JP2006253277A - Semiconductor device for module, module using the same, and module manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for module where a less amount of bubbles are generated in the gaps between an electronic component and a substrate. <P>SOLUTION: The semiconductor device for module comprises a first bump arrangement 52a where a plurality of connecting bumps 52 are arranged to have the first gap 53a between the adjacent connecting bumps, and a second bump arrangement 52d where a plurality of connecting bumps 52 are arranged to have the second gap 53b having an aperture area larger than that of the first gaps 53a. Consequently, a less amount of bubbles remains among the gaps. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a module semiconductor element used for portable electronic devices and the like that are required to be miniaturized, a module using the same, and a method of manufacturing the same.

  Hereinafter, a method of manufacturing a module using a conventional module semiconductor element will be described with reference to the drawings. FIG. 24 is a manufacturing flowchart of a conventional module, and FIGS. 25 to 27 are cross-sectional views of the module in the manufacturing process of the conventional module.

  24, the conventional module manufacturing method includes a cream solder printing process 3 for printing the cream solder 2 on the substrate 1, a mounting process 5 for mounting the electronic component 4 after the cream solder printing process 3, and this mounting. A reflow process 6 provided after the process 5, a semiconductor mounting process 8 for mounting the semiconductor element 7 after the reflow process 6, and an intermediate material injection process 10 for injecting the intermediate material 9 after the semiconductor mounting process 8. And a drying step 11 provided after the intermediate material injection step 10.

  Now, these steps will be described in detail in the order of the steps shown in FIG. FIG. 25 is a cross-sectional view of the module in the mounting process 5 of the conventional module manufacturing method. As shown in FIG. 25, the cream solder 2 was printed on the connection pattern 21a formed on the upper surface of the substrate 1 by screen printing. And the electronic component 4 was mounted | worn on this cream solder 2, and the electronic component 4 was connected to the board | substrate 1 by heating by the reflow process 6. FIG.

  FIG. 26 is a cross-sectional view of a module in a conventional semiconductor element mounting process. The semiconductor element 7 mounted on the substrate 1 in this semiconductor element mounting step 8 has gold bumps 22 arranged on the lower surface 7a side. In this semiconductor mounting step 8, the gold bumps 22 are It is mounted so as to be in a position corresponding to the land 21b.

  FIG. 27 is a cross-sectional view of the module in the intermediate material injection step of the conventional module manufacturing method. As shown in FIG. 27, in the intermediate material injection step 10, the intermediate material 32 is injected between the semiconductor element 7 and the substrate 1 by the dispenser 31 to fill the gap 33. Then, by drying these intermediate members 32 in the drying step 11, the gold bumps 22 and the semiconductor element connection patterns 21b are electrically and mechanically connected.

For example, Patent Document 1, Patent Document 2, or Patent Document 3 is known as prior art document information related to the invention of this application.
JP 2002-93957 A JP 2003-289128 A JP 2003-86949 A

  However, in such a conventional module manufacturing method, when the intermediate material 32 is injected into the gap 33 between the substrate 1 and the semiconductor element 7 by the dispenser 31, the viscous intermediate material 32 flows because the gap 33 is narrow. Becomes worse. Therefore, in the gap 33, the intermediate material 32 does not sufficiently flow, and there is a problem that a portion where bubbles remain is generated.

  Therefore, the present invention has been made to solve this problem, and an object of the present invention is to provide a module semiconductor element that can realize a module in which bubbles are not generated in a gap between an electronic component and a substrate. .

  In order to achieve this object, the module semiconductor element of the present invention is an array of connection bumps arranged so as to have two kinds of gaps in the semiconductor element.

  As described above, when the module semiconductor of the present invention is used for a module, the module semiconductor has a first bump arrangement portion in which the connection bumps are arranged with a first gap, and the first bump arrangement. Since the second bump arrangement portion in which the connection bumps are arranged is provided with a second gap larger than the portion, it is possible to provide a module semiconductor element in which bubbles do not remain in the gap. .

(Embodiment 1)
Embodiment 1 of the present invention will be described below with reference to the drawings. In FIG. 1 of the present embodiment, the same components as those in the prior art are designated by the same reference numerals, and the description thereof is simplified. Since the module manufacturing flowchart in the present embodiment is the same as the conventional module manufacturing flowchart shown in FIG. 24, each of these steps will be described in detail in the order of the steps shown in FIG. As shown in FIG. 24, the cream solder printing process 3, the mounting process 5 for mounting the component 4 after the cream solder printing process 3, the reflow process 6 for soldering after the mounting process 5, and the reflow A semiconductor mounting step 8 for mounting the semiconductor element 51 in the present embodiment after the step 6 and an intermediate material for pouring the resin 32 into the gap 53 between the semiconductor element 51 and the substrate 1 after the semiconductor element mounting step 8 The injection process 10 and the curing process 11 for curing the resin 32 after the intermediate material injection process 10 are configured.

  FIG. 2 is a cross-sectional view of a module mounting process using the module semiconductor element according to the first embodiment. As shown in FIG. 2, the cream solder 2 is printed on the connection pattern 21a formed on the upper surface of the substrate 1 by screen printing. Then, the electronic component 4 is mounted on the cream solder 2 and heated in the reflow process 6 to connect the electronic component 4 to the substrate 1.

  FIG. 3 is a cross-sectional view of the module in the semiconductor element mounting step of the first embodiment. In FIG. 3, 51 is a semiconductor element (used as an example of a module semiconductor element) mounted on the substrate 1 in the mounting step 8.

  First, the semiconductor element 51 (used as an example of a module semiconductor element) used in this embodiment will be described. On the lower surface 51 a side of the semiconductor element 51, 16 electrodes (not shown) connected to a semiconductor circuit (not shown) are provided (4 × 4 rows). Gold bumps (used as an example of connection bumps) 52a, 52b, 52c, and 52d are connected to all of these electrodes. These gold bumps 52a, 52b, 52c, and 52d are arranged in four rows as shown in FIG. In the semiconductor mounting step 8, these gold bumps 52 are mounted at positions corresponding to the lands 21b provided on the substrate 1.

  At this time, the semiconductor element 51 in the first embodiment is inclined with respect to the substrate 1. Therefore, the size of the gold bumps is increased from the gold bump 52a (used as an example of the first bump array portion) toward the gold bump 52d (used as an example of the second bump array portion). Yes. As a result, the semiconductor element 51 is mounted to be inclined with respect to the substrate 1.

  Here, it is important to provide the largest gold bump 52d in the vicinity of the outer periphery of the semiconductor element 51. That is, by making the gold bump 52 in the outer peripheral portion the largest, the semiconductor element 51 can be stably in an inclined state. Mounted on the substrate 1.

  In the first embodiment, the inclination angle of the semiconductor element 51 with respect to the substrate 1 is set to about 6 degrees. Therefore, since the size of the semiconductor element 51 in the first embodiment is 15 mm square, the height of the gold bump 52d is about 100 μm larger than that of the gold bump 52a. .

  FIG. 4 is an enlarged view of a main part of the module in the intermediate material injecting step of Embodiment 1, and FIG. 1 is a cross-sectional view of the module in the injecting step. 1 and 5, first, in the intermediate material injection step 10, an intermediate material 32 is injected between the semiconductor element 7 and the substrate 1 by a dispenser 31 or the like, and a gap 53 between the semiconductor element 7 and the substrate 1 (FIG. 3). )

  Here, it is important to inject the intermediate material 32 from the gold bump 52d side. As a result, the gap 103 gradually decreases from the gold bump 52d side toward the gold bump 52a, so that the gap 53 can be considered as a gradually reduced tube. Accordingly, the resin 32 may be considered as a viscous fluid that gradually flows through the reduction tube, and the pressure loss of the intermediate member 32 injected into the gap 53 is reduced. Accordingly, the intermediate material 32 is firmly injected into the gap 53.

  Then, as shown in FIG. 1, by curing these intermediate materials 32 in the drying step 11, an intermediate material layer 54 (used as an example of a resin flow buried portion) is formed, and gold bumps 52a, 52b, 52c are formed. , 52d and the connection pattern 21b are electrically and mechanically connected.

  In the first embodiment, the intermediate material is injected only between the semiconductor element 51 and the substrate 1. However, the intermediate material may also be injected between the electronic component 4 and the substrate 1.

  As described above, the semiconductor element 51 according to the first embodiment is mounted with the semiconductor element 51 inclined with respect to the substrate 1 by increasing the size of the gold bump 52d as compared with the gold bump 52a. As a result, the gap 53b (used as an example of the second gap) on the gold bump 52d side becomes larger than the gap 53a (used as an example of the first gap) on the gold bump row 52a side. On the bump 102d side, the intermediate material easily flows into the gaps 53a, 53b, and 53c. Thereby, bubbles can be reduced from remaining in the intermediate material layer 54 in the gaps 53a, 53b, and 53c.

  Further, since the semiconductor element 51 is mounted to be inclined with respect to the substrate 1, the bubbles in the gaps 53a, 53b, 53c generated during the injection of the intermediate material move along the inclination of the lower surface 51a, and the bubbles are easily removed. There is also an effect of becoming.

(Embodiment 2)
Hereinafter, Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 5 is a flowchart of the module manufacturing method according to the embodiment of the present invention, FIG. 6 is a cross-sectional view of the module, and FIGS. 7 to 18 are diagrams illustrating the module manufacturing method according to the present embodiment. It is detail drawing of a process. 7 to 18, the same reference numerals are used for the same components as those in the prior art and the first embodiment, and the description thereof is simplified.

  First, the configuration of the module in the present embodiment will be described with reference to FIG. In FIG. 6, reference numeral 101 denotes a thermosetting resin multilayer substrate. The layers are connected to each other by inner vias (not shown). Also, a copper foil pattern (not shown) is laid on the upper surface of each layer to form each electronic circuit.

  Land patterns 104a, 104b, 104c, and 104d are formed on the upper surface of the substrate 101. The electrodes (not shown) of the semiconductor element 105 placed on the upper surface of the substrate 101 are land patterns via bump rows 102a, 102b, and 102c (used as an example of the first bump array portion), respectively. 104a, 104b, 104c are connected. A bump row 102d (used as an example of a second bump array portion) is provided near the outer peripheral edge of the semiconductor element 105. The semiconductor element 105 is mounted on the substrate 101 in an inclined state so that the distance between the substrate 101 and the semiconductor element 105 gradually increases from the bump row 102a, 102b, 102c toward the bump row 102d. The resistor 106 and the land pattern 104d are also connected by solder 107.

  Here, in the second embodiment, the land patterns 104a and 104c are electrically independent terminals. The land pattern 104b (used as an example of a short-circuit prevention means) is a land provided between the land patterns 104a and 104c, and is connected to the ground together with the ground pattern 104a.

  The solder 107 and the bumps 102a, 102b, 102c, and 102d are all made of lead-free solder using tin / silver / copper. This is because it does not contain harmful substances and does not adversely affect the environment. The melting point of the bump 102d is higher than that of the bumps 102a, 102b, and 102c.

  Reference numeral 108 denotes a thermosetting resin sandwiched between the substrate 101 and the copper foil pattern 109. The semiconductor element 105 and the resistor 106 are embedded in the resin 108.

  Next, each step in the method for manufacturing a module according to the second embodiment will be described with reference to FIGS. 7 to 18 in the order of steps shown in FIG. FIG. 5 is a manufacturing flowchart of the module according to the second embodiment, and FIG. 7 is a cross-sectional view of the module in the flux application process. 5 and 7, reference numeral 111 denotes a flux application process. In the flux application step 111, the flux 112 is printed by a metal screen (not shown) on the land patterns 104a, 104b, 104c for mounting the semiconductor element 105 (shown in FIG. 9).

  FIG. 8 is a cross-sectional view of the module in the cream solder printing process according to the first embodiment. 5 and 8, 113 is a cream solder printing process provided after the flux application process 111. In this cream solder printing step 113, the cream solder 2 (used as an example of a connection fixing material) is printed on the land pattern 104d for mounting the resistor 106 (shown in FIG. 9) using the screen 131. The screen uses a stainless steel metal screen, and the screen 131 is formed with a recess 122 at a position where the flux 112 is applied. And this recessed part 122 prevents that the flux 112 adheres to the screen 131 at the time of cream solder 2 printing.

  FIG. 9 is a cross-sectional view of the module in the mounting process of the second embodiment. In FIGS. 5 and 9, reference numeral 114 denotes an electronic component mounting process provided after the cream solder printing process. In this electronic component mounting process 114, the semiconductor element 105, the resistor 106, etc. Mounted in position. The semiconductor element 105 is provided with bumps having substantially the same size so that the total of 16 solder bumps 102a, 102b, 102c, and 102d in 4 × 4 rows are substantially the same height. ing.

  FIG. 10 is a cross-sectional view of the module in the reflow process of the first embodiment. 5 and 10, reference numeral 115 denotes a reflow process provided after the electronic component mounting process. The temperature in the reflow process 115 is set so that the cream solder 2 and the bumps 102a, 102b, and 102c are higher than the melting point temperature. As a result, the cream solder 2 and the bumps 102a, 102b, and 102c are melted, and the resistor 106 and the land pattern 104d, and the bumps 102a, 102b, and 102c of the semiconductor element 105 and the land patterns 104a, 104b, and 104c are fixed by soldering. ing.

  Here, it is important that the temperature of the reflow process 115 is equal to or higher than the melting point of the bumps 102a, 102b, and 102c and lower than the melting point of the bump 102d. In other words, by increasing the melting point of the bump 102b with respect to the temperature of the reflow process 115, the bump 102b is not melted in the reflow process 115. As a result, the bumps 102a, 102b, and 102c are melted, and only the bump 102d is not melted. Therefore, the semiconductor element 105 is mounted with an inclination to the substrate 101.

  In the first embodiment, the reflow process 115 is performed in a nitrogen atmosphere. Thereby, the oxidation of the surface of the substrate 101 can be suppressed, and the adhesion between the substrate 101 and the prepreg 141 (shown in FIG. 11) is improved.

Further, after the reflow process 115, cleaning is performed in a cleaning process (not shown) to clean the residue of the flux 112, solder balls, and the like. Further, it is better to perform O ₂ asher treatment, silane coupling treatment, or the like. This is because the adhesion between the substrate 101 and the prepreg can be improved by these surface modification treatments.

  FIG. 11 is a cross-sectional view of the module in the prepreg lamination step of the first embodiment. 5 and 11, reference numeral 116 denotes a prepreg lamination step provided after the reflow step. This prepreg laminating step 116 is a step of laminating a prepreg 141 with a hole (used as an example of a sheet) on the substrate 101, and the prepreg 141 with a hole is preliminarily formed on the prepreg 141 in the semiconductor element 105 in the hole processing step 117. The hole 146 into which the resistor 106 is inserted and the hole 142 into which the resistor 106 is inserted are processed. In addition, the prepreg 141 in the second embodiment is obtained by impregnating a glass nonwoven fabric with a thermosetting resin and drying it. In the second embodiment, an epoxy resin is used as the thermosetting resin, but other thermosetting resins such as phenol may be used. In the present embodiment, a glass nonwoven fabric is used. However, this may be a glass woven fabric, or a fabric made of other resin fibers such as an aramid resin.

  Here, a gap 143 is provided between the hole 146 and the outer periphery of the semiconductor element 105. Therefore, the prepreg 141 with a hole can be easily laminated on the substrate 101 on which the semiconductor element 105 is mounted. Similarly, since the gap 144 is also provided between the hole 142 and the outer periphery of the resistor 106, the prepreg 141 with a hole can be easily laminated on the substrate 101 on which the resistor 106 is mounted.

  Further, since the semiconductor element 105 and the resistor 106 are mounted by reflow soldering, they are mounted at predetermined positions with high positional accuracy by the self-alignment effect due to the melting of the cream solder 2 and the bumps 102a, 102b, and 102c. That is, since the positional accuracy of the semiconductor element 105 and the resistor 106 is good, the gaps 143 and 144 can be reduced. Accordingly, the epoxy resin can easily flow into the gaps 156 and 157. In the first embodiment, the gap 143a in the side surface direction of the semiconductor element 105 in the gap 143 is about 0.4 mm. The gap 144a in the lateral direction of the resistor 106 in the gap 144 is about 0.2 mm. Thus, since the gaps 143a and 144a are provided, the prepreg can be easily stacked even if the mounting positions of the semiconductor element 105 and the resistor 106 are shifted from the predetermined positions.

  In the first embodiment, six prepregs 141 a to 141 f having a thickness of 0.2 mm are stacked in this order on the upper surface of the substrate 101. In the four sheets from the prepregs 141a to 141d, a hole 146 into which the semiconductor element 105 is inserted and a hole 142 into which the resistor 106 is inserted are formed. The prepreg 141e is provided with only the hole 142 into which the resistor 106 is inserted, and is not provided with the hole 146 into which the semiconductor element 105 is inserted. That is, a hole corresponding to the height of the electronic component is provided. In this case, it is preferable to provide gaps 143b and 144b above the semiconductor element 105 and the resistor 106. This is to prevent the semiconductor element 105 and the resistor 106 from being destroyed by the compression pressure applied in the integration step 118 described later. That is, this prevents the compression pressure from being applied to the semiconductor element 105 and the resistor 106 before the epoxy resin 108 is softened.

  A prepreg 141f in which neither of the holes 146 and 142 is formed is placed on the upper surface of the prepreg 141e, and a copper foil 145 is provided on the entire upper surface of the prepreg 141f.

  Reference numeral 118 (shown in FIG. 5) denotes an integration process in which the substrate 101, the prepreg 141, and the copper foil 145 laminated in the prepreg lamination process are heat-pressed and integrated at a temperature at which the solder 107 does not melt. Hereinafter, the integration step 118 will be described in the order shown in FIG.

  FIG. 12 is a cross-sectional view of the integration means in the integration process of the second embodiment. The integration means will be described in detail with reference to FIG. Reference numerals 151 and 152 denote platens (used as an example of compression means), and the substrate 101 is mounted on the platen 152 side. The platens 151 and 152 and the stretchable wall 153 constitute a sealed container 154 (used as an example of a sealing means). A suction machine (not shown) is connected to the sealed container 154. In the first embodiment, the air in the sealed container 154 is sucked from the hole 155 provided in the vicinity of the outer peripheral portion of the platen 152. Reference numeral 160 denotes a heater embedded in the platens 151 and 152, and the prepreg 141 is heated by the heater.

  Reference numeral 162 denotes a servo motor which is used to drive the platen 152 with high responsiveness. Further, a speed reduction mechanism 163 is inserted between the servo motor 162 and the platen 152 to convert the rotary motion into a reciprocating motion and to reduce the rotation of the servo motor 162. Since the speed reduction mechanism 163 in the first embodiment uses a ball nut bearing, the position of the platen 152 can be precisely controlled.

  The platens 151 and 152 are provided with a temperature sensor, a pressure sensor, and a position sensor (not shown), and outputs from these sensors and a memory (not shown) are input to a control circuit (not shown). It is connected. The output of this control circuit is connected to the input of the servo motor 162, the input of the heater 160, and the suction machine, and controls their operations. The control circuit is connected to the output of the clock timer, and also manages the time in the integration step 118. In the first embodiment, since the viscosity of the epoxy resin 108 changes depending on the temperature, the viscosity of the epoxy resin 108 is managed by replacing it with the temperature. Further, the memory stores determination conditions for the sensor output in the integration process as data, and the control circuit compares and determines these data and the output from each sensor, and the heater 160, servo motor 162, suction machine, etc. Is controlling.

  Next, an integration process using the integration means configured as described above will be described in detail. FIG. 13 is a cross-sectional view of the integration means in the vacuuming process of the first embodiment. 5, 12, and 13, reference numeral 119 denotes a vacuuming process provided after the prepreg lamination process. In this evacuation step 119, the module in which the prepreg 141 is laminated on the substrate 101 in the prepreg lamination step 116 is accommodated in a sealed container 154 constituted by the platens 151 and 152 and the stretchable wall 153. In the first embodiment, the platen 151 side is fixed and the platen 152 side is movable.

  Then, the air in the sealed container 154 is extracted from the hole 155 by a suction device, and the inside of the sealed container 154 is brought into a substantially vacuum state. At this time, it is important to make the inside of the holes 146 and 142 substantially vacuum. This is because the holes 146 and 142 are evacuated, and the epoxy resin 108 in the prepreg 141 is removed from the gaps 143 and 144 and the narrow gap between the substrate 101 and the semiconductor element 105 in the forced inflow step 122 described later. This is because it is surely filled into the narrow gap 157 between the substrate 101 and the resistor 106. The gap 156 in this embodiment has a size of about 40 μm to about 350 μm, and the gap 157 is about 10 μm to about 40 μm, which is very small compared to the gap 143 and the gap 144.

  In the present embodiment, for convenience of explanation, the description is made using one semiconductor element 105 and only two resistors 106 mounted. However, more electronic components are actually mounted on the substrate 101. In consideration of module productivity, it is desirable that the size of the substrate 101 be large. Therefore, in reality, the gaps 143 and 144 and the gaps 156 and 157 are provided in more places. Therefore, in the evacuation step 119, it is important to suck in the air existing in the numerous gaps 143 and 144 and the gaps 156 and 157.

  Accordingly, a plurality of prepregs 141 that are not viscous at room temperature are used in the first embodiment. Further, by providing the evacuation step 119 before the softening step 120, viscosity is generated in the prepreg 141 so that the prepregs 141 or between the prepreg 141 and the substrate 101 does not stick. That is, the vacuuming step 119 is completed before the prepreg 141 becomes viscous. Thereby, air can be extracted from between the prepregs 141 or between the prepreg 141 and the substrate 101, and the gaps 143, 144 and the gaps 156, 157 can be substantially vacuumed.

  In the present embodiment, as the pressure in the sealed container 154 decreases, the telescopic wall 153 contracts, and the platen 152 is lifted in the direction of arrow A as shown in FIG. As shown in FIG. 13, the prepreg 141 and the copper foil 145 laminated with the substrate 101 are completely sandwiched and held between the platen 151 and the platen 152. At this time, the inside of the sealed container 154 is substantially vacuum, and a negative pressure of about 0.2 MPa is applied to the prepreg 141.

  FIG. 14 is a cross-sectional view of the integration means in the softening process of the second embodiment. 5 and 14, reference numeral 120 denotes a softening process provided after the vacuuming process. In the softening step 120, the epoxy resin 108 impregnated in the prepreg 141 is softened by heating the heater 160. In the first embodiment, the temperature of the epoxy resin 108 is increased to about 110, and the viscosity is decreased to about 2100 ps. This viscosity is a viscosity at which the epoxy resin 108 starts to flow at the pressure (0.2 MPa) generated by the evacuation by the evacuation means in the first embodiment.

  In FIG. 5, 121 (shown in FIG. 1) is a resin flow suppression step provided after the softening step. Here, the heater 160 heats the epoxy resin 108 to a viscosity that can flow. This is because, in the forced inflow process 122 described later, the viscosity of the resin 108 is likely to flow into the gaps 156 and 157 as much as possible.

  For this reason, the epoxy resin 108 flows out to the outside of the substrate 101, the gaps 143 and 144, and the gaps 156 and 157 even if the pressure is as low as 0.2 MPa. . For example, when the epoxy resin 108 flows out of the substrate 101, the amount of the epoxy resin 108 that flows in the forced inflow process 122, which will be described later, is reduced, so that it is difficult for the resin to flow into the gaps 156, 157 and the like. .

  Further, in the softening process 120, the platens 151 and 152 heat the substrate 101 and the prepreg 141 from above and below, so that a temperature difference between a place close to the heater 160 provided on the platens 151 and 152 and a place far from them. Is likely to occur. In general, the gaps 156 and 157 are formed at positions away from the platens 151 and 152. That is, the temperature of the gaps 156 and 157 is lower than the temperature of the epoxy resin 108. Therefore, if the epoxy resin 108 flows into the gaps 156 and 157 before the forced inflow step 122, the temperature of the epoxy resin 108 decreases. As a result, the viscosity of the epoxy resin 108 that has flowed into the gaps 156 and 157 increases, and the epoxy resin 108 does not flow into the gap any more during the forced inflow process 122, which causes generation of voids and the like.

  Therefore, in the present embodiment, a resin flow suppression process 121 is provided between the softening process 120 and the forced inflow process 122. In this resin flow suppression process, the compression pressure applied to the prepreg 141 by the platens 151 and 152 is relaxed so that the epoxy resin does not flow from the start of the flow of the epoxy resin 108 until the epoxy resin 108 is forced to flow. It is to make. As a result, the epoxy resin 108 is less likely to flow out. In addition, since the epoxy resin 108 can hardly enter the gap during this step, the epoxy resin can be surely filled into the gap in the forced inflow step 122.

  In the present embodiment, based on the signal from the temperature sensor, the servo motor relaxes the compression pressure applied to the epoxy resin 108 by expanding the platen 152 in the B direction (shown in FIG. 14). Since the viscosity of the epoxy resin 108 changes depending on the temperature, the viscosity of the epoxy resin 108 is managed by replacing it with the temperature. That is, the memory stores flow start temperature data at which the epoxy resin 108 starts to flow. The control circuit compares the signal detected by the temperature sensor with the flow start temperature data, and drives the servo motor when it is determined that the epoxy resin 108 has reached the flow start temperature. The control circuit inputs the pressure signal from the pressure sensor and controls the servo motor 162 so that the pressure of the platen 152 becomes a predetermined pressure.

  In order to suppress the flow of the epoxy resin 108, it is desirable to hold the platens 151 and 152, the substrate 101, and the prepreg 141 at a pressure as low as possible within a range where they can be contacted. Therefore, the pressure in the resin flow suppression step 121 of the first embodiment is about 0.1 MPa. As a result, it is possible to reduce the flow of the epoxy resin 108, and it is possible to reliably fill the gaps 156 and 157 with the epoxy resin 108 in the forced inflow process 122 described later.

  Next, FIG. 15 is a cross-sectional view of the integration means in the forced inflow process of the second embodiment, and FIG. 16 is an enlarged cross-sectional view of the main part in the forced inflow process. 5, 15, and 16, reference numeral 122 denotes a forced inflow process provided after the resin flow suppressing process. In this forced inflow process 122, the prepreg 141 is compressed to a thickness of approximately two thirds, and the epoxy resin 108 contained in the glass nonwoven fabric of the prepreg 141 flows out, filling the gaps 143 and 144 and the gaps 156 and 157 as a whole. Is done. That is, the platen 152 is moved at high speed in the direction of arrow C in FIG. 15, and the prepreg 141 is compressed toward the substrate side. As a result, the softened epoxy resin 108 is caused to flow into the gaps 143 and 144 and the gaps 156 and 157. At this time, by increasing the compression speed of the platen 152, the speed of the fluid resin is stalled in a short time. The resin is injected into the gaps 156 and 157 without doing so.

  Here, since the gaps 156 and 157 are very small compared to the gaps 143 and 144, a large pressure loss occurs when the epoxy resin 108 flows into the gaps 156 and 157. Further, since the epoxy resin 108 is a viscous fluid, friction is generated on the contact surface with the substrate 101, the semiconductor element 105, and the resistor 106. In particular, since the semiconductor element 105 has a large number of bumps 102, the width of the passage through which the epoxy resin 108 flows is repeatedly reduced and enlarged by the bumps 102. Therefore, in particular, the pressure loss of the epoxy resin 108 in the gap 156 increases.

  Therefore, in this embodiment mode, the semiconductor element 105 is mounted with an inclination with respect to the substrate 101. This facilitates the inflow of the epoxy resin 108 from the bump 102d (gap 156c) side having a large opening area, and the pressure loss can be reduced. Therefore, by the time the filling of the epoxy resin 108 into the gaps 156 and 157 is completed, the flow does not stop due to pressure loss or frictional force, and the epoxy resin 108 can be filled into the gap 156.

  Further, in the forced inflow process 122, bubbles remaining in the epoxy resin 108 may flow into the gap 156. In such a case, generally, voids are likely to occur at the collision portion 108c where the epoxy resin 108a flowing in from the bump 102d side and the epoxy resin 108b flowing in from the bump 102a side collide.

  In the present embodiment, since the semiconductor element 105 is mounted at an inclination, the epoxy resin 108 is more likely to flow from the bump 102d side, and the collision portion 108c is between the bump 102a and the bump 102b. . Therefore, the bump 102b (used as an example of a short-circuit prevention means) is used as a ground terminal like the bump 102a, and the land pattern 104b and the land pattern 104a are connected to each other and are grounded. Accordingly, the bumps 102a and 102b and the land patterns 104a and 104b are all grounded, and the position of the collision part 108c is provided at a position surrounded by the bumps 102a and 102b and the land patterns 104a and 104b. Even if a void or the like occurs in the portion 108c, a short circuit between the circuits does not occur. Therefore, when reflow soldering such a module, the bumps 102a and 102c are short-circuited due to voids, and it is difficult to cause a short circuit between circuits.

  In addition, since the semiconductor element 105 is mounted with an inclination with respect to the substrate 101, the bubbles in the epoxy resin 108 can easily come out of the gap 156 along the inclination. As a result, voids and the like are less likely to remain in the gap 156.

  Further, in the first embodiment, the heating is continuously performed by the heater 160 even during the forced inflow step 122. Accordingly, it is necessary to fill the gaps 143, 143a, 144, 144a and 156, 157 in a short time. This is because the temperature of the epoxy resin 108 rises due to the heating from the heater 160 and the prepreg 141 is a thermosetting resin, thereby preventing the prepreg 141 from being cured. Therefore, the platen 152 is moved at a high speed of about 300 mm / second or more, and the resin is rapidly compressed. As a result, a flow is suddenly generated in the epoxy resin 108, and the epoxy resin 108 is injected into the gaps 143, 143a, 144, 144a, 156, and 157 before the temperature of the epoxy resin 108 increases. In the first embodiment, since the servo motor 162 with good response is used for driving the platen 152, a rapid acceleration can be given to the platen 152. Then, the movement of the platen 152 is stopped by contacting the stopper 161.

  Here, the vacuum state is released substantially simultaneously with the forced inflow step 122, and the pressure is returned to the substantially atmospheric pressure. Accordingly, in the forced inflow step 122, the epoxy resin 108 is compressed from the vertical direction by the platens 151 and 152, and at the same time, pressure is applied from the side surface direction, so that the epoxy resin 108 easily flows into the gaps 156 and 157. .

  Then, after filling the epoxy resin 108 into the gaps 156 and 157 in this way, the epoxy resin 108 is cured by a curing step 123 (shown in FIG. 1). Here, it is important that the epoxy resin 108 loses its fluidity at a temperature lower than the liquidus temperature of the solder bumps 102a, 102b, 102c, 102d and the solder 107. As a result, the epoxy resin 108 loses fluidity and covers the bumps 102. Even if the bumps 102 are melted in the curing step 123, the solder of the bumps does not flow out. Short circuits are less likely to occur.

  The melting point of the bump 102 is higher than the resin temperature in the forced inflow process. Thereby, the bump 102 does not melt when the epoxy resin 108 flows into the gap 156. Therefore, since the inclination of the semiconductor element 105 can be firmly maintained in the forced inflow step 122, the epoxy resin 108 can surely flow into the gap 156.

  Since the solder bump 102 and the solder 107 use lead-free solder having a melting point of about 200 ° C., and the bump 102b uses lead-free solder having a melting point of about 210 ° C., the epoxy resin 108 loses fluidity. Desirably, the temperature is at least about 180 ° C. or less. Therefore, in the first embodiment, the fluidity of the epoxy resin 108 is lost at about 150 ° C. Here, since the viscosity of the epoxy resin 108 at 150 ° C. is about 24000 ps, the pressure in the curing process is set to about 4 MPa in order to prevent fluidity from being generated above this viscosity.

  When the curing of the prepreg 141 is completed in this way, the process proceeds to the cooling step 124 (shown in FIG. 1). In this cooling step 124, cooling is performed with a slow gradient.

  FIG. 17 is a cross-sectional view of the cutting means in the cutting step of the second embodiment. 5 and 17, reference numeral 125 denotes a cutting process in which the resin 172 that has flowed out of the substrate 101 by the forced inflow process 122 is excised. In this cutting step 125, reference numeral 171 denotes a dicing tooth for cutting the module. In this cutting step 125, the dicing tooth 171 is rotated to cut off unnecessary resin 172. In the first embodiment, not only the unnecessary resin 172 part is cut off, but both the substrate 101 and the resin 172 are cut. This is because the inside of the end portion of the substrate 101 is cut so that the module has a substantially constant size regardless of the expansion and contraction of the substrate 101.

  Next, an operation in which the epoxy resin 108 is injected into the gaps 156 and 157 in the integration step 118 will be described. First, the relationship between the temperature of the epoxy resin 108, the pressure and the viscosity characteristics will be described with reference to the drawings. FIG. 18 is a characteristic diagram of the epoxy resin 108, where the horizontal axis 201 is temperature, the first vertical axis 202 is viscosity, and the second vertical axis indicates the compression pressure 203. In FIG. 18, 204 indicates the viscosity characteristic of the epoxy resin 108 contained in the prepreg, and 205 indicates the pressure of the platens 151 and 152 that the prepreg receives.

  First, the epoxy resin 108 is non-flowable at room temperature and has no viscosity. The epoxy resin 108 softens and decreases in viscosity as the temperature rises, and reaches a minimum viscosity 207 at the temperature 206. The viscosity increases at the temperature 206 or higher, and curing is promoted. In addition, the temperature 206 in the epoxy resin 108 in this Embodiment 2 is about 133 degreeC, and the minimum viscosity 207 at that time is about 1150 ps.

  It should be noted that pressure is always applied to the epoxy resin 108 during the integration step 118 described above. That is, the flow of the epoxy resin 108 is determined by the pressure applied to the epoxy resin 108 and the viscosity (temperature) of the epoxy resin 108.

  Accordingly, when the pressure characteristics of the platens 151 and 152 are examined next, the pressure 208 is applied in the flow suppressing process 121 and the pressure 209 is applied in the curing process 123. Then, the pressure is instantaneously increased in the forced inflow process 122 between the softening process 120 and the curing process 123.

  The epoxy resin 108 has a viscosity 212 (hereinafter referred to as a flow start viscosity) that starts flowing when the temperature reaches a temperature 211 at the pressure 208. That is, the epoxy resin 108 is plate-shaped in the temperature region 213 from normal temperature to the temperature 211, and does not flow. Since the pressure 208 is 0.2 MPa in the first embodiment, the flow starting viscosity is 2100 ps, and the temperature 211 at that time is about 110 ° C.

  Next, when the temperature 211 is exceeded, the viscosity of the epoxy resin 108 decreases to the minimum viscosity 207 at the temperature 206. The forced inflow step 122 is performed in a temperature region 214 (used as an example of the first temperature range) between the temperature 211 and the temperature 206.

  When the forced inflow step 122 is completed, the epoxy resin 108 is cured in the curing step 123, and the pressure 209 is applied in the curing step 123. The epoxy resin 108 gradually cures when it reaches a temperature region 215 (used as an example of the second temperature range) of a temperature 206 or higher, and becomes a viscosity 217 that loses fluidity at a temperature 216 at a pressure 209. When the pressure 209 is 4 MPa, the temperature 216 is 150 ° C., and the viscosity 217 is 24000 ps.

  In the curing step 123 in the first embodiment, the epoxy resin 108 is raised to a temperature of about 180 ° C. and held at that temperature for 60 minutes. Then, it has a slow cooling process of gradually cooling at a rate of about 1 ° C./min while adjusting the temperature of the heater 160 while being sandwiched between the platens 151 and 152.

  By the above method, pressure is applied by the platen 152 to force the epoxy resin 108 to flow. It should be noted that the time from the start to the end of the movement of the platen is completed in a short time of about 1 second or less. When the temperature exceeds the temperature 206 at which the minimum viscosity 207 is reached, the addition polymerization reaction proceeds by further heating, and curing begins. And it heats to the temperature of 216 or more, the flow of the epoxy resin 108 is lost, and it hardens | cures.

  With the above configuration, the semiconductor element 105 is mounted in an inclined state with respect to the substrate 101, so that the epoxy resin 108 can easily flow into the gap. Further, the bubbles easily move out of the semiconductor element 105 due to the inclination, and the bubbles are less likely to remain in the gap 156. Accordingly, a module in which the semiconductor element is embedded in the epoxy resin 108 without previously filling the gaps 156 and 157 between the semiconductor element 105 and the resistor 106 and the substrate 101 with an intermediate material or the like can be realized. The manufacturing method of can be provided.

  In addition, a step of separately injecting the intermediate material is not required, and the intermediate material is unnecessary, so that a low-cost module can be realized.

  Furthermore, the epoxy resin 108 can be reliably filled into the narrow gaps 156 and 157 in the forced inflow step 122. Therefore, voids are less likely to occur, and a highly reliable module can be realized.

  Furthermore, in the first embodiment, the vacuum state is released substantially simultaneously with the forced inflow step 122. As a result, the epoxy resin 108 is compressed in the vertical direction by the platen 152 and at the same time the pressure in the side surface direction is increased by the pressure increase due to the release of the vacuum, and the epoxy resin 108 easily flows into the gaps 156, 157, etc. Become.

  In the evacuation step 119, when the air in the prepreg 141 is not completely removed and air bubbles remain in some places, the air bubbles expand due to the softening in the softening step 120, and the bubbles remain in a low pressure state. (Hereinafter referred to as a vacuum void) occurs. If this vacuum void occurs in the bump portion of the semiconductor element 105, when the bump is melted by heating such as reflow soldering, the melted bump is sucked by the vacuum void, and the semiconductor element 105 and the land pattern 104a The connection between the two is disconnected or the adjacent bumps are short-circuited. Further, when water droplets enter the vacuum void due to moisture absorption of the epoxy resin 108 or the like, the water droplets may cause a water vapor explosion due to reflow soldering and disconnection.

  Therefore, in this embodiment, the bumps 102a and 102b surrounding the collision portion 108c between the epoxy resin 108a and the epoxy resin 108b are used as terminals of the same signal. Thereby, even if a vacuum void is generated between the bumps 102a and 102b, a short circuit of the circuit in the semiconductor element 105 can be prevented.

  Moreover, generally this vacuum void is easy to generate | occur | produce in the collision part 108c. Therefore, by providing the semiconductor element 105 with an inclination, the epoxy resin 108 can easily flow from the bump 102a side. Thereby, the position of the collision part 108c can be moved. That is, if the inclination angle of the semiconductor element 105 is changed, the cross-sectional area of the conduit through which the epoxy resin 108 flows can be changed, so that the position of the collision portion 108c can be adjusted. Therefore, the position of the collision part 108c can be adjusted to a position between 102a and 102b by changing the size of the bump 102d or the like and appropriately changing the inclination angle.

  Further, since the semiconductor element 105 is inclined, voids are easily removed.

  In the second embodiment, the bump 102b is the same signal terminal as the bump 102a, but the bump 102b may be an independent terminal to which no signal is supplied.

  Further, the vacuum release is performed substantially simultaneously with the forced inflow step 122 to reduce the vacuum void, thereby further preventing the generation of the vacuum void. It is desirable to release the vacuum at a temperature 206 or lower at which the epoxy resin 108 is cured. This is because even if atmospheric pressure is applied to the epoxy resin 108 by releasing the vacuum, the shrinkage of the vacuum void does not occur after the epoxy resin 108 is cured.

  With the above configuration, generation of vacuum voids is prevented, so that it is difficult for vacuum voids to be generated in the gaps 143, 143a, 144, 144a and the gaps 156, 157, and the bump connection is lost during the reflow process. In addition, it is possible to realize a highly reliable module with less occurrence of short circuits.

  Since the prepreg 141 is a thermosetting resin, it does not return to a plastic state even if it is heated again after being once thermoset. Therefore, fixing of the semiconductor element 105 once sealed with the epoxy resin 108 is maintained. Further, the viscosity of the epoxy resin 108 gradually decreases to a temperature of about 150 ° C. Accordingly, the epoxy resin 108 thus has a reduced viscosity, increases fluidity, and can be sufficiently filled in a narrow gap. In addition, since the glass nonwoven fabric is impregnated with an epoxy resin, the appearance as a substrate can be maintained even if the epoxy resin 108 is flowed in the softening step 120 or the forced inflow step 122, so that the dimensional accuracy is good. Module can be realized.

  Further, the temperature in this forced inflow process is integrated at a low temperature (150 ° C.) so that the solder for connecting and fixing the semiconductor element 105 and the resistor 106 does not melt, so that the connection fixing is not broken by this integration. The semiconductor element 105 and the resistor 106 can be kept firmly connected and fixed.

  Furthermore, since the thermosetting prepreg 141 is used, even if heated after being thermoset, it does not return to the plastic state again, and a stable fixed state of the sealed semiconductor element 105 and the resistor 106 is maintained. .

  Furthermore, since the semiconductor element 105 and the resistor 106 are mounted on the substrate 101, the inspection can be performed in the state of the substrate 101, and the yield rate after completion of the module is improved.

  In the second embodiment, six prepregs 141 are used, but this may be one thick prepreg. In that case, since the stacking step 116 can be performed in a short time, a low-cost module can be obtained.

  Furthermore, in the second embodiment, the epoxy resin 108 is filled into the gap 156 in the forced inflow step 122 to form the fluid buried portion. An intermediate material may be injected. Even in such a case, since the semiconductor element 105 is attached to the substrate 101 at an inclination, bubbles are hardly left.

  In this embodiment, the pressure and the degree of vacuum are changed, but this may be constant. In this case, it is not necessary to control the pressure and the degree of vacuum as an integration means, so that the facility becomes easy. Therefore, the equipment cost is low. In that case, the epoxy resin 108 is at least a gap lower than the curing temperature so that the epoxy resin 108 does not harden due to a temperature rise due to the epoxy resin 108 flowing into the gap 156. It is important that 156 is filled.

(Embodiment 3)
This embodiment is another example of the semiconductor element, and the semiconductor element of this embodiment can be used for the first and second embodiments. The module semiconductor element according to the third embodiment will be described below with reference to the drawings. FIG. 19 is a bottom view of the module semiconductor element according to the third embodiment.

  In FIG. 19, reference numeral 251 denotes a semiconductor element in which a semiconductor circuit is configured, and an electrode (not shown) connected to the semiconductor circuit is provided on the lower surface side of the semiconductor element 251. Solder bumps 252 are soldered to each of these electrodes. Note that the semiconductor element 251 in this embodiment is provided with 69 solder bumps 252. In the semiconductor element 251, seven rows of solder bump rows 254 (used as an example of the first bump arrangement portion) in which nine solder bumps 252 are arranged at intervals 253 are arranged. Next to the solder bump row 254, one row of solder bump rows 256 in which five solder bumps 252 are arranged side by side with an interval 255 is arranged. Further, adjacent to the solder bumps 256, two solder bump rows 258 (used as an example of the second bump arrangement portion) in which five solder bumps 252 are arranged side by side at an interval 257 are arranged. The bump rows 254, 256, and 258 are arranged at intervals 259.

  The semiconductor element 251 is provided with an electrode non-formation portion 260 in which no electrode is formed and the solder bump 252 is not mounted in the center of the fifth and sixth rows of the solder bump row 254.

  With the above configuration, the interval 257 on the solder bump row 258 side is made larger than the interval 253 on the solder bump row 254 side. Accordingly, in the solder bump rows 256 and 258, the gaps 265 and 266 formed between the solder bumps 252 are larger than the gap 267 formed in the solder bump row 254. Therefore, if the semiconductor element 251 of this embodiment is used in the module shown in this embodiment 1 or 2, the intermediate material and the epoxy resin can be easily flowed from the solder bump row 258 side. . Therefore, even in the semiconductor element 251 in which many solder bumps 252 are formed, the gap formed between the semiconductor element 251 and the substrate can be surely filled with resin or intermediate material.

  When the module semiconductor element 251 in the present embodiment is used for the substrate (not shown) shown in the second embodiment, the gap between the module semiconductor element and the substrate (not shown) A large amount of epoxy resin flows from the solder bump row 258 side. That is, the collision part in the present third embodiment is closer to the right side than the center of the semiconductor element 251 (FIG. 19, opposite side of the solder bump row 258).

  Therefore, in the third embodiment, the solder bumps 252a in the third to fifth rows in the second to fourth rows of the solder bump row 254 are all grounded solder bumps, and these solder bumps 252a are soldered. The nine attached ground electrodes are connected by a conductor to form an island 261 (used as an example of a short circuit prevention means) by the ground electrode.

  Furthermore, an island 262 is formed by connecting the soldered solder bumps 252b in the second and seventh rows of the bump row with a conductor, and the solder in the seventh and eighth rows of the fourth bump row. An island 263 is formed by connecting the electrodes, to which the bumps 252c are soldered, with a conductor. The electrodes to which the solder bumps 264 between the islands 262 and 263 (used as an example of short-circuit prevention means) are connected are independent electrodes that are not connected to any circuit on the semiconductor element 251. Then, islands 261 and solder bumps 264 are provided in the semiconductor element 251, and the positions of the islands 261 and bumps 264 are aligned with the positions where the collision portions of the epoxy resin are formed. Therefore, the intervals 255 and 257 of the solder bump rows 258 and 256 on the side opposite to the side where the islands 261 and the bumps 264 are formed are widened so that the epoxy resin can easily enter. As described above, the island 261 and the bump 264 can prevent a short circuit from occurring in the semiconductor circuit formed in the semiconductor element 251 even if a void is generated at the collision portion.

(Embodiment 4)
This embodiment is an example of another manufacturing method with respect to the manufacturing method of the multilayer substrate in Embodiment 2, and the semiconductor elements shown in Embodiments 1, 2, and 3 are used for this embodiment. It is something that can be done. Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 20 is a flowchart of a module manufacturing method according to Embodiment 4 of the present invention. 21 to 23, the same components as those in FIGS. 4 to 18 are denoted by the same reference numerals, and the description thereof is simplified. In the first embodiment, six prepregs 141 are stacked on the substrate 101. However, in the fourth embodiment, one prepreg 302 having a thickness of about 1 mm is stacked on the substrate 101.

  Now, details of each step will be described in the order of the steps in FIG. In the second embodiment, as in the first embodiment, the semiconductor element 105 and the resistor 106 are mounted on the substrate 101 and soldered in the reflow process 115. Reference numeral 300 denotes a suspending process that is provided after the reflow process 115 and suspends the prepreg 302 (used as an example of a sheet) in which holes 319 a and 319 b (FIG. 18) are formed in the hole processing process 302 on the substrate 101. , 301 is a pressure reduction / stacking process provided after the air suspension process 300. Hereinafter, the suspension process 300 and the decompression / stacking process 301 will be described with reference to FIGS. FIG. 21 is a cross-sectional view of the suspension means in the suspension process in the second embodiment, and FIG. 22 is a cross-sectional view of the decompression / stacking means in the lamination process.

  First, the suspension process 300 (FIG. 19) will be described. In FIG. 21, the sealed container 311 has a platen 152, a guide 312 surrounding the side surface of the substrate 101, and an inclined portion 313 provided at the upper end of the guide 312, and an opening is provided above the guide 312. 314 is provided. The substrate 101 is inserted into the guide 312 of the sealed container 311 configured as described above. Here, the gap between the guide 312 and the substrate 101 is about 0.5 mm on one side, and the substrate 101 is positioned by the guide 312.

  Then, the prepreg 302 is placed so as to cover the opening 314. At this time, the width 315 of the prepreg 302 is larger than the width 316 of the guide 312 and smaller than the opening dimension 313 a of the inclined portion 313. Thus, in the suspension process 300, the prepreg 302 is held in a suspended state by the inclined portion 313. A copper foil 145 is laminated on the prepreg 302. That is, in the second embodiment, the inclined portion 313 serves as a suspension unit that suspends the prepreg 302 so that a gap is formed between the prepreg 302 and the semiconductor element 105 or the resistor 106 so as not to contact each other.

  In addition, the prepreg 302 in the fourth embodiment uses an epoxy resin 317 having a viscosity at room temperature in order to reduce heating by reducing the viscosity as soon as possible and to manufacture a module with less energy. ing. Therefore, the end portion 302 a of the prepreg 302 is in close contact with the inclined portion 313. As a result, the platen 152, the guide 312, the inclined portion 313, and the prepreg 302 are sealed. That is, in the fourth embodiment, the prepreg 302 itself forms the lid of the sealed container 311.

  The vacuuming means (not shown) sucks air from the hole 318 provided in the guide 312 while being covered with the prepreg 302. By reducing the pressure, the inside of the sealed container 311 becomes negative pressure, and the prepreg 302 moves downward along the inclined portion 313 and the guide 312. In the second embodiment, the hole 318 is provided near the lower end of the guide 312. The hole 318 is desirably provided below the prepreg surface that descends due to the reduced pressure. Thereby, even if air is extracted from the hole 318, the prepreg 302 is not sucked and can be surely evacuated.

  FIG. 22 is a cross-sectional view of the decompression / laminating means in the decompression / lamination process of the fourth embodiment. As shown in FIG. 22, the prepreg 302 stops in contact with the upper surface of the semiconductor element 105 and the upper surface of the resistor 106, and the prepreg 302 is stacked on the substrate 101. In this state, the prepreg 302 is held in a state where a negative pressure is applied due to evacuation.

  Thereby, bubbles containing air do not remain between the semiconductor element 105 and the resistor 106 and the prepreg 302. Accordingly, adhesion between the prepreg 302 and the upper surface 105c of the semiconductor element 105 and the upper surface 106a of the resistor 106 can be improved, and a highly reliable module can be obtained.

  FIG. 23 is a cross-sectional view of the integration means in the integration step 303. 20 and 23, reference numeral 303 denotes an integration process provided after the decompression / lamination process. In this integration step 303, the upper platen 321 heats, compresses, and cools the prepreg 302, so that the gaps 156 and 157 are filled with the epoxy resin 317 and the substrate 101 and the prepreg 302 are integrated.

  In this integration step 303, 304 is a softening step provided after the pressure reduction / compression step 301. In this softening step 304, the heaters 160 provided on the platen 152 and the upper platen 321 are heated and the prepreg 302 is heated. Is softened to a temperature at which it can flow. In addition, since the prepreg 302 in this Embodiment 2 uses what has a substantially fluid state at normal temperature, the supply of heat in the softening process can be reduced. Therefore, it is energy saving.

  Then, in the forced inflow step 305 provided after the softening step 304, the epoxy resin 317 is caused to flow as in the second embodiment. Therefore, the platen 321 is moved so that the epoxy resin 317 flowing into the gaps 156 and 157 does not exceed the temperature at which curing starts due to the temperature rise due to frictional heat or pressure loss due to the inflow. As described above, when the temperature of the epoxy resin 317 is about 100 ° C., a sudden pressure (speed) is applied to force the gap to flow into the gaps 156 and 157, so that an intermediate material is separately injected into the gaps 156 and 157. There is no need. In the fourth embodiment, the temperature at which the epoxy resin 317 starts to cure is about 110 ° C. to 150 ° C., and the epoxy resin 317 starts an addition polymerization reaction when held at 110 ° C. to 150 ° C. for about 10 minutes. Is used.

  Note that a position sensor (not shown) is provided on the upper platen 321 of the second embodiment. The control circuit compares the signal from the position sensor with the position data of the upper platen 321 stored in advance in a memory (not shown), and determines that the upper platen 321 is at the specified position. A command to stop is sent to the servo motor connected to H.321.

  Here, since no hole is provided in the prepreg 302, the gap 331 formed around the semiconductor element 105 and the resistor 106 in the fourth embodiment is larger than the gaps 143 and 144 formed in the first embodiment. . Therefore, by setting the temperature of the forced inflow step 305 in the second embodiment to 100 ° C., the epoxy resin 317 can be reliably filled into the gap 331 and the gaps 156 and 157.

  Reference numeral 306 denotes a curing process provided after the forced inflow process 305. The epoxy resin 317 is completely cured by setting the temperature to 150 ° C. in the curing process 306. And after making it harden | cure completely in the hardening process 306, it cools gradually in the slow cooling process 124, and cut | disconnects in the cutting process 125 after that.

  As described above, since the decompression / stacking step 301 is provided before the integration step 303, bubbles containing air do not remain between the semiconductor element 105 and the resistor 106 and the prepreg 302. Accordingly, adhesion between the prepreg 302 and the upper surface 105c of the semiconductor element 105 and the upper surface 106a of the resistor 106 can be improved, and a highly reliable module can be obtained.

  Further, as in the second embodiment, the prepreg 302 does not need to be provided with holes corresponding to the semiconductor element 105 and the resistor 106 in advance, so that the hole processing step 117 in the second embodiment is not necessary. Therefore, an inexpensive module can be obtained.

  Further, in the fourth embodiment, since a hole corresponding to the height of the component is not necessary, the number of the prepreg 302 may be one. Therefore, it is only necessary to stack one prepreg 302, so that a low-cost module can be obtained.

  Furthermore, since the prepreg 302 only needs to be placed on the inclined portion 313, the laminating operation can be performed very easily. Therefore, a low-priced module can be realized.

  Furthermore, since the hole 318 is provided in the guide 312, the gap between the substrate 101 and the guide 312 can be reduced. Therefore, the guide 312 positions the substrate 101 with high accuracy and prevents the prepreg 302 from flowing out. Therefore, since the epoxy resin 317 flows into the gap 331 and the gaps 156 and 157, no voids are generated, and the epoxy resin 317 can be reliably filled into the gaps 156 and 157.

  Note that the semiconductor element 51 or the semiconductor element 251 according to the second or third embodiment can also be used for this embodiment.

  The module manufacturing method according to the present invention reliably fills the gap simultaneously with the resin sheet and the substrate integration process without previously filling the gap between the electronic component and the substrate with an intermediate material or the like. It is useful when used for portable electronic devices and the like that need to be miniaturized.

Sectional drawing of the module in the injection process of the module of Embodiment 1 of this invention Same as above, sectional view of the module in the mounting process Sectional view of the module in the semiconductor element mounting process Same as above, enlarged sectional view of the main part of the module in the injection process Manufacturing flowchart of module according to Embodiment 2 of the present invention Sectional drawing of the module in Embodiment 2 Same as above, sectional view of module in flux application process Same as above, sectional view of module in cream solder printing process Same as above, sectional view of the module in the mounting process Same as above, cross-sectional view of module in reflow process Sectional view of the module in the prepreg lamination process Same as above, sectional view of integration means in the integration process Same as above, sectional view of integration means in vacuuming process Same as above, sectional view of integration means in softening process Same as above, sectional view of the integration means in the forced inflow process Same as above, enlarged sectional view of the main part of the module in the forced inflow process Sectional view of cutting means in the cutting process Characteristic of epoxy resin Bottom view of module semiconductor element according to the third embodiment Manufacturing flowchart of module in embodiment 4 Same as above, sectional view of suspension means in the suspension process Same as above, sectional view of decompression / stacking means in decompression / stacking process Same as above, sectional view of integration means in the integration process Manufacturing flowchart for conventional modules Same as above, sectional view of the module in the electronic component mounting process Sectional view of the module in the semiconductor element mounting process Same as above, sectional view of the module in the intermediate material injection process

Explanation of symbols

51 Semiconductor Element 52a Gold Bump 52b Gold Bump 53a Gap 53b Gap

Claims (11)

A semiconductor element on which a semiconductor circuit is formed; and a connection bump connected to a plurality of electrodes arranged on the lower surface side of the semiconductor element, wherein a plurality of the connection bumps are arranged and between adjacent connection bumps A plurality of first bump arrangement portions arranged such that the first gap is formed, and a second gap having an opening area larger than the opening area of the first gap. A module semiconductor device having a second bump array portion on which the connection bumps are arrayed. The first bump array portion includes a first electrode and a second electrode that is electrically independent of the first electrode, and is disposed between the second electrode and the first electrode. 2. The module semiconductor device according to claim 1, further comprising a short-circuit prevention unit that prevents a short-circuit between the first electrode and the second electrode. The module semiconductor element according to claim 1, wherein the second array part is provided in the vicinity of the outer peripheral part of the semiconductor element. The module semiconductor element according to claim 1, wherein the connection bump of the second bump array portion has a higher melting point than the connection bump of the first bump array portion. The module semiconductor element according to claim 1, wherein the size of the connection bumps is sequentially increased from the first bump arrangement portion side toward the second bump connection portion side. 2. The module semiconductor device according to claim 1, wherein an interval between the connection bumps in the second bump array portion is larger than an interval between the connection bumps in the first bump connection portion. A module semiconductor element according to claim 1, comprising a substrate, a land provided on an upper surface side of the substrate, and a connection bump on the land, and the module semiconductor on the upper surface of the substrate. A module in which a sheet of resin having a resin flow embedded portion is laminated on the outer peripheral portion of the element, and the resin flows into a gap between the substrate and the lower surface of the module semiconductor element. The resin is a thermosetting resin that has fluidity in the first temperature range and that cures in the second temperature range higher than the first temperature range, and the melting point of the connection bump is the upper limit of the first temperature range. The module according to claim 8, wherein the module is higher than the temperature. The module semiconductor element according to claim 1 is mounted on a land formed on the upper surface side of the substrate, and the land and the connection bump of the semiconductor element are connected. Thereafter, the lower surface of the semiconductor element and the A method for manufacturing a module, comprising a heating step of allowing a resin to flow into a gap formed between the upper surface of the substrate and then curing the resin, wherein the resin flows from a side surface on the second bump array side . The land formed on the upper surface of the substrate and the connection bumps of the module semiconductor element according to claim 1 are connected, and then a resin sheet is laminated on the upper surface side of the substrate, and the semiconductor element is formed on the upper surface side of the substrate And a module for arranging a gap between the lower surface of the sheet and the upper surface of the substrate in the outer peripheral portion of the semiconductor element, and then compressing the sheet and thereafter heating and curing the sheet In the production method, the resin has a fluidity in a first temperature range and a thermosetting resin having a non-flowability in a second temperature range higher than the first temperature range, and the temperature of the sheet is When the sheet is in the first temperature range, the sheet is compressed, the resin is flowed, and the gap formed between the substrate and the module semiconductor element and the gap Method of manufacturing a module to fill. The method of manufacturing a module according to claim 10, wherein the temperature of the resin when the sheet is compressed is lower than the melting point of the connection bump.

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