JP2006147907A - Method for manufacturing printed-wiring board - Google Patents

Method for manufacturing printed-wiring board Download PDF

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JP2006147907A
JP2006147907A JP2004337172A JP2004337172A JP2006147907A JP 2006147907 A JP2006147907 A JP 2006147907A JP 2004337172 A JP2004337172 A JP 2004337172A JP 2004337172 A JP2004337172 A JP 2004337172A JP 2006147907 A JP2006147907 A JP 2006147907A
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resist pattern
plating
metal layer
etching resist
bump
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JP2004337172A
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JP4509747B2 (en
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Junichi Ishibashi
純一 石橋
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Nippon CMK Corp
CMK Corp
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Nippon CMK Corp
CMK Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a printed-wiring board capable of forming a bump having a top diameter not remarkably thinned even when the bump at a high aspect ratio is formed by an etching. <P>SOLUTION: In the method for manufacturing the printed-wiring board, a process in which a plating is precipitated on the surface of a metallic layer having a thickness, the process in which an etching resist pattern is formed to at least the bump forming section of the plated surface, the process in which the plating exposed from the etching resist pattern is removed by the etching, and the process in which the etching resist pattern is peeled, are conducted in required numbers as one set. The method has the process in which the final etching resist pattern is formed, the process in which the metallic layer exposed from the final etching resist pattern is removed, and the process in which the final etching resist pattern is peeled. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はプリント配線板の製造方法に関し、特に、トップ径の細りを抑制した高アスペクト比のバンプを有するプリント配線板の製造方法に関する。   The present invention relates to a method for manufacturing a printed wiring board, and more particularly to a method for manufacturing a printed wiring board having high aspect ratio bumps with reduced top diameter reduction.

従来、半田ボールを外部接続端子とする電子部品実装用のプリント配線板の製造方法としては、図2に示したような方法が知られている(例えば、特許文献1)。   2. Description of the Related Art Conventionally, as a method for manufacturing a printed wiring board for mounting electronic components using solder balls as external connection terminals, a method as shown in FIG. 2 is known (for example, Patent Document 1).

この製造方法を説明すれば、まず、図2(a)に示したように、厚みのある、例えば80〜150μm程度の銅、あるいは銅合金等からなる第一金属層1と、当該第一金属層1と同じ材料からなる第二金属層2と、当該第一金属層1と第二金属層2の間に挟まれ、且つ両金属層1、2とはエッチング条件の異なるバリア金属層3とからなる三層構造の金属基板4を用意する。   Explaining this manufacturing method, first, as shown in FIG. 2A, the first metal layer 1 made of copper having a thickness, for example, about 80 to 150 μm, or a copper alloy, and the first metal A second metal layer 2 made of the same material as the layer 1, a barrier metal layer 3 sandwiched between the first metal layer 1 and the second metal layer 2 and having different etching conditions from the metal layers 1 and 2; A metal substrate 4 having a three-layer structure is prepared.

次に、図2(b)に示したように、フォトエッチングプロセスによって配線パターン5を形成した金属基板4に、層間接続用バンプ7の先端が絶縁層10から突出した回路形成用基板6を、当該配線パターン5と層間接続用バンプ7とを位置合わせして積層する(図2(c)参照)。   Next, as shown in FIG. 2B, the circuit forming substrate 6 in which the tip of the interlayer connection bump 7 protrudes from the insulating layer 10 is formed on the metal substrate 4 on which the wiring pattern 5 is formed by the photoetching process. The wiring pattern 5 and the interlayer connection bumps 7 are aligned and stacked (see FIG. 2C).

ここで、当該回路形成用基板6は、例えば、1〜20μm程度の銅、あるいは銅合金等の第四金属層8上に、0.1〜2.0μm程度のニッケル、あるいはニッケル合金等のバリア金属層9を介して図示しない第三金属層を積層したものを用意し、当該第三金属層を選択エッチングして層間接続用バンプ7を形成した後、当該層間接続用バンプ7から露出しているバリア金属層9をエッチング除去し、次いで、層間接続用バンプ7の先端が露出する厚さの絶縁層10をバンプ7の形成面に積層することによって得られる。   Here, the circuit forming substrate 6 has a barrier of nickel or nickel alloy of about 0.1 to 2.0 μm on the fourth metal layer 8 of copper or copper alloy of about 1 to 20 μm, for example. A layer in which a third metal layer (not shown) is laminated through a metal layer 9 is prepared, and the third metal layer is selectively etched to form an interlayer connection bump 7, and then exposed from the interlayer connection bump 7. Then, the barrier metal layer 9 is removed by etching, and then an insulating layer 10 having a thickness exposing the tip of the interlayer connection bump 7 is laminated on the formation surface of the bump 7.

次に、第四金属層8にフォトエッチングを行なうことによって、外層の配線パターン5を形成した後、所望の部位に開口部12が形成された絶縁膜11を形成し、次いで、当該絶縁膜11から露出している外層の配線パターン5の表面に、図示しないニッケルめっき、及び金めっきを施す(図2(d)参照)。   Next, by performing photoetching on the fourth metal layer 8 to form the outer layer wiring pattern 5, an insulating film 11 having an opening 12 formed at a desired portion is formed, and then the insulating film 11 is formed. The surface of the outer layer wiring pattern 5 exposed from (1) is subjected to nickel plating and gold plating (not shown) (see FIG. 2D).

次に、第一金属層1にフォトエッチングを行なうことによって、外部接続端子用バンプ13、及び補強部14を形成した後、表面に露出しているバリア金属層3をエッチング除去することによって、図2(e)に示したプリント配線板Paを得るものである。   Next, by performing photoetching on the first metal layer 1 to form the external connection terminal bumps 13 and the reinforcing portion 14, the barrier metal layer 3 exposed on the surface is removed by etching. The printed wiring board Pa shown in 2 (e) is obtained.

このようにして得られたプリント配線板Paは、半田ボールによる外部接続端子形成部に高アスペクト比の外部接続端子用バンプ13を設けた構成としたため、半田ボールの変形による接続不良を防止でき、また、図示しない半導体素子を搭載した当該プリント配線板Paを三次元的に複数積層する際の加圧に対する強度も確保できるため、下側に位置する半導体素子等へのダメージを回避できるというものである。   Since the printed wiring board Pa thus obtained has a configuration in which the external connection terminal bumps 13 having a high aspect ratio are provided in the external connection terminal formation portion by the solder balls, connection failure due to deformation of the solder balls can be prevented, In addition, since the strength against pressurization when three-dimensionally stacking the printed wiring boards Pa on which the semiconductor elements (not shown) are mounted can be secured, damage to the semiconductor elements and the like located below can be avoided. is there.

しかし、上記プリント配線板Paの製造工程においては、外部接続端子用バンプ13の形成を、一回のエッチング処理にて形成するようにしているため、サイドエッチングが大きくなり、その結果、当該外部接続端子用バンプ13のトップ径が著しく細くなってしまい、上記作用が確実に得られないという問題を有していた。
特開2002−43506号公報
However, in the manufacturing process of the printed wiring board Pa, since the external connection terminal bumps 13 are formed by a single etching process, the side etching becomes large, and as a result, the external connection The top diameter of the terminal bump 13 becomes extremely thin, and there is a problem that the above action cannot be obtained with certainty.
JP 2002-43506 A

本発明は、上記不具合を解消するためになされたもので、エッチングにより高アスペクト比のバンプを形成した場合においても、トップ径が著しく細くなることのないバンプを形成することができるプリント配線板の製造方法を提供することを課題とする。   The present invention has been made to solve the above problems, and even when a high aspect ratio bump is formed by etching, a printed wiring board capable of forming a bump whose top diameter is not significantly reduced. It is an object to provide a manufacturing method.

請求項1に係る本発明は、厚みのある金属層にエッチングを行なうことによって、高アスペクト比のバンプを形成するようにしたプリント配線板の製造方法であって、当該厚みのある金属層の表面にめっきを析出させる工程と、当該めっき表面の少なくともバンプ形成部にエッチングレジストパターンを形成する工程と、エッチングにより当該エッチングレジストパターンから露出しているめっきを除去する工程と、当該エッチングレジストパターンを剥離する工程とを1セットとして必要回数行ない、次いで、最終のエッチングレジストパターンを形成する工程と、当該最終のエッチングレジストパターンから露出している金属層を除去する工程と、当該最終のエッチングレジストパターンを剥離することによってバンプを得る工程とを含んでなるプリント配線板の製造方法により、上記課題を解決したものである。   The present invention according to claim 1 is a method of manufacturing a printed wiring board in which a bump having a high aspect ratio is formed by etching a thick metal layer, the surface of the thick metal layer A step of depositing plating on the surface, a step of forming an etching resist pattern on at least a bump forming portion of the plating surface, a step of removing plating exposed from the etching resist pattern by etching, and peeling the etching resist pattern And the step of forming the final etching resist pattern, the step of removing the metal layer exposed from the final etching resist pattern, and the final etching resist pattern. A step of obtaining bumps by peeling. The method for manufacturing a printed wiring board formed in, which solves the above problems.

これにより、トップ径の細りを抑制した高アスペクト比のバンプを得ることができる。   Thereby, it is possible to obtain a bump having a high aspect ratio in which the top diameter is suppressed.

また、請求項2に係る本発明は、前記請求項1に記載のプリント配線板の製造方法において、当該めっきを、厚みのある金属層の表面とは反対の面の配線パターン形成面にも同時に形成し、当該配線パターン形成と同時にエッチング加工することを特徴とする。   The present invention according to claim 2 is the method for manufacturing a printed wiring board according to claim 1, wherein the plating is simultaneously performed on the wiring pattern forming surface opposite to the surface of the thick metal layer. It is formed and etched simultaneously with the formation of the wiring pattern.

これにより、バンプを形成しつつ、反対面に配線パターンを形成することができるため、効率よくプリント配線板を製造することができる。   Thereby, since a wiring pattern can be formed on the opposite surface while forming a bump, a printed wiring board can be manufactured efficiently.

トップ径の細りを抑制した高アスペクト比のバンプを有するプリント配線板を容易に得ることができる。   A printed wiring board having high aspect ratio bumps with reduced top diameter reduction can be easily obtained.

本発明の実施の形態を、図1を用いて説明する。尚、図2と共通する部位には同じ符号を付すようにした。また、本実施の形態においても、図2と同様に高アスペクト比の外部接続端子用バンプを有するプリント配線板の製造工程を用いて説明することとする。   An embodiment of the present invention will be described with reference to FIG. In addition, the same code | symbol was attached | subjected to the site | part which is common in FIG. Also in this embodiment, the description will be made using the manufacturing process of the printed wiring board having the bumps for external connection terminals having a high aspect ratio as in FIG.

まず、図1(a)に示したように、厚みのある銅、あるいは銅合金等からなる第一金属層1と、当該第一金属層1とはエッチング条件の異なるニッケル、あるいはニッケル合金等のバリア金属層3(例えば2〜5μm)とからなる金属基板4aを用意する。   First, as shown in FIG. 1 (a), the first metal layer 1 made of thick copper or copper alloy or the like, and the first metal layer 1 is made of nickel or nickel alloy or the like having different etching conditions. A metal substrate 4a composed of the barrier metal layer 3 (for example, 2 to 5 μm) is prepared.

ここで、第一金属層1としては、必要とするバンプ高さ分から各工程で付与されるめっき膜厚分を差し引いた厚みからなり、例えば、250〜300μm程度の厚さである。   Here, the first metal layer 1 has a thickness obtained by subtracting the plating film thickness provided in each step from the required bump height, and has a thickness of about 250 to 300 μm, for example.

次に、図1(b)に示したように、第一金属層1とバリア金属層3の表面に、当該第一金属層1と同じ金属からなる第一めっき15(例えば10〜30μm)を析出させた後、バンプ形成部を含む表裏の第一めっき15の表面にエッチングレジストパターン16を形成し、次いで、アルカリエッチャントを用いたエッチング処理により露出している第一めっき15を除去した後、当該エッチングレジストパターン16を剥離することによって、一方の面に配線パターン5が形成され、他方の面のバンプ形成部にバンプ形成用第一めっき15aが形成された図1(c)の基板を得る。   Next, as shown in FIG.1 (b), the 1st plating 15 (for example, 10-30 micrometers) which consists of the same metal as the said 1st metal layer 1 on the surface of the 1st metal layer 1 and the barrier metal layer 3 is carried out. After the deposition, an etching resist pattern 16 is formed on the front and back surfaces of the first plating 15 including the bump forming portions, and then the exposed first plating 15 is removed by an etching process using an alkali etchant. The etching resist pattern 16 is peeled off to obtain the substrate of FIG. 1C in which the wiring pattern 5 is formed on one surface and the bump forming first plating 15a is formed on the bump forming portion on the other surface. .

ここで、バンプ形成用第一めっき15aを形成する際のエッチング処理においては、第一めっき15が第一金属層1と同じ金属からなるため、配線パターン5を形成するエッチング条件(第一めっき15をエッチング除去する条件)にてエッチング処理をしたとしても、実際には図1(c)に示したように、エッチングレジストパターン16の非形成部に位置する当該第一金属層1も僅かにエッチングされる。   Here, since the first plating 15 is made of the same metal as the first metal layer 1 in the etching process when forming the bump forming first plating 15a, the etching conditions (first plating 15) for forming the wiring pattern 5 are used. 1), the first metal layer 1 located in the portion where the etching resist pattern 16 is not formed is slightly etched as shown in FIG. 1C. Is done.

次に、配線パターン5が形成された面に絶縁層10a、及び金属箔17を積層するか、あるいは両者を予め積層した樹脂付き金属箔を積層し、次いで、当該金属箔17の層から配線パターン5の表面に達する非貫通孔19を穿孔する(図1(d)参照)。   Next, the insulating layer 10a and the metal foil 17 are laminated on the surface on which the wiring pattern 5 is formed, or a resin-coated metal foil in which both are laminated in advance is laminated, and then the wiring pattern is formed from the metal foil 17 layer. 5 is drilled (see FIG. 1 (d)).

次に、デスミア処理を行なった後、めっき処理によって表裏に第二めっき18を析出させ、次いで、表裏の当該第二めっき18の表面にエッチングレジストパターン16を形成する(図1(e)参照)。   Next, after performing a desmear process, the 2nd plating 18 is deposited on the front and back by a plating process, and then the etching resist pattern 16 is formed on the surface of the second plating 18 on the front and back (see FIG. 1 (e)). .

次に、エッチング(塩化第二鉄液、塩化第二銅液等)により、エッチングレジストパターン16から露出している第二めっき18及び金属箔17を除去した後、当該エッチングレジストパターン16を剥離することによって、一方の面に配線パターン5(図中ではビアホールのランド部を指している)、他方の面にバンプ形成用第二めっき18aが形成された図1(f)の基板を得る。   Next, after the second plating 18 and the metal foil 17 exposed from the etching resist pattern 16 are removed by etching (ferric chloride solution, cupric chloride solution, etc.), the etching resist pattern 16 is peeled off. Thus, the substrate shown in FIG. 1F is obtained in which the wiring pattern 5 (in the drawing, the land portion of the via hole) is formed on one surface and the bump forming second plating 18a is formed on the other surface.

ここで、バンプ形成用第二めっき18aを形成する際のエッチング処理においても、上記バンプ形成用第一めっき15aを形成したときと同様に、エッチングレジストパターン16の非形成部に位置する第一金属層1の一部が僅かにエッチングされる。   Here, also in the etching process when forming the second bump forming plating 18a, the first metal located in the non-formation portion of the etching resist pattern 16 is the same as when the first bump forming plating 15a is formed. A part of layer 1 is slightly etched.

次に、図1(g)に示したように、バンプ形成面に所望のエッチングレジストパターン16を形成するとともに、外層の配線パターン5が形成された面の全面にエッチングレジスト16aを形成し、次いで、露出している残りの第一金属層1をアルカリエッチャントを用いたエッチング処理にて除去した後(実際には、バンプ形成用第一めっき15aとバンプ形成用第二めっき18aも側面から若干エッチングされる)、当該エッチングレジストパターン16、及びエッチングレジスト16aを剥離する(図2(h)参照)。   Next, as shown in FIG. 1G, a desired etching resist pattern 16 is formed on the bump forming surface, and an etching resist 16a is formed on the entire surface on which the outer wiring pattern 5 is formed. After the exposed first metal layer 1 is removed by etching using an alkali etchant (actually, the first bump forming plating 15a and the second bump forming plating 18a are slightly etched from the side surfaces. The etching resist pattern 16 and the etching resist 16a are peeled off (see FIG. 2H).

そして最後に、表面に露出しているバリア金属層3を除去することによって、2層の配線パターン層とトップ径の細りを抑制した外部接続端子用バンプ13とを備えた図2(i)のプリント配線板Pを得る。   Finally, the barrier metal layer 3 exposed on the surface is removed to provide two wiring pattern layers and external connection terminal bumps 13 with reduced top diameter reduction as shown in FIG. A printed wiring board P is obtained.

本発明における最も注目すべき点は、高アスペクト比のバンプの形成方法として、バンプ形成の際のエッチング処理を複数回に分割し、当該エッチング処理を行なう前にめっきを析出させるようにした点である。   The most notable point in the present invention is that, as a method for forming a high aspect ratio bump, the etching process at the time of bump formation is divided into a plurality of times, and plating is deposited before the etching process is performed. is there.

これにより、各エッチング処理前に、エッチング途中のバンプ形成部の側面にめっきが補給される形となるため、サイドエッチングを抑制することができる。   Thereby, since it will be in the form where plating is replenished to the side surface of the bump formation part in the middle of etching before each etching process, side etching can be suppressed.

また、上記でも説明したように、バンプ形成用のめっき(図中の15a、18a)を形成する際のエッチング処理においては、第一金属層1も僅かにエッチングされるため(図1(c)、(f)参照)、最終的に除去すべき第一金属層1の厚さが薄くなる。   Further, as described above, in the etching process for forming the bump forming plating (15a and 18a in the figure), the first metal layer 1 is also slightly etched (FIG. 1 (c)). , (F)), the thickness of the first metal layer 1 to be finally removed is reduced.

その結果、エッチング処理時間を短縮することができるため、残った第一金属層1を除去する最終のエッチング処理においても、サイドエッチングを抑制することができる。   As a result, the etching process time can be shortened, so that side etching can be suppressed even in the final etching process for removing the remaining first metal layer 1.

以上のことから、1回のエッチング処理によって高アスペクト比のバンプを形成する従来の方法と比較して、バンプトップ径の細りを抑制することができる。   From the above, it is possible to suppress the reduction of the bump top diameter as compared with the conventional method of forming a high aspect ratio bump by a single etching process.

また、本発明を説明するに当たって、2層の配線パターン層を備えたプリント配線板を例にして説明したが、構成としてはこの限りでなく、図1(d)〜図1(f)の工程を繰り返し行ない、且つ、厚みのある第一金属層の厚さを調整することによって、これ以上の層数とすることも可能である。   In describing the present invention, a printed wiring board having two wiring pattern layers has been described as an example. However, the configuration is not limited to this, and the steps of FIGS. 1 (d) to 1 (f) are performed. By repeating the above and adjusting the thickness of the thick first metal layer, it is possible to increase the number of layers.

本発明のプリント配線板の製造方法を示す概略断面工程説明図。BRIEF DESCRIPTION OF THE DRAWINGS The schematic cross-sectional process explanatory drawing which shows the manufacturing method of the printed wiring board of this invention. 従来のプリント配線板の製造方法を示す概略断面工程説明図。Schematic cross-sectional process explanatory drawing which shows the manufacturing method of the conventional printed wiring board.

符号の説明Explanation of symbols

1:第一金属層
2:第二金属層
3:バリア金属層
4、4a:金属基板
5:配線パターン
6:回路形成用基板
7:層間接続用バンプ
8:第四金属層
9:バリア金属層
10、10a:絶縁層
11:絶縁膜
12:開口部
13:外部接続端子用バンプ
14:補強部
15:第一めっき
15a:バンプ形成用第一めっき
16:エッチングレジストパターン
16a:エッチングレジスト
17:金属箔
18:第二めっき
18a:バンプ形成用第二めっき
19:非貫通孔
P、Pa:プリント配線板
1: first metal layer 2: second metal layer 3: barrier metal layer 4, 4a: metal substrate 5: wiring pattern 6: circuit forming substrate 7: bump for interlayer connection 8: fourth metal layer 9: barrier metal layer DESCRIPTION OF SYMBOLS 10, 10a: Insulating layer 11: Insulating film 12: Opening part 13: External connection terminal bump 14: Reinforcing part 15: First plating 15a: First plating for bump formation 16: Etching resist pattern 16a: Etching resist 17: Metal Foil 18: second plating 18a: second plating for bump formation 19: non-through hole P, Pa: printed wiring board

Claims (2)

厚みのある金属層にエッチングを行なうことによって、高アスペクト比のバンプを形成するようにしたプリント配線板の製造方法であって、当該厚みのある金属層の表面にめっきを析出させる工程と、当該めっき表面の少なくともバンプ形成部にエッチングレジストパターンを形成する工程と、エッチングにより当該エッチングレジストパターンから露出しているめっきを除去する工程と、当該エッチングレジストパターンを剥離する工程とを1セットとして必要回数行ない、次いで、最終のエッチングレジストパターンを形成する工程と、当該最終のエッチングレジストパターンから露出している金属層を除去する工程と、当該最終のエッチングレジストパターンを剥離する工程とを含んでなるプリント配線板の製造方法。   A method of manufacturing a printed wiring board in which a high aspect ratio bump is formed by etching a thick metal layer, the step of depositing plating on the surface of the thick metal layer, A necessary number of times, including a step of forming an etching resist pattern on at least a bump forming portion of the plating surface, a step of removing the plating exposed from the etching resist pattern by etching, and a step of removing the etching resist pattern as one set Printing, and then forming a final etching resist pattern, removing a metal layer exposed from the final etching resist pattern, and peeling the final etching resist pattern A method for manufacturing a wiring board. 当該めっきは、厚みのある金属層の表面とは反対の面の配線パターン形成面にも同時に形成され、当該配線パターン形成と同時にエッチング加工されることを特徴とする請求項1記載のプリント配線板の製造方法。   2. The printed wiring board according to claim 1, wherein the plating is simultaneously formed on the wiring pattern forming surface opposite to the surface of the thick metal layer and is etched simultaneously with the wiring pattern formation. Manufacturing method.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295486A (en) * 1988-05-24 1989-11-29 Mitsubishi Electric Corp Manufacture of printed wiring board with thick plate conductor
JP2002043506A (en) * 2000-07-31 2002-02-08 North:Kk Wiring circuit board and its manufacturing method and semiconductor integrated circuit device and its manufacturing method
JP2003273284A (en) * 2002-03-19 2003-09-26 Hitachi Chem Co Ltd Semiconductor packaging substrate and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295486A (en) * 1988-05-24 1989-11-29 Mitsubishi Electric Corp Manufacture of printed wiring board with thick plate conductor
JP2002043506A (en) * 2000-07-31 2002-02-08 North:Kk Wiring circuit board and its manufacturing method and semiconductor integrated circuit device and its manufacturing method
JP2003273284A (en) * 2002-03-19 2003-09-26 Hitachi Chem Co Ltd Semiconductor packaging substrate and its manufacturing method

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