on each ceramic layer 11b and 11c. Is printed and fired with a refractory metal conductor paste such as tungsten or molybdenum.

キャビティ１３の周側面には、タングステン、モリブデン等の高融点金属よりなる下地メタライズ層１８がパッケージ本体１１と同時焼成され、この下地メタライズ層１８の上に光沢ニッケルめっき層１９が形成され、この光沢ニッケルめっき層１９の上に光沢銀めっき層２０が形成され、この光沢銀めっき層２０の表面が光反射面２１となっている。   On the peripheral side surface of the cavity 13, a base metallized layer 18 made of a refractory metal such as tungsten or molybdenum is simultaneously fired with the package body 11, and a bright nickel plating layer 19 is formed on the base metallized layer 18. A bright silver plating layer 20 is formed on the nickel plating layer 19, and the surface of the bright silver plating layer 20 is a light reflecting surface 21.

この場合、光沢ニッケルめっき層１９の厚みは、光沢銀めっき層２０との接合強度を確保するために１〜８μｍとすることが望ましい。また、光沢銀めっき層２０の厚みが薄すぎると、下地のニッケルが光沢銀めっき層２０表面に浸透して光沢銀めっき層２０表面（光反射面２１）が変色するため、光沢銀めっき層２０の厚みは、２．５μｍ以上とすることが望ましい。   In this case, the thickness of the bright nickel plating layer 19 is desirably 1 to 8 μm in order to ensure the bonding strength with the bright silver plating layer 20. If the thickness of the bright silver plating layer 20 is too thin, the underlying nickel penetrates into the surface of the bright silver plating layer 20 and the surface of the bright silver plating layer 20 (light reflecting surface 21) changes color. The thickness of is preferably 2.5 μm or more.

以上のように構成した発光素子搭載用パッケージを製造する場合は、焼成前の各セラミック層１１ａ〜１１ｃ（セラミックグリーンシート）に、それぞれ下地メタライズ層１８、ビア１６、配線パターン１７をタングステン、モリブデン等の高融点金属の導体ペーストで印刷した後、各セラミック層１１ａ〜１１ｃを積層・圧着して一体化し、これを高温焼成セラミックの焼結温度で焼成する。これにより、パッケージ本体１１と下地メタライズ層１８、ビア１６、配線パターン１７を同時焼成する。   In the case of manufacturing the light emitting element mounting package configured as described above, the base metallized layer 18, the via 16, and the wiring pattern 17 are respectively formed on the ceramic layers 11 a to 11 c (ceramic green sheets) before firing. Then, the ceramic layers 11a to 11c are laminated and pressed to be integrated, and fired at the sintering temperature of the high-temperature fired ceramic. As a result, the package body 11, the base metallized layer 18, the via 16, and the wiring pattern 17 are fired simultaneously.

この後、光沢ニッケルめっき行程に進み、光沢剤を添加したニッケルめっき液を用いて電解めっき法又は無電解めっき法によりキャビティ１３の周側面の下地メタライズ層１８上に１〜８μｍの厚みの光沢ニッケルめっき層１９を形成する。   Thereafter, the process proceeds to a bright nickel plating step, and a bright nickel having a thickness of 1 to 8 μm is formed on the underlying metallized layer 18 on the peripheral side surface of the cavity 13 by an electrolytic plating method or an electroless plating method using a nickel plating solution to which a brightener is added. A plating layer 19 is formed.

この後、光沢銀めっき行程に進み、光沢剤を添加した銀めっき液を用いて、電解めっき法又は無電解めっき法により、キャビティ１３の周側面の光沢ニッケルめっき層１９上に２．５μｍ以上の厚みの光沢銀めっき層２０を形成する。この光沢銀めっき層２０の表面が光反射面２１となる。   Thereafter, the process proceeds to a bright silver plating step, and a silver plating solution to which a brightening agent is added is used to deposit 2.5 μm or more on the bright nickel plating layer 19 on the peripheral side surface of the cavity 13 by electrolytic plating or electroless plating. A bright silver plating layer 20 having a thickness is formed. The surface of the bright silver plating layer 20 becomes the light reflecting surface 21.

本発明者らは、本実施例のパッケージの光反射面２１の光沢度を評価するために、比較例として、下地メタライズ層の上に、光沢剤無しの普通の下地ニッケルめっき層を形成し、この下地ニッケルめっき層の上に光沢銀めっき層を形成したパッケージを作製した。そして、本実施例と比較例のパッケージの光沢銀めっき層の表面（光反射面）の光沢度を計測したところ、比較例では、光沢度が０．６であったのに対して、本実施例では、光沢度が１．０であり、比較例よりも各段に高い光沢度が得られた。また、下地ニッケルめっき層表面の光沢度を計測したところ、比較例の下地ニッケルめっき層は、光沢剤無しであるため、光沢度が０．１という非常に低い数値であったのに対して、本実施例では、光沢ニッケルめっきを用いているため、光沢度が比較例よりも各段に高い０．５であった。   In order to evaluate the glossiness of the light reflecting surface 21 of the package of this example, the present inventors formed an ordinary base nickel plating layer without a brightener on the base metallized layer as a comparative example, A package was produced in which a bright silver plating layer was formed on the underlying nickel plating layer. And when the glossiness of the surface (light reflecting surface) of the glossy silver plating layer of the package of this example and the comparative example was measured, the glossiness was 0.6 in the comparative example. In the example, the glossiness was 1.0, and higher glossiness was obtained in each stage than in the comparative example. Further, when the glossiness of the surface of the base nickel plating layer was measured, the base nickel plating layer of the comparative example had no brightener, so the glossiness was a very low value of 0.1, In this example, since bright nickel plating was used, the glossiness was 0.5 higher than that of the comparative example.

ここで、光沢度は、次式で定義される。
光沢度＝２−ｌｏｇ10（反射率）
反射率＝反射光量／入射光量
但し、反射率は、入射光に対して４５°方向への反射率である。光沢度の計測器は、日本電色工業社製のデンシトメーター「ＮＤ１０」を使用した。 Here, the glossiness is defined by the following equation.
Glossiness = 2-log 10 (reflectance)
Reflectivity = amount of reflected light / amount of incident light However, the reflectance is a reflectance in a 45 ° direction with respect to incident light. The densitometer “ND10” manufactured by Nippon Denshoku Industries Co., Ltd. was used as the glossiness measuring instrument.

この試験結果から、下地ニッケルめっき層の光沢度の影響がその上の銀めっき層の光沢度に大きく現れることが容易に推測できる。一般に、めっき層表面の凹凸が大きくなるほど、光沢度が低くなるという関係があることを考慮すると、比較例の光沢剤無しの下地ニッケルめっき層は、光沢度が０．１という非常に低い数値であることから、表面の凹凸がかなり大きいものと推測できる。このため、比較例のように、光沢剤無しの下地ニッケルめっき層の上に光沢銀めっき層を形成しても、その下地ニッケルめっき層の凹凸のために光沢銀めっき層の表面にも凹凸ができてしまい、光沢度が０．６程度にしかならず、それほど高い光沢度とはならない。   From this test result, it can be easily estimated that the influence of the glossiness of the underlying nickel plating layer appears greatly in the glossiness of the silver plating layer thereon. In general, considering that there is a relationship that the unevenness of the plating layer surface increases and the glossiness decreases, the base nickel plating layer without the brightener of the comparative example has a very low numerical value of 0.1. From this, it can be assumed that the unevenness of the surface is quite large. For this reason, even if the bright silver plating layer is formed on the base nickel plating layer without the brightener as in the comparative example, the surface of the bright silver plating layer is uneven due to the unevenness of the base nickel plating layer. As a result, the glossiness is only about 0.6, and the glossiness is not so high.

これに対して、本実施例では、下地ニッケルめっき層１９も、その上の銀めっき層２０と同じく、光沢めっきで形成しているので、下地の光沢ニッケルめっき層１９は、光沢度が比較例よりも各段に高い０．５となり、比較例よりも明らかに凹凸の小さい下地めっき層となる。このため、下地の光沢ニッケルめっき層１９の上に形成する光沢銀めっき層２０表面の凹凸も小さくなり、光沢度が１．０という非常に高い光沢度の光反射面２１を形成することができる。しかも、光沢ニッケルめっき層１９と光沢銀めっき層２０の形成方法は、ニッケルめっき液と銀めっき液にそれぞれ光沢剤を添加するだけで、それ以外は従来と同じめっき処理方法を用いれば良いため、製造方法も簡単であり、低コスト化の要求も満たすことができる。   On the other hand, in this embodiment, the underlying nickel plating layer 19 is also formed by bright plating like the silver plating layer 20 thereabove, so that the underlying bright nickel plating layer 19 has a glossiness of the comparative example. In other words, it is 0.5, which is higher than that in each step. For this reason, the unevenness of the surface of the bright silver plating layer 20 formed on the underlying bright nickel plating layer 19 is also reduced, and the light reflecting surface 21 having a very high glossiness of 1.0 can be formed. . Moreover, the bright nickel plating layer 19 and the bright silver plating layer 20 can be formed by simply adding a brightening agent to the nickel plating solution and the silver plating solution, respectively. The manufacturing method is simple, and the demand for cost reduction can be satisfied.

しかも、パッケージ本体１１のキャビティ１３の周側面に下地メタライズ層１８を同時焼成し、この下地メタライズ層１８の上に光沢ニッケルめっき層１９を介して光沢銀めっき層２０を形成するようにしたので、パッケージ本体１１（セラミック）と下地メタライズ層１８と光沢ニッケルめっき層１９と光沢銀めっき層２０との間の接合強度が強くなり、パッケージ本体１１に搭載した発光素子１２を透明樹脂で封止する工程で、光沢銀めっき層２０や光沢ニッケルめっき層１９が剥離することを防止することができる利点もある。   Moreover, since the base metallized layer 18 is simultaneously fired on the peripheral side surface of the cavity 13 of the package body 11 and the bright silver plated layer 20 is formed on the base metallized layer 18 via the bright nickel plated layer 19, The bonding strength among the package body 11 (ceramic), the base metallized layer 18, the bright nickel plating layer 19 and the bright silver plating layer 20 is increased, and the light emitting element 12 mounted on the package body 11 is sealed with a transparent resin. Thus, there is also an advantage that the bright silver plating layer 20 and the bright nickel plating layer 19 can be prevented from peeling off.

尚、図１及び図２のパッケージ構成例では、キャビティ１３の周側面のみに光反射面２１を形成したが、キャビティ１３の底面に跨がって光反射面２１を形成したり、キャビティ１３の周側面の一部に光反射面２１を形成しない部分があっても良い。   1 and 2, the light reflection surface 21 is formed only on the peripheral side surface of the cavity 13, but the light reflection surface 21 is formed across the bottom surface of the cavity 13, There may be a portion where the light reflecting surface 21 is not formed on a part of the peripheral side surface.

その他、本発明は、パッケージ本体を１０００℃以下で焼成する低温焼成セラミックで形成した発光素子搭載用パッケージに適用することも可能である等、種々変形して実施できることは言うまでもない。   In addition, it goes without saying that the present invention can be implemented in various modifications, such as being applicable to a light emitting element mounting package formed of a low temperature fired ceramic in which the package body is fired at 1000 ° C. or lower.

本発明の一実施例における発光素子搭載用パッケージの構成例（その１）を示す縦断面図である。It is a longitudinal cross-sectional view which shows the structural example (the 1) of the light emitting element mounting package in one Example of this invention. 本発明の一実施例における発光素子搭載用パッケージの構成例（その２）を示す縦断面図である。It is a longitudinal cross-sectional view which shows the structural example (the 2) of the light emitting element mounting package in one Example of this invention. 従来の発光素子搭載用パッケージの構成を示す縦断面図である。It is a longitudinal cross-sectional view which shows the structure of the conventional light emitting element mounting package.

符号の説明Explanation of symbols

１１…パッケージ本体、１２…発光素子、１３…キャビティ、１８…下地メタライズ層、１９…光沢ニッケルめっき層、２０…光沢銀めっき層、２１…光反射面   DESCRIPTION OF SYMBOLS 11 ... Package main body, 12 ... Light emitting element, 13 ... Cavity, 18 ... Base metallizing layer, 19 ... Bright nickel plating layer, 20 ... Bright silver plating layer, 21 ... Light reflecting surface

Claims (2)

発光素子を搭載するためのキャビティを有し、このキャビティの周側面を前記発光素子の光を外側に向けて反射する光反射面として用いる発光素子搭載用パッケージにおいて、 前記光反射面には、光沢ニッケルめっき層を下地とし、その上に光沢銀めっき層が形成されていることを特徴とする発光素子搭載用パッケージ。   A light emitting element mounting package having a cavity for mounting a light emitting element, and using a peripheral side surface of the cavity as a light reflecting surface that reflects light of the light emitting element toward the outside. A package for mounting a light emitting element, wherein a nickel plating layer is used as a base and a bright silver plating layer is formed thereon. パッケージ本体は、アルミナ、窒化アルミニウム等の高温焼成セラミックで形成され、 前記キャビティの周側面には、タングステン、モリブデン等の高融点金属よりなる下地メタライズ層が前記パッケージ本体と同時焼成され、この下地メタライズ層の上に前記光沢ニッケルめっき層が形成されていることを特徴とする請求項１に記載の発光素子搭載用パッケージ。   The package body is made of a high-temperature fired ceramic such as alumina or aluminum nitride, and a base metallization layer made of a refractory metal such as tungsten or molybdenum is co-fired with the package body on the peripheral side surface of the cavity. The light-emitting element mounting package according to claim 1, wherein the bright nickel plating layer is formed on the layer.
JP2005116369A 2005-04-14 2005-04-14 Package for mounting light-emitting element Pending JP2006295011A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010086595A (en) * 2008-09-30 2010-04-15 Alps Electric Co Ltd Magnetic disk device
JP2015070247A (en) * 2013-10-01 2015-04-13 アピックヤマダ株式会社 Manufacturing method of lead frame substrate, manufacturing method of light emitting device, manufacturing method of lead frame for light emitting diode, and lead frame structure for diode
CN108172676A (en) * 2018-01-25 2018-06-15 研创光电科技（赣州）有限公司 A kind of LED Ceramic Composites package substrate and its production technology

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010086595A (en) * 2008-09-30 2010-04-15 Alps Electric Co Ltd Magnetic disk device
US8107185B2 (en) 2008-09-30 2012-01-31 Alps Electronics Co., Ltd. Magnetic disk device including a sensor in a case
JP2015070247A (en) * 2013-10-01 2015-04-13 アピックヤマダ株式会社 Manufacturing method of lead frame substrate, manufacturing method of light emitting device, manufacturing method of lead frame for light emitting diode, and lead frame structure for diode
CN108172676A (en) * 2018-01-25 2018-06-15 研创光电科技（赣州）有限公司 A kind of LED Ceramic Composites package substrate and its production technology

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