JP2006118942A - Sheet-shaped probe, its manufacturing method, and its application - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sheet-shaped probe capable of reliably preventing positional displacements between electrode structures and electrodes to be inspected due to temperature changes and therefore stably maintaining a satisfactory state of electrical connection even when an object to be inspected is a large-area wafer with a diameter of 8 inch or more circuit device having extremely small pitch of electrodes to be inspected and provide its manufacturing method and its applications. <P>SOLUTION: In the sheet-shaped probe, a laminated body in which a resin sheet for an insulating film is integrally overlies a metallic foil for back electrode parts is used. A supporting film in which a plurality of openings are formed is pasted to the other surface of the metallic foil for back electrode parts of the laminated body. A plurality of through holes are formed in the resin sheet for an insulating film correspondingly to the electrode structures to be formed. Short-circuit parts connected to the metallic foil for back electrode parts are each formed in the through holes of the resin sheet for an insulating film by plating, and surface electrode parts connected to them are formed. The metallic foil for back electrode parts is then etched. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a sheet-like probe used for electrical inspection of a circuit device, a manufacturing method thereof, and its application. More specifically, for example, in order to perform electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state. The present invention relates to a sheet-like probe used, a manufacturing method thereof, and an application thereof.

For example, in an electrical inspection of a circuit device such as a wafer on which a large number of integrated circuits are formed or an electronic component such as a semiconductor element, the inspection is arranged according to a pattern corresponding to the pattern of the electrode to be inspected of the circuit device to be inspected. A probe device having an electrode is used. As such a probe apparatus, conventionally, an apparatus in which inspection electrodes (inspection probes) made of pins or blades are arranged is used.
However, when the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed, it is necessary to arrange a large number of inspection probes in order to produce the probe device for wafer inspection. The probe device is extremely expensive, and when the pitch of the electrodes to be inspected is small, it is difficult to manufacture the probe device itself. Further, since the wafer is generally warped, and the state of the warp varies depending on the product (wafer), each of the inspection probes of the probe apparatus can be stably and reliably applied to a large number of inspection electrodes on the wafer. It is practically difficult to ensure contact.

  For the reasons described above, recently, an inspection circuit board in which a plurality of inspection electrodes are formed according to a pattern corresponding to the pattern of the electrode to be inspected on one surface, and the inspection circuit board are arranged on one surface. A probe comprising an anisotropic conductive sheet, and a sheet-like probe arranged on the anisotropic conductive sheet, in which a plurality of electrode structures extending through the insulating sheet in the thickness direction are arranged. Cards have been proposed (see, for example, Patent Document 1 and Patent Document 2).

  The sheet-like probe in the probe card will be described in detail. As shown in FIG. 25, the sheet-like probe 90 has a flexible circular insulating sheet 91 made of a resin such as polyimide, for example. A plurality of electrode structures 95 extending in the thickness direction are arranged on the sheet 91 according to a pattern corresponding to the pattern of the electrode to be inspected of the circuit device to be inspected. Each of the electrode structures 95 includes a protruding surface electrode portion 96 exposed on the surface of the insulating sheet 91 and a plate-like back surface electrode portion 97 exposed on the back surface of the insulating sheet 91. Are integrally connected via a short-circuit portion 98 that extends through in the thickness direction. In addition, a ring-shaped holding member 92 made of, for example, ceramics is provided on the peripheral edge of the insulating sheet 91. This holding member 92 is for controlling the thermal expansion in the surface direction of the insulating sheet 91, thereby preventing the displacement of the electrode structure 95 and the electrode to be inspected due to a temperature change in the burn-in test. Is done.

However, such a sheet-like probe has the following problems.
For example, in a wafer having a diameter of 8 inches or more, 5000 or 10,000 or more electrodes to be inspected are formed, and the pitch of the electrodes to be inspected is 160 μm or less. A sheet-like probe for inspecting such a wafer has a large area corresponding to the wafer, and has 5000 or 10,000 or more electrode structures arranged at a pitch of 160 μm or less. Must be used.
Thus, the linear thermal expansion coefficient of the material constituting the wafer, such as silicon, is about 3.3 × 10 ⁻⁶ / K, while the material constituting the insulating sheet in the sheet-like probe, such as the linear thermal expansion coefficient of polyimide. Is about 4.5 × 10 ⁻⁵ / K. Therefore, for example, when each of a wafer and a sheet-like probe each having a diameter of 30 cm at 25 ° C. is heated from 25 ° C. to 125 ° C., the change in diameter of the wafer is theoretically only 99 μm, but the sheet The change in the diameter of the insulating sheet in the probe has reached 1350 μm, and the difference in thermal expansion between them is 1251 μm.
As described above, when a large difference occurs in the absolute amount of thermal expansion in the surface direction between the wafer and the insulating sheet in the sheet-like probe, the peripheral portion of the insulating sheet is a line equivalent to the linear thermal expansion coefficient of the wafer. Even if it is fixed by a holding member having a thermal expansion coefficient, it is difficult to reliably prevent displacement between the electrode structure and the electrode to be inspected due to temperature change in the burn-in test. It cannot be kept stable.
In addition, even if the inspection target is a small circuit device, if the pitch of the electrodes to be inspected is 50 μm or less, the burn-in test may cause misalignment between the electrode structure and the electrodes to be inspected due to temperature changes. Since it is difficult to prevent reliably, a good electrical connection state cannot be stably maintained.

For such a problem, Patent Document 1 proposes a means for relaxing the thermal expansion of the insulating sheet by fixing it to the holding member in a state where tension is applied to the insulating sheet. .
However, in such a means, it is extremely difficult to apply a uniform tension to all directions in the surface direction of the insulating sheet, and the insulating sheet is formed by forming an electrode structure. The balance of the acting tension changes, and as a result, the insulating sheet has anisotropy with respect to thermal expansion, so even if it is possible to suppress the thermal expansion in the-direction in the plane direction, The thermal expansion in the other direction that intersects with one direction cannot be suppressed, and eventually the positional deviation between the electrode structure and the electrode to be inspected due to the temperature change cannot be prevented.
Further, in order to fix the insulating sheet to the holding member in a state in which tension is applied thereto, a complicated process of adhering the insulating sheet to the holding member under heating is necessary. There is a problem of causing an increase.

In order to solve the above problem, the present applicant has proposed a sheet-like probe comprising a contact film in which a plurality of electrode structures are held by an insulating film and a frame plate that supports the contact film (Japanese Patent Application No. (See 2004-131764). This sheet-like probe uses a laminated body in which an insulating film forming sheet is laminated on a metal plate, and forms a through-hole in the insulating film forming sheet of the laminated body and performs a plating treatment to thereby form a surface electrode portion. And forming a frame plate and a back electrode portion by forming a short-circuit portion and then etching the metal plate.
However, this sheet-like probe has been found to have the following problems because the frame plate and the back electrode portion are formed from the same metal plate.
That is, in order to obtain a frame plate having sufficient strength, it is necessary to use a metal plate having a large thickness. However, when a thick metal plate is used, it is difficult to form a fine back electrode portion with a small pitch.
In addition, the characteristics required for the material constituting the frame plate (for example, strength and linear thermal expansion coefficient) are different from the characteristics required for the material for constituting the back electrode part (for example, conductivity and fine workability). In order to form the frame plate and the back electrode portion with the same metal plate, one of the characteristics must be sacrificed.

Japanese Patent Laid-Open No. 2001-15565 Japanese Patent Laid-Open No. 2002-184821

The present invention has been made on the basis of the above circumstances. The first object of the present invention is a wafer whose inspection object is a large area with a diameter of 8 inches or more and the pitch of electrodes to be inspected is extremely small. However, there is provided a sheet-like probe that can reliably prevent displacement between the electrode structure and the electrode to be inspected due to temperature change, and can stably maintain a good electrical connection state, and a method for manufacturing the same. It is to provide.
The second object of the present invention is to stably maintain a good electrical connection state even when the object to be inspected is a wafer having a large area of 8 inches or more in diameter and an extremely small pitch of electrodes to be inspected. It is to provide a probe card.
A third object of the present invention is to provide a wafer inspection apparatus provided with the above probe card.

The sheet-like probe manufacturing method of the present invention includes a support film made of a metal having a plurality of openings formed therein, and a plurality of contact films arranged and supported by the support film so as to close the openings, respectively. Each of the contact films is formed on a surface electrode portion and a back surface exposed on the surface of the insulating film, which are arranged and held in accordance with a pattern corresponding to an insulating film made of a flexible resin and an electrode to be connected to the insulating film. A method of manufacturing a sheet-like probe comprising a plurality of electrode structures in which exposed back electrode portions are connected by a short-circuit portion extending in the thickness direction of the insulating film, the insulating film being formed on one surface of the metal foil for the back electrode portion Prepared a laminated body in which resin sheets are laminated integrally,
A support film in which a plurality of openings is formed is adhered to the other surface of the metal foil for the back electrode portion in the laminate, and the insulating film resin sheet in the laminate corresponds to the pattern of the electrode structure to be formed. A plurality of through holes are formed according to a pattern, and a short circuit portion connected to the metal foil for the back electrode portion is formed in each through hole of the insulating film resin sheet by plating the laminate. And forming a surface electrode portion connected to the short-circuit portion,
Then, it has the process of forming the back surface electrode part connected with the short circuit part by etching the metal foil for back surface electrode parts in the said laminated body.

In the method for manufacturing a sheet-like probe of the present invention, it is preferable that the insulating film resin sheet is made of an etchable resin, and the through hole is formed in the insulating film resin sheet by etching.
Moreover, after forming the back electrode part, it is preferable to form a plurality of insulating films on the insulating film resin sheet by etching.
The insulating film resin sheet is preferably made of polyimide.
Moreover, it is preferable that the linear thermal expansion coefficient of the support membrane is 3 × 10 ⁻⁵ / K or less.

  The sheet-like probe of the present invention is manufactured by the above method.

  The probe card of the present invention is a probe card used for performing electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state, and is integrated on a wafer to be inspected. A circuit board for inspection in which an inspection electrode is formed on the surface in accordance with a pattern corresponding to the pattern of the electrode to be inspected in the circuit, an anisotropic conductive connector disposed on the surface of the circuit board for inspection, and the anisotropic conductivity It comprises the above-mentioned sheet-like probe disposed on a connector.

The wafer inspection apparatus of the present invention is a wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
It comprises the above probe card.

According to the method for manufacturing a sheet-like probe of the present invention, the support film and the back electrode portion of the electrode structure can be formed of different materials. Therefore, it is possible to obtain a support film having a large thickness and sufficient strength, and it is possible to form a fine back electrode part with a small pitch, and is required for each of the support film and the back electrode part. The material can be selected according to the characteristics.
According to the sheet-like probe thus obtained, each contact film having an electrode structure is disposed and supported in each of a plurality of openings formed in the support film, whereby each of the contact films is The contact film having a small area may be used, and the contact film having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film. Even in extremely small pitches, the burn-in test can reliably prevent misalignment between the electrode structure and the electrode to be inspected due to temperature changes, thus maintaining a stable electrical connection. can do.
According to the probe card of the present invention, since the above-described sheet-like probe is provided, the inspection object is a large area wafer having a diameter of 8 inches or more or a circuit device having a very small pitch of the electrodes to be inspected. Thus, a good electrical connection state can be stably maintained.
Such a probe card includes a wafer inspection apparatus for performing an electrical inspection of a large area wafer having a diameter of 8 inches or more, and an inspection apparatus for performing an electrical inspection of a circuit device having a very small pitch of electrodes to be inspected. It is extremely suitable as a probe card used in the above.

Hereinafter, embodiments of the present invention will be described in detail.
<Sheet probe>
FIG. 1 is a plan view showing a first example of a sheet-like probe according to the present invention, FIG. 2 is an enlarged plan view showing a contact film in the sheet-like probe of the first example, and FIG. It is sectional drawing for description which expands and shows the contact film in the sheet-like probe of the 1st example.
The sheet-like probe 10 according to the first example is used to collectively perform a burn-in test of each integrated circuit in a wafer state on a wafer on which a plurality of integrated circuits are formed. 4 also includes a circular support film 11 made of metal with a plurality of openings. The openings 12 of the support film 11 are formed corresponding to the pattern of the electrode region where the electrodes to be inspected are formed in all the integrated circuits formed on the wafer to be inspected. Further, the support film 11 in this example is formed with positioning holes 13 for positioning with an anisotropic conductive connector and an inspection circuit board, which will be described later.

As the metal constituting the support film 11, iron, copper, nickel, titanium, or an alloy or alloy steel thereof can be used. In the manufacturing method described later, the opening 12 can be easily formed by an etching process. In view of the capability, iron-nickel alloy steels such as 42 alloy, Invar, and Kovar are preferable.
In addition, as the support film 11, it is preferable to use one having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, more preferably from −1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably. Is −1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of the material constituting the support film 11 include an Invar type alloy such as Invar, an Elinvar type alloy such as Elinvar, an alloy such as Super Invar, Kovar, and 42 alloy, or an alloy steel.

Moreover, it is preferable that the thickness of the support film 11 is 3-150 micrometers, More preferably, it is 5-100 micrometers.
When this thickness is too small, the strength required for the support film for supporting the contact film 15 may not be obtained. On the other hand, if this thickness is excessive, it may be difficult to form the opening 12 with high dimensional accuracy by etching in a manufacturing method described later.

A metal film 18 is integrally formed on one surface of the support film 11 via an adhesive layer 19, and a plurality of contact films 15 cover the opening 12 of the support film 11 on the metal film 18. The contact film 15 is supported by the support film 11 via the adhesive layer 19 and the metal film 18.
The metal film 18 is made of the same material as that of the back electrode portion 17b in the electrode structure 17 described later.
Moreover, as a material which comprises the adhesive layer 19, a silicone rubber adhesive, an epoxy adhesive, a polyimide adhesive, a cyanoacrylate adhesive, a polyurethane adhesive, or the like can be used.

As shown in FIG. 3, each of the contact films 15 has a flexible insulating film 16, and the insulating film 16 includes a plurality of electrode structures 17 made of metal extending in the thickness direction of the insulating film 16. According to the pattern corresponding to the pattern of the electrode to be inspected in the electrode region of the integrated circuit formed on the wafer to be inspected, the insulating film 16 is arranged away from each other in the plane direction. Each of the structures 17 is disposed so as to be located in the opening 12 of the support film 11.
Each of the electrode structures 17 includes a protruding surface electrode portion 17 a exposed on the surface of the insulating film 16 and a plate-like back surface electrode portion 17 b exposed on the back surface of the insulating film 16 in the thickness direction of the insulating film 16. They are integrally connected to each other by a short-circuit portion 17c extending therethrough.

The material constituting the insulating film 16 is not particularly limited as long as it is flexible and has insulating properties, and resin materials such as polyimide and liquid crystal polymer, and composite materials thereof can be used. In the manufacturing method, it is preferable to use polyimide in that the through holes for the electrode structure can be easily formed by etching.
As other materials constituting the insulating film 16, a mesh or a nonwoven fabric, or a material in which these are impregnated with a resin or an elastic polymer substance can be used. As fibers forming such a mesh or nonwoven fabric, aramid fibers, polyethylene fibers, polyarylate fibers, nylon fibers, fluororesin fibers such as Teflon (registered trademark) fibers, and organic fibers such as polyester fibers can be used. By using such a material as a material constituting the insulating film 16, even if the electrode structures 17 are arranged at a small pitch, the flexibility of the entire contact film 15 is not greatly reduced. Even if there is a variation in the protruding height of the electrode or the protruding height of the electrode to be inspected, the contact film 15 is sufficiently absorbed by the flexibility of the contact film 15, so that stable electrical connection to each of the electrodes to be inspected can be achieved reliably. can do.
The thickness of the insulating film 16 is not particularly limited as long as the flexibility of the insulating film 16 is not impaired, but is preferably 5 to 150 μm, more preferably 7 to 100 μm, and still more preferably 10 to 50 μm. .

  As a material constituting the electrode structure 17, nickel, iron, copper, gold, silver, palladium, iron, cobalt, tungsten, rhodium, or an alloy or alloy steel thereof can be used. May consist of a single metal as a whole, an alloy of two or more metals or alloy steel, or a laminate of two or more metals.

In addition, when an electrical inspection is performed on an electrode to be inspected having an oxide film formed on the surface, the electrode structure 17 of the sheet-like probe and the electrode to be inspected are brought into contact with each other and the surface electrode portion 17a of the electrode structure 17 covers It is necessary to destroy the oxide film on the surface of the inspection electrode to achieve electrical connection between the electrode structure 17 and the electrode to be inspected. Therefore, it is preferable that the surface electrode portion 17a of the electrode structure 17 has such a hardness that the oxide film can be easily broken. In order to obtain such a surface electrode part 17a, the metal which comprises the surface electrode part 17a can be made to contain a powder material with high hardness.
As such a powder substance, diamond powder, silicon nitride, silicon carbide, ceramics, glass or the like can be used. By containing an appropriate amount of these non-conductive powder substances, the conductivity of the electrode structure 17 can be increased. The oxide film formed on the surface of the electrode to be inspected can be destroyed by the surface electrode portion 17a of the electrode structure 17 without damaging the structure.
Further, in order to easily destroy the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 17a in the electrode structure 17 is a sharp protrusion, or fine irregularities are formed on the surface of the surface electrode portion 17a. Or can be formed.

The pitch p of the electrode structures 17 in the contact film 15 is set according to the pitch of the electrodes to be inspected on the wafer to be inspected, and is preferably 40 to 250 μm, and more preferably 40 to 150 μm, for example.
Here, the “pitch of electrode structures” is the shortest distance between the centers of adjacent electrode structures.

In the electrode structure 17, the ratio of the protrusion height to the diameter R in the surface electrode portion 17a is preferably 0.2 to 3, more preferably 0.25 to 2.5. By satisfying such conditions, even if the electrodes to be inspected have a small pitch and a minute one, the electrode structure 17 having a pattern corresponding to the pattern of the electrodes to be inspected can be easily formed. A stable electrical connection state can be reliably obtained for the wafer.
Moreover, it is preferable that the diameter R of the surface electrode part 17a is 1-3 times the diameter r of the short circuit part 17c, More preferably, it is 1-2 times.
The diameter R of the surface electrode portion 17a is preferably 30 to 75% of the pitch p of the electrode structure 17 and more preferably 40 to 60%.

Further, the outer diameter L of the back electrode portion 17b may be larger than the diameter of the short-circuit portion 17c and smaller than the pitch p of the electrode structure 17, but is preferably as large as possible. Thus, for example, a stable electrical connection can be reliably achieved even for an anisotropic conductive sheet.
Further, the diameter r of the short-circuit portion 17c is preferably 15 to 75% of the pitch p of the electrode structure 17, and more preferably 20 to 65%.

The specific dimensions of the electrode structure 17 will be described. The protruding height of the surface electrode portion 17a is 15 to 50 μm in that stable electrical connection can be achieved with respect to the electrode to be inspected. Preferably, it is 15-30 micrometers.
The diameter R of the surface electrode portion 17a is set in consideration of the above conditions, the diameter of the electrode to be inspected, etc., and is, for example, 30 to 200 μm, and preferably 35 to 150 μm.
The diameter r of the short-circuit portion 17c is preferably 10 to 120 μm, more preferably 15 to 100 μm, from the viewpoint that sufficiently high strength can be obtained.
The thickness of the back electrode part 17b is preferably 15 to 150 μm, more preferably 20 to 100 μm, in that the strength is sufficiently high and excellent repeated durability can be obtained.

  A coating film may be formed on the front electrode portion 17a and the back electrode portion 17b in the electrode structure 17 as necessary. For example, when the electrode to be inspected is made of a solder material, from the viewpoint of preventing the solder material from diffusing, the surface electrode portion 17a is covered with a non-diffusible metal such as silver, palladium, or rhodium. It is preferable to form a covering film.

Such a sheet-like probe 10 of the first example is manufactured as follows.
First, as shown in FIG. 5, an insulating film resin sheet 15A is integrally laminated on one surface of a metal foil 18A for the back electrode portion made of the same material as the back electrode portion 17b in the electrode structure 17 to be formed. A circular laminated body 15A is prepared.
On the other hand, as shown in FIG. 6, a circular support film 11 in which a plurality of openings 12 are formed corresponding to the pattern of the electrode region in which the inspection target electrode of the integrated circuit is formed on the wafer to be inspected, A protective tape 20 is disposed on one surface of the support film 11 along the peripheral edge thereof. Here, as a method of forming the opening 12 of the support film 11, an etching method or the like can be used.

Next, as shown in FIG. 7, an adhesive layer 19 made of, for example, an adhesive resin is formed on the other surface of the metal foil 18 </ b> A for the back electrode part in the laminate 15 </ b> A, and a protective tape 20 is provided as shown in FIG. 8. The support film formed is adhered. Thereafter, as shown in FIG. 9, a plurality of through holes 17H penetrating in the thickness direction are formed in the insulating film resin sheet 16A in the laminated body 15A according to the pattern corresponding to the pattern of the electrode structure to be formed. Here, as a method of forming the through-hole 17H in the insulating film resin sheet 16A, laser processing, etching processing, or the like can be used.
Next, the back surface of the support film 11 and the opening 12 in the laminated body 15A are covered with a protective tape (not shown), and the back surface electrode portion metal foil 18A in the laminated body 15A is subjected to a plating process, as shown in FIG. As described above, in each through hole 17H formed in the insulating film resin sheet 16A, a short-circuit portion 17c integrally connected to the metal foil 18A for the back electrode portion is formed, and is integrally connected to the short-circuit portion 17c. A surface electrode portion 17a protruding from the surface of the insulating resin sheet 16A is formed. Thereafter, the protective tape is removed from the back surface of the support film 11, and as shown in FIG. 11, by removing a portion exposed from the opening 12 of the support film 11 in the adhesive layer 19, one of the metal foil 18 </ b> A for the back electrode portion is removed. As shown in FIG. 12, a plurality of back electrode portions 17b integrally connected to the short-circuit portion 17c are formed by exposing the exposed portion and etching the exposed portion of the metal foil 18A for the back electrode portion. Thus, the electrode structure 17 is formed.
Next, by performing an etching process on the insulating film resin sheet 16A and removing a part thereof, a plurality of independent insulating films 16 are formed as shown in FIG. A plurality of contact films 15 are formed in which a plurality of electrode structures 17 extending in the thickness direction through 16 are arranged.
And the sheet-like probe 10 of the 1st example shown in FIGS. 1-3 is obtained by removing the protective tape 20 (refer FIG. 6) from the peripheral part of the support film 11. FIG.

According to the above manufacturing method, the back electrode is formed by bonding the support film 11 having a plurality of openings formed on the metal foil 18A for the back electrode in the laminate 15A and etching the metal foil 18A for the back electrode. In order to form the part 17b, the support film 11 and the back electrode part 17b in the electrode structure 17 can be formed of different materials. Therefore, the support film 11 having a large thickness and sufficient strength can be obtained, and the fine back electrode part 17b can be formed with a small pitch, and each of the support film 11 and the back electrode part 17b can be formed. The material can be selected according to the characteristics required for the above.
And according to the sheet-like probe 10 obtained in this way, the contact film 15 having the electrode structure 17 is disposed and supported in each of the plurality of openings 12 formed in the support film 11, Each of the contact films 15 may have a small area, and the contact film 15 having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film 16, so that the inspection object is a large area having a diameter of 8 inches or more. Even in the case where the pitch of the electrodes to be inspected is extremely small, in the burn-in test, the positional deviation between the electrode structure and the electrodes to be inspected due to the temperature change can be surely prevented. The electrical connection state can be maintained stably.

FIG. 14 is a plan view showing a second example of the sheet-like probe according to the present invention.
The sheet-like probe 10 according to the second example is used for performing a probe test of each integrated circuit on a wafer on which a plurality of integrated circuits are formed, for example, in the state of the wafer. As shown, it has a support film 11 made of metal with a plurality of openings. The openings 12 of the support film 11 correspond to the pattern of the electrode region where the electrodes to be inspected are formed in, for example, 32 (8 × 4) integrated circuits formed on the wafer to be inspected. Is formed. Further, in the support film 11 in this example, a positioning hole 13 for positioning with an inspection circuit board to be described later is formed. Other configurations of the sheet-like probe 10 of the second example are the same as those of the sheet-like probe 10 of the first example (see FIGS. 2 and 3).
The sheet-like probe 10 of the second example can be manufactured in the same manner as the first sheet-like probe 10.

  According to the sheet-like probe 10 described above, the contact film 15 having the electrode structure 17 is disposed and supported in each of the plurality of openings 12 formed in the support film 11. A thing with a small area may be sufficient. Since the contact film 15 having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film 16, the inspection object is a large area wafer having a diameter of 8 inches or more and the pitch of the electrodes to be inspected is small. Even if it is extremely small, it is possible to reliably prevent displacement between the electrode structure and the electrode to be inspected due to a temperature change in the probe test, and thus it is possible to stably maintain a good electrical connection state. it can.

<Probe card>
FIG. 16 is an explanatory cross-sectional view showing the configuration of the first example of the probe card according to the present invention, and FIG. 17 is an explanatory cross-sectional view showing the configuration of the main part of the probe card of the first example. .
The probe card 30 of the first example is used for performing a burn-in test of each of the integrated circuits in a batch on a wafer on which a plurality of integrated circuits are formed, for example, for inspection. A circuit board 31, an anisotropic conductive connector 40 provided on one surface of the circuit board 31 for inspection, and a sheet-like probe 10 of the first example provided on the anisotropic conductive connector 40. Has been.

The inspection circuit board 31 has guide pins 33 for positioning the anisotropic conductive connector 40 and the sheet-like probe 10, and is formed on one surface of the inspection circuit board 31 on the wafer to be inspected. A plurality of inspection electrodes 32 are formed according to a pattern corresponding to the pattern of the electrodes to be inspected in all integrated circuits.
As a substrate material constituting the inspection circuit board 31, various conventionally known substrate materials can be used. Specific examples thereof include a glass fiber reinforced epoxy resin, a glass fiber reinforced phenol resin, and a glass fiber reinforced type. Composite resin substrate material such as polyimide resin, glass fiber reinforced bismaleimide triazine resin, ceramic substrate material such as glass, silicon dioxide, alumina, etc., laminated substrate material in which resin such as epoxy resin or polyimide resin is laminated using metal plate as core material Etc.
When a probe card for use in the burn-in test is configured, it is preferable to use one having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, more preferably 1 × 10 ⁻⁷ to 1 × 10. ⁻⁵ / K, particularly preferably 1 × 10 ^{−6 to} 6 × 10 ⁻⁶ / K.
Specific examples of such substrate materials include inorganic substrate materials made of Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, boron nitride, etc., iron such as 42 alloy, Kovar, and Invar. -The laminated board material etc. which laminated | stacked resin, such as an epoxy resin or a polyimide resin, using the metal plate which consists of nickel alloy steel as a core material are mentioned.

  As shown in FIG. 18, the anisotropic conductive connector 40 includes a disc-shaped frame plate 41 in which a plurality of openings 42 extending through the thickness direction are formed. The opening 42 of the frame plate 41 is formed corresponding to the pattern of the electrode region where the electrodes to be inspected are formed in all the integrated circuits formed on the wafer to be inspected. A plurality of elastic anisotropic conductive films 50 having conductivity in the thickness direction are arranged on the frame plate 41 in a state of being supported by the opening edge portions of the frame plate 41 so as to block the one opening 42. . The frame plate 41 in this example is formed with positioning holes (not shown) for positioning the sheet-like probe 10 and the inspection circuit board 31.

Each of the elastic anisotropic conductive films 50 is made of an elastic polymer material, and is formed around a plurality of connection conductive portions 52 extending in the thickness direction and the connection conductive portions 52. Each of the conductive parts 52 has a functional part 51 including an insulating part 53 that insulates the conductive parts 52 from each other, and the functional part 51 is disposed within the opening 42 of the frame plate 41. The conductive portion 52 for connection in the functional portion 51 is arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the electrode area in the integrated circuit formed on the wafer to be inspected.
A supported portion 55 fixedly supported by the opening edge portion of the frame plate 41 is integrally and continuously formed on the peripheral portion of the functional portion 51. Specifically, the supported portion 55 in this example is formed in a bifurcated shape, and is fixedly supported in close contact so as to grip the opening edge of the frame plate 41.
The conductive part 52 for connection in the functional part 51 of the elastic anisotropic conductive film 50 contains the conductive particles P exhibiting magnetism densely in an aligned state in the thickness direction. On the other hand, the insulating part 53 contains no or almost no conductive particles P.
Further, in the illustrated example, on both surfaces of the functional portion 51 in the elastic anisotropic conductive film 50, protruding portions 54 that protrude from other surfaces are formed at locations where the connecting conductive portion 52 and its peripheral portion are located. ing.

Although the thickness of the frame board 41 changes with the materials, it is preferable that it is 20-600 micrometers, More preferably, it is 40-400 micrometers.
When this thickness is less than 20 μm, the strength required when using the anisotropic conductive connector 40 is not obtained, the durability tends to be low, and the shape of the frame plate 41 is maintained. A degree of rigidity cannot be obtained, and the handleability of the anisotropic conductive connector 40 is low. On the other hand, when the thickness exceeds 600 μm, the elastic anisotropic conductive film 50 formed in the opening 42 is excessively thick, and has good conductivity in the connection conductive portion 52 and adjacent connection. It may be difficult to obtain insulation between the conductive portions 52.
The shape and size in the surface direction of the opening 42 of the frame plate 41 are designed according to the size, pitch, and pattern of the electrodes to be inspected of the wafer to be inspected.

The material constituting the frame plate 41 is not particularly limited as long as the frame plate 41 is not easily deformed and has rigidity enough to maintain its shape stably. For example, a metal material, a ceramic material Various materials such as a resin material can be used. When the frame plate 41 is made of, for example, a metal material, an insulating coating may be formed on the surface of the frame plate 41.
Specific examples of the metal material constituting the frame plate 41 include metals such as iron, copper, nickel, titanium, and aluminum, or alloys or alloy steels in which two or more of these are combined.

Moreover, as a material which comprises the frame board 41, it is preferable to use a thing with a linear thermal expansion coefficient of 3 * 10 < ^-5 > / K or less, More preferably, it is -1 * 10 < ^-7 > -1 * 10 < ^-5 > / K. Particularly preferably, it is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

The total thickness of the elastic anisotropic conductive film 50 (in the illustrated example, the thickness of the connecting conductive portion 52) is preferably 50 to 3000 μm, more preferably 70 to 2500 μm, and particularly preferably 100 to 2000 μm. If this thickness is 50 μm or more, the elastic anisotropic conductive film 50 having sufficient strength can be obtained reliably. On the other hand, if the thickness is 3000 μm or less, the connecting conductive portion 52 having the required conductive characteristics can be obtained with certainty.
The total protrusion height of the protrusions 54 is preferably 10% or more of the thickness of the protrusions 54, and more preferably 20% or more. By forming the projecting portion 54 having such a projecting height, the connecting conductive portion 52 is sufficiently compressed with a small applied pressure, so that good conductivity can be reliably obtained.
Further, the protrusion height of the protrusion 54 is preferably 100% or less of the shortest width or diameter of the protrusion 54, and more preferably 70% or less. By forming the projecting portion 54 having such a projecting height, the projecting portion 54 does not buckle when pressed, and thus the desired conductivity can be reliably obtained.
In addition, the thickness of the supported portion 55 (one thickness of the bifurcated portion in the illustrated example) is preferably 5 to 600 μm, more preferably 10 to 500 μm, and particularly preferably 20 to 400 μm.
Further, the supported portion 55 is not necessarily formed in a bifurcated shape, and may be fixed to only one surface of the frame plate 41.

As the elastic polymer material constituting the elastic anisotropic conductive film 50, a heat-resistant polymer material having a crosslinked structure is preferable. Various materials can be used as the curable polymer substance-forming material that can be used to obtain such a crosslinked polymer substance. Specific examples thereof include silicone rubber, polybutadiene rubber, natural rubber, and polyisoprene. Conjugated diene rubbers such as rubber, styrene-butadiene copolymer rubber, acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, styrene-butadiene-diene block copolymer rubber, styrene-isoprene block copolymer, etc. Block copolymer rubber and hydrogenated products thereof, chloroprene, urethane rubber, polyester rubber, epichlorohydrin rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, soft liquid epoxy rubber, etc. .
Among these, silicone rubber is preferable in terms of moldability and electrical characteristics.

As the silicone rubber, those obtained by crosslinking or condensing liquid silicone rubber are preferable. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be any of a condensation type, an addition type, a vinyl group or a hydroxyl group. Good. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, methyl phenyl vinyl silicone raw rubber, and the like.

Among these, liquid silicone rubber containing vinyl groups (vinyl group-containing polydimethylsiloxane) usually hydrolyzes dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylvinylchlorosilane or dimethylvinylalkoxysilane. And a condensation reaction, for example, followed by fractionation by repeated dissolution-precipitation.
In addition, the liquid silicone rubber containing vinyl groups at both ends is obtained by anionic polymerization of a cyclic siloxane such as octamethylcyclotetrasiloxane in the presence of a catalyst, using, for example, dimethyldivinylsiloxane as a polymerization terminator, and other reaction conditions. It can be obtained by appropriately selecting (for example, the amount of cyclic siloxane and the amount of polymerization terminator). Here, as the catalyst for anionic polymerization, alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or silanolate solution thereof can be used, and the reaction temperature is, for example, 80 to 130 ° C.
Such a vinyl group-containing polydimethylsiloxane preferably has a molecular weight Mw (referred to as a standard polystyrene equivalent weight average molecular weight; the same shall apply hereinafter) having a molecular weight of 10,000 to 40,000. In addition, from the viewpoint of heat resistance of the obtained elastic anisotropic conductive film 50, the molecular weight distribution index (the value of the ratio Mw / Mn between the standard polystyrene equivalent weight average molecular weight Mw and the standard polystyrene equivalent number average molecular weight Mn. The same applies hereinafter. ) Is preferably 2 or less.

On the other hand, a liquid silicone rubber containing hydroxyl groups (hydroxyl group-containing polydimethylsiloxane) usually undergoes hydrolysis and condensation reaction of dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylhydrochlorosilane or dimethylhydroalkoxysilane. For example, and fractionation by repeated dissolution-precipitation.
In addition, cyclic siloxane is anionically polymerized in the presence of a catalyst, and dimethylhydrochlorosilane, methyldihydrochlorosilane, dimethylhydroalkoxysilane or the like is used as a polymerization terminator, and other reaction conditions (for example, the amount of cyclic siloxane and polymerization termination). It can also be obtained by appropriately selecting the amount of the agent. Here, as the catalyst for anionic polymerization, alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or silanolate solution thereof can be used, and the reaction temperature is, for example, 80 to 130 ° C.

Such a hydroxyl group-containing polydimethylsiloxane preferably has a molecular weight Mw of 10,000 to 40,000. Further, from the viewpoint of heat resistance of the elastic anisotropic conductive film 50 to be obtained, those having a molecular weight distribution index of 2 or less are preferable.
In the present invention, either one of the above-mentioned vinyl group-containing polydimethylsiloxane and hydroxyl group-containing polydimethylsiloxane can be used, or both can be used in combination.

The polymer substance-forming material can contain a curing catalyst for curing the polymer substance-forming material. As such a curing catalyst, an organic peroxide, a fatty acid azo compound, a hydrosilylation catalyst, or the like can be used.
Specific examples of the organic peroxide used as the curing catalyst include benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide and ditertiary butyl peroxide.
Specific examples of the fatty acid azo compound used as the curing catalyst include azobisisobutyronitrile.
Specific examples of what can be used as a catalyst for the hydrosilylation reaction include chloroplatinic acid and salts thereof, platinum-unsaturated siloxane complex, vinylsiloxane and platinum complex, platinum and 1,3-divinyltetramethyldisiloxane. And the like, a complex of triorganophosphine or phosphite and platinum, an acetyl acetate platinum chelate, a complex of cyclic diene and platinum, and the like.
The amount of the curing catalyst used is appropriately selected in consideration of the type of polymer substance-forming material, the type of curing catalyst, and other curing conditions, but usually 3 to 100 parts by weight of the polymer substance-forming material. 15 parts by weight.

In the formation of the elastic anisotropic conductive film 50, the conductive particles P contained in the connection conductive portion 52 in the elastic anisotropic conductive film 50 are included in the molding material for forming the elastic anisotropic conductive film 50. From the viewpoint that the conductive particles P can be easily moved, it is preferable to use those showing magnetism. Specific examples of such conductive particles P exhibiting magnetism include metal particles exhibiting magnetism such as iron, nickel and cobalt, particles of these alloys, particles containing these metals, or cores of these particles. Particles with the surface of the core particles plated with a metal having good conductivity such as gold, silver, palladium, rhodium, or inorganic substance particles such as non-magnetic metal particles or glass beads, or polymer particles are used as core particles. The surface of the core particle is plated with a conductive magnetic material such as nickel or cobalt, or the core particle is coated with both a conductive magnetic material and a metal having good conductivity. It is done.
Among these, it is preferable to use nickel particles as core particles and the surfaces thereof plated with a metal having good conductivity such as gold or silver.
The means for coating the surface of the core particles with the conductive metal is not particularly limited, but can be performed by, for example, electroless plating.

In the case of using the conductive particles P in which the surface of the core particles is coated with a conductive metal, from the viewpoint of obtaining good conductivity, the coverage of the conductive metal on the particle surface (surface area of the core particles). The ratio of the covering area of the conductive metal with respect to is preferably 40% or more, more preferably 45% or more, and particularly preferably 47 to 95%.
The coating amount of the conductive metal is preferably 2.5 to 50% by weight of the core particles, more preferably 3 to 45% by weight, still more preferably 3.5 to 40% by weight, and particularly preferably 5%. ~ 30% by weight.

Moreover, it is preferable that the particle diameter of the electroconductive particle P is 1-500 micrometers, More preferably, it is 2-400 micrometers, More preferably, it is 5-300 micrometers, Most preferably, it is 10-150 micrometers.
Moreover, it is preferable that the particle diameter distribution (Dw / Dn) of the electroconductive particle P is 1-10, More preferably, it is 1-7, More preferably, it is 1-5, Most preferably, it is 1-4.
By using the conductive particles P satisfying such conditions, the obtained elastic anisotropic conductive film 50 can be easily deformed under pressure, and the connecting conductive portion 52 in the elastic anisotropic conductive film 50 can be obtained. In this case, sufficient electrical contact can be obtained between the conductive particles P.
The conductive particles P having such an average particle diameter are prepared by classifying the conductive particles and / or the core particles forming the conductive particles with a classifier such as an air classifier or a sonic sieve. be able to. Specific conditions for the classification treatment are appropriately set according to the average particle size and particle size distribution of the target conductive particles, the type of the classification device, and the like.
Further, the shape of the conductive particles P is not particularly limited, but spherical particles, star-shaped particles, or agglomerated particles 2 can be easily dispersed in the polymer substance-forming material. It is preferable that it is a lump with secondary particles.

  The moisture content of the conductive particles P is preferably 5% or less, more preferably 3% or less, still more preferably 2% or less, and particularly preferably 1% or less. By using the conductive particles P that satisfy such conditions, bubbles are prevented or suppressed from being generated in the molding material layer when the molding material layer is cured.

Moreover, what processed the surface of the electroconductive particle P with coupling agents, such as a silane coupling agent, can be used suitably. By treating the surface of the conductive particles P with a coupling agent, the adhesiveness between the conductive particles P and the elastic polymer substance is increased, and as a result, the obtained elastic anisotropic conductive film 50 is repeatedly formed. Durability in use is high.
The amount of the coupling agent used is appropriately selected within a range that does not affect the conductivity of the conductive particles P, but the coupling agent coverage on the surface of the conductive particles P (the cup relative to the surface area of the conductive core particles). The ratio of the ring agent covering area) is preferably 5% or more, more preferably 7 to 100%, further preferably 10 to 100%, and particularly preferably 20 to 100%. Amount.

  The content ratio of the conductive particles P in the connection conductive portion 52 of the functional portion 51 is preferably 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive portion 52 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained conductive part 52 for connection tends to be fragile, and the elasticity necessary for the conductive part 52 for connection may not be obtained.

In the polymer substance-forming material, an inorganic filler such as normal silica powder, colloidal silica, airgel silica, alumina, or the like can be contained as necessary. By including such an inorganic filler, the thixotropy of the obtained molding material is ensured, the viscosity thereof is increased, and the dispersion stability of the conductive particles P is improved, and the obtained molding material is cured. The strength of the elastic anisotropic conductive film 50 is increased.
The amount of such inorganic filler used is not particularly limited, but if it is used too much, movement of the conductive particles P due to a magnetic field is greatly hindered in the production method described later, which is not preferable.

  Such an anisotropic conductive connector 40 can be manufactured, for example, by a method described in JP-A-2002-334732.

In the probe card 30 of the first example, each of the positioning holes (not shown) of the frame plate 41 in the anisotropic conductive connector 40 and the positioning holes (not shown) of the support film 11 in the sheet-like probe 10 are provided. By inserting the guide pin 33 of the inspection circuit board 31, the anisotropic conductive connector 40 is connected to each of the connecting conductive portions 52 in each elastic anisotropic conductive film 50 and the inspection electrode 32 of the inspection circuit board 31. The sheet-like probe 10 is disposed on the surface of the anisotropic conductive connector 40, and each of the electrode structures 17 in the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40 is disposed on the surface of the anisotropic conductive connector 40. It arrange | positions so that each of the electroconductive part 52 for a connection may be contact | connected.
Further, in the probe card 30 of this example, the guide pin 33 is configured to be elastically compressible in the length direction thereof, and the sheet-like probe 30 is supported by the guide pin 33 so that the inspection is performed. It can be displaced in a direction approaching the circuit board 31 (downward in FIG. 16).

According to the probe card 30 of the first example as described above, since the sheet-like probe 10 of the first example described above is included, in the burn-in test, the positional deviation between the electrode structure 17 and the electrode to be inspected due to a temperature change is detected. It can be surely prevented.
Further, each of the openings 42 of the frame plate 41 in the anisotropic conductive connector 40 is formed corresponding to an electrode region in which an electrode to be inspected of an integrated circuit is formed on a wafer to be inspected. The elastic anisotropic conductive film 50 disposed in each may have a small area, and the elastic anisotropic conductive film 50 having a small area has a small absolute amount of thermal expansion in the surface direction. As a result of the thermal expansion in the surface direction being reliably regulated by the frame plate 41, it is possible to reliably prevent the displacement of the connecting conductive portion 52 from the electrode structure 17 and the inspection electrode 32 due to temperature changes.
Therefore, even when the wafer to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes to be inspected is extremely small, it is possible to stably maintain a good electrical connection state to the wafer in the burn-in test. it can.

FIG. 19 is an explanatory cross-sectional view showing the configuration of the second example of the probe card according to the present invention.
The probe card 30 of the second example is used for performing a probe test of each integrated circuit on a wafer on which a plurality of integrated circuits are formed, for example, in the state of the wafer. And the anisotropic conductive connector 40 provided on one surface of the inspection circuit board 31 and the sheet-like probe 10 of the second example provided on the anisotropic conductive connector 40. .

The inspection circuit board 31 has guide pins 33 for positioning the anisotropic conductive connector 40 and the sheet-like probe 10, and is formed on one surface of the inspection circuit board 31 on the wafer to be inspected. In the integrated circuit, for example, a plurality of inspection electrodes 32 are formed according to a pattern corresponding to the pattern of the electrodes to be inspected in 32 (8 × 4) integrated circuits. Other configurations of the inspection circuit board 31 are the same as those of the inspection circuit board 31 in the probe card 30 of the first example.
As shown in FIG. 20, the anisotropic conductive connector 40 includes a rectangular plate-like frame plate 41 in which a plurality of openings 42 extending through the thickness direction are formed. The opening 42 of the frame plate 41 corresponds to a pattern of an electrode region in which electrodes to be inspected in, for example, 32 (8 × 4) integrated circuits formed on a wafer to be inspected. Is formed. A plurality of elastic anisotropic conductive films 50 having conductivity in the thickness direction are arranged on the frame plate 41 in a state of being supported by the opening edge portions of the frame plate 41 so as to block the one opening 42. . Other configurations of the anisotropic conductive connector 40 are the same as those of the anisotropic conductive connector 40 in the probe card 30 of the first example (see FIG. 17).
In the probe card 30 of the second example, the anisotropic conductive connector 40 is connected to the surface of the inspection circuit board 31 and each of the connection conductive portions 52 of the elastic anisotropic conductive film 50 is connected to the inspection circuit board. The guide pins 33 of the test circuit board 31 are inserted into the positioning holes (not shown) of the support film 11 in the sheet-like probe 10. Thus, the sheet-like probe 10 is disposed such that each of the electrode structures 17 is in contact with each of the connection conductive portions 52 in the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40.
Further, in the probe card 30 of this example, the guide pin 33 is configured to be elastically compressible in the length direction thereof, and the sheet-like probe 30 is supported by the guide pin 33 so that the inspection is performed. It can be displaced in a direction approaching the circuit board 31 (downward in FIG. 19).

According to the probe card 30 of the second example as described above, since the sheet-like probe 10 of the second example described above is included, in the probe test, the positional deviation between the electrode structure 17 and the electrode to be inspected due to a temperature change is detected. It can be surely prevented.
Further, each of the openings 42 of the frame plate 41 in the anisotropic conductive connector 40 is formed corresponding to an electrode region in which an electrode to be inspected of an integrated circuit is formed on a wafer to be inspected. The elastic anisotropic conductive film 50 disposed in each may have a small area, and the elastic anisotropic conductive film 50 having a small area has a small absolute amount of thermal expansion in the surface direction. As a result of the thermal expansion in the surface direction being reliably regulated by the frame plate 41, it is possible to reliably prevent the displacement of the connecting conductive portion 52 from the electrode structure 17 and the inspection electrode 32 due to temperature changes.
Therefore, even when the wafer to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes to be inspected is extremely small, it is possible to stably maintain a good electrical connection state to the wafer in the probe test. it can.
Further, since the contact film 15 in the sheet-like probe 10 is formed so as to protrude from both surfaces of the support film 11, the wafer disposed on the front surface side of the sheet-like probe 10 and the back surface side of the sheet-like probe 10. As a result of preventing the support film 11 from becoming an obstacle in electrical connection to each of the anisotropically conductive connectors to be arranged, a favorable connection state can be reliably achieved.

[Wafer inspection equipment]
FIG. 21 is a cross-sectional view for explaining the outline of the configuration of the first example of the wafer inspection apparatus according to the present invention. This wafer inspection apparatus is configured to integrate each of a plurality of integrated circuits formed on the wafer. This is for performing the burn-in test of the circuit in a batch on the wafer.
The wafer inspection apparatus of the first example includes the probe card 30 of the first example in order to make electrical connection between each of the electrodes 2 to be inspected of the wafer 1 to be inspected and a tester. A pressure plate 35 for pressing the probe card 30 downward is provided on the back surface of the inspection circuit board 31 in the probe card 30, and a wafer on which the wafer 1 to be inspected is placed below the probe card 30. A mounting table 36 is provided, and a heater 37 is connected to each of the pressure plate 35 and the wafer mounting table 36.

  In such a wafer inspection apparatus, the wafer 1 to be inspected is placed on the wafer placement table 36, and then the probe card 30 is pressed downward by the pressure plate 35, whereby the sheet-like probe 10 is obtained. Each of the surface electrode portions 17a in the electrode structure 17 is in contact with each of the electrodes 2 to be inspected of the wafer 1, and each of the electrodes 2 to be inspected of the wafer 1 is pressurized by each of the surface electrode portions 17a. Is done. In this state, the sheet-like probe 10 is relatively displaced in a direction approaching the inspection circuit board 31 (upward in FIG. 2), and the anisotropic conductive film 50 is connected to the anisotropic conductive film 50. Each of the conductive portions 52 is compressed by the thickness direction by being sandwiched between the inspection electrode 32 of the inspection circuit board 31 and the surface electrode portion 17a of the electrode structure 17 of the sheet-like probe 10, A conductive path is formed in the connecting conductive portion 52 in the thickness direction, and as a result, electrical connection between the inspected electrode 2 of the wafer 1 and the inspecting electrode 32 of the inspecting circuit board 31 is achieved. Thereafter, the wafer 1 is heated to a predetermined temperature by the heater 37 via the wafer mounting table 36 and the pressure plate 35, and in this state, a required electrical inspection is performed on each of the plurality of integrated circuits on the wafer 1. Is done.

  According to the wafer inspection apparatus of the first example as described above, the electrical connection of the wafer 1 to be inspected to the inspection target electrode 2 is achieved via the probe card 30 of the first example. However, even if the electrode 2 to be inspected has a large area with a diameter of 8 inches or more and the pitch of the electrodes 2 to be inspected is extremely small, a good electrical connection state to the wafer 1 can be stably maintained in the burn-in test. The required electrical inspection can be reliably performed for each of the plurality of integrated circuits.

FIG. 22 is a cross-sectional view for explaining the outline of the configuration of the second example of the wafer inspection apparatus according to the present invention. This wafer inspection apparatus performs integration for each of a plurality of integrated circuits formed on the wafer. This is for performing a probe test of a circuit in a wafer state.
The wafer inspection apparatus of the second example has the same configuration as the wafer inspection apparatus of the first example except that the probe card 30 of the second example is used instead of the probe card 30 of the first example. is there.
In the wafer inspection apparatus of the second example, the probe card 30 is electrically connected to the inspection target electrodes of, for example, 32 integrated circuits selected from all the integrated circuits formed on the wafer, and the inspection is performed. After that, by repeating the process of electrically connecting the probe card 30 to the electrodes to be inspected of the plurality of integrated circuits selected from other integrated circuits and performing the inspection, all the elements formed on the wafer are An integrated circuit probe test is performed.
According to the wafer inspection apparatus of the second example as described above, since the electrical connection of the wafer 1 to be inspected to the inspection target electrode 2 is achieved via the probe card 30 of the second example, the wafer 1 However, even if the electrode 2 to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes 2 to be inspected is extremely small, a good electrical connection to the wafer 1 can be stably maintained in the probe test. The required electrical inspection can be performed reliably for each of the plurality of integrated circuits.

The present invention is not limited to the above embodiment, and various modifications can be made as follows.
(1) The use of the sheet-like probe and the probe card is not limited to the wafer inspection apparatus, but can be applied to an inspection apparatus for circuit devices such as package ICs such as BGA and CSP and MCM, and such probes. An inspection device for a circuit device including a card can be configured.
(2) In the sheet-like probe 10, as shown in FIG. 23, a ring-shaped holding member 14 may be provided on the peripheral edge of the support film 11.
Examples of the material constituting the holding member 14 include Invar type alloys such as Invar and Super Invar, Elinvar type alloys such as Elinvar, low thermal expansion metal materials such as Kovar and 42 alloy, or alumina, silicon carbide, silicon nitride, and the like. The ceramic material can be used.
(3) The elastic anisotropic conductive film 50 in the anisotropic conductive connector 40 is not electrically connected to the electrode to be inspected in addition to the connection conductive portion 52 formed according to the pattern corresponding to the pattern of the electrode to be inspected. A conductive portion for non-connection may be formed.
(4) In the manufacturing process of the sheet-like probe 10, instead of forming the adhesive layer 19 on the entire other surface of the metal foil 18 </ b> A for the back electrode portion in the laminate 15 </ b> A, as shown in FIG. You may form the contact bonding layer 19 only in the area | region adhere | attached on the support film 11 in the metal foil 18A for electrode parts. According to such a method, after the support film 11 is bonded, there is no or almost no adhesive layer 19 in the portion exposed from the opening 12 of the support film 11 in the laminate 15A. The step of removing a part of the substrate can be omitted or can be easily performed.

It is a top view which shows the 1st example of the sheet-like probe which concerns on this invention. It is a top view which expands and shows the contact film of the sheet-like probe of the 1st example. It is sectional drawing for description which expands and shows the structure of the contact film of the sheet-like probe of a 1st example. It is a top view which shows the support film in the sheet-like probe of a 1st example. It is sectional drawing for description which shows the structure of the laminated body used in order to manufacture the sheet-like probe of this invention. It is sectional drawing for description which shows the state by which the protective tape is arrange | positioned at the peripheral part of the support film. It is sectional drawing for description which shows the state by which the contact bonding layer was formed in the metal foil for back surface electrode parts in the laminated body shown in FIG. It is sectional drawing for description which shows the state by which the support film was adhere | attached on the metal foil for back surface electrode parts in a laminated body. It is sectional drawing for description which shows the state by which the through-hole was formed in the resin sheet for insulating films in a laminated body. It is sectional drawing for description which shows the state by which the short circuit part and the surface electrode part were formed in the resin sheet for insulating films. It is sectional drawing for description which shows the state from which a part of contact bonding layer was removed and the metal foil for back surface electrode parts was exposed. It is sectional drawing for description which shows the state in which the back surface electrode part was formed. It is sectional drawing for description which shows the state in which the insulating film was formed. It is a top view which shows the 2nd example of the sheet-like probe which concerns on this invention. It is a top view which shows the support film in the sheet-like probe of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card of a 1st example. It is a top view which shows the anisotropically conductive connector in the probe card of a 1st example. It is sectional drawing for description which shows the structure of the 2nd example of the probe card based on this invention. It is a top view which shows the anisotropically conductive connector in the probe card of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the wafer inspection apparatus which concerns on this invention. It is sectional drawing for description which shows the structure of the 2nd example of the wafer inspection apparatus which concerns on this invention. It is a top view which shows the other example of the sheet-like probe which concerns on this invention. It is sectional drawing for description which shows the state in which the contact bonding layer was formed only in the area | region adhere | attached on the support film in the metal foil for back surface electrode parts of a laminated body. It is sectional drawing for description which shows the structure of the conventional sheet-like probe.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer 2 Electrode to be inspected 10 Sheet-like probe 11 Support film 12 Opening 13 Positioning hole 14 Holding member 15 Contact film 15A Laminated body 16 Insulating film 16A Resin sheet for insulating film 17 Electrode structure 17H Through-hole 17a Surface electrode part 17b Back surface electrode Part 17c Short-circuit part 18 Metal film 18A Metal foil 19 for back electrode part Adhesive layer 20 Protection tape 30 Probe card 31 Inspection circuit board 32 Inspection electrode 33 Guide pin 35 Pressure plate 36 Wafer mounting table 37 Heater 40 Anisotropic conductivity Connector 41 Frame plate 42 Opening 50 Elastic anisotropic conductive film 51 Functional part 52 Connecting conductive part 53 Insulating part 54 Protruding part 55 Supported part 90 Sheet-like probe 91 Insulating sheet 92 Holding member 95 Electrode structure 96 Surface electrode part 97 Back electrode part 98 Short-circuit part P Conductive particle

Claims (8)

A support film made of a metal having a plurality of openings formed therein and a plurality of contact films arranged and supported by the support film so as to close the openings, each of which is made of a flexible resin. The insulating film and the surface electrode portion exposed on the surface of the insulating film and the back electrode portion exposed on the back surface, which are arranged and held in accordance with a pattern corresponding to the electrode to be connected to the insulating film, are in the thickness direction of the insulating film. A method of manufacturing a sheet-like probe comprising a plurality of electrode structures connected by a short-circuit portion extending to
Prepare a laminate in which a resin sheet for insulating film is integrally laminated on one surface of the metal foil for the back electrode part,
A support film in which a plurality of openings is formed is adhered to the other surface of the metal foil for the back electrode portion in the laminate, and the insulating film resin sheet in the laminate corresponds to the pattern of the electrode structure to be formed. A plurality of through holes are formed according to a pattern, and a short circuit portion connected to the metal foil for the back electrode portion is formed in each through hole of the insulating film resin sheet by plating the laminate. And forming a surface electrode portion connected to the short-circuit portion,
Then, the manufacturing method of the sheet-like probe characterized by having the process of forming the back surface electrode part connected with the short circuit part by etching the metal foil for back surface electrode parts in the said laminated body.   2. The method for manufacturing a sheet-like probe according to claim 1, wherein the insulating film resin sheet is made of an etchable resin, and the through hole is formed in the insulating film resin sheet by an etching process.   The method for manufacturing a sheet-like probe according to claim 2, wherein after forming the back electrode portion, a plurality of insulating films are formed on the insulating film resin sheet by etching.   The method for manufacturing a sheet-like probe according to any one of claims 1 to 3, wherein the resin sheet for insulating film is made of polyimide. ^{5. The} method for producing a sheet-like probe according to claim 1, wherein the linear thermal expansion coefficient of the support film is 3 × 10 ⁻⁵ / K or less.   A sheet-like probe manufactured by the method according to any one of claims 1 to 5. For each of a plurality of integrated circuits formed on a wafer, a probe card used for performing an electrical inspection of the integrated circuit in a wafer state,
An inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the pattern of the inspected electrode of the integrated circuit on the wafer to be inspected, and an anisotropic conductive connector disposed on the surface of the inspection circuit board And a sheet-like probe according to claim 6 disposed on the anisotropic conductive connector. A wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
A wafer inspection apparatus comprising the probe card according to claim 7.

Images