JP2006129433A - High frequency switch, composite high frequency parts, and mobile communication apparatus using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high frequency switch, composite high frequency parts, and a mobile communication apparatus wherein it is possible to reduce an insertion loss, and to miniaturize a circuit. <P>SOLUTION: This composite high frequency parts 10 are configured of a diplexer 11, first and second high frequency switches 12 and 13, and first and second filters 14 and 15. Then, the diplexer 11 is configured of inductors L11 and L12 and capacitors C11 to C15. Also, the first high frequency switch 12 is configured of diodes D11 to D13, inductors L21 to L25, and capacitors C21 to C25. Furthermore, the second high frequency switch 13 is configured of diodes D21 and D22, inductors L31 to L33, and capacitors C31 to C33. Also, the first filter 14 is configured of an inductor L41 and capacitors C41 and C42. Furthermore, the second filter 15 is configured of an inductor L51 and capacitors C51 and C52. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a high-frequency switch, a composite high-frequency component, and a mobile communication device using the same, and more particularly to a high-frequency switch that can be used in three different communication systems, a composite high-frequency component, and a mobile communication device using the same.

  Currently, mobile communication devices include DCS (Digital Cellular System) and PCS (Personal Communication Services) using multiple frequency bands, for example, 1.8 GHz band, and GSM (Global System for Mobile communications) using 900 MHz band. A triple-band mobile phone capable of operating has been proposed.

  FIG. 6 is a block diagram showing a front end portion of a conventional triple-band mobile phone. The first and second communication systems having close frequencies are different from those in the 1.8 GHz band DCS and PCS, and the frequency is different from them. An example in which the third communication system is 900 MHz band GSM is shown.

  The front end portion of the triple-band mobile phone includes antenna 1, diplexer 2, first to third switches 3 to 5 having three ports, and first and second filters 6 and 7. The diplexer 2 combines DCS, PCS, or GSM transmission signals when transmitting, and distributes the received signals to the DCS, PCS, or GSM when receiving. The first high frequency switch 3 switches between the DCS and PCS transmitter side and the DCS and PCS receiver side, and the second high frequency switch 4 switches between the DCS receiver Rxd side and the PCS receiver Rxp side. The switching and third high-frequency switch 5 plays a role of switching between the GSM transmitting unit Txg side and the receiving unit Rxg side. The first filter 6 passes the DCS and PCS transmission / reception signals and attenuates the second and third harmonics, and the second filter 7 passes the GSM transmission and reception signals and passes the third harmonics. It plays a role to attenuate.

  Here, the operation of the triple band mobile phone will be described first in the case of DCS. At the time of transmission, a transmission unit Txdp common to the PCS is connected by the first high-frequency switch 3, a transmission signal from the transmission unit Txdp is sent to the first filter 6, and transmission that has passed through the first filter 6 The signals are multiplexed by the diplexer 2 and transmitted from the antenna 1. At the time of reception, the received signal received from the antenna 1 is demultiplexed by the diplexer 2, and the received signal from the antenna 1 is sent to the first filter 6 on the DCS and PCS side and received by the first high frequency switch 3. The reception signal that has passed through the first filter 6 with the unit side turned on is sent to the second high-frequency switch 4, and the second high-frequency switch 4 connects the DCS reception unit Rxd with the second high-frequency switch 4. The passed reception signal is sent to the reception unit Rxd of the DCS. In addition, when using PCS, it transmits / receives by the same operation | movement.

  Next, the case of GSM will be described. At the time of transmission, the transmission unit Txg is connected by the third high frequency switch 5, the transmission signal from the transmission unit Txg is sent to the second filter 7, and the transmission signal that has passed through the second filter 7 is transmitted to the diplexer 2. Are combined and transmitted from the antenna 1. At the time of reception, the reception signal received from the antenna 1 is demultiplexed by the diplexer 2, the reception signal from the antenna 1 is sent to the second filter 7 on the GSM side, and the reception unit Rxg is received by the third high frequency switch 5. And the received signal that has passed through the second filter 7 is sent to the receiver Rxg.

  However, according to the triple-band mobile phone which is one of the conventional mobile communication devices described above, since the first and second communication systems having close frequencies have two high-frequency switches, There is a problem that insertion loss of two high-frequency switches occurs in the portion, and the insertion loss increases.

  In addition, the area occupied by the high-frequency switch is increased, the circuit board is increased in size, and as a result, the triple-band mobile phone (mobile communication device) is increased in size.

  The present invention has been made to solve such problems, and provides a composite high-frequency component capable of reducing insertion loss and miniaturizing a circuit, and a mobile communication device using the same. With the goal.

  In order to solve the above-described problems, the high-frequency switch of the present invention includes a first port connected to the antenna, a second port connected to the transmission unit, a third port connected to the first reception unit, A fourth port connected to the second receiver; and a control terminal; a diode is connected between the first port and the second port; the first port and the third port; An inductor is connected between the first port and the fourth port, and another diode is connected between one end of the inductor on the third port side and the ground, and the first port and the fourth port In addition, another diode is connected, and the voltage applied to the control terminal is controlled to switch the first port to one of the second to fourth ports. Features.

  The composite high frequency component of the present invention is characterized in that a filter is connected to either the first port or the second port of the high frequency switch of the present invention.

  The composite high-frequency component of the present invention further includes a diplexer, and the high-frequency switch, the filter, and the diplexer are integrated with a ceramic multilayer substrate formed by laminating a plurality of sheet layers.

  The mobile communication device of the present invention is characterized by using the above-described high-frequency switch or composite high-frequency component.

  According to the composite high-frequency component of the present invention, the high-frequency component includes two high-frequency switches, a first high-frequency switch having four ports and a second high-frequency switch having three ports. Only the first high-frequency switch is provided in the reception path of the second communication system, and as a result, the insertion loss of the reception unit can be reduced.

  According to the mobile communication device of the present invention, since the composite high frequency component that reduces the insertion loss of the receiving unit is used, the characteristics of the front end unit corresponding to the three communication systems can be improved.

  According to the composite high-frequency component of the present invention, the high-frequency component includes two high-frequency switches, a first high-frequency switch having four ports and a second high-frequency switch having three ports. Only the first high-frequency switch is provided in the reception path of the second communication system, and as a result, the insertion loss of the reception unit can be reduced.

  In addition, since the two high-frequency switches constituting the composite high-frequency component can be configured with five diodes, the composite high-frequency component can be reduced in size and cost.

  According to the composite high-frequency component of the present invention, the first high-frequency switch is turned on / off by the first to third control power supplies, and the second high-frequency switch is turned on / off by the fourth and fifth control power supplies. Therefore, at the time of transmission of the first and second communication systems having close frequencies, all three diodes constituting the first high-frequency switch having four ports are turned on. As a result, the harmonics of the composite high-frequency component are turned on. Wave distortion can be reduced.

  According to the composite high frequency component of the present invention, the first high frequency switch is turned on / off by the first and second control power supplies, and the second high frequency switch is turned on / off by the third control power supply. The first high-frequency switch includes the first and second communication systems at the time of reception by one of the first and second communication systems following the first high-frequency switch and the third communication system following the second high-frequency switch. The applied voltage applied to the second control power supply and the third control power supply included in the second high-frequency switch becomes 0 V, and as a result, the current consumption of the composite high-frequency component can be reduced.

According to the composite high-frequency component of the present invention, since at least one of the first and second filters is arranged on the transmission unit side of the subsequent stage of the high-frequency switch, the distortion of the transmission signal by the high-power amplifier configured in the transmission unit is attenuated. Can be made.
Therefore, the insertion loss of the receiving unit can be improved.

  According to the composite high-frequency component of the present invention, the diplexer, the high-frequency switch, and the filter forming the composite high-frequency component are integrated with the ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics. The matching adjustment between the diplexer and the high-frequency switch and between the high-frequency switch and the filter need not be performed.

  Therefore, since the number of parts can be reduced, the circuit board for forming the microwave circuit having a plurality of signal paths can be downsized.

  According to the composite high frequency component of the present invention, the diplexer includes the first inductance element and the first capacitance element, and the first to third high frequency switches include the first and second switching elements, the second switching element, and the second switching element. Inductance element, composed of a second capacitance element, the first and second filters are composed of a third inductance element, a third capacitance element, they are built in or mounted on a ceramic multilayer substrate, Since the connection is made by connecting means formed inside the ceramic multilayer substrate, the composite high frequency component can be constituted by one ceramic multilayer substrate, and further miniaturization can be realized. In addition, loss due to wiring between components can be improved, and as a result, the overall loss of the composite high-frequency component can be improved.

  In addition, due to the wavelength shortening effect, it is possible to shorten the length of the stripline electrode serving as each inductance element, so that the insertion loss of these stripline electrodes can be improved. As a result, it is possible to reduce the size and loss of the composite high-frequency component.

  According to the mobile communication device of the present invention, since a small and low-loss composite high-frequency component is used, the mobile communication device on which the composite high-frequency component is mounted can be reduced in size and performance.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of a high-frequency switch and composite high-frequency component according to the present invention. A composite high-frequency component 10 constituting a part of a front end unit corresponding to DCS (1.8 GHz band), PCS (1.8 GHz band), and GSM (900 MHz band), which are the first to third communication systems, is a diplexer. 11 includes a first high-frequency switch 12 having four ports, a second high-frequency switch 13 having three ports, and first and second filters 14 and 15.

  The first port P11 of the diplexer 11 has the antenna 1, the second port P12 has the first port P41 of the first filter 14, and the third port P13 has the second filter 15 of the second filter 15. 1 port P51 is connected to each other.

  The first port P21 of the first high-frequency switch 12 is connected to the second port P42 of the first filter 14, and the DCS and PCS are connected to the second port P22 of the first high-frequency switch 12. The common transmitter Txdp is connected to the third port P23, and the DCS receiver Rxd is connected to the fourth port P24, and the PCS receiver Rxp is connected to the fourth port P24.

  Furthermore, the first port P31 of the second high-frequency switch 13 is connected to the second port P52 of the second filter 15, and the GSM transmitter Txg is connected to the second port P32 of the second high-frequency switch 13. However, the GSM receiving unit Rxg is connected to the third port P33.

  The diplexer 11 includes first inductors L11 and L12 that are first inductance elements, and first capacitors C11 to C15 that are first capacitance elements.

  The first capacitors C11 and C12 are connected in series between the first port P11 and the second port P12, and their connection point is grounded via the first inductor L11 and the first capacitor C13. The

  A parallel circuit composed of a first inductor L12 and a first capacitor C14 is connected between the first port P11 and the third port P13, and the third port P13 side of the parallel circuit is connected to the first port P11. It is grounded through a capacitor C15.

  The first high-frequency switch 12 includes first diodes D11 to D13 that are first switching elements, second inductors L21 to L25 that are second inductance elements, and a second capacitor that is a second capacitance element. It is composed of C21 to C25.

  The first diode D11 is connected between the first port P21 and the second port P22 such that the cathode is on the first port P21 side, and the second inductor L21 is connected to the first diode D11. And a second capacitor C21 are connected in parallel.

  The second port P22 side of the first diode D11, that is, the anode is grounded through the second inductor L22 and the second capacitor C22, and the connection point between the second inductor L22 and the second capacitor C22. Is provided with a first control terminal Vc1.

  Further, the second inductor L23 is connected between the first port P21 and the third port P23, and the third port P23 side of the second inductor L23 is the first diode D12 and the second capacitor C23. The second control terminal Vc2 is provided at the connection point between the cathode of the first diode D12 and the second capacitor C23.

  Further, the second inductor L24 is connected between the first port P21 and the fourth port P24, and the fourth port P24 side of the second inductor L24 is the first diode D13 and the second capacitor C24. The third control terminal Vc3 is provided at the connection point between the cathode of the first diode D13 and the second capacitor C24.

  Further, the first port P21 is grounded via the second inductor L25 and the second capacitor C25, and the connection point between the second inductor L25 and the second capacitor C25 is grounded via the resistor R. .

  The second high-frequency switch 13 includes second diodes D21 and D22 that are second switching elements, third inductors L31 to L33 that are third inductance elements, and a third capacitor that is a third capacitance element. It is comprised by C31-C33.

  The second diode D21 is connected between the first port P31 and the second port P32 so that the cathode is on the first port P31 side, and the second inductor D31 is connected to the second inductor D31. And a third capacitor C31 are connected in parallel.

  Further, the second port P32 side of the second diode D21, that is, the anode is grounded via the third inductor L32 and the third capacitor C32, and a connection point between the third inductor L32 and the third capacitor C32. Is provided with a fourth control terminal Vc4.

  Further, the third inductor L33 is connected between the first port P31 and the third port P33, and the third port L33 side of the third inductor L33 is the second diode D22 and the third capacitor C33. The fifth control terminal Vc5 is provided at the connection point between the cathode of the second diode D22 and the third capacitor C33.

  The first filter 14 includes a fourth inductor L41, which is a fourth inductance element, and fourth capacitors C41, C42, which are fourth capacitance elements.

  A fourth inductor L41 is connected in series between the first port P41 and the second port P42, and a fourth capacitor C41 is connected in parallel to the fourth inductor L41. The second port P42 side of the fourth inductor L41 is grounded via the fourth capacitor C42.

  The second filter 15 includes a fifth inductor L51, which is a fifth inductance element, and fifth capacitors C51, C52, which are fifth capacitance elements.

  A fifth inductor L51 is connected in series between the first port P51 and the second port P52, and a fifth capacitor C51 is connected in parallel to the fifth inductor L51. Further, the second port P52 side of the fifth inductor L51 is grounded via the fifth capacitor C52.

FIG. 2 is an exploded perspective view of a main part of the composite high-frequency component having the circuit configuration of FIG.
The composite high frequency component 10 includes a ceramic multilayer substrate 16, which is not shown, but includes first inductors L <b> 11 and L <b> 12, first capacitors C <b> 11 to C <b> 15, and first capacitors that are not shown. The second inductors L21, L23 to L25 of the high-frequency switch 12, the second capacitors C21, C22, C25, the third inductors L31, L33 of the second high-frequency switch 13, the third capacitors C31, C32, the first A fourth inductor L41, fourth capacitors C41, C42 constituting the filter 14 and a fifth inductor L51, fifth capacitors C51, C52 constituting the second filter 15 are incorporated therein.

  Further, on the surface of the ceramic multilayer substrate 16, the first diodes D11 to D13, the second inductor L22, the second capacitors C23 and C24, and the second high frequency components constituting the first high frequency switch 12 made of chip parts. Second diodes D21 and D22, a third inductor L32, and a third capacitor C33 constituting the switch 13 are mounted.

  Further, twelve external terminals Ta to Tl are formed by screen printing or the like from the side surface to the bottom surface of the ceramic multilayer substrate 16. Among these external terminals Ta to Tl, five external terminals Ta to Te are on one long side of the ceramic multilayer substrate 11, and five external terminals Tg to Tk are the other long side of the ceramic multilayer substrate 11, and the remaining The two external terminals Tf and Tl are formed on each side of the opposing short sides of the ceramic multilayer substrate 11 by screen printing or the like.

  The external terminals Ta to Tl are respectively connected to the port P11 of the diplexer 11, the second and third ports P22, P23, P32, P33 of the first and second high-frequency switches 12 and 13, and the first and second ports. The first to fifth control terminals Vc1, Vc2, Vc3, Vc4, and Vc5 of the high-frequency switches 12 and 13 and the ground terminal.

  A metal cap 17 is placed on the ceramic multilayer substrate 16 so as to cover the surface of the ceramic multilayer substrate 16. At this time, the metal cap 17 is connected to the external terminals Tf and Tl serving as ground terminals provided on the opposite short sides of the multilayer multilayer substrate 16.

Here, the operation of the composite high-frequency component 10 having the circuit configuration of FIG. 1 will be described.
First, when transmitting a DCS or PCS (1.8 GHz band) transmission signal, the first high-frequency switch 12 uses 1V for the first control terminal Vc1, 1V for the second control terminal Vc2, By applying 1 V to the control terminal Vc3 of the first and connecting the first port P21 and the second port P22 of the first high-frequency switch 12, the DCS or PCS transmission signal is transmitted to the first high-frequency switch 12, The signal passes through the first filter 14 and the diplexer 11 and is transmitted from the antenna 1. At this time, the first filter 14 passes the DCS and PCS transmission signals to attenuate the second harmonic and the third harmonic.

  In the second high frequency switch 13, 0 V is applied to the fourth control terminal Vc 4 and 1 V is applied to the fifth control terminal Vc 5 to cut off the second high frequency switch 13.

  Next, when transmitting a GSM (900 MHz band) transmission signal, the second high-frequency switch 13 applies 1 V to the fourth control terminal Vc4 and 0 V to the fifth control terminal Vc5, respectively. By connecting the first port P31 and the second port P32 of the high frequency switch 13, the GSM transmission signal passes through the second high frequency switch 13, the second filter 15, and the diplexer 11, and is transmitted from the antenna 1. Is done. At this time, the second filter 15 passes the GSM transmission signal and attenuates the third harmonic.

  In the first high frequency switch 12, 0 V is applied to the first control terminal Vc 1, 0 V is applied to the second control terminal Vc 2, and 0 V is applied to the third control terminal Vc 3 to cut off the first high frequency switch 12. is doing.

  Next, when receiving a DCS reception signal, the first high-frequency switch 12 has 0V at the first control terminal Vc1, 0V at the second control terminal Vc2, and 1V at the third control terminal Vc3. By applying and connecting the first port P21 and the third port P23 of the first high-frequency switch 12, the DCS received signal received from the antenna 1 is converted into the diplexer 11, the first filter 14, and the first filter 14. 1 is sent to the DCS receiver Rxd. At this time, the first filter 14 passes the DCS reception signal to attenuate the second harmonic and the third harmonic.

  In the second high frequency switch 13, 0 V is applied to the fourth control terminal Vc 4 and 1 V is applied to the fifth control terminal Vc 5 to shut off the second high frequency switch 14.

  Next, when receiving a PCS reception signal, the first high-frequency switch 12 has 0V at the first control terminal Vc1, 1V at the second control terminal Vc2, and 0V at the third control terminal Vc3. By applying and connecting the first port P21 and the fourth port P24 of the first high-frequency switch 12, the received signal of the PCS received from the antenna 1 becomes the diplexer 11, the first filter 14, the first The high-frequency switch 12 is sent to the PCS receiver Rxp. At this time, the first filter 14 passes the PCS reception signal and attenuates the second harmonic and the third harmonic.

  In the second high frequency switch 13, 0 V is applied to the fourth control terminal Vc 4 and 1 V is applied to the fifth control terminal Vc 5 to cut off the second high frequency switch 13.

  Next, when receiving a GSM reception signal, the second high frequency switch 13 applies 0 V to the fourth control terminal Vc4 and 1 V to the fifth control terminal Vc5, respectively. By connecting the first port P31 and the third port P33, the GSM reception signal received from the antenna 1 passes through the diplexer 11, the second filter 15, and the second high-frequency switch 13, and the GSM To the receiver Rxg. At this time, the second filter 15 passes the GSM reception signal and attenuates the third harmonic.

  In the first high frequency switch 12, 0 V is applied to the first control terminal Vc 1, 0 V is applied to the second control terminal Vc 2, and 0 V is applied to the third control terminal Vc 3 to cut off the first high frequency switch 12. is doing.

  According to the composite high-frequency component of the first embodiment described above, since it is composed of two high-frequency switches, a first high-frequency switch having four ports and a second high-frequency switch having three ports, the frequencies close to each other Only the first high-frequency switch is provided in the reception path of the first and second communication systems including the above, and as a result, the insertion loss of the reception unit can be reduced.

  In addition, since the two high-frequency switches constituting the composite high-frequency component can be configured with five diodes, the composite high-frequency component can be reduced in size and cost.

  Further, since the first high-frequency switch is turned on / off by the first to third control power supplies and the second high-frequency switch is turned on / off by the fourth and fifth control power supplies, the adjacent frequencies are controlled. When transmitting the DCS and PCS provided, all three diodes constituting the first high-frequency switch having four ports are turned on, and as a result, the harmonic distortion of the composite high-frequency component can be reduced.

  In addition, in order to integrate the diplexer, the first and second high-frequency switches, and the first and second filters forming the composite high-frequency component into a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers, The matching characteristics, attenuation characteristics, or isolation characteristics of the components can be ensured, and accordingly, a matching circuit between the diplexer and the first and second high-frequency switches becomes unnecessary.

  Therefore, the composite high frequency component can be miniaturized. Incidentally, the diplexer, the first and second high frequency switches, and the first and second filters can be integrated into a ceramic multilayer substrate having a size of 6.3 mm × 5 mm × 2 mm.

  Further, the diplexer includes a first inductor and a first capacitor, the first high-frequency switch includes a first diode, a second inductor, and a second capacitor, and the second high-frequency switch includes: The second filter is composed of a second diode, a third inductor, and a third capacitor. The first filter is composed of a fourth inductor and a fourth capacitor. The second filter is composed of a fifth inductor and a fifth capacitor. The capacitor is built in or mounted on the ceramic multilayer substrate and connected by connecting means formed inside the ceramic multilayer substrate, so that the composite high-frequency component can be configured with one ceramic multilayer substrate, Miniaturization can be realized. In addition, loss due to wiring between components can be improved, and as a result, the overall loss of the composite high-frequency component can be improved.

  Moreover, since the length of the stripline electrodes serving as the first to fifth inductors can be shortened due to the wavelength shortening effect, the insertion loss of these stripline electrodes can be improved. As a result, it is possible to reduce the size and loss of the composite high-frequency component.

  FIG. 3 is a circuit diagram of a second embodiment of the high-frequency switch and composite high-frequency component of the present invention. The composite high frequency component 20 includes a diplexer 11, first and second high frequency switches 12 and 13, and first and second filters 14 and 15.

  Among these, the configuration of the diplexer 11 and the first and second filters 14 and 15 are the same as those of the composite high-frequency component 10 of the first embodiment of FIG. 1, and detailed description thereof is omitted.

  The first high-frequency switch 12 includes first diodes D11 to D13 that are first switching elements, second inductors L21 to L25 that are second inductance elements, and a second capacitor that is a second capacitance element. It is composed of C21 to C25.

  The first diode D11 is connected between the first port P21 and the second port P22 such that the cathode is on the first port P21 side, and the second inductor L21 is connected to the first diode D11. And a second capacitor C21 are connected in parallel.

  The second port P22 side of the first diode D11, that is, the anode is grounded through the second inductor L22 and the second capacitor C22, and the connection point between the second inductor L22 and the second capacitor C22. Is provided with a first control terminal Vc1.

  Further, the second inductor L23 is connected between the first port P21 and the third port P23, and the third port P23 side of the second inductor L23 is the first diode D12 and the second capacitor C23. The connection point between the cathode of the first diode D12 and the second capacitor C23 is grounded via a resistor R.

  The first diode D13 is connected between the first port P21 and the fourth port P24 so that the cathode is on the first port P21 side, and the second inductor L24 is connected to the first diode D13. And a second capacitor C24 are connected in parallel.

  The fourth port P24 side of the first diode D13, that is, the anode is grounded via the second inductor L25 and the second capacitor C25, and the connection point between the second inductor L25 and the second capacitor C25. Is provided with a second control terminal Vc2.

  The second high-frequency switch 13 includes second diodes D21 and D22 that are second switching elements, third inductors L31 to L33 that are third inductance elements, and a third capacitor that is a third capacitance element. It is comprised by C31-C33.

  The second diode D21 is connected between the first port P31 and the second port P32 so that the cathode is on the first port P31 side, and the second inductor D31 is connected to the second inductor D31. And a third capacitor C31 are connected in parallel.

  Further, the second port P32 side of the second diode D21, that is, the anode is grounded via the third inductor L32 and the third capacitor C32, and a connection point between the third inductor L32 and the third capacitor C32. Is provided with a third control terminal Vc3.

  Further, the third inductor L33 is connected between the first port P31 and the third port P33, and the third port L33 side of the third inductor L33 is the second diode D22 and the third capacitor C33. The connection point between the cathode of the second diode D22 and the third capacitor C33 is grounded via a resistor R.

  Here, the operation of the composite high-frequency component 20 having the circuit configuration of FIG. 3 will be described. First, when transmitting a transmission signal of DCS or PCS (1.8 GHz band), 1 V is applied to the first control terminal Vc1 and 0 V is applied to the second control terminal Vc2 in the first high-frequency switch 12, respectively. By connecting the first port P21 and the second port P22 of the first high-frequency switch 12, the DCS or PCS transmission signal passes through the first high-frequency switch 12, the first filter 14, and the diplexer 11. And transmitted from the antenna 1. At this time, the first filter 14 passes the DCS and PCS transmission signals to attenuate the second harmonic and the third harmonic.

  In the second high frequency switch 13, 0 V is applied to the third control terminal Vc 3 to shut off the second high frequency switch 13.

  Next, when transmitting a GSM (900 MHz band) transmission signal, 1 V is applied to the third control terminal Vc3 in the second high frequency switch 13 and the first port P31 of the second high frequency switch 13 and the second By connecting the second port P32, a GSM transmission signal passes through the second high-frequency switch 13, the second filter 15, and the diplexer 11, and is transmitted from the antenna 1. At this time, the second filter 15 passes the GSM transmission signal and attenuates the third harmonic.

  In the first high-frequency switch 12, 0V is applied to the first control terminal Vc1 and 0V is applied to the second control terminal Vc2, respectively, thereby blocking the first high-frequency switch 12.

  Next, when receiving a DCS reception signal, the first high-frequency switch 12 applies 0 V to the first control terminal Vc1 and 0 V to the second control terminal Vc2, respectively. By connecting the first port P21 and the third port P23, a DCS reception signal received from the antenna 1 passes through the diplexer 11, the first filter 14, and the first high-frequency switch 12, and the DCS. To the receiver Rxd. At this time, the first filter 14 passes the DCS reception signal to attenuate the second harmonic and the third harmonic.

  In the second high frequency switch 13, 0 V is applied to the third control terminal Vc 3 to shut off the second high frequency switch 13.

  Next, when receiving a PCS reception signal, the first high-frequency switch 12 applies 0 V to the first control terminal Vc1 and 1 V to the second control terminal Vc2, respectively. By connecting the first port P21 and the fourth port P24, the reception signal of the PCS received from the antenna 1 passes through the diplexer 11, the first filter 14, and the first high-frequency switch 12, and the PCS It is sent to the receiving unit Rxp. At this time, the first filter 14 passes the PCS reception signal and attenuates the second harmonic and the third harmonic.

  In the second high frequency switch 13, 0 V is applied to the third control terminal Vc 3 to shut off the third high frequency switch 13.

  Next, in the case of receiving a GSM reception signal, 0 V is applied to the third control terminal Vc3 in the second high frequency switch 13, and the first port P31 and the third port P33 of the second high frequency switch 13 are applied. , The GSM reception signal received from the antenna 1 passes through the diplexer 11, the second filter 15, and the second high-frequency switch 13, and is sent to the GSM reception unit Rxg. At this time, the second filter 15 passes the GSM reception signal and attenuates the third harmonic.

  In the first high-frequency switch 12, 0V is applied to the first control terminal Vc1 and 0V is applied to the second control terminal Vc2, respectively, thereby blocking the first high-frequency switch 12.

  According to the composite high frequency component of the second embodiment described above, the first high frequency switch is turned on / off by the first and second control power supplies, and the second high frequency switch is turned on / off by the third control power supply. Therefore, when receiving the DCS downstream of the first high-frequency switch and the GSM downstream of the second high-frequency switch, the first and second control power sources included in the first high-frequency switch, and the second The applied voltage applied to the third control power supply included in the high frequency switch becomes 0 V, and as a result, the current consumption of the composite high frequency component can be reduced.

  FIG. 4 is a block diagram of a third embodiment of the composite high frequency component of the present invention. The composite high frequency component 30 is different in the arrangement position of the first and second filters 14 and 15 compared to the composite high frequency component 10 (FIG. 1) of the first embodiment.

  That is, the first filter 14 is on the DCS and PCS common transmission unit Txdp side, which is the subsequent transmission unit side of the first high-frequency switch 12, and the second filter 15 is the transmission unit on the subsequent stage of the second high-frequency switch 13. And the GSM transmitter Txg, which is the part side.

  According to the composite high-frequency component of the third embodiment described above, the filter is disposed on the transmission unit side after the high-frequency switch, that is, between the high-frequency switch and the transmission unit. The distortion of the high power amplifier can be attenuated by this filter. Therefore, insertion loss on the receiving side can be improved.

  FIG. 5 is a block diagram showing a part of the configuration of a triple band mobile phone which is a mobile communication device, and shows an example of a combination of 1.8 GHz band DCS and PCS and 900 MHz band GSM. is there. The triple band mobile phone 40 includes the antenna 1 and the composite high frequency component 10 (FIG. 1).

  The antenna 1 is provided at the port P11 of the composite high-frequency component 10, the transmitters Txdp common to the DCS and PCS are provided at the ports P22, P23, P24, P32, and P33, the receiver Rxp of the PCS, the receiver Rxd of the DCS, A GSM transmission unit Txg and a GSM reception unit Rxg are connected to each other.

  According to the above-described triple-band mobile phone, since a small and low-loss composite high-frequency component is used, it is possible to achieve downsizing and high performance of a mobile communication device equipped with this composite high-frequency component.

  The same effect can be obtained even if the composite high-frequency components 20 and 30 (FIGS. 2 and 3) are used as the composite high-frequency component 10.

It is a circuit diagram of the 1st example concerning a composite high frequency component of the present invention. It is a principal part disassembled perspective view of the composite high frequency component of FIG. It is a circuit diagram of the 2nd example concerning a composite high frequency component of the present invention. It is a block diagram of the 3rd example concerning compound high frequency parts of the present invention. It is a block diagram which shows a part of structure of the mobile communication apparatus using the composite high frequency component of FIG. It is a block diagram which shows the structure of the front end part of a general triple band portable telephone (mobile communication apparatus).

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Diplexer 12, 13 1st, 2nd high frequency switch 14, 15 1st, 2nd filter 16 Ceramic multilayer substrate 40 Mobile communication apparatus (triple band portable telephone)
C11 to C15, C21 to C25, C31 to C33, C41, C42, C51, C52 First to fifth capacitance elements D11 to D13, D21, D22 First and second switching elements L11, L12, L21 to L25, L31 to L33, L41, L51 1st to 5th inductor elements Txdp, Txg transmitter Rxd, Rxp, Rxg receiver

Claims (4)

A first port connected to the antenna, a second port connected to the transmitter, a third port connected to the first receiver, a fourth port connected to the second receiver, and A control terminal; a diode is connected between the first port and the second port; an inductor is connected between the first port and the third port; Another diode is connected between one end on the third port side and the ground, and another diode is connected between the first port and the fourth port, A high-frequency switch, wherein the first port is switched to one of the second to fourth ports by controlling a voltage applied to the control terminal. A composite high frequency component comprising a filter connected to either the first port or the second port of the high frequency switch according to claim 1. The composite high-frequency component according to claim 2, further comprising a diplexer, wherein the high-frequency switch, the filter, and the diplexer are integrated with a ceramic multilayer substrate formed by laminating a plurality of sheet layers. A mobile communication device comprising the high-frequency switch according to claim 1 or the composite high-frequency component according to claim 2.