JP2006286837A - Led device - Google Patents

Led device Download PDF

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Publication number
JP2006286837A
JP2006286837A JP2005103238A JP2005103238A JP2006286837A JP 2006286837 A JP2006286837 A JP 2006286837A JP 2005103238 A JP2005103238 A JP 2005103238A JP 2005103238 A JP2005103238 A JP 2005103238A JP 2006286837 A JP2006286837 A JP 2006286837A
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Prior art keywords
pattern
led element
heat dissipation
led
heat
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Japanese (ja)
Inventor
Norifumi Hattori
徳文 服部
Yoshimasa Tatewaki
慶真 帯刀
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2005103238A priority Critical patent/JP2006286837A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED device superior in a radiation characteristic. <P>SOLUTION: The LED device is provided with a substrate, a metallic radiation pattern which is formed on the substrate and whose thickness is 100 to 300 μm, and an LED element mounted on the radiation pattern. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明はＬＥＤ装置に関する。詳しくは、ＬＥＤ装置の放熱特性の改良に関する。   The present invention relates to an LED device. In detail, it is related with the improvement of the thermal radiation characteristic of an LED apparatus.

従来、ＬＥＤ装置において、ＬＥＤ実装用基板には金属製基板が使用されている。そして、金属製基板の上には絶縁層が形成され、その上にＬＥＤ素子が実装される。   Conventionally, in an LED device, a metal substrate is used as an LED mounting substrate. An insulating layer is formed on the metal substrate, and the LED element is mounted thereon.

従来のＬＥＤ装置では、ＬＥＤ素子の熱を金属製基板に伝導し、放熱させることで放熱特性の向上を図っている。しかし、ＬＥＤ素子と金属製基板との間に熱伝導性の低い接着層が介在するために、ＬＥＤ素子の熱は基板へ効率的に伝導されていない。このため、従来のＬＥＤ装置の放熱特性には改善の余地がある。
一方、近年、ＬＥＤ装置の用途の多様化に伴い、高輝度化の要請がある。ＬＥＤ素子を高輝度で発光させるには、ＬＥＤ素子へ流す電流量を多くすることが考えられる。しかし、ＬＥＤ素子へ流す電流量を多くすることは発熱量を増大させることとなり、ＬＥＤ素子の駆動安定性、信頼性の低下を招く惧れがある。そのため、ＬＥＤ装置の放熱特性のさらなる向上が課題となる。
そこで本発明は以上の課題に鑑み、放熱特性に優れたＬＥＤ装置を提供することを目的とする。 In the conventional LED device, the heat of the LED element is conducted to the metal substrate and radiated to improve the heat radiation characteristics. However, since an adhesive layer having low thermal conductivity is interposed between the LED element and the metal substrate, the heat of the LED element is not efficiently conducted to the substrate. For this reason, there is room for improvement in the heat dissipation characteristics of the conventional LED device.
On the other hand, in recent years, with the diversification of uses of LED devices, there is a demand for higher brightness. In order to cause the LED element to emit light with high luminance, it is conceivable to increase the amount of current flowing to the LED element. However, increasing the amount of current flowing to the LED element increases the amount of heat generation, which may lead to a decrease in driving stability and reliability of the LED element. Therefore, the further improvement of the heat dissipation characteristic of an LED device becomes a subject.
In view of the above problems, an object of the present invention is to provide an LED device having excellent heat dissipation characteristics.

本発明は以上の目的を達成するために、以下に示すＬＥＤ装置を提供する。即ち、
基板と、
前記基板上に形成される、厚さが１００〜３００μｍの金属製の放熱パターンと、
前記放熱パターン上に実装されるＬＥＤ素子と、
を備えるＬＥＤ装置である。 In order to achieve the above object, the present invention provides the following LED device. That is,
A substrate,
A metal heat radiation pattern having a thickness of 100 to 300 μm formed on the substrate;
LED elements mounted on the heat dissipation pattern;
It is an LED device provided with.

本発明のＬＥＤ装置では、放熱パターン上にＬＥＤ素子を実装している。放熱パターンは金属製であって熱伝導率が高く、１００〜３００μｍの厚さを有する。これにより放熱パターンはＬＥＤ素子の熱を効率よく放散するヒートシンクとして機能する。従って、本発明のＬＥＤ装置では、ＬＥＤ素子の熱を、放熱パターンを介して基板のＬＥＤ素子側から主に放散することとなる。このように、本発明の構成によれば、従来のＬＥＤ装置のような熱伝導率の低い絶縁層を介した放熱ではなく、効率的に熱を放散する放熱パターンを利用した放熱が行われ、放熱特性に優れたＬＥＤ装置となる。   In the LED device of the present invention, the LED element is mounted on the heat dissipation pattern. The heat radiation pattern is made of metal, has high thermal conductivity, and has a thickness of 100 to 300 μm. Thereby, the heat radiation pattern functions as a heat sink that efficiently dissipates heat of the LED element. Therefore, in the LED device of the present invention, the heat of the LED element is mainly dissipated from the LED element side of the substrate through the heat dissipation pattern. Thus, according to the configuration of the present invention, heat dissipation is performed using a heat dissipation pattern that efficiently dissipates heat, rather than heat dissipation through an insulating layer with low thermal conductivity like a conventional LED device, The LED device has excellent heat dissipation characteristics.

以下、本発明におけるＬＥＤ装置の構成要素について詳細に説明する。
（基板）
本発明で使用する絶縁材の材質としては、例えば、ポリイミド樹脂、ビスマレイミドトリアジン樹脂、フェノール樹脂、ガラス含有エポキシ樹脂等の樹脂やセラミックスを採用することができる。また、基板の材質は熱伝導率が高い材質が好ましい。装置の放熱特性を向上させることができるからである。 Hereinafter, the components of the LED device according to the present invention will be described in detail.
(substrate)
As a material of the insulating material used in the present invention, for example, a resin such as polyimide resin, bismaleimide triazine resin, phenol resin, glass-containing epoxy resin, or ceramics can be employed. Further, the material of the substrate is preferably a material having high thermal conductivity. This is because the heat dissipation characteristics of the device can be improved.

（放熱パターン）
基板上には放熱パターンが設けられる。放熱パターン上には、後述のＬＥＤ素子が実装される。放熱パターンの材質は、Ｃｕ、Ａｇ、Ａｌ、などの金属やセラミックス等である。放熱パターンとしては金属やセラミックス等を接着剤で貼り付けて使用することができるが、後述のようにエッチングによるパターンの形成を考えると金属であるＣｕが好ましい。放熱パターンの厚さは１００〜３００μｍ、好ましくは１２５〜２５０μｍ、より好ましくは１５０〜２００μｍである。放熱パターンは、基板上に設置される他の部材に影響を与えない範囲で、基板上のできるだけ広い領域に設けることが好ましい。例えば、放熱パターンの面積を、ＬＥＤ素子が接着される面積の１０〜１０００倍とする。放熱パターンの面積を、ＬＥＤ素子が接着される面積に比べ十分広くすることにより、ＬＥＤ素子の熱を効率的に放散するヒートシンクとして放熱パターンを機能させることができる。放熱パターンの形状の一態様を図１Ａに示す。ＬＥＤ装置１ａでは、基板１１上に放熱パターン１２ａが設けられ、その略中央にＬＥＤ素子１３が設置されている。基板１１上面の左右縁部近傍には導電パターン１４が設けられている。放熱パターン１２ａは基板１１上面の内、導電パターン１４の周囲と基板１１の縁部とを除く領域に、略均一の厚さ（２００μｍ）で形成されている。かかる形状の放熱パターン１２ａは、ＬＥＤ素子１３が接着する面積にくらべて十分大きい面積を有し、ＬＥＤ素子１３の熱を効率的に放散することができる。放熱パターンの形状の他の態様を図１Ｂに示す。ＬＥＤ装置１ｂにおいて、放熱パターン１２ｂは基板１１上面の内、導電パターン１４の周囲と基板１１の縁部近傍とを除く領域に、略均一の厚さ（２００μｍ）で形成されている。放熱パターン１２ｂの縁部は、一定間隔で切込みが入った櫛状となっている。かかる形状の放熱パターン１２ｂでは、表面積がさらに増すため、ＬＥＤ素子１３の熱をより効率的に放散することができる。 (Heat dissipation pattern)
A heat dissipation pattern is provided on the substrate. The LED element described later is mounted on the heat dissipation pattern. The material of the heat dissipation pattern is a metal such as Cu, Ag, Al, ceramics, or the like. As the heat dissipation pattern, metal, ceramics, or the like can be used by being bonded with an adhesive. However, considering the formation of the pattern by etching as described later, Cu which is a metal is preferable. The thickness of the heat dissipation pattern is 100 to 300 μm, preferably 125 to 250 μm, more preferably 150 to 200 μm. The heat radiation pattern is preferably provided in as wide an area as possible on the substrate as long as it does not affect other members installed on the substrate. For example, the area of the heat dissipation pattern is 10 to 1000 times the area where the LED element is bonded. By making the area of the heat dissipation pattern sufficiently larger than the area where the LED element is bonded, the heat dissipation pattern can function as a heat sink that efficiently dissipates the heat of the LED element. One embodiment of the shape of the heat dissipation pattern is shown in FIG. 1A. In the LED device 1a, the heat radiation pattern 12a is provided on the substrate 11, and the LED element 13 is installed at the approximate center thereof. Conductive patterns 14 are provided in the vicinity of the left and right edges of the upper surface of the substrate 11. The heat radiation pattern 12a is formed with a substantially uniform thickness (200 μm) in the upper surface of the substrate 11 excluding the periphery of the conductive pattern 14 and the edge of the substrate 11. The heat dissipation pattern 12a having such a shape has a sufficiently large area as compared with the area to which the LED element 13 adheres, and can efficiently dissipate the heat of the LED element 13. Another embodiment of the shape of the heat dissipation pattern is shown in FIG. 1B. In the LED device 1 b, the heat dissipation pattern 12 b is formed with a substantially uniform thickness (200 μm) in a region excluding the periphery of the conductive pattern 14 and the vicinity of the edge of the substrate 11 in the upper surface of the substrate 11. The edges of the heat dissipation pattern 12b are comb-shaped with cuts at regular intervals. In the heat radiation pattern 12b having such a shape, the surface area is further increased, so that the heat of the LED element 13 can be dissipated more efficiently.

放熱パターンに凹部を設け、この凹部内に後述するＬＥＤ素子を実装することが好ましい。かかる凹部を設けることにより、ＬＥＤ素子の実装位置が明確となるため、ＬＥＤ素子の実装が容易となる。凹部は、切削や打付けによって形成することができる。
また、ＬＥＤ素子の実装位置に設ける凹部とは別に、放熱パターンの表面に凹凸を設けることが好ましい。放熱パターンの表面積が大きくなり、放熱が促進されるからである。 It is preferable to provide a recess in the heat dissipation pattern and mount an LED element to be described later in the recess. By providing such a recess, the mounting position of the LED element becomes clear, so that the LED element can be easily mounted. The recess can be formed by cutting or hammering.
Moreover, it is preferable to provide unevenness | corrugation in the surface of a thermal radiation pattern separately from the recessed part provided in the mounting position of an LED element. This is because the surface area of the heat dissipation pattern is increased and heat dissipation is promoted.

放熱パターンはエッチングで形成することが好ましい。エッチングによれば所望形状のパターンを容易に形成でき、作業効率が向上するからである。エッチングの方法としては特に限定されず、ウェットエッチング、ドライエッチングなど、公知の方法を採用できる。
放熱パターンの材質と同一の材質により、ＬＥＤ素子へ電力を供給する導電パターンを形成することができる。例えば、放熱パターンをエッチングで形成する場合に、放熱パターンの形成と同時に導電パターンを形成する。詳しくは、放熱パターン及び導電パターンを以下のように形成することができる。まず、基板上に１００〜３００μｍの金属層を形成する。この金属層上に放熱パターン及び導電パターンと同一の形状のレジストパターンを形成したのち、エッチング処理を行ってレジストパターン以外の部分の金属層を基板が露出するまで除去する。その後、レジストパターンを取り除く。かかる方法によると、放熱パターンと導電パターンとを同一の材質で、同時に形成することができるため、製造工程が削減される。
なお、基板として、金属製などの導電性を有する基板を使用する場合は、基板上に絶縁層を設け、その上に放熱パターンを形成する。 The heat radiation pattern is preferably formed by etching. This is because the pattern of the desired shape can be easily formed by the etching, and the working efficiency is improved. The etching method is not particularly limited, and a known method such as wet etching or dry etching can be employed.
A conductive pattern for supplying power to the LED element can be formed of the same material as the material of the heat dissipation pattern. For example, when the heat dissipation pattern is formed by etching, the conductive pattern is formed simultaneously with the formation of the heat dissipation pattern. Specifically, the heat dissipation pattern and the conductive pattern can be formed as follows. First, a 100 to 300 μm metal layer is formed on a substrate. A resist pattern having the same shape as the heat radiation pattern and the conductive pattern is formed on the metal layer, and then an etching process is performed to remove the metal layer other than the resist pattern until the substrate is exposed. Thereafter, the resist pattern is removed. According to this method, since the heat radiation pattern and the conductive pattern can be formed simultaneously with the same material, the manufacturing process is reduced.
In addition, when using the board | substrate which has conductivity, such as metal, as a board | substrate, an insulating layer is provided on a board | substrate and a thermal radiation pattern is formed on it.

（ＬＥＤ素子）
本発明では放熱パターン上にＬＥＤ素子を実装する。使用するＬＥＤ素子はフェイスアップタイプのＬＥＤ素子を採用できる。ＬＥＤ素子の発光色は目的に応じて適宜選択される。例えば、青色、赤色、緑色等、所望の発光色に応じて選択される。また、ＬＥＤ素子を複数個用いることもできる。その場合には、同種のＬＥＤ素子を組み合わせることはもちろんのこと、異なる種類のＬＥＤ素子を複数組み合わせても良い。例えば、光の三原色である赤、緑、青色の発光色を有するＬＥＤ素子を組み合わせる。かかる構成によれば、任意の色を発光可能なＬＥＤ装置とすることができる。 (LED element)
In the present invention, the LED element is mounted on the heat dissipation pattern. The LED element to be used can employ a face-up type LED element. The emission color of the LED element is appropriately selected according to the purpose. For example, it is selected according to a desired emission color such as blue, red, and green. A plurality of LED elements can also be used. In that case, it is possible to combine a plurality of different types of LED elements as well as to combine the same types of LED elements. For example, LED elements having emission colors of red, green, and blue, which are the three primary colors of light, are combined. According to such a configuration, an LED device capable of emitting any color can be obtained.

ＬＥＤ素子は接着材料により放熱パターン上の所定の位置に固定（実装）される。ＬＥＤ素子を固定する接着材料の材質は熱伝導性を有するものであることが好ましく、銀ペースト、ダイヤモンドペースト、ハンダ等の熱伝導性の接着材料を例示することができる。かかる熱伝導性接着材料によってＬＥＤ素子を放熱パターン上に実装すれば、ＬＥＤ素子の熱を放熱パターンへ高い効率で伝導させることができるので、装置の放熱特性を向上させることができる。さらにＬＥＤ素子は、その一部が熱伝導性接着材料に埋入した状態で放熱パターン上に実装されていることが好ましい。かかる構成によると、ＬＥＤ素子の下面のみならず、ＬＥＤ素子の側周が熱伝導性接着材料と接することとなる。これにより、ＬＥＤ素子と放熱パターンとの接着性の向上に加えて、ＬＥＤ素子の側周から放出される熱を熱伝導性接着材料を介して、より効率的に放熱パターンへ伝導することができ、装置の放熱特性がより向上するからである。例えば、既述のように放熱パターン上に凹部を設け、この凹部内に熱伝導性接着材料を充填し、ＬＥＤ素子の下部が熱伝導性接着材料に埋入するようにＬＥＤ素子を実装する。このようにＬＥＤ素子を実装すると、ＬＥＤ素子の位置決めが容易で且つ、放熱特性に優れたＬＥＤ装置となる。   The LED element is fixed (mounted) at a predetermined position on the heat radiation pattern by an adhesive material. The material of the adhesive material for fixing the LED element is preferably one having thermal conductivity, and examples thereof include thermally conductive adhesive materials such as silver paste, diamond paste, and solder. If the LED element is mounted on the heat dissipation pattern with such a heat conductive adhesive material, the heat of the LED element can be conducted to the heat dissipation pattern with high efficiency, so that the heat dissipation characteristics of the device can be improved. Furthermore, it is preferable that the LED element is mounted on the heat radiation pattern in a state where a part of the LED element is embedded in the heat conductive adhesive material. According to such a configuration, not only the lower surface of the LED element but also the side periphery of the LED element is in contact with the heat conductive adhesive material. As a result, in addition to improving the adhesion between the LED element and the heat dissipation pattern, heat released from the side periphery of the LED element can be more efficiently conducted to the heat dissipation pattern via the heat conductive adhesive material. This is because the heat dissipation characteristics of the device are further improved. For example, as described above, a recess is provided on the heat dissipation pattern, the heat conductive adhesive material is filled in the recess, and the LED element is mounted so that the lower portion of the LED element is embedded in the heat conductive adhesive material. When the LED element is mounted in this manner, the LED element can be easily positioned and has excellent heat dissipation characteristics.

以下に、実施例を用いて本発明をより詳細に説明する。   Hereinafter, the present invention will be described in more detail with reference to examples.

本発明の一の実施例であるＬＥＤ装置１の斜視図を図２に示す。図２におけるＡ−Ａ位置の断面図を図３に示す。
ＬＥＤ装置１０は、基板１１、放熱パターン１２、ＬＥＤ素子１３及び、導電パターン１４を備える。基板１１はポリイミド樹脂製の基板である。基板１１上には放熱パターン１２と導電パターン１４とがエッチングによって形成されている。放熱パターン１２はＣｕ製であって、基板１１の縁部及び導電パターン１４の周囲領域を除く領域に形成されている。放熱パターン１２は２００μｍの厚さを有する。放熱パターン１２の略中央部はポンチの打ち付けによって凹部が形成されている。この凹部には銀ペーストからなる接着層１５によってＬＥＤ素子１３が固定（実装）されている。ＬＥＤ素子１３はフェイスアップタイプの青色ＬＥＤである。ＬＥＤ素子１３はワイヤ１６により導電パターン１４とワイヤボンディングされている。ＬＥＤ素子１３は図３に示すように、その下部が接着層１５に埋入している。なお、放熱パターン１２の上面には、中央部を除く略全域に、ＬＥＤ素子１３が実装される凹部とは別に、凹凸が形成されている。 FIG. 2 shows a perspective view of the LED device 1 according to one embodiment of the present invention. FIG. 3 is a cross-sectional view taken along the line AA in FIG.
The LED device 10 includes a substrate 11, a heat dissipation pattern 12, an LED element 13, and a conductive pattern 14. The substrate 11 is a polyimide resin substrate. A heat radiation pattern 12 and a conductive pattern 14 are formed on the substrate 11 by etching. The heat dissipation pattern 12 is made of Cu, and is formed in a region excluding the edge of the substrate 11 and the peripheral region of the conductive pattern 14. The heat radiation pattern 12 has a thickness of 200 μm. A concave portion is formed in the substantially central portion of the heat dissipation pattern 12 by punching. The LED element 13 is fixed (mounted) to the recess by an adhesive layer 15 made of silver paste. The LED element 13 is a face-up type blue LED. The LED element 13 is wire-bonded to the conductive pattern 14 by a wire 16. As shown in FIG. 3, the lower part of the LED element 13 is embedded in the adhesive layer 15. In addition, on the upper surface of the heat radiation pattern 12, unevenness is formed in substantially the entire area except for the central portion, in addition to the recess in which the LED element 13 is mounted.

ＬＥＤ素子１３は、導電パターン１４からワイヤ１６を介して電力の供給を受けて発光し発熱する。ＬＥＤ素子１３の熱は接着層１５を介して放熱パターン１２へ伝導する。ここで、接着層１５は熱伝導性の高い銀ペーストからなり、図３に示すようにＬＥＤ素子１３の下面のみならず側周の一部とも接触しているため、ＬＥＤ素子１３の熱を放熱パターン１２へ効率的に伝導する。放熱パターン１２に伝導された熱は、放熱パターン１２の表面から外部へ放散される。放熱パターン１２はＣｕ製であって熱伝導率が高い。さらに放熱パターン１２は、厚さが２００μｍと厚く、その表面積がＬＥＤ素子１３との接着層１５を介した接触面積に比べて十分大きいため、ＬＥＤ素子１３の熱を効率的に伝導する。加えて、放熱パターン１２の上面には凹凸が形成されており、平滑な面である場合に比べてその表面積が大きい。これにより、外部への熱の放散が促進される。従って、かかる放熱パターン１２によると、ＬＥＤ素子１３の熱は放熱パターン１２の表面（基板１１のＬＥＤ素子側）から効率的に放散されることとなる。このようにＬＥＤ装置１０は放熱特性に優れたＬＥＤ装置であり、ＬＥＤ素子１３の駆動安定性に優れた、信頼性の高い装置となる。   The LED element 13 is supplied with electric power from the conductive pattern 14 via the wire 16 and emits light to generate heat. The heat of the LED element 13 is conducted to the heat radiation pattern 12 through the adhesive layer 15. Here, the adhesive layer 15 is made of a silver paste having high thermal conductivity, and is in contact with not only the lower surface of the LED element 13 but also a part of the side periphery as shown in FIG. Conducts efficiently to the pattern 12. The heat conducted to the heat dissipation pattern 12 is dissipated from the surface of the heat dissipation pattern 12 to the outside. The heat radiation pattern 12 is made of Cu and has high thermal conductivity. Furthermore, since the heat radiation pattern 12 is as thick as 200 μm and its surface area is sufficiently larger than the contact area with the LED element 13 through the adhesive layer 15, the heat radiation pattern 12 efficiently conducts heat of the LED element 13. In addition, unevenness is formed on the upper surface of the heat radiation pattern 12, and its surface area is larger than that of a smooth surface. This promotes heat dissipation to the outside. Therefore, according to the heat dissipation pattern 12, the heat of the LED element 13 is efficiently dissipated from the surface of the heat dissipation pattern 12 (the LED element side of the substrate 11). Thus, the LED device 10 is an LED device excellent in heat dissipation characteristics, and is a highly reliable device excellent in driving stability of the LED element 13.

この発明は、上記発明の実施の形態及び実施例の説明に何ら限定されるものではない。特許請求の範囲の記載を逸脱せず、当業者が容易に想到できる範囲で種々の変形態様もこの発明に含まれる。   The present invention is not limited to the description of the embodiments and examples of the invention described above. Various modifications may be included in the present invention as long as those skilled in the art can easily conceive without departing from the description of the scope of claims.

本発明のＬＥＤ装置は、様々な発光部の光源として利用される。例えば、室内照明の光源、ＬＣＤのバックライト光源としてその利用が図られる。   The LED device of the present invention is used as a light source of various light emitting units. For example, it can be used as a light source for indoor lighting and a backlight light source for LCD.

図１Ａは本発明の一実施態様であるＬＥＤ装置１ａにおける放熱パターンの形状の模式図である。図１Ｂは本発明の他の実施態様であるＬＥＤ装置１ｂにおける放熱パターンの形状の模式図である。FIG. 1A is a schematic diagram of the shape of a heat dissipation pattern in an LED device 1a according to an embodiment of the present invention. FIG. 1B is a schematic view of the shape of the heat dissipation pattern in the LED device 1b according to another embodiment of the present invention. 図２は本発明の一の実施態様であるＬＥＤ装置１０の斜視図である。FIG. 2 is a perspective view of the LED device 10 according to one embodiment of the present invention. 図３は図２におけるＡ−Ａ断面図である。3 is a cross-sectional view taken along the line AA in FIG.

符号の説明Explanation of symbols

１ １０ ＬＥＤ装置
１１ 基板
１２ １２ａ １２ｂ 放熱パターン
１３ ＬＥＤ素子
１４ 導電パターン
１５ 接着層
１６ ワイヤ 1 10 LED device 11 Substrate 12 12a 12b Heat radiation pattern 13 LED element 14 Conductive pattern 15 Adhesive layer 16 Wire

Claims (6)

基板と、
前記基板上に形成される、厚さが１００〜３００μｍの金属製の放熱パターンと、
前記放熱パターン上に実装されるＬＥＤ素子と、
を備えるＬＥＤ装置。 A substrate,
A metal heat radiation pattern having a thickness of 100 to 300 μm formed on the substrate;
LED elements mounted on the heat dissipation pattern;
An LED device comprising: 前記放熱パターンが凹部を備え、該凹部内に前記ＬＥＤ素子が実装されている、請求項１に記載のＬＥＤ装置。   The LED device according to claim 1, wherein the heat radiation pattern includes a recess, and the LED element is mounted in the recess. 熱伝導性接着材料によって前記放熱パターン上に前記ＬＥＤ素子が実装されている、請求項１又は２に記載のＬＥＤ装置。   The LED device according to claim 1, wherein the LED element is mounted on the heat dissipation pattern by a thermally conductive adhesive material. その一部が前記熱伝導性接着材料内に埋入した状態で前記ＬＥＤ素子が実装されている、請求項３に記載のＬＥＤ装置。   The LED device according to claim 3, wherein the LED element is mounted in a state in which a part thereof is embedded in the thermally conductive adhesive material. 前記放熱パターンの表面に凹凸が形成されている、請求項１〜４のいずれかに記載のＬＥＤ装置。   The LED device according to claim 1, wherein irregularities are formed on a surface of the heat radiation pattern. 前記放熱パターンがエッチングによって形成される、請求項１〜５のいずれかに記載のＬＥＤ装置。   The LED device according to claim 1, wherein the heat radiation pattern is formed by etching.
JP2005103238A 2005-03-31 2005-03-31 Led device Pending JP2006286837A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008258413A (en) * 2007-04-05 2008-10-23 Rohm Co Ltd Semiconductor light-emitting device
JP2009105161A (en) * 2007-10-22 2009-05-14 Panasonic Electric Works Co Ltd Light-emitting device
KR100951779B1 (en) 2008-05-09 2010-04-08 주식회사 디에스엘시디 LED Package and The Method of Manufacturing Thereof
JP2011023528A (en) * 2009-07-15 2011-02-03 Renesas Electronics Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008258413A (en) * 2007-04-05 2008-10-23 Rohm Co Ltd Semiconductor light-emitting device
WO2008126696A1 (en) * 2007-04-05 2008-10-23 Rohm Co., Ltd. Semiconductor light-emitting device
US8035124B2 (en) 2007-04-05 2011-10-11 Rohm Co., Ltd. Semiconductor light-emitting device
US8227829B2 (en) 2007-04-05 2012-07-24 Rohm Co., Ltd. Semiconductor light-emitting device
JP2009105161A (en) * 2007-10-22 2009-05-14 Panasonic Electric Works Co Ltd Light-emitting device
KR100951779B1 (en) 2008-05-09 2010-04-08 주식회사 디에스엘시디 LED Package and The Method of Manufacturing Thereof
JP2011023528A (en) * 2009-07-15 2011-02-03 Renesas Electronics Corp Semiconductor device
US8384230B2 (en) 2009-07-15 2013-02-26 Renesas Electronics Corporation Semiconductor device
US8686574B2 (en) 2009-07-15 2014-04-01 Renesas Electronics Corporation Semiconductor device
US8975762B2 (en) 2009-07-15 2015-03-10 Renesas Electronics Corporation Semiconductor device
US11244883B2 (en) 2009-07-15 2022-02-08 Renesas Electronics Corporation Semiconductor device

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