JP2006138826A - Sheet-like probe, its manufacturing method, and its application - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To secure the strength of an insulating film while securing insulation between adjacent electrode structures even if the arrangement pitch of the electrode structures is short in a sheet-like probe, which is used for electrical inspection on circuit devices such as large wafers in which electrodes to be inspected of, for example, fine pitch are formed, and in which the electrode structures to be connected to the electrodes to be inspected of the circuit devices are penetrated through and supported at the insulating film and a contact film is supported at a support. <P>SOLUTION: Both a first sheet 24 in which surface electrodes 17a are raised from the surface of a metal sheet 21 and a second sheet in which a porous film 11, namely the support, is integrated with the insulating film 16 and through-holes 30 are formed by etching from both surface sides of the insulating film 16 are overlaid on each other in such a way that the surface electrodes 17a may be inserted in the through-holes 30. The electrode structures 17 are formed by plating the inside of the through-holes 30. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a sheet-like probe used for electrical inspection of a circuit device, a manufacturing method thereof, and its application. More specifically, for example, the present invention is used to perform electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state. The present invention relates to a sheet-like probe to be manufactured, a manufacturing method thereof, and an application thereof.

  For example, in an electrical inspection of a circuit device such as a wafer on which a large number of integrated circuits are formed or an electronic component such as a semiconductor element, a probe device having inspection electrodes arranged in accordance with a pattern of electrodes to be inspected of a circuit device to be inspected It is used. Conventionally, a probe device in which inspection electrodes (inspection probes) made of pins or blades are arranged is used as such a device.

  When the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed, it is necessary to arrange a large number of inspection probes in order to produce a wafer inspection probe device. It becomes expensive. Further, when the pitch of the electrodes to be inspected is small, it is difficult to manufacture the probe device itself. In addition, since the wafer is generally warped, and the state of the warp varies depending on the product (wafer), each of the inspection probes of the probe apparatus can be stably and reliably applied to a large number of electrodes on each wafer. It is practically difficult to make it contact.

  In order to cope with such a problem, an anisotropic conductive sheet is arranged on one surface of a circuit board for inspection in which a plurality of inspection electrodes are formed according to the pattern of the electrode to be inspected on one surface. In addition, there has been proposed a probe card in which a sheet-like probe in which a plurality of electrode structures extending through the insulating sheet in the thickness direction is arranged is arranged (Patent Document 1, Patent Document 2).

As shown in FIG. 25, the probe of the probe card has a flexible circular insulating sheet 91 made of a resin such as polyimide, and the insulating sheet 91 has a plurality of electrode structures extending in the thickness direction. The body 95 is arranged according to the pattern of the electrodes to be inspected of the circuit device to be inspected. Each electrode structure 95 includes a protruding surface electrode portion 96 exposed on the surface of the insulating sheet 91 and a plate-like back surface electrode portion 97 exposed on the back surface of the insulating sheet 91, with the insulating sheet 91 in the thickness direction. The structure is integrally connected through a short-circuit portion 98 extending therethrough. Further, a ring-shaped support plate 92 made of ceramics or the like is provided on the peripheral edge of the insulating sheet 91 for the purpose of controlling the thermal expansion of the insulating sheet 91 or the like.
Japanese Patent Laid-Open No. 2001-15565 Japanese Patent Laid-Open No. 2002-184821

  As described above, in recent years, it is necessary to perform electrical inspection on a large wafer in which a large number of electrodes to be inspected are arranged at a fine pitch. Specifically, for example, a wafer in which 5000 or more, and in some cases, 10,000 or more test electrodes are formed on a wafer having a diameter of 8 inches or more is an object of electrical inspection. In this case, the pitch of the test electrodes is It becomes 160 μm or less. In order to inspect such a wafer, a sheet-like probe having a large area corresponding to the wafer and having 5000 or more or 10,000 or more electrode structures arranged at a pitch of 160 μm or less must be used. Don't be.

  However, in the structure of the conventional sheet-like probe 90 in which all the electrode structures 95 are directly connected to one insulating sheet 91 as shown in FIG. 27, for example, the insulating sheet 91 is thermally expanded in a burn-in test. There are some points to be improved, such as misalignment between the electrode structure 95 and the electrode to be inspected.

  In order to cope with these points, for example, a frame plate made of metal or the like having through holes formed at respective positions corresponding to each integrated circuit on the wafer is prepared, and an insulating sheet is pasted on this frame plate, and the insulating sheet It is conceivable that an electrode structure is formed in a portion disposed in each through-hole of the frame plate. That is, for example, at each position corresponding to each integrated circuit on the wafer, a connecting portion (contact film) with the wafer in which the electrode structure is penetrated and supported by the insulating film is provided, and this contact film is supported like a metal frame plate. If it is a sheet-like probe supported by a body, it is considered that problems in the conventional sheet-like probe can be improved. When such a sheet-like probe was actually produced, it was confirmed that the burn-in test can be performed satisfactorily even for a large wafer on which a fine pitch inspection electrode is formed.

  In the manufacturing process of this sheet-like probe, it is necessary to form a through hole for forming an electrode structure on an insulating film such as polyimide. As shown in FIG. 26, the through hole is formed by forming a pattern of a photoresist film 83 having an opening 83a in a portion where the through hole is formed on one surface of the polyimide film 81, and immersing the entire sheet in an etching solution. Can be obtained. In this method, a through-hole 81a in which the metal film 82 laminated on the polyimide film 81 is exposed on the bottom surface is formed, and an electrode structure is formed through a process of performing electrolytic plating using the metal film 82 as a common electrode.

  However, when a through-hole is formed in the polyimide film by etching, the through-hole 81a is tapered as shown in FIG. 26, and the diameter gradually decreases toward the back. For this reason, when a polyimide film having a large thickness is used, the hole is closed before reaching the metal layer 82, and a through hole cannot be formed.

  That is, the angle (etching angle) θ of the inclined surface of the through hole 81a varies depending on the processing conditions, but is, for example, 45 ° to 50 °. For this reason, when the polyimide film is etched from one side, the hole can be opened only partway through the polyimide film 81 unless the thickness t of the polyimide film 81 is ½ or less of the opening diameter φ1.

  As the electrode pitch of the wafer to be inspected is narrowed, the arrangement pitch of the electrode structure of the sheet-like probe is also shortened. Currently, it is usually 100 to 120 μm, but in the future, for example, less than 100 μm, and further 80 μm or less It is thought that it is necessary to make it shorter. On the other hand, in order to ensure insulation between adjacent electrode structures, for example, 40 to 50 μm is required as the width of the insulating portion between them (the difference between the arrangement pitch of the electrode structures and the opening diameter φ1). It is said. When using a thick film to ensure the strength of the polyimide film, it is necessary to increase the opening diameter φ1 as described above in order to form a through hole by etching. If the opening diameter φ1 is increased while keeping the pitch constant, it becomes impossible to ensure insulation between adjacent electrode structures. For this reason, when the arrangement pitch of the electrode structure is reduced, the thickness of the polyimide film is limited. For example, when the arrangement pitch of the electrode structure is 120 μm and the opening diameter φ1 of the through hole is 70 μm, the thickness of the polyimide film to be used The thickness t must be 35 μm or less, and the thickness t must be further reduced in order to make the opening diameter φ2 on the bottom surface side more than a certain level.

When the electrode structure is formed in the tapered through hole 81a as shown in FIG. 26, if the opening diameter φ2 on the back side in the etching direction is small, the electrical resistance value increases. Therefore, the opening diameter φ2 of the small diameter portion is as large as possible. It is desirable.
Further, when the opening diameter φ2 is small, the small diameter portion affects the electric resistance value, so that there is a concern that the variation in the electric resistance value between the electrode structures provided in the sheet-like probe increases. .
Furthermore, although the electrode structure is formed by electroplating, it is practically difficult to supply a current having a uniform current density distribution to the entire surface of the metal layer in the electrolytic plating process. Due to the non-uniformity, the growth rate of the plating layer is different for each through hole of the insulating sheet, so that the protrusion height and the outer diameter of the surface electrode portion to be formed vary. When there is a large variation in the protruding height of the surface electrode part, it becomes difficult to make a stable electrical connection to the circuit device under test. On the other hand, when there is a large variation in the outer diameter of the surface electrode part Adjacent surface electrode parts may be short-circuited.

The present invention is used to perform an electrical inspection on a circuit device such as a large wafer on which electrodes to be inspected with a fine pitch are formed, and the electrode structure connected to the electrodes to be inspected is insulated. In the sheet-like probe in which the contact film supported by the film is supported by the support, even if the arrangement pitch of the electrode structures is shortened, the insulation film strength is increased while ensuring the insulation between the adjacent electrode structures. The purpose is to secure.
In the sheet-like probe described above, the strength of the insulating film can be ensured while ensuring the insulation between the adjacent electrode structures even when the arrangement pitch of the electrode structures is shortened, and the surface electrode portion protrudes. It is an object of the present invention to provide a sheet-like probe having small variations in height and outer diameter, and further having a small electric resistance value of the electrode structure and small variations.

The manufacturing method of the sheet-like probe of the present invention,
A method of manufacturing a sheet-like probe in which a plurality of electrode structures connected to an electrode to be inspected of a circuit device to be inspected are formed so as to penetrate an insulating film made of a flexible resin,
A surface electrode portion made of metal is erected at each position where the electrode structure is formed on the surface of the metal sheet, and if necessary, a first sheet in which an insulating sheet is laminated on the back surface of the metal sheet is prepared. Process,
An insulating film is integrated with a sheet-like support having at least one through hole so as to cover the through hole, and an insulating film is provided at each position where the electrode structure is formed inside the through hole. Preparing a second sheet in which a through-hole penetrating is formed;
Superimposing the first sheet and the second sheet such that the surface electrode portion of the first sheet is inserted into a through-hole penetrating the insulating film of the second sheet;
Plating over the surface from the through hole of the insulating film in the second sheet, thereby forming a surface electrode portion exposed on the surface of the insulating film in the electrode structure;
Forming the surface electrode portion protruding from the surface of the insulating film by etching the metal sheet in the first sheet so as to leave a portion corresponding to the surface electrode portion of the electrode structure;
It is characterized by including.
In the method of manufacturing a sheet-like probe according to the present invention, in the step of preparing the second sheet, a resist pattern in which a position for forming a through hole is opened in the sheet in which the insulating film is integrated with the support. Is preferably formed on both sides of the sheet, and then the through hole is formed by etching from both sides of the insulating film with an etching solution.

According to the sheet-like probe manufactured in this way, the contact film is supported in the through hole of the support, so that the area of the contact film disposed in the through hole can be reduced. For example, if a support body in which a plurality of through holes are formed corresponding to an electrode region in which an electrode to be inspected of a circuit device to be inspected is used, the support body is arranged at each of the through holes and supported at the peripheral edge thereof. The area of each contact film formed can be greatly reduced.

  Since the contact film with such a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film, the thermal expansion of the insulating film can be reliably regulated by the support. Therefore, even if the inspection object is, for example, a large-area wafer having a diameter of 8 inches or more or a circuit device having a very small pitch of the electrode to be inspected, the electrode structure and the electrode to be inspected due to temperature change during the burn-in test Therefore, it is possible to reliably maintain a good electrical connection state.

  And said sheet-like probe forms the through-hole for forming an electrode structure by etching from the both surfaces side of the sheet | seat which integrated the insulating film so that the through-hole of a support body is covered, This sheet | seat It is manufactured using. When the through hole is formed by the etching solution, as described above, the through hole is formed in a tapered shape so that the diameter gradually decreases from the opening to the back. The hole is blocked and cannot penetrate, but by etching from both sides of the insulating film, the shape gradually becomes narrower from the opening on both sides to the center of the penetration direction, and the small diameter part of the hole is Since it is near the center, the thickness of the insulating film in which the hole is blocked with respect to a predetermined opening diameter is doubled by simple calculation as compared with the case where etching is performed from only one side of the insulating film.

  In this way, by forming the through holes by etching from both sides of the insulating film, the thickness range of the insulating film that can be used to form the through holes having a predetermined opening diameter is increased. In order to shorten the arrangement pitch, even if the opening diameter of the through hole is reduced to such an extent that insulation between adjacent electrode structures can be ensured, a thick insulating film that can ensure the desired strength can be used.

  Furthermore, when etching from both sides of the insulating film, compared to etching from only one side of the insulating film, the small diameter portion when the through hole is formed with the same opening diameter using the insulating film of the same thickness Since the diameter can be increased, the electric resistance value of the electrode structure can be reduced, and the variation in the electric resistance value between the electrode structures can also be reduced. Therefore, the electrical inspection of the circuit device can be performed with a good and stable electrical connection state.

In a preferred embodiment of the above sheet-like probe, the support is in a ring shape, and a single contact film is supported in the through hole.
In another preferable aspect of the sheet-like probe, a plurality of through holes are formed in the support, and the contact film is supported in each of the through holes.
As the support, it is preferable to use a porous film in which micropores are formed. Specific examples of the porous film include a mesh and a nonwoven fabric made of organic fibers.

  By using a porous film as a support, an insulating film formed of a resin forms an integrated structure in which the porous film enters the inside, and the contact film is supported, so that the fixing strength between the contact film and the support is high. High, and high repeated durability can be obtained in electrical inspection by an inspection apparatus using the sheet-like probe.

  Further, it is preferable to use a metal frame plate as the support. When the metal frame plate is used as a support, the contact film is supported with the peripheral edge of the through hole of the metal frame plate sandwiched from both sides by the insulating film, thereby increasing the fixing strength between the contact film and the support. can do.

The pitch of the electrode structure is preferably 40 to 250 μm, more preferably 40 to 150 μm, and still more preferably 40 to 120 μm. The total number of electrode structures is preferably 5000 or more.
The above-described sheet-like probe can be suitably used for conducting an electrical inspection of an integrated circuit in a wafer state for a plurality of integrated circuits formed on the wafer.

The probe card of the present invention is a circuit board for inspection in which an inspection electrode corresponding to an electrode to be inspected of a circuit device to be inspected is formed,
An anisotropic conductive connector disposed on the circuit board for inspection;
The sheet-like probe disposed on the anisotropic conductive connector or the sheet-like probe obtained by the manufacturing method is provided.

A circuit device inspection apparatus according to the present invention includes the probe card described above.
According to the wafer inspection method of the present invention, each integrated circuit of a wafer on which a plurality of integrated circuits are formed is electrically connected to a tester via the probe card, and the electrical inspection of each integrated circuit is performed. Features.
According to these probe card, circuit device inspection apparatus, and wafer inspection method, during the burn-in test, the positional deviation between the electrode structure of the sheet-like probe and the electrode to be inspected due to the temperature change is reliably prevented. Thus, a good electrical connection state can be stably maintained.
In addition, even when the inspection device pitch of the circuit device is short and the arrangement pitch of the electrode structure of the sheet-like probe is short, a thick insulating film can be used. It is good.

According to the present invention, during the burn-in test, a positional deviation due to a temperature change between the electrode structure of the sheet-like probe and the inspected electrode of the circuit device is prevented, so that a good electrical connection state can be stably maintained. can do.
Further, according to the present invention, even if the arrangement pitch of the electrode structures of the sheet-like probe is shortened, the strength of the insulating film can be ensured while ensuring the insulation between the adjacent electrode structures.
Then, the surface electrode portion is formed so as to stand on the metal sheet, inserted into the through-hole formed in the insulating film, the short-circuit portion and the back electrode portion are filled and formed to form the electrode structure, and then the surface Since the metal sheet member for electrode formation is removed, variation in the protruding height of the surface electrode portion can be reduced, and the outer diameter of the surface electrode portion can be reduced, so that electrodes are formed at a small pitch. It is possible to reliably achieve a stable electrical connection state with respect to the circuit device.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the attached drawings are for explanation, and specific sizes, shapes, and the like in the respective parts are based on the description in the present specification and those skilled in the art based on the prior art.
<Sheet probe>
1A and 1B are diagrams showing an embodiment of a sheet-like probe of the present invention. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line XX. This sheet-like probe 10 has a metal frame plate 14 having through holes 12 formed at positions corresponding to the respective integrated circuits on the wafer to be inspected as a support, and a contact film 15 is disposed in the through holes 12. is doing.
As shown in FIGS. 2 and 3, the contact film 15 has a structure in which an electrode structure 17 is formed through a flexible insulating film 16. In other words, a plurality of electrode structures 17 extending in the thickness direction of the insulating film 16 are arranged apart from each other in the surface direction of the insulating film 16 according to a pattern corresponding to the inspection target electrode of the wafer to be inspected.

The electrode structure 17 penetrates in the thickness direction of the insulating film 16, the protruding surface electrode portion 17 a exposed on the surface of the insulating film 16, the plate-like back electrode portion 17 b exposed on the back surface of the insulating film 16, and the insulating film 16. The extending short circuit portion 17c is integrated. A coating film 18 made of a highly conductive metal is formed on the back electrode portion 17b.
The contact film 15 is supported by the metal frame plate 14 at a support portion 19 around the through hole 12 of the metal frame plate 14. As shown in FIGS. 1B and 6A, in the support portion 19, the contact film in a state where the peripheral edge portion of the through hole 12 in the metal frame plate 14 is sandwiched from both sides by the insulating film 16. 15 is supported.

  FIG. 5 shows an enlarged view of the electrode structure 17. As illustrated, the through hole 30 of the insulating film 16 in which the short-circuit portion 17c is formed has a constricted shape in which the diameter gradually decreases from the opening on both sides toward the central portion in the penetration direction. This through hole 30 is arranged in the center in the thickness direction by disposing a resist pattern having openings at positions where the through holes 30 are formed on both sides of the insulating film 16 and dissolving the insulating film from both sides with an etching solution. It is formed by penetrating a hole in the vicinity of the part.

  The inclination angle θ of the inner surface of the through hole 30 is, for example, 45 ° to 50 °, depending on the processing conditions when a polyimide film is used as the insulating film 16. It is desirable that the hole diameter φ2 of the smallest diameter portion at the center of the through hole is as large as possible. If the hole diameter φ2 is too small, the plating solution does not circulate to the back when plating inside the through hole 30 by electrolytic plating. May occur. Moreover, the electrical resistance value of the electrode structure 17 increases, and the variation of the electrical resistance value in each electrode structure 17 becomes large. The hole diameter φ2 of the small diameter portion depends on the opening diameter φ1 of the through hole 30 and the thickness t of the insulating film 16.

A part of the surface electrode portion 17a made of metal is contained in the through hole 30 of the insulating film 16 in the short-circuit portion 17c.
As will be described later, the surface electrode portion 17a is a sheet (first sheet) in which the surface electrode portion 17a is erected on a metal sheet for forming the surface electrode portion 17a in the manufacturing process of the sheet-like probe. ) And a sheet (second sheet) in which the insulating film 16 in which the through-holes 30 are formed by etching from both sides is integrated with the porous film 11, and a part or all of the surface electrode portion 17 a is formed in the through-holes. By inserting them into 30 and superposing them, they are stacked and fixed in a predetermined positional relationship.
The diameter of the surface electrode portion 17a is smaller than the hole diameter φ2 of the central small diameter portion in the through hole 30 of the insulating film 16, and a gap is formed between the small diameter portion and the surface electrode portion 17a. When the inside of the through hole 30 is plated by plating, the electrolytic plating solution passes through this gap and circulates to the back of the through hole 30. If this gap is too small, the plating solution may not circulate deeply and voids may occur.

Examples of the metal constituting the metal frame plate 14 include iron, copper, nickel, chromium, cobalt, magnesium, manganese, molybdenum, palladium, titanium, tungsten, aluminum, and alloys or alloy steels thereof. For example, an Invar type alloy such as Invar, an Elinvar type alloy such as Elinvar, Super Invar, Kovar, 42 alloy or the like can be used.
In addition, the linear thermal expansion coefficient of the metal frame plate 14 is 3 × 10 ⁻⁵ / K or less from the viewpoint of preventing misalignment between the inspected electrode of the circuit device and the electrode structure of the sheet-like probe in the burn-in test. It is preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, more preferably 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
The thickness of the metal frame plate 14 is preferably 3 to 150 μm, more preferably 5 to 100 μm. If this thickness is too small, the strength required for the frame plate for supporting the contact film 15 may not be obtained.

  The thickness of the insulating film 16 is preferably 5 to 150 μm, more preferably 7 to 100 μm, and still more preferably 10 to 70 μm from the viewpoint of obtaining good flexibility. However, it is desirable to make the insulating film 16 as thick as possible in order to ensure the necessary strength and to prevent the sheet-like probe from being bent undesirably and to conduct an electrical test in a good electrical connection state.

Examples of the material of the electrode structure 17 include nickel, iron, copper, gold, silver, palladium, iron, cobalt, tungsten, rhodium, and alloys or alloy steels thereof. The entire electrode structure 17 may be formed of a single metal or alloy, or may be formed by stacking two or more kinds of metals or alloys.
When performing an electrical inspection on the electrode to be inspected having an oxide film formed on the surface, the electrode structure 17 of the sheet-like probe and the electrode to be inspected are brought into contact with each other, and the surface electrode portion 17a of the electrode structure 17 causes the electrode to be inspected. It is necessary to electrically connect the electrode structure 17 and the electrode to be inspected by destroying the oxide film on the surface. For this reason, it is desirable that the surface electrode portion 17a of the electrode structure 17 has such a hardness that the oxide film can be easily broken. In order to obtain such a surface electrode portion 17a, a powder material having a high hardness can be contained in the metal forming the surface electrode portion 17a.
Examples of such a powder substance include diamond powder, silicon nitride, silicon carbide, ceramics, and glass. By including an appropriate amount of these non-conductive powder substances, the conductivity of the electrode structure 17 can be increased. Without damaging, the oxide film formed on the surface of the electrode to be inspected can be destroyed by the surface electrode portion 17a of the electrode structure 17.

Further, in order to easily destroy the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 17a of the electrode structure 17 may be a sharp protrusion, and fine irregularities are formed on the surface of the surface electrode portion 17a. May be. Thus, the shape of the surface electrode portion 17a may be an appropriate shape as necessary.
The pitch p (FIG. 3) of the electrode structure 17 in the contact film 15 is set according to the pitch of the electrode to be inspected on the wafer to be inspected, preferably 40 to 250 μm, more preferably 40 to 150 μm, and still more preferably. 40-120 μm. Here, “the pitch of the electrode structures” is the distance between the centers of the adjacent electrode structures and the shortest distance. For example, several tens or more of electrode structures 17 are formed on one contact film 15 depending on the number of electrodes to be inspected of the integrated circuit on the wafer.

  The ratio of the projecting height to the diameter R in the surface electrode portion 17a of the electrode structure 17 is preferably 0.2 to 3, more preferably 0.25 to 2.5. By satisfying such a condition, even when the pitch of the electrodes to be inspected is small, the electrode structure 17 having a pattern corresponding to the electrodes to be inspected can be easily formed, and the electric structure is stable with respect to the wafer. Connection is reliably obtained.

The diameter R of the surface electrode portion 17a is preferably 1 to 3 times, more preferably 1 to 2 times, the diameter r (opening diameter φ1 in FIG. 5) of the short-circuit portion 17c. Further, the diameter R of the surface electrode portion 17a is preferably 30 to 75%, more preferably 40 to 60% of the pitch p of the electrode structure 17.
The outer diameter L of the back electrode part 17b may be larger than the diameter of the short-circuit part 17c and smaller than the pitch p of the electrode structure 17, but is preferably as large as possible. Stable electrical connection can also be reliably performed to the conductive sheet.
The diameter r of the short-circuit portion 17c is preferably 15 to 75% of the pitch p of the electrode structure 17, and more preferably 20 to 65%.

The specific dimensions of the electrode structure 17 will be described. The protruding height of the surface electrode portion 17a is preferably 15 to 50 μm from the viewpoint of achieving a stable electrical connection to the electrode to be inspected. Preferably it is 15-30 micrometers.
The diameter R of the surface electrode portion 17a is set in consideration of the above conditions, the diameter of the electrode to be inspected, etc., and is, for example, 30 to 200 μm, and preferably 35 to 150 μm.
The diameter r of the tip of the surface electrode portion 17a is, for example, 5 to 100 μm, preferably 10 to 50 μm.
The diameter of the short-circuit portion 17c is preferably 10 to 120 μm, more preferably 15 to 100 μm from the viewpoint of obtaining a sufficiently high strength.
The thickness of the back electrode part 18b is preferably 0.1 to 150 μm, more preferably 1 to 75 μm, from the viewpoint of sufficiently increasing the strength and obtaining good repeated durability.

The coating film 18 formed on the back electrode portion 17b of the electrode structure 17 is preferably made of a chemically stable highly conductive metal, and specifically includes gold, silver, palladium, rhodium, for example. .
Also, a metal coating film can be formed on the surface electrode portion 17a of the electrode structure 17. For example, when the electrode to be inspected is formed of a solder material, the solder material is prevented from diffusing. In view of this, it is desirable to coat the surface electrode portion 17a with a diffusion-resistant metal such as silver, palladium, or rhodium.

A flat plate ring-shaped support plate having rigidity can be provided on the peripheral edge of the sheet-like probe 10. Examples of the material for the support plate include Invar type alloys such as Invar and Super Invar, Elinvar type alloys such as Erin bar, low thermal expansion metal materials such as Kovar and 42 alloy, and ceramic materials such as alumina, silicon carbide, and silicon nitride. Can be mentioned.
By supporting the sheet-like probe 10 with its rigidity by such a support plate, in a probe card described later, for example, by engaging a hole formed in the support plate and a guide pin provided in the probe card, Alternatively, the electrode structure 17 provided on the contact film 15 of the sheet-like probe 10 can be attached to the electrode to be inspected by fitting the support plate and a circumferential step provided on the peripheral portion of the probe card. In addition, it can be easily aligned with the conductive part of the anisotropic conductive connector, and even when repeatedly used for inspection, it can be securely attached to the object to be inspected and the electrode structure 17 can be displaced from a predetermined position. Can be prevented.

4A and 4B are diagrams showing an embodiment of the sheet-like probe of the present invention. FIG. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along line XX.
The sheet-like probe of this embodiment is used for conducting an electrical inspection of each integrated circuit in a wafer state on a wafer of 8 inches or the like on which a plurality of integrated circuits are formed. The sheet-like probe 10 has a porous film 11 in which through holes 12 are formed at positions corresponding to the integrated circuits on the wafer to be inspected, and contact films 15 are arranged in the through holes 12. ing.

As the porous film 11, a flexible porous film, for example, a mesh or a nonwoven fabric made of organic fibers can be used. Examples of the organic fibers forming the mesh or the nonwoven fabric include aramid fibers, polyethylene fibers, polyarylate fibers, nylon fibers, polytetrafluoroethylene fibers and other fluororesin fibers, and polyester fibers. As the mesh made of synthetic fibers, for example, a fiber having a fiber diameter of 15 to 100 μm and a mesh opening diameter of 20 to 200 μm can be used. Further, a membrane filter made of polytetrafluoroethylene or the like having an opening diameter of about 1 to 5 μm may be used.
Moreover, you may use the mesh which consists of metals as the porous film 11, and stainless steel and aluminum are mentioned as a metal which forms a mesh, for example.
According to the sheet-like probe 10 of the present embodiment described above, the support part 19 of the contact film 15 has a structure in which the porous film 11 and the insulating film 16 are integrated as shown in FIG. Therefore, the fixing strength is high, and high repeated durability can be obtained in the electrical inspection by the inspection apparatus using the sheet-like probe.

<Method for producing sheet-like probe>
Hereinafter, the manufacturing method of the sheet-like probe of this invention is demonstrated. First, as shown in FIG. 7A, a metal sheet 21 on which an insulating sheet 20 made of resin or the like is laminated is prepared. For example, a liquid material such as a varnish that is cured to become a polyimide is applied on a copper foil, and a laminated sheet obtained by laminating a polyimide film on the copper foil by being cured, a laminated sheet in which the copper foil is pasted on the polyimide film, A laminated sheet in which electrolytic copper is plated on a polyimide film is commercially available.
A liquid material for forming a polymer material is applied to the upper surface of the metal sheet 21 of the laminated sheet by a method such as spin coating, for example, and a curing process is performed to form the insulating layer 54. (Fig. 7 (b))
The liquid material for forming the polymer material forming the insulating layer 54 is, for example, a liquid material containing a prepolymer, and preferably diluted with a photosensitive polyimide solution or a thermosetting polyimide precursor solution or a polyimide precursor in a solvent. A polyimide varnish or the like is used.
For this laminated sheet, a photoresist film 22 is formed on the insulating layer 54, and a pattern in which an opening 23 is formed at a predetermined position for forming an electrode structure is obtained by exposure and development (FIG. 7C). )).
Next, as shown in FIG. 7D, through holes 25 connected to the metal sheet 21 are formed by etching the insulating layer 54 through the openings 23a.
As an etching solution for etching the insulating layer 54, an amine-based etching solution, a hydrazine-based aqueous solution, a potassium hydroxide aqueous solution, or the like can be used. By selecting the etching processing conditions, the insulating layer 54 can be formed from the surface. A tapered through hole 25 having a smaller diameter toward the bottom surface can be formed.

Next, plating such as electrolytic plating is performed using the metal sheet 21 as a common electrode, and each opening 23 is filled with metal (FIG. 7E). Thereby, the metal plating 29 standingly arranged from each position which forms the electrode structure on the metal sheet 21 is obtained.
Then, after the metal plating 29 is formed, the photoresist film 22 is peeled off, and the insulating layer 54 is removed by, for example, etching, whereby the first sheet 24 in which the columnar metal plating 29 is erected on the metal sheet 21. Got. (FIG. 8 (a)).
In addition, when removing the insulating layer 54, it is preferable to apply a protective film (not shown) to the insulating sheet 20 to protect against etching.
A liquid resin (liquid resist, liquid silicone rubber, thermosetting polyimide, thermoplastic polyimide, polyimide precursor) is formed on the surface of the metal sheet 21 on which the metal plating 29 is erected in a column shape of the laminated sheet by, for example, spin coating. The resin layer 26 is formed by uniformly applying a polyimide varnish obtained by diluting the body with a solvent and performing a curing process. (Fig. 8 (b))
The resin layer 26 is preferably equal to or less than the height of the standing metal plating 29, and the metal plating 29 is preferably exposed from the resin layer 26.
In a later step, by removing the resin layer 26, the thickness of the resin layer 26 can be used as the protruding height of the surface electrode portion 17a in the electrode structure 17. Therefore, the thickness of the resin layer 26 is set in consideration of the protruding height of the surface electrode portion 17a in the electrode structure 17 to be formed. Further, the resin layer 26 can be omitted.
On the other hand, as shown in FIG. 9A, a support 14 made of a metal frame plate in which through holes 12 are previously drilled at positions where contact films are formed is prepared by an arbitrary method such as punching or etching.
Further, as shown in FIG. 9B, a sheet in which the resin sheet 16a is laminated on the metal film 26 is prepared. A thermosetting adhesive 16b is applied to the resin sheet 16a side of the laminated sheet (FIG. 9C), and the support 14 is overlaid thereon (FIG. 10A).

Next, a liquid material 16c for forming a polymer substance is applied from the support 14 side of the obtained laminated sheet and filled into the through hole 12 of the support 14 (FIG. 10B). The polymer material forming liquid 16c is, for example, a liquid containing a prepolymer of a resin for forming the insulating film 16, and a photosensitive polyimide solution or a thermosetting polyimide precursor solution is preferably used. In this case, it is desirable to use a polyimide sheet as the resin sheet 16a and to use a thermosetting adhesive that becomes polyimide by curing.
After the polymer material forming liquid 16c is applied, a curing process is performed, and the cured resin of the polymer material forming liquid 16c, the cured resin of the thermosetting adhesive 16b, and the resin sheet 16a are integrated. An insulating film 16 is obtained (FIG. 10C). By forming the insulating film 16 by such a method, the insulating layer 16 can be structured to sandwich the support 14 from the front and back surfaces, and can be firmly fixed even if the support 14 is a metal frame plate. it can.

Next, as shown in FIG. 11A, a photoresist film 27 is formed on the surface opposite to the metal sheet 26, and then the metal sheet 26 is removed by etching to expose the insulating film 16. (FIG. 11 (b)). A photoresist film 28 is formed on the surface where the insulating film 16 is exposed (FIG. 11C), and an electrode structure is formed on the photoresist films 27 and 28 on both sides by exposure and development. Thus, a pattern in which openings 39 are formed at predetermined positions is obtained (FIG. 12A).
The sheet is immersed in an etching solution that dissolves the insulating film 16 and etching is performed, so that the etching solution comes into contact with the insulating film 16 from the openings 39 and 39 on both sides and dissolves from both sides in the thickness direction. Advances and the hole penetrates near the center (FIG. 12B). The shape of the through hole formed in this way is shown in FIG. As shown in the drawing, the inner surface of the through hole 30 formed by etching is inclined by an angle θ (for example, 45 ° to 50 ° when the insulating film 16 is polyimide), and the diameter φ1 of the opening on both sides is the largest and thick. It has a constricted shape with the smallest diameter φ2 at the center in the vertical direction.

After the through hole 30 is formed, the second sheet 31 is obtained by removing the photoresist films 27 and 28 on both sides (FIG. 12C).
Thus, after producing the 1st sheet | seat 24 of FIG. 8, and the 2nd sheet | seat 31 of FIG. 12, these are piled up. That is, as shown in FIG. 13A, the first sheet 24 is inserted into the through hole 30 that penetrates the insulating film 16 of the second sheet 31 so that the first sheet 24 has the metal plating 29. 24 and the second sheet 31 are overlapped (FIG. 13B). Thus, since the metal plating 29 of the first sheet is inserted into the through hole 30 of the second sheet, the first sheet 24 and the second sheet 31 are fixed to each other in a predetermined positional relationship, and remain as they are. Subsequent plating steps can be performed. However, in some cases, the second sheet 31 may be bonded and fixed by applying a thermosetting adhesive, for example, an adhesive that becomes polyimide by curing, and then superposing them. In this case, it is necessary to remove the adhesive resin remaining on the surfaces of the metal sheet 21 and the metal plating 29 on the bottom surface of the through hole 30, and if necessary, a protective sheet is disposed on the first sheet 24 side, A photoresist pattern having an opening at the position of the through hole 30 is formed on the second sheet 31 side, the inside of the through hole 30 is etched, and the adhesive resin remaining on the surface of the metal plating 29 is removed by etching. can do.
Further, the adhesive resin is applied to a part of the surface of the metal sheet 21 so as to avoid the metal plating 29 portion with respect to the first sheet 24, and the first sheet 24 to which the adhesive resin is applied; The second sheet may be overlaid. In this case, the adhesive resin hardly remains on the surfaces of the metal sheet 21 and the metal plating 29 on the bottom surface of the through hole 30, and the removal of the adhesive resin is easy or unnecessary.
Further, a thin layer of a liquid adhesive resin may be provided uniformly on the surface of the metal sheet 21 of the first sheet 24 by performing spin coating or the like. In this case, by making the thickness of the adhesive resin layer smaller than the height of the metal plating 29, the adhesive resin remaining on the surface of the metal plating 29 is reduced, and the removal of the adhesive resin becomes easy or unnecessary.
Next, a resist layer 71 is formed on the surface of the insulating film 16 using a dry film resist, and a pattern hole 72 that communicates with the through hole 30 corresponding to the back electrode portion 17 b of the electrode structure to be formed on the resist layer 71. Form. (Fig. 13 (c))

Next, metal plating is applied to the pattern hole 72 and the through hole 30 according to the pattern of the electrode structure 17 to be formed on the upper surface of the insulating film 16 using the metal sheet 21 as a common electrode, and the back electrode portion 17b and the short-circuit portion 17c are formed. Form. (Fig. 13 (d))
And as shown in FIG.13 (e), the coating film 18 is formed in the surface of the back surface electrode part 17b. The peritoneum 18 is obtained by performing electroplating using the metal sheet 21 as a common electrode, but can also be obtained by performing chemical plating.
In addition, when the surface of the back electrode part 17c is not flat or when the height varies, it is desirable to flatten the back electrode part 17c and make the height uniform by performing a polishing process. . By forming the coating film 18 after the polishing process, the electrode structure 17 having a small variation in thickness can be obtained.
The coating film 18 can be omitted when the metal constituting the electrode structure 17 has good electrical conductivity.
Next, after peeling off the resist layer 71, a photoresist film 33 is formed on the entire sheet surface on the back electrode portion 17b side (FIG. 14A), and then the insulating sheet 20 is removed by etching to remove the metal sheet 21. Is expressed (FIG. 14B).
Next, the metal sheet 21 is etched to remove the metal sheet 21 and expose the resin layer 26 (FIG. 14C).

Next, the insulating layer 26 is etched to remove the resin layer 26 to expose the insulating layer 16 and to protrude the surface electrode portion 17a. (Fig. 15 (a))
For the etching of the resin layer 26, for example, when the resin layer 26 is made of polyimide, an amine-based etching solution, a potassium hydroxide aqueous solution, or the like can be used.
The polyimide forming the resin layer 26 and the insulating layer 16 is, for example, the resin layer 26 is made of thermoplastic polyimide, the insulating layer 16 is made of thermosetting polyimide, polyimides having different etching rates, and the resin layer 26 has a high etching rate. By selecting polyimide, only the resin layer 26 can be easily selectively removed by etching, and the insulating layer 16 can be left.
The etching process may be continued after the resin layer 26 is removed, and a part of the insulating layer 16 may be removed. By removing the insulating layer 16 by partial etching, the protruding height of the surface electrode portion 17a can be further increased.
Next, a photoresist film 37 is formed on the entire surface of the insulating layer 16 on the side where the surface electrode portion 17a is formed so as to cover the entire surface electrode portion 17a and the insulating layer 16. (Fig. 15 (b))
Next, the photoresist films 33 and 37 are patterned so as to mask the portion where the insulating film 16 remains (FIG. 15C).
This sheet is immersed in an etching solution that dissolves the insulating film 16, thereby removing the insulating film 16 other than the portions masked by the photoresist films 33 and 37 to expose the support 14 (FIG. 16A). Then, by removing the photoresist films 33 and 37, a sheet-like probe in which the contact film 15 is formed in the through hole 12 of the porous film 11 is obtained. (Fig. 16 (b))

Although the method for manufacturing the sheet-like probe has been described above, the sheet-like probe can be obtained by methods other than those described above.
For example, the second sheet 31 in which the insulating film 16 enters the micropores of the porous film 11 and is integrally fixed is the state in which the porous film 11 is stacked on a metal film such as a copper foil, or In a state in which these are bonded and fixed with a thermosetting adhesive, a liquid material for forming a polymer substance can be applied from the surface of the porous film 11 and then cured. Moreover, the sheet | seat with which the porous film 11 and the insulating film 16 were integrated can also be obtained by insert-molding with the porous film 11 in which the through-hole 12 was formed.
The insulating sheet 20 in the first sheet 24 is not always necessary when a protective sheet is formed on the metal sheet 21 in a later process.

  In FIG. 1, the insulating films 16 are formed so as to be isolated from each other, but as shown in FIG. 18 (FIG. 18A is a plan view and FIG. 18B is a cross-sectional view taken along line XX). The insulating film 16 may be integrated to form one continuous support portion 19 as shown in FIG. 19 (FIG. 19A is a plan view and FIG. 19B is a cross-sectional view taken along line XX). Alternatively, the insulating film 16 may be divided so as to include a plurality of contact films 15 (four divisions in the figure), and a continuous support portion 19 may be formed for the plurality of contact films 15.

<Inspection device for probe card and circuit device>
FIG. 20 is a cross-sectional view showing an embodiment of the circuit device inspection apparatus of the present invention and a probe card used therefor, FIG. 21 is a cross-sectional view showing a state before and after assembly of the probe card, and FIG. It is sectional drawing which showed the structure of the principal part of a probe card.
This inspection apparatus is used for conducting an electrical inspection of each integrated circuit on the wafer on which a plurality of integrated circuits are formed in the state of the wafer. The probe card 40 of this inspection apparatus includes an inspection circuit board 41, an anisotropic conductive connector 50 disposed on the surface of the inspection circuit board 41, and a sheet disposed on the surface of the anisotropic conductive connector 50. The probe 10 is provided.

  On the surface of the inspection circuit board 41, a plurality of inspection electrodes 42 are formed according to the pattern of the electrodes to be inspected in all the integrated circuits formed on the wafer to be inspected. As a substrate material of the circuit board 41 for inspection, for example, a composite resin substrate material such as glass fiber reinforced epoxy resin, glass fiber reinforced phenol resin, glass fiber reinforced polyimide resin, glass fiber reinforced bismaleimide triazine resin, glass, etc. Ceramic substrate materials such as silicon dioxide and alumina, and laminated substrate materials obtained by laminating a resin such as an epoxy resin and a polyimide resin using a metal plate as a core material.

In a probe card for use in a burn-in test, the substrate material has a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, more preferably 1 ×. It is desirable to use one having a density of 10 ^{−6 to} 6 × 10 ⁻⁶ / K.
As shown in FIG. 24, the anisotropic conductive connector 50 includes a disk-shaped frame plate 51 in which a plurality of through holes 52 are formed. The through hole 52 of the frame plate 51 is formed corresponding to each integrated circuit formed on the wafer to be inspected, for example. Inside the through hole 52, an elastic anisotropic conductive film 60 having conductivity in the thickness direction is disposed independently of the adjacent elastic anisotropic conductive film 60 in a state where the elastic anisotropic conductive film 60 is supported in the periphery of the through hole 52. Is done. The frame plate 51 is formed with positioning holes (not shown) for positioning the sheet-like probe 10 and the inspection circuit board 41.

  The thickness of the frame plate 51 varies depending on the material, but is preferably 20 to 600 μm, and more preferably 40 to 400 μm. When this thickness is less than 20 μm, the strength required when using the anisotropically conductive connector 50 may not be obtained, and the durability tends to be low. On the other hand, when the thickness exceeds 600 μm, the elastic anisotropic conductive film 60 formed in the through hole 52 becomes excessively thick, and good conductivity in the connection conductive portion 62 and insulation between adjacent connection conductive portions 62 are obtained. May not be obtained.

The shape and size in the surface direction of the through hole 52 of the frame plate 51 are designed according to the size, pitch, and pattern of the electrode to be inspected of the wafer to be inspected.
The material of the frame plate 51 is preferably a material that does not easily deform and is rigid enough to maintain its shape. Specifically, for example, a metal material, a ceramic material, or a resin material is used. Can be mentioned. Specific examples of the metal material include metals such as iron, copper, nickel, titanium, and aluminum, and alloys or alloy steels in which two or more of these are combined. When the frame plate 51 is formed of a metal material, an insulating coating may be applied to the surface of the frame plate 51.

In the probe card for use in the burn-in test, the material of the frame plate 51 is a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, preferably 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, more preferably It is desirable to use one that is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K. Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Erin bar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.
As shown in FIG. 22, the elastic anisotropic conductive film 60 includes a plurality of connecting conductive portions 62 extending in the thickness direction and insulating portions 63 that insulate the connecting conductive portions 62 from each other. The conductive part 62 for connection contains the conductive particles 61 exhibiting magnetism densely in an aligned state in the thickness direction. The connecting conductive portion 62 protrudes from both surfaces of the elastic anisotropic conductive film 60, and the protruding portions 64 are formed on both surfaces.

The thickness of the elastic anisotropic conductive film 60 (the thickness of the connecting conductive part 62 when the connecting conductive part 62 protrudes from the surface) is preferably 50 to 3000 μm, more preferably 70 to 2500 μm, particularly Preferably it is 100-2000 micrometers. If this thickness is 50 μm or more, the elastic anisotropic conductive film 60 having sufficient strength can be obtained reliably. Moreover, if this thickness is 3000 micrometers or less, the connection electroconductive part 62 which has a required electroconductivity characteristic will be obtained reliably.
The protrusion height of the protrusion 64 is preferably 100% or less of the shortest width or diameter of the protrusion 64, and more preferably 70% or less. By forming the projecting portion 64 having such a projecting height, conductivity is reliably obtained without buckling when the projecting portion 64 is pressurized.

  The thickness of one of the forked portions supported by the frame plate 51 of the elastic anisotropic conductive film 60 is preferably 5 to 600 μm, more preferably 10 to 500 μm, and particularly preferably 20 to 400 μm. Further, as shown in the figure, the elastic anisotropic conductive film 60 may be supported only on one side of the frame plate 51 in addition to the case where the elastic anisotropic conductive film 60 is supported on both sides of the frame plate 51.

  As the elastic polymer material forming the elastic anisotropic conductive film 60, a heat-resistant polymer material having a crosslinked structure is preferable. Examples of the curable polymer substance-forming material that can be used to obtain such a crosslinked polymer substance include silicone rubber, polybutadiene rubber, natural rubber, polyisoprene rubber, styrene-butadiene copolymer rubber, acrylonitrile- Conjugated diene rubbers such as butadiene copolymer rubbers and hydrogenated products thereof, block copolymer rubbers such as styrene-butadiene-diene block copolymer rubbers, styrene-isoprene block copolymers, and hydrogenated products thereof, Examples include chloroprene rubber, urethane rubber, polyester rubber, epichlorohydrin rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, and soft liquid epoxy rubber. Among these, silicone rubber is preferable from the viewpoint of moldability and electrical characteristics.

As the silicone rubber, those obtained by crosslinking or condensing liquid silicone rubber are preferable. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be a condensation type, an addition type, a vinyl group or a hydroxyl group. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, and methylphenyl vinyl silicone raw rubber.
The polymer material-forming material can contain a curing catalyst. Examples of such a curing catalyst include organic peroxides such as benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide and ditertiary butyl peroxide, fatty acid azo compounds, and hydrosilylation catalysts.

  The amount of the curing catalyst used is appropriately selected in consideration of the type of polymer substance forming material, the type of curing catalyst, and other curing treatment conditions, but is usually 3 per 100 parts by weight of the polymer substance forming material. ~ 15 parts by weight.

  The conductive particles 61 contained in the connecting conductive portion 62 of the elastic anisotropic conductive film 60 are preferably particles exhibiting magnetism. Examples of such particles exhibiting magnetism include metal particles such as iron, nickel and cobalt, alloy particles thereof, and particles containing these metals. These particles are core particles, and the surface of the core particles is plated with a metal having good conductivity such as gold, silver, palladium, rhodium, or non-magnetic metal particles, inorganic particles or polymers such as glass beads Particles that are core particles and the surface of the core particles are plated with a conductive magnetic material such as nickel or cobalt, or particles that are coated with both a conductive magnetic material and a metal with good conductivity are used. it can.

  In particular, nickel particles are used as core particles, and the surface thereof is plated with a metal having good conductivity such as gold or silver. The surface of the core particles can be coated with the conductive metal by, for example, electroless plating.

  From the point of obtaining good conductivity, the conductive particles with the surface of the core particles coated with the conductive metal have a conductive metal coverage on the particle surface (ratio of the conductive metal coating area to the surface area of the core particles). It is preferably 40% or more, more preferably 45% or more, and particularly preferably 47 to 95%. The coating amount of the conductive metal is preferably 2.5 to 50% by weight of the core particles, more preferably 3 to 45% by weight, still more preferably 3.5 to 40% by weight, particularly preferably 5 to 30%. % By weight.

  The particle diameter of the conductive particles 61 is preferably 1 to 500 μm, more preferably 2 to 400 μm, still more preferably 5 to 300 μm, and particularly preferably 10 to 150 μm. Moreover, it is preferable that the particle diameter distribution (Dw / Dn) of the electroconductive particle 61 is 1-10, More preferably, it is 1-7, More preferably, it is 1-5, Most preferably, it is 1-4. By using the conductive particles 61 satisfying such conditions, the elastic anisotropic conductive film 60 can be easily deformed under pressure, and sufficient electrical contact can be provided between the conductive particles 61 in the connecting conductive portion 62. Is obtained.

  Further, the conductive particles 61 are preferably spherical, star-shaped, or lump-shaped by secondary particles in which primary particles are aggregated in that they can be easily dispersed in the polymer substance-forming material.

  Further, the surface of the conductive particles 51 may be treated with a coupling agent such as a silane coupling agent. Thereby, the adhesiveness of the electroconductive particle 61 and an elastic polymer substance becomes high, and durability in the repeated use of the elastic anisotropic conductive film 60 obtained becomes high.

  The content ratio of the conductive particles 61 in the connecting conductive portion 62 is 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive part 62 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained conductive part 62 for connection tends to be fragile, and necessary elasticity may not be obtained.

  In the polymer substance-forming material, an inorganic filler such as normal silica powder, colloidal silica, airgel silica, alumina, or the like can be contained as necessary. By including such an inorganic filler, the thixotropy of the molding material is ensured and the viscosity thereof is increased. Furthermore, the dispersion stability of the conductive particles 61 is improved, and the strength of the elastic anisotropic conductive film 60 obtained by the curing process is increased.

  The anisotropic conductive connector 50 can be manufactured, for example, by the method described in JP-A-2002-334732.

  A pressure plate 45 that presses the probe card 40 downward is provided on the back surface of the inspection circuit board 31 of the probe card 40, and a wafer mounting on which the wafer 1 to be inspected is placed below the probe card 40. A stand 46 is provided. A heater 47 is connected to each of the pressure plate 45 and the wafer mounting table 46.

  As shown in FIG. 21, the ring-shaped support plate 13 in the sheet-like probe 10 is fitted into a circumferential fitting step portion 48 provided on the pressure plate 45. A guide pin 43 is inserted through the positioning hole of the anisotropic conductive connector 50. As a result, the anisotropic conductive connector 50 is disposed such that the respective connection conductive portions 62 of the elastic anisotropic conductive film 60 are in contact with the respective test electrodes 42 of the test circuit board 41. The sheet-like probe 10 is arranged on the surface of the conductive connector 50 so that each electrode structure 17 is in contact with each connection conductive portion 62 in the elastic anisotropic conductive film 60 of the anisotropic conductive connector 50. So the three are fixed.

  As shown in FIG. 23, the sheet-like probe 10 is not provided with the ring-shaped support plate 13, but is provided in each of the positioning holes of the sheet-like probe 10 and the anisotropic conductive connector 50 on the inspection circuit board 31. These are fixed to the inspection circuit board 41 by inserting the guide pins 43, the inspection electrode 42 of the inspection circuit board 41, the conductive portion 62 for connection of the anisotropic conductive connector 50, and the sheet-like probe 10. The three members may be positioned so that the electrode structures 17 are in contact with each other with a predetermined positional relationship.

  The wafer 1 to be inspected is placed on the wafer mounting table 46, and the surface card portion 17 a in the electrode structure 17 of the sheet-like probe 10 is pressed by pressing the probe card 40 downward by the pressure plate 45. A pressure contact is made with each electrode 2 to be inspected on the wafer 1. In this state, each connection conductive part 62 in the elastic anisotropic conductive film 60 of the anisotropic conductive connector 50 is connected to the test electrode 42 of the test circuit board 41 and the back electrode part of the electrode structure 17 of the sheet-like probe 10. 17a and compressed in the thickness direction. As a result, a conductive path is formed in the connecting conductive portion 62 in the thickness direction, and the inspection electrode 2 of the wafer 1 and the inspection electrode 42 of the inspection circuit board 41 are electrically connected. Thereafter, the heater 1 heats the wafer 1 to a predetermined temperature via the wafer mounting table 46 and the pressure plate 45, and in this state, an electrical inspection is performed on each of the plurality of integrated circuits formed on the wafer 1. Is called.

  According to this wafer inspection apparatus, even when the wafer 1 has a large area of, for example, a diameter of 8 inches or more and the pitch of the electrodes to be inspected 2 is extremely small, a good electrical property for the wafer 1 can be obtained in the burn-in test. The connection state can be maintained stably, and a required electrical inspection can be reliably performed for each of the plurality of integrated circuits on the wafer 1.

  In this embodiment, the inspection electrodes of the probe card are connected to the electrodes to be inspected of all integrated circuits formed on the wafer, and the electrical inspection is performed collectively, but all the integrations formed on the wafer are performed. An inspection electrode of a probe card may be connected to an inspection target electrode of a plurality of integrated circuits selected from among the circuits, and inspection may be performed for each selected region. The number of integrated circuits to be selected is appropriately selected in consideration of the size of the wafer, the number of integrated circuits formed on the wafer, the number of electrodes to be inspected in each integrated circuit, and the like. For example, 16, 32, There are 64 and 128.

  The elastic anisotropic conductive film 60 is formed with a non-connection conductive portion that is not electrically connected to the electrode to be inspected, in addition to the connection conductive portion 62 formed according to the pattern corresponding to the pattern of the electrode to be inspected. May be.

The probe card and circuit device inspection apparatus of the present invention is for inspecting a circuit formed on a semiconductor integrated circuit device such as a semiconductor chip, a package LSI such as BGA and CSP, an MCM, etc. in addition to a wafer inspection. It is good also as a structure.

1A and 1B are diagrams showing an embodiment of a sheet-like probe of the present invention. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line XX. FIG. 2 is an enlarged plan view showing a contact film in the sheet-like probe of FIG. 3 is a cross-sectional view taken along line XX of FIG. 4A and 4B are diagrams showing an embodiment of the sheet-like probe of the present invention. FIG. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along line XX. FIG. 5 is an enlarged cross-sectional view of the electrode structure. FIG. 6A is a cross-sectional view of a contact film support portion in a sheet-like probe using a porous film as a support, and FIG. 6B is a contact film support in a sheet-like probe using a metal frame plate as a support. It is sectional drawing of a part. FIG. 7 is a cross-sectional view for explaining a method for producing a sheet-like probe of the present invention. FIG. 8 is a cross-sectional view for explaining the method for producing the sheet-like probe of the present invention. FIG. 9 is a cross-sectional view for explaining the method for producing the sheet-like probe of the present invention. FIG. 10 is a cross-sectional view for explaining the method for producing the sheet-like probe of the present invention. FIG. 11 is a cross-sectional view for explaining a method for producing a sheet-like probe of the present invention. FIG. 12 is a cross-sectional view for explaining a method for producing a sheet-like probe of the present invention. FIG. 13 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe of the present invention. FIG. 14 is a cross-sectional view for explaining the method for producing the sheet-like probe of the present invention. FIG. 15 is a cross-sectional view for explaining the method for producing the sheet-like probe of the present invention. FIG. 16 is a cross-sectional view illustrating a method for manufacturing a sheet-like probe of the present invention. FIG. 17 is a cross-sectional view of a through hole formed by etching from both sides of the insulating film. 18A and 18B are diagrams showing a modification of the sheet-like probe of the embodiment of FIG. 1, in which FIG. 18A is a plan view and FIG. 18B is a cross-sectional view taken along line XX. 19 is a view showing a modification of the sheet-like probe of the embodiment of FIG. 1, FIG. 19 (a) is a plan view, and FIG. 19 (b) is a cross-sectional view taken along the line XX. FIG. 20 is a cross-sectional view showing an embodiment of a circuit device inspection device and a probe card used therefor according to the present invention. 21 is a cross-sectional view showing each state before and after assembly in the probe card of FIG. FIG. 22 is a cross-sectional view showing the main configuration of the probe card of FIG. FIG. 23 is a sectional view showing another embodiment of the circuit device inspection device of the present invention and a probe card used therefor. FIG. 24 is a plan view showing a frame plate of the anisotropic conductive connector. FIG. 25 is a cross-sectional view of a conventional sheet-like probe. FIG. 26 is a cross-sectional view showing the shape of a through hole formed by etching from one side of the insulating film.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer 2 Electrode to be inspected 10 Sheet-like probe 11 Porous film 12 Through-hole 13 Support plate 14 Metal frame plate 15 Contact film 16 Insulating film 16a Resin sheet 16b Thermosetting adhesive 16c Liquid material for polymer substance formation 17 Electrode structure 17a Front electrode portion 17b Back electrode portion 17c Short-circuit portion 17d Columnar portion 18 Cover film 19 Support portion 20 Insulating sheet 21 Metal sheet 22 Photoresist film 23 Opening 24 First sheet 25 Through hole 26 Metal film 27 Photoresist film 28 Photo Resist film 29 Metal plating 30 Through hole 31 Second sheet 33 Photoresist film 36 Opening 37 Photoresist film 39 Opening 40 Probe card 41 Inspection circuit board 42 Inspection electrode 43 Guide pin 45 Pressure plate 46 Wafer mounting table 47 Heater 50 Anisotropic conductive connector 51 Through frame plate 52 Hole 54 Insulating layer 60 Elastic anisotropic conductive film 61 Conductive particle 62 Connecting conductive part 63 Insulating part 64 Protruding part 65 Supported part 71 Resist layer
72 Pattern hole 81 Polyimide film 81a Through hole 82 Metal film 83 Photoresist film 83a Opening 84 Photoresist film 90 Sheet-like probe 91 Insulating sheet 92 Holding member 95 Electrode structure 96 Front surface electrode portion 97 Back surface electrode portion 98 Short circuit portion

Claims (2)

A method of manufacturing a sheet-like probe in which a plurality of electrode structures connected to an electrode to be inspected of a circuit device to be inspected are formed so as to penetrate an insulating film made of a flexible resin,
A surface electrode portion made of metal is erected at each position where the electrode structure is formed on the surface of the metal sheet, and if necessary, a first sheet in which an insulating sheet is laminated on the back surface of the metal sheet is prepared. Process,
An insulating film is integrated with a sheet-like support having at least one through hole so as to cover the through hole, and an insulating film is provided at each position where the electrode structure is formed inside the through hole. Preparing a second sheet in which a through-hole penetrating is formed;
Superimposing the first sheet and the second sheet such that the surface electrode portion of the first sheet is inserted into a through-hole penetrating the insulating film of the second sheet;
Plating over the surface from the through hole of the insulating film in the second sheet, thereby forming a surface electrode portion exposed on the surface of the insulating film in the electrode structure;
Forming the surface electrode portion protruding from the surface of the insulating film by etching the metal sheet in the first sheet so as to leave a portion corresponding to the surface electrode portion of the electrode structure; The manufacturing method of the sheet-like probe characterized by including. In the step of preparing the second sheet, etching is performed after forming a resist pattern on both surfaces of the sheet in which the positions where the through holes are to be formed are formed on the sheet in which the insulating film is integrated with the support. The method for manufacturing a sheet-like probe according to claim 1, wherein the through hole is formed by etching from both sides of the insulating film with a liquid.

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