JP2006210692A5 - - Google Patents

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Publication number
JP2006210692A5
JP2006210692A5 JP2005021445A JP2005021445A JP2006210692A5 JP 2006210692 A5 JP2006210692 A5 JP 2006210692A5 JP 2005021445 A JP2005021445 A JP 2005021445A JP 2005021445 A JP2005021445 A JP 2005021445A JP 2006210692 A5 JP2006210692 A5 JP 2006210692A5
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JP
Japan
Prior art keywords
well layer
layer
formed above
semiconductor light
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005021445A
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English (en)
Japanese (ja)
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JP2006210692A (ja
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Publication date
Application filed filed Critical
Priority to JP2005021445A priority Critical patent/JP2006210692A/ja
Priority claimed from JP2005021445A external-priority patent/JP2006210692A/ja
Priority to KR1020050126528A priority patent/KR100752007B1/ko
Priority to TW094146488A priority patent/TWI284994B/zh
Priority to CNB2006100027584A priority patent/CN100403566C/zh
Priority to US11/340,746 priority patent/US7629619B2/en
Publication of JP2006210692A publication Critical patent/JP2006210692A/ja
Publication of JP2006210692A5 publication Critical patent/JP2006210692A5/ja
Withdrawn legal-status Critical Current

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JP2005021445A 2005-01-28 2005-01-28 ３族窒化物系化合物半導体発光素子 Withdrawn JP2006210692A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005021445A JP2006210692A (ja) 2005-01-28 2005-01-28 ３族窒化物系化合物半導体発光素子
KR1020050126528A KR100752007B1 (ko) 2005-01-28 2005-12-21 3족 질화물계 화합물 반도체 발광 소자 및 그 제조 방법
TW094146488A TWI284994B (en) 2005-01-28 2005-12-26 Group III nitride-based compound semiconductor light-emitting device and method for producing the same
CNB2006100027584A CN100403566C (zh) 2005-01-28 2006-01-25 Ⅲ族氮化物系化合物半导体发光元件及其制造方法
US11/340,746 US7629619B2 (en) 2005-01-28 2006-01-27 Group III nitride-based compound semiconductor light-emitting device and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005021445A JP2006210692A (ja) 2005-01-28 2005-01-28 ３族窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2006210692A JP2006210692A (ja) 2006-08-10
JP2006210692A5 true JP2006210692A5 (zh) 2007-09-27

Family

ID=36919092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005021445A Withdrawn JP2006210692A (ja) 2005-01-28 2005-01-28 ３族窒化物系化合物半導体発光素子

Country Status (1)

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JP (1) JP2006210692A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021290A (ja) 2008-07-09 2010-01-28 Sumitomo Electric Ind Ltd 量子井戸構造の製造方法
JP5572976B2 (ja) 2009-03-26 2014-08-20 サンケン電気株式会社 半導体装置
DE102009037416B4 (de) * 2009-08-13 2021-10-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch gepumpter optoelektronischer Halbleiterchip
JP2011151422A (ja) * 2009-12-10 2011-08-04 Dowa Electronics Materials Co Ltd ｐ型ＡｌＧａＮ層およびＩＩＩ族窒化物半導体発光素子
DE102016116425A1 (de) 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP7405554B2 (ja) * 2019-10-01 2023-12-26 旭化成株式会社 紫外線発光素子
JP7318603B2 (ja) 2020-07-09 2023-08-01 豊田合成株式会社 Ｉｉｉ族窒化物半導体素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JPH1126812A (ja) * 1997-07-01 1999-01-29 Toyoda Gosei Co Ltd ３族窒化物半導体素子及びその製造方法
GB2327145A (en) * 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device

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