JP2006105851A - Sheet-like probe, its manufacturing method, and its application - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sheet-like probe for stably maintaining a good electric connection state by surely preventing displacement between an electrode structure and an electrode to be inspected due to temperature change even when an inspection object is a circuit device in which the diameter of a wafer of a large area is 8 inches or larger and the pitch of the electrode to be inspected is very small, and to provide its manufacturing method and its application. <P>SOLUTION: The sheet-like probe comprises forming a plurality of insulation films by hardening to form a material layer for the insulation film comprising a liquid-like resin material of a shape corresponding to the insulation film to be formed on the support film on a metal foil for a rear face electrode part so as to block each opening of a support film, forming a short circuit part and a surface electrode part connected to it by plating to form a through hole of a pattern corresponding to the electrode structure to be formed on the insulation film, and being obtained by etching the metal foil for the back electrode part and forming the back electrode part. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a sheet-like probe used for electrical inspection of a circuit device, a manufacturing method thereof, and its application. More specifically, for example, in order to perform electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state. The present invention relates to a sheet-like probe used, a manufacturing method thereof, and an application thereof.

For example, in an electrical inspection of a circuit device such as a wafer on which a large number of integrated circuits are formed or an electronic component such as a semiconductor element, the inspection is arranged according to a pattern corresponding to the pattern of the electrode to be inspected of the circuit device under inspection A probe card having electrodes is used. As such a probe card, one in which inspection electrodes (inspection probes) made of pins or blades are arranged has been used.
However, when the circuit device to be inspected is a wafer on which a large number of integrated circuits are formed, it is necessary to arrange a large number of inspection probes in order to produce a probe card for the wafer inspection. The probe card is extremely expensive, and when the pitch of the electrodes to be inspected is small, it is difficult to produce the probe card itself. Further, since the wafer is generally warped, and the state of the warp varies depending on the product (wafer), each of the inspection probes of the probe card can be stably attached to a large number of inspection electrodes on the wafer. It is practically difficult to ensure contact.

  For the reasons described above, recently, an inspection circuit board in which a plurality of inspection electrodes are formed according to a pattern corresponding to the pattern of the electrode to be inspected on one surface, and the inspection circuit board are arranged on one surface. A probe comprising an anisotropic conductive sheet, and a sheet-like probe arranged on the anisotropic conductive sheet, in which a plurality of electrode structures extending through the insulating sheet in the thickness direction are arranged. Cards have been proposed (see, for example, Patent Document 1 and Patent Document 2).

  The sheet-like probe in the probe card will be specifically described. As shown in FIG. 22, this sheet-like probe 90 has a flexible circular insulating sheet 91 made of a resin such as polyimide, for example. On the sheet 91, a plurality of electrode structures 95 extending in the thickness direction are arranged according to a pattern corresponding to the pattern of the electrode to be inspected of the circuit device to be inspected. Each of the electrode structures 95 includes a protruding surface electrode portion 96 exposed on the surface of the insulating sheet 91 and a plate-like back surface electrode portion 97 exposed on the back surface of the insulating sheet 91. Are integrally connected via a short-circuit portion 98 that extends through in the thickness direction. In addition, a ring-shaped holding member 92 made of, for example, ceramics is provided on the peripheral edge of the insulating sheet 91. This holding member 92 is for controlling the thermal expansion in the surface direction of the insulating sheet 91, thereby preventing the displacement of the electrode structure 95 and the electrode to be inspected due to a temperature change in the burn-in test. Is done.

However, such a sheet-like probe has the following problems.
For example, in a wafer having a diameter of 8 inches or more, 5000 or 10,000 or more electrodes to be inspected are formed, and the pitch of the electrodes to be inspected is 160 μm or less. A sheet-like probe for inspecting such a wafer has a large area corresponding to the wafer, and has 5000 or 10,000 or more electrode structures arranged at a pitch of 160 μm or less. Must be used.
Thus, the linear thermal expansion coefficient of the material constituting the wafer, such as silicon, is about 3.3 × 10 ⁻⁶ / K, while the material constituting the insulating sheet in the sheet-like probe, such as the linear thermal expansion coefficient of polyimide. Is about 4.5 × 10 ⁻⁵ / K. Therefore, for example, when each of a wafer and a sheet-like probe each having a diameter of 30 cm at 25 ° C. is heated from 20 ° C. to 120 ° C., the change in the diameter of the wafer is theoretically only 99 μm, but the sheet The change in the diameter of the insulating sheet in the probe has reached 1350 μm, and the difference in thermal expansion between them is 1251 μm.
As described above, when a large difference occurs in the absolute amount of thermal expansion in the surface direction between the wafer and the insulating sheet in the sheet-like probe, the peripheral portion of the insulating sheet is a line equivalent to the linear thermal expansion coefficient of the wafer. Even if it is fixed by a holding member having a thermal expansion coefficient, it is difficult to reliably prevent displacement between the electrode structure and the electrode to be inspected due to temperature change in the burn-in test. It cannot be kept stable.
In addition, even if the inspection target is a small circuit device, if the pitch of the electrodes to be inspected is 50 μm or less, the burn-in test may cause misalignment between the electrode structure and the electrodes to be inspected due to temperature changes. Since it is difficult to prevent reliably, a good electrical connection state cannot be stably maintained.

For such a problem, Patent Document 1 proposes a means for relaxing the thermal expansion of the insulating sheet by fixing it to the holding member in a state where tension is applied to the insulating sheet. .
However, in such a means, it is extremely difficult to apply a uniform tension to all directions in the surface direction of the insulating sheet, and the insulating sheet is formed by forming an electrode structure. The balance of the acting tension changes, and as a result, the insulating sheet has anisotropy with respect to thermal expansion, so even if it is possible to suppress the thermal expansion in the-direction in the plane direction, The thermal expansion in the other direction that intersects with one direction cannot be suppressed, and eventually the positional deviation between the electrode structure and the electrode to be inspected due to the temperature change cannot be prevented.
Further, in order to fix the insulating sheet to the holding member in a state in which tension is applied thereto, a complicated process of adhering the insulating sheet to the holding member under heating is necessary. There is a problem of causing an increase.

Japanese Patent Laid-Open No. 2001-15565 Japanese Patent Laid-Open No. 2002-184821

The present invention has been made on the basis of the above circumstances, and a first object of the present invention is a circuit in which a test target is a large area wafer having a diameter of 8 inches or more and a circuit having a very small pitch of electrodes to be inspected. Even in the case of the apparatus, it is possible to reliably prevent the positional deviation between the electrode structure and the electrode to be inspected due to a temperature change, and therefore it is possible to stably maintain a good electrical connection state and the probe It is to provide a manufacturing method.
The second object of the present invention is to stably maintain a good electrical connection state even if the object to be inspected is a large-area wafer having a diameter of 8 inches or more or a circuit device in which the pitch of electrodes to be inspected is extremely small. It is to provide a probe card that can be used.
A third object of the present invention is to provide an inspection device for a circuit device comprising the above probe card.
A fourth object of the present invention is to provide a wafer inspection apparatus provided with the above probe card.
A fifth object of the present invention is to provide a wafer inspection method using the above probe card.

  The sheet-like probe manufacturing method of the present invention includes a support film made of a metal having a plurality of openings formed therein, and a plurality of contact films arranged and supported by the support film so as to close the openings, respectively. Each of the contact films is formed on a surface electrode portion and a back surface exposed on the surface of the insulating film, which are arranged and held in accordance with a pattern corresponding to an insulating film made of a flexible resin and an electrode to be connected to the insulating film. A method of manufacturing a sheet-like probe comprising a plurality of electrode structures in which exposed back electrode portions are connected by a short-circuit portion extending in a thickness direction of an insulating film, wherein the support is provided on a metal foil for a back electrode portion An insulating film material layer made of a liquid resin material having a shape corresponding to the shape of the insulating film to be formed is formed on the film so as to close each opening of the support film, and each of the insulating film material layers By curing, a plurality of insulating films supported by the support film are formed, and through holes are formed in the insulating film according to a pattern corresponding to the pattern of the electrode structure to be formed. By plating the foil, a short-circuit portion connected to the metal foil for the back electrode portion is formed in the through hole of the insulating film, and a surface electrode portion connected to the short-circuit portion is formed. Then, the back electrode part connected to the short circuit part is formed by etching the metal foil for the back electrode part.

In the method for manufacturing a sheet-like probe of the present invention, the insulating film is made of an etchable resin, and a through hole is preferably formed in the insulating film by an etching process. In particular, the insulating film is preferably made of polyimide.
In the method for manufacturing a sheet-like probe according to the present invention, a spacer in which a plurality of openings having a shape conforming to the planar shape of the insulating film to be formed is formed on one or both of one surface and the other surface of the support film. It is preferable to form an insulating film forming space partitioned by the opening of the support film and the opening of the spacer, and to form the insulating film material layer in the insulating film forming space.
In the method for producing a sheet-like probe of the present invention, the linear thermal expansion coefficient of the support membrane is preferably 3 × 10 ⁻⁵ / K or less.

  The sheet-like probe of the present invention is manufactured by the above method.

  Further, the sheet-like probe of the present invention is supported by a support film made of a metal having a plurality of openings, and disposed on the support film so as to protrude from both surfaces and close one opening of the support film. Each of the contact films is arranged and held in accordance with a pattern corresponding to an insulating film made of a flexible resin and an electrode to be connected to the insulating film, respectively. The surface electrode portion exposed on the surface and the back electrode portion exposed on the back surface are composed of a plurality of electrode structures connected by a short-circuit portion extending in the thickness direction of the insulating film.

  The probe card of the present invention comprises the above-mentioned sheet-like probe.

Further, the probe card of the present invention is a probe card used for performing an electrical inspection of the integrated circuit in the state of the wafer for each of the plurality of integrated circuits formed on the wafer,
An inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the pattern of the inspected electrode of the integrated circuit on the wafer to be inspected, and an anisotropic conductive connector disposed on the surface of the inspection circuit board And the above-described sheet-like probe disposed on the anisotropic conductive connector.

  An inspection device for a circuit device according to the present invention comprises the probe card described above.

The wafer inspection apparatus of the present invention is a wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
It comprises the above probe card.

  In the wafer inspection method of the present invention, each of the plurality of integrated circuits formed on the wafer is electrically connected to the tester via the probe card, and the integrated circuit formed on the wafer is electrically inspected. It is characterized by doing.

According to the sheet-like probe of the present invention, the contact film having the electrode structure is disposed and supported in each of the plurality of openings formed in the support film, so that each of the contact films has a small area. Well, a contact film having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film. Therefore, even if the inspection target is a large-area wafer having a diameter of 8 inches or more or a circuit device in which the pitch of the electrodes to be inspected is extremely small, it is possible to reliably prevent the positional deviation between the electrode structure and the electrodes to be inspected due to temperature changes. Therefore, it is possible to stably maintain a good electrical connection state.
In addition, since the contact film is formed so as to protrude from each of both surfaces of the support film, the test object disposed on the front surface side of the sheet probe and the member disposed on the back surface side of the sheet probe As a result of preventing the support film from becoming an obstacle in the electrical connection to each, a good connection state can be reliably achieved.
According to the method for manufacturing a sheet-like probe according to the present invention, even if the object to be inspected is a large-area wafer having a diameter of 8 inches or more or a circuit device in which the pitch of electrodes to be inspected is extremely small, the electrode structure due to temperature change Therefore, it is possible to manufacture a sheet-like probe in which the positional deviation between the electrode and the electrode to be inspected is reliably prevented, and thus a good electrical connection state is stably maintained.
According to the probe card according to the present invention, even when the inspection target is a large-area wafer having a diameter of 8 inches or more or a circuit device having a very small pitch of the electrodes to be inspected, a good electrical connection state is stably maintained. can do.
Such a probe card includes a wafer inspection apparatus for performing an electrical inspection of a large area wafer having a diameter of 8 inches or more, and an inspection apparatus for performing an electrical inspection of a circuit device having a very small pitch of electrodes to be inspected. It is extremely suitable as a probe card used in the above.

Hereinafter, embodiments of the present invention will be described in detail.
<Sheet probe>
FIG. 1 is a plan view showing a first example of a sheet-like probe according to the present invention, FIG. 2 is an enlarged plan view showing a contact film in the sheet-like probe of the first example, and FIG. It is sectional drawing for description which expands and shows the contact film in the sheet-like probe of the 1st example.
The sheet-like probe 10 according to the first example is used to collectively perform a burn-in test of each integrated circuit in a wafer state on a wafer on which a plurality of integrated circuits are formed. As shown also in FIG. 4, it has the support film 11 which consists of a metal in which several opening was formed. The openings 12 of the support film 11 are formed corresponding to the pattern of the electrode region where the electrodes to be inspected are formed in all the integrated circuits formed on the wafer to be inspected. Further, the support film 11 in this example is formed with positioning holes 13 for positioning with an anisotropic conductive connector and an inspection circuit board, which will be described later.

As the metal constituting the support film 11, iron, copper, nickel, titanium, or an alloy or alloy steel thereof can be used. In the manufacturing method described later, the opening 12 can be easily formed by an etching process. In view of the capability, iron-nickel alloy steels such as 42 alloy, Invar, and Kovar are preferable.
In addition, as the support film 11, it is preferable to use one having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, more preferably from −1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ / K, particularly preferably. Is −1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of the material constituting the support film 11 include an Invar type alloy such as Invar, an Elinvar type alloy such as Elinvar, an alloy such as Super Invar, Kovar, and 42 alloy, or an alloy steel.

Moreover, it is preferable that the thickness of the support film 11 is 3-150 micrometers, More preferably, it is 5-100 micrometers.
When this thickness is too small, the strength required for the support film for supporting the contact film 15 may not be obtained. On the other hand, if this thickness is excessive, it may be difficult to form the opening 12 with high dimensional accuracy by etching in a manufacturing method described later.

A plurality of contact films 15 are arranged on the support film 11 so as to protrude from both surfaces of the support film 11 and close one opening 12 of the support film 11, and a peripheral portion of each of the contact films 15 The support film 11 is fixed and supported on both surfaces of the peripheral portion of the opening 12. As shown in FIG. 3, each of the contact films 15 has a flexible insulating film 16, and the insulating film 16 includes a plurality of electrode structures 17 made of metal extending in the thickness direction of the insulating film 16. According to the pattern corresponding to the pattern of the electrode to be inspected in the electrode region of the integrated circuit formed on the wafer to be inspected, the insulating film 16 is arranged away from each other in the plane direction. Each of the structures 17 is disposed so as to be located in the opening 12 of the support film 11.
Each of the electrode structures 17 includes a protruding surface electrode portion 18 a exposed on the surface of the insulating film 16 and a plate-shaped back surface electrode portion 18 b exposed on the back surface of the insulating film 16 in the thickness direction of the insulating film 16. They are integrally connected to each other by a short-circuit portion 18c extending therethrough.

The material constituting the insulating film 16 is not particularly limited as long as it is flexible and has insulating properties, and resin materials such as polyimide and liquid crystal polymer, and composite materials thereof can be used. In the manufacturing method, it is preferable to use polyimide in that the through holes for the electrode structure can be easily formed by etching.
As other materials constituting the insulating film 16, a mesh or a nonwoven fabric, or a material in which these are impregnated with a resin or an elastic polymer substance can be used. As fibers forming such a mesh or nonwoven fabric, aramid fibers, polyethylene fibers, polyarylate fibers, nylon fibers, fluororesin fibers such as Teflon (registered trademark) fibers, and organic fibers such as polyester fibers can be used. By using such a material as a material constituting the insulating film 16, even if the electrode structures 17 are arranged at a small pitch, the flexibility of the entire contact film 15 is not greatly reduced. Even if there is a variation in the protruding height of the electrode or the protruding height of the electrode to be inspected, the contact film 15 is sufficiently absorbed by the flexibility of the contact film 15, so that stable electrical connection to each of the electrodes to be inspected can be achieved reliably. can do.
The thickness of the insulating film 16 is not particularly limited as long as the flexibility of the insulating film 16 is not impaired, but is preferably 5 to 150 μm, more preferably 7 to 100 μm, and still more preferably 10 to 50 μm. .

  As a material constituting the electrode structure 17, nickel, iron, copper, gold, silver, palladium, iron, cobalt, tungsten, rhodium, or an alloy or alloy steel thereof can be used. May consist of a single metal as a whole, an alloy of two or more metals or alloy steel, or a laminate of two or more metals.

In addition, when an electrical inspection is performed on an electrode to be inspected having an oxide film formed on the surface, the electrode structure 17 of the sheet-like probe and the electrode to be inspected are brought into contact with each other and the surface electrode portion 18a of the electrode structure 17 covers the surface to be inspected. It is necessary to destroy the oxide film on the surface of the inspection electrode to achieve electrical connection between the electrode structure 17 and the electrode to be inspected. Therefore, it is preferable that the surface electrode portion 18a of the electrode structure 17 has such a hardness that the oxide film can be easily broken. In order to obtain such a surface electrode portion 18a, a powder material having high hardness can be contained in the metal constituting the surface electrode portion 18a.
As such a powder substance, diamond powder, silicon nitride, silicon carbide, ceramics, glass or the like can be used. By containing an appropriate amount of these non-conductive powder substances, the conductivity of the electrode structure 17 can be increased. Without damaging the structure, the surface electrode portion 18a of the electrode structure 17 can destroy the oxide film formed on the surface of the electrode to be inspected.
In addition, in order to easily destroy the oxide film on the surface of the electrode to be inspected, the shape of the surface electrode portion 18a in the electrode structure 17 is a sharp protrusion, or fine irregularities are formed on the surface of the surface electrode portion 18a. Or can be formed.

The pitch p of the electrode structures 17 in the contact film 15 is set according to the pitch of the electrodes to be inspected on the wafer to be inspected, and is preferably 40 to 250 μm, and more preferably 40 to 150 μm, for example.
Here, the “pitch of electrode structures” is the shortest distance between the centers of adjacent electrode structures.

In the electrode structure 17, the ratio of the protrusion height to the diameter R in the surface electrode portion 18a is preferably 0.2 to 3, and more preferably 0.25 to 2.5. By satisfying such conditions, even if the electrodes to be inspected have a small pitch and a minute one, the electrode structure 17 having a pattern corresponding to the pattern of the electrodes to be inspected can be easily formed. A stable electrical connection state can be reliably obtained for the wafer.
Moreover, it is preferable that the diameter R of the surface electrode part 18a is 1-3 times the diameter r of the short circuit part 18c, More preferably, it is 1-2 times.
Further, the diameter R of the surface electrode portion 18a is preferably 30 to 75%, more preferably 40 to 60% of the pitch p of the electrode structure 17.

The outer diameter L of the back electrode portion 18b may be larger than the diameter of the short-circuit portion 18c and smaller than the pitch p of the electrode structure 17, but is preferably as large as possible. Thus, for example, a stable electrical connection can be reliably achieved even for an anisotropic conductive sheet.
Moreover, it is preferable that the diameter r of the short circuit part 18c is 15 to 75% of the pitch p of the said electrode structure 17, More preferably, it is 20 to 65%.

The specific dimensions of the electrode structure 17 will be described. The protruding height of the surface electrode portion 18a is 15 to 50 μm in that stable electrical connection can be achieved with respect to the electrode to be inspected. Preferably, it is 15-30 micrometers.
The diameter R of the surface electrode portion 18a is set in consideration of the above conditions and the diameter of the electrode to be inspected, and is, for example, 30 to 200 μm, and preferably 35 to 150 μm.
The diameter r of the short-circuit portion 18c is preferably 10 to 120 μm, more preferably 15 to 100 μm, from the viewpoint that sufficiently high strength can be obtained.
The thickness of the back electrode part 18b is preferably 15 to 150 μm, more preferably 20 to 100 μm, in that the strength is sufficiently high and excellent repeated durability is obtained.

  A coating film may be formed on the front electrode portion 18a and the back electrode portion 18b in the electrode structure 17 as necessary. For example, when the electrode to be inspected is made of a solder material, the surface electrode portion 18a is coated with a diffusion-resistant metal such as silver, palladium, or rhodium from the viewpoint of preventing the solder material from diffusing. It is preferable to form a film.

The sheet-like probe of the present invention is manufactured as follows.
First, the support film 11 in which a plurality of openings 12 are formed corresponding to the pattern of the electrode region where the inspection target electrode of the integrated circuit is formed on the wafer to be inspected is manufactured.
As a method of forming the opening 12 of the support film 11, an etching method or the like can be used.

Next, as shown in FIG. 5, a back electrode part metal foil 20 made of the same material as the back electrode part 18 b in the electrode structure 17 to be formed is prepared and formed on the back electrode part metal foil 20. A back-side spacer 21 in which a plurality of openings 21K having a shape conforming to the planar shape on the back surface of the insulating film 16 to be formed is disposed, and the prepared support film 11 is aligned and disposed on the back-side spacer 21. Further, on the support film 11, a surface side spacer 22 in which a plurality of openings 22K having a shape conforming to a planar shape on the surface of the insulating film 16 to be formed is aligned and disposed. Thereby, on the metal foil 20 for the back electrode part, as shown in FIG. 6, the front side spacer 22 and the back side spacer 21 are provided on the front surface (upper surface in the drawing) and the back surface (lower surface in the drawing) of the support film 11. A plurality of insulating film moldings having a form corresponding to the insulating film 16 to be formed, which are arranged and defined by the respective openings 21K of the back surface side spacer 21, the respective openings 12 of the support film 11 and the respective openings 22K of the front surface side piper 22. A working space 16S is formed.
Thereafter, by injecting a liquid resin material into each of the insulating film forming spaces 16S, as shown in FIG. 7, each of the insulating film forming spaces 16S has a shape corresponding to the insulating film 16 to be formed. An insulating film material layer 16 </ b> A made of a liquid resin material is formed so as to close each opening 12 of the support film 11. Then, by curing each of the insulating film material layers 16A, as shown in FIG. 8, the support film 11 protrudes from both surfaces of the support film 11 and has one opening 12 of the support film 11. A plurality of insulating films 16 arranged so as to be closed are integrally supported on the back electrode portion metal foil 20 in a state where the peripheral portions are fixed and supported on both surfaces of the peripheral portion of the opening 12 in the support film 11. It is formed in a state where it is adhered to.
In the above, as the liquid resin material, a thermosetting liquid resin material or a radiation curable liquid resin material can be used.
Further, the curing treatment of the liquid resin material layer 16A is appropriately selected according to the type of the liquid resin material used, and for example, heat treatment or radiation irradiation treatment is used.

Next, as shown in FIG. 9, a plurality of through holes 17 </ b> H penetrating in the thickness direction are formed in the insulating film 16 according to a pattern corresponding to the pattern of the electrode structure 17 to be formed. Thereafter, the back electrode metal foil 20 is plated to be integrated with the back electrode metal foil 20 in each through hole 17H formed in the insulating film 16, as shown in FIG. The connected short circuit part 18c is formed, and the surface electrode part 18a protruding from the surface of the insulating film 16 integrally connected to the short circuit part 18c is formed. Thereafter, by performing an etching process on the metal foil 20 for the back electrode portion, as shown in FIG. 11, a plurality of back electrode portions 18b integrally connected to the short-circuit portion 18c are formed, and thus the electrode structure is formed. A body 17 is formed. And the sheet-like probe of the structure shown in FIG. 1 is obtained by removing the surface side spacer 22 and the back surface side spacer 21 from the surface and the back surface of the support film 11.
In the above, as a method for forming the through hole 17H in the insulating film 16, laser processing, etching processing, or the like can be used.
Moreover, as a plating process for forming the short-circuit part 18c and the surface electrode part 18a, an electrolytic plating process using the metal foil 20 for the back electrode part as a common electrode can be used.

According to the sheet-like probe 10 described above, the contact film 15 having the electrode structure 17 is disposed and supported in each of the plurality of openings 12 formed in the support film 11. A thing with a small area may be sufficient. Since the contact film 15 having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film 16, the inspection object is a large area wafer having a diameter of 8 inches or more and the pitch of the electrodes to be inspected is small. Even if it is extremely small, in the burn-in test, it is possible to reliably prevent the positional deviation between the electrode structure and the electrode to be inspected due to a temperature change, and thus it is possible to stably maintain a good electrical connection state. it can.
Further, since the contact film 15 is formed so as to protrude from both surfaces of the support film 11, a wafer disposed on the front surface side of the sheet-like probe 10 and a member disposed on the back surface side of the sheet-like probe 10. As a result of preventing the support film 11 from becoming an obstacle in the electrical connection to each, a good connection state can be reliably achieved.

FIG. 12 is a plan view showing a second example of the sheet-like probe according to the present invention.
The sheet-like probe 10 according to the second example is used for performing a probe test of each integrated circuit in a wafer state on a wafer on which a plurality of integrated circuits are formed, for example, as shown in FIG. As shown, it has a support film 11 made of metal with a plurality of openings. The openings 12 of the support film 11 correspond to the pattern of the electrode region where the electrodes to be inspected are formed in, for example, 32 (8 × 4) integrated circuits formed on the wafer to be inspected. Is formed. Further, in the support film 11 in this example, a positioning hole 13 for positioning with an inspection circuit board to be described later is formed. Other configurations of the sheet-like probe 10 of the second example are the same as those of the sheet-like probe 10 of the first example (see FIGS. 2 and 3).
The sheet-like probe 10 of the second example can be manufactured in the same manner as the first sheet-like probe 10.

According to the sheet-like probe 10 described above, the contact film 15 having the electrode structure 17 is disposed and supported in each of the plurality of openings 12 formed in the support film 11. A thing with a small area may be sufficient. Since the contact film 15 having a small area has a small absolute amount of thermal expansion in the surface direction of the insulating film 16, the inspection object is a large area wafer having a diameter of 8 inches or more and the pitch of the electrodes to be inspected is small. Even if it is extremely small, it is possible to reliably prevent displacement between the electrode structure and the electrode to be inspected due to a temperature change in the probe test, and thus it is possible to stably maintain a good electrical connection state. it can.
Further, since the contact film 15 is formed so as to protrude from both surfaces of the support film 11, a wafer disposed on the front surface side of the sheet-like probe 10 and a member disposed on the back surface side of the sheet-like probe 10. As a result of preventing the support film 11 from becoming an obstacle in the electrical connection to each, a good connection state can be reliably achieved.

<Probe card>
FIG. 14 is an explanatory cross-sectional view showing the configuration of the first example of the probe card according to the present invention, and FIG. 15 is an explanatory cross-sectional view showing the configuration of the main part of the probe card of the first example. .
The probe card 30 of the first example is used for performing a burn-in test of each of the integrated circuits in a batch on a wafer on which a plurality of integrated circuits are formed, for example, for inspection. A circuit board 31, an anisotropic conductive connector 40 provided on one surface of the circuit board 31 for inspection, and a sheet-like probe 10 of the first example provided on the anisotropic conductive connector 40. Has been.

The inspection circuit board 31 has guide pins 33 for positioning the anisotropic conductive connector 40 and the sheet-like probe 10, and is formed on one surface of the inspection circuit board 31 on the wafer to be inspected. A plurality of inspection electrodes 32 are formed according to a pattern corresponding to the pattern of the electrodes to be inspected in all integrated circuits.
As a substrate material constituting the inspection circuit board 31, various conventionally known substrate materials can be used. Specific examples thereof include a glass fiber reinforced epoxy resin, a glass fiber reinforced phenol resin, and a glass fiber reinforced type. Composite resin substrate material such as polyimide resin, glass fiber reinforced bismaleimide triazine resin, ceramic substrate material such as glass, silicon dioxide, alumina, etc., laminated substrate material in which resin such as epoxy resin or polyimide resin is laminated using metal plate as core material Etc.
When a probe card for use in the burn-in test is configured, it is preferable to use one having a linear thermal expansion coefficient of 3 × 10 ⁻⁵ / K or less, more preferably 1 × 10 ⁻⁷ to 1 × 10. ⁻⁵ / K, particularly preferably 1 × 10 ^{−6 to} 6 × 10 ⁻⁶ / K.
Specific examples of such substrate materials include inorganic substrate materials made of Pyrex (registered trademark) glass, quartz glass, alumina, beryllia, silicon carbide, aluminum nitride, boron nitride, etc., iron such as 42 alloy, Kovar, and Invar. -The laminated board material etc. which laminated | stacked resin, such as an epoxy resin or a polyimide resin, using the metal plate which consists of nickel alloy steel as a core material are mentioned.

  As shown in FIG. 16, the anisotropic conductive connector 40 includes a disk-shaped frame plate 41 in which a plurality of openings 42 extending through the thickness direction are formed. The opening 42 of the frame plate 41 is formed corresponding to the pattern of the electrode region where the electrodes to be inspected are formed in all the integrated circuits formed on the wafer to be inspected. A plurality of elastic anisotropic conductive films 50 having conductivity in the thickness direction are arranged on the frame plate 41 in a state of being supported by the opening edge portions of the frame plate 41 so as to block the one opening 42. . The frame plate 41 in this example is formed with positioning holes (not shown) for positioning the sheet-like probe 10 and the inspection circuit board 31.

Each of the elastic anisotropic conductive films 50 is made of an elastic polymer material, and is formed around a plurality of connection conductive portions 52 extending in the thickness direction and the connection conductive portions 52. Each of the conductive parts 52 has a functional part 51 including an insulating part 53 that insulates the conductive parts 52 from each other, and the functional part 51 is disposed within the opening 42 of the frame plate 41. The conductive portion 52 for connection in the functional portion 51 is arranged according to a pattern corresponding to the pattern of the electrode to be inspected in the electrode area in the integrated circuit formed on the wafer to be inspected.
A supported portion 55 fixedly supported by the opening edge portion of the frame plate 41 is integrally and continuously formed on the peripheral portion of the functional portion 51. Specifically, the supported portion 55 in this example is formed in a bifurcated shape, and is fixedly supported in close contact so as to grip the opening edge of the frame plate 41.
The conductive part 52 for connection in the functional part 51 of the elastic anisotropic conductive film 50 contains the conductive particles P exhibiting magnetism densely in an aligned state in the thickness direction. On the other hand, the insulating part 53 contains no or almost no conductive particles P.
Further, in the illustrated example, on both surfaces of the functional portion 51 in the elastic anisotropic conductive film 50, protruding portions 54 that protrude from other surfaces are formed at locations where the connecting conductive portion 52 and its peripheral portion are located. ing.

Although the thickness of the frame board 41 changes with the materials, it is preferable that it is 20-600 micrometers, More preferably, it is 40-400 micrometers.
When this thickness is less than 20 μm, the strength required when using the anisotropic conductive connector 40 is not obtained, the durability tends to be low, and the shape of the frame plate 41 is maintained. A degree of rigidity cannot be obtained, and the handleability of the anisotropic conductive connector 40 is low. On the other hand, when the thickness exceeds 600 μm, the elastic anisotropic conductive film 50 formed in the opening 42 is excessively thick, and has good conductivity in the connection conductive portion 52 and adjacent connection. It may be difficult to obtain insulation between the conductive portions 52.
The shape and size in the surface direction of the opening 42 of the frame plate 41 are designed according to the size, pitch, and pattern of the electrodes to be inspected of the wafer to be inspected.

The material constituting the frame plate 41 is not particularly limited as long as the frame plate 41 is not easily deformed and has rigidity enough to maintain its shape stably. For example, a metal material, a ceramic material Various materials such as a resin material can be used. When the frame plate 41 is made of, for example, a metal material, an insulating coating may be formed on the surface of the frame plate 41.
Specific examples of the metal material constituting the frame plate 41 include metals such as iron, copper, nickel, titanium, and aluminum, or alloys or alloy steels in which two or more of these are combined.

Moreover, as a material which comprises the frame board 41, it is preferable to use a thing with a linear thermal expansion coefficient of 3 * 10 < ^-5 > / K or less, More preferably, it is -1 * 10 < ^-7 > -1 * 10 < ^-5 > / K. Particularly preferably, it is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / K.
Specific examples of such materials include Invar type alloys such as Invar, Elinvar type alloys such as Elinvar, magnetic metal alloys such as Super Invar, Kovar, and 42 alloy, or alloy steel.

The total thickness of the elastic anisotropic conductive film 50 (in the illustrated example, the thickness of the connecting conductive portion 52) is preferably 50 to 3000 μm, more preferably 70 to 2500 μm, and particularly preferably 100 to 2000 μm. If this thickness is 50 μm or more, the elastic anisotropic conductive film 50 having sufficient strength can be obtained reliably. On the other hand, if the thickness is 3000 μm or less, the connecting conductive portion 52 having the required conductive characteristics can be obtained with certainty.
The total protrusion height of the protrusions 54 is preferably 10% or more of the thickness of the protrusions 54, and more preferably 20% or more. By forming the projecting portion 54 having such a projecting height, the connecting conductive portion 52 is sufficiently compressed with a small applied pressure, so that good conductivity can be reliably obtained.
Further, the protrusion height of the protrusion 54 is preferably 100% or less of the shortest width or diameter of the protrusion 54, and more preferably 70% or less. By forming the projecting portion 54 having such a projecting height, the projecting portion 54 does not buckle when pressed, and thus the desired conductivity can be reliably obtained.
In addition, the thickness of the supported portion 55 (one thickness of the bifurcated portion in the illustrated example) is preferably 5 to 600 μm, more preferably 10 to 500 μm, and particularly preferably 20 to 400 μm.
Further, the supported portion 55 is not necessarily formed in a bifurcated shape, and may be fixed to only one surface of the frame plate 41.

As the elastic polymer material constituting the elastic anisotropic conductive film 50, a heat-resistant polymer material having a crosslinked structure is preferable. Various materials can be used as the curable polymer substance-forming material that can be used to obtain such a crosslinked polymer substance. Specific examples thereof include silicone rubber, polybutadiene rubber, natural rubber, and polyisoprene. Conjugated diene rubbers such as rubber, styrene-butadiene copolymer rubber, acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, styrene-butadiene-diene block copolymer rubber, styrene-isoprene block copolymer, etc. Block copolymer rubber and hydrogenated products thereof, chloroprene, urethane rubber, polyester rubber, epichlorohydrin rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, soft liquid epoxy rubber, etc. .
Among these, silicone rubber is preferable in terms of moldability and electrical characteristics.

As the silicone rubber, those obtained by crosslinking or condensing liquid silicone rubber are preferable. The liquid silicone rubber preferably has a viscosity of 10 ⁵ poise or less at a strain rate of 10 ⁻¹ sec, and may be any of a condensation type, an addition type, a vinyl group or a hydroxyl group. Good. Specific examples include dimethyl silicone raw rubber, methyl vinyl silicone raw rubber, methyl phenyl vinyl silicone raw rubber, and the like.

Among these, liquid silicone rubber containing vinyl groups (vinyl group-containing polydimethylsiloxane) usually hydrolyzes dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylvinylchlorosilane or dimethylvinylalkoxysilane. And a condensation reaction, for example, followed by fractionation by repeated dissolution-precipitation.
In addition, the liquid silicone rubber containing vinyl groups at both ends is obtained by anionic polymerization of a cyclic siloxane such as octamethylcyclotetrasiloxane in the presence of a catalyst, using, for example, dimethyldivinylsiloxane as a polymerization terminator, and other reaction conditions. It can be obtained by appropriately selecting (for example, the amount of cyclic siloxane and the amount of polymerization terminator). Here, as the catalyst for anionic polymerization, alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or silanolate solution thereof can be used, and the reaction temperature is, for example, 80 to 130 ° C.
Such a vinyl group-containing polydimethylsiloxane preferably has a molecular weight Mw (referred to as a standard polystyrene equivalent weight average molecular weight; the same shall apply hereinafter) having a molecular weight of 10,000 to 40,000. In addition, from the viewpoint of heat resistance of the obtained elastic anisotropic conductive film 50, the molecular weight distribution index (the value of the ratio Mw / Mn between the standard polystyrene equivalent weight average molecular weight Mw and the standard polystyrene equivalent number average molecular weight Mn. The same applies hereinafter. ) Is preferably 2 or less.

On the other hand, a liquid silicone rubber containing hydroxyl groups (hydroxyl group-containing polydimethylsiloxane) usually undergoes hydrolysis and condensation reaction of dimethyldichlorosilane or dimethyldialkoxysilane in the presence of dimethylhydrochlorosilane or dimethylhydroalkoxysilane. For example, and fractionation by repeated dissolution-precipitation.
In addition, cyclic siloxane is anionically polymerized in the presence of a catalyst, and dimethylhydrochlorosilane, methyldihydrochlorosilane, dimethylhydroalkoxysilane or the like is used as a polymerization terminator, and other reaction conditions (for example, the amount of cyclic siloxane and polymerization termination). It can also be obtained by appropriately selecting the amount of the agent. Here, as the catalyst for anionic polymerization, alkali such as tetramethylammonium hydroxide and n-butylphosphonium hydroxide or silanolate solution thereof can be used, and the reaction temperature is, for example, 80 to 130 ° C.

Such a hydroxyl group-containing polydimethylsiloxane preferably has a molecular weight Mw of 10,000 to 40,000. Further, from the viewpoint of heat resistance of the elastic anisotropic conductive film 50 to be obtained, those having a molecular weight distribution index of 2 or less are preferable.
In the present invention, either one of the above-mentioned vinyl group-containing polydimethylsiloxane and hydroxyl group-containing polydimethylsiloxane can be used, or both can be used in combination.

The polymer substance-forming material can contain a curing catalyst for curing the polymer substance-forming material. As such a curing catalyst, an organic peroxide, a fatty acid azo compound, a hydrosilylation catalyst, or the like can be used.
Specific examples of the organic peroxide used as the curing catalyst include benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide and ditertiary butyl peroxide.
Specific examples of the fatty acid azo compound used as the curing catalyst include azobisisobutyronitrile.
Specific examples of what can be used as a catalyst for the hydrosilylation reaction include chloroplatinic acid and salts thereof, platinum-unsaturated siloxane complex, vinylsiloxane and platinum complex, platinum and 1,3-divinyltetramethyldisiloxane. And the like, a complex of triorganophosphine or phosphite and platinum, an acetyl acetate platinum chelate, a complex of cyclic diene and platinum, and the like.
The amount of the curing catalyst used is appropriately selected in consideration of the type of polymer substance-forming material, the type of curing catalyst, and other curing conditions, but usually 3 to 100 parts by weight of the polymer substance-forming material. 15 parts by weight.

In the formation of the elastic anisotropic conductive film 50, the conductive particles P contained in the connection conductive portion 52 in the elastic anisotropic conductive film 50 are included in the molding material for forming the elastic anisotropic conductive film 50. From the viewpoint that the conductive particles P can be easily moved, it is preferable to use those showing magnetism. Specific examples of such conductive particles P exhibiting magnetism include metal particles exhibiting magnetism such as iron, nickel and cobalt, particles of these alloys, particles containing these metals, or cores of these particles. Particles with the surface of the core particles plated with a metal having good conductivity such as gold, silver, palladium, rhodium, or inorganic substance particles such as non-magnetic metal particles or glass beads, or polymer particles are used as core particles. The surface of the core particle is plated with a conductive magnetic material such as nickel or cobalt, or the core particle is coated with both a conductive magnetic material and a metal having good conductivity. It is done.
Among these, it is preferable to use nickel particles as core particles and the surfaces thereof plated with a metal having good conductivity such as gold or silver.
The means for coating the surface of the core particles with the conductive metal is not particularly limited, but can be performed by, for example, electroless plating.

In the case of using the conductive particles P in which the surface of the core particles is coated with a conductive metal, from the viewpoint of obtaining good conductivity, the coverage of the conductive metal on the particle surface (surface area of the core particles). The ratio of the covering area of the conductive metal with respect to is preferably 40% or more, more preferably 45% or more, and particularly preferably 47 to 95%.
The coating amount of the conductive metal is preferably 2.5 to 50% by weight of the core particles, more preferably 3 to 45% by weight, still more preferably 3.5 to 40% by weight, and particularly preferably 5%. ~ 30% by weight.

Moreover, it is preferable that the particle diameter of the electroconductive particle P is 1-500 micrometers, More preferably, it is 2-400 micrometers, More preferably, it is 5-300 micrometers, Most preferably, it is 10-150 micrometers.
Moreover, it is preferable that the particle diameter distribution (Dw / Dn) of the electroconductive particle P is 1-10, More preferably, it is 1-7, More preferably, it is 1-5, Most preferably, it is 1-4.
By using the conductive particles P satisfying such conditions, the obtained elastic anisotropic conductive film 50 can be easily deformed under pressure, and the connecting conductive portion 52 in the elastic anisotropic conductive film 50 can be obtained. In this case, sufficient electrical contact can be obtained between the conductive particles P.
The conductive particles P having such an average particle diameter are prepared by classifying the conductive particles and / or the core particles forming the conductive particles with a classifier such as an air classifier or a sonic sieve. be able to. Specific conditions for the classification treatment are appropriately set according to the average particle size and particle size distribution of the target conductive particles, the type of the classification device, and the like.
Further, the shape of the conductive particles P is not particularly limited, but spherical particles, star-shaped particles, or agglomerated particles 2 can be easily dispersed in the polymer substance-forming material. It is preferable that it is a lump with secondary particles.

  The moisture content of the conductive particles P is preferably 5% or less, more preferably 3% or less, still more preferably 2% or less, and particularly preferably 1% or less. By using the conductive particles P that satisfy such conditions, bubbles are prevented or suppressed from being generated in the molding material layer when the molding material layer is cured.

Moreover, what processed the surface of the electroconductive particle P with coupling agents, such as a silane coupling agent, can be used suitably. By treating the surface of the conductive particles P with a coupling agent, the adhesiveness between the conductive particles P and the elastic polymer substance is increased, and as a result, the obtained elastic anisotropic conductive film 50 is repeatedly formed. Durability in use is high.
The amount of the coupling agent used is appropriately selected within a range that does not affect the conductivity of the conductive particles P, but the coupling agent coverage on the surface of the conductive particles P (the cup relative to the surface area of the conductive core particles). The ratio of the ring agent covering area) is preferably 5% or more, more preferably 7 to 100%, further preferably 10 to 100%, and particularly preferably 20 to 100%. Amount.

  The content ratio of the conductive particles P in the connection conductive portion 52 of the functional portion 51 is preferably 10 to 60%, preferably 15 to 50% in terms of volume fraction. When this ratio is less than 10%, the connection conductive portion 52 having a sufficiently small electric resistance value may not be obtained. On the other hand, when this ratio exceeds 60%, the obtained conductive part 52 for connection tends to be fragile, and the elasticity necessary for the conductive part 52 for connection may not be obtained.

In the polymer substance-forming material, an inorganic filler such as normal silica powder, colloidal silica, airgel silica, alumina, or the like can be contained as necessary. By including such an inorganic filler, the thixotropy of the obtained molding material is ensured, the viscosity thereof is increased, and the dispersion stability of the conductive particles P is improved, and the obtained molding material is cured. The strength of the elastic anisotropic conductive film 50 is increased.
The amount of such inorganic filler used is not particularly limited, but if it is used too much, movement of the conductive particles P due to a magnetic field is greatly hindered in the production method described later, which is not preferable.

  Such an anisotropic conductive connector 40 can be manufactured, for example, by a method described in JP-A-2002-334732.

  In the probe card 30 of the first example, each of the positioning holes (not shown) of the frame plate 41 in the anisotropic conductive connector 40 and the positioning holes (not shown) of the support film 11 in the sheet-like probe 10 are provided. By inserting the guide pin 33 of the inspection circuit board 31, the anisotropic conductive connector 40 is connected to each of the connecting conductive portions 52 in each elastic anisotropic conductive film 50 and the inspection electrode 32 of the inspection circuit board 31. The sheet-like probe 10 is disposed on the surface of the anisotropic conductive connector 40, and each of the electrode structures 17 in the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40 is disposed on the surface of the anisotropic conductive connector 40. It arrange | positions so that each of the electroconductive part 52 for a connection may be contact | connected, and the three are fixed in this state.

According to the probe card 30 of the first example as described above, since the sheet-like probe 10 of the first example described above is included, in the burn-in test, the positional deviation between the electrode structure 17 and the electrode to be inspected due to a temperature change is detected. It can be surely prevented.
Further, each of the openings 42 of the frame plate 41 in the anisotropic conductive connector 40 is formed corresponding to an electrode region in which an electrode to be inspected of an integrated circuit is formed on a wafer to be inspected. The elastic anisotropic conductive film 50 disposed in each may have a small area, and the elastic anisotropic conductive film 50 having a small area has a small absolute amount of thermal expansion in the surface direction. As a result of the thermal expansion in the surface direction being reliably regulated by the frame plate 41, it is possible to reliably prevent the displacement of the connecting conductive portion 52 from the electrode structure 17 and the inspection electrode 32 due to temperature changes.
Therefore, even when the wafer to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes to be inspected is extremely small, it is possible to stably maintain a good electrical connection state to the wafer in the burn-in test. it can.
Further, since the contact film 15 in the sheet-like probe 10 is formed so as to protrude from both surfaces of the support film 11, the wafer disposed on the front surface side of the sheet-like probe 10 and the back surface side of the sheet-like probe 10. As a result of preventing the support film 11 from becoming an obstacle in electrical connection to each of the anisotropically conductive connectors to be arranged, a favorable connection state can be reliably achieved.

FIG. 17 is an explanatory cross-sectional view showing the configuration of the second example of the probe card according to the present invention.
The probe card 30 of the second example is used for performing a probe test of each integrated circuit on a wafer on which a plurality of integrated circuits are formed, for example, in the state of the wafer. And the anisotropic conductive connector 40 provided on one surface of the inspection circuit board 31 and the sheet-like probe 10 of the second example provided on the anisotropic conductive connector 40. .

The inspection circuit board 31 has guide pins 33 for positioning the anisotropic conductive connector 40 and the sheet-like probe 10, and is formed on one surface of the inspection circuit board 31 on the wafer to be inspected. In the integrated circuit, for example, a plurality of inspection electrodes 32 are formed according to a pattern corresponding to the pattern of the electrodes to be inspected in 32 (8 × 4) integrated circuits. Other configurations of the inspection circuit board 31 are the same as those of the inspection circuit board 31 in the probe card 30 of the first example.
As shown in FIG. 18, the anisotropic conductive connector 40 includes a rectangular plate-like frame plate 41 in which a plurality of openings 42 extending through the thickness direction are formed. The opening 42 of the frame plate 41 corresponds to a pattern of an electrode region in which electrodes to be inspected in, for example, 32 (8 × 4) integrated circuits formed on a wafer to be inspected. Is formed. A plurality of elastic anisotropic conductive films 50 having conductivity in the thickness direction are arranged on the frame plate 41 in a state of being supported by the opening edge portions of the frame plate 41 so as to block the one opening 42. . Other configurations of the anisotropic conductive connector 40 are the same as those of the anisotropic conductive connector 40 in the probe card 30 of the first example (see FIG. 15).
In the probe card 30 of the second example, the anisotropic conductive connector 40 is connected to the surface of the inspection circuit board 31 and each of the connection conductive portions 52 of the elastic anisotropic conductive film 50 is connected to the inspection circuit board. The guide pins 33 of the test circuit board 31 are inserted into the positioning holes (not shown) of the support film 11 in the sheet-like probe 10. Thus, the sheet-like probe 10 is arranged so that each of the electrode structures 17 is in contact with each of the connecting conductive portions 52 in the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40. The person is fixed.

According to the probe card 30 of the second example as described above, since the sheet-like probe 10 of the second example described above is included, in the probe test, the positional deviation between the electrode structure 17 and the electrode to be inspected due to a temperature change is detected. It can be surely prevented.
Further, each of the openings 42 of the frame plate 41 in the anisotropic conductive connector 40 is formed corresponding to an electrode region in which an electrode to be inspected of an integrated circuit is formed on a wafer to be inspected. The elastic anisotropic conductive film 50 disposed in each may have a small area, and the elastic anisotropic conductive film 50 having a small area has a small absolute amount of thermal expansion in the surface direction. As a result of the thermal expansion in the surface direction being reliably regulated by the frame plate 41, it is possible to reliably prevent the displacement of the connecting conductive portion 52 from the electrode structure 17 and the inspection electrode 32 due to temperature changes.
Therefore, even when the wafer to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes to be inspected is extremely small, it is possible to stably maintain a good electrical connection state to the wafer in the probe test. it can.
Further, since the contact film 15 in the sheet-like probe 10 is formed so as to protrude from both surfaces of the support film 11, the wafer disposed on the front surface side of the sheet-like probe 10 and the back surface side of the sheet-like probe 10. As a result of preventing the support film 11 from becoming an obstacle in electrical connection to each of the anisotropically conductive connectors to be arranged, a favorable connection state can be reliably achieved.

[Wafer inspection equipment]
FIG. 19 is a cross-sectional view for explaining the outline of the configuration of the first example of the wafer inspection apparatus according to the present invention. This wafer inspection apparatus is configured to integrate each of a plurality of integrated circuits formed on the wafer. This is for performing the burn-in test of the circuit in a batch on the wafer.
The wafer inspection apparatus of the first example includes the probe card 30 of the first example in order to make electrical connection between each of the electrodes 2 to be inspected of the wafer 1 to be inspected and a tester. A pressure plate 35 for pressing the probe card 30 downward is provided on the back surface of the inspection circuit board 31 in the probe card 30, and a wafer on which the wafer 1 to be inspected is placed below the probe card 30. A mounting table 36 is provided, and a heater 37 is connected to each of the pressure plate 35 and the wafer mounting table 36.

  In such a wafer inspection apparatus, the wafer 1 to be inspected is placed on the wafer placement table 36, and then the probe card 30 is pressed downward by the pressure plate 35, whereby the sheet-like probe 10 is obtained. Each of the surface electrode portions 18a in the electrode structure 17 is in contact with each of the electrodes 2 to be inspected of the wafer 1, and each of the electrodes 2 to be inspected of the wafer 1 is pressurized by each of the surface electrode portions 18a. Is done. In this state, each of the connecting conductive portions 52 in the elastic anisotropic conductive film 50 of the anisotropic conductive connector 40 is connected to the surface of the inspection electrode 32 of the inspection circuit board 31 and the electrode structure 17 of the sheet-like probe 10. The conductive portion 52 is sandwiched between the electrode portions 18a and compressed in the thickness direction, whereby a conductive path is formed in the connecting conductive portion 52 in the thickness direction. Electrical connection between the circuit board 31 and the inspection electrode 32 is achieved. Thereafter, the wafer 1 is heated to a predetermined temperature by the heater 37 via the wafer mounting table 36 and the pressure plate 35, and in this state, a required electrical inspection is performed on each of the plurality of integrated circuits on the wafer 1. Is done.

  According to the wafer inspection apparatus of the first example as described above, the electrical connection of the wafer 1 to be inspected to the inspection target electrode 2 is achieved via the probe card 30 of the first example. However, even if the electrode 2 to be inspected has a large area with a diameter of 8 inches or more and the pitch of the electrodes 2 to be inspected is extremely small, a good electrical connection state to the wafer 1 can be stably maintained in the burn-in test. The required electrical inspection can be performed reliably for each of the plurality of integrated circuits.

FIG. 20 is a cross-sectional view for explaining the outline of the configuration of the second example of the wafer inspection apparatus according to the present invention. This wafer inspection apparatus is configured to integrate each of a plurality of integrated circuits formed on the wafer. This is for performing a probe test of a circuit in a wafer state.
The wafer inspection apparatus of the second example has the same configuration as the wafer inspection apparatus of the first example except that the probe card 30 of the second example is used instead of the probe card 30 of the first example. is there.
In the wafer inspection apparatus of the second example, the probe card 30 is electrically connected to the inspection target electrodes of, for example, 32 integrated circuits selected from all the integrated circuits formed on the wafer, and the inspection is performed. After that, by repeating the process of electrically connecting the probe card 30 to the electrodes to be inspected of the plurality of integrated circuits selected from other integrated circuits and performing the inspection, all the elements formed on the wafer are An integrated circuit probe test is performed.
According to the wafer inspection apparatus of the second example as described above, since the electrical connection of the wafer 1 to be inspected to the inspection target electrode 2 is achieved via the probe card 30 of the second example, the wafer 1 However, even if the electrode 2 to be inspected has a large area of 8 inches or more in diameter and the pitch of the electrodes 2 to be inspected is extremely small, a good electrical connection to the wafer 1 can be stably maintained in the probe test. The required electrical inspection can be performed reliably for each of the plurality of integrated circuits.

The present invention is not limited to the above embodiment, and various modifications can be made as follows.
(1) The use of the sheet-like probe and the probe card is not limited to the wafer inspection apparatus, but can be applied to an inspection apparatus for circuit devices such as package ICs such as BGA and CSP and MCM, and such probes. An inspection device for a circuit device including a card can be configured.
(2) In the sheet-like probe 10, as shown in FIG. 21, a ring-shaped holding member 14 may be provided on the periphery of the support film 11.
Examples of the material constituting the holding member 14 include Invar type alloys such as Invar and Super Invar, Elinvar type alloys such as Elinvar, low thermal expansion metal materials such as Kovar and 42 alloy, or alumina, silicon carbide, silicon nitride, and the like. The ceramic material can be used.
(3) The elastic anisotropic conductive film 50 in the anisotropic conductive connector 40 is not electrically connected to the electrode to be inspected in addition to the connection conductive portion 52 formed according to the pattern corresponding to the pattern of the electrode to be inspected. A conductive portion for non-connection may be formed.

It is a top view which shows the 1st example of the sheet-like probe which concerns on this invention. It is a top view which expands and shows the contact film of the sheet-like probe of the 1st example. It is sectional drawing for description which expands and shows the structure of the contact film of the sheet-like probe of a 1st example. It is a top view which shows the support film in the sheet-like probe of a 1st example. It is sectional drawing for description which shows each member used in order to manufacture the sheet-like probe of this invention. It is sectional drawing for description which shows the state by which the space for insulating film shaping | molding was formed on the metal foil for back surface electrode parts by the back surface side spacer, the support film, and the surface side spacer. It is sectional drawing for description which shows the state by which the insulating film material layer was formed in the insulating film shaping | molding space. It is sectional drawing for description which shows the state by which the insulating film was formed in the support film. It is sectional drawing for description which shows the state by which the through-hole was formed in the insulating film. It is sectional drawing for description which shows the state by which the short circuit part and the surface electrode part were formed in the insulating film. It is sectional drawing for description which shows the state in which the back surface electrode part was formed. It is a top view which shows the 2nd example of the sheet-like probe which concerns on this invention. It is a top view which shows the support film in the sheet-like probe of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the probe card based on this invention. It is sectional drawing for description which expands and shows the structure of the principal part of the probe card of a 1st example. It is a top view which shows the anisotropically conductive connector in the probe card of a 1st example. It is sectional drawing for description which shows the structure of the 2nd example of the probe card based on this invention. It is a top view which shows the anisotropically conductive connector in the probe card of a 2nd example. It is sectional drawing for description which shows the structure of the 1st example of the wafer inspection apparatus which concerns on this invention. It is sectional drawing for description which shows the structure of the 2nd example of the wafer inspection apparatus which concerns on this invention. It is a top view which shows the other example of the sheet-like probe which concerns on this invention. It is sectional drawing for description which shows the structure of the conventional sheet-like probe.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer 2 Electrode to be inspected 10 Sheet-like probe 11 Support film 12 Opening 13 Positioning hole 14 Holding member 15 Contact film 16 Insulating film 16A Insulating film material layer 16S Insulating film forming space 17 Electrode structure 17H Through-hole 18a Surface electrode part 18b Back electrode part 18c Short-circuit part 20 Back electrode part metal foil 21 Back side spacer 21K Opening 22 Front side spacer 22K Opening 30 Probe card 31 Inspection circuit board 32 Inspection electrode 33 Guide pin 35 Pressure plate 36 Wafer mounting table 37 Heating 40 Anisotropic conductive connector 41 Frame plate 42 Opening 50 Elastic anisotropic conductive film 51 Functional part 52 Connecting conductive part 53 Insulating part 54 Projecting part 55 Supported part 90 Sheet probe 91 Insulating sheet 92 Holding member 95 Electrode structure Body 96 Front electrode part 97 Back electrode part 98 Short-circuit part P Conductive particle

Claims (12)

A support film made of a metal having a plurality of openings formed therein and a plurality of contact films arranged and supported by the support film so as to close the openings, each of which is made of a flexible resin. The insulating film and the surface electrode portion exposed on the surface of the insulating film and the back electrode portion exposed on the back surface, which are arranged and held in accordance with a pattern corresponding to the electrode to be connected to the insulating film, are in the thickness direction of the insulating film. A method of manufacturing a sheet-like probe comprising a plurality of electrode structures connected by a short-circuit portion extending to
On the metal foil for the back electrode part, an insulating film material layer made of a liquid resin material having a shape corresponding to the shape of the insulating film to be formed is formed on the supporting film so as to block each opening of the supporting film. Each of the insulating film material layers is cured to form a plurality of insulating films supported by the support film, and through holes are formed in the insulating film according to a pattern corresponding to the pattern of the electrode structure to be formed. And forming a short-circuit portion connected to the metal foil for the back electrode portion in the through hole of the insulating film by plating the back-surface electrode portion metal foil. A sheet electrode probe formed by forming a surface electrode portion connected to the short circuit portion by etching the metal foil for the back surface electrode portion. Method.   The method for manufacturing a sheet-like probe according to claim 1, wherein the insulating film is made of an etchable resin, and through holes are formed in the insulating film by an etching process.   The method for manufacturing a sheet-like probe according to claim 1, wherein the insulating film is made of polyimide.   By arranging a spacer in which a plurality of openings having a shape conforming to the planar shape of the insulating film to be formed are arranged on one or both of the one surface and the other surface of the support film, the support film opening and the spacer opening The sheet-like probe according to any one of claims 1 to 3, wherein a space for forming an insulating film partitioned by the step is formed, and a material layer for the insulating film is formed in the space for forming an insulating film. Manufacturing method. ^{5. The} method for producing a sheet-like probe according to claim 1, wherein the linear thermal expansion coefficient of the support film is 3 × 10 ⁻⁵ / K or less.   A sheet-like probe manufactured by the method according to any one of claims 1 to 5.   A support film made of a metal having a plurality of openings formed thereon, and a plurality of contact films that are supported by the support film so as to protrude from both sides of the support film and to be arranged so as to close one opening of the support film; Each of the contact films includes an insulating film made of a flexible resin, and a surface electrode portion and a back surface that are arranged and held in accordance with a pattern corresponding to the electrode to be connected to the insulating film and exposed on the surface of the insulating film. A sheet-like probe comprising: a plurality of electrode structures in which back electrode portions exposed to each other are connected by a short-circuit portion extending in a thickness direction of the insulating film.   A probe card comprising the sheet-like probe according to claim 6. For each of a plurality of integrated circuits formed on a wafer, a probe card used for performing an electrical inspection of the integrated circuit in a wafer state,
An inspection circuit board having inspection electrodes formed on the surface according to a pattern corresponding to the pattern of the inspected electrode of the integrated circuit on the wafer to be inspected, and an anisotropic conductive connector disposed on the surface of the inspection circuit board And a sheet-like probe according to claim 6, which is disposed on the anisotropic conductive connector.   A circuit device inspection apparatus comprising the probe card according to claim 8. A wafer inspection apparatus that performs electrical inspection of a plurality of integrated circuits formed on a wafer in a wafer state,
A wafer inspection apparatus comprising the probe card according to claim 9. Each of the plurality of integrated circuits formed on the wafer is electrically connected to a tester via the probe card according to claim 9, and an electrical inspection of the integrated circuit formed on the wafer is performed. Wafer inspection method.

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