JP2006165530A5

JP2006165530A5 -

Info

Publication number: JP2006165530A5
Application number: JP2005325368A
Authority: JP
Filing date: 2005-11-09
Publication date: 2008-12-25

Description

本発明に係る受容した電磁波を検知するセンサは、
第１の電極と、第２の電極と、該第１の電極と該第２の電極との間に設けられている非晶質酸化物層とを備えることを特徴とする。
The sensor for detecting the received electromagnetic wave according to the present invention,
A first electrode, a second electrode, characterized in that it comprises a non-crystalline oxide layer provided between the first electrode and the second electrode.

Claims

A sensor for detecting received electromagnetic waves,
Sensor characterized in that it comprises a first electrode, a second electrode, and an amorphous oxide layer provided between the first electrode and the second electrode.

The sensor according to claim 1, wherein the amorphous oxide layer has an electron carrier concentration of less than 10 ¹⁸ / cm ³ .

The sensor according to claim 1, wherein the amorphous oxide layer includes at least one of In, Zn, and Sn.

The amorphous oxide layer is any one of an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, or an oxide containing In. The sensor according to claim 1 or 2.

The sensor according to claim 1, wherein the amorphous oxide layer contains In, Ga, and Zn.

The sensor according to any one of claims 1 to 5, wherein the first electrode is transmissive to light in a wavelength region in which the amorphous oxide layer is sensitive.

The sensor according to claim 1, wherein an organic dye is provided in the amorphous oxide layer.

The sensor according to any one of claims 1 to 7, wherein the first and second electrodes and the amorphous oxide layer are provided on a flexible substrate.

Wherein between the first electrode and the second electrode, the sensor according to any one of claims 1 to 8, characterized in that it comprises a plurality of the amorphous oxide layer.

A sensor for detecting received electromagnetic waves,
An amorphous oxide layer provided between the first electrode and the second electrode,
The amorphous oxide layer contains at least one element of Zn, In, and Sn, and is an amorphous oxide that shows a tendency that the electron carrier concentration increases and the electron mobility increases. A featured sensor.

An imaging device comprising:
A flexible substrate;
An X-ray sensor provided on the flexible substrate;
A field effect transistor for reading a signal from the X-ray sensor,
The field effect transistor has an amorphous oxide as an active layer, and the amorphous oxide has an electron carrier concentration of less than 10 ¹⁸ / cm ³ , or the amorphous oxide An imaging device characterized by being an oxide containing at least one element of Zn, In, and Sn, and having an electron carrier concentration and a tendency to increase electron mobility.

The imaging device according to claim 11, comprising a non-planar region including the X-ray sensor and the field effect transistor .

The imaging apparatus according to claim 11, wherein the X-ray sensor includes a scintillator that converts X-rays into light and a photoelectric conversion element.

The imaging apparatus according to claim 11, wherein the X-ray sensor includes a semiconductor layer, and the semiconductor layer is made of an amorphous oxide.

An imaging device comprising:
A substrate having a non-planar region,
An X-ray sensor provided on the substrate;
A field effect transistor for reading a signal from the X-ray sensor,
The field effect transistor is a normally-off transistor having an active layer made of an amorphous oxide.