JP2006202909A5 - - Google Patents

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Publication number
JP2006202909A5
JP2006202909A5 JP2005011850A JP2005011850A JP2006202909A5 JP 2006202909 A5 JP2006202909 A5 JP 2006202909A5 JP 2005011850 A JP2005011850 A JP 2005011850A JP 2005011850 A JP2005011850 A JP 2005011850A JP 2006202909 A5 JP2006202909 A5 JP 2006202909A5
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JP
Japan
Prior art keywords
substrate
sensor chip
sensor
housing
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005011850A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006202909A (ja
JP4578251B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005011850A priority Critical patent/JP4578251B2/ja
Priority claimed from JP2005011850A external-priority patent/JP4578251B2/ja
Priority to TW095101615A priority patent/TW200642090A/zh
Priority to PCT/JP2006/300615 priority patent/WO2006077867A1/ja
Publication of JP2006202909A publication Critical patent/JP2006202909A/ja
Priority to US11/826,647 priority patent/US20070262306A1/en
Publication of JP2006202909A5 publication Critical patent/JP2006202909A5/ja
Application granted granted Critical
Publication of JP4578251B2 publication Critical patent/JP4578251B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005011850A 2005-01-19 2005-01-19 微小構造体を有する半導体装置および微小構造体の製造方法 Expired - Fee Related JP4578251B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005011850A JP4578251B2 (ja) 2005-01-19 2005-01-19 微小構造体を有する半導体装置および微小構造体の製造方法
TW095101615A TW200642090A (en) 2005-01-19 2006-01-16 Semiconductor device having minute structure and method of manufacturing minute structure
PCT/JP2006/300615 WO2006077867A1 (ja) 2005-01-19 2006-01-18 微小構造体を有する半導体装置および微小構造体の製造方法
US11/826,647 US20070262306A1 (en) 2005-01-19 2007-07-17 Semiconductor device having microstructure and method of manufacturing microstructure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005011850A JP4578251B2 (ja) 2005-01-19 2005-01-19 微小構造体を有する半導体装置および微小構造体の製造方法

Publications (3)

Publication Number Publication Date
JP2006202909A JP2006202909A (ja) 2006-08-03
JP2006202909A5 true JP2006202909A5 (enExample) 2007-12-13
JP4578251B2 JP4578251B2 (ja) 2010-11-10

Family

ID=36692256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005011850A Expired - Fee Related JP4578251B2 (ja) 2005-01-19 2005-01-19 微小構造体を有する半導体装置および微小構造体の製造方法

Country Status (4)

Country Link
US (1) US20070262306A1 (enExample)
JP (1) JP4578251B2 (enExample)
TW (1) TW200642090A (enExample)
WO (1) WO2006077867A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090095095A1 (en) * 2006-11-02 2009-04-16 Tokyo Electron Limited Microstructure inspecting apparatus, microstructure inspecting method and substrate holding apparatus
JP5547147B2 (ja) * 2011-09-13 2014-07-09 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
US10976542B2 (en) * 2018-01-26 2021-04-13 Analog Photonics LLC Aberration correction of optical phased arrays
CN108622847A (zh) * 2018-05-03 2018-10-09 河北美泰电子科技有限公司 Mems传感器的封装方法及封装结构
JP7755462B2 (ja) * 2021-11-16 2025-10-16 株式会社東芝 センサ及び電子装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254969A (ja) * 1985-09-03 1987-03-10 Mitsubishi Electric Corp 半導体圧力センサの製造方法
JPS63118628A (ja) * 1986-11-06 1988-05-23 Sumitomo Electric Ind Ltd 半導体圧力センサのブリツジ回路調整方法
JPH0595046A (ja) * 1991-10-02 1993-04-16 Matsushita Electric Works Ltd センサー形成済基板のダイシング方法
JP2002005951A (ja) * 2000-06-26 2002-01-09 Denso Corp 半導体力学量センサ及びその製造方法
JP2003315196A (ja) * 2002-04-25 2003-11-06 Denso Corp 圧力センサの製造方法およびその製造方法に用いる測定装置
JP2006003101A (ja) * 2004-06-15 2006-01-05 Canon Inc 半導体圧力センサの特性評価装置および特性評価方法

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