JP2006161127A - Electronic material suitable for insertion type connection terminal and method for producing the same - Google Patents

Electronic material suitable for insertion type connection terminal and method for producing the same Download PDF

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JP2006161127A
JP2006161127A JP2004357103A JP2004357103A JP2006161127A JP 2006161127 A JP2006161127 A JP 2006161127A JP 2004357103 A JP2004357103 A JP 2004357103A JP 2004357103 A JP2004357103 A JP 2004357103A JP 2006161127 A JP2006161127 A JP 2006161127A
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tin
plating
copper
layer
nickel
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Fumio Oshita
文夫 大下
Yoshiharu Kikuchi
義治 菊池
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TAKAMATSU MEKKI KK
Yuken Industry Co Ltd
Yuken Kogyo Co Ltd
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TAKAMATSU MEKKI KK
Yuken Industry Co Ltd
Yuken Kogyo Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To produce an electronic material with tin based plating suitable for an insertion type connection terminal which can prevent the generation of insertion whiskers caused by pressure at the time of insertion in an insertion type connection terminal. <P>SOLUTION: An electrically conductive substrate composed of copper or a copper alloy is subjected to nickel plating as a substrate and flash copper plating with a thickness of 0.05 to 0.5 μm in order, and is next subjected to tin or tin alloy plating. In the obtained electronic material with the tin based plating, with the lapse of time or under reflowing at ≥210°C, the flash copper plating layer is mutually diffused with the nickel plating layer as a substrate, so as to be changed into a barrier layer composed of a copper-nickel alloy layer, and prevents the growth of acicular or columnar crystals caused by intermetallic compounds in the tin or tin alloy plating film. By the alloy layer considered as a solid solution, the generation of insertion whiskers can be effectively suppressed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、嵌合型接続端子に適した電子材料とその製造方法とに関する。本発明により、嵌合型接続端子の挿入時の圧力によるウィスカ(嵌合ウィスカ)の発生が抑制された嵌合型接続端子を形成できる電子材料が提供される。   The present invention relates to an electronic material suitable for a fitting-type connection terminal and a manufacturing method thereof. According to the present invention, there is provided an electronic material capable of forming a fitting type connection terminal in which the generation of whiskers (fitting whiskers) due to pressure during insertion of the fitting type connection terminal is suppressed.

自動車や各種電気・電子機器の電気配線のコネクタに使用される嵌合型接続端子は、銅または銅合金といった金属からなる導電性基体の表面に錫めっき(または錫合金めっき)が施された構造を持つ。錫めっきの主な目的は、端子の接続時に端子部の錫めっきの表面酸化皮膜が摩擦によって破壊されることにより、新鮮な錫が凝着して低い接触抵抗を安定して得るためである。こうして得られる錫めっきの接触抵抗は、高価な銀めっきに匹敵するほど小さい。錫めっきには、その後にはんだ付けする場合のはんだ付け性にも優れており、光沢めっきが可能で、外観も美麗であるという利点もある。   Fitting type connection terminals used for electrical wiring connectors of automobiles and various electric / electronic devices have a structure in which tin plating (or tin alloy plating) is applied to the surface of a conductive substrate made of metal such as copper or copper alloy have. The main purpose of the tin plating is that the tin-plated surface oxide film of the terminal portion is destroyed by friction when the terminals are connected, so that fresh tin adheres to stably obtain a low contact resistance. The contact resistance of the tin plating thus obtained is so small that it is comparable to expensive silver plating. Tin plating is also excellent in solderability when it is subsequently soldered, and has the advantages that it can be brightly plated and has a beautiful appearance.

錫めっきの一般的な問題点として、めっき後の環境変化によりウィスカと呼ばれるヒゲ状の析出物が生成し、短絡等の原因となることは良く知られている。以下、このウィスカを経時ウイスカと称する。経時ウィスカは、錫めっき皮膜の応力に原因があると考えられており、めっき皮膜の応力を解放するために、錫めっき後にリフローと呼ばれる熱処理を行うことが多い。   As a general problem of tin plating, it is well known that a whisker-like precipitate called whisker is generated due to an environmental change after plating, which causes a short circuit or the like. Hereinafter, this whisker is referred to as a timed whisker. Temporal whiskers are considered to be caused by the stress of the tin plating film, and in order to release the stress of the plating film, a heat treatment called reflow is often performed after tin plating.

ウィスカの抑制には銅または銅合金の基体の表面に下地ニッケルめっきを施すことが有効であることが知られている(非特許文献1参照)。
導電性基体が黄銅のような亜鉛含有銅合金である場合、基体から亜鉛が錫めっき皮膜中に拡散して、めっき皮膜の表面に酸化亜鉛の層が生ずる。特にリフロー中には亜鉛の拡散が起こり易い。めっき表面に生成した酸化亜鉛の層は、めっき皮膜の耐食性を低下と変色を生ずる上、接触抵抗の著しい増大をもたらす。下地ニッケルめっきは、亜鉛等の成分が基体から錫めっき皮膜中に拡散するのを防止するバリア層としても利用されている。
In order to suppress whiskers, it is known that it is effective to perform base nickel plating on the surface of a copper or copper alloy substrate (see Non-Patent Document 1).
When the conductive substrate is a zinc-containing copper alloy such as brass, zinc diffuses from the substrate into the tin plating film, and a zinc oxide layer is formed on the surface of the plating film. In particular, zinc diffusion tends to occur during reflow. The zinc oxide layer formed on the plating surface reduces the corrosion resistance of the plating film and causes discoloration, and causes a significant increase in contact resistance. Underlying nickel plating is also used as a barrier layer for preventing components such as zinc from diffusing from the substrate into the tin plating film.

特許文献1には、銅−亜鉛合金の母材の表面に、ニッケルめっき層、銅めっき層、および錫めっき層をこの順で形成した後、熱処理を行って、銅めっき層と錫めっき層との界面近傍にCuSn金属間化合物を生成させる嵌合型接続端子の製造方法が記載されている。ニッケルめっき層は、母材からの亜鉛の拡散を防止するバリア層である。このニッケル層の上に銅めっき層を形成するのは、銅めっき層と錫めっき層との界面近傍にCuSn金属間化合物を生成させるためである。CuSn金属間化合物を生成させるための熱処理は150〜170℃で行う。熱処理温度が170℃を超えると、金属間化合物が柱状晶のCuSnに変化し、表面凹凸が大きくなって端子の接触抵抗が増大する。 In Patent Document 1, a nickel plating layer, a copper plating layer, and a tin plating layer are formed in this order on the surface of a copper-zinc alloy base material, and then heat treatment is performed. Describes a method for manufacturing a fitting-type connection terminal in which a Cu 6 Sn 5 intermetallic compound is formed in the vicinity of the interface. The nickel plating layer is a barrier layer that prevents diffusion of zinc from the base material. The reason why the copper plating layer is formed on the nickel layer is to form a Cu 6 Sn 5 intermetallic compound in the vicinity of the interface between the copper plating layer and the tin plating layer. The heat treatment for generating the Cu 6 Sn 5 intermetallic compound is performed at 150 to 170 ° C. When the heat treatment temperature exceeds 170 ° C., the intermetallic compound is changed to columnar Cu 3 Sn, and the surface unevenness is increased to increase the contact resistance of the terminal.

特許文献2には、銅または銅合金からなる基体の上に、銅−錫合金層と表面の錫もしくは錫合金めっき層を有し、その上にさらに有機潤滑皮膜が形成された錫めっき付きコネクタ用の電子材料が記載されている。銅−錫合金層は、錫めっきとその下に形成された銅または銅合金めっき層とが熱処理を受けることにより形成され、この銅−錫合金層の下にニッケル層を有していてもよい。段落0006には、銅−錫合金層は全部または大部分が銅−錫金属間化合物のη相からなるものであると記載されている。リフロー熱処理は230〜600℃で行われる。
電気鍍金研究会編「環境調和型めっき技術」26頁 特開平11−135226号公報(特許請求の範囲、段落0010、0029、0030) 特開2003−183882号公報(特許請求の範囲、段落0006、0012)
Patent Document 2 discloses a connector with tin plating in which a copper-tin alloy layer and a surface tin or tin alloy plating layer are formed on a base made of copper or a copper alloy, and an organic lubricating film is further formed thereon. Electronic materials for use are described. The copper-tin alloy layer is formed by subjecting tin plating and copper or copper alloy plating layer formed thereunder to a heat treatment, and may have a nickel layer under the copper-tin alloy layer. . Paragraph 0006 states that the copper-tin alloy layer is entirely or mostly composed of the η phase of a copper-tin intermetallic compound. The reflow heat treatment is performed at 230 to 600 ° C.
26th edition of “Plating Technology for Environment” JP 11-135226 A (claims, paragraphs 0010, 0029, 0030) JP 2003-183882 A (claims, paragraphs 0006 and 0012)

導電性基体の表面に錫もしくは錫合金めっき皮膜を有する電子材料から製造された嵌合型接続端子には、リフロー等により経時ウィスカ発生の防止を図った場合であっても、端子の挿入時に圧力が加わった端子部分に、嵌合ウィスカと呼ばれるウィスカが発生して、短絡の原因となるという問題点がある。   Fitting type connection terminals manufactured from an electronic material having a tin or tin alloy plating film on the surface of a conductive substrate, even when the prevention of whisker over time by reflow etc. There is a problem in that whiskers called fitting whiskers are generated in the terminal portion to which is added, causing a short circuit.

本発明は、嵌合ウィスカの発生を防止できる、嵌合型接続端子に適した錫めっき付き電子材料を提供することを課題とする。   This invention makes it a subject to provide the electronic material with a tin plating suitable for a fitting type connection terminal which can prevent generation | occurrence | production of a fitting whisker.

本発明によれば、導電性基体の表面に、ニッケルめっきとフラッシュ銅めっきとをこの順に行った後、錫もしくは錫合金めっき皮膜を形成することにより、上記課題を解決することができる。   According to the present invention, after the nickel plating and the flash copper plating are performed in this order on the surface of the conductive substrate, the above problem can be solved by forming a tin or tin alloy plating film.

ニッケルめっき層の上に形成した銅めっき層が、フラッシュめっきよる非常に薄い層であると、特許文献1、2に記載されたような銅めっき層と錫めっき皮膜との界面で銅−錫金属間化合物が生成するのではなく、銅めっき層は下地のニッケルめっき層との相互拡散により合金化し、銅めっき層が銅−ニッケル合金層に変化することが判明した。この変化は熱処理で生じさせることができるが、熱処理しない場合でも経時により起こる。   If the copper plating layer formed on the nickel plating layer is a very thin layer by flash plating, the copper-tin metal at the interface between the copper plating layer and the tin plating film as described in Patent Documents 1 and 2 It was found that the copper plating layer was alloyed by interdiffusion with the underlying nickel plating layer, and the copper plating layer was changed to a copper-nickel alloy layer, instead of forming an intercalation compound. This change can be caused by heat treatment, but it occurs with time even without heat treatment.

この変化により、導電性基体の表面にニッケル層、銅−ニッケル合金層、ならびに錫もしくは錫合金めっき皮膜をこの順に有する電子材料が得られる。銅−ニッケル合金層は、導電性基体の成分や下地めっき層のニッケルが表面の錫もしくは錫合金めっき皮膜に拡散して、めっき皮膜を変質させるのを防止するバリア層として機能する。そして、この銅−ニッケル合金層からなるバリア層が錫もしくは錫合金めっき皮膜の下に形成されていると、嵌合型接続端子の挿入時の嵌合ウィスカの発生を防止できることがわかった。   By this change, an electronic material having a nickel layer, a copper-nickel alloy layer, and a tin or tin alloy plating film in this order on the surface of the conductive substrate is obtained. The copper-nickel alloy layer functions as a barrier layer that prevents the components of the conductive substrate and the nickel of the base plating layer from diffusing into the tin or tin alloy plating film on the surface to alter the plating film. And when the barrier layer which consists of this copper-nickel alloy layer was formed under the tin or tin alloy plating film, it turned out that generation | occurrence | production of the fitting whisker at the time of insertion of a fitting type connection terminal can be prevented.

ここに、本発明は、1態様において、導電性基体の表面に、下地ニッケル層と銅−ニッケル合金からなるバリア層とを介して錫もしくは錫合金めっき皮膜を有する錫系めっき付き電子材料である。この錫系めっき付き電子材料において、前記錫もしくは錫合金めっき皮膜は、針状もしくは柱状の結晶を実質的に含有していない。   Here, the present invention, in one aspect, is an electronic material with tin plating having a tin or tin alloy plating film on a surface of a conductive substrate via a base nickel layer and a barrier layer made of a copper-nickel alloy. . In this tin-based electronic material with plating, the tin or tin alloy plating film substantially does not contain needle-like or columnar crystals.

別の態様において、本発明は、導電性基体の表面に、下地ニッケルめっき層、厚み0.05〜0.5μmのフラッシュ銅めっき層、ならびに錫もしくは錫合金めっき皮膜をこの順に有する、錫めっきめっき付き電子材料である。   In another aspect, the present invention provides a tin-plated plating having a base nickel plating layer, a flash copper plating layer having a thickness of 0.05 to 0.5 μm, and a tin or tin alloy plating film in this order on the surface of the conductive substrate. It is an electronic material.

前記導電性基体は好ましくは銅または銅合金からなる。
本発明によればまた、
・上記錫系めっき付き電子材料からなる嵌合型接続端子、ならびに
・導電性基体に、下地のニッケルめっきと厚み0.05〜0.5μmのフラッシュ銅めっきとをこの順に施し、次いで錫もしくは錫合金めっきを行うことを特徴とする、錫系めっき付き電子材料の製造方法、
もまた提供される。この製造方法は、錫もしくは錫合金めっきの後に210℃以上の温度で熱処理を行う工程をさらに含んでいてもよい。
The conductive substrate is preferably made of copper or a copper alloy.
According to the invention,
A fitting connection terminal made of the electronic material with tin plating, and a conductive base, followed by a nickel plating of a base and a flash copper plating of 0.05 to 0.5 μm in this order, and then tin or tin A method for producing an electronic material with tin plating, characterized by performing alloy plating,
Is also provided. This manufacturing method may further include a step of performing a heat treatment at a temperature of 210 ° C. or higher after the tin or tin alloy plating.

本発明に係る錫系めっき付き電子材料は、嵌合ウィスカの発生を防止できるので、特に嵌合型接続端子として好適であるが、用途はそれに限られるものではない。例えば、嵌合型ではない接続端子、スイッチ、リレー等にも使用可能である。   The electronic material with tin plating according to the present invention can prevent the occurrence of fitting whiskers, and is particularly suitable as a fitting-type connection terminal, but the application is not limited thereto. For example, it can be used for connection terminals, switches, relays and the like that are not of a fitting type.

前述したように、錫もしくは錫合金からなる錫系めっき皮膜に対して、ウィスカ抑制または導電性基体からの拡散防止の目的で、基体と錫系めっき皮膜との間に下地ニッケルめっき層を形成することが行われてきた。   As described above, an underlying nickel plating layer is formed between the base and the tin-based plating film for the purpose of suppressing whisker or preventing diffusion from the conductive base on the tin-based plating film made of tin or tin alloy. Things have been done.

しかし、本発明者らが下地ニッケルめっきについて検討した結果、リフロー等の熱処理中(または長期の経時中)に、下地ニッケルめっきが上層の錫系めっき皮膜中に拡散して合金化し、下地ニッケルめっきは錫−ニッケル合金層に変化し、基体と錫系めっき皮膜の界面に錫−ニッケル合金層が生成することが判明した。この合金層は、実際には錫−ニッケル金属間化合物(NiSn)からなると考えられる。その場合、錫系めっき皮膜の見かけ硬度が著しく増大し、嵌合型接続端子とした場合に挿入時の圧力によって嵌合ウィスカが発生しやすくなる。 However, as a result of the study of the underlying nickel plating by the present inventors, the underlying nickel plating diffuses into the upper tin-based plating film during the heat treatment such as reflow (or during a long period of time) and forms an alloy. Turned into a tin-nickel alloy layer, and it was found that a tin-nickel alloy layer was formed at the interface between the substrate and the tin-based plating film. It is considered that this alloy layer is actually composed of a tin-nickel intermetallic compound (Ni x Sn y ). In that case, the apparent hardness of the tin-based plating film is remarkably increased, and fitting whiskers are likely to occur due to the pressure at the time of insertion when the fitting type connection terminal is used.

この点についてより詳しく説明すると、上記界面に形成されたNiSnで示される錫−ニッケル金属間化合物からなる錫−ニッケル合金層は、図1のリフロー後の図に模式的に示すように、針状または柱状の形態をとり、錫系めっき皮膜の厚み方向に成長する。この針状または柱状晶(以下、単に針状晶という)の生成は、図3(a)に示す断面顕微鏡写真においても観察される。この写真からは、一部の針状晶が錫系めっき皮膜を厚み方向に貫通するまで成長することがわかる。このような針状晶が生成する理由は次のように推測される。 This point will be described in more detail. A tin-nickel alloy layer made of a tin-nickel intermetallic compound represented by Ni x Sn y formed at the interface is schematically shown in the figure after reflow in FIG. It takes the form of needles or columns and grows in the thickness direction of the tin-based plating film. The formation of needle-like or columnar crystals (hereinafter simply referred to as needle-like crystals) is also observed in the cross-sectional micrograph shown in FIG. From this photograph, it can be seen that some needle crystals grow until they penetrate the tin-based plating film in the thickness direction. The reason why such needle-like crystals are generated is presumed as follows.

ニッケルは銅より錫の方により容易に拡散する。従って、リフローまたは経時中にニッケルは下層の銅系基体ではなく、上層の錫系めっき皮膜中に拡散する。この場合、ニッケルの拡散は、図1(a)に模式的に示すように、錫系めっき皮膜の粒界に沿って進行するため、拡散により生成した錫−ニッケル合金層(NiSn)は針状または柱状の形態となる。既知のニッケルと錫の二元状態図から、NiSnの具体例として、NiSn、NiSn、NiSnが挙げられる。 Nickel diffuses more easily in tin than in copper. Accordingly, during reflow or aging, nickel diffuses into the upper tin-based plating film, not the lower copper-based substrate. In this case, since the diffusion of nickel proceeds along the grain boundary of the tin-based plating film as schematically shown in FIG. 1 (a), the tin-nickel alloy layer (Ni x Sn y ) generated by the diffusion is used. Is in the form of needles or columns. From the known binary phase diagram of nickel and tin, Ni 3 Sn, Ni 3 Sn 2 and Ni 3 Sn 4 are given as specific examples of Ni x Sn y .

針状晶の一部が錫系めっき皮膜を貫通するようになると、めっき皮膜の耐食性が低下し、さらに表面凹凸が非常に大きくなって、接触抵抗も著しく増大する。また、嵌合型接続端子として使用した場合に嵌合ウィスカが発生し易くなるのは、上記針状晶が錫系めっき皮膜より硬く、めっき皮膜の見かけ硬度が高くなることが関係していると考えられる。   When a part of the needle crystal penetrates the tin-based plating film, the corrosion resistance of the plating film is lowered, the surface unevenness becomes very large, and the contact resistance is remarkably increased. In addition, when used as a fitting-type connection terminal, fitting whiskers are likely to occur because the acicular crystals are harder than the tin plating film and the apparent hardness of the plating film is high. Conceivable.

これに対し、本発明では、図2に示すように、導電性基体の表面に下地ニッケルめっき層を形成し、その上にさらにフラッシュ銅めっきを施して極薄の銅めっき層を形成してから、その上に錫系めっき皮膜を形成する。この3層のめっき層を有する基体は、リフロー(熱処理)または経時変化により、ニッケルめっき層がその上のフラッシュ銅めっき層と合金化する。それにより、フラッシュ銅めっき層は消失して、ニッケルめっき層と錫系めっき皮膜との間に、フラッシュ銅めっき層より厚みの大きな銅−ニッケル合金層が生成する。   On the other hand, in the present invention, as shown in FIG. 2, a base nickel plating layer is formed on the surface of the conductive substrate, and flash copper plating is further formed thereon to form an extremely thin copper plating layer. Then, a tin-based plating film is formed thereon. In the substrate having the three plating layers, the nickel plating layer is alloyed with the flash copper plating layer thereon by reflow (heat treatment) or aging. Thereby, the flash copper plating layer disappears, and a copper-nickel alloy layer having a thickness larger than that of the flash copper plating layer is generated between the nickel plating layer and the tin-based plating film.

その際に、ニッケルはその下側に存在する基体の銅ともいくらか合金化する可能性はあるが、上層のフラッシュ銅めっき層の方と優先的に合金化する。その理由は次のように推測される。   In doing so, nickel may preferentially alloy with the upper flash copper plating layer, although there is some possibility of alloying with the underlying copper of the base. The reason is presumed as follows.

ニッケルめっき層上に析出したフラッシュ銅めっき層は、水酸化銅[Cu(OH)またはCuOH]を形成し、安定状態にはないため、ニッケルに吸着した状態となる。水酸化銅により吸着されたニッケルは、拡散に必要な活性度が得られず、錫系めっき皮膜に対して拡散せず、針状晶の金属間化合物が成長できない。一方、ニッケル上に吸着された水酸化銅は不安定なため、熱処理や経時中にエネルギーを獲得すると、銅がニッケルと合金化して安定化しようとする。銅めっき層がフラッシュめっきではなく、通常の厚みの銅めっき層であると、銅が自己安定化して基体と同様の単なる金属銅として挙動するため、ニッケルに吸着することはなく、ニッケルの拡散が容易となる。つまり、銅めっき層が上記厚みのフラッシュ銅めっき層である場合だけに、ニッケルが上層の銅と優先的に合金化するのである。 The flash copper plating layer deposited on the nickel plating layer forms copper hydroxide [Cu (OH) 2 or CuOH] and is not in a stable state, and thus is adsorbed to nickel. Nickel adsorbed by copper hydroxide does not have the activity required for diffusion, does not diffuse into the tin-based plating film, and cannot grow acicular intermetallic compounds. On the other hand, since copper hydroxide adsorbed on nickel is unstable, when energy is acquired during heat treatment or aging, copper is alloyed with nickel to stabilize. If the copper plating layer is not a flash plating but a normal thickness copper plating, the copper will self-stabilize and behave as a mere metallic copper similar to the base, so it will not adsorb to the nickel and the nickel will not diffuse. It becomes easy. That is, nickel is preferentially alloyed with the upper copper layer only when the copper plating layer is a flash copper plating layer having the above thickness.

ニッケルと銅は、図4に示す二元状態図からもわかるように、全ての組成範囲において完全に安定した固溶体を形成する。従って、フラッシュ銅めっき層とニッケル層との合金化により生成した銅−ニッケル合金層は、銅−ニッケル固溶体からなると推測される。固溶体とは結晶レベルでお互いの金属が完全に混ざり合い、1つの金属のようになっている状態である。   As can be seen from the binary phase diagram shown in FIG. 4, nickel and copper form a completely stable solid solution in the entire composition range. Therefore, it is estimated that the copper-nickel alloy layer produced | generated by alloying with a flash copper plating layer and a nickel layer consists of a copper-nickel solid solution. The solid solution is a state in which the metals are completely mixed at the crystal level and are like one metal.

従って、本発明では、錫系めっき皮膜の下側に生成する銅−ニッケル合金層は、金属と同様に挙動する固溶体からなると考えられ、前述した錫−ニッケル合金層のような針状晶の形態はとらない。この点は、本発明の錫系めっき付き材料の皮膜構造を示す図3(b)の断面顕微鏡写真からも明らかである。この写真に見られるように、錫−ニッケル合金層は、下地のニッケルめっき層と表面の錫系めっき皮膜との間に薄く広がった層状の形態で存在し、図3(a)のような針状晶は見られない。   Therefore, in the present invention, it is considered that the copper-nickel alloy layer formed on the lower side of the tin-based plating film is made of a solid solution that behaves in the same manner as a metal, and has a needle-like crystal form like the tin-nickel alloy layer described above. Don't take it. This point is also apparent from the cross-sectional micrograph of FIG. 3 (b) showing the film structure of the tin-based plated material of the present invention. As seen in this photograph, the tin-nickel alloy layer exists in a layered form that spreads thinly between the underlying nickel plating layer and the tin-based plating film on the surface, as shown in FIG. No crystallites are seen.

図3(a)の従来の皮膜構造では、錫系めっき皮膜中に侵入するように多数の針状晶が成長し、錫系めっき皮膜が変質するため、前述したように、耐食性や接触抵抗の劣化、嵌合ウィスカの発生、といった種々の問題を生ずる。一方、図3(b)の本発明の皮膜構造では、錫系めっき皮膜は健全なまま保持されるので、耐食性や接触抵抗の劣化は起こらない。   In the conventional film structure of FIG. 3 (a), many needle crystals grow so as to penetrate into the tin-based plating film, and the tin-based plating film is altered. Various problems such as deterioration and generation of fitting whiskers occur. On the other hand, in the film structure of the present invention shown in FIG. 3 (b), the tin-based plating film is maintained in a healthy state, so that the corrosion resistance and the contact resistance are not deteriorated.

また、錫系めっき層と導電性基体との間に銅−ニッケル合金層が存在すると、嵌合型接続端子の挿入時に嵌合ウィスカの発生が防止される。その理由としては、この銅−ニッケル合金層が固溶体であって、金属と同様に柔らかく靱性が高いため、嵌合型接続端子の挿入時の圧力による応力を吸収しやすく、嵌合ウィスカ発生の原因となる歪みが抑制されることと、この銅−ニッケル合金層がニッケルの拡散による錫−ニッケル合金(針状晶)の生成を防止するバリア層として機能して、嵌合ウィスカの発生につながる針状晶の生成を防止できることから、嵌合ウィスカの発生が効果的に防止されるのではないかと考えられる。   In addition, when a copper-nickel alloy layer is present between the tin-based plating layer and the conductive base, generation of fitting whiskers is prevented when the fitting-type connection terminal is inserted. The reason for this is that this copper-nickel alloy layer is a solid solution and is soft and tough like metal, so it easily absorbs stress due to the pressure at the time of insertion of the mating connection terminal, causing the occurrence of mating whiskers. And the copper-nickel alloy layer functions as a barrier layer that prevents the formation of a tin-nickel alloy (needle-like crystal) due to the diffusion of nickel and leads to the generation of fitting whiskers. It is considered that the generation of fitting whiskers can be effectively prevented because the generation of crystallites can be prevented.

銅−ニッケル合金は、キュプロニッケル(白銅)として広く流通しており、また抵抗材料コンスタンタンとしても流通しているため、電気特性は詳しく調べられている。従って、本発明においてバリア層として機能する銅−ニッケル合金は特性の把握が容易である。   Since the copper-nickel alloy is widely distributed as cupronickel (white copper) and also as a resistance material constantan, electrical characteristics have been examined in detail. Therefore, it is easy to grasp the characteristics of the copper-nickel alloy functioning as a barrier layer in the present invention.

フラッシュ銅めっき層は非常に薄いため、フラッシュ銅めっき層が完全に銅−ニッケル合金層に変化しても、その下層にニッケル層が残る。このニッケル層により、導電性基体が例えば亜鉛のような合金元素を含有していても、基体から錫系めっき皮膜への亜鉛の拡散を防止することができる。   Since the flash copper plating layer is very thin, even if the flash copper plating layer is completely changed to a copper-nickel alloy layer, the nickel layer remains in the lower layer. This nickel layer can prevent the diffusion of zinc from the substrate to the tin-based plating film even when the conductive substrate contains an alloy element such as zinc.

本発明によれば、錫系めっき皮膜を健全に保持したまま、嵌合型接続端子の挿入時の嵌合ウィスカの発生を防止することができる。最上層の錫系めっき皮膜は、針状晶の生成といった変質を受けないため、耐食性の低下が起こらず、錫系めっき皮膜固有の良好な耐食性が保持される。また、金属間化合物が錫系めっき皮膜の表面に露出すると、表面凹凸が増大して、材料の接触抵抗が著しく増大するが、そのような接触抵抗の増大も避けることができる。   ADVANTAGE OF THE INVENTION According to this invention, generation | occurrence | production of the fitting whisker at the time of insertion of a fitting type | mold connection terminal can be prevented, maintaining a tin-type plating film healthy. Since the uppermost tin-based plating film does not undergo alteration such as the formation of acicular crystals, the corrosion resistance does not deteriorate, and the good corrosion resistance inherent to the tin-based plating film is maintained. Further, when the intermetallic compound is exposed on the surface of the tin-based plating film, the surface unevenness increases and the contact resistance of the material increases remarkably, but such an increase in contact resistance can also be avoided.

本発明の嵌合型接続端子に適した錫系めっき付き電子材料とその製造方法について、より具体的に説明する。但し、以下の説明は例示にすぎず、本発明を制限するものでない。
本発明において、導電性基体は、導電性が十分であれば、その組成は特に制限されない。嵌合型接続端子の場合、一般に基体は銅または銅合金である。銅合金の代表例としては、黄銅のような銅−亜鉛合金が例示される。より広義には、亜鉛、ニッケル、ケイ素、マグネシウム、クロム、鉄、錫、リンおよびジルコニウムから選ばれた1種または2種以上の合金元素を含有する銅合金でよい。導電性基体は全体が銅または銅合金からなるものでも、例えば、フレキシブル基板のように、表面だけが銅または銅合金からなるものでもよい。
The tin-plated electronic material suitable for the fitting-type connection terminal of the present invention and the manufacturing method thereof will be described more specifically. However, the following description is only an example and does not limit the present invention.
In the present invention, the composition of the conductive substrate is not particularly limited as long as the conductivity is sufficient. In the case of a fitting type connection terminal, the base is generally copper or a copper alloy. A typical example of the copper alloy is a copper-zinc alloy such as brass. More broadly, it may be a copper alloy containing one or more alloy elements selected from zinc, nickel, silicon, magnesium, chromium, iron, tin, phosphorus and zirconium. The entire conductive substrate may be made of copper or a copper alloy, or may be made of only the surface of copper or a copper alloy, such as a flexible substrate.

基体は、予め嵌合型接続端子の形状に加工したものでもよい。一般に嵌合型接続端子は雄型と雌型の端子からなる。例えば、図5に示すように、雄型端子はフレキシブル基板のような基板からなり、雌型端子はコネクタの内部に形成することができる。雄型端子は、基板以外にも、例えば、コネクタ、リードフレームとすることもできる。雌型端子も他の形態をとりうるが、典型的にはコネクタの内部に形成される。   The substrate may be processed into the shape of the fitting type connection terminal in advance. In general, the fitting type connection terminal is composed of a male type and a female type terminal. For example, as shown in FIG. 5, the male terminal is formed of a substrate such as a flexible substrate, and the female terminal can be formed inside the connector. In addition to the substrate, the male terminal can be, for example, a connector or a lead frame. The female terminal may take other forms, but is typically formed inside the connector.

基体の上に、下地ニッケルめっきを施してニッケルめっき層を形成する。ニッケルめっき層の厚みは0.1〜4μmの範囲が好ましい。従って、このような膜厚のめっき皮膜が一度に形成できる電気めっきによりニッケルめっき層を形成することが好ましい。電気めっき浴は、公知のワット浴、塩化浴、スルファミン酸ニッケル浴などのいずれも使用できるが、好ましいのはスルファミン酸ニッケル浴である。ニッケルめっき層の厚みは、その上に形成されるフラッシュ銅めっき層の厚みの2倍以上とすることが好ましく、より好ましくは5倍以上とする。   On the substrate, a nickel plating layer is formed by applying a base nickel plating. The thickness of the nickel plating layer is preferably in the range of 0.1 to 4 μm. Therefore, it is preferable to form the nickel plating layer by electroplating capable of forming a plating film having such a thickness at a time. As the electroplating bath, any of a known Watt bath, chloride bath, nickel sulfamate bath and the like can be used, but a nickel sulfamate bath is preferred. The thickness of the nickel plating layer is preferably at least twice the thickness of the flash copper plating layer formed thereon, more preferably at least five times.

次いで、フラッシュ銅めっき(短時間の電気めっき)を行って、ニッケルめっき層の上に薄い銅めっき層を形成する。このフラッシュ銅めっき層の膜厚は0.05〜0.5μmである。フラッシュ銅めっき層が0.05μmより薄いか、0.5μmより厚いと、嵌合ウィスカの抑制効果が十分に得られない。銅めっき浴も特に制限されないが、好ましいのは硫酸銅めっき浴である。   Next, flash copper plating (short-time electroplating) is performed to form a thin copper plating layer on the nickel plating layer. The flash copper plating layer has a thickness of 0.05 to 0.5 μm. If the flash copper plating layer is thinner than 0.05 μm or thicker than 0.5 μm, the effect of suppressing the fitting whisker cannot be sufficiently obtained. The copper plating bath is not particularly limited, but a copper sulfate plating bath is preferable.

その後、錫もしくは錫合金めっきを施して、フラッシュ銅めっき層の上に錫もしくは錫合金めっきからなる錫系めっき層を形成する。この錫系めっき層の膜厚は0.5〜15μmの範囲が好ましい。錫系めっきも一般に電気めっきにより行われ、めっき浴としては、例えばホウフッ酸塩浴、有機酸塩浴などが使用されるが、それに制限されるものではない。錫系めっきは、光沢剤を含有させた光沢めっきとすることもできる。   Thereafter, tin or tin alloy plating is performed to form a tin-based plating layer made of tin or tin alloy plating on the flash copper plating layer. The thickness of the tin-based plating layer is preferably in the range of 0.5 to 15 μm. Tin-based plating is also generally performed by electroplating, and as the plating bath, for example, a borofluoride bath, an organic acid salt bath, or the like is used, but it is not limited thereto. The tin-based plating can also be a bright plating containing a brightening agent.

錫系めっきが錫合金めっきである場合、錫合金の例としては、錫と、銅、ビスマス、銀、亜鉛、インジウムから選ばれた1種または2種以上との合金が挙げられる。好ましい錫系めっきは、錫−銅合金である。錫−銅合金のめっき皮膜は、錫めっき皮膜よりやや硬いため、嵌合型接続端子の挿入力が少なくてすむ。但し、錫系めっき皮膜が純錫または錫と銅以外の金属との合金であっても、本発明の嵌合ウィスカ抑制効果は同様に得られる。   In the case where the tin plating is tin alloy plating, examples of the tin alloy include an alloy of tin and one or more selected from copper, bismuth, silver, zinc, and indium. A preferred tin-based plating is a tin-copper alloy. Since the tin-copper alloy plating film is slightly harder than the tin plating film, the insertion force of the fitting type connection terminal can be reduced. However, even if the tin-based plating film is pure tin or an alloy of metal other than tin and copper, the fitting whisker suppressing effect of the present invention can be obtained similarly.

基体が予め嵌合型接続端子の形状に加工されている場合、基体の形状が非常に小さい場合には、上記の各電気めっきをバレルめっきにより行うこともできる。その場合には、バレルめっきに適しためっき浴を選択することができる。   When the base is processed into the shape of the fitting type connection terminal in advance, when the shape of the base is very small, the above-described electroplating can be performed by barrel plating. In that case, a plating bath suitable for barrel plating can be selected.

こうして、導電性基体の上に下地ニッケルめっき層、薄いフラッシュ銅めっき層、錫系めっき層を有する本発明に係る錫系めっき付き電子材料が得られる。このフラッシュ銅めっき層を有する錫系めっき付き電子材料は、そのままリフローせずに、嵌合型接続端子その他の用途に使用することもできる。その場合でも、前述したように、経時変化によってフラッシュ銅めっき層が下地のニッケル層と合金化し、銅−ニッケル合金層に変化し、上記の嵌合ウィスカ発生防止効果を得ることができる。   In this way, the electronic material with tin plating according to the present invention having the base nickel plating layer, the thin flash copper plating layer, and the tin plating layer on the conductive substrate is obtained. The electronic material with tin plating having the flash copper plating layer can be used for fitting connection terminals and other applications without reflowing as it is. Even in such a case, as described above, the flash copper plating layer is alloyed with the underlying nickel layer due to a change with time, and is changed to a copper-nickel alloy layer, so that the above-described effect of preventing fitting whiskers can be obtained.

リフローしない場合には、錫系めっき皮膜の経時ウィスカの発生を防止するために、リフロー以外の他の経時ウィスカ抑制手段(例、錫系めっき浴の光沢剤の変更)を採用してもよい。   When reflow is not performed, in order to prevent the occurrence of whisker over time of the tin-based plating film, other means for suppressing whisker over time other than reflow (eg, changing the brightener of the tin-based plating bath) may be employed.

経時ウィスカの発生を防止するために、好ましくは、錫系めっき皮膜を形成した後に、リフロー(熱処理)を行って、錫系めっき層の歪みを解放する。このリフローにより同時に、フラッシュ銅めっき層が下地のニッケルめっき層と合金化して、銅−ニッケル合金層が生成し、こうして嵌合ウィスカの発生も防止することができる。但し、銅めっき層はニッケル層に比べて非常に薄いので、銅が完全にニッケルと合金化しても、ニッケル層の大半は合金化せずに残り、その上に銅−ニッケル合金層が存在する。この銅−ニッケル合金層は、上述したように、状態図から見て、金属と同じ性質を示す固溶体であると考えられ、拡散防止層として機能すると同時に、嵌合ウィスカの発生を防止する。   In order to prevent the occurrence of aging whiskers, preferably, after the tin-based plating film is formed, reflow (heat treatment) is performed to release the distortion of the tin-based plating layer. Simultaneously with this reflow, the flash copper plating layer is alloyed with the underlying nickel plating layer to form a copper-nickel alloy layer, thus preventing the occurrence of fitting whiskers. However, since the copper plating layer is very thin compared to the nickel layer, even if copper is completely alloyed with nickel, most of the nickel layer remains unalloyed, and there is a copper-nickel alloy layer on it. . As described above, this copper-nickel alloy layer is considered to be a solid solution having the same properties as metal as seen from the phase diagram, and functions as a diffusion prevention layer and at the same time prevents the occurrence of fitting whiskers.

熱処理条件は、フラッシュめっきにより形成された薄い銅めっき層が完全にニッケルと合金化するように選択することが好ましく、210℃以上とすることが本発明の目的に特に有効である。温度の上限は特に制限されないが、コストを考慮すると、310℃以下とすることが有利である。好ましい熱処理温度は210〜265℃の範囲である。熱処理時間は通常は100〜500秒間の範囲内で十分であろう。好ましい熱処理時間は200〜300秒である。   The heat treatment conditions are preferably selected so that a thin copper plating layer formed by flash plating is completely alloyed with nickel, and it is particularly effective for the purpose of the present invention to be 210 ° C. or higher. The upper limit of the temperature is not particularly limited, but considering the cost, it is advantageous to set it to 310 ° C. or lower. A preferable heat treatment temperature is in the range of 210 to 265 ° C. The heat treatment time will usually be sufficient in the range of 100 to 500 seconds. A preferable heat treatment time is 200 to 300 seconds.

こうして、導電性基体の上に、好ましくはニッケル層を介して、銅−ニッケル合金層が存在し、その上に錫もしくは錫合金からなる錫系めっき皮膜を有する錫系めっき付き電子材料が製造される。銅−ニッケル合金層が錫系めっき皮膜へのニッケルの拡散を防止するバリア層として機能するため、錫系めっき皮膜は健全に保たれ、このめっき皮膜は針状ないし柱状のニッケル−錫金属間化合物を実質的に含有していない。   Thus, a tin-plated electronic material having a copper-nickel alloy layer on a conductive substrate, preferably via a nickel layer, and having a tin-based plating film made of tin or a tin alloy thereon is produced. The Since the copper-nickel alloy layer functions as a barrier layer for preventing the diffusion of nickel into the tin-based plating film, the tin-based plating film is kept healthy, and this plating film is a needle-like or columnar nickel-tin intermetallic compound. Is substantially not contained.

特許文献2には、基体上に下地ニッケルめっき層、銅めっき層および錫めっき皮膜を形成した後にリフローすると、リフロー中に銅めっき層の銅が錫系めっき層に拡散して、錫めっき層と銅めっき層との間に銅−錫金属間化合物からなる層が生成することが記載されている。   In Patent Document 2, when a reflow is performed after forming a base nickel plating layer, a copper plating layer, and a tin plating film on a base, copper in the copper plating layer diffuses into the tin-based plating layer during the reflow, It is described that a layer made of a copper-tin intermetallic compound is formed between the copper plating layer.

本発明では、銅めっき層が上側の錫系めっき皮膜ではなく、下側のニッケルめっき層との相互拡散により銅−ニッケル合金層を生成する。その理由は、前述したように、銅めっき層が極薄のフラッシュ銅めっき層であって、ニッケル上に不安定な状態で吸着されているため、ニッケルとの間で合金化するものと考えられる。   In the present invention, the copper plating layer is not an upper tin-based plating film, but a copper-nickel alloy layer is generated by mutual diffusion with the lower nickel plating layer. The reason is that, as described above, the copper plating layer is an ultra-thin flash copper plating layer that is adsorbed in an unstable state on nickel, and is therefore considered to be alloyed with nickel. .

(実施例1)
厚み0.2mmの銅板(20×50mm)からなる基体に、電気めっきにより、下地ニッケルめっき層(厚み1μm、スルファミン酸塩浴)、フラッシュ銅めっき層(厚み0.1μm、硫酸塩浴)、錫−銅合金めっき層(厚み3μm、銅含有量1.5質量%、有機酸塩浴)を順に形成した。その後、この基体を250℃のオーブンに入れて250秒間の熱処理を行った。
(Example 1)
A base consisting of a copper plate (20 × 50 mm) having a thickness of 0.2 mm is electroplated to form a base nickel plating layer (thickness 1 μm, sulfamate bath), a flash copper plating layer (thickness 0.1 μm, sulfate bath), tin -A copper alloy plating layer (thickness 3 µm, copper content 1.5 mass%, organic acid salt bath) was formed in order. Thereafter, this substrate was put in an oven at 250 ° C. and heat-treated for 250 seconds.

こうして基体上に形成されためっき層の断面顕微鏡写真を図3(b)に示す。この写真からわかるように、基板上のめっき皮膜は、下からニッケル層、銅−ニッケル合金層、および錫−銅合金めっき層の3層が順に積層した構造を有し、針状晶は見られなかった。表面の錫−銅合金めっき層は、緻密で健全な状態を保持していた。   A cross-sectional photomicrograph of the plating layer thus formed on the substrate is shown in FIG. As can be seen from this photograph, the plating film on the substrate has a structure in which a nickel layer, a copper-nickel alloy layer, and a tin-copper alloy plating layer are laminated in order from the bottom, and acicular crystals are seen. There wasn't. The surface tin-copper alloy plating layer maintained a dense and healthy state.

(比較例1)
比較のために、フラッシュ銅めっき層を形成しなかった以外は実施例1と全く同様にして、基体の上に下地ニッケルめっきと錫−銅合金めっき層を形成し、熱処理を行った。こうして基体上に形成されためっき層の断面顕微鏡写真を図3(a)に示す。この写真からわかるように、基体の上には多数の針状晶(錫−ニッケル金属間化合物<NiSn>からなると推定される)が錫−銅合金めっき層の中に突き出て成長していた。この結晶の一部は、表面の錫−銅合金めっき層を完全に貫通して、めっき表面に現れていた。
(Comparative Example 1)
For comparison, a base nickel plating layer and a tin-copper alloy plating layer were formed on the substrate in the same manner as in Example 1 except that the flash copper plating layer was not formed, and heat treatment was performed. A cross-sectional photomicrograph of the plating layer thus formed on the substrate is shown in FIG. As can be seen from this photograph, a large number of needle-like crystals (estimated to be composed of a tin-nickel intermetallic compound <Ni x Sn y >) grow on the substrate and protrude into the tin-copper alloy plating layer. It was. A part of this crystal completely penetrated the surface tin-copper alloy plating layer and appeared on the plating surface.

実施例1および比較例1で製造した錫系めっき付き電子材料のめっき表面のビッカース硬度(Hv)を調べた結果、実施例1ではHv16.88であったのに対し、比較例1ではHv34.54と、硬度が2倍以上に高くなった。比較例1では、錫系めっき皮膜中に侵入するように金属間化合物からなる針状晶が析出しているため、錫系めっき皮膜の下が固溶体からなる銅−ニッケル合金層になっている実施例1に比べて、めっき皮膜の見かけ硬度が高くなったと考えられる。   As a result of examining the Vickers hardness (Hv) of the plating surface of the electronic material with tin plating manufactured in Example 1 and Comparative Example 1, it was Hv 16.88 in Example 1, whereas Hv 34. 54, the hardness was more than doubled. In Comparative Example 1, since needle-like crystals made of an intermetallic compound are deposited so as to penetrate into the tin-based plating film, the lower part of the tin-based plating film is a copper-nickel alloy layer made of a solid solution. Compared to Example 1, it is considered that the apparent hardness of the plating film was increased.

さらに、実施例1および比較例1の錫系めっき付き電子材料について、先端径が1mmのステンレス鋼(SUS316)製プローブをめっき表面に垂直に当てて300gWの力で上から500時間押圧することにより嵌合ウィスカの発生状況を調べた。その結果を示す写真を図6(a)(比較例1)、図6(b)(実施例1)に示す。   Further, with respect to the electronic material with tin plating of Example 1 and Comparative Example 1, a probe made of stainless steel (SUS316) having a tip diameter of 1 mm was vertically applied to the plating surface and pressed from above with a force of 300 gW for 500 hours. The occurrence of mating whiskers was examined. Photographs showing the results are shown in FIG. 6 (a) (Comparative Example 1) and FIG. 6 (b) (Example 1).

図6(a)に示す比較例1の場合には嵌合ウイスカが著しく発生したのに対し、図6(b)に示す実施例1の場合には嵌合ウイスカが全く発生しなかった。
(比較例2)
フラッシュ銅めっき層の厚みを1μmと厚くした点を除いて、実施例1と全く同様にして3種類のめっき(ニッケルめっき、銅めっき、および錫−銅合金めっき)とリフローを行い、錫系めっき付き電子材料を製造した。
In the case of Comparative Example 1 shown in FIG. 6A, fitting whiskers were remarkably generated, whereas in the case of Example 1 shown in FIG. 6B, no fitting whiskers were generated.
(Comparative Example 2)
Except for the point that the thickness of the flash copper plating layer was increased to 1 μm, three types of plating (nickel plating, copper plating, and tin-copper alloy plating) and reflow were performed in the same manner as in Example 1, and tin-based plating was performed. The attached electronic material was manufactured.

この電子材料の断面を顕微鏡で観察して皮膜構造を調べたところ、図3(c)に示すように、錫−銅合金めっき皮膜中に多数の針状晶が見られた。即ち、ニッケル層と錫系めっき皮膜との間に介在させる銅めっきの厚みが0.5μmより厚くなると、銅−ニッケル合金層によるバリア効果を満足に得ることができず、NiSnの成長が再び起こるようになる。但し、図2(a)のように針状晶が錫−銅合金めっき皮膜を貫通するほどまでには成長していなかった。 When the cross-section of this electronic material was observed with a microscope to examine the film structure, a large number of needle-like crystals were observed in the tin-copper alloy plating film as shown in FIG. That is, when the thickness of the copper plating interposed between the nickel layer and the tin-based plating film is greater than 0.5 μm, the barrier effect due to the copper-nickel alloy layer cannot be obtained satisfactorily, and Ni x Sn y grows. Will happen again. However, as shown in FIG. 2 (a), the acicular crystals did not grow to the extent that they penetrate the tin-copper alloy plating film.

この電子材料について嵌合ウィスカの発生試験を上記と同様に行ったところ、明らかに嵌合ウィスカの発生が確認された。   When this electronic material was subjected to a fitting whisker generation test in the same manner as described above, the generation of fitting whiskers was clearly confirmed.

銅基体上に下地ニッケルめっきおよび錫系めっき(図中では錫−銅合金めっき)を形成した従来技術におけるめっき直後とリフローによる拡散後の状況を模式的に示す説明図である。It is explanatory drawing which shows typically the condition after the spreading | diffusion by the reflow after the plating in the prior art which formed base nickel plating and tin-type plating (in the figure, tin-copper alloy plating) on the copper base | substrate. 本発明に従って銅基体上下地ニッケルめっき、フラッシュ銅めっき、および錫系めっき(図中では錫−銅合金めっき)を形成した場合のめっき直後とリフローによる拡散後の状況を模式的に示す説明図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view schematically showing the situation immediately after plating and after diffusion by reflow when a base nickel plating, flash copper plating, and tin-based plating (tin-copper alloy plating in the figure) are formed according to the present invention. is there. 図3はリフロー後の皮膜構造を示す断面顕微鏡写真(×4000)であり、図3(a)は図1と同様の従来技術の場合、図3(b)は図2と同様の本発明の場合、図3(c)は、銅めっきが厚すぎた比較例の場合をそれぞれ示す。FIG. 3 is a cross-sectional photomicrograph (× 4000) showing the film structure after reflow. FIG. 3 (a) shows the conventional technique similar to FIG. 1, and FIG. 3 (b) shows the present invention similar to FIG. In this case, FIG. 3 (c) shows a comparative example in which the copper plating is too thick. ニッケル−銅二元系状態図を示す。A nickel-copper binary system phase diagram is shown. 嵌合型接続端子の構造の1例と嵌合ウィスカの発生位置を模式的に示す説明図である。It is explanatory drawing which shows typically an example of the structure of a fitting type connection terminal, and the generation | occurrence | production position of a fitting whisker. 嵌合型接続端子として使用した場合の端子挿入後の嵌合ウイスカの発生状況を示す図であり、図6(a)は従来技術の場合、図6(b)は本発明の場合をそれぞれ示す。It is a figure which shows the generation | occurrence | production state of the fitting whisker after the terminal insertion at the time of using as a fitting type connection terminal, FIG. 6 (a) shows the case of a prior art, FIG.6 (b) shows the case of this invention, respectively. .

Claims (7)

導電性基体の表面に、下地ニッケル層と銅−ニッケル合金からなるバリア層とを介して錫もしくは錫合金めっき皮膜を有する、嵌合ウィスカ発生が抑制された錫系めっき付き電子材料。   An electronic material with tin-based plating in which the generation of fitting whiskers is suppressed, which has a tin or tin alloy plating film on the surface of a conductive substrate via a base nickel layer and a barrier layer made of a copper-nickel alloy. 前記錫もしくは錫合金めっき皮膜が、針状もしくは柱状の結晶を実質的に含有していない、請求項1に記載の錫系めっき付き電子材料。   The electronic material with tin-based plating according to claim 1, wherein the tin or tin alloy plating film does not substantially contain needle-like or columnar crystals. 導電性基体の表面に、下地ニッケルめっき層、厚み0.05〜0.5μmのフラッシュ銅めっき層、ならびに錫もしくは錫合金めっき皮膜をこの順に有する、嵌合ウィスカ発生が抑制された錫めっき付き電子材料。   Electron with tin plating on which the surface of the conductive substrate has a base nickel plating layer, a flash copper plating layer having a thickness of 0.05 to 0.5 μm, and a tin or tin alloy plating film in this order, and generation of fitting whiskers is suppressed. material. 前記導電性基体が銅または銅合金からなる、請求項1〜3のいずれかに記載の錫系めっき付き電子材料。   The electronic material with tin plating according to any one of claims 1 to 3, wherein the conductive substrate is made of copper or a copper alloy. 請求項1〜4のいずれかに記載の錫系めっき付き電子材料からなる嵌合型接続端子。   The fitting type connection terminal which consists of an electronic material with a tin system plating in any one of Claims 1-4. 導電性基体に、下地のニッケルめっきと厚み0.05〜0.5μmのフラッシュ銅めっきとをこの順に施し、次いで錫もしくは錫合金めっきを行うことを特徴とする、嵌合ウィスカ発生が抑制された錫系めっき付き電子材料の製造方法。   The formation of fitting whiskers, characterized in that a conductive base is subjected to a base nickel plating and a flash copper plating with a thickness of 0.05 to 0.5 μm in this order, and then tin or tin alloy plating is suppressed. Manufacturing method of electronic material with tin plating. 錫もしくは錫合金めっきの後に210℃以上の温度で熱処理を行う、請求項6に記載の方法。
The method of Claim 6 which heat-processes at the temperature of 210 degreeC or more after tin or a tin alloy plating.
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