JP2006253662A5 - - Google Patents

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Publication number
JP2006253662A5
JP2006253662A5 JP2006029198A JP2006029198A JP2006253662A5 JP 2006253662 A5 JP2006253662 A5 JP 2006253662A5 JP 2006029198 A JP2006029198 A JP 2006029198A JP 2006029198 A JP2006029198 A JP 2006029198A JP 2006253662 A5 JP2006253662 A5 JP 2006253662A5
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JP
Japan
Prior art keywords
layer
conductive layer
liquid repellent
memory element
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006029198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006253662A (ja
JP4884791B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2006029198A priority Critical patent/JP4884791B2/ja
Priority claimed from JP2006029198A external-priority patent/JP4884791B2/ja
Publication of JP2006253662A publication Critical patent/JP2006253662A/ja
Publication of JP2006253662A5 publication Critical patent/JP2006253662A5/ja
Application granted granted Critical
Publication of JP4884791B2 publication Critical patent/JP4884791B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006029198A 2005-02-10 2006-02-07 記憶素子及びその作製方法 Expired - Fee Related JP4884791B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006029198A JP4884791B2 (ja) 2005-02-10 2006-02-07 記憶素子及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005035266 2005-02-10
JP2005035266 2005-02-10
JP2006029198A JP4884791B2 (ja) 2005-02-10 2006-02-07 記憶素子及びその作製方法

Publications (3)

Publication Number Publication Date
JP2006253662A JP2006253662A (ja) 2006-09-21
JP2006253662A5 true JP2006253662A5 (enExample) 2009-03-05
JP4884791B2 JP4884791B2 (ja) 2012-02-29

Family

ID=37093750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006029198A Expired - Fee Related JP4884791B2 (ja) 2005-02-10 2006-02-07 記憶素子及びその作製方法

Country Status (1)

Country Link
JP (1) JP4884791B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5382037B2 (ja) * 2011-03-17 2014-01-08 ブラザー工業株式会社 レンチキュラーシート及びレンチキュラーシートの製造方法
JP2019145546A (ja) * 2018-02-16 2019-08-29 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
DE102020133314A1 (de) * 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. 3d-speicher mit leitfähigen graphitstreifen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4010091B2 (ja) * 2000-03-23 2007-11-21 セイコーエプソン株式会社 メモリデバイスおよびその製造方法

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