JP2006253374A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device Download PDF

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Publication number
JP2006253374A
JP2006253374A JP2005067086A JP2005067086A JP2006253374A JP 2006253374 A JP2006253374 A JP 2006253374A JP 2005067086 A JP2005067086 A JP 2005067086A JP 2005067086 A JP2005067086 A JP 2005067086A JP 2006253374 A JP2006253374 A JP 2006253374A
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Prior art keywords
resin
die pad
semiconductor device
bonding
bonding wire
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JP2005067086A
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Japanese (ja)
Inventor
Daisuke Nagahama
大介 長濱
Hisaaki Okada
尚晃 岡田
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2005067086A priority Critical patent/JP2006253374A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin sealed semiconductor device wherein a bonding wire on a die pad is prevented from being disconnected by thermal stress and wire non-attaching upon bonding of both of the die pad, and an electrode pad, is unlikely to occur. <P>SOLUTION: A groove 6 is provided between an end B of a semiconductor chip 2 on the die pad 1 and an end C of the bonding wire 3. It is hereby possible to prevent peeling occurring at the B between sealing resin 5 and the die pad 1 from advancing to the C, and hence to prevent the bonding wire 3 on the die pad 1 from being disconnected. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

本発明は樹脂封止型半導体装置に関し、特にリードフレームの構造に関するものである。   The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a structure of a lead frame.

以下従来の樹脂封止型半導体装置について図３を用いて説明する。   Hereinafter, a conventional resin-encapsulated semiconductor device will be described with reference to FIG.

図４は従来の樹脂封止型半導体装置の構造を示す説明図であり、図４（ａ）は平面図、図４（ｂ）は図４（ａ）のａ−ａ’線に沿って切断した断面図である。図４において、１０１はダイパッド、１０２は半導体チップ、１０３はボンディングワイヤー、１０４は電極パッド、１０５は封止樹脂である。   4A and 4B are explanatory views showing the structure of a conventional resin-encapsulated semiconductor device, in which FIG. 4A is a plan view, and FIG. 4B is cut along the line aa ′ in FIG. FIG. In FIG. 4, 101 is a die pad, 102 is a semiconductor chip, 103 is a bonding wire, 104 is an electrode pad, and 105 is a sealing resin.

従来の樹脂封止型半導体装置におけるリードフレームのダイパッドに関しては、図４に示すように、ダイパッド１０１の外周部に溝を設ける等、リードフレームの表面に凹凸を付けることにより、リードフレームと樹脂との密着性を向上させる、あるいは樹脂が吸湿して水分が気化膨張した際に発生する応力を緩和させるといった手法が用いられていた。
特開平５−９５０７７号公報 With respect to the die pad of the lead frame in the conventional resin-encapsulated semiconductor device, as shown in FIG. A technique has been used in which the adhesiveness of the resin is improved, or the stress generated when moisture is vaporized and expanded due to moisture absorption by the resin has been used.
JP-A-5-95077

しかしながら、前述の従来技術においては、図４に示すようにダイパッド上にワイヤーボンディングを行う際に、次のような課題があった。   However, the prior art described above has the following problems when wire bonding is performed on a die pad as shown in FIG.

１）ダイパッド１０１上の半導体チップ１０２の端部ｂとボンディングワイヤー１０３の端部ｃとの間のダイパッド形状が平坦な構造となるため、半導体チップ１０２の端部ｂをトリガーとして、封止樹脂１０５とダイパッド１０１との間に剥離が発生した際には、その剥離がボンディングワイヤー１０３の端部ｃまで進行し、ボンディングワイヤー１０３が封止樹脂１０５とともにダイパッド１０１から外れてしまう。   1) Since the die pad shape between the end b of the semiconductor chip 102 on the die pad 101 and the end c of the bonding wire 103 is flat, the sealing resin 105 is triggered by the end b of the semiconductor chip 102 as a trigger. When peeling occurs between the die pad 101 and the die pad 101, the peeling proceeds to the end c of the bonding wire 103, and the bonding wire 103 is detached from the die pad 101 together with the sealing resin 105.

２）ダイパッド１０１と電極パッド１０４とでは一般的にダイパッド１０１の方が大きな面積を有しており、ワイヤーボンディング時にかかる応力に対して歪む量が電極パッド１０４と比較して小さいため、ダイパッド１０１と電極パッド１０４とにワイヤーボンディングを行う際に同一の条件でボンディングを行うと、ダイパッド１０１または電極パッドのいずれかのボンディングワイヤー１０３の不着が生じやすい。   2) The die pad 101 and the electrode pad 104 generally have a larger area, and the amount of distortion due to stress applied during wire bonding is smaller than that of the electrode pad 104. If wire bonding is performed to the electrode pad 104 under the same conditions, the bonding wire 103 of either the die pad 101 or the electrode pad is likely not to be attached.

本発明は、このような問題を解決し、半導体チップ端部をトリガーとして発生した樹脂、ダイパッド間の剥離がボンディングワイヤー端部まで進行することを防ぐことを実現した樹脂封止型半導体装置を提供することを目的とする。   The present invention provides a resin-encapsulated semiconductor device that solves such a problem and realizes prevention of the separation between the resin and die pads generated using the semiconductor chip end as a trigger to the bonding wire end. The purpose is to do.

前記目的を達成するため、本発明は、２種類以上の異なる材料を接合して作製される樹脂封止型半導体装置において、前記２種類以上の材料の接合面の一部に、接合面の剥離の進行を妨げる機能を有する接合部を備えたことを特徴とする。   In order to achieve the above object, the present invention provides a resin-sealed semiconductor device manufactured by bonding two or more types of different materials, and the bonding surface is peeled off at a part of the bonding surfaces of the two or more types of materials. It has the junction part which has a function which prevents progress of this.

また本発明は、ボンディングワイヤー周辺の樹脂の剥離の進行を妨げることを特徴とする。   Further, the present invention is characterized in that the progress of the peeling of the resin around the bonding wire is prevented.

また本発明は、前記接合部が、前記ダイパッドと前記ボンディングワイヤーとの接続部と、前記半導体チップとの間における樹脂の剥離の進行を妨げることを特徴とする。   Further, the present invention is characterized in that the bonding portion prevents progress of resin peeling between the connection portion between the die pad and the bonding wire and the semiconductor chip.

また本発明は、前記接合部として、前記ダイパッドと前記ボンディングワイヤーとの接続部と、前記半導体チップとの間に溝を形成したことを特徴とする。   The present invention is characterized in that a groove is formed between the semiconductor chip and the connecting portion between the die pad and the bonding wire as the bonding portion.

また本発明は、前記ダイパッドの外周部に、前記ダイパッドと全て電気的に絶縁されている電極パッドを設け、前記ダイパッド上に前記半導体チップと前記ボンディングワイヤーとを配置しかつ接続し、前記半導体チップの配置部と前記ボンディングワイヤーとの接続部との間に樹脂剥離防止部を有することを特徴とする。   According to the present invention, an electrode pad that is electrically insulated from the die pad is provided on an outer peripheral portion of the die pad, and the semiconductor chip and the bonding wire are disposed on and connected to the die pad. It has a resin peeling prevention part between the arrangement | positioning part of this and the connection part of the said bonding wire, It is characterized by the above-mentioned.

また本発明は、前記ダイパッドと前記ボンディングワイヤーとの接続部の周辺部に溝を形成し、フレーム状態での前記樹脂封止型半導体装置の電極パッドと前記ダイパッド上に接続されるボンディングワイヤー周辺部とのばね定数を等しくしたことを特徴とする。   Further, the present invention provides a bonding wire peripheral portion connected to the electrode pad and the die pad of the resin-encapsulated semiconductor device in a frame state by forming a groove in the peripheral portion of the connection portion between the die pad and the bonding wire. The spring constants are equal to each other.

このように本発明における樹脂封止型半導体装置は、ダイパッド上の半導体チップ端部とボンディングワイヤー端部間、あるいはボンディングワイヤー周辺部に樹脂の剥離の進行を妨げる機能を備えたものであり、これにより半導体チップ端部をトリガーとして発生した樹脂、ダイパッド間の剥離がボンディングワイヤー端部まで進行することを防ぎ、ボンディングワイヤー外れによる不良の発生を防ぐことが可能となる。   As described above, the resin-encapsulated semiconductor device according to the present invention has a function of preventing the progress of the resin peeling between the semiconductor chip end portion on the die pad and the bonding wire end portion or the bonding wire peripheral portion. Therefore, it is possible to prevent the separation between the resin and the die pad generated using the semiconductor chip end portion as a trigger to proceed to the bonding wire end portion, and to prevent the occurrence of defects due to the bonding wire coming off.

またボンディングワイヤー周辺部に溝を設け、溝の深さ、幅、形状を調整し、ダイパッド上のワイヤーボンディングを行う箇所と電極パッドとの同一応力に対する歪み量を同程度とすることにより、ボンディング時のワイヤー不着を生じにくくすることも可能となる。   Also, by providing grooves around the bonding wire, adjusting the depth, width, and shape of the grooves, and making the amount of strain for the same stress at the wire pad location on the die pad and the electrode pad comparable, It is also possible to make it difficult to cause wire non-bonding.

本発明によれば、ダイパッド上のボンディングワイヤー周辺部に溝を設ける等、樹脂の剥離の進行を妨げる機能を追加することにより、以下の効果が得られる。   According to the present invention, the following effects can be obtained by adding a function that prevents the progress of the peeling of the resin, such as providing a groove around the bonding wire on the die pad.

１）ボンディングワイヤー外れによる不良の発生を低減させることが可能となる。   1) It is possible to reduce the occurrence of defects due to disconnection of bonding wires.

２）ダイパッド、電極パッドの両者にボンディングを行う際のワイヤー不着が生じにくいリードフレームを提供することが可能となる。   2) It is possible to provide a lead frame in which wire non-bonding hardly occurs when bonding is performed on both the die pad and the electrode pad.

以下、本発明の実施の形態について、図面を用いて詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

（第１の実施形態）
図１は本発明の第１の実施形態における樹脂封止型半導体装置の構造を示す説明図であり、図１（ａ）は平面図、図１（ｂ）は図１（ａ）のＡ−Ａ’線に沿って切断した断面図である。図１において、１はダイパッド、２は半導体チップ、３はボンディングワイヤー、４は電極パッド、５は封止樹脂である。 (First embodiment)
1A and 1B are explanatory views showing the structure of a resin-encapsulated semiconductor device according to a first embodiment of the present invention. FIG. 1A is a plan view, and FIG. It is sectional drawing cut | disconnected along A 'line. In FIG. 1, 1 is a die pad, 2 is a semiconductor chip, 3 is a bonding wire, 4 is an electrode pad, and 5 is a sealing resin.

図１のリードフレームとしては、例えば厚さ０．１ｍｍ〜０．２ｍｍ程度の銅系のリードフレームを用い、パンチングやエッチングにより電極パッド４、ダイパッド１を形成している。   As the lead frame in FIG. 1, for example, a copper lead frame having a thickness of about 0.1 mm to 0.2 mm is used, and the electrode pad 4 and the die pad 1 are formed by punching or etching.

また、ダイパッド１上に接続されたボンディングワイヤー３の端部Ｂとダイパッド１上の半導体チップ２の端部Ｃとの間には、エッチングにより幅０．１ｍｍ、深さ０．０５ｍｍ程度の溝６が形成されている。   A groove 6 having a width of about 0.1 mm and a depth of about 0.05 mm is formed between the end B of the bonding wire 3 connected on the die pad 1 and the end C of the semiconductor chip 2 on the die pad 1 by etching. Is formed.

半導体チップ２は、銀ペースト等の導電性ペーストによりダイパッド１上に固定され、半導体チップ２とダイパッド１とが金からなるボンディングワイヤー３によって接続され、エポキシ樹脂等の封止樹脂５により樹脂封止が行われる。ここで半導体チップ２の大きさは縦×横×高さが０．５ｍｍ×０．４ｍｍ×０．１ｍｍ程度、金ワイヤーの直径は２０μｍ程度であり、本実施の形態における樹脂封止型半導体装置の大きさは縦×横×高さが１．５ｍｍ×１．７ｍｍ×０．４ｍｍ程度である。   The semiconductor chip 2 is fixed on the die pad 1 by a conductive paste such as silver paste, the semiconductor chip 2 and the die pad 1 are connected by a bonding wire 3 made of gold, and resin-sealed by a sealing resin 5 such as an epoxy resin. Is done. Here, the size of the semiconductor chip 2 is vertical × horizontal × height of about 0.5 mm × 0.4 mm × 0.1 mm, and the diameter of the gold wire is about 20 μm. The resin-encapsulated semiconductor device in the present embodiment The size is about 1.5 mm × 1.7 mm × 0.4 mm in height × width × height.

第１の実施の形態においては、図１（ｂ）に示すように、ダイパッド１上の半導体チップ２の端部Ｂとダイパッド１上に接続されたボンディングワイヤー３の端部Ｃとの間にエッチングにより溝６を設けることにより、封止樹脂５が吸湿して水分が気化膨張する等によって図１のＢ部で発生した、封止樹脂５とダイパッド１との間の剥離のＣ部への進行を防ぐことが可能となり、ダイパッド１上のボンディングワイヤー３の外れを防ぐことが可能となる。   In the first embodiment, as shown in FIG. 1B, etching is performed between the end B of the semiconductor chip 2 on the die pad 1 and the end C of the bonding wire 3 connected on the die pad 1. By providing the groove 6, the separation between the sealing resin 5 and the die pad 1, which occurs in the B part of FIG. 1 due to the moisture absorption of the sealing resin 5 and the vaporization and expansion of the moisture, etc., proceeds to the C part. It becomes possible to prevent the bonding wire 3 on the die pad 1 from coming off.

また、前述のようにエッチングによる溝６を設けることにより、従来技術と同様にダイパッド１と封止樹脂５との接触面積が増大し、密着性が向上するという効果も併せ持っている。   Further, by providing the groove 6 by etching as described above, the contact area between the die pad 1 and the sealing resin 5 is increased as in the prior art, and the adhesiveness is improved.

なお、ダイパッド１上の溝６の形状、深さ、製造方法は前述の通りである必要性はなく、樹脂、ダイパッド間の剥離が開始する部位とダイパッド上のボンディングワイヤーとの間に剥離の進行を妨げる機能を有している箇所があれば、同様の効果が得られる。また、図１に示す構成においては、溝６が剥離の進行を妨げる機能を有している箇所に相当するが、剥離の進行を妨げる機能を有するのであれば、溝に限るものではない。   Note that the shape, depth, and manufacturing method of the groove 6 on the die pad 1 do not have to be as described above, and the peeling progresses between the resin and the part where peeling between the die pads starts and the bonding wire on the die pad. The same effect can be obtained if there is a portion having a function of hindering. In the configuration shown in FIG. 1, the groove 6 corresponds to a portion having a function of preventing the progress of peeling, but the groove 6 is not limited to the groove as long as it has a function of preventing the progress of peeling.

例えば、図２（ａ）に示すように溝６の一部をより深くしダイパッドを貫通させた形状とする、図２（ｂ）に示すようにダイパッド１上に突起物７を設ける、図２（ｃ）に示すようにダイパッド１の一部に封止樹脂５との接着性が高い材料８を備える等の手法によっても同様の効果が得られる。   For example, a protrusion 7 is provided on the die pad 1 as shown in FIG. 2B, in which a part of the groove 6 is made deeper and the die pad penetrates as shown in FIG. The same effect can be obtained by a method of providing a material 8 having high adhesion to the sealing resin 5 on a part of the die pad 1 as shown in FIG.

（第２の実施形態）
図３は本発明の第２の実施形態における樹脂封止型半導体装置の構造を示す説明図であり、図３（ａ）は平面図、図３（ｂ）は図３（ａ）のＦ−Ｆ’線に沿って切断した断面図である。図３において、１１はダイパッド、１２は半導体チップ、１３はボンディングワイヤー、１４は電極パッド、１５は封止樹脂である。 (Second Embodiment)
3A and 3B are explanatory views showing the structure of the resin-encapsulated semiconductor device according to the second embodiment of the present invention. FIG. 3A is a plan view, and FIG. 3B is an F- It is sectional drawing cut | disconnected along F 'line. In FIG. 3, 11 is a die pad, 12 is a semiconductor chip, 13 is a bonding wire, 14 is an electrode pad, and 15 is a sealing resin.

ダイパッド１とボンディングワイヤー３との接点Ｈの周辺部に溝１７が形成されており、接点Ｈの周辺部にダイパッド１に対して弾性を有するように構成されている。図３においては、溝１７は矩形であり、Ｇ部側の１辺およびこの１辺の両側辺は貫通しており、Ｇ部側の反対側の１辺の溝１７に所定の厚みを持たせている。   A groove 17 is formed in the periphery of the contact H between the die pad 1 and the bonding wire 3, and the periphery of the contact H is configured to have elasticity with respect to the die pad 1. In FIG. 3, the groove 17 has a rectangular shape, and one side on the G portion side and both sides of the one side penetrate, and the groove 17 on one side on the opposite side to the G portion side has a predetermined thickness. ing.

ここで、フレーム状態での樹脂封止型半導体装置の電極パッド４とダイパッド１１上に接続されるボンディングワイヤー１３周辺部とのばね定数を等しくするように溝１７の形状、深さが調節されている。   Here, the shape and depth of the groove 17 are adjusted so that the spring constants of the electrode pad 4 of the resin-encapsulated semiconductor device in the frame state and the periphery of the bonding wire 13 connected on the die pad 11 are equal. Yes.

このような構成により、第２の実施形態においても第１の実施形態と同様に、図３のＧ部で発生した封止樹脂１５とダイパッド１１間の剥離の進行を防ぐことが可能となり、ダイパッド１１上のボンディングワイヤー１３の外れを防ぐことが可能となる。また、従来技術と同様にダイパッド１１と封止樹脂１５との接触面積が増大し、密着性が向上するという効果が得られる。   With such a configuration, in the second embodiment as well, as in the first embodiment, it is possible to prevent the progress of peeling between the sealing resin 15 and the die pad 11 generated in the portion G in FIG. 11 can prevent the bonding wire 13 from being detached. In addition, the contact area between the die pad 11 and the sealing resin 15 is increased as in the prior art, and the effect of improving the adhesion can be obtained.

また、第２の実施形態においてはさらに、溝の形状、深さを調節し、ダイパッド１１上のワイヤーボンディングを行う箇所と電極パッド４との同一応力に対する歪み量を同程度とすることにより、同一条件でワイヤーボンディングを行う際のワイヤー不着を生じにくくするという効果も得られる。   Further, in the second embodiment, the shape and depth of the groove are further adjusted so that the amount of strain with respect to the same stress in the electrode pad 4 and the portion where wire bonding is performed on the die pad 11 is made the same. The effect of making it hard to produce the wire non-sticking at the time of performing wire bonding on conditions is also acquired.

以上説明したように、本発明は樹脂封止型半導体装置において、ダイパッド上にワイヤーボンディングを行う際の信頼性向上において有用である。   As described above, the present invention is useful in improving reliability when wire bonding is performed on a die pad in a resin-encapsulated semiconductor device.

本発明の第１の実施形態における樹脂封止型半導体装置の要部構成を示す説明図Explanatory drawing which shows the principal part structure of the resin-sealed semiconductor device in the 1st Embodiment of this invention. 本発明の第１の実施形態における樹脂封止型半導体装置の他構成を示す説明図Explanatory drawing which shows the other structure of the resin sealing type semiconductor device in the 1st Embodiment of this invention. 本発明の第２の実施形態における樹脂封止型半導体装置の要部構成を示す説明図Explanatory drawing which shows the principal part structure of the resin-sealed semiconductor device in the 2nd Embodiment of this invention. 従来技術による樹脂封止型半導体装置の要部構成を示す説明図Explanatory drawing which shows the principal part structure of the resin sealing type semiconductor device by a prior art

符号の説明Explanation of symbols

１，１１ ダイパッド
２，１２ 半導体チップ
３，１３ ボンディングワイヤー
４，１４ 電極パッド
５，１５ 封止樹脂
６，１７ 溝
７ 突起物
８ 材料 1,11 Die pad 2,12 Semiconductor chip 3,13 Bonding wire 4,14 Electrode pad 5,15 Sealing resin 6,17 Groove 7 Projection 8 Material

Claims (6)

２種類以上の異なる材料を接合して作製される樹脂封止型半導体装置において、前記２種類以上の材料の接合面の一部に、接合面の剥離の進行を妨げる機能を有する接合部を備えたことを特徴とする樹脂封止型半導体装置。   In a resin-encapsulated semiconductor device manufactured by bonding two or more different materials, a bonding portion having a function of preventing progress of peeling of the bonding surface is provided on a part of the bonding surfaces of the two or more materials. A resin-encapsulated semiconductor device characterized by the above. ボンディングワイヤー周辺の樹脂の剥離の進行を妨げることを特徴とする請求項１記載の樹脂封止型半導体装置。   The resin-encapsulated semiconductor device according to claim 1, wherein the progress of peeling of the resin around the bonding wire is prevented. 前記接合部が、前記ダイパッドと前記ボンディングワイヤーとの接続部と、前記半導体チップとの間における樹脂の剥離の進行を妨げることを特徴とする請求項２記載の樹脂封止型半導体装置。   3. The resin-encapsulated semiconductor device according to claim 2, wherein the bonding portion prevents progress of resin peeling between a connection portion between the die pad and the bonding wire and the semiconductor chip. 前記接合部として、前記ダイパッドと前記ボンディングワイヤーとの接続部と、前記半導体チップとの間に溝を形成したことを特徴とする請求項３記載の樹脂封止型半導体装置。   4. The resin-encapsulated semiconductor device according to claim 3, wherein a groove is formed between the semiconductor chip and the connecting portion between the die pad and the bonding wire as the bonding portion. 前記ダイパッドの外周部に、前記ダイパッドと全て電気的に絶縁されている電極パッドを設け、前記ダイパッド上に前記半導体チップと前記ボンディングワイヤーとを配置しかつ接続し、前記半導体チップの配置部と前記ボンディングワイヤーとの接続部との間に樹脂剥離防止部を有することを特徴とする請求項３または４記載の樹脂封止型半導体装置。   An electrode pad that is electrically insulated from the die pad is provided on the outer periphery of the die pad, and the semiconductor chip and the bonding wire are arranged on and connected to the die pad, and the semiconductor chip arrangement part and the 5. The resin-encapsulated semiconductor device according to claim 3, further comprising a resin peeling prevention portion between the bonding wire and the connection portion. 前記ダイパッドと前記ボンディングワイヤーとの接続部の周辺部に溝を形成し、フレーム状態での前記樹脂封止型半導体装置の電極パッドと前記ダイパッド上に接続されるボンディングワイヤー周辺部とのばね定数を等しくしたことを特徴とする請求項３記載の樹脂封止型半導体装置。   A groove is formed in the peripheral portion of the connecting portion between the die pad and the bonding wire, and a spring constant between the electrode pad of the resin-encapsulated semiconductor device in the frame state and the peripheral portion of the bonding wire connected on the die pad is set. 4. The resin-encapsulated semiconductor device according to claim 3, wherein the resin-encapsulated semiconductor device is equal.
JP2005067086A 2005-03-10 2005-03-10 Resin sealed semiconductor device Pending JP2006253374A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015001676A1 (en) * 2013-07-05 2017-02-23 ルネサスエレクトロニクス株式会社 Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015001676A1 (en) * 2013-07-05 2017-02-23 ルネサスエレクトロニクス株式会社 Semiconductor device

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