JP2006253661A5 - - Google Patents

Download PDF

Info

Publication number
JP2006253661A5
JP2006253661A5 JP2006029163A JP2006029163A JP2006253661A5 JP 2006253661 A5 JP2006253661 A5 JP 2006253661A5 JP 2006029163 A JP2006029163 A JP 2006029163A JP 2006029163 A JP2006029163 A JP 2006029163A JP 2006253661 A5 JP2006253661 A5 JP 2006253661A5
Authority
JP
Japan
Prior art keywords
conductive layer
layer
insulating layer
semiconductor device
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006029163A
Other languages
English (en)
Japanese (ja)
Other versions
JP4932268B2 (ja
JP2006253661A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006029163A priority Critical patent/JP4932268B2/ja
Priority claimed from JP2006029163A external-priority patent/JP4932268B2/ja
Publication of JP2006253661A publication Critical patent/JP2006253661A/ja
Publication of JP2006253661A5 publication Critical patent/JP2006253661A5/ja
Application granted granted Critical
Publication of JP4932268B2 publication Critical patent/JP4932268B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006029163A 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法 Expired - Fee Related JP4932268B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006029163A JP4932268B2 (ja) 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005035258 2005-02-10
JP2005035258 2005-02-10
JP2006029163A JP4932268B2 (ja) 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006253661A JP2006253661A (ja) 2006-09-21
JP2006253661A5 true JP2006253661A5 (https=) 2009-03-26
JP4932268B2 JP4932268B2 (ja) 2012-05-16

Family

ID=37093749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006029163A Expired - Fee Related JP4932268B2 (ja) 2005-02-10 2006-02-07 半導体装置、及び半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4932268B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101169395B1 (ko) * 2006-10-13 2012-07-30 삼성전자주식회사 상변화층의 표면처리공정을 포함하는 상변화 메모리 소자의제조방법
JP2019145546A (ja) * 2018-02-16 2019-08-29 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP6622940B1 (ja) * 2019-07-02 2019-12-18 株式会社日立パワーソリューションズ 両面実装基板、両面実装基板の製造方法、および半導体レーザ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722669A (ja) * 1993-07-01 1995-01-24 Mitsubishi Electric Corp 可塑性機能素子
JP3104843B2 (ja) * 1994-08-19 2000-10-30 川崎製鉄株式会社 アンチヒューズ型半導体集積回路装置
CN100380596C (zh) * 2003-04-25 2008-04-09 株式会社半导体能源研究所 液滴排出装置、图案的形成方法及半导体装置的制造方法
JP2005019955A (ja) * 2003-05-30 2005-01-20 Seiko Epson Corp 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器

Similar Documents

Publication Publication Date Title
JP2007096055A5 (https=)
WO2008078516A1 (ja) 酸化シリコン薄膜の製造装置及び形成方法
KR101063361B1 (ko) 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판
WO2008114564A1 (ja) 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2011506457A5 (https=)
MX2009011954A (es) Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia.
TW200605395A (en) Method of fabricating an optoelectronic device having a bulk heterojunction
WO2009066561A1 (ja) 有機エレクトロルミネッセンス装置およびその製造方法
WO2006036366A3 (en) Method of forming a solution processed device
JP2010527508A5 (https=)
JP2008517743A5 (https=)
WO2008133737A3 (en) Electrochromic device
JP2010505264A5 (https=)
EP2423951A3 (en) Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof
JP2003163337A5 (https=)
CN104409663B (zh) 封装方法、封装结构及显示装置
JP2009545878A5 (https=)
EP1806794A3 (en) Method for manufacturing semiconductor device
JP2009278072A5 (https=)
JP2009134274A5 (https=)
JP2011009723A5 (https=)
JP6857750B2 (ja) Ｔｆｔ基板の製造方法
JP2006100808A5 (https=)
JP2009501432A5 (https=)
WO2015076358A1 (ja) 配線パターンの製造方法およびトランジスタの製造方法