JP2000201097A - Composite high frequency part and communication device for traveling object using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make this device compact by integrating a diplexer for selecting a received signal to plural signal paths during reception, plural high frequency switches for separating each of the plural signal paths into a transmitting part and a receiving part, and plural filters connected in the signal paths on a ceramic multi-layer substrate formed by laminating plural sheet layers made of ceramics. SOLUTION: In a composite high frequency part 10, a diplexer, notch filter, and one part of high frequency switch circuits in a DCS system and a GSM system are incorporated in a ceramic multi-layer substrate 11, and switching elements D1d and D2d and D1g and D2g constituting high frequency switches in the DCS system and the GSM system which are constituted of chip parts, second inductor elements L22d and L22g, second capacitance elements C23d and C23g, and resistances Rd and Rg are loaded on the surface. Outer terminals Ta-T1 are formed by screen printing or the like from the side face to bottom face of the ceramic multi-layer substrate 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite high frequency component and a mobile communication device using the same, and more particularly to a composite high frequency component usable for a plurality of different mobile communication systems and a mobile communication device using the same. About.

[0002]

2. Description of the Related Art Currently, in Europe, as mobile communication devices, a DCS (Digital Cellular System) using a plurality of frequency bands, for example, a 1.8 GHz band, and a 900 MHZ are used.
GSM (Global System for Mobile comm using z-band)
A dual-band mobile phone capable of operating with the unications) has been proposed.

FIG. 7 is a block diagram showing a part of the configuration of a general dual-band portable telephone, and is 1.8 GHz.
An example is shown in which DCS in the band and GSM in the 900 MHz band are combined. The dual-band mobile phone includes an antenna 1, a diplexer 2, and two signal paths DCS system 3 and GSM system 4.

[0004] The diplexer 2 has a role of selecting a transmission signal from the DCS system 3 or the GSM system 4 at the time of transmission, and a function of selecting a reception signal to the DCS system 3 or the GSM system 4 at the time of reception. The DCS system 3 includes a high-frequency switch 3a that separates a transmission unit Txd and a reception unit Rxd, a notch filter 3b that is a filter that passes a fundamental wave of the DCS and attenuates a second harmonic and a third harmonic. The GSM system 4 includes a high-frequency switch 4a that separates the signal into a transmitting unit Txg and a receiving unit Rxg, and a notch filter 4b that is a filter that passes a fundamental wave of GSM and attenuates a third harmonic.

Here, the operation of the dual-band portable telephone will be described with reference to an example in which the DCS system 3 is used. At the time of transmission, the transmitting unit Tx
When d is turned on, the transmission signal from the transmission unit Txd is sent to the notch filter 3b, and the transmission signal passing through the notch filter 3b is multiplexed by the diplexer 2 and transmitted from the antenna 1. On the other hand, at the time of reception, the received signal received from the antenna 1 is split by the diplexer 2, the received signal from the antenna 1 is sent to the notch filter 3b, and the high-frequency switch 3a
Turns on the receiving unit Rxd to send the received signal that has passed through the notch filter 3b to the receiving unit Rxd. It should be noted that transmission and reception are performed by the same operation when the GSM system 4 is used.

[0006]

However, according to the dual-band portable telephone set as one of the above-mentioned conventional mobile communication apparatuses, an antenna, a diplexer, a DCS system,
The high frequency switch and the notch filter that constitute the GSM system are discretely mounted one by one on the circuit board. Therefore, in order to ensure matching characteristics, attenuation characteristics, or isolation characteristics, the distance between the diplexer and the high frequency switch is reduced. Need to add a matching circuit. For this reason, there has been a problem that the circuit board becomes large due to the increase in the number of components and the mounting area accompanying it, and as a result, the dual-band mobile phone (mobile communication device) becomes large.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is an object of the present invention to provide a composite high-frequency component which does not require a matching circuit and which can reduce the size of a circuit, and a mobile communication device using the same. The purpose is to provide.

[0008]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a composite high-frequency component according to the present invention is a composite high-frequency component constituting a part of a microwave circuit having a plurality of signal paths corresponding to respective frequencies. A diplexer that combines transmission signals from the plurality of signal paths during transmission and distributes a reception signal to the plurality of signal paths during reception; and a transmitting unit that transmits each of the plurality of signal paths. And a plurality of high-frequency switches separated into a receiving unit, and a plurality of filters connected in the signal path, and integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers. Features.

[0009] Further, the plurality of filters are connected to the transmission unit side at a stage subsequent to the plurality of high frequency switches.

Further, the plurality of filters are notch filters.

Further, the diplexer includes a first inductance element and a first capacitance element, and the plurality of high frequency switches include a switching element,
A plurality of filters each including a third inductance element and a third capacitance element, wherein the plurality of filters include a third inductance element and a third capacitance element; Wherein the inductance element and the first to third capacitance elements are built in or mounted on the ceramic multilayer substrate, and are connected by connection means formed inside the ceramic multilayer substrate.

Further, the second inductance element constituting the plurality of high-frequency switches includes a parallel trap coil and a choke coil, and the parallel trap coil and the choke coil are chip coils.

A mobile communication device according to the present invention is characterized by using the above-described composite high-frequency component.

According to the composite high-frequency component of the present invention, the diplexer, the high-frequency switch and the filter, which constitute the composite high-frequency component, are integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers. Adjustment adjustment with the switch becomes easy,
There is no need for a matching circuit for adjusting the matching between the diplexer and the high-frequency switch.

According to the mobile communication device of the present invention, since a composite high-frequency component that does not require a matching circuit is used, a circuit board that forms a microwave circuit having a plurality of signal paths is reduced in size.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of the composite high-frequency component of the present invention. The composite high-frequency component 10 includes a diplexer 2, a high-frequency switch 3a forming a DCS system 3, a notch filter 3b, and a GS shown in the block diagram of FIG.
High frequency switch 4a and notch filter 4b forming M system 4
Consists of

The first port P of the diplexer 2
11 has an antenna 1 and a second port P12 has a DCS
The first port P31d of the notch filter 3b of the system 3 is
The third port P13 has a GSM system 4 notch filter 4
b are connected to the first ports P31g, respectively.

In the DCS system 3, the high frequency switch 3a is connected to the second port P32d of the notch filter 3b.
Is connected to the first port P21d of the high-frequency switch 3
The transmitting unit Txd is connected to the second port P22d, and the receiving unit Rxd is connected to the third port P23d.

Further, in the GSM system 4, the high frequency switch 4 is connected to the second port P32g of the notch filter 4b.
The first port P21g of the high frequency switch 4a is connected to the transmitting unit Txg, and the second port P22g of the high frequency switch 4a is
The receiving unit Rxg is connected to the port P23g.

The diplexer 2 includes first inductors L11 and L12, which are first inductance elements, and first inductors L11 and L12.
The first capacitors C11 to C11 which are the capacitance elements
C15.

The first capacitors C11 and C12 are connected in series between the first port P11 and the second port P12, and their connection point is connected to the first inductor L11.
And via a first capacitor C13.

Further, a parallel circuit including a first inductor L12 and a first capacitor C14 is connected between the first port P11 and the third port P13, and the third port P13 side of the parallel circuit is connected. Grounded via a first capacitor C15.

That is, the diplexer 2 has a high-pass filter between the first port P11 and the second port P12 and a notch filter between the first port P11 and the third port P13. Configuration.

The high-frequency switch 3a (4a) includes diodes D1d, D2d (D1g, D
2g), second inductors L21d to L23d (L21g to L23g) serving as second inductance elements, and a second capacitor C2 serving as a second capacitance element
1d to C23d (C21g to C23g).
The second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L2g
2g) is a choke coil.

Then, the first port P21d (P21
g) and the second port P22d (P22g), a diode D1d (D1g) is connected such that the cathode is on the first port P21d (P21g) side, and a second inductor is connected to the diode D1d (D1g). L21d (L2
1g) and a second capacitor C21d (C21g) are connected in parallel.

The second diode D1d (D1g)
P22d (P22g) side, that is, the anode is grounded via a second inductor L22d (L22g) and a second capacitor C22d (C22g), and the second inductor L22d (L22g) and the second capacitor C
22d (C22g) and a control terminal Vc1 (Vc
2) is connected.

Further, the first port P21d (P21
g) and the third port P23d (P23g)
L23d (L23g) is connected to the third port P23 of the second inductor L23d (L23g).
The d (P23g) side is grounded via a diode D2d (D2g) and a second capacitor C23d (C23g), and the connection point between the cathode of the diode D2d (D2g) and the second capacitor C23d (C23g) is a resistor Rd
(Rg) to ground.

The notch filter 3b (4b) includes a third inductor L31d (L
31g) and third capacitors C31d and C32d (C31g and C32g), which are third capacitance elements.
It consists of.

Then, the first port P31d (P31d
g) and the second port P32d (P32g)
, And a third capacitor C31d (C31g) is connected in parallel to the third inductor L31d (L31g).

The third inductor L31d (L31d
g) on the second port P32d (P32g) side is grounded via a third capacitor C32d (C32g).

FIG. 2 is a perspective view of a composite high-frequency component having the circuit configuration of FIG. The composite high-frequency component 10 includes a ceramic multilayer substrate 11,
Although not shown, the diplexer 2 in FIG.
, The first and second inductors L11 and L12, the first capacitors C11 to C15, the high-frequency switch 3a of the DCS system 3, and the second and third inductors L21d, L23d, L31d, and the second and third inductors forming the notch filter 3b. 3
Capacitors C21d, C22d, C31d, C32
d and the second and third inductors L2 forming the high-frequency switch 4a and the notch filter 4b of the GSM system 4.
1g, L23g, L31g, and second and third capacitors C21g, C22g, C31g, C32g are respectively built-in.

On the surface of the ceramic multilayer substrate 11, a high frequency switch 3 of DCS system 3 composed of chip components is provided.
a, D2d, D2d, second inductor (choke coil) L22d, and second capacitor C
23d, a resistor Rd, and diodes D1g and D2g, a second inductor (choke coil) L22g, a second capacitor C23g, and a resistor Rg which constitute the high-frequency switch 4a of the GSM system 4 are respectively mounted.

Further, twelve external terminals Ta to Tl are formed by screen printing or the like from the side surface to the bottom surface of the ceramic multilayer substrate 11. Of these external terminals Ta to Tl, five external terminals Ta to Te are on one long side of the ceramic multilayer substrate 11 and five external terminals Tg to Tg.
Tk is the other long side of the ceramic multilayer substrate 11 and the remaining 2
The external terminals Tf and Tl are formed on the respective opposite short sides of the ceramic multilayer substrate 11 by screen printing or the like.

The external terminals Ta to Tl are connected to the first port P11 of the diplexer 2 and the second and third ports P22d and P23 of the high-frequency switches 3a and 4a, respectively.
d, P22g and P23g, the control terminals Vc1 and Vc2 of the high frequency switches 3a and 4a, and the ground.

On the ceramic multilayer substrate 11, diodes D1d, D2d, D1g, D2g, second inductors L22d, L22g, second capacitors C23d,
The metal cap 12 is covered so as to cover C23g and the resistors Rd and Rg.

FIGS. 3 (a) to 3 (h) and FIGS. 4 (a) to 4 (f) are a top view and a bottom view of each sheet layer constituting the ceramic multilayer substrate of the composite high-frequency component of FIG. It is. The ceramic multilayer substrate 11 is made of a first ceramic made mainly of barium oxide, aluminum oxide, and silica.
To the thirteenth sheet layers 11a to 11m are sequentially laminated from above and fired at a firing temperature of 1000 ° C. or lower.

On the upper surface of the first sheet layer 11a, diodes D1d, D2d, D1g, D2g mounted on the surface of the ceramic multilayer substrate 11, second inductors L22d, L22g, and second capacitors C23d, C
Land La for mounting 23g and resistors Rd and Rg
Is formed by screen printing or the like.

The third and tenth sheet layers 11c, 11c,
Strip line electrodes SL1 to SL8 made of a conductor layer are printed and formed on the upper surface of 11j by screen printing or the like. Further, the fourth to eighth and twelfth sheet layers 1
On the upper surfaces of 1d to 11h and 11l, capacitor electrodes Cp1 to Cp18 formed of a conductor layer are formed by printing by screen printing or the like.

On the upper surfaces of the seventh, ninth, eleventh, and thirteenth sheet layers 11g, 11i, 11k, and 11m, ground electrodes G1 to G4 made of a conductor layer are formed by screen printing or the like. You. Further, external terminals Ta to T are provided on the lower surface of the thirteenth sheet layer 11m (FIG. 4F).
1 is printed and formed by screen printing or the like.

The first to eleventh sheet layers 11a to 11a
1k, at a predetermined position, the land La, the strip line electrodes SL1 to SL8, the strip line electrodes SL1 to SL8.
Via holes VHa to VHk for connecting SL8 and ground electrodes G1 to G4 are provided.

At this time, the first inductors L11 and L12 of the diplexer 2 are connected to the strip line electrodes SL6 and SL.
7 is formed. Also, the high frequency switch 3 of the DCS system 3
The second inductor L21d and L23d of a are formed by the strip line electrodes SL2 and SL4, and the third inductor L31d of the notch filter 3b of the DCS system 3 is formed by the strip line electrode SL8.

Further, the high frequency switch 4a of the GSM system 4
Are formed by the strip line electrodes SL1 and SL3, and the third inductor L31g of the notch filter 4b of the GSM system 4 is formed by the strip line electrode SL5.

The first capacitor C11 of the diplexer 2 is connected to the capacitor electrodes Cp6 and Cp9, and the first capacitor C12 is connected to the capacitor electrodes Cp3 and Cp6.
Is formed by the capacitor electrode Cp17 and the ground electrode G4, the first capacitor C14 is formed by the capacitor electrodes Cp9 and Cp11, and the first capacitor C15 is formed by the capacitor electrode Cp16 and the ground electrode G4.

Further, the high frequency switch 3a of the DCS system 3
Is connected to the capacitor electrodes Cp5 and Cp5.
At Cp8, a second capacitor C22d is formed by the capacitor electrode Cp13 and the ground electrode G2. The third capacitor C31d of the notch filter 3b of the DCS system 3 is connected to the capacitor electrodes Cp8 and Cp12.
The third capacitor C32d is connected to the capacitor electrode Cp1.
8 and the ground electrode G4.

The second capacitor C21g of the high-frequency switch 4a of the GSM system 4 is connected to the capacitor electrodes Cp4 and Cp4.
At p7, the second capacitor C22g is connected to the capacitor electrode C
p13 and the ground electrode G2 are formed respectively.
Further, the third capacitor C31g of the notch filter 4b of the GSM system 4 is formed by the capacitor electrodes Cp7 and Cp10, and the third capacitor C32g is formed by the capacitor electrode Cp15 and the ground electrode G4.

Here, the operation of the composite high frequency component 10 having the circuit configuration of FIG. 1 will be described. First, DCS system 3
(1.8 GHz band) when transmitting a transmission signal,
In the high frequency switch 3a of the CS system 3, the control terminal Vc1
Is turned on to turn on the diodes D1d and D2d, so that the transmission signal of the DCS system 3
a, passing through the notch filter 3b and the diplexer 2,
It is transmitted from the antenna 1 connected to the first port P11 of the diplexer 2.

At this time, the high-frequency switch 4a of the GSM system 4
0V is applied to the control terminal Vc2 at
By turning off 1g, the transmission signal of the GSM system 4 is prevented from being transmitted. Further, by connecting the diplexer 2, the transmission signal of the DCS system 3 is
Of the transmission unit Txg and the reception unit Rxg. Further, the notch filter 3b of the DCS system 3 attenuates the second and third harmonics of the DCS system 3.

Next, when transmitting a transmission signal of the GSM system 4 (900 MHz band), 3 V is applied to the control terminal Vc2 in the high-frequency switch 4a of the GSM system 4 to turn on the diodes D1g and D2g. The transmission signal of the system 4 is a high frequency switch 4a, a notch filter 4
b and the diplexer 2 and the first of the diplexers 2
Is transmitted from the antenna 1 connected to the port P11.

At this time, the high frequency switch 3a of the DCS system 3
0V is applied to the control terminal Vc1 at
By turning off 1d, the transmission signal of the DCS system 3 is prevented from being transmitted. Also, by connecting the diplexer 2, the transmission signal of the GSM system 4 is
Of the transmitting unit Txd and the receiving unit Rxd. Further, the notch filter 4b of the GSM system 4 attenuates the third harmonic of the GSM system 4.

Next, when receiving the reception signals of the DCS system 3 and the GSM system 4, 0V is applied to the control terminal Vc1 in the high frequency switch 3a of the DCS system 3 to turn off the diodes D1d and D2d, and the GSM system 4 By applying 0 V to the control terminal Vc2 in the high-frequency switch 4a to turn off the diodes D1g and D2g, the DCS system 3
Is transmitted to the transmission unit Txd of the DCS system 3 and the GSM system 4
Is prevented from sneaking into the transmission unit Txg of the GSM system 4.

Further, by connecting the diplexer 2, the received signal of the DCS system 3 is transmitted to the GSM system 4,
Are prevented from sneaking into the DCS system 4 respectively.

According to the composite high frequency component of the first embodiment, the diplexer, the high frequency switch and the notch filter forming the composite high frequency component are integrated with the ceramic multilayer substrate formed by stacking a plurality of ceramic sheet layers. Therefore, the matching between the diplexer and the high-frequency switch can be easily adjusted, and a matching circuit for performing the matching between the diplexer and the high-frequency switch is not required. Therefore, the size of the composite high-frequency component can be reduced. By the way,
It has become possible to integrate one diplexer, two high-frequency switches, and two notch filters into a size of 6.3 mm × 5 mm × 2 mm.

Further, since the filter is a notch filter, it is possible to attenuate only the second and third harmonics to be attenuated, thereby reducing the influence of the fundamental wave on the pass band. Therefore, the insertion loss in the pass band of the fundamental wave can be reduced as compared with the case where the entire harmonic band is attenuated as in the case of a low-pass filter or a band-pass filter. Becomes possible.

Further, the diplexer includes a first inductor and a first capacitor, the high-frequency switch includes a diode, a second inductor, and a second capacitor, and the notch filter includes a third inductor. , And a third capacitor, which are built in or mounted on the ceramic multilayer substrate and are connected by connecting means formed inside the ceramic multilayer substrate. , And downsizing can be realized. In addition, the loss due to wiring between components can be improved, and as a result,
It is possible to improve the loss of the entire composite high-frequency component.

Further, since the strip line electrode serving as the inductor is built in the ceramic multilayer substrate, the length of the strip line electrode serving as the inductor can be reduced due to the wavelength shortening effect. Therefore, the insertion loss of these stripline electrodes can be improved, so that the size and the loss of the composite high-frequency component can be reduced. As a result, miniaturization and high performance of the mobile communication device equipped with the composite high-frequency component can be realized at the same time.

FIG. 5 is a circuit diagram of a composite high-frequency component according to a second embodiment of the present invention. The composite high-frequency component 20 is different from the composite high-frequency component 10 of the first embodiment (FIG. 1) in DCS.
The connection positions of the notch filter 3b forming the system 3 and the notch filter 4b forming the GSM system 4 are different.

That is, the notch filter 3b forming the DCS system 3 is connected to the transmitting section Txd on the downstream side of the high frequency switch 3a, and the notch filter 4b forming the GSM system 4 is connected to the transmitting section Txg on the downstream side of the high frequency switch 4a. You.

According to the composite high-frequency component of the second embodiment described above, the notch filter is connected to the transmission section on the subsequent stage of the high-frequency switch. It can be attenuated by this notch filter. Therefore, insertion loss on the receiving side can be improved.

FIG. 6 is a perspective view showing the appearance of a third embodiment of the composite high frequency component of the present invention. Composite high frequency component 30
Is a high-frequency switch 3 constituting a DCS system 3 and a GSM system 4 as compared with the composite high-frequency component 10 (FIG. 1) of the first embodiment.
a, 4a, the parallel trap coils L21d, L2
1g and the choke coils L22d and L22g consist of chip coils, and are different in that they are mounted on the ceramic multilayer substrate 11.

According to the composite high-frequency component of the third embodiment, since the parallel trap coil and the choke coil of the high-frequency switch are composed of chip coils having a high Q value, the same applies to a plurality of systems having different frequency bands. Shaped chip coils can be used. Therefore, the design change by changing the frequency band is facilitated, so that the design can be changed in a short time, and as a result, the manufacturing cost can be reduced.

Further, since the Q value of the parallel trap coil and the choke coil is increased, the pass band is widened and the loss can be further reduced.

In the above embodiment, the case where the composite high-frequency component is used for the combination of DCS and GSM has been described. However, the use is not limited to the combination of DCS and GSM. For example, PC
S (Personal Communication Services) and AMPS (Advan
ced Mobile Phone Services), DECT
(Digital European Cordless Telephone) and GSM, PHS (Personal Handy-phone System) and PDC (Personal Digital Cellular),
And so on.

Although the case where there are two signal paths has been described, similar effects can be obtained when there are three or more signal paths.

[0064]

According to the composite high frequency component of the first aspect, the diplexer, the high frequency switch and the filter that constitute the composite high frequency component are integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers. The matching adjustment between the diplexer and the high-frequency switch is facilitated, and it is not necessary to provide a matching circuit for performing the matching adjustment between the diplexer and the high-frequency switch and between the high-frequency switch and the filter.

Therefore, since the number of components can be reduced, the size of a circuit board forming a microwave circuit having a plurality of signal paths can be reduced.

According to the composite high-frequency component of the second aspect, since the filter is connected to the transmission section on the subsequent stage of the high-frequency switch, it is possible to attenuate the distortion of the transmission signal by the high-output amplifier included in the transmission section. Therefore, the insertion loss of the receiving unit can be improved.

According to the third aspect of the present invention, since the filter is a notch filter, it is possible to attenuate only the second and third harmonics to be attenuated,
As a result, the influence of the fundamental wave on the pass band can be reduced.
Therefore, the insertion loss in the pass band of the fundamental wave can be reduced as compared with the case where the entire harmonic band is attenuated as in the case of a low-pass filter or a band-pass filter. Becomes possible.

According to the fourth aspect of the present invention, the diplexer includes the first inductance element and the first capacitance element, and the high frequency switch includes the switching element, the second inductance element, and the second inductance element. A connection means formed by a capacitance element, wherein the filter is formed by a third inductance element and a third capacitance element, and these are built in or mounted on the ceramic multilayer substrate, and are formed inside the ceramic multilayer substrate; Therefore, the composite high-frequency component can be constituted by one ceramic multilayer substrate, and downsizing can be realized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Since the strip line electrode serving as the inductor is built in or mounted on the ceramic multilayer substrate, the length of the strip line electrode serving as the inductor can be reduced due to the wavelength shortening effect. Therefore, the insertion loss of these stripline electrodes can be improved, so that the size and the loss of the composite high-frequency component can be reduced. As a result, miniaturization and high performance of the mobile communication device equipped with the composite high-frequency component can be realized at the same time.

According to the composite high-frequency component of claim 5, since the choke coil and the parallel trap coil among the second inductance elements constituting the plurality of high-frequency switches are chip coils, the high-frequency switch can be designed with low loss. At the same time, it is possible to increase the bandwidth.

According to the mobile communication device of the sixth aspect, since a small and low-loss composite high-frequency component is used, the miniaturization and high performance of the mobile communication device equipped with the composite high-frequency component are realized. it can.

[Brief description of the drawings]

FIG. 1 is a circuit diagram of a first embodiment according to a composite high-frequency component of the present invention.

FIG. 2 is a perspective view of the composite high-frequency component of FIG.

3A is a top view of (a) a first sheet layer to (h) an eighth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG. 2;

4A is a top view of a ninth sheet layer to (e) a top view of a thirteenth sheet, and FIG. 4F is a bottom view of the thirteenth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG.

FIG. 5 is a circuit diagram of a second embodiment according to the composite high-frequency component of the present invention.

FIG. 6 is a perspective view of a third embodiment of the composite high-frequency component according to the present invention.

FIG. 7 is a block diagram showing a part of the configuration of a general dual-band mobile phone (mobile communication device).

[Explanation of symbols]

10, 20, 30 Composite high frequency component 2 Diplexer 3, 4 Signal path (DCS system, GSM system) 3a, 4a High frequency switch 3b, 4b Notch filter 11 Ceramic multilayer substrate 11a to 11m Sheet layer C11 to C15 First capacitance element C21d To C23d, C21g to C23g Second capacitor element C31d, C32d, C31g, C32g Third capacitor element D1d, D2d, D1g, D2g Switching element L11, L12 First inductor element L21d to L23d, L21g to L23g Second inductor element L31d, L31g Third inductor element

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Hideki Mutoh 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Takanori Uejima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Stock Company Murata Manufacturing Co., Ltd. (72) Inventor Norio Nakajima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Pref.

Claims (6)

[Claims] 1. A composite high frequency component constituting a part of a microwave circuit having a plurality of signal paths corresponding to respective frequencies, wherein a transmission signal from the plurality of signal paths is selected at the time of transmission. A diplexer for selecting a reception signal to the plurality of signal paths at the time of reception, a plurality of high frequency switches for separating each of the plurality of signal paths into a transmission unit and a reception unit, and a connection in the signal path. A composite high-frequency component comprising a plurality of filters, wherein the diplexer, the high-frequency switch, and the filter are integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers. 2. The composite high-frequency component according to claim 1, wherein the plurality of filters are connected to a side of the transmission unit subsequent to the plurality of high-frequency switches. 3. The composite high-frequency component according to claim 1, wherein the plurality of filters are notch filters. 4. The diplexer includes a first inductance element and a first capacitance element,
The plurality of high-frequency switches are switching elements;
, And the plurality of filters include a third inductance element and a third capacitance element, and the switching element and the first to third inductances. 4. The device according to claim 1, wherein the element and the first to third capacitance elements are built in or mounted on the ceramic multilayer substrate, and are connected by connection means formed inside the ceramic multilayer substrate. The composite high-frequency component according to claim 3. 5. The second inductance element constituting the plurality of high frequency switches includes a parallel trap coil and a choke coil, and the parallel trap coil and the choke coil are chip coils. Composite high frequency components. 6. A mobile communication device using the composite high-frequency component according to claim 1.