JP2006190872A5 - - Google Patents
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- Publication number
- JP2006190872A5 JP2006190872A5 JP2005002353A JP2005002353A JP2006190872A5 JP 2006190872 A5 JP2006190872 A5 JP 2006190872A5 JP 2005002353 A JP2005002353 A JP 2005002353A JP 2005002353 A JP2005002353 A JP 2005002353A JP 2006190872 A5 JP2006190872 A5 JP 2006190872A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- porous insulating
- manufacturing
- semiconductor device
- dense layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000002344 surface layer Substances 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000000280 densification Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005002353A JP4408816B2 (ja) | 2005-01-07 | 2005-01-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005002353A JP4408816B2 (ja) | 2005-01-07 | 2005-01-07 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006190872A JP2006190872A (ja) | 2006-07-20 |
| JP2006190872A5 true JP2006190872A5 (enrdf_load_stackoverflow) | 2008-02-14 |
| JP4408816B2 JP4408816B2 (ja) | 2010-02-03 |
Family
ID=36797793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005002353A Expired - Fee Related JP4408816B2 (ja) | 2005-01-07 | 2005-01-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4408816B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5218412B2 (ja) * | 2007-09-10 | 2013-06-26 | 富士通株式会社 | ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置 |
| JP5671220B2 (ja) | 2009-08-25 | 2015-02-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN104284997B (zh) * | 2012-03-09 | 2016-08-17 | 气体产品与化学公司 | 在薄膜晶体管器件上制备含硅膜的方法 |
| JP6237429B2 (ja) | 2014-04-14 | 2017-11-29 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3208100B2 (ja) * | 1997-10-30 | 2001-09-10 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜の形成方法 |
| JPH1140554A (ja) * | 1997-07-22 | 1999-02-12 | Fujitsu Ltd | 絶縁膜形成材料、並びにこれを用いた絶縁膜形成方法及び半導体装置 |
| JP3990920B2 (ja) * | 2001-03-13 | 2007-10-17 | 東京エレクトロン株式会社 | 膜形成方法及び膜形成装置 |
| US6541842B2 (en) * | 2001-07-02 | 2003-04-01 | Dow Corning Corporation | Metal barrier behavior by SiC:H deposition on porous materials |
| US20030054115A1 (en) * | 2001-09-14 | 2003-03-20 | Ralph Albano | Ultraviolet curing process for porous low-K materials |
| US7749563B2 (en) * | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
| TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| US8137764B2 (en) * | 2003-05-29 | 2012-03-20 | Air Products And Chemicals, Inc. | Mechanical enhancer additives for low dielectric films |
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2005
- 2005-01-07 JP JP2005002353A patent/JP4408816B2/ja not_active Expired - Fee Related