JP2006269682A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- JP2006269682A JP2006269682A JP2005084778A JP2005084778A JP2006269682A JP 2006269682 A JP2006269682 A JP 2006269682A JP 2005084778 A JP2005084778 A JP 2005084778A JP 2005084778 A JP2005084778 A JP 2005084778A JP 2006269682 A JP2006269682 A JP 2006269682A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 285
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 169
- 229910000679 solder Inorganic materials 0.000 claims abstract description 131
- 239000000758 substrate Substances 0.000 claims abstract description 121
- 239000000463 material Substances 0.000 claims abstract description 104
- 239000010419 fine particle Substances 0.000 claims description 109
- 229910052751 metal Inorganic materials 0.000 claims description 93
- 239000002184 metal Substances 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 229910007637 SnAg Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910008433 SnCU Inorganic materials 0.000 claims description 6
- 229910006913 SnSb Inorganic materials 0.000 claims description 6
- 239000011859 microparticle Substances 0.000 claims description 3
- 229910001111 Fine metal Inorganic materials 0.000 abstract 3
- 239000002923 metal particle Substances 0.000 abstract 3
- 238000005304 joining Methods 0.000 description 16
- 238000001816 cooling Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 5
- 239000002470 thermal conductor Substances 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
この発明は、半導体装置およびその製造方法に関し、特に半導体素子の表面電極および裏面電極にそれぞれ配線用導体および導体基板を面接合させる接合技術に関する。 The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a joining technique in which a wiring conductor and a conductor substrate are surface-bonded to a front electrode and a back electrode of a semiconductor element, respectively.
半導体装置を構成する部材同士の接合部には、信頼性、導電性および熱伝導性が要求される。図11は、従来のパワー半導体装置の要部を示す正面図である。図11において、符号1は、その表面に電気回路を兼ねる導体基板2が接合され、かつその裏面に図示しない冷却部材への熱伝導を担う熱伝導体3が接合された絶縁基板である。 Reliability, conductivity, and thermal conductivity are required for a joint portion between members constituting the semiconductor device. FIG. 11 is a front view showing a main part of a conventional power semiconductor device. In FIG. 11, reference numeral 1 denotes an insulating substrate in which a conductive substrate 2 also serving as an electric circuit is bonded to the front surface, and a heat conductor 3 for conducting heat conduction to a cooling member (not shown) is bonded to the back surface.
従来は、この導体基板2の表面に半導体素子4の裏面電極(図示省略)がはんだ材料5を用いて接合されている。半導体素子4の表面電極(図示省略)は、ボンディングワイヤ6を介して導体基板2に電気的に接続されている。また、熱伝導体3と図示しない冷却部材との接合にもはんだ材料が用いられている。
Conventionally, a back electrode (not shown) of the semiconductor element 4 is joined to the surface of the conductor substrate 2 using a
半導体素子4は、通電時に熱を発生する。そして、半導体素子4と導体基板2の接合部が面接合であるため、その接合部には大きな熱ひずみが発生する。それによって、その接合部を構成するはんだ材料は、過酷な使用環境下に置かれることになるので、そのはんだ材料には、高熱伝導性と熱疲労強度に優れた特性が要求される。そのような特性を備えたはんだ材料として、従来、鉛入りの高温はんだ材料(溶融点290℃)が使用されている。 The semiconductor element 4 generates heat when energized. And since the junction part of the semiconductor element 4 and the conductor substrate 2 is surface junction, a big thermal strain generate | occur | produces in the junction part. As a result, the solder material constituting the joint portion is placed under a severe use environment, and therefore, the solder material is required to have characteristics excellent in high thermal conductivity and thermal fatigue strength. Conventionally, lead-containing high-temperature solder materials (melting point 290 ° C.) have been used as solder materials having such characteristics.
しかし、近時、環境上の配慮から、鉛を含まない(鉛フリー)はんだ材料を用いることが要求されている。この温度に対応可能な鉛フリーはんだ材料としてAu−Sn合金があるが、高価であるため、実用的ではない。実用性の点から、鉛フリーはんだ材料としてSnAgはんだ材料(溶融点220℃)が適当である。 However, recently, due to environmental considerations, it is required to use a lead-free (lead-free) solder material. There is an Au-Sn alloy as a lead-free solder material that can cope with this temperature, but it is not practical because it is expensive. From the viewpoint of practicality, a SnAg solder material (melting point 220 ° C.) is suitable as a lead-free solder material.
ところで、一般的なはんだ材料に代えて、金属の微粒子を用いた接合技術が公知である。例えば、多数の電極を有する電極配設基体の電極と、他の基体に設けた電極との接合に、平均直径が100nm程度以下の金属核の周囲を有機物で結合・被覆することによって生成した複合型金属ナノ粒子を主材とする接合材料を用いることが提案されている(例えば、特許文献1参照。)。 By the way, a joining technique using metal fine particles instead of a general solder material is known. For example, a composite formed by bonding and covering the periphery of a metal core having an average diameter of about 100 nm or less with an organic substance at the junction of an electrode of an electrode-arranged substrate having a large number of electrodes and an electrode provided on another substrate It has been proposed to use a bonding material mainly composed of mold-type metal nanoparticles (see, for example, Patent Document 1).
また、2つ以上の部材を、金属の焼結組織からなる金属焼結部を含む接合部でもって接合することが提案されている(例えば、特許文献2参照。)。これらはいずれも、金属微粒子のサイズが100nm以下であれば、金属微粒子同士を互いに接触させた状態で250℃程度以下の温度で焼成することにより、金属微粒子の集合体が焼結して、被接合部材同士を接合することができるということを利用している。 Further, it has been proposed to join two or more members with a joint including a metal sintered part made of a metal sintered structure (see, for example, Patent Document 2). In any case, if the size of the metal fine particles is 100 nm or less, the aggregate of the metal fine particles is sintered by firing at a temperature of about 250 ° C. or less while the metal fine particles are in contact with each other. The fact that the joining members can be joined is utilized.
近時、半導体パッケージの小型化、半導体素子の面積低減化に伴い、電流密度の増加が望まれている。また、半導体基板と導体基板の接合部の熱疲労信頼性および熱伝導性の一層の向上が望まれている。一方、従来のワイヤボンディング技術では、負荷電流レベルの限界にきており、パワーサイクル寿命の点でも、ボンディングワイヤと半導体素子の接合部の熱疲労が一層、厳しいものとなっている。これらの対策として、半導体素子の表面の電流密度を均一化して温度分布の均一化を図るとともに、半導体素子の裏面側に加えて表面側からも熱を逃がす構造として、半導体素子の表面電極に配線用導体を面接合させてその接合面積を大きくすることが考えられる。 In recent years, an increase in current density has been desired along with miniaturization of semiconductor packages and reduction in area of semiconductor elements. In addition, it is desired to further improve the thermal fatigue reliability and thermal conductivity of the joint between the semiconductor substrate and the conductor substrate. On the other hand, the conventional wire bonding technology has reached the limit of the load current level, and the thermal fatigue of the bonding portion between the bonding wire and the semiconductor element is more severe in terms of the power cycle life. As measures against these problems, the current density on the surface of the semiconductor element is made uniform to make the temperature distribution uniform, and the heat is released from the front surface side in addition to the back surface side of the semiconductor element. It is conceivable to increase the bonding area by surface bonding of the conductor.
この場合、半導体素子の表面電極と配線用導体の接合、および半導体素子の裏面電極と導体基板の接合にはんだ材料を用いることが考えられる。しかし、両接合部にSnAg系はんだ材料を用いると、SnAg系はんだ材料の接合作業温度である250℃に加熱して接合する際、半導体素子の上下ではんだ材料が同時に溶融する。そのため、はんだの表面張力によって半導体素子が回転するなど動いてしまい、半導体素子の接合位置の精度が低くなるという問題点がある。 In this case, it is conceivable to use a solder material for joining the front electrode of the semiconductor element and the wiring conductor and joining the back electrode of the semiconductor element and the conductor substrate. However, when a SnAg solder material is used for both joints, the solder material is simultaneously melted above and below the semiconductor element when the solder is joined to the SnAg solder material at a working temperature of 250 ° C. Therefore, there is a problem that the semiconductor element is moved by rotating the surface tension of the solder and the accuracy of the joining position of the semiconductor element is lowered.
この発明は、上述した従来技術による問題点を解消するため、鉛を含まない接合材料により、半導体素子の表面電極に配線用導体が面接合され、かつ半導体素子が高い位置精度で導体基板に接合された半導体装置を提供することを目的とする。また、この発明は、鉛を含まない接合材料を用いて、半導体素子の表面電極に配線用導体を面接合させるとともに、半導体素子を高い位置精度で導体基板に接合させることができる半導体装置の製造方法を提供することを目的とする。 In order to eliminate the above-described problems caused by the prior art, the present invention has a bonding material that does not contain lead, the wiring conductor is surface-bonded to the surface electrode of the semiconductor element, and the semiconductor element is bonded to the conductor substrate with high positional accuracy. An object of the present invention is to provide a semiconductor device. In addition, the present invention provides a semiconductor device capable of bonding a wiring conductor to a surface electrode of a semiconductor element using a bonding material that does not contain lead and bonding the semiconductor element to a conductor substrate with high positional accuracy. It aims to provide a method.
上述した課題を解決し、目的を達成するため、請求項1の発明にかかる半導体装置は、半導体素子の裏面電極と導体基板が金属微粒子の焼結体を介して接合され、前記半導体素子の表面電極と配線用導体がはんだ材料を介して接合されていることを特徴とする。この請求項1の発明によれば、金属を微粒子にすることによって、金属微粒子の表面エネルギーが増加し、金属微粒子が活性化する。それによって、例えば純Agの溶融温度が960℃であるにもかかわらず、焼結開始温度が低下する。例えばAg微粒子の場合、そのサイズが100nm以下であれば、250℃付近以下の温度で焼結される。 In order to solve the above-described problems and achieve the object, a semiconductor device according to the invention of claim 1 is formed by joining a back electrode of a semiconductor element and a conductor substrate through a sintered body of metal fine particles. The electrode and the wiring conductor are joined via a solder material. According to the first aspect of the invention, by making the metal into fine particles, the surface energy of the metal fine particles is increased and the metal fine particles are activated. Thereby, for example, although the melting temperature of pure Ag is 960 ° C., the sintering start temperature is lowered. For example, in the case of Ag fine particles, if the size is 100 nm or less, the particles are sintered at a temperature of about 250 ° C. or less.
その焼結によってできた金属微粒子の焼結体が被接合面に接合された状態では、その焼結体の溶融点は金属本来の溶融点となる。金属本来の溶融点は、鉛フリーはんだ材料の溶融点よりも高い。従って、焼結体は、高い耐熱性を有することになる。以上の理由により、半導体素子の裏面電極と導体基板を、金属微粒子を含むペースト(以下、金属微粒子ペーストとする)を用いて接合した後に、半導体素子の表面電極と配線用導体を鉛フリーはんだ材料を用いて接合するようにすれば、半導体素子の表面電極と配線用導体を接合する際に半導体素子が動くのを抑制することができる。従って、半導体素子の接合位置精度の高い半導体装置が得られる。 In a state where the sintered body of metal fine particles formed by the sintering is bonded to the surface to be bonded, the melting point of the sintered body becomes the original melting point of the metal. The original melting point of metals is higher than the melting point of lead-free solder materials. Therefore, the sintered body has high heat resistance. For the above reasons, after joining the back electrode of the semiconductor element and the conductor substrate using a paste containing metal fine particles (hereinafter referred to as metal fine particle paste), the surface electrode of the semiconductor element and the wiring conductor are connected to a lead-free solder material. If the bonding is performed using, it is possible to suppress the movement of the semiconductor element when bonding the surface electrode of the semiconductor element and the wiring conductor. Therefore, a semiconductor device with high bonding position accuracy of semiconductor elements can be obtained.
また、請求項2の発明にかかる半導体装置は、半導体素子の表面電極と配線用導体が金属微粒子の焼結体を介して接合され、前記半導体素子の裏面電極と導体基板がはんだ材料を介して接合されていることを特徴とする。この請求項2の発明によれば、請求項1と同様の理由により、半導体素子の表面電極と配線用導体を金属微粒子ペーストを用いて接合した後に、半導体素子の裏面電極と導体基板を鉛フリーはんだ材料を用いて接合するようにすれば、半導体素子の裏面電極と導体基板を接合する際に半導体素子が動くのを抑制することができる。従って、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a second aspect of the present invention, there is provided a semiconductor device in which the front electrode of the semiconductor element and the wiring conductor are joined via a sintered body of metal fine particles, and the back electrode of the semiconductor element and the conductor substrate are connected via a solder material. It is characterized by being joined. According to the second aspect of the present invention, for the same reason as in the first aspect, after the surface electrode of the semiconductor element and the wiring conductor are joined using the metal fine particle paste, the back electrode of the semiconductor element and the conductive substrate are lead-free. If it joins using a solder material, it can suppress that a semiconductor element moves, when joining the back surface electrode of a semiconductor element, and a conductor board | substrate. Therefore, a semiconductor device with high bonding position accuracy of semiconductor elements can be obtained.
また、請求項3の発明にかかる半導体装置は、半導体素子の裏面電極と導体基板、および前記半導体素子の表面電極と配線用導体が、ともに金属微粒子の焼結体を介して接合されていることを特徴とする。この請求項3の発明によれば、接合にはんだ材料を用いていないので、はんだ材料が溶融したときのはんだの表面張力が原因で半導体素子が動くという現象が起こるのを防ぐことができる。また、金属微粒子の焼結による接合では、はんだ材料のように金属微粒子が溶融した状態になるわけではないので、半導体素子の動きは抑制される。従って、半導体素子の接合位置精度の高い半導体装置が得られる。 Further, in the semiconductor device according to the invention of claim 3, the back electrode of the semiconductor element and the conductor substrate, and the front electrode of the semiconductor element and the conductor for wiring are both bonded through a sintered body of metal fine particles. It is characterized by. According to the third aspect of the present invention, since no solder material is used for joining, it is possible to prevent the phenomenon that the semiconductor element moves due to the surface tension of the solder when the solder material is melted. Moreover, in joining by sintering of metal fine particles, since the metal fine particles are not melted unlike the solder material, the movement of the semiconductor element is suppressed. Therefore, a semiconductor device with high bonding position accuracy of semiconductor elements can be obtained.
また、請求項4の発明にかかる半導体装置は、半導体素子の表面電極と配線用導体がはんだ材料を介して接合され、前記半導体素子の裏面電極と、絶縁基板の表面に設けられた導体基板が金属微粒子の焼結体を介して接合され、前記絶縁基板の裏面に設けられた熱伝導体と熱伝導部材がはんだ材料を介して接合されていることを特徴とする。この請求項4の発明によれば、半導体パッケージの外部冷却体への熱導体でもある熱伝導部材の上に絶縁基板が接合され、絶縁基板の上に半導体素子が接合され、半導体素子の上に配線用導体が接合された構造を有する半導体装置の場合に、請求項1と同様に、先に半導体素子の裏面電極と導体基板を金属微粒子ペーストを用いて接合しておけば、半導体素子の表面電極と配線用導体を接合する際に半導体素子が動くのを抑制することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a fourth aspect of the present invention, there is provided a semiconductor device in which a front electrode of a semiconductor element and a wiring conductor are joined via a solder material, and a back electrode of the semiconductor element and a conductor substrate provided on the surface of an insulating substrate are provided. The heat conductive member and the heat conductive member, which are bonded via a sintered body of metal fine particles and provided on the back surface of the insulating substrate, are bonded via a solder material. According to the fourth aspect of the present invention, the insulating substrate is bonded onto the heat conducting member that is also a heat conductor to the external cooling body of the semiconductor package, the semiconductor element is bonded onto the insulating substrate, and the semiconductor element is In the case of a semiconductor device having a structure in which a wiring conductor is bonded, the surface of the semiconductor element can be obtained by previously bonding the back electrode of the semiconductor element and the conductor substrate using a metal fine particle paste, as in the first aspect. Since it is possible to suppress the movement of the semiconductor element when the electrode and the wiring conductor are bonded, a semiconductor device having a high bonding position accuracy of the semiconductor element can be obtained.
また、請求項5の発明にかかる半導体装置は、半導体素子の表面電極と配線用導体が金属微粒子の焼結体を介して接合され、前記半導体素子の裏面電極と、絶縁基板の表面に設けられた導体基板がはんだ材料を介して接合され、前記絶縁基板の裏面に設けられた熱伝導体と熱伝導部材がはんだ材料を介して接合されていることを特徴とする。この請求項5の発明によれば、半導体パッケージの外部冷却体への熱導体でもある熱伝導部材の上に絶縁基板が接合され、絶縁基板の上に半導体素子が接合され、半導体素子の上に配線用導体が接合された構造を有する半導体装置の場合に、請求項2と同様に、先に半導体素子の表面電極と配線用導体を金属微粒子ペーストを用いて接合しておけば、半導体素子の裏面電極と導体基板を接合する際に半導体素子が動くのを抑制することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。
According to a fifth aspect of the present invention, there is provided a semiconductor device in which a surface electrode of a semiconductor element and a wiring conductor are joined via a sintered body of metal fine particles, and is provided on the back electrode of the semiconductor element and the surface of an insulating substrate. The conductive substrate is bonded via a solder material, and the heat conductor and the heat conductive member provided on the back surface of the insulating substrate are bonded via the solder material. According to the invention of
また、請求項6の発明にかかる半導体装置は、請求項1〜5のいずれか一つに記載の発明において、前記金属微粒子は、前記はんだ材料の溶融温度よりも高い耐熱性を有するAg、CuおよびNiのうちの1または2以上の金属を含む合金よりなることを特徴とする。この請求項6の発明によれば、Ag、CuおよびNiのうちの1または2以上の金属を含む合金よりなる焼結体を介して半導体素子が他の部材に接合されているので、半導体素子の接合位置精度の高い半導体装置が得られる。 A semiconductor device according to a sixth aspect of the present invention is the semiconductor device according to any one of the first to fifth aspects, wherein the metal fine particles are Ag, Cu having heat resistance higher than a melting temperature of the solder material. And an alloy containing one or more metals of Ni. According to the invention of claim 6, since the semiconductor element is joined to the other member through the sintered body made of an alloy containing one or more metals of Ag, Cu and Ni, the semiconductor element Thus, a semiconductor device with high bonding position accuracy can be obtained.
また、請求項7の発明にかかる半導体装置は、請求項1、2、4または5に記載の発明において、前記はんだ材料は、鉛を含まないSnAg系、SnSb系またはSnCu系のはんだ材料であることを特徴とする。この請求項7の発明によれば、鉛フリーはんだ材料を用いた半導体素子の接合が実現される。また、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a seventh aspect of the present invention, in the semiconductor device according to the first, second, fourth, or fifth aspect, the solder material is a SnAg-based, SnSb-based, or SnCu-based solder material that does not contain lead. It is characterized by that. According to the seventh aspect of the present invention, bonding of semiconductor elements using a lead-free solder material is realized. In addition, a semiconductor device with high bonding position accuracy of semiconductor elements can be obtained.
また、請求項8の発明にかかる半導体装置の製造方法は、半導体素子の裏面電極と導体基板が金属微粒子の焼結体を介して接合され、前記半導体素子の表面電極と配線用導体がはんだ材料を介して接合された半導体装置を製造するにあたって、前記裏面電極と前記導体基板を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記表面電極と前記配線用導体をはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする。この請求項8の発明によれば、請求項1と同様の理由により、半導体素子の表面電極と配線用導体を接合する際に半導体素子が動くのを抑制することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。 According to another aspect of the present invention, there is provided a semiconductor device manufacturing method in which a back electrode of a semiconductor element and a conductor substrate are joined via a sintered body of metal fine particles, and the front electrode of the semiconductor element and the wiring conductor are solder materials. In manufacturing a semiconductor device bonded through a metal paste, the back electrode and the conductor substrate are bonded to each other via a paste containing metal fine particles and heated to sinter the metal fine particles, The surface electrode and the wiring conductor are bonded to each other through a solder material, and are heated and bonded. According to the eighth aspect of the invention, for the same reason as in the first aspect, it is possible to suppress the movement of the semiconductor element when bonding the surface electrode of the semiconductor element and the wiring conductor. A semiconductor device with high positional accuracy can be obtained.
また、請求項9の発明にかかる半導体装置の製造方法は、半導体素子の表面電極と配線用導体が金属微粒子の焼結体を介して接合され、前記半導体素子の裏面電極と導体基板がはんだ材料を介して接合された半導体装置を製造するにあたって、前記表面電極と前記配線用導体を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記裏面電極と前記導体基板をはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする。この請求項9の発明によれば、請求項1と同様の理由により、半導体素子の裏面電極と導体基板を接合する際に半導体素子が動くのを抑制することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a ninth aspect of the present invention, there is provided a semiconductor device manufacturing method in which a front surface electrode of a semiconductor element and a wiring conductor are joined via a sintered body of metal fine particles, and the back electrode of the semiconductor element and the conductor substrate are solder materials. In manufacturing the semiconductor device bonded through, after bonding the surface electrode and the wiring conductor through a paste containing metal fine particles, and joining by heating and sintering the metal fine particles, The back electrode and the conductor substrate are bonded to each other through a solder material, and heated to be joined. According to the ninth aspect of the invention, for the same reason as in the first aspect, it is possible to suppress the movement of the semiconductor element when bonding the back electrode of the semiconductor element and the conductor substrate. A highly accurate semiconductor device can be obtained.
また、請求項10の発明にかかる半導体装置の製造方法は、半導体素子の裏面電極と導体基板、および前記半導体素子の表面電極と配線用導体が、ともに金属微粒子の焼結体を介して接合された半導体装置を製造するにあたって、前記裏面電極と前記導体基板、および前記表面電極と配線用導体を、それぞれ金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合することを特徴とする。この請求項10の発明によれば、請求項3と同様に、接合時に半導体素子の動きが抑制されるので、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a tenth aspect of the present invention, there is provided a semiconductor device manufacturing method in which a back electrode of a semiconductor element and a conductor substrate, and a front electrode of the semiconductor element and a conductor for wiring are bonded together through a sintered body of metal fine particles. In manufacturing the semiconductor device, the back electrode and the conductor substrate, and the front electrode and the wiring conductor are bonded to each other through a paste containing metal fine particles, and heated to sinter the metal fine particles. It is characterized by joining. According to the tenth aspect of the invention, as in the third aspect, since the movement of the semiconductor element is suppressed at the time of bonding, a semiconductor device with high bonding position accuracy of the semiconductor element can be obtained.
また、請求項11の発明にかかる半導体装置の製造方法は、半導体素子の表面電極と配線用導体がはんだ材料を介して接合され、前記半導体素子の裏面電極と、絶縁基板の表面に設けられた導体基板が金属微粒子の焼結体を介して接合され、前記絶縁基板の裏面に設けられた熱伝導体と熱伝導部材がはんだ材料を介して接合された半導体装置を製造するにあたって、前記裏面電極と前記導体基板を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記表面電極と前記配線用導体、および前記熱伝導体と前記熱伝導部材を、それぞれはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする。この請求項11の発明によれば、請求項1と同様の理由により、半導体素子の表面電極と配線用導体を接合する際に半導体素子が動くのを抑制することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。 According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a front surface electrode of a semiconductor element and a wiring conductor are joined via a solder material, and provided on a back electrode of the semiconductor element and a surface of an insulating substrate. In manufacturing a semiconductor device in which a conductor substrate is bonded through a sintered body of metal fine particles, and a heat conductor and a heat conductive member provided on the back surface of the insulating substrate are bonded through a solder material, the back electrode And the conductive substrate are bonded to each other through a paste containing metal fine particles, and heated to sinter the metal fine particles, and then the surface electrode, the wiring conductor, the thermal conductor, and the heat The conductive members are bonded to each other via a solder material and heated to be joined. According to the eleventh aspect of the present invention, for the same reason as in the first aspect, it is possible to suppress the movement of the semiconductor element when bonding the surface electrode of the semiconductor element and the wiring conductor. A semiconductor device with high positional accuracy can be obtained.
また、請求項12の発明にかかる半導体装置の製造方法は、半導体素子の表面電極と配線用導体が金属微粒子の焼結体を介して接合され、前記半導体素子の裏面電極と、絶縁基板の表面に設けられた導体基板がはんだ材料を介して接合され、前記絶縁基板の裏面に設けられた熱伝導体と熱伝導部材がはんだ材料を介して接合された半導体装置を製造するにあたって、前記表面電極と前記配線用導体を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記裏面電極と前記導体基板、および前記熱伝導体と前記熱伝導部材を、それぞれはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする。この請求項12の発明によれば、請求項1と同様の理由により、半導体素子の裏面電極と導体基板を接合する際に半導体素子が動くのを抑制することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a twelfth aspect of the present invention, there is provided a semiconductor device manufacturing method in which a front surface electrode of a semiconductor element and a wiring conductor are joined via a sintered body of metal fine particles, In manufacturing a semiconductor device in which a conductor substrate provided on the substrate is bonded via a solder material, and a heat conductor and a heat conductive member provided on the back surface of the insulating substrate are bonded via the solder material, the surface electrode And the wiring conductor are bonded together via a paste containing metal fine particles, and the metal fine particles are joined by heating to sinter the metal fine particles, and then the back electrode, the conductor substrate, the thermal conductor, and the heat The conductive members are bonded to each other via a solder material and heated to be joined. According to the twelfth aspect of the present invention, for the same reason as in the first aspect, it is possible to suppress the movement of the semiconductor element when bonding the back electrode of the semiconductor element and the conductor substrate. A highly accurate semiconductor device can be obtained.
また、請求項13の発明にかかる半導体装置の製造方法は、請求項8〜12のいずれか一つに記載の発明において、前記金属微粒子は、前記はんだ材料の溶融温度よりも高い耐熱性を有するAg、CuおよびNiのうちの1または2以上の金属を含む合金よりなることを特徴とする。この請求項13の発明によれば、Ag、CuおよびNiのうちの1または2以上の金属を含む合金よりなる焼結体を介して半導体素子を他の部材に接合することができるので、半導体素子の接合位置精度の高い半導体装置が得られる。
According to a thirteenth aspect of the present invention, in the semiconductor device manufacturing method according to any one of the eighth to twelfth aspects, the metal fine particles have a heat resistance higher than a melting temperature of the solder material. It consists of an alloy containing one or more metals of Ag, Cu and Ni. According to the invention of
また、請求項14の発明にかかる半導体装置の製造方法は、請求項8、9、11または12に記載の発明において、前記はんだ材料は、鉛を含まないSnAg系、SnSb系またはSnCu系のはんだ材料であることを特徴とする。この請求項14の発明によれば、鉛フリーはんだ材料を用いた半導体素子の接合を実現することができる。また、半導体素子の接合位置精度の高い半導体装置が得られる。 According to a fourteenth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the eighth, ninth, eleventh or twelfth aspect, wherein the solder material is SnAg-based, SnSb-based or SnCu-based solder that does not contain lead. It is a material. According to the fourteenth aspect of the present invention, it is possible to realize bonding of semiconductor elements using a lead-free solder material. In addition, a semiconductor device with high bonding position accuracy of semiconductor elements can be obtained.
本発明にかかる半導体装置およびその製造方法によれば、鉛を含まない接合材料により、半導体素子の表面電極に配線用導体が面接合され、かつ半導体素子が高い位置精度で導体基板に接合された半導体装置が得られるという効果を奏する。 According to the semiconductor device and the manufacturing method thereof according to the present invention, the wiring conductor is surface-bonded to the surface electrode of the semiconductor element and the semiconductor element is bonded to the conductor substrate with high positional accuracy by the bonding material not containing lead. There is an effect that a semiconductor device can be obtained.
以下に添付図面を参照して、この発明にかかる半導体装置およびその製造方法の好適な実施の形態を詳細に説明する。以下の実施の形態の説明および添付図面において、同様の構成には同一の符号を付し、重複する説明を省略する。 Exemplary embodiments of a semiconductor device and a method for manufacturing the same according to the present invention will be explained below in detail with reference to the accompanying drawings. In the following description of the embodiments and the accompanying drawings, the same reference numerals are given to the same components, and overlapping descriptions are omitted.
実施の形態1.
図1は、本発明の実施の形態1にかかる半導体装置の要部を示す正面図である。図1に示すように、半導体素子14の裏面電極(図示省略)は、導体基板12の表面に金属微粒子の焼結体17よりなる接合部材を介して接合されている。その半導体素子14の表面電極(図示省略)には、配線用導体16が鉛フリーはんだ材料15を介して接合されている。ここで、配線用導体16と半導体素子14の表面電極(図示省略)は面接合しており、その接合面積は、従来のワイヤボンディング法によるワイヤの接着面積よりも大きい。
Embodiment 1 FIG.
FIG. 1 is a front view showing the main part of the semiconductor device according to the first embodiment of the present invention. As shown in FIG. 1, the back electrode (not shown) of the
金属微粒子の焼結体17は、例えばAg、CuおよびNiのうちの1または2以上の金属の微粒子を焼結したものである。この焼結体17の溶融点は、焼結体を構成する金属の本来の溶融点と同じであるので、鉛フリーはんだ材料の溶融点よりも高い。鉛フリーはんだ材料15は、例えばSnAg系、SnSb系またはSnCu系のはんだ材料である。例えばSnAgはんだ材料15の溶融点は220℃である。
The
次に、本発明の実施の形態1にかかる半導体装置の製造方法について説明する。特に限定しないが、ここでは、金属微粒子の焼結体17を構成する金属をAgとし、鉛フリーはんだ材料15をSn3.5Ag0.5Cuはんだ材料とする。図2は、本発明の実施の形態1にかかる半導体装置の製造方法を示すフローチャートである。
Next, a method for manufacturing the semiconductor device according to the first embodiment of the present invention will be described. Although not particularly limited, here, the metal constituting the
図2に示すように、まず、導体基板12の表面にAg微粒子を含むペースト(以下、Ag微粒子ペーストとする)を塗布する(ステップS1)。このAg微粒子ペーストは、直径が1〜100nm程度のAg微粒子と、このAg微粒子に対して配位的結合により安定した保護皮膜を形成する有機溶媒を混合したものである。微粒子の表面が活性化しており、微粒子同士が凝集しやすい状態にあるため、微粒子を有機溶媒中に分散させて安定化させる必要がある。 As shown in FIG. 2, first, a paste containing Ag fine particles (hereinafter referred to as Ag fine particle paste) is applied to the surface of the conductor substrate 12 (step S1). This Ag fine particle paste is a mixture of Ag fine particles having a diameter of about 1 to 100 nm and an organic solvent that forms a stable protective film by coordinate bond with the Ag fine particles. Since the surfaces of the fine particles are activated and the fine particles are likely to aggregate, it is necessary to stabilize the fine particles by dispersing them in an organic solvent.
その後、半導体素子14の裏面電極が導体基板12上のAg微粒子ペーストに接触するように、導体基板12の上に半導体素子14を置く(ステップS2)。そして、例えば250℃に加熱した状態で半導体素子14を導体基板12に押し付けるように加圧する(ステップS3)。これにより、有機溶媒が気化し、Ag微粒子が焼結され、導体基板12と半導体素子14がそのAg微粒子の焼結体17を介して接合される。
Thereafter, the
冷却後、半導体素子14の表面電極の表面にSn3.5Ag0.5Cuはんだペーストを例えば100μmの厚さに塗布する(ステップS4)。そして、そのはんだペーストに配線用導体16の被接合面が接触するように、半導体素子14の上に配線用導体16を置く(ステップS5)。その状態で、導体基板12、半導体素子14および配線用導体16を電気炉に入れ、例えば250℃に加熱してはんだペーストを溶融する(ステップS6)。その後、冷却して、溶けたはんだペーストを凝固させる。それによって、配線用導体16が半導体素子14に鉛フリーはんだ材料15により接合され、図1に示す構成の半導体装置が得られる。
After cooling, Sn3.5Ag0.5Cu solder paste is applied to the surface of the surface electrode of the
実施の形態1によれば、はんだ接合する際、Ag微粒子の焼結体17の溶融点が250℃よりも高いので、Ag微粒子の焼結体17は溶けない。従って、はんだペーストが溶けた状態のときに半導体素子14が導体基板12に固定されているので、半導体素子14の動きが抑制され、半導体素子14の接合位置精度の高い半導体装置が得られる。また、半導体素子14と導体基板12をAg微粒子ペーストを用いて接合することにより、それらをはんだ材料を用いて接合する場合よりも熱伝導性が向上するので、半導体素子14の温度が上昇するのを抑制することができる。
According to the first embodiment, since the melting point of the Ag fine particle sintered
実施の形態2.
図3は、本発明の実施の形態2にかかる半導体装置の要部を示す正面図である。図3に示すように、実施の形態2では、導体基板12の表面と半導体素子14の裏面電極(図示省略)が鉛フリーはんだ材料15を介して接合されており、半導体素子14の表面電極(図示省略)と配線用導体16が金属微粒子の焼結体17を介して接合されている。その他の構成については、実施の形態1と同じであるので、説明を省略する。
Embodiment 2. FIG.
FIG. 3 is a front view showing the main part of the semiconductor device according to the second embodiment of the present invention. As shown in FIG. 3, in the second embodiment, the surface of the
次に、本発明の実施の形態2にかかる半導体装置の製造方法について説明する。特に限定しないが、実施の形態1と同様に、金属微粒子の焼結体17を構成する金属をAgとし、鉛フリーはんだ材料15をSn3.5Ag0.5Cuはんだ材料とする。図4は、本発明の実施の形態2にかかる半導体装置の製造方法を示すフローチャートである。
Next, a method for manufacturing the semiconductor device according to the second embodiment of the present invention will be described. Although it does not specifically limit, the metal which comprises the sintered compact 17 of metal fine particles is set to Ag similarly to Embodiment 1, and the lead
図4に示すように、まず、半導体素子14の表面電極の表面に実施の形態1と同様のAg微粒子ペーストを塗布する(ステップS11)。そして、そのAg微粒子ペーストに配線用導体16の被接合面が接触するように、半導体素子14の上に配線用導体16を置く(ステップS12)。次いで、例えば250℃に加熱した状態で配線用導体16を半導体素子14に押し付けるように加圧する(ステップS13)。これにより、有機溶媒が気化し、Ag微粒子が焼結され、半導体素子14と配線用導体16がAg微粒子の焼結体17を介して接合される。
As shown in FIG. 4, first, an Ag fine particle paste similar to that of the first embodiment is applied to the surface of the surface electrode of the semiconductor element 14 (step S11). Then, the
冷却後、導体基板12の表面にSn3.5Ag0.5Cuはんだペーストを例えば100μmの厚さに塗布する(ステップS14)。そして、そのはんだペーストに半導体素子14の裏面電極が接触するように、導体基板12の上に半導体素子14を置く(ステップS15)。その状態で、実施の形態1と同様に、電気炉で例えば250℃に加熱してはんだペーストを溶融する(ステップS16)。その後、冷却して、溶けたはんだペーストを凝固させる。それによって、半導体素子14が導体基板12に鉛フリーはんだ材料15により接合され、図3に示す構成の半導体装置が得られる。
After cooling, Sn3.5Ag0.5Cu solder paste is applied to the surface of the
実施の形態2によれば、はんだペーストが溶けた状態のときに半導体素子14が配線用導体16に固定されているので、半導体素子14の動きが抑制され、半導体素子14の接合位置精度の高い半導体装置が得られる。また、半導体素子14と配線用導体16をAg微粒子ペーストを用いて接合することにより、それらをはんだ材料を用いて接合する場合よりも熱伝導性が向上するので、半導体素子14の温度が上昇するのを抑制することができる。
According to the second embodiment, since the
実施の形態3.
図5は、本発明の実施の形態3にかかる半導体装置の要部を示す正面図である。図5に示すように、実施の形態3では、導体基板12の表面と半導体素子14の裏面電極(図示省略)、および半導体素子14の表面電極(図示省略)と配線用導体16がともに金属微粒子の焼結体17を介して接合されている。その他の構成については、実施の形態1と同じであるので、説明を省略する。
Embodiment 3 FIG.
FIG. 5 is a front view showing a main part of the semiconductor device according to the third embodiment of the present invention. As shown in FIG. 5, in the third embodiment, the surface of the
次に、本発明の実施の形態3にかかる半導体装置の製造方法について説明する。特に限定しないが、実施の形態1と同様に、金属微粒子の焼結体17を構成する金属をAgとし、鉛フリーはんだ材料15をSn3.5Ag0.5Cuはんだ材料とする。図6は、本発明の実施の形態3にかかる半導体装置の製造方法を示すフローチャートである。
Next, a method for manufacturing the semiconductor device according to the third embodiment of the present invention will be described. Although it does not specifically limit, the metal which comprises the sintered compact 17 of metal fine particles is set to Ag similarly to Embodiment 1, and the lead
図6に示すように、まず、導体基板12の表面に実施の形態1と同様のAg微粒子ペーストを塗布する(ステップS21)。そして、半導体素子14の裏面電極が導体基板12上のAg微粒子ペーストに接触するように、導体基板12の上に半導体素子14を置く(ステップS22)。続いて、半導体素子14の表面電極の表面にAg微粒子ペーストを塗布する(ステップS23)。
As shown in FIG. 6, first, an Ag fine particle paste similar to that of the first embodiment is applied to the surface of the conductor substrate 12 (step S21). Then, the
そして、そのAg微粒子ペーストに配線用導体16の被接合面が接触するように、半導体素子14の上に配線用導体16を置く(ステップS24)。その状態で、例えば250℃に加熱した状態で配線用導体16と導体基板12を半導体素子14に押し付けるように加圧する(ステップS25)。これにより、有機溶媒が気化し、Ag微粒子が焼結され、半導体素子14と導体基板12、および半導体素子14と配線用導体16がそれぞれAg微粒子の焼結体17を介して接合され、図5に示す構成の半導体装置が得られる。
Then, the
実施の形態3によれば、半導体素子14と導体基板12、および半導体素子14と配線用導体16の接合にはんだ材料を用いていないので、Ag微粒子ペーストを焼結する際に、はんだ材料が溶融したときのはんだの表面張力が要因で半導体素子が動くという現象が起こるのを防ぐことができる。また、Ag微粒子の焼結による接合では、はんだ材料のようにAg微粒子が溶融した状態になるわけではないので、半導体素子14の上下のAg微粒子ペーストを同時に焼成しても、半導体素子14の動きは起こらない。従って、半導体素子14の接合位置精度の高い半導体装置が得られる。さらに、半導体素子14と導体基板12、および半導体素子14と配線用導体16をともにAg微粒子ペーストを用いて接合することにより、それらをはんだ材料を用いて接合する場合よりも熱伝導性が向上するので、半導体素子14の温度が上昇するのを抑制することができる。
According to the third embodiment, since no solder material is used for joining the
実施の形態4.
図7は、本発明の実施の形態4にかかる半導体装置の要部を示す正面図である。図7に示すように、実施の形態4では、半導体パッケージの外部冷却体への熱導体となる例えば金属基板よりなる熱伝導部材18の表面に、アルミナ等からなる絶縁基板11の裏面に設けられた熱伝導体13の裏面が鉛フリーはんだ材料15を介して接合されている。そして、絶縁基板11の表面に設けられた導体基板12の表面に実施の形態1の半導体装置(図1参照)が接合されている。導体基板12は、絶縁基板11の表面の電気回路を兼ねている。導体基板12上の半導体装置の構成については、実施の形態1と同じであるので、説明を省略する。
Embodiment 4 FIG.
FIG. 7 is a front view showing the main part of the semiconductor device according to the fourth embodiment of the present invention. As shown in FIG. 7, in the fourth embodiment, the heat
次に、本発明の実施の形態4にかかる半導体装置の製造方法について説明する。特に限定しないが、実施の形態1と同様に、金属微粒子の焼結体17を構成する金属をAgとし、鉛フリーはんだ材料15をSn3.5Ag0.5Cuはんだ材料とする。図8は、本発明の実施の形態4にかかる半導体装置の製造方法を示すフローチャートである。
Next, the manufacturing method of the semiconductor device concerning Embodiment 4 of the present invention is explained. Although it does not specifically limit, the metal which comprises the sintered compact 17 of metal fine particles is set to Ag similarly to Embodiment 1, and the lead
図8に示すように、まず、実施の形態1と同様にして、絶縁基板11の表面、すなわち導体基板12の表面に実施の形態1と同様のAg微粒子ペーストを塗布する(ステップS31)。そして、そのAg微粒子ペースト上に半導体素子14を置く(ステップS32)。続いて、例えば250℃に加熱した状態で加圧してAg微粒子を焼成し(ステップS33)、そのAg微粒子の焼結体17を介して絶縁基板11に半導体素子14を接合する。
As shown in FIG. 8, first, the same Ag fine particle paste as in the first embodiment is applied to the surface of the insulating
冷却後、熱伝導部材18の表面にSn3.5Ag0.5Cuはんだペーストを例えば100μmの厚さに塗布する(ステップS34)。そして、そのはんだペーストに絶縁基板11の裏面、すなわち熱伝導体13が接触するように、熱伝導部材18の上に絶縁基板11を置く(ステップS35)。続いて、半導体素子14の表面電極の表面にSn3.5Ag0.5Cuはんだペーストを例えば100μmの厚さに塗布する(ステップS36)。
After cooling, Sn3.5Ag0.5Cu solder paste is applied to the surface of the
そして、そのはんだペーストに配線用導体16の被接合面が接触するように、半導体素子14の上に配線用導体16を置く(ステップS37)。その状態で、実施の形態1と同様に、電気炉で例えば250℃に加熱してはんだペーストを溶融する(ステップS38)。その後、冷却して、溶けたはんだペーストを凝固させると、図7に示す構成の半導体装置が得られる。
Then, the
実施の形態4によれば、はんだペーストが溶けた状態のときに半導体素子14が絶縁基板11の導体基板12に固定されているので、半導体素子14の動きが抑制され、半導体素子14の接合位置精度の高い半導体装置が得られる。また、半導体素子14と絶縁基板11の導体基板12をはんだ材料を用いて接合する場合よりも熱伝導性が向上するので、半導体素子14の温度が上昇するのを抑制することができる。
According to the fourth embodiment, since the
実施の形態5.
図9は、本発明の実施の形態5にかかる半導体装置の要部を示す正面図である。図9に示すように、実施の形態5は、実施の形態4において、絶縁基板11の導体基板12の表面に実施の形態2の半導体装置(図3参照)を接合したものである。導体基板12上の半導体装置の構成については、実施の形態2と同じである。その他の構成は、実施の形態4と同じである。従って、それらの説明を省略する。
FIG. 9 is a front view showing the main part of the semiconductor device according to the fifth embodiment of the present invention. As shown in FIG. 9, in the fifth embodiment, the semiconductor device of the second embodiment (see FIG. 3) is bonded to the surface of the
次に、本発明の実施の形態5にかかる半導体装置の製造方法について説明する。特に限定しないが、実施の形態1と同様に、金属微粒子の焼結体17を構成する金属をAgとし、鉛フリーはんだ材料15をSn3.5Ag0.5Cuはんだ材料とする。図10は、本発明の実施の形態5にかかる半導体装置の製造方法を示すフローチャートである。
Next, a method for manufacturing a semiconductor device according to the fifth embodiment of the present invention will be described. Although it does not specifically limit, the metal which comprises the sintered compact 17 of metal fine particles is set to Ag similarly to Embodiment 1, and the lead
図10に示すように、まず、実施の形態2と同様にして、半導体素子14の表面電極の表面に実施の形態1と同様のAg微粒子ペーストを塗布する(ステップS41)。そして、そのAg微粒子ペースト上に配線用導体16を置く(ステップS42)。続いて、例えば250℃に加熱した状態で加圧してAg微粒子を焼成し(ステップS43)、そのAg微粒子の焼結体17を介して半導体素子14に配線用導体16を接合する。
As shown in FIG. 10, first, in the same manner as in the second embodiment, the same Ag fine particle paste as in the first embodiment is applied to the surface of the surface electrode of the semiconductor element 14 (step S41). Then, the
冷却後、熱伝導部材18の表面にSn3.5Ag0.5Cuはんだペーストを例えば100μmの厚さに塗布し(ステップS44)、そのはんだペースト上に絶縁基板11を、絶縁基板11の熱伝導体13がはんだペーストに接触するように置く(ステップS45)。続いて、絶縁基板11の導体基板12の表面にSn3.5Ag0.5Cuはんだペーストを例えば100μmの厚さに塗布する(ステップS46)。
After cooling, Sn3.5Ag0.5Cu solder paste is applied to the surface of the
そして、そのはんだペースト上に半導体素子14を、半導体素子14の裏面電極がはんだペーストに接触するように置く(ステップS47)。その状態で、実施の形態1と同様に、電気炉で例えば250℃に加熱してはんだペーストを溶融する(ステップS48)。その後、冷却して、溶けたはんだペーストを凝固させると、図9に示す構成の半導体装置が得られる。
Then, the
実施の形態5によれば、はんだペーストが溶けた状態のときに半導体素子14が配線用導体16に固定されているので、半導体素子14の動きが抑制され、半導体素子14の接合位置精度の高い半導体装置が得られる。また、半導体素子14と配線用導体16をはんだ材料を用いて接合する場合よりも熱伝導性が向上するので、半導体素子14の温度が上昇するのを抑制することができる。
According to the fifth embodiment, since the
以上において本発明は、上述した実施の形態に限らず、種々変更可能である。例えば、金属微粒子は、はんだペーストによるはんだ接合温度で溶融しなければ、Ag以外の金属で構成されていてもよい。例えば、CuやNiでもよい。また、はんだ材料は、SnSb系、SnCu系など、Ag等の金属微粒子の焼結状態に悪影響を及ぼさない成分のものであればよい。さらに、はんだ材料は、クリーム状のものでなくてもよく、例えば還元雰囲気中で板材のものでもよい。 As described above, the present invention is not limited to the above-described embodiment, and various modifications can be made. For example, the metal fine particles may be composed of a metal other than Ag as long as it does not melt at the soldering temperature with the solder paste. For example, Cu or Ni may be used. The solder material may be any component that does not adversely affect the sintered state of metal fine particles such as Ag, such as SnSb and SnCu. Furthermore, the solder material does not have to be creamy, and may be, for example, a plate material in a reducing atmosphere.
以上のように、本発明にかかる半導体装置およびその製造方法は、半導体素子の表面電極と配線用導体が面接合された構成を有する半導体装置に有用であり、特に、通電時の発熱量が多いパワー半導体装置に適している。 As described above, the semiconductor device and the manufacturing method thereof according to the present invention are useful for a semiconductor device having a configuration in which a surface electrode of a semiconductor element and a wiring conductor are surface-bonded, and in particular, a large amount of heat is generated during energization. Suitable for power semiconductor devices.
11 絶縁基板
12 導体基板
13 熱伝導体
14 半導体素子
15 鉛フリーはんだ材料
16 配線用導体
17 金属微粒子の焼結体
18 熱伝導部材
DESCRIPTION OF
Claims (14)
前記裏面電極と前記導体基板を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記表面電極と前記配線用導体をはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする半導体装置の製造方法。 In manufacturing a semiconductor device in which a back electrode of a semiconductor element and a conductor substrate are joined via a sintered body of metal fine particles, and a front electrode of the semiconductor element and a conductor for wiring are joined via a solder material,
The back electrode and the conductor substrate are bonded to each other through a paste containing metal fine particles and bonded by heating to sinter the metal fine particles, and then the front electrode and the wiring conductor are connected via a solder material. A method for manufacturing a semiconductor device, characterized by bonding and heating to bond.
前記表面電極と前記配線用導体を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記裏面電極と前記導体基板をはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする半導体装置の製造方法。 In manufacturing a semiconductor device in which the surface electrode of the semiconductor element and the conductor for wiring are joined through a sintered body of metal fine particles, and the back electrode of the semiconductor element and the conductor substrate are joined through a solder material,
The surface electrode and the wiring conductor are bonded together via a paste containing metal fine particles and bonded by heating to sinter the metal fine particles, and then the back electrode and the conductor substrate are bonded via a solder material. A method for manufacturing a semiconductor device, characterized by bonding and heating to bond.
前記裏面電極と前記導体基板、および前記表面電極と配線用導体を、それぞれ金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合することを特徴とする半導体装置の製造方法。 In manufacturing a semiconductor device in which a back electrode of a semiconductor element and a conductor substrate, and a front electrode of the semiconductor element and a conductor for wiring are bonded together through a sintered body of metal fine particles,
A semiconductor comprising: bonding the back electrode and the conductor substrate, and the front electrode and the wiring conductor through a paste containing metal fine particles, respectively, and heating to sinter the metal fine particles. Device manufacturing method.
前記裏面電極と前記導体基板を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記表面電極と前記配線用導体、および前記熱伝導体と前記熱伝導部材を、それぞれはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする半導体装置の製造方法。 The front electrode of the semiconductor element and the conductor for wiring are joined via a solder material, the back electrode of the semiconductor element and the conductor substrate provided on the surface of the insulating substrate are joined via a sintered body of metal fine particles, In manufacturing a semiconductor device in which a heat conductor and a heat conductive member provided on the back surface of an insulating substrate are joined via a solder material,
The back electrode and the conductor substrate are bonded to each other through a paste containing metal fine particles and bonded by heating to sinter the metal fine particles, and then the front electrode, the conductor for wiring, and the heat conductor A method for manufacturing a semiconductor device, comprising: bonding a heat conductive member and a heat conducting member together through a solder material, and heating to bond.
前記表面電極と前記配線用導体を、金属微粒子を含むペーストを介して貼り合わせ、加熱して前記金属微粒子を焼結させることにより接合した後に、前記裏面電極と前記導体基板、および前記熱伝導体と前記熱伝導部材を、それぞれはんだ材料を介して貼り合わせ、加熱して接合することを特徴とする半導体装置の製造方法。 The surface electrode of the semiconductor element and the conductor for wiring are joined via a sintered body of metal fine particles, the back electrode of the semiconductor element and the conductor substrate provided on the surface of the insulating substrate are joined via a solder material, In manufacturing a semiconductor device in which a heat conductor and a heat conductive member provided on the back surface of an insulating substrate are joined via a solder material,
The back electrode, the conductor substrate, and the heat conductor are bonded to each other by bonding the surface electrode and the wiring conductor through a paste containing metal fine particles and heating to sinter the metal fine particles. A method for manufacturing a semiconductor device, comprising: bonding a heat conductive member and a heat conducting member together through a solder material, and heating to bond.
13. The method of manufacturing a semiconductor device according to claim 8, wherein the solder material is a SnAg-based, SnSb-based, or SnCu-based solder material that does not contain lead.
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