JP2006196650A5 - - Google Patents

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Publication number
JP2006196650A5
JP2006196650A5 JP2005006232A JP2005006232A JP2006196650A5 JP 2006196650 A5 JP2006196650 A5 JP 2006196650A5 JP 2005006232 A JP2005006232 A JP 2005006232A JP 2005006232 A JP2005006232 A JP 2005006232A JP 2006196650 A5 JP2006196650 A5 JP 2006196650A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005006232A
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JP2006196650A (ja
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Publication date
Application filed filed Critical
Priority to JP2005006232A priority Critical patent/JP2006196650A/ja
Priority claimed from JP2005006232A external-priority patent/JP2006196650A/ja
Publication of JP2006196650A publication Critical patent/JP2006196650A/ja
Publication of JP2006196650A5 publication Critical patent/JP2006196650A5/ja
Pending legal-status Critical Current

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JP2005006232A 2005-01-13 2005-01-13 半導体不揮発性メモリ装置およびその消去方法 Pending JP2006196650A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005006232A JP2006196650A (ja) 2005-01-13 2005-01-13 半導体不揮発性メモリ装置およびその消去方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005006232A JP2006196650A (ja) 2005-01-13 2005-01-13 半導体不揮発性メモリ装置およびその消去方法

Publications (2)

Publication Number Publication Date
JP2006196650A JP2006196650A (ja) 2006-07-27
JP2006196650A5 true JP2006196650A5 (ja) 2007-06-28

Family

ID=36802489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005006232A Pending JP2006196650A (ja) 2005-01-13 2005-01-13 半導体不揮発性メモリ装置およびその消去方法

Country Status (1)

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JP (1) JP2006196650A (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602005009937D1 (de) * 2005-06-03 2008-11-06 Imec Inter Uni Micro Electr Extraktionsverfahren für die Lastverteilung in einem Halbleiterbauelement
JP4950490B2 (ja) * 2005-12-28 2012-06-13 株式会社東芝 不揮発性スイッチング素子およびその製造方法ならびに不揮発性スイッチング素子を有する集積回路
US20100025811A1 (en) * 2006-11-29 2010-02-04 Gary Bronner Integrated circuit with built-in heating circuitry to reverse operational degeneration
US11244727B2 (en) 2006-11-29 2022-02-08 Rambus Inc. Dynamic memory rank configuration
US8344475B2 (en) 2006-11-29 2013-01-01 Rambus Inc. Integrated circuit heating to effect in-situ annealing
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP2010538497A (ja) * 2007-09-05 2010-12-09 ラムバス・インコーポレーテッド 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置
KR20090086815A (ko) 2008-02-11 2009-08-14 삼성전자주식회사 메모리 장치 및 메모리 열처리 방법
KR20100013485A (ko) * 2008-07-31 2010-02-10 삼성전자주식회사 메모리 장치 및 웨어 레벨링 방법
US8488387B2 (en) * 2011-05-02 2013-07-16 Macronix International Co., Ltd. Thermally assisted dielectric charge trapping flash
JP6556556B2 (ja) * 2015-08-20 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US11989091B2 (en) 2021-11-12 2024-05-21 Samsung Electronics Co., Ltd. Memory system for performing recovery operation, memory device, and method of operating the same

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